CN103018429A - Structure used for biologic detection chip of silicon nanowire and manufacturing method of structure - Google Patents

Structure used for biologic detection chip of silicon nanowire and manufacturing method of structure Download PDF

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CN103018429A
CN103018429A CN2012104311903A CN201210431190A CN103018429A CN 103018429 A CN103018429 A CN 103018429A CN 2012104311903 A CN2012104311903 A CN 2012104311903A CN 201210431190 A CN201210431190 A CN 201210431190A CN 103018429 A CN103018429 A CN 103018429A
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layer
silicon
detection chip
biological detection
nanowire array
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CN103018429B (en
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朱建军
赵宇楠
叶红波
戚继鸣
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Shanghai IC R&D Center Co Ltd
East China Normal University
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East China Normal University
Shanghai Integrated Circuit Research and Development Center Co Ltd
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Priority to US14/439,228 priority patent/US9362108B2/en
Priority to PCT/CN2012/084941 priority patent/WO2014067185A1/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

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  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
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Abstract

The invention discloses a structure used for a biologic detection chip of a silicon nanowire and a manufacturing method of the structure. The structure comprises a semiconductor substrate, a silicon dioxide isolating layer grown on the semiconductor substrate, a polycrystal silicon layer grown on the silicon dioxide isolating layer and a structural layer grown on the polycrystal silicon layer, wherein the polycrystal silicon layer comprises a silicon nanowire array formed in a pattern mode; the structural layer consists of an SiON (Silicon Oxynitride) layer, a TaN (Tantalum Nitride) layer and/or a Ta2O5 (Tantalum Pentoxide) layer from bottom to top in sequence; and the TaN layer and/or the Ta2O5 layer only cover the surfaces of the silicon nanowires in the silicon nanowire array. Therefore, by utilizing the structure, not only is the problem that the silicon nanowire array (SiNW) is easy to be polluted when being stored and applied solved, but also the biologic chip endures the diffusion pollution of ions such as Na, K, Fe, Cu and Ca, and the influence of various chemical factors such as pH values, so that the high stability in detection is realized.

Description

A kind of structure and manufacture method thereof for the silicon nano-wire biological detection chip
Technical field
The present invention relates to the manufacturing field of biochip, relate in particular to a kind of passivation layer structure and process that is applied to silicon nanowire array surface in the biochip.
Background technology
At present, diabetes, cardiovascular disease, breathing problem, hepatopathy, cancer are the major diseases that threatens human health.Although medical science and related discipline make constant progress, people still make slow progress on the fast diagnosis and treatment of these diseases.The reason that disease can not found early is, its-, to send out feature not obvious for related diseases when early stage, and the associated protein factor quantity of its secretion is relatively less, is not easy to detect with present detection means; Its two, namely enable to detect relevant disease factor, the expense that it is required and time also are many; Therefore, have high sensitivity, detect the sensor of relevant disease fast, cheaply, the diagnosis and treatment of the major disease of harm humans health are had far reaching significance.
The used sensor of industry perhaps based on optical principle, also exists-a bit based on the field effect FET sensors of nanometer technology, also have the sensor that these several modes is combined formation normally based on electrochemical principle.The technology comparative maturity of electrochemical sensor, but it has relatively high expectations to solution environmental, and volume is large.And present sensor mainly is to detect for a kind of single target molecule, because a lot of with the molecule of any-kind of disease association, and they may be separate; To detect more accurately a kind of existence of disease, must carry out joint-detection to the various diseases factor.Comparatively speaking, take silicon nanowire array (SiNW) structure as core, adopt field effect transistor to realize signals collecting and amplification, can more effective detection echo signal.
For example, the patent of Chinese patent application CN200910030342.7 has disclosed a kind of making integrated approach of multichannel high-sensitive biosensor.With respect to traditional checkout equipment, have following advantage based on the field effect FET sensor of nano-wire array:
1), highly sensitive: at first, field effect transistor itself just has the effect that signal amplifies, and can a small amount of charge signal that effect is got on be amplified; Secondly, because the large specific surface area that nano wire itself has and quantum confined effect etc., so that have very high sensitivity based on the field effect FET sensor of nano-wire array;
2), detection speed is fast: can reach the frequency of GHZ based on the field effect FET sensor speed of silicon nanowire array, compare with traditional checkout equipment, its detection speed is very fast;
3), be easy to integratedly detect with high flux: compare with checkout equipment with traditional sensors, have easy of integration and advantage cheaply based on the field effect transistor of nano-wire array, because manufacturing process and the semiconductor technology of device are thought compatibility, therefore, easy with ripe semi-conductor industry and the emerging industries such as MEMS are compatible, thereby can obtain the sensing of feature richness, superior performance.
Yet, for the structure of silicon nanowire array, in the process of technology and applied research, the problem that also exists several needs to solve:
1), preservation is contaminated easily in using: silicon nanowire array line surfactivity is very high, the simple SiO2 of employing passivation (as: adopting this technology among the above-mentioned CN200910030342.7 that mentions), be difficult to solve Na and the isoionic diffuse pollution of K, and the impact of the environmental factors such as pH value and humidity; This is so that chip is subjected to the impact of the factors such as environment salinity, pH value and humiture too large, and the preservation transport difficulty is large;
2) problems such as unstable properties that, exist in the use: in biological detection, the diversity of this body fluid of component to be measured, make too chip need face the isoionic diffuse pollution of Na, K, Fe, Cu and Ca, and the impact of the number of chemical factor such as pH value, from experimental study, show as the unstable of detection.
Summary of the invention
In view of the existing problem of silicon nano-wire biological detection chip that adopts in the art methods, fundamental purpose of the present invention is to provide a kind of structure and manufacture method thereof of silicon nano-wire biological detection chip, by improving passivation layer structure and the process on silicon nanowire array surface, make the silicon nano-wire biological detection chip in preserving use, be not easy contaminated stability with having kept its use performance.
For reaching above-mentioned purpose, the invention provides a kind of structure of silicon nano-wire biological detection chip, it comprises Semiconductor substrate, be grown in silicon dioxide separation layer on the described Semiconductor substrate, be grown in the polysilicon layer on the silicon dioxide separation layer and be grown in structural sheet on the described polysilicon layer; Wherein, the silicon nanowire array that comprises graphical formation in the polysilicon layer; The structure of structural sheet is for comprising successively from bottom to up SiON layer, TaN layer and/or Ta 2O 5Layer, wherein, described TaN and/or Ta 2O 5Layer only is covered in the surface of each silicon nanowires in the described silicon nanowire array.
According to the structure of silicon nano-wire biological detection chip of the present invention, the thickness of described silicon dioxide separation layer is 1000 ~ 5000.
According to the structure of silicon nano-wire biological detection chip of the present invention, described polysilicon layer thickness is 50 ~ 1000.
According to the structure of silicon nano-wire biological detection chip of the present invention, the live width scope of described silicon nanowires is 5nm ~ 130nm; Its thickness is 5nm ~ 100nm.
According to the structure of silicon nano-wire biological detection chip of the present invention, the thickness of described SiON layer is 10 ~ 50; The thickness of described TaN layer is 10 ~ 50; Described Ta 2O 5The thickness of layer is 10 ~ 50.
For reaching above-mentioned purpose, the present invention also provides a kind of manufacture method of silicon nano-wire biological detection chip, and it comprises the steps:
Step S01: Semiconductor substrate is provided;
Step S02: at described Semiconductor substrate growth silicon dioxide separation layer;
Step S03: growing polycrystalline silicon layer on described silicon dioxide separation layer;
Step S04: graphical described polysilicon layer is to form silicon nanowire array;
Step S05: at the structural sheet of described silicon nanowire array growth one deck, wherein, described structural sheet structure comprises SiON layer, TaN and/or Ta from top to bottom successively 2O 5Layer;
Step S06: remove TaN and/or Ta between each silicon nanowires in the silicon nanowire array 2O 5Layer.
According to the manufacture method of silicon nano-wire biological detection chip of the present invention, the described silicon dioxide separation layer growth technique among the described step S02 is wet-oxygen oxidation technique.
According to the manufacture method of silicon nano-wire biological detection chip of the present invention, the formation silicon nanowire array among the described step S04 is finished by dry plasma etch technique.
According to the manufacture method of silicon nano-wire biological detection chip of the present invention, the SiON layer among the described step S05 is to form described TaN and/or Ta in the silicon nanowire array superficial growth by thermal oxidation method 2O 5Layer forms by the growth of atomic layer deposition technique.
According to the manufacture method of silicon nano-wire biological detection chip of the present invention, the removal technique among the described step S06 is to adopt dry plasma etch technique.
Can find out from technique scheme; the structure of silicon nano-wire biological detection chip of the present invention and manufacture method; owing to have structural sheet as protective seam; not only solve silicon nanowire array (SiNW) and preserved easy the to be contaminated problem that exists in the application; and make it in biological detection; even presenting in the multifarious situation of this body fluid of component to be measured; can make too chip face the test of Na, K, Fe, Cu and the isoionic diffuse pollution of Ca; and the impact of the number of chemical factor such as pH value, namely realized the high stability that detects.
Description of drawings
Fig. 1 is the structural representation of silicon nano-wire biological detection chip one specific embodiment of the present invention
Fig. 2 is the process flow diagram of the silicon nano-wire biological detection chip of the present invention's one specific embodiment
Fig. 3-5 by process flow steps among Fig. 2 of the present invention substep generate the structural representation of silicon nano-wire biological detection chip
Embodiment
Some exemplary embodiments that embody feature ﹠ benefits of the present invention will be described in detail in the explanation of back segment.Be understood that the present invention can have in different examples various variations, its neither departing from the scope of the present invention, and explanation wherein and be shown in the usefulness that ought explain in essence, but not in order to limit the present invention.
Above-mentioned and other technical characterictic and beneficial effect are elaborated to structure and the manufacture method thereof of silicon nano-wire biological detection chip of the present invention in connection with embodiment and accompanying drawing 1-Fig. 5.
See also Fig. 1, Fig. 1 is the structural representation of silicon nano-wire biological detection chip one specific embodiment of the present invention.As shown in the figure, silicon nano-wire biological detection chip structure of the present invention and existing silicon nano-wire biological detection chip structure are basic identical, it comprises Semiconductor substrate 1, be grown in silicon dioxide separation layer 2 on the Semiconductor substrate, be grown in the polysilicon layer 3 of the silicon nanowire array 4 that comprises graphical formation on the silicon dioxide separation layer 2, and structural sheet.
What silicon nano-wire biological detection chip structure of the present invention was not identical with existing silicon nano-wire biological detection chip structure is that as shown in Figure 1, this structural sheet structure comprises SiON layer 5, TaN and/or Ta from bottom to up successively 2O 5Layer.In the present embodiment, this structural sheet structure comprises SiON layer 5, TaN and Ta from bottom to up successively 2O 5Layer 6.Wherein, this TaN and Ta 2O 5Layer only is covered in the surface of each silicon nanowires in the described silicon nanowire array.Adopt 5 surface passivation of SiON layer can solve very high the causing of silicon nanowire array line surfactivity and preserve exist in the use contaminated easily, and the impact of the environmental factors such as pH value and humidity.Adopt TaN and Ta 2O 5Layer 6 can solve Na and K plasma to the diffuse pollution of silicon nanowires.
See also Fig. 2, Fig. 2 is the process flow diagram of the silicon nano-wire biological detection chip of the present invention's one specific embodiment.In one embodiment of the present of invention, the manufacture method of silicon nano-wire biological detection chip comprises the steps:
Step S01: Semiconductor substrate 1 is provided;
Step S02: at Semiconductor substrate growth silicon dioxide separation layer 2;
Step S03: growing polycrystalline silicon layer 3 on the silicon dioxide separation layer;
Step S04: graphical polysilicon layer 3 is to form silicon nanowire array 4;
Step S05: at the certain thickness structural sheet of silicon nanowire array 4 growths, wherein, the structural sheet structure comprises SiON layer 5TaN and Ta from top to bottom successively 2O 5Layer 6;
Step S06: remove TaN and Ta between each silicon nanowires in the silicon nanowire array 4 2O 5Layer 6.
See also Fig. 3, Fig. 3 by process flow steps S01, step S02 among Fig. 2 of the present invention and step S03 substep generate the part-structure synoptic diagram of silicon nano-wire biological detection chip.As shown in the figure, at first, at the method growth layer of silicon dioxide layer 2 of Semiconductor substrate 1 usefulness wet-oxygen oxidation, preferably, silicon dioxide layer 2 thickness can be 1000 ~ 5000; Then, at silicon dioxide layer 2 usefulness boiler tube growing polycrystalline silicon layers 3, its thickness can be 50 ~ 1000.
See also Fig. 4, Fig. 4 by process flow steps S04 among Fig. 2 of the present invention substep generate the part-structure synoptic diagram of silicon nano-wire biological detection chip.That is to say, next, polysilicon layer 3 is carried out photoetching and dry etching formation silicon nanowires (SiNW) array 4.The live width scope of the silicon nanowires in this silicon nanowire array 4 can be 5nm ~ 130nm; Its thickness can be 5nm ~ 100nm.
See also Fig. 5, Fig. 5 is the synoptic diagram that process flow steps S05 generates structural sheet part-structure in the silicon nanowire array among Fig. 2 of the present invention.In an embodiment of the present invention, silicon nanowire array 4 surfaces can form SiON layer 5 by the thermal oxidation method growth, and the thickness of SiON layer 5 can be 10 ~ 50.
Please consult Fig. 1, Fig. 1 has comprised that process flow steps S06 and S07 among Fig. 2 of the present invention generate the synoptic diagram of structural sheet part-structure in the silicon nanowire array again.In an embodiment of the present invention, can be by atomic layer deposition technique growth TaN and Ta 2O 5Then layer 6, utilizes dry plasma etch technique to remove TaN and Ta between each silicon nanowires 2O 5Layer 6.In an embodiment of the present invention, the thickness of TaN layer can be 10 ~ 50; Ta 2O 5The thickness of layer can be 10 ~ 50.In the processing step of present embodiment, TaN can also play the effect of etching stop layer.
In sum, the structure of silicon nano-wire biological detection chip of the present invention and manufacture method not only solve silicon nanowire array (SiNW) and preserve easy the to be contaminated problem that exists in the application, and make it in biological detection, even presenting in the multifarious situation of this body fluid of component to be measured, also can make chip stand the test of Na, K, Fe, Cu and the isoionic diffuse pollution of Ca, and the impact of the number of chemical factor such as pH value, namely realized the high stability that detects.
Above-described only is embodiments of the invention; described embodiment limits scope of patent protection of the present invention; therefore the equivalent structure done of every utilization instructions of the present invention and accompanying drawing content changes, and in like manner all should be included in protection scope of the present invention.

Claims (10)

1. the structure of a silicon nano-wire biological detection chip comprises:
Semiconductor substrate;
The silicon dioxide separation layer is grown on the described Semiconductor substrate;
Polysilicon layer is grown on the described silicon dioxide separation layer, comprises the silicon nanowire array of graphical formation in the described polysilicon layer; It is characterized in that: also comprise:
Structural sheet is grown on the described polysilicon layer; Described structural sheet structure comprises SiON layer, TaN and/or Ta from bottom to up successively 2O 5Layer, wherein, described TaN and/or Ta 2O 5Layer only is covered in the surface of each silicon nanowires in the described silicon nanowire array.
2. the structure of silicon nano-wire biological detection chip according to claim 1 is characterized in that, the thickness of described silicon dioxide separation layer is 1000 ~ 5000.
3. the structure of silicon nano-wire biological detection chip according to claim 1 is characterized in that, described polysilicon layer thickness is 50 ~ 1000.
4. the structure of silicon nano-wire biological detection chip according to claim 1 is characterized in that, the live width scope of described silicon nanowires is 5nm ~ 130nm; Its thickness is 5nm ~ 100nm.
5. the structure of silicon nano-wire biological detection chip according to claim 1 is characterized in that, the thickness of described SiON layer is 10 ~ 50; The thickness of described TaN layer is 10 ~ 50; Described Ta 2O 5The thickness of layer is 10 ~ 50.
6. the manufacture method of a silicon nano-wire biological detection chip is characterized in that, comprises the steps:
Step S01: Semiconductor substrate is provided;
Step S02: at described Semiconductor substrate growth silicon dioxide separation layer;
Step S03: growing polycrystalline silicon layer on described silicon dioxide separation layer;
Step S04: graphical described polysilicon layer is to form silicon nanowire array;
Step S05: at the structural sheet of described silicon nanowire array growth one deck, wherein, described structural sheet structure comprises SiON layer, TaN and/or Ta from bottom to up successively 2O 5Layer;
Step S06: remove TaN layer and/or Ta between each silicon nanowires in the silicon nanowire array 2O 5Layer.
7. the manufacture method of silicon nano-wire biological detection chip according to claim 6 is characterized in that, the described silicon dioxide separation layer growth technique among the described step S02 is wet-oxygen oxidation technique.
8. the manufacture method of silicon nano-wire biological detection chip according to claim 6 is characterized in that, the formation silicon nanowire array among the described step S04 is finished by dry plasma etch technique.
9. the manufacture method of silicon nano-wire biological detection chip according to claim 6 is characterized in that, the SiON layer among the described step S05 is to form described TaN and/or Ta in the silicon nanowire array superficial growth by thermal oxidation method 2O 5Layer forms by the growth of atomic layer deposition technique.
10. the manufacture method of silicon nano-wire biological detection chip according to claim 6 is characterized in that, the removal technique among the described step S06 is to adopt dry plasma etch technique.
CN201210431190.3A 2012-11-01 2012-11-01 A kind of structure and its manufacture method for silicon nano-wire biological detection chip Active CN103018429B (en)

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CN201210431190.3A CN103018429B (en) 2012-11-01 2012-11-01 A kind of structure and its manufacture method for silicon nano-wire biological detection chip
US14/439,228 US9362108B2 (en) 2012-11-01 2012-11-21 Silicon nanowire bio-chip structure
PCT/CN2012/084941 WO2014067185A1 (en) 2012-11-01 2012-11-21 Structure for silicon nanowire chip for biological detection and manufacturing method therefor

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
CN104357917A (en) * 2014-09-24 2015-02-18 中国科学院天津工业生物技术研究所 Carrier for microarray biochip, preparation method of carrier and microarray biochip
WO2017008699A1 (en) * 2015-07-10 2017-01-19 北京纳米能源与系统研究所 Device for measuring cell traction force, and measuring method and preparation method

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