CN103346147A - Multi-channel electrostatic discharge protective device - Google Patents
Multi-channel electrostatic discharge protective device Download PDFInfo
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- CN103346147A CN103346147A CN2013102955667A CN201310295566A CN103346147A CN 103346147 A CN103346147 A CN 103346147A CN 2013102955667 A CN2013102955667 A CN 2013102955667A CN 201310295566 A CN201310295566 A CN 201310295566A CN 103346147 A CN103346147 A CN 103346147A
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Abstract
An embodiment of the invention discloses a multi-channel electrostatic discharge protective device. The multi-channel electrostatic discharge protective device comprises a lower body and a protective upper body. The lower body comprises a first substrate and a first resin layer. N holes which are filled with conductive substances are machined in the first substrate. Each of the N conductive areas of a first conductive layer is communicated with one different conductive area of N conductive areas of a second conductive layer through the conductive substances filled in the different through holes of the N holes. The lower body is further provided with N/2 holes which penetrate from the first resin layer to a first insulating layer and are filled with slurry. The N conductive areas of the first conductive layer comprise N/2 second kind of conductive areas and N/2 first kind of conductive areas. Each of the N/2 first kind of conductive areas is connected with one different conductive area of the N/2 second kind of conductive areas through the slurry filled in the different holes of the N/2 holes. The multi-channel electrostatic discharge protective device is beneficial to reducing the manufacturing cost of the ESD protective device and improving the safety of the ESD protective device.
Description
The application be that December 30, application number in 2012 are 201210585611.8 the applying date, denomination of invention divides an application for the case of " processing method of multichannel electrostatic discharge protection device ".
Technical field
The present invention relates to electronic device processing and manufacturing technical field, be specifically related to a kind of multichannel electrostatic discharge protection device.
Background technology
Along with the continuous development of integrated circuit technology, transistor size has tapered to sub-micron even deep-submicron stage.Reducing of device physics size improved the integrated level of circuit greatly, but the integrity problem of highly integrated device is also following.ESD(electro-static discharge, static discharges) be exactly to cause one of main reason that electronic equipment and components and parts lost efficacy.This mainly be because, along with dwindling of components and parts size, the for example thickness of grid oxide layer of field effect element attenuation gradually, though this variation can significantly improve the operating efficiency of circuit, but but may make circuit become more fragile, thereby when being subjected to electrostatic impact, circuit is easy to lose efficacy.
In order to solve the electronic equipment that causes owing to ESD and the integrity problem of components and parts, consider in integrated circuit, to introduce the esd protection device (also can be referred to as the static impedance device) with superior performance, higher tolerance in the industry.The esd protection device generally is configured between the signal line and earth terminal of circuit, and under the circuit normal operating conditions, esd protection device two ends are separated by the dielectric layer of centre, present high-impedance state, and signal can not flow into earth terminal by the esd protection device.When circuit is subjected to ESD and influences; when for example the static on the application on human skin is applied on the circuit; a very big magnitude of voltage may appear in the circuit; the generation of big voltage makes esd protection device two ends big electrical potential difference occur; this moment, the esd protection device was breakdown; change conducting state into by high-impedance state, so just static is imported to earth terminal, and then avoided operating circuit because the excessive damage that causes of voltage.The electrical potential difference that static is derived esd protection device two ends, back disappears thereupon, and the esd protection device is got back to high-impedance state again.
Current, the application of high speed transmission of signals is more and more, and more big distorted signals, the loss influence that high speed transmission of signals is caused of the parasitic capacitance of esd protection device self is also just more big.Esd protection device of the prior art is to utilize the reverse breakdown principle of PN junction to reach the purpose of electrostatic protection; what it adopted is semiconductor fabrication process; therefore; this type of esd protection device often will just can reach extra small parasitic capacitance appearance value and leakage current current value (for example, realizing less than the parasitic capacitance appearance value of 0.2pf with less than the leakage current flow valuve of 100nA) with higher manufacturing cost.In addition, when excessive by the electric current of this type of esd protection device, may cause the ESD device to burst and form the open circuit phenomenon.
Summary of the invention
The embodiment of the invention provides a kind of multichannel esd protection device, in the hope of the cost of manufacture that reduces the esd protection device, the fail safe that improves the esd protection device.
The invention provides a kind of multichannel electrostatic discharge protection device, can comprise:
Lower body and protection upper body,
Wherein, described lower body comprises:
First base material and first resin bed, wherein, described first base material comprises first conductive layer, second conductive layer and first insulating barrier between described first conductive layer and described second conductive layer, described first resin bed is arranged on described first conductive layer, be processed with N hole on described first base material, described N is filled with conductive materials in the hole, described second conductive layer comprises N conductive region of not conducting mutually, described first conductive layer comprises N conductive region of not conducting mutually, wherein, each conductive region in the N of described first conductive layer conductive region, respectively by the interior conductive materials of the different through holes in the described N hole, with the different conductive region conductings in N the conductive region of described second conductive layer; Wherein, described lower body also has N/2 the hole that is through to described first insulating barrier from described first resin bed, described N/2 is filled with slurry in the hole, the N of described first conductive layer conductive region comprises N/2 the second class conductive region and N/2 first kind conductive region, each first kind conductive region in described N/2 first kind conductive region, respectively by the slurry in the different holes in the described N/2 hole, join with the different conductive regions in described N/2 the second class conductive region, wherein, described slurry contains conducting particles and non-conductive particle, and described N is the even number greater than 2;
Described protection upper body is arranged on described first resin bed.
Optionally, also has the groove that is through to described first insulating barrier from described first conductive layer on described first base material.
Optionally, the width of described groove is less than or equal to 50 microns.
Optionally, described first base material is copper clad laminate CCL.
Optionally, a described N/2 hole falls into described groove among the projection of the plate face direction of described first base material in the part or all of projection of the plate face direction of described first base material.
Optionally, described protection upper body comprises: second base material and be arranged at adhesive layer on described second base material;
Described protection upper body bonds on described first resin bed by described adhesive layer.
Optionally, described second base material comprises second insulating barrier and the 3rd conductive layer, and wherein, described adhesive layer is arranged on described the 3rd conductive layer; Wherein, a described N/2 hole is in the part or all of projection of the plate face direction of described first base material, fall into the conductive region of described the 3rd conductive layer among the projection of the plate face direction of described first base material, perhaps a described N/2 hole overlaps in the projection of the plate face direction of described first base material with the conductive region of described the 3rd conductive layer in the projection of the plate face direction of described first base material.
Optionally, described protection upper body comprises: second base material and be arranged at second resin bed on described second base material and be arranged at adhesive layer on described second resin bed; Described protection upper body bonds on described first resin bed by described adhesive layer.
Optionally, described second base material comprises: second insulating barrier and the 3rd conductive layer, and wherein, described second resin bed is arranged on described the 3rd conductive layer; Wherein, a described N/2 hole is in the part or all of projection of the plate face direction of described first base material, fall into the conductive region of described the 3rd conductive layer among the projection of the plate face direction of described first base material, perhaps, a described N/2 hole overlaps in the projection of the plate face direction of described first base material with the conductive region of described the 3rd conductive layer in the projection of the plate face direction of described first base material.
Optionally, described first resin bed is epoxylite layer or phenolic resinoid layer.
Optionally, described second resin bed is epoxylite layer or phenolic resinoid layer.
Therefore; multichannel esd protection device in the embodiment of the invention; can adopt the high base plate for packaging processing technology of maturity or printed wire board machining process processing esd protection device, but not semiconducter process, be conducive to reduce difficulty of processing and the manufacturing cost of esd protection device.Next is to introduce the slurry that contains conducting particles and non-conductive particle in the esd protection device; for example; the N of first conductive layer conductive region comprises the N/2 second class conductive region and N/2 first kind conductive region; each first kind conductive region in N/2 first kind conductive region; respectively by the slurry within the different blind holes in N/2 the blind hole come with the individual second class conductive region of above-mentioned N/2 in the different second class conductive regions join; so; under normal working voltage; slurry within the hole keeps high-impedance state; slurry becomes low resistive state to realize electrostatic protection when voltage surpasses trigger voltage; and slurry is filled in the hole; possess extremely low parasitic capacitance and leakage current; the electric capacity that is conducive to the esd protection device that reduces to process; leakage current (for example; the esd protection device that embodiment of the invention scheme processes in addition can realize less than the parasitic capacitance appearance value of 0.2pf with less than the leakage current flow valuve of 100nA), this is to reducing for example distorted signals and the loss of high frequency/high speed circuit; reduce circuit power consumption; improving the operating efficiency of circuit and the fail safe of esd protection device work has great importance.And the embodiment of the invention is introduced resin material in the esd protection device; be conducive to further reduce manufacture difficulty and the manufacturing cost of esd protection device; and; delicate structure, the reliability of multichannel esd protection device are higher, and then are conducive to promote the market competitiveness of the esd protection device that embodiment of the invention scheme processes.Further, the embodiment of the invention has realized multichannel esd protection device fabrication, is conducive to further improve working (machining) efficiency like this, reduces manufacturing cost, and each road of the esd protection device that processes shared grounding end not, is conducive to improve reliability.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, to do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below, apparently, accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the schematic flow sheet that the embodiment of the invention provides a kind of processing method of multichannel electrostatic discharge protection device;
The processing schematic diagram of the multichannel electrostatic discharge protection device that Fig. 2～Figure 27 provides for the embodiment of the invention.
Embodiment
The embodiment of the invention provides a kind of multichannel esd protection device, in the hope of the cost of manufacture that reduces the esd protection device, the fail safe that improves the esd protection device.
Below in conjunction with the accompanying drawing in the embodiment of the invention, the technical scheme in the embodiment of the invention is clearly and completely described, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that obtains under the creative work prerequisite.
Term " first " in specification of the present invention and claims and the above-mentioned accompanying drawing, " second ", " the 3rd " " 4th " etc. (if existence) are for the similar object of difference, and needn't be used for describing specific order or precedence.The data that should be appreciated that such use suitably can exchanged under the situation, so as embodiments of the invention described herein for example can with except diagram here or describe those order enforcement.In addition, term " comprises " and " having " and their any distortion, intention is to cover not exclusive comprising, for example, comprised those steps or unit that process, method, system, product or the equipment of series of steps or unit are not necessarily limited to clearly list, but can comprise clearly do not list or for these processes, method, product or equipment intrinsic other step or unit.
For ease of better understanding static, simply static is introduced below.
Static is a kind of natural phenomena of objective reality, and the mode of generation is multiple, as contact, friction, appliance chamber induction etc.The characteristics of static be gather for a long time, high voltage, low electric weight, little electric current and action time short characteristics.Human body self action or with the contacting of other objects, separate, factors such as friction or induction can produce the static of several kilovolts even volts up to ten thousand.Static causes serious harm in a plurality of fields.Triboelectrification and static electricity on human body are that two in the electronics industry endangers greatly, usually cause the electric equipment products fluctuation of service, even damage.The major measure of electrostatic defending is static leakage, dissipation, neutralization, humidification in the production process, shielding and ground connection.Static electricity on human body's guard system mainly contains compositions such as ESD-preventive wrist strap, ankle band, heel band, work clothes, footgear, cap, gloves or fingerstall, has electrostatic leakage, functions such as neutralization and shielding.Electrostatic defending work is a long-term system engineering, and the error of any link or careless omission all will cause the failure of electrostatic defending work.
Static can be described as ubiquitous in daily life, on our body and just have very high electrostatic potential, several kilovolts even several ten thousand volts on every side.May know from experience less than the pass by carpet static of chemical fibre of, people at ordinary times approximately is 35000 volts, about 7000 volts of the plastics specification of browsing, and for some responsive instruments, this voltage may be fatal harm.Electrostatics is mainly studied the static application technology, as electrostatic precipitation, xerography, static biological effect etc.Main is the electrostatic defending technology, electrostatic hazard as electronics industry, petroleum industry, weapon industry, textile industry, rubber industry and space flight and military field, seek to reduce loss that static causes in recent years along with develop rapidly, wide application of micro-electronic technology and the electromagnetic environment of science and technology become increasingly complex, the Electromagnetic Environmental Effect of static discharge such as electromagnetic interference and emc issue have become a problem that presses for solution.On the one hand, the high speed of the extensive use of the macromolecular material that some resistivity are very high such as the goods of plastics or rubber etc. and modern production process, make electrostatic energy run up to very high degree, on the other hand, the production of electrostatic sensitive material and use, as light-end products, gunpowder, solid electronic device etc., department of industrial and mining enterprises is subjected to the harm of static also more and more outstanding, and electrostatic hazard has caused quite serious consequence and loss.It can cause electronics industry year with a toll of the over ten billion dollar inadvertently with the electronic device puncture of costliness.
ESD is exactly the quick neutralization of electric charge, and the expense of the annual flower of electronics industry on this has more than the multi-million dollar.All materials have electronics and proton all by atomic building in the atom.When material obtains or loses electronics, it will lose electric equilibrium and become electronegative or positive electricity, and positive charge or negative electrical charge will make static on the object band in the material surface accumulation.The electric charge accumulation produces because material contacts with each other to separate usually, also can be caused by friction, is called triboelectrification.There are many factors can influence the accumulation of electric charge, comprise contact pressure, coefficient of friction and separating rate etc.Electrostatic charge constantly accumulation up to the effect that causes charge generation stop, electric charge is released or reach enough intensity can puncture ambient substance till.After dielectric was breakdown, electrostatic charge can obtain balance very soon, and the quick neutralization of this electric charge just is called static discharge.Because quick discharge voltage on very little resistance, vent discharge fails to be convened for lack of a quorum very big, may surpass 20 amperes, if this discharge is undertaken by integrated circuit or other Electrostatic Discharge Sensitives, so big electric current will cause serious harm to the circuit that is designed to conducting microampere only or milliampere level electric current.
Wherein, can have multiple model to can be used to explain device and how to suffer damage, for example manikin, machine mould, Charged Device Model and electric field are to influence of device etc.Wherein, for example for automatic assembly equipment, mainly consider back three kinds of damage models.For example, machine mould/pattern, automatic assembly equipment uses guide rail, driving-belt, slideway, element conveyer and other devices to come moving device, make it the direction motion by technological requirement, if the equipment design is improper, driving-belt may accumulate a large amount of electric charges with transporting in the system, and these electric charges will be released by device in technical process.Equipment unit just is called machine mould/pattern by the device discharge.Charged Device Model/pattern, if device has been accumulated electric charge because of certain reason and contacted with a charged few surface, electric charge will be released by the current-carrying part on the device.When device discharges to other materials, just be called the electrification device pattern, represent with Charged Device Model.Electric field influence, electric field induction can produce potential difference between the resistive circuit of IC, cause the insulator dielectric breakdown.The Another reason that causes inefficacy is that the electric charge on the device can be polarized in electric field, thereby produces potential difference and anisotropy charge discharge, forms dual discharge or neutralization.Can use the material with different resistance characteristics in ESD control, these materials are used in the automatic assembly equipment can obtain desirable effect.
And special esd protection device in the E-consumer class, digital product.Operation principle is in the electrical equipment course of normal operation, and the esd protection device just shows as low capacitance (being generally less than 5pf) capacitive reactance characteristic, can not exert an influence to the normal opering characteristic of electric apparatus, and can not have influence on signal and the transfer of data of electronic product; When the overvoltage at device two ends reaches predetermined breakdown voltage, (may reach nanosecond) rapidly and make a response, pass through with leakage current between the amount amplifying stage of geometric progression, thereby reach absorption, weaken static to interference and the influence of circuit characteristic.Simultaneously, because the particularity of the formation material of esd protection device, the esd protection device often all is by static being absorbed and dissipate, that is shows as a charging and discharging process and reach equipment is carried out electrostatic defending.
Embodiment of the processing method of multichannel electrostatic discharge protection device of the present invention, wherein, a kind of processing method of multichannel electrostatic discharge protection device, can comprise: process N through hole at first base material, wherein above-mentioned N is greater than 2 even number, and first base material comprises first conductive layer, second conductive layer and first insulating barrier between first conductive layer and second conductive layer; By electroplating and/or chemical plating filled conductive material in an above-mentioned N through hole; Carry out figure processing at second conductive layer, second conductive layer is divided into N conductive region of not conducting mutually; Carry out figure processing and/or process the blind groove that is through to first insulating barrier at first conductive layer at first conductive layer, first conductive layer is divided into N conductive region of not conducting mutually, wherein, each conductive region in the N of first conductive layer conductive region, respectively by the interior conductive materials of the different through holes in the above-mentioned N through hole, with the different conductive region conductings in N the conductive region of second conductive layer; At first conductive layer first resin bed is set; At first resin bed protective layer is set; Process N/2 the blind hole that is through to first insulating barrier at above-mentioned protective layer; Filling paste within an above-mentioned N/2 blind hole, wherein, the N of first conductive layer conductive region comprises N/2 the second class conductive region and N/2 first kind conductive region, each first kind conductive region in above-mentioned N/2 first kind conductive region, join by the different second class conductive regions in the slurry in the different blind holes in the above-mentioned N/2 blind hole and above-mentioned N/2 the second class conductive region respectively, wherein, above-mentioned slurry contains conducting particles and non-conductive particle; Above-mentioned protective layer is peeled off from first resin bed; At first resin bed protection upper body is set.
See also Fig. 1, the schematic flow sheet of the processing method of a kind of electrostatic discharge protection device that Fig. 1 provides for the embodiment of the invention.As shown in Figure 1, the processing method of a kind of electrostatic discharge protection device of providing of the embodiment of the invention can comprise following content:
101, process N through hole at first base material, wherein, above-mentioned N comprises first conductive layer, second conductive layer and first insulating barrier between first conductive layer and second conductive layer greater than 2, the first base materials.
In some embodiments of the invention, for example can process N through hole at first base material by machine drilling or laser drill mode (or other processing mode).
Be understandable that, but the N value 2,4,6,8 in the embodiment of the invention, 10 or other bigger value.
Wherein, first base material can be the substrate of copper clad laminate (CCL, copper clad laminate) or other type.Wherein, first insulating barrier for example can be epoxylite layer or the resin bed of phenolic resinoid layer or other type of resin material or the insulation material layer of other type.
102, by electroplating and/or chemical plating filled conductive material in an above-mentioned N through hole.
In some embodiments of the invention, by electroplate and/or chemical plating in an above-mentioned N through hole in the filled conductive material, may thicken the conductive materials of first conductive layer and second conductive layer, if need not to thicken the conductive materials of first conductive layer and/or second conductive layer, before above-mentioned step by plating and/or chemical plating filled conductive material in an above-mentioned N through hole, can on first conductive layer and/or second conductive layer, paste anti-plated film in other zone, and expose an above-mentioned N through hole.
Be appreciated that by electroplating and/or chemical plating filled conductive material in N through hole, interconnected to form interlayer, be conducive to the interconnected formation precision of better controlled interlayer like this, improve a lot aspect the precision than prior art.
103, carry out figure processing at second conductive layer, second conductive layer is divided into N conductive region of not conducting mutually.
In some embodiments of the invention, for example can carry out figure processing at second conductive layer by chemical etching or laser ablation (or other possible processing mode), second conductive layer is divided into N conductive region of not conducting mutually.Wherein, the area of this N conductive region of second conductive layer may equate or part equates, but or the area of each conductive region in this N conductive region of second conductive layer also each is unequal.
104, carry out figure processing and/or process the blind groove that is through to first insulating barrier at first conductive layer at first conductive layer, first conductive layer is divided into N conductive region of not conducting mutually, each conductive region in above-mentioned N the conductive region of first conductive layer wherein, respectively by the interior conductive materials of the different through holes in the above-mentioned N through hole, with the different conductive region conductings in above-mentioned N the conductive region of second conductive layer.
Wherein, the conductive region t11 in above-mentioned N the conductive region of first conductive layer for example, can be by the conductive materials in the through hole k1 in the above-mentioned N through hole, with the conductive region t21 conducting in above-mentioned N the conductive region of second conductive layer, wherein, conductive region t11 is any one conductive region in above-mentioned N the conductive region of first conductive layer, through hole k1 is any one through hole in the above-mentioned N through hole, and conductive region t21 is any one conductive region in above-mentioned N the conductive region of second conductive layer.And in some embodiments of the invention, conductive region t11 yet can be by conductive materials and the conductive region t21 conducting in the through hole k2, wherein, through hole k2 is different from any one through hole in the above-mentioned N through hole, that is to say, conductive region t11 can be by conductive materials and the conductive region t21 conducting in one or more through holes (as through hole k1 and through hole k2), to improve reliability.Be understandable that, conductive region t11 in above-mentioned N the conductive region of first conductive layer only with above-mentioned N conductive region of second conductive layer in conductive region t21 conducting, and not can with above-mentioned N conductive region of second conductive layer in other any one conductive region conducting.Certainly, each through hole of the conductive region of the conductive region of conducting first conductive layer and second conductive layer is non-intersect.
In some embodiments of the invention, if by carry out figure processing at first conductive layer, first conductive layer is divided into N conductive region of not conducting mutually, then for example can be by chemical etching or laser ablation (perhaps other possible processing mode), carry out figure processing at first conductive layer, first conductive layer is divided into N conductive region of not conducting mutually.Wherein, the area of this N conductive region of first conductive layer may equate or part equates, but or the area of each conductive region in this N conductive region of first conductive layer also each is unequal.
In other embodiment of the present invention, if by process the blind groove that is through to first insulating barrier at first conductive layer, first conductive layer is divided into N conductive region of not conducting mutually, then for example can be by mechanical groove milling or laser groove milling mode (or other processing mode), process the blind groove that is through to first insulating barrier at first conductive layer, first conductive layer is divided into N conductive region of not conducting mutually, wherein the area of this N conductive region of first conductive layer may equate or part equates, but or the area of each conductive region in this N conductive region of first conductive layer also each is unequal.Wherein, the width of above-mentioned blind groove can be less than 50 microns or wideer or narrower.Wherein, the surface that for example may extend into first insulating barrier in the above-mentioned blind groove or the inside of first insulating barrier.
In some embodiments of the invention, also can carry out figure processing at first conductive layer, and process the blind groove that is through to first insulating barrier at first conductive layer, first conductive layer is divided into N conductive region of not conducting mutually, that is, cooperate first conductive layer to be divided into N conductive region of not conducting mutually by figure processing and the processing of blind groove.Wherein, the surface that for example may extend into first insulating barrier in the above-mentioned blind groove or the inside of first insulating barrier.
105, at first conductive layer first resin bed is set.
In some embodiments of the invention, can at first conductive layer first resin bed be set by modes such as pressing, printing or coatings.Be appreciated that then the part resin of first resin bed can be filled among the above-mentioned blind groove that is through to first insulating barrier that processes if processed the blind groove that is through to first insulating barrier at first conductive layer.
In some embodiments of the invention, first resin bed for example can be the resin bed of epoxylite layer or phenolic resinoid layer or other type of resin material.
106, at first resin bed protective layer is set.
In some embodiments of the invention, can at first resin bed protective layer be set by modes such as pressing, printing or coatings.Wherein, above-mentioned protective layer for example can be, the protective material of epoxylite layer or acrylic resin layer or other type.In actual applications, selected protective layer material for example has peelable characteristic preferably, so that follow-up this protective layer conveniently can being peeled off from second insulating barrier.
107, process N/2 the blind hole that is through to first insulating barrier at above-mentioned protective layer.
In some embodiments of the invention, for example can process N/2 the blind hole that is through to above-mentioned first insulating barrier at above-mentioned protective layer by machine drilling or laser drill mode (perhaps other possible processing mode).Wherein, the part or all of blind hole in the above-mentioned N/2 blind hole for example may extend into the surface of first insulating barrier, and perhaps, the part or all of blind hole in the above-mentioned N/2 blind hole for example may extend into the inside of first insulating barrier.
108, filling paste in an above-mentioned N/2 blind hole, wherein, the N of first conductive layer conductive region comprises the second class conductive region (conductive region that namely is used for ground connection) and N/2 first kind conductive region, each first kind conductive region in above-mentioned N/2 first kind conductive region, join by the slurry in the different blind holes in the above-mentioned N/2 blind hole and the above-mentioned second class conductive region respectively, wherein, above-mentioned slurry contains conducting particles and non-conductive particle.
In each embodiment of the present invention, first kind conductive region can be received different signal ends with the second class conductive region, for example, but a wherein class conductive region ground connection of first kind conductive region and the second class conductive region.
Wherein, for example, first kind conductive region t11 in above-mentioned N/2 the first kind conductive region of first conductive layer, can be by the slurry in the blind hole mk1 in the above-mentioned N/2 blind hole, with the second class conductive region t12 conducting in the individual second class conductive region of the above-mentioned N/2 of first conductive layer, wherein, above-mentioned first kind conductive region t11 can be any one first kind conductive region in above-mentioned N/2 the first kind conductive region of first conductive layer, blind hole mk1 is any one blind hole in the above-mentioned N/2 blind hole, and the second class conductive region t12 can be any one conductive region in N/2 the second class conductive region.And in some embodiments of the invention, first kind conductive region t11 yet can join by the above-mentioned second class conductive region t12 conducting of the slurry in the blind hole mk2 and first conductive layer, and wherein blind hole mk2 is different from any one blind hole in the above-mentioned N/2 blind hole.That is to say that first kind conductive region t11 can join by slurry and the second class conductive region t12 in one or more blind holes (as blind hole mk1 and blind hole mk2), to improve reliability.Be appreciated that any two first kind conductive regions in above-mentioned N/2 the first kind conductive region of first conductive layer, do not join by the slurry in the blind hole.
Wherein, can comprise silicones and/or epoxylite etc. in the slurry, slurry also can comprise other non-conductive particle certainly.Under normal working voltage, the slurry in the hole keeps high-impedance state, and slurry becomes low resistive state to realize electrostatic protection when voltage surpasses trigger voltage; namely; the resistance value of slurry may be different under different voltage, and when magnitude of voltage was crossed trigger voltage, the slurry resistance-variable was little.Slurry is filled in the hole; possess extremely low parasitic capacitance and leakage current; the electric capacity and the leakage current that are conducive to the esd protection device that reduces to process, this to the distorted signals and the loss that reduce high frequency/high speed circuit for example, reduce circuit power consumption, the operating efficiency that improves circuit and the fail safe of esd protection device work and have great importance.
In actual applications, can select dissimilar slurries as required, to satisfy different trigger voltage protection needs.Wherein, slurry contains conducting particles and non-conductive particle, and wherein, non-conductive particle for example can comprise: silicones, epoxy resin or other Available Material.Conducting particles for example can be (as conductive various metal oxides etc.) such as the metal dust (as copper powder, silver powder or other metallic conductor) of micron order (or greater or lesser) or oxides.The additive etc. that certainly, also can comprise conducting particles and/or non-conductive particle in the slurry.
Following silicones is done simple the introduction, and silicones typically refers to the resin that a class that is made of the silica construction unit is subjected to heat solidifiable and forms tridimensional network.Silicones is to have highly cross-linked cancellated polysiloxane, has the double grading of organic resin and inorganic material concurrently.Normally use the various mixtures of methyl trichlorosilane, dimethyldichlorosilane, phenyl trichlorosilane, diphenyl dichlorosilane or dichloromethyl phenylsilane, in the presence of organic solvent such as toluene, add water decomposition at a lower temperature, obtain the acidic hydrolysis thing.The initial product of hydrolysis is ring-type, line style and mixture cross-linked polymer, also contains considerable hydroxyl usually.Except disacidify, neutral first condensation polymer is thermal oxidation or further polycondensation in the presence of catalyst in air, forms highly cross-linked cubic network structure at last through washing for hydrolysate.Silicones is a kind of heat cured plastics, and one of performance that it is the most outstanding is excellent thermo oxidative stability.250 ℃ of heating are after 24 hours, and silicones weightlessness only is 2～8%.Another outstanding performance of silicones is excellent electrical insulation capability, and it all can keep its good insulation performance performance in wide temperature and frequency range.
The classification silicones of silicones is to be main chain with silicon-oxygen-silicon, is connected with half inorganic polymer of the cross-linking type of organic group on the silicon atom.It is along with direct method production organic silicon monomer silicones has outstanding weatherability, is that any organic resin is too far behind to catch up, even under ultraviolet acute irradiation, silicones is anti-yellowing also.The silicone resin adhesive organic silicon adhesive can be divided into the silicones by raw material sources and is the adhesive of base-material and is the adhesive of base-material with silicon rubber, wherein, the former is mainly used in glueing joint metal and heat-resisting silicones is good to the metal bonding performance of iron, aluminium and tin and so on, and glass and pottery are also gluedd joint easily.
Wherein, the silicones type comprises following kind: methyl phenyl silicone resin, methyl silicon resin, low phenyl methyl silicones, the organic siliconresin emulsion, the self-drying type organic siliconresin, the high temperature modification organic siliconresin, epoxy modified silicone resin, organosilicon polyester modified resin, self-drying type environmental protection organic siliconresin, environment-protecting silicone resin, the non-viscous paint organic siliconresin, high light organic siliconresin, the benzyl transparent silicon resin, methyl transparent organic silicon resin, the bonding silicones of mica, poly-methyl silicon resin, amino silicone, fluorine silicon resin, silicon resin solution, the organosilicon-epoxide resin, organic silicon polyester resin, the solvent-resisting organic siliconresin, the organic siliconresin adhesive, the fluorine silicon resin Silicone Sealants, the high-temperature resisting methyl silicones, the self-drying type organic silicon insulating varnish, methyl MQ silicones, the vinyl MQ silicones, organosilicon acrylic resin coating etc.
109, above-mentioned protective layer is peeled off from first resin bed.
110, at first resin bed protection upper body is set.
Wherein, can will protect the upper body to be arranged on first resin bed by multiple possible mode.Slurry in one of the purpose that first resin bed arranges the protection upper body is protection first resin bed, first conductive layer and N/2 blind hole etc.The structure that is appreciated that the protection upper body can be diversified.
In some embodiments of the invention, above-mentioned protection upper body comprises: second base material and be arranged at adhesive layer on second base material.Wherein, at first resin bed protection upper body being set comprises: by above-mentioned adhesive layer above-mentioned protection upper body is bonded on first resin bed.Under this scene, for example, second base material can comprise second insulating barrier and the 3rd conductive layer (wherein, the 3rd conductive layer for example can be the conductive layer of copper layer or other material), and wherein, above-mentioned adhesive layer is arranged on the 3rd conductive layer.Perhaps, second base material can comprise second insulating barrier, the 3rd conductive layer and the 4th conductive layer (wherein the 3rd conductive layer and the 4th conductive layer for example can be the conductive layer of copper layer or other material), wherein, second insulating barrier is between the 3rd conductive layer and the 4th conductive layer, wherein, above-mentioned adhesive layer is arranged on the 3rd conductive layer.Wherein, an above-mentioned N/2 blind hole is in the part or all of projection of the plate face direction of first base material, can fall into the conductive region of the 3rd conductive layer among the projection of the plate face direction of first base material, perhaps, an above-mentioned N/2 blind hole can overlap in the projection of the plate face direction of first base material with the conductive region of the 3rd conductive layer in the projection of the plate face direction of first base material.For example the 3rd conductive layer can comprise a plurality of conductive regions (for example comprising N/2 conductive region), and the area of each conductive region all can be greater than or equal to the cross-sectional area of a blind hole.If second base material comprises the 3rd conductive layer (wherein because the 3rd conductive layer has certain mechanical strength usually); then in the time will protecting the upper body to press on first resin bed; the 3rd conductive layer can play the certain protection effect to the slurry in the above-mentioned N/2 blind hole; if second insulating barrier has enough mechanical strengths certainly, then the 3rd conductive layer also can omit.
In other embodiment of the present invention, above-mentioned protection upper body can comprise second base material and be arranged at second resin bed on second base material and be arranged at adhesive layer on second resin bed.Wherein, at first resin bed protection upper body being set for example can comprise: by above-mentioned adhesive layer above-mentioned protection upper body is bonded on first resin bed.Under this scene, for example, second base material can comprise: second insulating barrier and the 3rd conductive layer are (wherein, the 3rd conductive layer for example can be the conductive layer of copper layer or other material), wherein, second resin bed is arranged on the 3rd conductive layer, perhaps, second base material can comprise second insulating barrier, the 3rd conductive layer and the 4th conductive layer are (wherein, the 3rd conductive layer and the 4th conductive layer for example can be the conductive layer of copper layer or other material), wherein, second insulating barrier is between the 3rd conductive layer and the 4th conductive layer, wherein, second resin bed is arranged on the 3rd conductive layer.Wherein, an above-mentioned N/2 blind hole can fall into the conductive region of the 3rd conductive layer among the projection of the plate face direction of first base material in the part or all of projection of the plate face direction of first base material; Perhaps, an above-mentioned N/2 blind hole can overlap in the projection of the plate face direction of first base material with the conductive region of the 3rd conductive layer in the projection of the plate face direction of first base material.For example, the 3rd conductive layer can comprise a plurality of conductive regions (for example can comprise N/2 conductive region), and the area of each conductive region all can be greater than or equal to the cross-sectional area of a blind hole.If second base material comprises the 3rd conductive layer (the 3rd conductive layer has certain mechanical strength usually); then in the time will protecting the upper body to press on first resin bed; the 3rd conductive layer can play the certain protection effect to the slurry in the above-mentioned N/2 blind hole; certainly; if second insulating barrier has enough mechanical strengths, then the 3rd conductive layer also can omit.
In some embodiments of the invention, first resin bed for example can be the resin bed of epoxylite layer or phenolic resinoid layer or other type of resin material.Second insulating barrier for example can be epoxylite layer or the resin bed of phenolic resinoid layer or other type of resin material or the insulation material layer of other type.Wherein, second base material for example can be the substrate of CCL or other type.
For ease of better understanding and implement the such scheme of the embodiment of the invention, carry out application scenarios for example below in conjunction with accompanying drawing.
Please in the lump referring to Fig. 2～Figure 27, wherein, the processing schematic diagram of a kind of esd protection device that Fig. 2～Figure 27 provides for the embodiment of the invention.
Fig. 2 shows a kind of structure for example of first base material 200.Wherein, first base material 200 comprises first conductive layer 201, first insulating barrier 202 and second conductive layer 203, and wherein, first insulating barrier 202 is between first conductive layer 201 and second conductive layer 203.
Fig. 3 is illustrated in and has got out N through hole 204 on first base material 200.Mainly equaling 6 with N in the accompanying drawing is example, and certainly in actual applications, N can be for greater than 2 any positive 2 even number.
Fig. 4 is the elevational schematic view that has got out N through hole 204 first base material 200 afterwards.
Fig. 5 shows by chemical plating and/or electroplates filled conductive material 205 in N through hole 204.
Second conductive layer 203 that Fig. 6 shows at first base material 200 carries out figure processing, first conductive layer 201 has been divided into N conductive region of not conducting mutually.
First conductive layer 201 that Fig. 7 shows at first base material 200 carries out figure processing.
First conductive layer 201 that Fig. 8 shows at first base material 200 processes the blind groove 206 that is through to first insulating barrier 202, first conductive layer 201 is divided into N conductive region of not conducting mutually.Each conductive region in above-mentioned N the conductive region of first conductive layer 201 wherein is respectively by the interior conductive materials 205 of the different through holes in the above-mentioned N through hole 204, with the different conductive region conductings in above-mentioned N the conductive region of second conductive layer 203.
Fig. 9 is through a kind of tangent plane schematic diagram after Fig. 6～processing shown in Figure 9, wherein, Fig. 9 illustrates the inside that blind groove 206 is through to first insulating barrier 202, certainly, under other application scenarios, blind groove 206 also can only be through to the surface of first insulating barrier 202 and not extend to the inside of first insulating barrier 202.
Figure 10 is illustrated in first resin bed 207 is set on first conductive layer 201, and first resin bed 207 shown in Figure 10 is filled blind groove 206.
Figure 11 is illustrated on first resin bed 207 protective layer 208 is set.
Figure 12 is illustrated in and processes N/2 the blind hole 209 that is through to first insulating barrier 202 on the protective layer 208.Wherein, the N/2 that processes shown in a Figure 12 blind hole 209 falls into blind groove 206 among the projection of the plate face direction of first base material in the part or all of projection of the plate face direction of first base material.
Figure 13 is illustrated in filling paste 210 in N/2 the blind hole 209.Wherein, each first kind conductive region in N/2 first kind conductive region joins with the above-mentioned second class conductive region by the slurry 210 in the different blind holes in the above-mentioned N/2 blind hole 209 respectively.
Figure 14 is illustrated in protective layer 208 is peeled off from first resin bed 207, and wherein, Figure 14 illustrates part slurry 210 and also has been stripped from, and so far, the lower body of esd protection device machines.
Figure 15 is a kind of schematic top plan view of structure shown in Figure 14.
Figure 16～Figure 22 shows the processing mode of two kinds of protection upper bodies of the esd protection device of having given an example out.
Wherein, a kind of structure for example of second substrate 300 shown in Figure 16.Wherein, second base material 300 comprises the 4th conductive layer 301, second insulating barrier 302 and the 3rd conductive layer 303, and wherein, second insulating barrier 302 is between the 4th conductive layer 301 and the 3rd conductive layer 303.
Figure 17 is illustrated in and carries out figure processing on the 3rd conductive layer 303 of second substrate 300.
Figure 18 is illustrated in the elevational schematic view of carrying out on the 3rd conductive layer 303 after figure is processed, and wherein the 3rd conductive layer 303 is split into N/2 conductive region of not conducting mutually.
Figure 19 is illustrated in second resin bed 304 is set on the 3rd conductive layer 303.
Figure 20 is illustrated on second resin bed 304 adhesive layer 305 is set.
Figure 21 is illustrated on the adhesive layer 305 and mills out the blind groove that (for example, can by laser groove milling mode or mechanical groove milling mode) be through to the 3rd conductive layer 303, to expose the part or all of conductive region of the 3rd conductive layer 303.So far, a kind of protection upper body of esd protection device machines.Figure 16～Figure 21 shows and processes the protection upper body that comprises second resin bed 304.
Figure 16～Figure 18, and Figure 22 illustrates and processes the protection upper body that does not comprise second resin bed 304.
Figure 22 shows on the basis of structure shown in Figure 180, further at the 3rd conductive layer 303 adhesive layer 305 is set, and so far, the another kind of esd protection device protection upper body machines.Wherein, the 4th conductive layer 301 and the 3rd conductive layer 303 in the protection shown in Figure 22 upper body all can omit; namely second base material 300 can be second insulating barrier 302, and can obtain a kind of protection upper body of esd protection device after second insulating barrier 302 arranges adhesive layer 305.
Figure 23 illustrates protection shown in Figure 21 upper body, bonds on the lower body of esd protection device shown in Figure 15, obtains a kind of esd protection device of structure.Figure 24 is the schematic diagram of the esd protection device after the basis of structure shown in Figure 23 dispenses the 4th conductive layer 301.Wherein, the blind hole of above-mentioned N/2 shown in Figure 23 209 is in the projection of the plate face direction of first base material 200, fall into the conductive region of the 3rd conductive layer 303 among the projection of the plate face direction of first base material 200, namely the area of each conductive region in the N/2 of the 3rd conductive layer conductive region all can be greater than or equal to the cross-sectional area of a corresponding blind hole 209.Because the 3rd conductive layer 303 has certain mechanical strength usually; then in the time will protecting the upper body to press on first resin bed 207; the 3rd conductive layer 303 can play the certain protection effect to the slurry 210 in the above-mentioned N/2 blind hole 209; certainly; if second insulation; 302 have enough mechanical strengths, and then the 3rd conductive layer 303 also can omit.Wherein, has space (this space can be airtight or unsealed space) between slurry shown in Figure 23 210 and the 3rd conductive layer 303.
Figure 25 illustrates protection shown in Figure 22 upper body, bonds on the lower body of esd protection device shown in Figure 15, obtains the esd protection device of another kind of structure.Figure 26 is the esd protection device schematic diagram after the 4th conductive layer 301 is omitted on the basis of structure shown in Figure 25.Wherein, the blind hole of above-mentioned N/2 shown in Figure 24 209 is in the projection of the plate face direction of first base material 200, fall into the conductive region of the 3rd conductive layer 303 among the projection of the plate face direction of first base material 200, namely the area of each conductive region in the N/2 of the 3rd conductive layer conductive region all can be greater than or equal to the cross-sectional area of a corresponding blind hole 209.Because the 3rd conductive layer 303 has certain mechanical strength usually; then in the time will protecting the upper body to press on first resin bed 207; the 3rd conductive layer 303 can play the certain protection effect to the slurry 210 in the above-mentioned N/2 blind hole 209; certainly; if second insulation 302 has enough mechanical strengths, then the 3rd conductive layer 303 also can omit.Figure 27 is the schematic diagram of the esd protection device after the 3rd conductive layer 302 is omitted on the basis of structure shown in Figure 26.
Be understandable that the structure of the protection upper body of esd protection device is not limited to give an example among the figure.
Be appreciated that Fig. 2～esd protection device fabrication mode shown in Figure 27 only is for example, also can do the adjustment of flexible suitability in actual applications.
Therefore; the esd protection device fabrication scheme that provides in the embodiment of the invention; can adopt the high base plate for packaging processing technology of maturity or printed wire board machining process processing esd protection device, but not semiconducter process, be conducive to reduce difficulty of processing and the manufacturing cost of esd protection device.Next is to introduce the slurry that contains conducting particles and non-conductive particle in the esd protection device; for example; the N of first conductive layer conductive region comprises N/2 the second class conductive region and N/2 first kind conductive region; each first kind conductive region in N/2 first kind conductive region; respectively by the slurry within the different blind holes in N/2 the blind hole come with the individual second class conductive region of above-mentioned N/2 in the different second class conductive regions join; so then under normal working voltage; slurry within the hole keeps high-impedance state; slurry becomes low resistive state to realize electrostatic protection when voltage surpasses trigger voltage; and slurry is filled in the hole; possess extremely low parasitic capacitance and leakage current; the electric capacity that is conducive to the esd protection device that reduces to process; leakage current (for example; the esd protection device that embodiment of the invention scheme processes in addition can realize less than the parasitic capacitance appearance value of 0.2pf with less than the leakage current flow valuve of 100nA), this is to reducing for example distorted signals and the loss of high frequency/high speed circuit; reduce circuit power consumption; improving the operating efficiency of circuit and the fail safe of esd protection device work has great importance.And the embodiment of the invention is introduced resin material in the esd protection device, is conducive to further reduce manufacture difficulty and the manufacturing cost of high esd protection device, and then is conducive to promote the market competitiveness of the esd protection device that embodiment of the invention scheme processes.Further, the embodiment of the invention realizes multichannel esd protection device (comprising N/2 protection branch road) processing, and each road shared grounding end of the esd protection device that processes, is conducive to further improve working (machining) efficiency like this, reduces manufacturing cost.
The embodiment of the invention also provides multichannel esd protection device.The for example structure of multichannel esd protection device can be shown in any width of cloth of Figure 23～Figure 27.
Wherein, multichannel esd protection device can comprise:
Lower body (structure of lower body can as shown in figure 14) and protection upper body,
Wherein, lower body comprises: first base material and first resin bed 207, wherein, first base material comprises first conductive layer 201, second conductive layer 203 and first insulating barrier 202 between first conductive layer 201 and second conductive layer 203, first resin bed 207 is arranged on first conductive layer 201, be processed with N hole on first base material, above-mentioned N is filled with conductive materials 205 in the hole, second conductive layer 203 comprises N conductive region of not conducting mutually, first conductive layer 201 comprises N conductive region of not conducting mutually, each conductive region in the N of first conductive layer 201 conductive region wherein, respectively by the interior conductive materials 205 of the different through holes in the above-mentioned N hole, with the different conductive region conductings in N the conductive region of second conductive layer 203; Wherein, above-mentioned lower body also has N/2 the hole that is through to first insulating barrier 202 from first resin bed 207, above-mentioned N/2 is filled with slurry 210 in the hole, the N of first conductive layer 201 conductive region comprises N/2 the second class conductive region and N/2 first kind conductive region, each first kind conductive region in above-mentioned N/2 first kind conductive region, respectively by the slurry 210 in the different holes in the above-mentioned N/2 hole, join with the different conductive regions in above-mentioned N/2 the second class conductive region, wherein, above-mentioned slurry contains conducting particles and non-conductive particle.
N is the even number greater than 2.
Above-mentioned protection upper body is arranged on first resin bed 207.
In some embodiments of the invention, also has the groove that is through to first insulating barrier 202 from first conductive layer 201 on first base material.Concrete structure can be as Fig. 8 and groove 206 shown in Figure 9.
In some embodiments of the invention, the width of above-mentioned groove can be less than or equal to 50 microns, certainly also can be wideer or narrower.
In some embodiments of the invention, first base material can be the substrate of copper clad laminate CCL or other type.
In some embodiments of the invention, an above-mentioned N/2 hole falls into above-mentioned groove among the projection of the plate face direction of first base material in the part or all of projection of the plate face direction of first base material.
In some embodiments of the invention, above-mentioned protection upper body comprises: second base material and the adhesive layer (concrete structure can be as shown in figure 22, and wherein, the 3rd conductive layer 303 and/or the 4th conductive layer 301 of second base material can omit) that is arranged on second base material.Shown in Figure 25～27, above-mentioned protection upper body can bond on first resin bed 207 by above-mentioned adhesive layer 305.
For example, second base material comprises second insulating barrier and the 3rd conductive layer, and wherein above-mentioned adhesive layer is arranged on the 3rd conductive layer; Wherein, an above-mentioned N/2 hole is in the part or all of projection of the plate face direction of first base material, fall into the conductive region of the 3rd conductive layer among the projection of the plate face direction of first base material, perhaps, an above-mentioned N/2 hole overlaps in the projection of the plate face direction of first base material with the conductive region of the 3rd conductive layer in the projection of the plate face direction of first base material.
In other embodiment of the present invention, above-mentioned protection upper body comprises: second base material and be arranged at second resin bed 304 on second base material and be arranged at adhesive layer 305 on second resin bed 304; Above-mentioned protection upper body bonds on first resin bed 207 by above-mentioned adhesive layer 305.
For example, second base material comprises: second insulating barrier 302 and the 3rd conductive layer 303, and wherein, second resin bed 302 is arranged on the 3rd conductive layer 303; Wherein, an above-mentioned N/2 hole is in the part or all of projection of the plate face direction of first base material, fall into the conductive region of the 3rd conductive layer 303 among the projection of the plate face direction of first base material, perhaps, an above-mentioned N/2 hole overlaps in the projection of the plate face direction of first base material with the conductive region of the 3rd conductive layer in the projection of the plate face direction of first base material.Wherein, has space (wherein, this space can be airtight or unsealed space) between slurry shown in Figure 23 210 and the 3rd conductive layer 303.
Optionally, first resin bed and/or second resin bed for example can be epoxylite layer or phenolic resinoid layer or other available resin bed.
Available understanding, Figure 23～multichannel esd protection device of structure for example shown in Figure 27, available processing mode based on said method embodiment is processed and is obtained, and also can obtain by similar other processing mode processing certainly.For Figure 23～situation of other viewing angle of the multichannel esd protection device of structure for example shown in Figure 27, can repeat no more referring to the associated description of Fig. 2～Figure 22 and above-described embodiment herein.
Need to prove, for aforesaid each method embodiment, for simple description, so it all is expressed as a series of combination of actions, but those skilled in the art should know, the present invention is not subjected to the restriction of described sequence of movement, because according to the present invention, some step can adopt other orders or carry out simultaneously.Secondly, those skilled in the art also should know, the embodiment described in the specification all belongs to preferred embodiment, and related action and module might not be that the present invention is necessary.In the above-described embodiments, the description of each embodiment is all emphasized particularly on different fields, do not have the part that describes in detail among certain embodiment, can be referring to the associated description of other embodiment.
More than the processing method of multichannel electrostatic discharge protection device that the embodiment of the invention is provided be described in detail, used specific case herein principle of the present invention and execution mode are set forth, the explanation of above embodiment just is used for helping to understand method of the present invention and core concept thereof; Simultaneously, for one of ordinary skill in the art, according to thought of the present invention, the part that all can change in specific embodiments and applications, to sum up, this description should not be construed as limitation of the present invention.
Claims (10)
1. a multichannel static discharges the esd protection device, it is characterized in that, comprising:
Lower body and protection upper body,
Wherein, described lower body comprises:
First base material and first resin bed, wherein, described first base material comprises first conductive layer, second conductive layer and first insulating barrier between described first conductive layer and described second conductive layer, described first resin bed is arranged on described first conductive layer, be processed with N hole on described first base material, described N is filled with conductive materials in the hole, described second conductive layer comprises N conductive region of not conducting mutually, described first conductive layer comprises N conductive region of not conducting mutually, wherein, each conductive region in the N of described first conductive layer conductive region, respectively by the interior conductive materials of the different through holes in the described N hole, with the different conductive region conductings in N the conductive region of described second conductive layer; Wherein, described lower body also has N/2 the hole that is through to described first insulating barrier from described first resin bed, described N/2 is filled with slurry in the hole, the N of described first conductive layer conductive region comprises N/2 the second class conductive region and N/2 first kind conductive region, each first kind conductive region in described N/2 first kind conductive region, respectively by the slurry in the different holes in the described N/2 hole, join with the different conductive regions in described N/2 the second class conductive region, wherein, described slurry contains conducting particles and non-conductive particle, and described N is the even number greater than 2;
Described protection upper body is arranged on described first resin bed.
2. multichannel static according to claim 1 discharges the esd protection device, it is characterized in that also having the groove that is through to described first insulating barrier from described first conductive layer on described first base material.
3. multichannel static according to claim 2 discharges the esd protection device, it is characterized in that,
The width of described groove is less than or equal to 50 microns.
4. multichannel static according to claim 1 discharges the esd protection device, it is characterized in that,
Described first base material is copper clad laminate CCL.
5. discharge the esd protection device according to each described multichannel static of claim 1 to 4; it is characterized in that; a described N/2 hole falls into described groove among the projection of the plate face direction of described first base material in the part or all of projection of the plate face direction of described first base material.
6. multichannel static according to claim 5 discharges the esd protection device, it is characterized in that,
Described protection upper body comprises: second base material and the adhesive layer that is arranged on described second base material;
Described protection upper body bonds on described first resin bed by described adhesive layer.
7. the multichannel static of stating according to claim 6 discharges the esd protection device, it is characterized in that described second base material comprises second insulating barrier and the 3rd conductive layer, and wherein, described adhesive layer is arranged on described the 3rd conductive layer; Wherein, a described N/2 hole is in the part or all of projection of the plate face direction of described first base material, fall into the conductive region of described the 3rd conductive layer among the projection of the plate face direction of described first base material, perhaps a described N/2 hole overlaps in the projection of the plate face direction of described first base material with the conductive region of described the 3rd conductive layer in the projection of the plate face direction of described first base material.
8. multichannel static according to claim 5 discharges the esd protection device, it is characterized in that,
Described protection upper body comprises: second base material and be arranged at second resin bed on described second base material and be arranged at adhesive layer on described second resin bed; Described protection upper body bonds on described first resin bed by described adhesive layer.
9. the multichannel static of stating according to Claim 8 discharges the esd protection device, it is characterized in that,
Described second base material comprises: second insulating barrier and the 3rd conductive layer, and wherein, described second resin bed is arranged on described the 3rd conductive layer; Wherein, a described N/2 hole is in the part or all of projection of the plate face direction of described first base material, fall into the conductive region of described the 3rd conductive layer among the projection of the plate face direction of described first base material, perhaps, a described N/2 hole overlaps in the projection of the plate face direction of described first base material with the conductive region of described the 3rd conductive layer in the projection of the plate face direction of described first base material.
10. 9 described multichannel static discharge the esd protection device as requested, it is characterized in that described first resin bed and/or described second resin bed are epoxylite layer or phenolic resinoid layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310295566.7A CN103346147B (en) | 2012-12-30 | Multi-channel electrostatic discharge protective device |
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| CN201310295566.7A CN103346147B (en) | 2012-12-30 | Multi-channel electrostatic discharge protective device |
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| CN201210585611.8A Division CN103107127B (en) | 2012-12-30 | 2012-12-30 | The processing method of multi-channel electrostatic discharge protective device |
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| CN1433067A (en) * | 2002-01-16 | 2003-07-30 | 翰立光电股份有限公司 | Package structure of display element |
| WO2011106751A1 (en) * | 2010-02-26 | 2011-09-01 | Shocking Technologies, Inc. | Electric discharge protection for surface mounted and embedded components |
| WO2012105515A1 (en) * | 2011-02-02 | 2012-08-09 | 昭和電工株式会社 | Composition for filling discharging gap and electrostatic discharge protector |
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| CN1310578A (en) * | 2000-02-22 | 2001-08-29 | 摩托罗拉公司 | Electrostatic discharge protection device for high-density printed circuit board |
| CN1433067A (en) * | 2002-01-16 | 2003-07-30 | 翰立光电股份有限公司 | Package structure of display element |
| WO2011106751A1 (en) * | 2010-02-26 | 2011-09-01 | Shocking Technologies, Inc. | Electric discharge protection for surface mounted and embedded components |
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