CN103022016A

CN103022016A - Multi-way electrostatic discharge protection device

Info

Publication number: CN103022016A
Application number: CN2012105900464A
Authority: CN
Inventors: 黄冕
Original assignee: SHENZHEN ZHONGKE SYSTEM INTEGRATION TECHNOLOGY Co Ltd
Current assignee: Songchen semiconductor technology (Shenzhen) Co.,Ltd.
Priority date: 2012-12-31
Filing date: 2012-12-31
Publication date: 2013-04-03
Anticipated expiration: 2032-12-31
Also published as: CN103022016B

Abstract

An embodiment of the invention discloses a multi-way ESD (electrostatic discharge) protection device which comprises a lower body and a protection upper body. The lower body comprises a first base material and a first resin layer, N holes filled with conductive materials are arranged on the first base material, and each of N conductive areas of a first conductive layer is communicated with different conductive areas of N conductive areas of a second conductive layer through the conductive materials in different through holes of the N holes. The lower body is provided with N/2 holes which penetrate from the first resin layer to a first insulating layer and filled with slurry, the N conductive areas of the first conductive layer include N/2 second type of conductive areas and N/2 first type of conductive areas, and each first type of conductive areas in the N/2 first type of conductive areas is connected with different conductive areas in the N/2 second type of conductive areas through the slurry in different holes of the N/2 holes. By means of the scheme, manufacturing cost of the ESD protection device can be lowered, and safety of the ESD protection device can be improved.

Description

Multichannel electrostatic discharge protection device

Technical field

The present invention relates to electronic device processing and manufacturing technical field, be specifically related to a kind of multichannel electrostatic discharge protection device.

Background technology

Along with the development of integrated circuit technology, transistor size has tapered to sub-micron even deep-submicron stage.Reducing of device physics size greatly improved the integrated level of circuit, but the integrity problem of highly integrated device is also following.ESD(electro-static discharge, static discharges) be exactly to cause one of main reason that electronic equipment and components and parts lost efficacy.This mainly be because, along with dwindling of components and parts size, for example gradually attenuation of the thickness of grid oxide layer of field effect element, although this variation can significantly improve the operating efficiency of circuit, but but may make circuit become more fragile, thereby when being subject to electrostatic impact, circuit is easy to lose efficacy.

In order to solve the electronic equipment that causes owing to ESD and the integrity problem of components and parts, consider in the industry in integrated circuit, to introduce the esd protection device (also can be referred to as electrostatic impedor) with superior performance, higher tolerance.The esd protection device generally is configured between the signal line and earth terminal of circuit, and under the circuit normal operating conditions, esd protection device two ends are separated by the dielectric layer of centre, present high-impedance state, and signal can not flow into earth terminal by the esd protection device.When circuit is subject to ESD and affects; when for example the static on the application on human skin is applied on the circuit; a very large magnitude of voltage may appear in the circuit; the generation of large voltage is so that large electrical potential difference appears in esd protection device two ends; this moment, the esd protection device was breakdown; change conducting state into by high-impedance state, so just static is imported to earth terminal, and then avoided operating circuit because the excessive damage that causes of voltage.The electrical potential difference at esd protection device two ends disappeared thereupon after static was derived, and the esd protection device is got back to again high-impedance state.

Current, the application of high speed transmission of signals is more and more, and larger distorted signals, the loss impact that high speed transmission of signals is caused of the parasitic capacitance of esd protection device self is also just larger.Esd protection device of the prior art is to utilize the reverse breakdown principle of PN junction to reach the purpose of electrostatic protection; what it adopted is semiconductor fabrication process; therefore; this type of esd protection device often will just can reach extra small parasitic capacitance appearance value and leakage current current value (for example, realizing less than the parasitic capacitance appearance value of 0.2pf with less than the leakage current flow valuve of 100nA) with higher manufacturing cost.In addition, when excessive by the electric current of this type of esd protection device, may cause the ESD device to burst and form the open circuit phenomenon.

Summary of the invention

The embodiment of the invention provides a kind of multichannel esd protection device, in the hope of the cost of manufacture that reduces the esd protection device, the fail safe that improves the esd protection device.

The invention provides a kind of multichannel electrostatic discharge protection device, can comprise:

Lower body and protection upper body,

Wherein, described lower body comprises:

The first base material and the first resin bed, wherein, described the first base material comprises the first conductive layer, the second conductive layer and the first insulating barrier between described the first conductive layer and described the second conductive layer, described the first resin bed is arranged on described the first conductive layer, be processed with N hole on described the first base material, described N is filled with conductive materials in the hole, described the second conductive layer comprises mutually N conductive region of not conducting, described the first conductive layer comprises mutually N conductive region of not conducting, wherein, each conductive region in the N of described the first conductive layer conductive region, respectively by the interior conductive materials of the different through holes in the described N hole, from the different conductive region conductings in N the conductive region of described the second conductive layer; Wherein, described lower body also has N/2 the hole that is through to described the first insulating barrier from described the first resin bed, described N/2 is filled with slurry in the hole, the N of described the first a conductive layer conductive region comprises N/2 Equations of The Second Kind conductive region and N/2 first kind conductive region, each first kind conductive region in described N/2 first kind conductive region, respectively by the slurry in the different holes in the described N/2 hole, join from the different conductive regions in described N/2 the Equations of The Second Kind conductive region, wherein, described slurry contains conducting particles and non-conductive particle, and described N is the even number greater than 2;

Described protection upper body is arranged on described the first resin bed.

Optionally, also has the groove that is through to described the first insulating barrier from described the first conductive layer on described the first base material.

Optionally, the width of described groove is less than or equal to 50 microns.

Optionally, described the first base material is copper clad laminate CCL.

Optionally, a described N/2 hole falls into described groove among the projection of the plate face direction of described the first base material in the part or all of projection of the plate face direction of described the first base material.

Optionally, described protection upper body comprises: the second base material and be arranged at adhesive layer on described the second base material;

Described protection upper body bonds on described the first resin bed by described adhesive layer.

Optionally, described the second base material comprises the second insulating barrier and the 3rd conductive layer, and wherein, described adhesive layer is arranged on described the 3rd conductive layer; Wherein, a described N/2 hole is in the part or all of projection of the plate face direction of described the first base material, fall into the conductive region of described the 3rd conductive layer among the projection of the plate face direction of described the first base material, perhaps a described N/2 hole overlaps in the projection of the plate face direction of described the first base material with the conductive region of described the 3rd conductive layer in the projection of the plate face direction of described the first base material.

Optionally, described protection upper body comprises: the second base material and be arranged at the second resin bed on described the second base material and be arranged at adhesive layer on described the second resin bed; Described protection upper body bonds on described the first resin bed by described adhesive layer.

Optionally, described the second base material comprises: the second insulating barrier and the 3rd conductive layer, and wherein, described the second resin bed is arranged on described the 3rd conductive layer; Wherein, a described N/2 hole is in the part or all of projection of the plate face direction of described the first base material, fall into the conductive region of described the 3rd conductive layer among the projection of the plate face direction of described the first base material, perhaps, a described N/2 hole overlaps in the projection of the plate face direction of described the first base material with the conductive region of described the 3rd conductive layer in the projection of the plate face direction of described the first base material.

Optionally, described the first resin bed is epoxylite layer or phenolic resinoid layer.

Optionally, described the second resin bed is epoxylite layer or phenolic resinoid layer.

Therefore; multichannel esd protection device in the embodiment of the invention; can adopt the high base plate for packaging processing technology of maturity or printed wire board machining process processing esd protection device, but not semiconducter process, be conducive to reduce difficulty of processing and the manufacturing cost of esd protection device.Next is to introduce the slurry that contains conducting particles and non-conductive particle in the esd protection device; for example; the N of the first a conductive layer conductive region comprises N/2 Equations of The Second Kind conductive region and N/2 first kind conductive region; each first kind conductive region in N/2 first kind conductive region; respectively by the slurry within the different blind holes in N/2 the blind hole come from above-mentioned N/2 Equations of The Second Kind conductive region in different Equations of The Second Kind conductive regions join; so; under normal working voltage; slurry within the hole keeps high-impedance state; slurry becomes low resistive state to realize electrostatic protection when voltage surpasses trigger voltage; and slurry is filled in the hole; possess extremely low parasitic capacitance and leakage current; the electric capacity that is conducive to the esd protection device that reduces to process; leakage current (for example; the esd protection device that embodiment of the invention scheme processes in addition can realize less than the parasitic capacitance appearance value of 0.2pf with less than the leakage current flow valuve of 100nA), this is to reducing for example distorted signals and the loss of high frequency/high speed circuit; reduce circuit power consumption; improving the operating efficiency of circuit and the fail safe of esd protection device work has great importance.And the embodiment of the invention is introduced resin material in the esd protection device; be conducive to further reduce manufacture difficulty and the manufacturing cost of esd protection device; and; delicate structure, the reliability of multichannel esd protection device are higher, and then are conducive to promote the market competitiveness of the esd protection device that embodiment of the invention scheme processes.Further, the embodiment of the invention has realized multichannel esd protection device fabrication, is conducive to so further improve working (machining) efficiency, reduces manufacturing cost, and each road of the esd protection device that processes shared grounding end not, is conducive to improve reliability.

Description of drawings

In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, the below will do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art, apparently, accompanying drawing in the following describes only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.

Fig. 1 is the schematic flow sheet that the embodiment of the invention provides a kind of processing method of multichannel electrostatic discharge protection device;

The machining sketch chart of the multichannel electrostatic discharge protection device that Fig. 2 ~ Figure 27 provides for the embodiment of the invention.

Embodiment

The embodiment of the invention provides a kind of processing method of electrostatic discharge protection device, in the hope of the cost of manufacture that reduces the esd protection device, the fail safe that improves the esd protection device.

Below in conjunction with the accompanying drawing in the embodiment of the invention, the technical scheme in the embodiment of the invention is clearly and completely described, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that obtains under the creative work prerequisite.

Term " first " in specification of the present invention and claims and the above-mentioned accompanying drawing, " second ", " the 3rd " " 4th " etc. (if exist) are be used to distinguishing similar object, and needn't be used for describing specific order or precedence.The data that should be appreciated that such use suitably can exchanged in the situation, so as embodiments of the invention described herein for example can with except diagram here or describe those order enforcement.In addition, term " comprises " and " having " and their any distortion, intention is to cover not exclusive comprising, for example, comprised those steps or unit that process, method, system, product or the equipment of series of steps or unit are not necessarily limited to clearly list, but can comprise clearly do not list or for these processes, method, product or equipment intrinsic other step or unit.

For ease of better understanding static, the below simply is introduced static.

Static is a kind of natural phenomena of objective reality, and the mode of generation is multiple, such as contact, friction, appliance chamber induction etc.The characteristics of static be gather for a long time, high voltage, low electric weight, little electric current and action time short characteristics.Human body self action or with the contacting of other objects, separate, the factors such as friction or induction can produce the static of several kilovolts even volts up to ten thousand.Static is at a plurality of fields harm.Triboelectrification and static electricity on human body are that two in the electronics industry endangers greatly, usually cause the electric equipment products fluctuation of service, even damage.The major measure of electrostatic defending is static leakage, dissipation, neutralization, humidification in the production process, shielding ﹠ grounding.Static electricity on human body's guard system mainly contains the compositions such as ESD-preventive wrist strap, ankle band, heel band, work clothes, footgear, cap, gloves or fingerstall, has electrostatic leakage, the functions such as neutralization and shielding.Electrostatic defending work is a long-term system engineering, and the error of any link or careless omission all will cause the failure of electrostatic defending work.

Static can be described as ubiquitous in daily life, on our body and on every side just with very high electrostatic potential, and several kilovolts even several ten thousand volts.May know from experience at ordinary times less than the pass by carpet static of chemical fibre of, people approximately is 35000 volts, about 7000 volts of the plastics specification of browsing, and for some responsive instruments, this voltage may be fatal harm.Electrostatics is mainly studied the static application technology, such as electrostatic precipitation, xerography, electrostatic field etc.Main is the electrostatic defending technology, electrostatic hazard such as electronics industry, petroleum industry, weapon industry, textile industry, rubber industry and space flight and military field, seek to reduce loss that static causes in recent years along with the develop rapidly of science and technology, extensive use and the electromagnetic environment of microelectric technique become increasingly complex, the Electromagnetic Environmental Effect of static discharge such as electromagnetic interference and emc issue have become a problem in the urgent need to address.On the one hand, the high speed of the extensive use of the macromolecular material that some resistivity are very high such as the goods of plastics or rubber etc. and modern production process, so that electrostatic energy runs up to very high degree, on the other hand, the production of electrostatic sensitive material and use, such as light-end products, gunpowder, solid electronic device etc., department of industrial and mining enterprises is subjected to the harm of static also more and more outstanding, and electrostatic hazard has caused quite serious consequence and loss.It can inadvertently with the electronic device puncture of costliness, cause the loss of electronics industry year to reach the over ten billion dollar.

ESD is exactly the quick neutralization of electric charge, and the expense of the annual flower of electronics industry on this has more than the multi-million dollar.All materials have electronics and proton all by atomic building in the atom.When material obtains or loses electronics, it will lose electric equilibrium and become electronegative or positive electricity, and positive charge or negative electrical charge will make static on the object band in the material surface accumulation.Charge accumulated produces because material contacts with each other to separate usually, also can be caused by friction, is called triboelectrification.There are many factors can affect the accumulation of electric charge, comprise contact, coefficient of friction and separating rate etc.Electrostatic charge constantly accumulation until cause that the effect of charge generation stops, electric charge is released or reach enough intensity can puncture ambient substance.After dielectric was breakdown, electrostatic charge can be balanced very soon, and the quick neutralization of this electric charge just is called static discharge.Because quick discharge voltage on very little resistance, vent discharge fails to be convened for lack of a quorum very large, may surpass 20 amperes, if this discharge is undertaken by integrated circuit or other Electrostatic Discharge Sensitives, so large electric current will cause serious harm to the circuit that is designed to conducting microampere only or milliampere level electric current.

Wherein, can have multiple model to can be used to explain device and how to suffer damage, such as manikin, machine mould, Charged Device Model and electric field on impact of device etc.Wherein, for example for automatic assembly equipment, mainly consider rear three kinds of damage models.For example, machine mould/pattern, automatic assembly equipment comes moving device with guide rail, driving-belt, slideway, element conveyer and other devices, make it the direction motion by technological requirement, if device design is improper, may accumulate a large amount of electric charges on driving-belt and the delivery system, these electric charges will be released by device in technical process.Equipment unit just is called machine mould/pattern by the device discharge.Charged Device Model/pattern, if device has been accumulated electric charge because of certain reason and contacted with a charged few surface, electric charge will be released by the current-carrying part on the device.When device discharges to other materials, just be called the electrification device pattern, represent with Charged Device Model.Electric field influence, electric field induction can produce potential difference between the resistive circuit of IC, cause the insulator dielectric breakdown.The Another reason that causes inefficacy is that the electric charge on the device can be polarized in electric field, thereby produces potential difference and anisotropy charge discharge, forms dual discharge or neutralization.Can use the material with different resistance characteristics in ESD control, these materials are used in the automatic assembly equipment can obtain desirable effect.

And special esd protection device in the E-consumer class, digital product.Operation principle is in the electrical equipment course of normal operation, and the esd protection device just shows as low capacitance (being generally less than 5pf) capacitive reactance characteristic, can not exert an influence to the normal opering characteristic of electric apparatus, and can not have influence on signal and the transfer of data of electronic product; When the overvoltage at device two ends reaches predetermined breakdown voltage, (may reach nanosecond) rapidly and make a response, pass through with leakage current between the amount amplifying stage of geometric progression, thereby reach absorption, weaken static to interference and the impact of circuit characteristic.Simultaneously, because the particularity of the formation material of esd protection device, the esd protection device often all is by static being absorbed and dissipate, that is shows as a process that discharges and recharges and reach equipment is carried out electrostatic defending.

Embodiment of the processing method of multichannel electrostatic discharge protection device of the present invention, wherein, a kind of processing method of multichannel electrostatic discharge protection device, can comprise: process N through hole at the first base material, wherein above-mentioned N is greater than 2 even number, and the first base material comprises the first conductive layer, the second conductive layer and the first insulating barrier between the first conductive layer and the second conductive layer; By electroplating and/or chemical plating filled conductive material in an above-mentioned N through hole; Carry out figure processing at the second conductive layer, the second conductive layer is divided into mutually N conductive region of not conducting; Carry out figure processing and/or process the blind slot that is through to the first insulating barrier at the first conductive layer at the first conductive layer, the first conductive layer is divided into mutually N conductive region of not conducting, wherein, each conductive region in the N of the first conductive layer conductive region, respectively by the interior conductive materials of the different through holes in the above-mentioned N through hole, from the different conductive region conductings in N the conductive region of the second conductive layer; At the first conductive layer the first resin bed is set; At the first resin bed protective layer is set; Process N/2 the blind hole that is through to the first insulating barrier at above-mentioned protective layer; Filling paste within an above-mentioned N/2 blind hole, wherein, the N of the first a conductive layer conductive region comprises N/2 Equations of The Second Kind conductive region and N/2 first kind conductive region, each first kind conductive region in above-mentioned N/2 first kind conductive region, join from different Equations of The Second Kind conductive regions in above-mentioned N/2 the Equations of The Second Kind conductive region by the slurry in the different blind holes in the above-mentioned N/2 blind hole respectively, wherein, above-mentioned slurry contains conducting particles and non-conductive particle; Above-mentioned protective layer is peeled off from the first resin bed; At the first resin bed the protection upper body is set.

See also Fig. 1, the schematic flow sheet of the processing method of a kind of electrostatic discharge protection device that Fig. 1 provides for the embodiment of the invention.As shown in Figure 1, the processing method of a kind of electrostatic discharge protection device of providing of the embodiment of the invention can comprise following content:

101, process N through hole at the first base material, wherein, above-mentioned N comprises the first conductive layer, the second conductive layer and the first insulating barrier between the first conductive layer and the second conductive layer greater than 2, the first base materials.

In some embodiments of the invention, for example can by machine drilling or laser drill mode (or other processing mode), process N through hole at the first base material.

Be understandable that, but the N value 2,4,6,8 in the embodiment of the invention, 10 or other larger value.

Wherein, the first base material can be the substrate of copper clad laminate (CCL, copper clad laminate) or other type.Wherein, the first insulating barrier for example can be epoxylite layer or the resin bed of phenolic resinoid layer or other type of resin material or the insulation material layer of other type.

102, by electroplating and/or chemical plating filled conductive material in an above-mentioned N through hole.

In some embodiments of the invention, by electroplate and/or chemical plating in an above-mentioned N through hole in the filled conductive material, may thicken the conductive materials of the first conductive layer and the second conductive layer, if need not to thicken the conductive materials of the first conductive layer and/or the second conductive layer, before above-mentioned step by plating and/or chemical plating filled conductive material in an above-mentioned N through hole, can on the first conductive layer and/or the second conductive layer, paste anti-plated film in other zone, and expose an above-mentioned N through hole.

Be appreciated that by electroplating and/or chemical plating filled conductive material in N through hole, interconnected to form interlayer, be conducive to like this formation precision interconnected between good key-course, improve a lot aspect the precision than prior art.

103, carry out figure processing at the second conductive layer, the second conductive layer is divided into mutually N conductive region of not conducting.

In some embodiments of the invention, for example can carry out figure processing at the second conductive layer by chemical etching or laser ablation (or other possible processing mode), the second conductive layer is divided into mutually N conductive region of not conducting.Wherein, the area of this N conductive region of the second conductive layer may equate or part equates, but or the area of each conductive region in this N conductive region of the second conductive layer also each is unequal.

104, carry out figure processing and/or process the blind slot that is through to the first insulating barrier at the first conductive layer at the first conductive layer, the first conductive layer is divided into mutually N conductive region of not conducting, each conductive region in above-mentioned N the conductive region of the first conductive layer wherein, respectively by the interior conductive materials of the different through holes in the above-mentioned N through hole, from the different conductive region conductings in above-mentioned N the conductive region of the second conductive layer.

Wherein, the conductive region t11 in above-mentioned N the conductive region of the first conductive layer for example, can be by the conductive materials in the through hole k1 in the above-mentioned N through hole, with the conductive region t21 conducting in above-mentioned N the conductive region of the second conductive layer, wherein, conductive region t11 is any one conductive region in above-mentioned N the conductive region of the first conductive layer, through hole k1 is any one through hole in the above-mentioned N through hole, and conductive region t21 is any one conductive region in above-mentioned N the conductive region of the second conductive layer.And in some embodiments of the invention, conductive region t11 yet can be by conductive materials and the conductive region t21 conducting in the through hole k2, wherein, through hole k2 is different from any one through hole in the above-mentioned N through hole, that is to say, conductive region t11 can be by conductive materials and the conductive region t21 conducting in one or more through holes (such as through hole k1 and through hole k2), to improve reliability.Be understandable that, conductive region t11 in above-mentioned N the conductive region of the first conductive layer only with above-mentioned N conductive region of the second conductive layer in conductive region t21 conducting, and not can with above-mentioned N conductive region of the second conductive layer in other any one conductive region conducting.Certainly, each through hole of the conductive region of the conductive region of conducting the first conductive layer and the second conductive layer is non-intersect.

In some embodiments of the invention, if by carry out figure processing at the first conductive layer, the first conductive layer is divided into mutually N conductive region of not conducting, then for example can be by chemical etching or laser ablation (perhaps other possible processing mode), carry out figure processing at the first conductive layer, the first conductive layer is divided into mutually N conductive region of not conducting.Wherein, the area of this N conductive region of the first conductive layer may equate or part equates, but or the area of each conductive region in this N conductive region of the first conductive layer also each is unequal.

In other embodiment of the present invention, if by process the blind slot that is through to the first insulating barrier at the first conductive layer, the first conductive layer is divided into mutually N conductive region of not conducting, then for example can be by mechanical groove milling or laser groove milling mode (or other processing mode), process the blind slot that is through to the first insulating barrier at the first conductive layer, the first conductive layer is divided into mutually N conductive region of not conducting, wherein the area of this N conductive region of the first conductive layer may equate or part equates, but or the area of each conductive region in this N conductive region of the first conductive layer also each is unequal.Wherein, the width of above-mentioned blind slot can be less than 50 microns or wider or narrower.Wherein, the surface that for example may extend into the first insulating barrier in the above-mentioned blind slot or the inside of the first insulating barrier.

In some embodiments of the invention, also can carry out figure processing at the first conductive layer, and process the blind slot that is through to the first insulating barrier at the first conductive layer, the first conductive layer is divided into mutually N conductive region of not conducting, that is, cooperate the first conductive layer to be divided into mutually N conductive region of not conducting by figure processing and blind slot processing.Wherein, the surface that for example may extend into the first insulating barrier in the above-mentioned blind slot or the inside of the first insulating barrier.

105, at the first conductive layer the first resin bed is set.

In some embodiments of the invention, can at the first conductive layer the first resin bed be set by modes such as pressing, printing or coatings.If be appreciated that at the first conductive layer to have processed the blind slot that is through to the first insulating barrier, then the part resin of the first resin bed can be filled among the above-mentioned blind slot that is through to the first insulating barrier that processes.

In some embodiments of the invention, the first resin bed for example can be the resin bed of epoxylite layer or phenolic resinoid layer or other type of resin material.

106, at the first resin bed protective layer is set.

In some embodiments of the invention, can at the first resin bed protective layer be set by modes such as pressing, printing or coatings.Wherein, above-mentioned protective layer for example can be, the protective material of epoxylite layer or acrylic resin layer or other type.In actual applications, selected protective layer material for example has preferably peelable characteristic, so that follow-up this protective layer conveniently can being peeled off from the second insulating barrier.

107, process N/2 the blind hole that is through to the first insulating barrier at above-mentioned protective layer.

In some embodiments of the invention, for example can by machine drilling or laser drill mode (perhaps other possible processing mode), process N/2 the blind hole that is through to above-mentioned the first insulating barrier at above-mentioned protective layer.Wherein, the part or all of blind hole in the above-mentioned N/2 blind hole for example may extend into the surface of the first insulating barrier, and perhaps, the part or all of blind hole in the above-mentioned N/2 blind hole for example may extend into the inside of the first insulating barrier.

108, filling paste in an above-mentioned N/2 blind hole, wherein, the N of the first a conductive layer conductive region comprises Equations of The Second Kind conductive region (conductive region that namely is used for ground connection) and N/2 first kind conductive region, each first kind conductive region in above-mentioned N/2 first kind conductive region, join by the slurry in the different blind holes in the above-mentioned N/2 blind hole and above-mentioned Equations of The Second Kind conductive region respectively, wherein, above-mentioned slurry contains conducting particles and non-conductive particle.

Wherein, for example, first kind conductive region t11 in above-mentioned N/2 the first kind conductive region of the first conductive layer, can be by the slurry in the blind hole mk1 in the above-mentioned N/2 blind hole, with the Equations of The Second Kind conductive region t12 conducting in above-mentioned N/2 the Equations of The Second Kind conductive region of the first conductive layer, wherein, above-mentioned first kind conductive region t11 can be any one first kind conductive region in above-mentioned N/2 the first kind conductive region of the first conductive layer, blind hole mk1 is any one blind hole in the above-mentioned N/2 blind hole, and Equations of The Second Kind conductive region t12 can be any one conductive region in N/2 the Equations of The Second Kind conductive region.And in some embodiments of the invention, first kind conductive region t11 yet can join by the above-mentioned Equations of The Second Kind conductive region t12 conducting of the slurry in the blind hole mk2 and the first conductive layer, and wherein blind hole mk2 is different from any one blind hole in the above-mentioned N/2 blind hole.That is to say that first kind conductive region t11 can join by slurry and the Equations of The Second Kind conductive region t12 in one or more blind holes (such as blind hole mk1 and blind hole mk2), to improve reliability.Be appreciated that any two first kind conductive regions in above-mentioned N/2 the first kind conductive region of the first conductive layer, do not join by the slurry in the blind hole.

Wherein, can comprise silicones and/or epoxylite etc. in the slurry, slurry also can comprise other non-conductive particle certainly.Under normal working voltage, the slurry in the hole keeps high-impedance state, and slurry becomes low resistive state to realize electrostatic protection when voltage surpasses trigger voltage; namely; the resistance value of slurry may be different under different voltage, and when magnitude of voltage was crossed trigger voltage, the slurry resistance-variable was little.Slurry is filled in the hole; possess extremely low parasitic capacitance and leakage current; the electric capacity and the leakage current that are conducive to the esd protection device that reduces to process, this to the distorted signals and the loss that reduce high frequency/high speed circuit for example, reduce circuit power consumption, the operating efficiency that improves circuit and the fail safe of esd protection device work and have great importance.

In actual applications, can select as required dissimilar slurries, to satisfy different trigger voltage protection needs.Wherein, slurry contains conducting particles and non-conductive particle, and wherein, non-conductive particle for example can comprise: silicones, epoxy resin or other Available Material.Conducting particles is such as being (such as conductive various metal oxides etc.) such as the metal dust (such as copper powder, silver powder or other metallic conductor) of micron order (or greater or lesser) or oxides.The additive etc. that certainly, also can comprise conducting particles and/or non-conductive particle in the slurry.

Following silicones is done simple the introduction, and silicones typically refers to the resin that a class by the silica structure cell formation is subjected to heat solidifiable and forms tridimensional network.Silicones is to have highly cross-linked cancellated polysiloxane, has the double grading of organic resin and inorganic material concurrently.Normally use the various mixtures of methyl trichlorosilane, dimethyldichlorosilane, phenyl trichlorosilane, diphenyl dichlorosilane or dichloromethyl phenylsilane, in the presence of organic solvent such as toluene, add at a lower temperature water decomposition, obtain the acidic hydrolysis thing.The initial product of hydrolysis is ring-type, line style and mixture cross-linked polymer, usually also contains considerable hydroxyl.Except disacidify, neutral first condensation polymer is thermal oxidation or further polycondensation in the presence of catalyst in air, the last crosslinked dimensional network structure of height of formation through washing for hydrolysate.Silicones is a kind of heat cured plastics, and one of performance that it is the most outstanding is excellent thermo oxidative stability.250 ℃ of heating are after 24 hours, and silicones weightlessness only is 2～8%.Another outstanding performance of silicones is excellent electrical insulation capability, and it all can keep its good insulation property in wide temperature and frequency range.

The classification silicones of silicones is take silicon-oxygen-silicon as main chain, and the silicon atom first line of a couplet is connected to half inorganic polymer of the cross-linking type of organic group.It is along with direct method production organic silicon monomer silicones has outstanding weatherability, is that any organic resin is too far behind to catch up, even under ultraviolet acute irradiation, silicones is anti-yellowing also.The silicone resin adhesive organic silicon adhesive can be divided into adhesive and the adhesive take silicon rubber as base-material take silicones as base-material by raw material sources, wherein, the former is mainly used in Bonding Metal and heat-resisting silicones is good to the metal bonding performance of iron, aluminium and tin and so on, and glass and pottery are also gluedd joint easily.

Wherein, the silicones type comprises following kind: methyl phenyl silicone resin, methyl silicon resin, low phenyl methyl silicones, the organic siliconresin emulsion, the self-drying type organic siliconresin, the high temperature modification organic siliconresin, epoxy modified silicone resin, organosilicon polyester modified resin, self-drying type environmental protection organic siliconresin, environment-protecting silicone resin, the non-viscous paint organic siliconresin, high light organic siliconresin, the benzyl transparent silicon resin, methyl transparent organic silicon resin, the bonding silicones of mica, poly-methyl silicon resin, amino silicone, fluorine silicon resin, silicon resin solution, the organosilicon-epoxide resin, organic silicon polyester resin, the solvent-resisting organic siliconresin, organic silicon resin adhesive, the fluorine silicon resin Silicone Sealants, the high-temperature resisting methyl silicones, the self-drying type organic silicon insulating varnish, methyl MQ silicones, the vinyl MQ silicones, organosilicon acrylic resin coating etc.

109, above-mentioned protective layer is peeled off from the first resin bed.

110, at the first resin bed the protection upper body is set.

Wherein, can will protect the upper body to be arranged on the first resin bed by multiple possible mode.Slurry in one of the purpose that the first resin bed arranges the protection upper body is protection the first resin bed, the first conductive layer and N/2 blind hole etc.The structure that is appreciated that the protection upper body can be diversified.

In some embodiments of the invention, above-mentioned protection upper body comprises: the second base material and be arranged at adhesive layer on the second base material.Wherein, at the first resin bed the protection upper body being set comprises: by above-mentioned adhesive layer above-mentioned protection upper body is bonded on the first resin bed.Under this scene, for example, the second base material can comprise the second insulating barrier and the 3rd conductive layer (wherein, the 3rd conductive layer for example can be the conductive layer of copper layer or other material), and wherein, above-mentioned adhesive layer is arranged on the 3rd conductive layer.Perhaps, the second base material can comprise the second insulating barrier, the 3rd conductive layer and the 4th conductive layer (wherein the 3rd conductive layer and the 4th conductive layer for example can be the conductive layer of copper layer or other material), wherein, the second insulating barrier is between the 3rd conductive layer and the 4th conductive layer, wherein, above-mentioned adhesive layer is arranged on the 3rd conductive layer.Wherein, an above-mentioned N/2 blind hole is in the part or all of projection of the plate face direction of the first base material, can fall into the conductive region of the 3rd conductive layer among the projection of the plate face direction of the first base material, perhaps, an above-mentioned N/2 blind hole can overlap in the projection of the plate face direction of the first base material with the conductive region of the 3rd conductive layer in the projection of the plate face direction of the first base material.For example the 3rd conductive layer can comprise a plurality of conductive regions (for example comprising N/2 conductive region), and the area of each conductive region all can be greater than or equal to the cross-sectional area of a blind hole.If the second base material comprises the 3rd conductive layer (wherein because the 3rd conductive layer has certain mechanical strength usually); then in the time will protecting the upper body to press on the first resin bed; the 3rd conductive layer can play certain protective effect to the slurry in the above-mentioned N/2 blind hole; if the second insulating barrier has enough mechanical strengths certainly, then the 3rd conductive layer also can omit.

In other embodiment of the present invention, above-mentioned protection upper body can comprise the second base material and be arranged at the second resin bed on the second base material and be arranged at adhesive layer on the second resin bed.Wherein, at the first resin bed the protection upper body being set for example can comprise: by above-mentioned adhesive layer above-mentioned protection upper body is bonded on the first resin bed.Under this scene, for example, the second base material can comprise: the second insulating barrier and the 3rd conductive layer are (wherein, the 3rd conductive layer for example can be the conductive layer of copper layer or other material), wherein, the second resin bed is arranged on the 3rd conductive layer, perhaps, the second base material can comprise the second insulating barrier, the 3rd conductive layer and the 4th conductive layer are (wherein, the 3rd conductive layer and the 4th conductive layer for example can be the conductive layer of copper layer or other material), wherein, the second insulating barrier is between the 3rd conductive layer and the 4th conductive layer, wherein, the second resin bed is arranged on the 3rd conductive layer.Wherein, an above-mentioned N/2 blind hole can fall into the conductive region of the 3rd conductive layer among the projection of the plate face direction of the first base material in the part or all of projection of the plate face direction of the first base material; Perhaps, an above-mentioned N/2 blind hole can overlap in the projection of the plate face direction of the first base material with the conductive region of the 3rd conductive layer in the projection of the plate face direction of the first base material.For example, the 3rd conductive layer can comprise a plurality of conductive regions (for example can comprise N/2 conductive region), and the area of each conductive region all can be greater than or equal to the cross-sectional area of a blind hole.If the second base material comprises the 3rd conductive layer (the 3rd conductive layer has certain mechanical strength usually); then in the time will protecting the upper body to press on the first resin bed; the 3rd conductive layer can play certain protective effect to the slurry in the above-mentioned N/2 blind hole; certainly; if the second insulating barrier has enough mechanical strengths, then the 3rd conductive layer also can omit.

In some embodiments of the invention, the first resin bed for example can be the resin bed of epoxylite layer or phenolic resinoid layer or other type of resin material.The second insulating barrier for example can be epoxylite layer or the resin bed of phenolic resinoid layer or other type of resin material or the insulation material layer of other type.Wherein, the second base material for example can be the substrate of CCL or other type.

For ease of better understanding and implement the such scheme of the embodiment of the invention, carry out application scenarios for example below in conjunction with accompanying drawing.

Please in the lump referring to Fig. 2 ~ Figure 27, wherein, the machining sketch chart of a kind of esd protection device that Fig. 2 ~ Figure 27 provides for the embodiment of the invention.

Fig. 2 shows a kind of for example structure of the first base material 200.Wherein, the first base material 200 comprises the first conductive layer 201, the first insulating barrier 202 and the second conductive layer 203, and wherein, the first insulating barrier 202 is between the first conductive layer 201 and the second conductive layer 203.

Fig. 3 is illustrated in and has got out N through hole 204 on the first base material 200.Mainly equal 6 as example take N in the accompanying drawing, certainly in actual applications, N can be for greater than 2 any positive 2 even number.

Fig. 4 is the elevational schematic view that has got out N through hole 204 the first base material 200 afterwards.

Fig. 5 shows by chemical plating and/or electroplates filled conductive material 205 in N through hole 204.

The second conductive layer 203 that Fig. 6 shows at the first base material 200 carries out figure processing, the first conductive layer 201 has been divided into mutually N conductive region of not conducting.

The first conductive layer 201 that Fig. 7 shows at the first base material 200 carries out figure processing.

The first conductive layer 201 that Fig. 8 shows at the first base material 200 processes the blind slot 206 that is through to the first insulating barrier 202, the first conductive layer 201 is divided into mutually N conductive region of not conducting.Each conductive region in above-mentioned N the conductive region of the first conductive layer 201 wherein is respectively by the interior conductive materials 205 of the different through holes in the above-mentioned N through hole 204, from the different conductive region conductings in above-mentioned N the conductive region of the second conductive layer 203.

Fig. 9 is through a kind of tangent plane schematic diagram after Fig. 6 ~ processing shown in Figure 9, wherein, Fig. 9 illustrates the inside that blind slot 206 is through to the first insulating barrier 202, certainly, under other application scenarios, blind slot 206 also can only be through to the surface of the first insulating barrier 202 and not extend to the inside of the first insulating barrier 202.

Figure 10 is illustrated in the first resin bed 207 is set on the first conductive layer 201, and the first resin bed 207 shown in Figure 10 is filled blind slot 206.

Figure 11 is illustrated on the first resin bed 207 protective layer 208 is set.

Figure 12 is illustrated in and processes N/2 the blind hole 209 that is through to the first insulating barrier 202 on the protective layer 208.Wherein, the N/2 that processes shown in a Figure 12 blind hole 209 falls into blind slot 206 among the projection of the plate face direction of the first base material in the part or all of projection of the plate face direction of the first base material.

Figure 13 is illustrated in N/2 blind hole 209 interior filling pastes 210.Wherein, each first kind conductive region in N/2 first kind conductive region joins with above-mentioned Equations of The Second Kind conductive region by the slurry 210 in the different blind holes in the above-mentioned N/2 blind hole 209 respectively.

Figure 14 is illustrated in protective layer 208 is peeled off from the first resin bed 207, and wherein, Figure 14 illustrates part slurry 210 and also has been stripped from, and so far, the lower body of esd protection device machines.

Figure 15 is a kind of schematic top plan view of structure shown in Figure 14.

Figure 16 ~ Figure 22 shows the processing mode of two kinds of protection upper bodies of the esd protection device of having given an example out.

Wherein, a kind of for example structure of second substrate shown in Figure 16 300.Wherein, the second base material 300 comprises the 4th conductive layer 301, the second insulating barrier 302 and the 3rd conductive layer 303, and wherein, the second insulating barrier 302 is between the 4th conductive layer 301 and the 3rd conductive layer 303.

Figure 17 is illustrated in and carries out figure processing on the 3rd conductive layer 303 of second substrate 300.

Figure 18 is illustrated in the elevational schematic view of carrying out on the 3rd conductive layer 303 after figure is processed, and wherein the 3rd conductive layer 303 is split into mutually N/2 conductive region of not conducting.

Figure 19 is illustrated in the second resin bed 304 is set on the 3rd conductive layer 303.

Figure 20 is illustrated on the second resin bed 304 adhesive layer 305 is set.

Figure 21 is illustrated on the adhesive layer 305 and mills out the blind slot that (for example, can by laser groove milling mode or mechanical groove milling mode) be through to the 3rd conductive layer 303, to expose the part or all of conductive region of the 3rd conductive layer 303.So far, a kind of protection upper body of esd protection device machines.Figure 16 ~ Figure 21 shows and processes the protection upper body that comprises the second resin bed 304.

Figure 16 ~ Figure 18, and Figure 22 illustrates and processes the protection upper body that does not comprise the second resin bed 304.

Figure 22 shows on the basis of structure shown in Figure 180, further at the 3rd conductive layer 303 adhesive layer 305 is set, and so far, the another kind of esd protection device protection upper body machines.Wherein, the 4th conductive layer 301 and the 3rd conductive layer 303 in the protection shown in Figure 22 upper body all can omit; namely the second base material 300 can be the second insulating barrier 302, and can obtain a kind of protection upper body of esd protection device after the second insulating barrier 302 arranges adhesive layer 305.

Figure 23 illustrates protection shown in Figure 21 upper body, bonds on the lower body of esd protection device shown in Figure 15, obtains a kind of esd protection device of structure.Figure 24 is the schematic diagram of the esd protection device after the basis of structure shown in Figure 23 dispenses the 4th conductive layer 301.Wherein, the blind hole of above-mentioned N/2 shown in Figure 23 209 is in the projection of the plate face direction of the first base material 200, fall into the conductive region of the 3rd conductive layer 303 among the projection of the plate face direction of the first base material 200, namely the area of each conductive region in the N/2 of the 3rd conductive layer conductive region all can be greater than or equal to the cross-sectional area of a corresponding blind hole 209.Because the 3rd conductive layer 303 has certain mechanical strength usually; then in the time will protecting the upper body to press on the first resin bed 207; the 3rd conductive layer 303 can play certain protective effect to the slurry 210 in the above-mentioned N/2 blind hole 209; certainly; if the second insulation; 302 have enough mechanical strengths, and then the 3rd conductive layer 303 also can omit.Wherein, has space (this space can be airtight or unsealed space) between slurry shown in Figure 23 210 and the 3rd conductive layer 303.

Figure 25 illustrates protection shown in Figure 22 upper body, bonds on the lower body of esd protection device shown in Figure 15, obtains the esd protection device of another kind of structure.Figure 26 is the esd protection device schematic diagram after the 4th conductive layer 301 is omitted on the basis of structure shown in Figure 25.Wherein, the blind hole of above-mentioned N/2 shown in Figure 24 209 is in the projection of the plate face direction of the first base material 200, fall into the conductive region of the 3rd conductive layer 303 among the projection of the plate face direction of the first base material 200, namely the area of each conductive region in the N/2 of the 3rd conductive layer conductive region all can be greater than or equal to the cross-sectional area of a corresponding blind hole 209.Because the 3rd conductive layer 303 has certain mechanical strength usually; then in the time will protecting the upper body to press on the first resin bed 207; the 3rd conductive layer 303 can play certain protective effect to the slurry 210 in the above-mentioned N/2 blind hole 209; certainly; if the second insulation 302 has enough mechanical strengths, then the 3rd conductive layer 303 also can omit.Figure 27 is the schematic diagram of the esd protection device after the 3rd conductive layer 302 is omitted on the basis of structure shown in Figure 26.

Be understandable that the structure of the protection upper body of esd protection device is not limited to give an example among the figure.

Be appreciated that Fig. 2 ~ esd protection device fabrication mode shown in Figure 27 only is for example, also can do in actual applications the adjustment of flexible suitability.

The embodiment of the invention also provides a kind of processing method of multichannel electrostatic discharge protection device, can comprise:

Process N blind hole at the first base material, wherein, above-mentioned N is greater than 2 even number, and the first base material comprises the first conductive layer, the second conductive layer and the first insulating barrier between the first conductive layer and the second conductive layer;

By electroplating and/or chemical plating filled conductive material in an above-mentioned N blind hole;

Carry out figure processing at the second conductive layer, the second conductive layer is divided into mutually N conductive region of not conducting;

Carry out figure processing and/or process the blind slot that is through to the first insulating barrier at the first conductive layer at the first conductive layer, the first conductive layer is divided into mutually N conductive region of not conducting, wherein, each conductive region in the N of the first conductive layer conductive region, respectively by the conductive materials in the different blind holes in the above-mentioned N blind hole, from the different conductive region conductings in N the conductive region of the second conductive layer;

At the first conductive layer the first resin bed is set;

At the first resin bed protective layer is set;

Process N/2 the blind hole that is through to the first insulating barrier at above-mentioned protective layer;

Filling paste in an above-mentioned N/2 blind hole, wherein, the N of the first a conductive layer conductive region comprises N/2 Equations of The Second Kind conductive region and N/2 first kind conductive region, each first kind conductive region in above-mentioned N/2 first kind conductive region, join from different Equations of The Second Kind conductive regions in the above-mentioned N/2 Equations of The Second Kind conductive region by the slurry in the different blind holes in the above-mentioned N/2 blind hole respectively, wherein, above-mentioned slurry contains conducting particles and non-conductive particle;

Above-mentioned protective layer is peeled off from the first resin bed;

At the first resin bed the protection upper body is set.

In each embodiment of the present invention, first kind conductive region can be received different signal ends with the Equations of The Second Kind conductive region, for example, but a wherein class conductive region ground connection of first kind conductive region and Equations of The Second Kind conductive region.

Optionally, above-mentionedly process N blind hole at the first base material, comprising: process N blind hole by machine drilling or laser drill mode at the first base material.

Optionally, above-mentionedly process N blind hole at the first base material, can comprise: window at the first conductive layer of the first base material and process to expose N blind hole machining area; Process N the blind hole that is through to the second conductive layer at above-mentioned N blind hole machining area by machine drilling or laser drill mode; Perhaps, window processing to expose N blind hole machining area at the second conductive layer of the first base material; Process N the blind hole that is through to the first conductive layer at above-mentioned N blind hole machining area by machine drilling or laser drill mode; Perhaps, process N the blind hole that is through to the second conductive layer by the machine drilling mode at the first conductive layer of the first base material; Perhaps, process N the blind hole that is through to the first conductive layer by the machine drilling mode at the second conductive layer of the first base material.

Therefore; the esd protection device fabrication scheme that provides in the embodiment of the invention; the main high base plate for packaging processing technology of maturity or the printed wire board machining process processing esd protection device of adopting; but not semiconducter process is conducive to reduce difficulty of processing and the manufacturing cost of esd protection device.Next is to introduce the slurry that contains conducting particles and non-conductive particle in the esd protection device; for example; the N of the first a conductive layer conductive region comprises N/2 Equations of The Second Kind conductive region and N/2 first kind conductive region; each first kind conductive region in N/2 first kind conductive region; respectively by the slurry within the different blind holes in N/2 the blind hole come from above-mentioned N/2 Equations of The Second Kind conductive region in different Equations of The Second Kind conductive regions join; so then under normal working voltage; slurry within the hole keeps high-impedance state; slurry becomes low resistive state to realize electrostatic protection when voltage surpasses trigger voltage; and slurry is filled in the hole; possess extremely low parasitic capacitance and leakage current; the electric capacity that is conducive to the esd protection device that reduces to process; leakage current (for example; the esd protection device that embodiment of the invention scheme processes in addition can realize less than the parasitic capacitance appearance value of 0.2pf with less than the leakage current flow valuve of 100nA), this is to reducing for example distorted signals and the loss of high frequency/high speed circuit; reduce circuit power consumption; improving the operating efficiency of circuit and the fail safe of esd protection device work has great importance.And the embodiment of the invention is introduced resin material in the esd protection device, is conducive to further reduce manufacture difficulty and the manufacturing cost of high esd protection device, and then is conducive to promote the market competitiveness of the esd protection device that embodiment of the invention scheme processes.Further, the embodiment of the invention realizes multichannel esd protection device (comprising N/2 protection branch road) processing, and each road shared grounding end of the esd protection device that processes, is conducive to so further improve working (machining) efficiency, reduces manufacturing cost.

The embodiment of the invention also provides multichannel esd protection device.The for example structure of multichannel esd protection device can be shown in any width of cloth of Figure 23 ~ Figure 27.

Wherein, multichannel esd protection device can comprise:

Lower body (structure of lower body can as shown in figure 14) and protection upper body,

Wherein, lower body comprises: the first base material and the first resin bed 207, wherein, the first base material comprises the first conductive layer 201, the second conductive layer 203 and the first insulating barrier 202 between the first conductive layer 201 and the second conductive layer 203, the first resin bed 207 is arranged on the first conductive layer 201, be processed with N hole on the first base material, above-mentioned N is filled with conductive materials 205 in the hole, the second conductive layer 203 comprises mutually N conductive region of not conducting, the first conductive layer 201 comprises mutually N conductive region of not conducting, each conductive region in the N of the first conductive layer 201 conductive region wherein, respectively by the interior conductive materials 205 of the different through holes in the above-mentioned N hole, from the different conductive region conductings in N the conductive region of the second conductive layer 203; Wherein, above-mentioned lower body also has N/2 the hole that is through to the first insulating barrier 202 from the first resin bed 207, above-mentioned N/2 is filled with slurry 210 in the hole, the N of the first conductive layer 201 conductive region comprises N/2 Equations of The Second Kind conductive region and N/2 first kind conductive region, each first kind conductive region in above-mentioned N/2 first kind conductive region, respectively by the slurry 210 in the different holes in the above-mentioned N/2 hole, join from the different conductive regions in above-mentioned N/2 the Equations of The Second Kind conductive region, wherein, above-mentioned slurry contains conducting particles and non-conductive particle.

N is the even number greater than 2.

Above-mentioned protection upper body is arranged on the first resin bed 207.

In some embodiments of the invention, also has the groove that is through to the first insulating barrier 202 from the first conductive layer 201 on the first base material.Concrete structure can be such as Fig. 8 and groove 206 shown in Figure 9.

In some embodiments of the invention, the width of above-mentioned groove can be less than or equal to 50 microns, certainly also can be wider or narrower.

In some embodiments of the invention, the first base material can be the substrate of copper clad laminate CCL or other type.

In some embodiments of the invention, an above-mentioned N/2 hole falls into above-mentioned groove among the projection of the plate face direction of the first base material in the part or all of projection of the plate face direction of the first base material.

In some embodiments of the invention, above-mentioned protection upper body comprises: the second base material and the adhesive layer (concrete structure can be as shown in figure 22, and wherein, the 3rd conductive layer 303 and/or the 4th conductive layer 301 of the second base material can omit) that is arranged on the second base material.Shown in Figure 25 ~ 27, above-mentioned protection upper body can bond on the first resin bed 207 by above-mentioned adhesive layer 305.

For example, the second base material comprises the second insulating barrier and the 3rd conductive layer, and wherein above-mentioned adhesive layer is arranged on the 3rd conductive layer; Wherein, an above-mentioned N/2 hole is in the part or all of projection of the plate face direction of the first base material, fall into the conductive region of the 3rd conductive layer among the projection of the plate face direction of the first base material, perhaps, an above-mentioned N/2 hole overlaps in the projection of the plate face direction of the first base material with the conductive region of the 3rd conductive layer in the projection of the plate face direction of the first base material.

In other embodiment of the present invention, above-mentioned protection upper body comprises: the second base material and be arranged at the second resin bed 304 on the second base material and be arranged at adhesive layer 305 on the second resin bed 304; Above-mentioned protection upper body bonds on the first resin bed 207 by above-mentioned adhesive layer 305.

For example, the second base material comprises: the second insulating barrier 302 and the 3rd conductive layer 303, and wherein, the second resin bed 302 is arranged on the 3rd conductive layer 303; Wherein, an above-mentioned N/2 hole is in the part or all of projection of the plate face direction of the first base material, fall into the conductive region of the 3rd conductive layer 303 among the projection of the plate face direction of the first base material, perhaps, an above-mentioned N/2 hole overlaps in the projection of the plate face direction of the first base material with the conductive region of the 3rd conductive layer in the projection of the plate face direction of the first base material.Wherein, has space (wherein, this space can be airtight or unsealed space) between slurry shown in Figure 23 210 and the 3rd conductive layer 303.

Optionally, the first resin bed and/or the second resin bed for example can be epoxylite layer or phenolic resinoid layer or other available resin bed.

Available understanding, Figure 23 ~ for example multichannel esd protection device of structure shown in Figure 27 can obtain with processing based on the processing mode of said method embodiment, certainly also can obtain by similar other processing mode processing.For Figure 23 ~ for example situation of other viewing angle of the multichannel esd protection device of structure shown in Figure 27, can referring to the associated description of Fig. 2 ~ Figure 22 and above-described embodiment, repeat no more herein.

Need to prove, for aforesaid each embodiment of the method, for simple description, so it all is expressed as a series of combination of actions, but those skilled in the art should know, the present invention is not subjected to the restriction of described sequence of movement, because according to the present invention, some step can adopt other orders or carry out simultaneously.Secondly, those skilled in the art also should know, the embodiment described in the specification all belongs to preferred embodiment, and related action and module might not be that the present invention is necessary.In the above-described embodiments, the description of each embodiment is all emphasized particularly on different fields, do not have the part that describes in detail among certain embodiment, can be referring to the associated description of other embodiment.

More than the processing method of multichannel electrostatic discharge protection device that the embodiment of the invention is provided be described in detail, used specific case herein principle of the present invention and execution mode are set forth, the explanation of above embodiment just is used for helping to understand method of the present invention and core concept thereof; Simultaneously, for one of ordinary skill in the art, according to thought of the present invention, all will change in specific embodiments and applications, to sum up, this description should not be construed as limitation of the present invention.

Claims

1. a multichannel static discharges the esd protection device, it is characterized in that, comprising:

Lower body and protection upper body,

Wherein, described lower body comprises:

Described protection upper body is arranged on described the first resin bed.

2. multichannel static according to claim 1 discharges the esd protection device, it is characterized in that also having the groove that is through to described the first insulating barrier from described the first conductive layer on described the first base material.

3. multichannel static according to claim 2 discharges the esd protection device, it is characterized in that,

The width of described groove is less than or equal to 50 microns.

4. multichannel static according to claim 1 discharges the esd protection device, it is characterized in that,

Described the first base material is copper clad laminate CCL.

5. according to claim 1 to 4 each described multichannel static release esd protection devices; it is characterized in that; a described N/2 hole falls into described groove among the projection of the plate face direction of described the first base material in the part or all of projection of the plate face direction of described the first base material.

6. multichannel static according to claim 5 discharges the esd protection device, it is characterized in that,

Described protection upper body comprises: the second base material and the adhesive layer that is arranged on described the second base material;

7. the 6 multichannel static of stating discharge the esd protection device as requested, it is characterized in that described the second base material comprises the second insulating barrier and the 3rd conductive layer, and wherein, described adhesive layer is arranged on described the 3rd conductive layer; Wherein, a described N/2 hole is in the part or all of projection of the plate face direction of described the first base material, fall into the conductive region of described the 3rd conductive layer among the projection of the plate face direction of described the first base material, perhaps a described N/2 hole overlaps in the projection of the plate face direction of described the first base material with the conductive region of described the 3rd conductive layer in the projection of the plate face direction of described the first base material.

8. multichannel static according to claim 5 discharges the esd protection device, it is characterized in that,

Described protection upper body comprises: the second base material and be arranged at the second resin bed on described the second base material and be arranged at adhesive layer on described the second resin bed; Described protection upper body bonds on described the first resin bed by described adhesive layer.

9. the 8 multichannel static of stating discharge the esd protection device as requested, it is characterized in that,

Described the second base material comprises: the second insulating barrier and the 3rd conductive layer, and wherein, described the second resin bed is arranged on described the 3rd conductive layer; Wherein, a described N/2 hole is in the part or all of projection of the plate face direction of described the first base material, fall into the conductive region of described the 3rd conductive layer among the projection of the plate face direction of described the first base material, perhaps, a described N/2 hole overlaps in the projection of the plate face direction of described the first base material with the conductive region of described the 3rd conductive layer in the projection of the plate face direction of described the first base material.

10. 9 described multichannel static discharge the esd protection device as requested, it is characterized in that described the first resin bed and/or described the second resin bed are epoxylite layer or phenolic resinoid layer.