CN103018976B - Blue-phase liquid crystal display device - Google Patents
Blue-phase liquid crystal display device Download PDFInfo
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- CN103018976B CN103018976B CN201210535934.6A CN201210535934A CN103018976B CN 103018976 B CN103018976 B CN 103018976B CN 201210535934 A CN201210535934 A CN 201210535934A CN 103018976 B CN103018976 B CN 103018976B
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Abstract
The invention relates to a blue-phase liquid crystal display device. The blue-phase liquid crystal display device structurally comprises an upper polaroid, an upper substrate, a middle part, a lower substrate and a lower polaroid; the lower polaroid, the lower substrate, the middle part, the upper substrate and the upper polaroid are sequentially arranged from bottom to top according to an incident light passing sequence; and the middle part consists of blue-phase liquid crystals (BPLC), a first Pixel electrode, a second Pixel electrode, a fine gap, an insulating layer, a Common electrode and a bulge. According to the invention, by introducing the fine gap structure and the bottom surface Common electrode and through an edge field formed by the Pixel electrodes and the Common electrode, the light transmissivities of the upper parts of the electrodes are effectively improved, so that the light utilization rate of a blue-phase liquid crystal display is effectively improved. Meanwhile, the Pixel electrodes and the Common electrode below the Pixel electrodes can be used as storage capacitances, so that separate manufacturing of the storage capacitances is reduced and the actual aperture ratio (the light transmittance area) of the blue-phase liquid crystal display is improved.
Description
Technical field
The present invention's design be a kind of device of technical field of liquid crystal display, specifically a kind of device increasing blue phase liquid crystal (BPLC) display transmitance.
Background technology
Blue phase liquid crystal display has the response time of below millisecond, visual angle is wide and contrast is high feature, and in manufacturing process, do not need oriented layer, do not need to do very strict restriction to thickness of liquid crystal layer yet, cost of manufacture is low, manufacturing process is simpler, thus is considered to the most potential and becomes liquid crystal display of future generation.Tradition blue phase liquid crystal display carries out driving with the drive electrode form of coplanar converting LCD, need to make memory capacitance to obtain high voltage retention, owing to only having a small amount of light transmission in the region of electrode and making memory capacitance, and driving voltage is also higher.
Adopt with the pixel electrode of finedraw and public electrode is set below pixel electrode, form the printing opacity above electrode and the memory capacitance under pixel electrode, increase transmission region, improve transmittance, but driving voltage, the drive electrode structure comparing conventional co-planar conversion increases.In order to reduce driving voltage, people once proposed to adopt protrusion and protruding electrode structure to reduce driving voltage, and by optimizing protrusion shape, obtain higher transmitance and lower driving voltage, but because whole pixel still needs to make extra memory capacitance to keep voltage, so the transmittance of entirety is not high.
Summary of the invention
The object of the invention is to overcome the shortcoming existed in prior art, provide a kind of device of simple and effective raising light utilization efficiency, the driving voltage of driving voltage and conventional co-planar transfer electron structure is similar simultaneously.The present invention arranges the Pixel electrode of band finedraw structure and the Common electrode of below thereof on protrusion, by adjusting width and the number of finedraw, make it on protrusion or protrusion hypotenuse produces fringing field, the light utilization efficiency of effective raising blue phase liquid crystal display, because Pixel electrode and Common electrode form memory capacitance, reduce the part making separately memory capacitance, increase the actual aperture rate of liquid crystal display.
Technical scheme of the present invention is:
A kind of Blue-phase liquid crystal display device, its structure comprises: upper polarizer, upper substrate, center section, infrabasal plate and lower polaroid;
Its position is followed successively by lower polaroid, infrabasal plate, center section, upper substrate and upper polarizer according to incident ray from the bottom to top by order; Center section consist of blue phase liquid crystal (BPLC), a Pixel electrode, the 2nd Pixel electrode, finedraw, insulation course, Common electrode and protrusion,
Center section wherein between upper substrate and infrabasal plate is that in following two, distribution mode is arbitrary:
Distribution mode one: on the upper surface of infrabasal plate, uniform intervals is distributed with protrusion, Common electrode covers on protrusion, insulation course covers on Common electrode and infrabasal plate, one Pixel electrode hands over the 2nd Pixel electrode the insulating layer covered mutually above evenly spaced protrusion, there is finedraw between top on protrusion of a Pixel electrode or the 2nd Pixel electrode and bottom; One Pixel electrode and the 2nd Pixel electrode additive polarity opposite potential, blue phase liquid crystal is filled in the space between upper substrate and infrabasal plate;
Or, distribution mode two: the upper surface of infrabasal plate is equidistantly arrange bar shaped Common electrode, a layer insulating is covered above the blank parts of infrabasal plate and Common electrode, insulation course carries out pressing process, protrusion is positioned at directly over Common electrode, the section-bottom width of protrusion is less than Common electrode, one Pixel electrode 3 and the 2nd Pixel electrode 4 are positioned at above insulation course 6 and protrusion 10, finedraw 5 is there is in the one Pixel electrode 3 or the 2nd Pixel electrode 4 between the top and low side of protrusion, one Pixel electrode 3 and the 2nd Pixel electrode 4 additive polarity opposite potential, blue phase liquid crystal is filled in the space between upper substrate and infrabasal plate,
Described protrusion lateral cross section shape is triangle or trapezoidal, and longitudinal projection's shape is rectangle or one-tenth " it " shape, and be highly the half of liquid crystal thickness, scope is: 2-10 μm;
Described finedraw is obtained by etching ITO electrode, and the width range of finedraw and thin electrode can adjust according to Pixel electrode size and technique, and the width of finedraw is usually at 2-5 μm, and the width of the thin electrode of every bar is 1-5 μm.
Described Pixel electrode and the thickness of electrode scope of Common electrode are: 20nm-250nm.
The scope of described protrusion spacing is: 5-20 μm.
Described thickness of liquid crystal layer scope: 5-20 μm.
Be compared with the prior art, the invention has the beneficial effects as follows: by introducing finedraw structure and bottom surface Common electrode, by the fringing field that Pixel electrode and Common electrode are formed, effectively increase the light transmission rate above electrode, thus effectively add the light utilization efficiency of blue phase liquid crystal display.Meanwhile, Pixel electrode and the Common electrode below it can be used as memory capacitance, reduce the making of independent memory capacitance, improve the actual aperture rate (glazed area) of blue phase liquid crystal display.
By the detailed description below with reference to accompanying drawing, other aspects and features of the present invention become obvious.But it should be understood that the object design that this accompanying drawing is only used to explain, instead of as the setting of the scope that the present invention relates to.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail, wherein:
Fig. 1 is the structural representation of embodiment 1, the vertical view that (a) is lower substrate surface, and (b) is sectional view;
Fig. 2 is the V-T curve map of embodiment 1, and square line is existing IPS structure, and dotted line is protuberance electrode, and triangle line is the present embodiment structure.
Fig. 3 is the structural representation of embodiment 2, and (a) is vertical view, and (b) is sectional view;
Fig. 4 is the V-T curve map of embodiment 2, and square line is existing IPS structure, and dotted line is protuberance electrode, and triangle line is the present embodiment structure.
Fig. 5 is the structural representation of embodiment 3, and (a) is vertical view, and (b) is sectional view;
Fig. 6 is the V-T curve map of embodiment 3, and square line is existing IPS structure, and dotted line is protuberance electrode, and triangle line is the present embodiment structure.
Fig. 7 is the structural representation of embodiment 4, and (a) is vertical view, and (b) is sectional view;
Fig. 8 is the V-T curve map of embodiment 4, and square line is existing IPS structure, and dotted line is protuberance electrode, and triangle line is the present embodiment structure.
Fig. 9 is the transmission region figure in Traditional IP S structure and the present embodiment structure.
Embodiment
Below in conjunction with accompanying drawing, enforcement of the present invention is further described: the present embodiment is implemented under premised on technical solution of the present invention, give detailed embodiment and concrete operating process, but protection scope of the present invention is not limited to the embodiment of subordinate.
Embodiment 1
(wherein (a) vertical view that is lower substrate surface as shown in Figure 1, b () is sectional view), the structure of the Blue-phase liquid crystal display device of the present embodiment comprises: upper polarizer 1, upper substrate 2, blue phase liquid crystal (BPLC), a Pixel electrode 3, the 2nd Pixel electrode 4, finedraw 5, insulation course 6, Common electrode 7, infrabasal plate 8, lower polaroid 9 and triangular hill thing 10
Wherein:
In top, the lower surface of upper polarizer 1 is connected with the upper surface of upper substrate 2, in bottom, the upper surface of lower polaroid 9 is connected with the lower surface of infrabasal plate 8, other composition is between upper substrate 2 and infrabasal plate 8, on the upper surface of wherein infrabasal plate 8, uniform intervals is distributed with protrusion 10, Common electrode 7 covers on protrusion 10, insulation course 6 covers on Common electrode 7 and infrabasal plate, one Pixel electrode 3 and the 2nd Pixel electrode 4 are handed over above the insulation course 6 that covers mutually above evenly spaced protrusion 10, finedraw 5 is there is between top on protrusion of one Pixel electrode 3 or the 2nd Pixel electrode 4 and bottom, one Pixel electrode 3 and the 2nd Pixel electrode 4 additive polarity opposite potential, blue phase liquid crystal is filled in the space between upper substrate and infrabasal plate,
Described upper substrate 2 is 12 μm with the spacing of infrabasal plate 8.
Protrusion is transparent silicon nitride or earth silicon material, and its transverse cross-sectional shape is wide 8 μm, the triangle of high 4 μm, and longitudinal plan view shape is rectangle, and length equals the length of pixel electrode, and often the spacing of row protrusion is 15 μm.
Described finedraw 5 is realized by photoetching process, and its vertical view is rectangle, each Pixel electrode etches respectively two finedraws 5, the electrode integral width of outer ring is 10 μm, outer ring electrode strip width is 1 μm, and middle electrode strip is 3 μm, and the width of slit is 2.5 μm.
The electrode of a described Pixel electrode 3, the 2nd Pixel electrode 4 and Common electrode 7 is transparency conductive electrode, material is indium tin oxide material or other transparent conductive material, thickness is 100nm, be 10 μm and 40 μm with a Pixel electrode 3 of slit and the 2nd Pixel electrode 4 width and length, a Pixel electrode 3 and the 2nd Pixel electrode 4 spacing are 15 μm.
Described insulating layer material is silicon nitride or earth silicon material, and thickness is 100nm.
The glass substrate that described substrate uses for Thin Film Transistor-LCD.
The polaroid that described polaroid uses for Thin Film Transistor-LCD, model is G1220DU, and its orientation angles is positive and negative 45 degree (and the angles between the long limit of electrode).
Cole's constant K=12.68nmV of described blue phase liquid crystal
-2, light wavelength lambda=550nm.
A described Pixel electrode 3, the 2nd Pixel electrode 4 form memory capacitance with Common electrode 7.
The V-T curve (transmitance is with the change curve of change in voltage) of the present embodiment and existing IPS electrode and projected electrode as shown in Figure 2, the present embodiment shape electrode transmitance is 0.237, triangular convex shape electrode transmitance is 0.203, and common IPS electrode transmitance is 0.179.The present embodiment electrode compares triangular convex shape electrode and common IPS electrode, and transmitance adds 16.7% and 32.4% respectively.The on-state voltage 2.5V larger than the on-state voltage of common IPS electrode of the present embodiment, by changing electrode gap, is easy to driving voltage to lower.
Method for making content of the present invention is known technology, specifically can with reference to " TFTLCD panel designs and the structure packing technique " shown by Science Press, Tian Minbo leaf peak.
Embodiment 2
(wherein (a) vertical view that is lower substrate surface as shown in Figure 3, b () is sectional view), the structure of the Blue-phase liquid crystal display device of the present embodiment comprises: upper polarizer 1, upper substrate 2, blue phase liquid crystal (BPLC), a Pixel electrode 3, the 2nd Pixel electrode 4, finedraw 5, insulation course 6, Common electrode 7, infrabasal plate 8, lower polaroid 9 and triangular hill thing 10
Wherein:
In top, the lower surface of upper polarizer 1 is connected with the upper surface of upper substrate 2, in bottom, the upper surface of lower polaroid 9 is connected with the lower surface of infrabasal plate 8, other composition is between upper substrate 2 and infrabasal plate 8, wherein the upper surface of infrabasal plate 8 makes bar shaped Common electrode 7, equidistant arrangement, cover a layer insulating 6 above, insulation course 6 carries out pressing process, protrusion 10 is positioned at directly over Common electrode 7, one Pixel electrode 3 and the 2nd Pixel electrode 4 are positioned at above insulation course 6 and protrusion 10, finedraw 5 is there is in the one Pixel electrode 3 or the 2nd Pixel electrode 4 between the top and low side of protrusion, one Pixel electrode 3 and the 2nd Pixel electrode 4 additive polarity opposite potential, blue phase liquid crystal is filled in the space between upper substrate and infrabasal plate,
Described upper substrate 2 is 12 μm with the spacing of infrabasal plate 8.
Protrusion is transparent silicon nitride or earth silicon material, and its section shape is wide 8 μm, the triangle of high 4 μm, and plan view shape is rectangle, and length equals the length of pixel electrode, and often the spacing of row protrusion is 17 μm.
Described finedraw 5 is realized by photoetching process, and its vertical view is rectangle, each Pixel electrode etches respectively two finedraws 5, the electrode integral width of outer ring is 10 μm, the electrode strip width of outer ring is 1 μm, and middle electrode strip is 3 μm, and finedraw width is 2.5 μm.
The electrode of a described Pixel electrode 3, the 2nd Pixel electrode 4 and Common electrode 7 is transparency conductive electrode, material is indium tin oxide material or other transparent conductive material, thickness is all 100nm, electrode width and length are 10 μm and 40 μm, and a Pixel electrode 3 and the 2nd Pixel electrode 4 spacing are 15 μm.
Described insulating layer material is silicon nitride or earth silicon material, and thickness is 100-200nm.
The glass substrate that described substrate uses for Thin Film Transistor-LCD.
The polaroid that described polaroid uses for Thin Film Transistor-LCD, model is G1220DU, and its orientation angles is positive and negative 45 degree (and the angles between the long limit of electrode).
Cole's constant K=12.68nmV of described blue phase liquid crystal
-2, light wavelength lambda=550nm.
A described Pixel electrode, the 2nd Pixel electrode and Common electrode form memory capacitance.
The V-T curve (transmitance is with the change curve of change in voltage) of the present embodiment and existing IPS electrode and projected electrode as shown in Figure 4, the present embodiment shape electrode transmitance is 0.223, triangular convex shape electrode transmitance is 0.203, and common IPS electrode transmitance is 0.179.The present embodiment electrode compares triangular convex shape electrode and common IPS electrode, and transmitance adds 9.9% and 24.6% respectively.The on-state voltage of the present embodiment reduces 0.5V than the on-state voltage of common IPS electrode.
Method for making content of the present invention is known technology, specifically can with reference to " TFTLCD panel designs and the structure packing technique " shown by Science Press, Tian Minbo leaf peak.
Embodiment 3
(wherein (a) vertical view that is lower substrate surface as shown in Figure 5, b () is sectional view), the structure of the Blue-phase liquid crystal display device of the present embodiment comprises: upper polarizer 1, upper substrate 2, blue phase liquid crystal (BPLC), a Pixel electrode 3, the 2nd Pixel electrode 4, finedraw 5, insulation course 6, Common electrode 7, infrabasal plate 8, lower polaroid 9 and trapezoidal protrusion 10
Wherein:
In top, the lower surface of upper polarizer 1 is connected with the upper surface of upper substrate 2, in bottom, the upper surface of lower polaroid 9 is connected with the lower surface of infrabasal plate 8, other composition is between upper substrate 2 and infrabasal plate 8, wherein the upper surface of infrabasal plate 8 makes bar shaped Common electrode 7, equidistant arrangement, cover a layer insulating 6 above, insulation course 6 carries out pressing process, protrusion 10 is positioned at directly over Common electrode 7, one Pixel electrode 3 and the 2nd Pixel electrode 4 are positioned at above insulation course 6 and protrusion 10, finedraw 5 is there is in the one Pixel electrode 3 or the 2nd Pixel electrode 4 between the top and low side of protrusion, one Pixel electrode 3 and the 2nd Pixel electrode 4 additive polarity opposite potential, blue phase liquid crystal is filled in the space between upper substrate and infrabasal plate,
Described upper substrate 2 is 12 μm with the spacing of infrabasal plate 8.
Protrusion be transparent silicon nitride or earth silicon material, its section shape is lower wide 8 μm, upper wide be 3 μm, high 4 μm trapezoidal, plan view shape is rectangle, and length equals the length of pixel electrode, and often the spacing of row protrusion is 15 μm.
Described finedraw 5 is realized by photoetching process, and its vertical view is rectangle, each Pixel electrode etches respectively two finedraws 5, the electrode integral width of outer ring is 10 μm, outer ring electrode strip width is 1 μm, and middle electrode strip is 3 μm, and finedraw width is 2.5 μm.
The electrode of a described Pixel electrode 3, the 2nd Pixel electrode 4 and Common electrode 7 is transparency conductive electrode, material is indium tin oxide material or other transparent conductive material, thickness is all 100nm, electrode width and length are 10 μm and 40 μm, and a Pixel electrode 3 and the 2nd Pixel electrode 4 spacing are 15 μm.
Described insulating layer material is silicon nitride or earth silicon material, and thickness is 100nm.
The glass substrate that described substrate uses for Thin Film Transistor-LCD.
The polaroid that described polaroid uses for Thin Film Transistor-LCD, model is G1220DU, and its orientation angles is positive and negative 45 degree (and the angles between the long limit of electrode).
Cole's constant K=12.68nmV of described blue phase liquid crystal
-2, light wavelength lambda=550nm.
A described Pixel electrode, the 2nd Pixel electrode and Common electrode form memory capacitance.
The V-T curve (transmitance is with the change curve of change in voltage) of the present embodiment and existing IPS electrode and projected electrode as shown in Figure 6, the present embodiment shape electrode transmitance is 0.219, trapezoidal convex shape electrode transmitance is 0.207, and common IPS electrode transmitance is 0.179.The present embodiment electrode compares trapezoidal convex shape electrode and common IPS electrode, and transmitance adds 5.8% and 22.3% respectively.The on-state voltage of the present embodiment reduces 1.0V than the on-state voltage of common IPS electrode.
Method for making content of the present invention is known technology, specifically can with reference to " TFTLCD panel designs and the structure packing technique " shown by Science Press, Tian Minbo leaf peak.
Embodiment 4
(wherein (a) vertical view that is lower substrate surface as shown in Figure 7, b () is sectional view), the present embodiment comprises: upper polarizer 1, upper substrate 2, blue phase liquid crystal (BPLC), one Pixel electrode 3, 2nd Pixel electrode 4, finedraw 5, insulation course 6, Common electrode 7, infrabasal plate 8, lower polaroid 9 and triangular hill thing 10, wherein: the lower surface of upper polarizer 1 is connected with the upper surface of upper substrate 2, the upper surface of lower polaroid 9 is connected with the lower surface of infrabasal plate 8, Common electrode 7 is positioned at infrabasal plate upper surface, equidistant arrangement, cover a layer insulating 6 above, insulation course 6 carries out pressing process.Protrusion 10 is positioned on Common electrode, and Pixel electrode is positioned at the superiors, and pixel electrode forms " it " shape.
Described upper substrate 2 is 12 μm with the spacing of infrabasal plate 8.
Described finedraw 5 is realized by photoetching process, and its vertical view is rectangle, each Pixel electrode etches respectively two finedraws 5, and the electrode integral width of outer ring is 10 μm, and electrode strip width is 1 μm, and middle electrode strip is 3 μm, and finedraw width is 2.5 μm.
The electrode of a described Pixel electrode 3, the 2nd Pixel electrode 4 and Common electrode 7 is transparency conductive electrode, material is indium tin oxide material or other transparent conductive material, thickness is all 100nm, electrode width and length are 10 μm and 40 μm, and a Pixel electrode 3 and the 2nd Pixel electrode 4 spacing are 15 μm.
Described insulating layer material is silicon nitride or earth silicon material, and thickness is 100nm.
The glass substrate that described substrate uses for Thin Film Transistor-LCD.
The polaroid that described polaroid uses for Thin Film Transistor-LCD, model is G1220DU, and its orientation angles is positive and negative 45 degree (and the angles between the long limit of electrode).
Cole's constant K=12.68nmV of described blue phase liquid crystal
-2, light wavelength lambda=550nm.
A described Pixel electrode, the 2nd Pixel electrode and Common electrode form memory capacitance.
The shape that described Pixel electrode, Common electrode and protrusion are designed to.
Protrusion be transparent silicon nitride or earth silicon material, its section shape is wide 8 μm, the triangle of high 4 μm, and plan view shape is the zigzag conformed to pixel electrode figure, and length equals the length of pixel electrode, and often the spacing of row protrusion is 17 μm.
The V-T curve (transmitance is with the change curve of change in voltage) of the present embodiment and existing IPS electrode and projected electrode as shown in Figure 8, the electrode transmitance of the shape triangular hill band slit of the present embodiment is 0.146, shape triangular convex shape electrode transmitance be 0.133, shape common IPS electrode transmitance be 0.12.The shape triangular-shaped electrodes compared of the electrode of shape triangular hill band slit and the common IPS electrode of shape, transmitance adds 9.8% and 21.7% respectively.The on-state voltage of the present embodiment reduces 1.0V than the on-state voltage of common IPS electrode.
Method for making content of the present invention is known technology, specifically can with reference to " TFTLCD panel designs and the structure packing technique " shown by Science Press, Tian Minbo leaf peak.
Each embodiment does not all consider the impact of memory capacitance area on transmitance in calculating above, consider memory capacitance area, the transmitance of various embodiments of the present invention will be larger, the contrast of memory capacitance area as shown in Figure 9, a () is Traditional IP S structure, b () is the present embodiment, pixel transmittance scope is rectangles encompass area.
Claims (6)
1. a Blue-phase liquid crystal display device, is characterized by this device and comprises: upper polarizer, upper substrate, center section, infrabasal plate and lower polaroid;
Its position is followed successively by lower polaroid, infrabasal plate, center section, upper substrate and upper polarizer according to incident ray from the bottom to top by order; Center section consist of blue phase liquid crystal (BPLC), a Pixel electrode, the 2nd Pixel electrode, finedraw, insulation course, Common electrode and protrusion;
Center section wherein between upper substrate and infrabasal plate is that in following two, distribution mode is arbitrary:
Distribution mode one: on the upper surface of infrabasal plate, uniform intervals is distributed with protrusion, Common electrode covers on protrusion, insulation course covers on Common electrode and infrabasal plate, one Pixel electrode hands over the 2nd Pixel electrode the insulating layer covered mutually above evenly spaced protrusion, there is finedraw between top on protrusion of a Pixel electrode or the 2nd Pixel electrode and bottom; One Pixel electrode and the 2nd Pixel electrode additive polarity opposite potential, blue phase liquid crystal is filled in the space between upper substrate and infrabasal plate;
Or, distribution mode two: the upper surface of infrabasal plate is equidistantly arrange bar shaped Common electrode, a layer insulating is covered above the blank parts of infrabasal plate and Common electrode, insulation course carries out pressing process, protrusion is positioned at directly over Common electrode, the section-bottom width of protrusion is less than Common electrode, one Pixel electrode and the 2nd Pixel electrode are positioned at above insulation course and protrusion, finedraw is there is in the one Pixel electrode or the 2nd Pixel electrode between the top and low side of protrusion, one Pixel electrode and the 2nd Pixel electrode additive polarity opposite potential, blue phase liquid crystal is filled in the space between upper substrate and infrabasal plate.
2. Blue-phase liquid crystal display device as claimed in claim 1, it is characterized by described protrusion lateral cross section shape is triangle or trapezoidal, and longitudinal projection's shape is rectangle or one-tenth " it " shape, and be highly the half of liquid crystal thickness, scope is: 2-10 μm.
3. Blue-phase liquid crystal display device as claimed in claim 1, it is characterized by described finedraw is obtained by etching ITO electrode, and the width of finedraw is at 2-5 μm, and the width of the thin electrode of every bar is 1-5 μm.
4. Blue-phase liquid crystal display device as claimed in claim 1, the thickness of electrode scope that it is characterized by described Pixel electrode and Common electrode is: 20nm-250nm.
5. Blue-phase liquid crystal display device as claimed in claim 1, is characterized by the scope of described protrusion spacing: 5-20 μm.
6. Blue-phase liquid crystal display device as claimed in claim 1, is characterized by described thickness of liquid crystal layer scope: 5-20 μm.
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| CN103226269B (en) * | 2013-04-28 | 2015-07-15 | 京东方科技集团股份有限公司 | Liquid crystal display panel, display device and electronic device |
| CN104765207B (en) * | 2015-01-20 | 2018-05-25 | 深圳市华星光电技术有限公司 | Dot structure and the liquid crystal display with the dot structure |
| CN104698630B (en) * | 2015-03-30 | 2017-12-08 | 合肥京东方光电科技有限公司 | Array base palte and display device |
| CN105182651B (en) * | 2015-08-03 | 2018-05-11 | 武汉华星光电技术有限公司 | Blue phase liquid crystal display module, blue phase liquid crystal display and preparation method thereof |
| CN105093720B (en) * | 2015-08-03 | 2017-12-08 | 武汉华星光电技术有限公司 | Blue phase liquid crystal display module, blue phase liquid crystal display and preparation method thereof |
| CN105093764B (en) * | 2015-08-07 | 2017-12-08 | 武汉华星光电技术有限公司 | Half Transflective blue phase liquid crystal display and its liquid crystal display die set |
| CN105068338B (en) * | 2015-08-28 | 2018-01-09 | 武汉华星光电技术有限公司 | Blue phase liquid crystal display module, blue phase liquid crystal display and preparation method thereof |
| TWI657299B (en) * | 2018-05-31 | 2019-04-21 | 友達光電股份有限公司 | Pixel structure and display device |
| TWI669557B (en) * | 2018-05-31 | 2019-08-21 | 友達光電股份有限公司 | Pixel structure and display device |
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