CN103018976B - Blue-phase liquid crystal display device - Google Patents
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Abstract
本发明为一种蓝相液晶显示器装置,其结构包括:上偏振片、上基板、中间部分、下基板和下偏振片;其位置按照入射光线通过顺序由下至上依次为下偏振片、下基板、中间部分、上基板和上偏振片;中间部分的组成为蓝相液晶(BPLC)、第一Pixel电极、第二Pixel电极、细缝,绝缘层、Common电极和凸起物。本发明通过引入细缝结构和底面Common电极,通过Pixel电极与Common电极形成的边缘场,有效地增加电极上方的光透过率,从而有效的增加了蓝相液晶显示器的光利用率。同时,可以将Pixel电极与其下方的Common电极作为存储电容使用,减少单独存储电容的制作,提高了蓝相液晶显示器的实际开口率(透光面积)。
The present invention is a kind of blue phase liquid crystal display device, and its structure comprises: upper polarizing plate, upper substrate, middle part, lower substrate and lower polarizing plate; Its position is lower polarizing plate, lower substrate successively according to the sequence of incident light passing through from bottom to top , a middle part, an upper substrate and an upper polarizer; the middle part is composed of a blue phase liquid crystal (BPLC), a first Pixel electrode, a second Pixel electrode, a slit, an insulating layer, a Common electrode and a protrusion. The present invention effectively increases the light transmittance above the electrode by introducing the slit structure and the common electrode on the bottom surface through the fringe field formed by the pixel electrode and the common electrode, thereby effectively increasing the light utilization rate of the blue-phase liquid crystal display. At the same time, the Pixel electrode and the Common electrode below it can be used as storage capacitors, reducing the production of separate storage capacitors and increasing the actual aperture ratio (transmitting area) of the blue-phase liquid crystal display.
Description
技术领域technical field
本发明设计的是一种液晶显示技术领域的装置,具体是一种增大蓝相液晶(BPLC)显示器透过率的装置。The invention designs a device in the technical field of liquid crystal display, in particular a device for increasing the transmittance of a blue-phase liquid crystal (BPLC) display.
背景技术Background technique
蓝相液晶显示器具有毫秒以下的响应时间、视角宽和对比度高的特点,并且在制作过程中不需要取向层,也不需要对液晶层厚度做很严格的限制,制作成本低,制造工艺更简单,从而被认为最有潜力成为下一代液晶显示器。传统蓝相液晶显示器是以共面转换液晶显示器的驱动电极形式来进行驱动的,需要制作存储电容来获得高的电压保持率,由于在电极和制作存储电容的区域只有少量的光透过,并且驱动电压也比较高。The blue phase liquid crystal display has the characteristics of response time below milliseconds, wide viewing angle and high contrast ratio, and does not require an alignment layer in the production process, nor does it need to impose strict restrictions on the thickness of the liquid crystal layer, the production cost is low, and the manufacturing process is simpler. , which is considered to have the most potential to become the next generation of liquid crystal displays. The traditional blue-phase liquid crystal display is driven in the form of the driving electrodes of the coplanar switching liquid crystal display. It is necessary to make a storage capacitor to obtain a high voltage retention rate, because only a small amount of light passes through the electrode and the area where the storage capacitor is made, and The driving voltage is also relatively high.
采用带有细缝的像素电极和在像素电极下方设置公共电极,形成电极上方的透光和像素电极下的存储电容,增大了透光区域,提高了透光率,但是驱动电压,相比传统共面转换的驱动电极结构增大了。为了降低驱动电压,人们曾提出采用凸起物和凸起的电极结构来降低驱动电压,并通过优化凸起物形状,获得了较高的透过率和较低的驱动电压,但是由于整个像素还是需要制作额外的存储电容来保持电压,所以整体的透光率不高。The pixel electrode with slits and the common electrode are arranged under the pixel electrode to form the light transmission above the electrode and the storage capacitor under the pixel electrode, which increases the light transmission area and improves the light transmittance, but the driving voltage is lower than that of the pixel electrode. The driving electrode structure of conventional coplanar switching is enlarged. In order to reduce the driving voltage, it has been proposed to use protrusions and raised electrode structures to reduce the driving voltage, and by optimizing the shape of the protrusions, a higher transmittance and a lower driving voltage have been obtained, but because the entire pixel It is still necessary to make an additional storage capacitor to maintain the voltage, so the overall light transmittance is not high.
发明内容Contents of the invention
本发明的目的在于克服现有技术中存在的缺点,提供一种简单有效的提高光利用率的装置,同时驱动电压与传统共面转换电极结构的驱动电压差不多。本发明在凸起物上设置带细缝结构的Pixel电极及其下方的Common电极,通过调整细缝的宽度和条数,使其在凸起物上或者凸起物斜边上产生边缘场,有效的提高蓝相液晶显示器的光利用率,因为Pixel电极与Common电极构成存储电容,减少单独制作存储电容的部分,增大了液晶显示器的实际开口率。The purpose of the present invention is to overcome the disadvantages in the prior art, and provide a simple and effective device for improving light utilization, and the driving voltage is similar to that of the traditional coplanar switching electrode structure. In the present invention, a pixel electrode with a slit structure and a common electrode below it are arranged on the protrusion, and by adjusting the width and number of the slits, a fringe field is generated on the protrusion or on the hypotenuse of the protrusion, Effectively improve the light utilization rate of the blue-phase liquid crystal display, because the pixel electrode and the common electrode form a storage capacitor, reduce the part of the storage capacitor separately, and increase the actual aperture ratio of the liquid crystal display.
本发明的技术方案为:Technical scheme of the present invention is:
一种蓝相液晶显示器装置,其结构包括:上偏振片、上基板、中间部分、下基板和下偏振片;A blue-phase liquid crystal display device, its structure includes: an upper polarizer, an upper substrate, a middle part, a lower substrate and a lower polarizer;
其位置按照入射光线通过顺序由下至上依次为下偏振片、下基板、中间部分、上基板和上偏振片;中间部分的组成为蓝相液晶(BPLC)、第一Pixel电极、第二Pixel电极、细缝,绝缘层、Common电极和凸起物,Its position is the lower polarizer, the lower substrate, the middle part, the upper substrate and the upper polarizer from bottom to top in accordance with the order of incident light; the composition of the middle part is blue phase liquid crystal (BPLC), the first Pixel electrode, and the second Pixel electrode , slits, insulating layers, common electrodes and protrusions,
其中上基板与下基板之间的中间部分为以下两中分布方式任一:The middle part between the upper base plate and the lower base plate is either of the following two distribution methods:
分布方式一:下基板的上表面上均匀间隔分布有凸起物,Common电极覆盖在凸起物上,绝缘层覆盖在Common电极和下基板上,第一Pixel电极与第二Pixel电极交相覆盖在均匀间隔的凸起物上面的绝缘层上面,第一Pixel电极或第二Pixel电极在凸起物上面的顶端与底端之间存在细缝;第一Pixel电极与第二Pixel电极加极性相反电势,蓝相液晶填充在上基板和下基板之间的空隙;Distribution method 1: Protrusions are evenly distributed on the upper surface of the lower substrate, the Common electrode covers the protrusions, the insulating layer covers the Common electrode and the lower substrate, and the first Pixel electrode and the second Pixel electrode intersect and cover On the insulating layer above the evenly spaced protrusions, there is a slit between the top and bottom of the first Pixel electrode or the second Pixel electrode on the protrusion; the first Pixel electrode and the second Pixel electrode are polarized Opposite potential, the blue phase liquid crystal fills the gap between the upper substrate and the lower substrate;
或者,分布方式二:下基板的上表面为等间距排列条形Common电极,下基板的空白部分和Common电极上面覆盖一层绝缘层,绝缘层进行压平处理,凸起物位于Common电极的正上方,凸起物的截面底部宽度小于Common电极,第一Pixel电极3与第二Pixel电极4位于绝缘层6和凸起物10上方,第一Pixel电极3或第二Pixel电极4在凸起物的顶端和低端之间存在细缝5,第一Pixel电极3与第二Pixel电极4加极性相反电势,蓝相液晶填充在上基板和下基板之间的空隙;Or, the second distribution method: the upper surface of the lower substrate is arranged with strip-shaped Common electrodes at equal intervals, and the blank part of the lower substrate and the Common electrodes are covered with an insulating layer, and the insulating layer is flattened, and the protrusions are located on the positive sides of the Common electrodes. Above, the bottom width of the cross-section of the protrusion is smaller than that of the Common electrode, the first Pixel electrode 3 and the second Pixel electrode 4 are located above the insulating layer 6 and the protrusion 10, and the first Pixel electrode 3 or the second Pixel electrode 4 is on the protrusion There is a slit 5 between the top and the bottom of the top, the first Pixel electrode 3 and the second Pixel electrode 4 are applied with opposite polarity potentials, and the blue phase liquid crystal fills the gap between the upper substrate and the lower substrate;
所述凸起物横向截面形状为三角形或梯形,纵向投影形状为矩形或成“之”字状,高度为液晶层厚的一半,范围为:2-10μm;The transverse cross-sectional shape of the protrusion is a triangle or trapezoid, the longitudinal projection shape is a rectangle or a "zigzag" shape, and the height is half of the thickness of the liquid crystal layer, and the range is: 2-10 μm;
所述的细缝是通过刻蚀ITO电极得到,细缝和细电极的宽度范围可根据Pixel电极大小与工艺进行调整,细缝的宽度通常在2-5μm,每条细电极的宽度为1-5μm。The slits are obtained by etching ITO electrodes. The width range of the slits and thin electrodes can be adjusted according to the size and process of Pixel electrodes. The width of the slits is usually 2-5 μm, and the width of each thin electrode is 1- 5 μm.
所述的Pixel电极和Common电极的电极厚度范围是:20nm-250nm。The electrode thickness range of the Pixel electrode and the Common electrode is: 20nm-250nm.
所述凸起物间距的范围是:5-20μm。The range of the distance between the protrusions is 5-20 μm.
所述的液晶层厚度范围:5-20μm。The thickness range of the liquid crystal layer: 5-20 μm.
与现有技术对比,本发明的有益效果是:通过引入细缝结构和底面Common电极,通过Pixel电极与Common电极形成的边缘场,有效地增加电极上方的光透过率,从而有效的增加了蓝相液晶显示器的光利用率。同时,可以将Pixel电极与其下方的Common电极作为存储电容使用,减少单独存储电容的制作,提高了蓝相液晶显示器的实际开口率(透光面积)。Compared with the prior art, the beneficial effect of the present invention is: by introducing the slit structure and the common electrode on the bottom surface, through the fringe field formed by the Pixel electrode and the Common electrode, the light transmittance above the electrode is effectively increased, thereby effectively increasing the Light utilization efficiency of blue phase liquid crystal display. At the same time, the Pixel electrode and the Common electrode below it can be used as storage capacitors, reducing the production of separate storage capacitors and increasing the actual aperture ratio (transmitting area) of the blue-phase liquid crystal display.
通过以下参考附图的详细说明,本发明的其他方面和特征变得明显。但是应该知道,该附图仅仅是为了解释的目的设计,而不是作为本发明涉及范围的设定。Other aspects and features of the present invention will become apparent from the following detailed description with reference to the accompanying drawings. However, it should be understood that the drawings are only designed for the purpose of explanation, rather than setting the scope of the present invention.
附图说明Description of drawings
下面将结合附图,对本发明的具体实施方式进行详细的说明,其中:Below in conjunction with accompanying drawing, specific embodiment of the present invention is described in detail, wherein:
图1是实施例1的结构示意图,(a)为下基板表面的俯视图,(b)为剖面图;Figure 1 is a schematic structural view of Example 1, (a) is a top view of the lower substrate surface, (b) is a cross-sectional view;
图2是实施例1的V-T曲线图,方块线为现有的IPS结构,点线为凸起形电极,三角线为本实施例结构。Fig. 2 is a V-T curve diagram of Embodiment 1, the square line is the existing IPS structure, the dotted line is the raised electrode, and the triangle line is the structure of this embodiment.
图3是实施例2的结构示意图,(a)为俯视图,(b)为剖面图;Figure 3 is a schematic structural view of Embodiment 2, (a) is a top view, (b) is a cross-sectional view;
图4是实施例2的V-T曲线图,方块线为现有的IPS结构,点线为凸起形电极,三角线为本实施例结构。Fig. 4 is a V-T curve diagram of Embodiment 2, the square line is the existing IPS structure, the dotted line is the raised electrode, and the triangle line is the structure of this embodiment.
图5是实施例3的结构示意图,(a)为俯视图,(b)为剖面图;Figure 5 is a schematic structural view of Embodiment 3, (a) is a top view, (b) is a cross-sectional view;
图6是实施例3的V-T曲线图,方块线为现有的IPS结构,点线为凸起形电极,三角线为本实施例结构。Fig. 6 is a V-T curve diagram of Embodiment 3, the square line is the existing IPS structure, the dotted line is the raised electrode, and the triangle line is the structure of this embodiment.
图7是实施例4的结构示意图,(a)为俯视图,(b)为剖面图;Figure 7 is a schematic structural view of Embodiment 4, (a) is a top view, (b) is a cross-sectional view;
图8是实施例4的V-T曲线图,方块线为现有的IPS结构,点线为凸起形电极,三角线为本实施例结构。Fig. 8 is a V-T curve diagram of Embodiment 4, the square line is the existing IPS structure, the dotted line is the raised electrode, and the triangle line is the structure of this embodiment.
图9是传统IPS结构和本实施例结构中的透光区域图。FIG. 9 is a diagram of the light-transmitting area in the conventional IPS structure and the structure of this embodiment.
具体实施方式detailed description
以下结合附图对本发明的实施进一步描述:本实施例在以本发明技术方案为前提下进行实施,给出了详细的实施方式和具体的操作过程,但本发明的保护范围不限于下属的实施例。The implementation of the present invention will be further described below in conjunction with the accompanying drawings: the present embodiment is implemented under the premise of the technical solution of the present invention, and detailed implementation methods and specific operating procedures are provided, but the protection scope of the present invention is not limited to the implementation of subordinates example.
实施例1Example 1
如图1所示(其中(a)为下基板表面的俯视图,(b)为剖面图),本实施例的蓝相液晶显示器装置的结构包括:上偏振片1、上基板2、蓝相液晶(BPLC)、第一Pixel电极3、第二Pixel电极4、细缝5,绝缘层6、Common电极7、下基板8、下偏振片9和三角形凸起物10,As shown in Figure 1 (where (a) is a top view of the surface of the lower substrate, (b) is a cross-sectional view), the structure of the blue-phase liquid crystal display device of this embodiment includes: an upper polarizer 1, an upper substrate 2, a blue-phase liquid crystal (BPLC), the first Pixel electrode 3, the second Pixel electrode 4, the slit 5, the insulating layer 6, the Common electrode 7, the lower substrate 8, the lower polarizer 9 and the triangular protrusion 10,
其中:in:
上部中上偏振片1的下表面与上基板2的上表面相连,下部中下偏振片9的上表面与下基板8的下表面相连,其它组成在上基板2与下基板8之间,其中下基板8的上表面上均匀间隔分布有凸起物10,Common电极7覆盖在凸起物10上,绝缘层6覆盖在Common电极7和下基板上,第一Pixel电极3与第二Pixel电极4交相覆盖在均匀间隔的凸起物10上面的绝缘层6上面,第一Pixel电极3或第二Pixel电极4在凸起物上面的顶端与底端之间存在细缝5;第一Pixel电极3与第二Pixel电极4加极性相反电势,蓝相液晶填充在上基板和下基板之间的空隙;The lower surface of the upper middle and upper polarizer 1 is connected to the upper surface of the upper substrate 2, the upper surface of the lower middle and lower polarizer 9 is connected to the lower surface of the lower substrate 8, and other components are between the upper substrate 2 and the lower substrate 8, wherein Protrusions 10 are uniformly distributed on the upper surface of the lower substrate 8, the Common electrode 7 covers the protrusions 10, the insulating layer 6 covers the Common electrode 7 and the lower substrate, and the first Pixel electrode 3 and the second Pixel electrode 4 intersecting and covering the insulating layer 6 above the evenly spaced bumps 10, the first Pixel electrode 3 or the second Pixel electrode 4 has a slit 5 between the top and bottom of the bumps; the first Pixel Electrode 3 and the second Pixel electrode 4 apply a potential of opposite polarity, and the blue phase liquid crystal fills the gap between the upper substrate and the lower substrate;
所述上基板2与下基板8的间距为12μm。The distance between the upper substrate 2 and the lower substrate 8 is 12 μm.
凸起物为透明的氮化硅或者二氧化硅材料,其横向剖面形状为宽8μm,高4μm的三角形,纵向俯视形状为矩形,长度等于像素电极的长度,每列凸起物的间距为15μm。The protrusions are made of transparent silicon nitride or silicon dioxide material. The cross-sectional shape is a triangle with a width of 8 μm and a height of 4 μm. The shape of the vertical top view is a rectangle, and the length is equal to the length of the pixel electrode. The spacing of each column of protrusions is 15 μm. .
所述细缝5是通过光刻工艺实现的,其俯视图为矩形,每个Pixel电极上分别刻蚀两条细缝5,外圈的电极整体宽度为10μm,外圈电极条宽度为1μm,中间的电极条为3μm,狭缝的宽度为2.5μm。The thin slit 5 is realized by photolithography process, and its plan view is rectangular. Two thin slits 5 are respectively etched on each Pixel electrode. The overall width of the outer electrode is 10 μm, and the width of the outer electrode strip is 1 μm. The electrode strips are 3 μm and the width of the slit is 2.5 μm.
所述的第一Pixel电极3、第二Pixel电极4和Common电极7的电极为透明导电电极,材料为氧化铟锡材料或者其它透明导电材料,厚度为100nm,带有狭缝的第一Pixel电极3与第二Pixel电极4宽度和长度为10μm和40μm,第一Pixel电极3与第二Pixel电极4间距为15μm。The electrodes of the first Pixel electrode 3, the second Pixel electrode 4 and the Common electrode 7 are transparent conductive electrodes made of indium tin oxide material or other transparent conductive materials with a thickness of 100 nm, and the first Pixel electrodes with slits 3 and the second Pixel electrode 4 have a width and length of 10 μm and 40 μm, and a distance between the first Pixel electrode 3 and the second Pixel electrode 4 is 15 μm.
所述的绝缘层材料为氮化硅或者二氧化硅材料,厚度为100nm。The material of the insulating layer is silicon nitride or silicon dioxide, with a thickness of 100nm.
所述的基板为薄膜晶体管液晶显示器所使用的玻璃基板。The substrate is a glass substrate used in a thin film transistor liquid crystal display.
所述的偏振片为薄膜晶体管液晶显示器所使用的偏振片,型号为G1220DU,其方位角度为正负45度(与电极长边之间的夹角)。The polarizer is a polarizer used in thin film transistor liquid crystal displays, the model is G1220DU, and its azimuth angle is plus or minus 45 degrees (the included angle with the long side of the electrode).
所述的蓝相液晶的科尔常数K=12.68nmV-2,光波长λ=550nm。The Cole constant of the blue phase liquid crystal is K=12.68nmV -2 , and the light wavelength λ=550nm.
所述的第一Pixel电极3、第二Pixel电极4与Common电极7构成存储电容。The first Pixel electrode 3 , the second Pixel electrode 4 and the Common electrode 7 constitute a storage capacitor.
本实施例与现有的IPS电极和凸起电极的V-T曲线(透过率随电压变化的变化曲线)如图2所示,本实施例形状电极透过率为0.237,三角形凸起形状电极透过率为0.203,普通IPS电极透过率为0.179。本实施例电极相比三角形凸起形状电极和普通IPS电极,透过率分别增加了16.7%和32.4%。本实施例的开态电压比普通IPS电极的开态电压大2.5V,通过改变电极间隙,很容易将驱动电压降下来。The V-T curve (transmittance change curve with voltage variation) of this embodiment and the existing IPS electrode and protruding electrode is shown in Figure 2. The transmittance is 0.203, and the transmittance of ordinary IPS electrodes is 0.179. The transmittance of the electrode in this embodiment is increased by 16.7% and 32.4% respectively compared with the triangular convex electrode and the common IPS electrode. The on-state voltage of this embodiment is 2.5V higher than that of common IPS electrodes, and the driving voltage can be easily lowered by changing the electrode gap.
本发明的制作方法内容为公知技术,具体可以参照由科学出版社、田民波叶峰著的《TFTLCD面板设计与构装技术》。The content of the manufacturing method of the present invention is a known technology, and for details, reference may be made to "TFLCD Panel Design and Construction Technology" written by Science Publishing House and Tian Minbo Yefeng.
实施例2Example 2
如图3所示(其中(a)为下基板表面的俯视图,(b)为剖面图),本实施例的蓝相液晶显示器装置的结构包括:上偏振片1、上基板2、蓝相液晶(BPLC)、第一Pixel电极3、第二Pixel电极4、细缝5,绝缘层6、Common电极7、下基板8、下偏振片9和三角形凸起物10,As shown in Figure 3 (where (a) is a top view of the surface of the lower substrate, and (b) is a cross-sectional view), the structure of the blue-phase liquid crystal display device of this embodiment includes: an upper polarizer 1, an upper substrate 2, a blue-phase liquid crystal (BPLC), the first Pixel electrode 3, the second Pixel electrode 4, the slit 5, the insulating layer 6, the Common electrode 7, the lower substrate 8, the lower polarizer 9 and the triangular protrusion 10,
其中:in:
上部中上偏振片1的下表面与上基板2的上表面相连,下部中下偏振片9的上表面与下基板8的下表面相连,其它组成在上基板2与下基板8之间,其中下基板8的上表面制作条形Common电极7,等间距排列,上面覆盖一层绝缘层6,绝缘层6进行压平处理,凸起物10位于Common电极7的正上方,第一Pixel电极3与第二Pixel电极4位于绝缘层6和凸起物10上方,第一Pixel电极3或第二Pixel电极4在凸起物的顶端和低端之间存在细缝5,第一Pixel电极3与第二Pixel电极4加极性相反电势,蓝相液晶填充在上基板和下基板之间的空隙;The lower surface of the upper middle and upper polarizer 1 is connected to the upper surface of the upper substrate 2, the upper surface of the lower middle and lower polarizer 9 is connected to the lower surface of the lower substrate 8, and other components are between the upper substrate 2 and the lower substrate 8, wherein Strip-shaped Common electrodes 7 are made on the upper surface of the lower substrate 8, arranged at equal intervals, covered with an insulating layer 6, and the insulating layer 6 is flattened. The protrusion 10 is located directly above the Common electrode 7, and the first Pixel electrode 3 The second Pixel electrode 4 is located above the insulating layer 6 and the protrusion 10, the first Pixel electrode 3 or the second Pixel electrode 4 has a slit 5 between the top and the bottom of the protrusion, and the first Pixel electrode 3 and the The second Pixel electrode 4 is applied with a potential of opposite polarity, and the blue phase liquid crystal fills the gap between the upper substrate and the lower substrate;
所述上基板2与下基板8的间距为12μm。The distance between the upper substrate 2 and the lower substrate 8 is 12 μm.
凸起物为透明的氮化硅或者二氧化硅材料,其剖面形状为宽8μm,高4μm的三角形,俯视形状为矩形,长度等于像素电极的长度,每列凸起物的间距为17μm。The protrusions are made of transparent silicon nitride or silicon dioxide material, and their cross-sectional shape is a triangle with a width of 8 μm and a height of 4 μm. The top view shape is a rectangle, and the length is equal to the length of the pixel electrode. The spacing of each column of protrusions is 17 μm.
所述细缝5是通过光刻工艺实现的,其俯视图为矩形,每个Pixel电极上分别刻蚀两条细缝5,外圈的电极整体宽度为10μm,外圈的电极条宽度为1μm,中间的电极条为3μm,细缝宽度为2.5μm。The thin slits 5 are realized by a photolithography process, and their top view is rectangular. Two thin slits 5 are respectively etched on each Pixel electrode. The overall width of the electrodes on the outer ring is 10 μm, and the width of the electrode strips on the outer ring is 1 μm. The electrode strip in the middle is 3 μm, and the slit width is 2.5 μm.
所述的第一Pixel电极3、第二Pixel电极4和Common电极7的电极为透明导电电极,材料为氧化铟锡材料或者其它透明导电材料,厚度都是100nm,电极宽度和长度为10μm和40μm,第一Pixel电极3与第二Pixel电极4间距为15μm。The electrodes of the first Pixel electrode 3, the second Pixel electrode 4 and the Common electrode 7 are transparent conductive electrodes, the material is indium tin oxide material or other transparent conductive materials, the thickness is 100nm, and the electrode width and length are 10 μm and 40 μm , the distance between the first Pixel electrode 3 and the second Pixel electrode 4 is 15 μm.
所述的绝缘层材料为氮化硅或者二氧化硅材料,厚度为100-200nm。The material of the insulating layer is silicon nitride or silicon dioxide, and the thickness is 100-200nm.
所述的基板为薄膜晶体管液晶显示器所使用的玻璃基板。The substrate is a glass substrate used in a thin film transistor liquid crystal display.
所述的偏振片为薄膜晶体管液晶显示器所使用的偏振片,型号为G1220DU,其方位角度为正负45度(与电极长边之间的夹角)。The polarizer is a polarizer used in thin film transistor liquid crystal displays, the model is G1220DU, and its azimuth angle is plus or minus 45 degrees (the included angle with the long side of the electrode).
所述的蓝相液晶的科尔常数K=12.68nmV-2,光波长λ=550nm。The Cole constant of the blue phase liquid crystal is K=12.68nmV -2 , and the light wavelength λ=550nm.
所述的第一Pixel电极、第二Pixel电极与Common电极构成存储电容。The first Pixel electrode, the second Pixel electrode and the Common electrode constitute a storage capacitor.
本实施例与现有的IPS电极和凸起电极的V-T曲线(透过率随电压变化的变化曲线)如图4所示,本实施例形状电极透过率为0.223,三角形凸起形状电极透过率为0.203,普通IPS电极透过率为0.179。本实施例电极相比三角形凸起形状电极和普通IPS电极,透过率分别增加了9.9%和24.6%。本实施例的开态电压比普通IPS电极的开态电压减小了0.5V。The V-T curve (transmittance change curve with voltage variation) of this embodiment and the existing IPS electrode and protruding electrode is shown in Figure 4. The transmittance is 0.203, and the transmittance of ordinary IPS electrodes is 0.179. The transmittance of the electrode in this embodiment is increased by 9.9% and 24.6% respectively compared with the triangular convex electrode and the common IPS electrode. The on-state voltage of this embodiment is 0.5V lower than that of common IPS electrodes.
本发明的制作方法内容为公知技术,具体可以参照由科学出版社、田民波叶峰著的《TFTLCD面板设计与构装技术》。The content of the manufacturing method of the present invention is a known technology, and for details, reference may be made to "TFLCD Panel Design and Construction Technology" written by Science Publishing House and Tian Minbo Yefeng.
实施例3Example 3
如图5所示(其中(a)为下基板表面的俯视图,(b)为剖面图),本实施例的蓝相液晶显示器装置的结构包括:上偏振片1、上基板2、蓝相液晶(BPLC)、第一Pixel电极3、第二Pixel电极4、细缝5,绝缘层6、Common电极7、下基板8、下偏振片9和梯形凸起物10,As shown in Figure 5 (where (a) is a top view of the surface of the lower substrate, (b) is a cross-sectional view), the structure of the blue-phase liquid crystal display device of this embodiment includes: an upper polarizer 1, an upper substrate 2, a blue-phase liquid crystal (BPLC), the first Pixel electrode 3, the second Pixel electrode 4, the slit 5, the insulating layer 6, the Common electrode 7, the lower substrate 8, the lower polarizer 9 and the trapezoidal protrusion 10,
其中:in:
上部中上偏振片1的下表面与上基板2的上表面相连,下部中下偏振片9的上表面与下基板8的下表面相连,其它组成在上基板2与下基板8之间,其中下基板8的上表面制作条形Common电极7,等间距排列,上面覆盖一层绝缘层6,绝缘层6进行压平处理,凸起物10位于Common电极7的正上方,第一Pixel电极3与第二Pixel电极4位于绝缘层6和凸起物10上方,第一Pixel电极3或第二Pixel电极4在凸起物的顶端和低端之间存在细缝5,第一Pixel电极3与第二Pixel电极4加极性相反电势,蓝相液晶填充在上基板和下基板之间的空隙;The lower surface of the upper middle and upper polarizer 1 is connected to the upper surface of the upper substrate 2, the upper surface of the lower middle and lower polarizer 9 is connected to the lower surface of the lower substrate 8, and other components are between the upper substrate 2 and the lower substrate 8, wherein Strip-shaped Common electrodes 7 are made on the upper surface of the lower substrate 8, arranged at equal intervals, covered with an insulating layer 6, and the insulating layer 6 is flattened. The protrusion 10 is located directly above the Common electrode 7, and the first Pixel electrode 3 The second Pixel electrode 4 is located above the insulating layer 6 and the protrusion 10, the first Pixel electrode 3 or the second Pixel electrode 4 has a slit 5 between the top and the bottom of the protrusion, and the first Pixel electrode 3 and the The second Pixel electrode 4 is applied with a potential of opposite polarity, and the blue phase liquid crystal fills the gap between the upper substrate and the lower substrate;
所述上基板2与下基板8的间距为12μm。The distance between the upper substrate 2 and the lower substrate 8 is 12 μm.
凸起物的为透明的氮化硅或者二氧化硅材料,其剖面形状为下宽8μm,上宽为3μm,高4μm的梯形,俯视形状为矩形,长度等于像素电极的长度,每列凸起物的间距为15μm。The protrusion is made of transparent silicon nitride or silicon dioxide material. Its cross-sectional shape is a trapezoid with a lower width of 8 μm, an upper width of 3 μm, and a height of 4 μm. The distance between objects is 15 μm.
所述细缝5是通过光刻工艺实现的,其俯视图为矩形,每个Pixel电极上分别刻蚀两条细缝5,外圈的电极整体宽度为10μm,外圈电极条宽度为1μm,中间的电极条为3μm,细缝宽度为2.5μm。The thin slit 5 is realized by photolithography process, and its plan view is rectangular. Two thin slits 5 are respectively etched on each Pixel electrode. The overall width of the outer electrode is 10 μm, and the width of the outer electrode strip is 1 μm. The electrode strips are 3 μm and the slit width is 2.5 μm.
所述的第一Pixel电极3、第二Pixel电极4和Common电极7的电极为透明导电电极,材料为氧化铟锡材料或者其它透明导电材料,厚度都是100nm,电极宽度和长度为10μm和40μm,第一Pixel电极3与第二Pixel电极4间距为15μm。The electrodes of the first Pixel electrode 3, the second Pixel electrode 4 and the Common electrode 7 are transparent conductive electrodes, the material is indium tin oxide material or other transparent conductive materials, the thickness is 100nm, and the electrode width and length are 10 μm and 40 μm , the distance between the first Pixel electrode 3 and the second Pixel electrode 4 is 15 μm.
所述的绝缘层材料为氮化硅或者二氧化硅材料,厚度为100nm。The material of the insulating layer is silicon nitride or silicon dioxide, with a thickness of 100nm.
所述的基板为薄膜晶体管液晶显示器所使用的玻璃基板。The substrate is a glass substrate used in a thin film transistor liquid crystal display.
所述的偏振片为薄膜晶体管液晶显示器所使用的偏振片,型号为G1220DU,其方位角度为正负45度(与电极长边之间的夹角)。The polarizer is a polarizer used in thin film transistor liquid crystal displays, the model is G1220DU, and its azimuth angle is plus or minus 45 degrees (the included angle with the long side of the electrode).
所述的蓝相液晶的科尔常数K=12.68nmV-2,光波长λ=550nm。The Cole constant of the blue phase liquid crystal is K=12.68nmV -2 , and the light wavelength λ=550nm.
所述的第一Pixel电极、第二Pixel电极与Common电极构成存储电容。The first Pixel electrode, the second Pixel electrode and the Common electrode constitute a storage capacitor.
本实施例与现有的IPS电极和凸起电极的V-T曲线(透过率随电压变化的变化曲线)如图6所示,本实施例形状电极透过率为0.219,梯形凸起形状电极透过率为0.207,普通IPS电极透过率为0.179。本实施例电极相比梯形凸起形状电极和普通IPS电极,透过率分别增加了5.8%和22.3%。本实施例的开态电压比普通IPS电极的开态电压减小了1.0V。The V-T curve (variation curve of transmittance with voltage variation) of this embodiment and the existing IPS electrode and protruding electrode is shown in Figure 6. The transmittance is 0.207, and the transmittance of ordinary IPS electrodes is 0.179. Compared with the trapezoidal protrusion-shaped electrode and the common IPS electrode, the transmittance of the electrode in this embodiment increases by 5.8% and 22.3%, respectively. The on-state voltage of this embodiment is 1.0V lower than that of common IPS electrodes.
本发明的制作方法内容为公知技术,具体可以参照由科学出版社、田民波叶峰著的《TFTLCD面板设计与构装技术》。The content of the manufacturing method of the present invention is a known technology, and for details, reference may be made to "TFLCD Panel Design and Construction Technology" written by Science Publishing House and Tian Minbo Yefeng.
实施例4Example 4
如图7所示(其中(a)为下基板表面的俯视图,(b)为剖面图),本实施例包括:上偏振片1、上基板2、蓝相液晶(BPLC)、第一Pixel电极3、第二Pixel电极4、细缝5,绝缘层6、Common电极7、下基板8、下偏振片9和三角形凸起物10,其中:上偏振片1的下表面与上基板2的上表面相连,下偏振片9的上表面与下基板8的下表面相连,Common电极7位于下基板上表面,等间距排列,上面覆盖一层绝缘层6,绝缘层6进行压平处理。凸起物10位于Common电极上,Pixel电极位于最上层,像素电极形成“之”字状。As shown in Figure 7 (where (a) is a top view of the surface of the lower substrate, (b) is a cross-sectional view), this embodiment includes: an upper polarizer 1, an upper substrate 2, a blue phase liquid crystal (BPLC), and a first Pixel electrode 3. The second Pixel electrode 4, the slit 5, the insulating layer 6, the Common electrode 7, the lower substrate 8, the lower polarizer 9 and the triangular protrusion 10, wherein: the lower surface of the upper polarizer 1 and the upper surface of the upper substrate 2 The surfaces are connected, the upper surface of the lower polarizer 9 is connected to the lower surface of the lower substrate 8, the common electrodes 7 are located on the upper surface of the lower substrate, arranged at equal intervals, covered with an insulating layer 6, and the insulating layer 6 is flattened. The protrusion 10 is located on the Common electrode, the Pixel electrode is located on the uppermost layer, and the pixel electrode forms a zigzag shape.
所述上基板2与下基板8的间距为12μm。The distance between the upper substrate 2 and the lower substrate 8 is 12 μm.
所述细缝5是通过光刻工艺实现的,其俯视图为矩形,每个Pixel电极上分别刻蚀两条细缝5,外圈的电极整体宽度为10μm,电极条宽度为1μm,中间的电极条为3μm,细缝宽度为2.5μm。The thin slits 5 are realized by a photolithography process, and its top view is rectangular. Two thin slits 5 are respectively etched on each Pixel electrode. The overall width of the electrodes on the outer ring is 10 μm, and the width of the electrode strips is 1 μm. The bar is 3 μm, and the slit width is 2.5 μm.
所述的第一Pixel电极3、第二Pixel电极4和Common电极7的电极为透明导电电极,材料为氧化铟锡材料或者其它透明导电材料,厚度都是100nm,电极宽度和长度为10μm和40μm,第一Pixel电极3与第二Pixel电极4间距为15μm。The electrodes of the first Pixel electrode 3, the second Pixel electrode 4 and the Common electrode 7 are transparent conductive electrodes, the material is indium tin oxide material or other transparent conductive materials, the thickness is 100nm, and the electrode width and length are 10 μm and 40 μm , the distance between the first Pixel electrode 3 and the second Pixel electrode 4 is 15 μm.
所述的绝缘层材料为氮化硅或者二氧化硅材料,厚度为100nm。The material of the insulating layer is silicon nitride or silicon dioxide, with a thickness of 100nm.
所述的基板为薄膜晶体管液晶显示器所使用的玻璃基板。The substrate is a glass substrate used in a thin film transistor liquid crystal display.
所述的偏振片为薄膜晶体管液晶显示器所使用的偏振片,型号为G1220DU,其方位角度为正负45度(与电极长边之间的夹角)。The polarizer is a polarizer used in thin film transistor liquid crystal displays, the model is G1220DU, and its azimuth angle is plus or minus 45 degrees (the included angle with the long side of the electrode).
所述的蓝相液晶的科尔常数K=12.68nmV-2,光波长λ=550nm。The Cole constant of the blue phase liquid crystal is K=12.68nmV -2 , and the light wavelength λ=550nm.
所述的第一Pixel电极、第二Pixel电极与Common电极构成存储电容。The first Pixel electrode, the second Pixel electrode and the Common electrode constitute a storage capacitor.
所述的Pixel电极、Common电极与凸起物设计成之字状。The Pixel electrodes, Common electrodes and protrusions are designed in a zigzag shape.
凸起物的为透明的氮化硅或者二氧化硅材料,其剖面形状为宽8μm,高4μm的三角形,俯视形状为与像素电极图形相符的之字形,长度等于像素电极的长度,每列凸起物的间距为17μm。The protrusion is made of transparent silicon nitride or silicon dioxide material. Its cross-sectional shape is a triangle with a width of 8 μm and a height of 4 μm. The shape of the top view is a zigzag conforming to the pattern of the pixel electrode, and the length is equal to the length of the pixel electrode. The pitch of the bumps was 17 μm.
本实施例与现有的IPS电极和凸起电极的V-T曲线(透过率随电压变化的变化曲线)如图8所示,本实施例之字状三角形凸起带狭缝的电极透过率为0.146,之字状三角形凸起形状电极透过率为0.133,之字状普通IPS电极透过率为0.12。之字状三角形凸起带狭缝的电极相比之字状三角形电极和之字状普通IPS电极,透过率分别增加了9.8%和21.7%。本实施例的开态电压比普通IPS电极的开态电压减小了1.0V。The V-T curve (transmittance change curve with voltage variation) of the present embodiment and the existing IPS electrode and the protruding electrode is as shown in Figure 8, the electrode transmittance of the zigzag triangular protruding band slit of the present embodiment It is 0.146, the transmittance of the zigzag triangular convex shape electrode is 0.133, and the transmittance of the zigzag ordinary IPS electrode is 0.12. Compared with the zigzag triangular electrode and the zigzag ordinary IPS electrode, the transmittance of the electrode with zigzag triangular protrusions and slits increased by 9.8% and 21.7%, respectively. The on-state voltage of this embodiment is 1.0V lower than that of common IPS electrodes.
本发明的制作方法内容为公知技术,具体可以参照由科学出版社、田民波叶峰著的《TFTLCD面板设计与构装技术》。The content of the manufacturing method of the present invention is a known technology, and for details, reference may be made to "TFLCD Panel Design and Construction Technology" written by Science Publishing House and Tian Minbo Yefeng.
以上各实施例计算中均未考虑存储电容面积对透过率的影响,考虑到存储电容面积,本发明的各实施例的透过率将更大,存储电容面积对比如图9所示,(a)为传统IPS结构,(b)为本实施例,像素透光范围为矩形包围面积。The influence of the area of the storage capacitor on the transmittance is not considered in the calculations of the above embodiments. Considering the area of the storage capacitor, the transmittance of each embodiment of the present invention will be greater. The comparison of the area of the storage capacitor is shown in Figure 9, ( a) is a traditional IPS structure, and (b) is this embodiment, the light transmission range of the pixel is a rectangular enclosing area.
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CN103226269B (en) * | 2013-04-28 | 2015-07-15 | 京东方科技集团股份有限公司 | Liquid crystal display panel, display device and electronic device |
CN104765207B (en) | 2015-01-20 | 2018-05-25 | 深圳市华星光电技术有限公司 | Dot structure and the liquid crystal display with the dot structure |
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CN105093764B (en) * | 2015-08-07 | 2017-12-08 | 武汉华星光电技术有限公司 | Half Transflective blue phase liquid crystal display and its liquid crystal display die set |
CN105068338B (en) * | 2015-08-28 | 2018-01-09 | 武汉华星光电技术有限公司 | Blue phase liquid crystal display module, blue phase liquid crystal display and preparation method thereof |
TWI669557B (en) * | 2018-05-31 | 2019-08-21 | 友達光電股份有限公司 | Pixel structure and display device |
TWI657299B (en) * | 2018-05-31 | 2019-04-21 | 友達光電股份有限公司 | Pixel structure and display device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101782702A (en) * | 2010-02-04 | 2010-07-21 | 上海交通大学 | Device for reducing driving voltage of blue phase liquid crystal display |
CN101900913A (en) * | 2009-05-29 | 2010-12-01 | 株式会社半导体能源研究所 | Liquid crystal display device and manufacturing method thereof |
CN202210200U (en) * | 2011-08-25 | 2012-05-02 | 京东方科技集团股份有限公司 | Array base board and liquid crystal panel |
CN202939395U (en) * | 2012-12-12 | 2013-05-15 | 河北工业大学 | Blue phase liquid crystal display device |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000347171A (en) * | 1999-06-07 | 2000-12-15 | Matsushita Electric Ind Co Ltd | Liquid crystal display element and its production |
JP5034162B2 (en) * | 2005-03-23 | 2012-09-26 | 日本電気株式会社 | Active matrix liquid crystal display device |
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2012
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101900913A (en) * | 2009-05-29 | 2010-12-01 | 株式会社半导体能源研究所 | Liquid crystal display device and manufacturing method thereof |
CN101782702A (en) * | 2010-02-04 | 2010-07-21 | 上海交通大学 | Device for reducing driving voltage of blue phase liquid crystal display |
CN202210200U (en) * | 2011-08-25 | 2012-05-02 | 京东方科技集团股份有限公司 | Array base board and liquid crystal panel |
CN202939395U (en) * | 2012-12-12 | 2013-05-15 | 河北工业大学 | Blue phase liquid crystal display device |
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