CN103017942A - Measurement structure for contacting and bonding movable beam in micro-mechanical system and measurement method thereof - Google Patents
Measurement structure for contacting and bonding movable beam in micro-mechanical system and measurement method thereof Download PDFInfo
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- CN103017942A CN103017942A CN201210516984XA CN201210516984A CN103017942A CN 103017942 A CN103017942 A CN 103017942A CN 201210516984X A CN201210516984X A CN 201210516984XA CN 201210516984 A CN201210516984 A CN 201210516984A CN 103017942 A CN103017942 A CN 103017942A
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Abstract
The invention discloses a measurement structure for contacting and bonding a movable beam in a micro-mechanical system. The measurement structure comprises a substrate, a cross-shaped beam, a pull-down electrode, a pulling electrode and a substrate contact electrode array, the cross-shaped beam is composed of a transverse beam and a reverse support beam, and the reverse support beam is connected onto the substrate, the substrate contact electrode array adopts a ion implantation doping mode to be formed on a top face of the substrate, the substrate contact electrode array comprises at least three mutually-parallel strip-type electrodes, and one end of each strip-type electrode is connected with a pressure welding block. The pull-down electrode, the pulling electrode and the substrate contact electrode array are all connected onto the substrate, and the substrate contact electrode array and the pull-down electrode are located below a same side of the transverse beam, and the pulling electrode is located below the other side of the transverse beam. The measurement structure solves the problem that the surface of a general strip-type electrode is fluctuant, obtained contacting and bonding information of the movable beam is accurate. Simultaneously, the invention further discloses a measurement method of the measurement structure, and the measurement method is simple and practicable.
Description
Technical field
The present invention relates to the field of a kind of micro mechanical system (being called for short MEMS in the literary composition) manufacturing, performance and reliability testing thereof, specifically, relate to movable fine strain of millet contact adheres in a kind of micro mechanical system measurement structure and measuring method thereof.
Background technology
The adhesion of original state usually can appear can't being returned to after two surfaces are in contact with one another in movable structure in the MEMS device at work.Adhere to directly relatedly with the pattern of surface in contact and the physical dimension that contacts, for different samples, the surface adhesion characteristic is different, therefore, is necessary to set up a kind of convenience and the analytical approach of accurately Surface Contact adhesion.
Existing contact adheres to and analyzes mainly is by means of atomic force microscope and white light interferometer, and measuring method is complicated, and instrument cost is expensive.A kind of electrical measurement method is provided, directly obtains the information of relevant adhesion, seem more simple and practical.
Summary of the invention
Technical matters: technical matters to be solved by this invention is, the measurement structure that movable fine strain of millet contact adheres in a kind of micro mechanical system is provided, this measurement structure has solved the problem that the existing surface of general strip electrode height rises and falls, and should measure the movable fine strain of millet contact adhesion information of structure acquisition accurately and reliably, simultaneously, the present invention also provides the measuring method of this measurement structure, and is simple.
Technical scheme: for realizing solving the problems of the technologies described above, the technical solution used in the present invention is:
The measurement structure that movable fine strain of millet contact adheres in a kind of micro mechanical system, described measurement structure comprise substrate, rood beam, are used for the pull-down electrode of static excitation, are used for adhering to pulling electrode and the substrate contact electrod-array that separates; Rood beam forms by crossbeam with the cross-coupled brace summer that reverses of beam vertical, reverses brace summer and is connected on the substrate by the anchor district; Described substrate contact electrod-array adopts the doping way of Implantation to be formed on the end face of substrate, the substrate contact electrod-array comprises at least three strip electrodes that are parallel to each other and arrange, leave the gap between the adjacent bar electrode, an end of every strip electrode connects a press welding block; Pull-down electrode, pulling electrode, substrate contact electrod-array all are connected on the substrate, and substrate contact electrod-array and pull-down electrode are positioned at below, crossbeam the same side, and the substrate contact electrod-array is positioned at the below of beam-end; The pulling electrode is positioned at crossbeam opposite side below.
The measuring method of the measurement structure that movable fine strain of millet contact adheres in the above-mentioned micro mechanical system, this measuring method may further comprise the steps:
Step 1) applies DC voltage between rood beam and pull-down electrode, an end of crossbeam is bent downwardly, and contacts with the substrate contact electrod-array of below;
Step 2) when crossbeam bend when contacting with two and two above strip electrodes, strip electrode is switched on, and measures the resistance between the press welding block, judges the situation that contacts of rood beam and strip electrode;
Step 3) progressively reduces the voltage on the pull-down electrode, until after being zero, if crossbeam is upspring again, and leaves substrate, shows that then this rood beam adheres to, and returns step 1), strengthens the DC voltage that applies; If rood beam can't be upspring, show that then this rood beam adheres to, and enters step 4);
Step 4) is for the rood beam that occurs to adhere to, apply voltage at the pulling electrode, the end that crossbeam adheres to moves downward, drive is reversed brace summer and is reversed, thereby make crossbeam that an end perk that adheres to occur, make to adhere to and separate, according to the voltage that is applied on the pulling electrode, calculate the adhesion that obtains under certain contact length by pulling electrostatic force.
Beneficial effect: compared with prior art, the information of can the Measurement accuracy movable fine strain of millet contact of technical scheme of the present invention adhesion is low to the accuracy requirement of surveying instrument simultaneously.In the prior art, the substrate contact electrode of MEMS movable beam mostly is the tabula rasa formula.The substrate contact electrod-array that the strip electrode that the present invention adopts the doping way of Implantation to form space, parallel arranged forms.This substrate contact electrod-array is equivalent to be embedded in substrate, makes the end face of substrate have planarization.This has solved the problem that the existing surface of general array strip electrode height rises and falls.Simultaneously, this substrate contact electrod-array can provide again the tolerance of contact length.Whole test process adopts the method for resistance measurement, to surveying instrument require lowly, and can realize easily on-line testing.
Description of drawings
Fig. 1 is structural representation of the present invention.
Fig. 2 is substrate synoptic diagram of the present invention.
Have among the figure: substrate 1, rood beam 2, pull-down electrode 3, pulling electrode 4, substrate contact electrod-array 5, crossbeam 21, reverse brace summer 22, anchor district 23-24, press welding block 51-58.
Embodiment
Below in conjunction with accompanying drawing, technical scheme of the present invention is described in detail.
As depicted in figs. 1 and 2, the measurement structure that movable fine strain of millet contact adheres in a kind of micro mechanical system of the present invention, comprise substrate 1, rood beam 2, be used for static excitation pull-down electrode 3, be used for adhering to pulling electrode 4 and the substrate contact electrod-array 5 that separates.Rood beam 2 is comprised of with the brace summer 22 that reverses that is connected with crossbeam 21 square crossings crossbeam 21, reverses brace summer 22 and is connected on the substrate 1 by anchor district 23,24.Substrate contact electrod-array 5 adopts the doping way of Implantation to be formed on the end face of substrate 1, and substrate contact electrod-array 5 comprises at least three strip electrodes that are parallel to each other and arrange.Leave the gap between the adjacent bar electrode.One end of every strip electrode connects a press welding block.Pull-down electrode 3, pulling electrode 4, substrate contact electrod-array 5 all are connected on the substrate 1.Substrate contact electrod-array 5 and pull-down electrode 3 are positioned at below, crossbeam 21 the same sides, and substrate contact electrod-array 5 is positioned at the below of crossbeam 21 ends.Pulling electrode 4 is positioned at crossbeam 21 opposite sides below.
Take Fig. 1 as example, comprise 8 strip electrodes in the substrate contact electrod-array 5.An end of 8 strip electrodes is connected with press welding block 51-58.Certainly, substrate contact electrod-array 5 can comprise the strip electrode of other quantity, for example 6,12 etc.
When this measures structure in processing, can be used as and accompany sheet together to process, need not make specially, similar with the manufacturing process of traditional MEMS beam.
When preparing the sensor of said structure, substrate contact electrod-array 5 adopts the doping way of Implantation to form the strip electrode array of space, parallel arranged, manufacturing process is: select p-type silicon as backing material, distribution of electrodes graphic making mask plate according to design, adopt the Implantation mode that the p-type silicon substrate is mixed N-shaped impurity, wherein the N-shaped impurity concentration is higher than the p-type impurity concentration of former substrate, forms the N-shaped conductive region by the impurity compensation effect.Finish the making of bar shaped array substrate contact electrode.The strip electrode array of making like this be the p-type electric-conducting district between per two N-shaped buss, forms two back-to-back pn and ties, and therefore, be not conducting under normal circumstances between two strip electrodes.The width of strip electrode and interval can be determined according to measuring accuracy and craft precision, be generally 0. several μ m～several μ m and all can.
The concrete measuring process of the sensor of said structure is as follows:
Step 1) applies DC voltage between rood beam 2 and pull-down electrode 3, under electrostatic forcing, an end of the crossbeam 21 of cross fine strain of millet 2 (such as the left end among Fig. 1) is bent downwardly.Progressively increase with actuation voltage, crossbeam 21 crooked increasings, and contact with the substrate contact electrod-array 5 of below.Voltage is larger, and the contact length between crossbeam 21 and the substrate contact electrod-array 5 is longer.
Step 2) be bent to when contacting with two and two above strip electrodes when crossbeam 21, the strip electrode that originally separates is switched on.Between the measurement press welding block 51 and 52, between the press welding block 51 and 53, between the press welding block 51 and 54 ..., the resistance between the press welding block 51 and 58.Analyze according to resistance: when resistance value less than 100 Ω magnitudes, show that rood beam 2 has touched corresponding strip electrode place; When resistance value greater than M Ω magnitude, show that rood beam 2 does not touch corresponding strip electrode place.
Step 3) progressively reduces the voltage on the pull-down electrode 3 to the rood beam of certain contact length, until after being zero, if crossbeam 21 is upspring again, and leaves substrate, shows that then this rood beam 2 does not adhere to, and returns step 1), the DC voltage that increasing applies; If rood beam 2 can't be upspring, show that then this rood beam 2 adheres to, and enters step 4).
Step 4) is for the rood beam 2 that occurs to adhere to, apply voltage at pulling electrode 4, the end (such as the right-hand member among Fig. 1) that crossbeam 21 does not occur to adhere to moves downward, drive is reversed brace summer 22 and is reversed, thereby make crossbeam 21 that an end (such as the left end among Fig. 1) perk that adheres to occur, make to adhere to and separate.According to the voltage that is applied on the pulling electrode 4, by pulling electrostatic force, can calculate the adhesion that obtains under certain contact length.
For obtaining the adhesion under the rood beam 2 different contact lengths, above-mentioned measuring method also comprises step 5): repeating step 1)-and step 4), and in step 1), between rood beam 2 and pull-down electrode 3, apply different DC voltage, make rood beam 2 different from the contact length of substrate contact electrod-array 5, obtain the adhesion under the different contact lengths.
The above only is preferred implementation of the present invention; be noted that for those skilled in the art; under the prerequisite that does not break away from the principle of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (3)
1. the measurement structure that movable fine strain of millet contact adheres in the micro mechanical system is characterized in that: described measurement structure comprises substrate (1), rood beam (2), is used for the pull-down electrode (3) of static excitation, is used for adhering to pulling electrode (4) and the substrate contact electrod-array (5) that separates; Rood beam (2) is comprised of with the brace summer (22) that reverses that is connected with crossbeam (21) square crossing crossbeam (21), reverses brace summer (22) and is connected on the substrate (1) by anchor district (23,24); Described substrate contact electrod-array (5) adopts the doping way of Implantation to be formed on the end face of substrate (1), substrate contact electrod-array (5) comprises at least three strip electrodes that are parallel to each other and arrange, leave the gap between the adjacent bar electrode, an end of every strip electrode connects a press welding block;
Pull-down electrode (3), pulling electrode (4), substrate contact electrod-array (5) all are connected on the substrate (1), substrate contact electrod-array (5) and pull-down electrode (3) are positioned at below, crossbeam (21) the same side, and substrate contact electrod-array (5) is positioned at the below of crossbeam (21) end; Pulling electrode (4) is positioned at crossbeam (21) opposite side below.
2. measuring method of utilizing in the micro mechanical system claimed in claim 1 the measurement structure that movable fine strain of millet contact adheres to, it is characterized in that: this measuring method may further comprise the steps:
Step 1) applies DC voltage between rood beam (2) and pull-down electrode (3), an end of crossbeam (21) is bent downwardly, and contacts with the substrate contact electrod-array (5) of below;
Step 2) be bent to when contacting with two and two above strip electrodes when crossbeam (21), strip electrode is switched on, and measures the resistance between the press welding block, judges the situation that contacts of rood beam (2) and strip electrode;
Step 3) progressively reduces the voltage on the pull-down electrode (3), until after being zero, if crossbeam (21) is upspring again, and leaves substrate, shows that then this rood beam (2) does not adhere to, and returns step 1), the DC voltage that increasing applies; If rood beam (2) can't be upspring, show that then this rood beam (2) adheres to, and enters step 4);
Step 4) is for the rood beam (2) that occurs to adhere to, apply voltage at pulling electrode (4), the end that crossbeam (21) does not occur to adhere to moves downward, drive is reversed brace summer (22) and is reversed, thereby make crossbeam (21) that an end perk that adheres to occur, make to adhere to and separate, according to the voltage that is applied on the pulling electrode (4), calculate the adhesion that obtains under certain contact length by pulling electrostatic force.
3. contact the measuring method of the measurement structure that adheres to according to movable fine strain of millet in the micro mechanical system claimed in claim 2, it is characterized in that: also comprise step 5): repeating step 1)-step 4), between rood beam (2) and pull-down electrode (3), apply different DC voltage, make rood beam (2) different from the contact length of substrate contact electrod-array (5), obtain the adhesion under the different contact lengths.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210516984.XA CN103017942B (en) | 2012-12-05 | 2012-12-05 | Measurement structure for contacting and bonding movable beam in micro-mechanical system and measurement method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210516984.XA CN103017942B (en) | 2012-12-05 | 2012-12-05 | Measurement structure for contacting and bonding movable beam in micro-mechanical system and measurement method thereof |
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| CN103017942A true CN103017942A (en) | 2013-04-03 |
| CN103017942B CN103017942B (en) | 2015-06-03 |
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| CN201210516984.XA Expired - Fee Related CN103017942B (en) | 2012-12-05 | 2012-12-05 | Measurement structure for contacting and bonding movable beam in micro-mechanical system and measurement method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116106717A (en) * | 2023-04-12 | 2023-05-12 | 合肥瀚博智能科技有限公司 | Intelligent detection and analysis system for integrated micro-optical-electromechanical semiconductor device |
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| US6073484A (en) * | 1995-07-20 | 2000-06-13 | Cornell Research Foundation, Inc. | Microfabricated torsional cantilevers for sensitive force detection |
| CN101839779A (en) * | 2010-04-21 | 2010-09-22 | 东南大学 | Structure for measuring contact force distribution of micro-cantilever and method thereof |
| CN101839706A (en) * | 2010-04-21 | 2010-09-22 | 东南大学 | Structure for measuring contact length of micro-cantilever and method thereof |
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- 2012-12-05 CN CN201210516984.XA patent/CN103017942B/en not_active Expired - Fee Related
Patent Citations (3)
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|---|---|---|---|---|
| US6073484A (en) * | 1995-07-20 | 2000-06-13 | Cornell Research Foundation, Inc. | Microfabricated torsional cantilevers for sensitive force detection |
| CN101839779A (en) * | 2010-04-21 | 2010-09-22 | 东南大学 | Structure for measuring contact force distribution of micro-cantilever and method thereof |
| CN101839706A (en) * | 2010-04-21 | 2010-09-22 | 东南大学 | Structure for measuring contact length of micro-cantilever and method thereof |
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| DOOYOUNG HAH等: "A Low-Voltage Actuated Micromachined Microwave Switch Using Torsion Springs and Leverage", 《IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES》 * |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116106717A (en) * | 2023-04-12 | 2023-05-12 | 合肥瀚博智能科技有限公司 | Intelligent detection and analysis system for integrated micro-optical-electromechanical semiconductor device |
| CN116106717B (en) * | 2023-04-12 | 2023-06-30 | 合肥瀚博智能科技有限公司 | Intelligent detection and analysis system for integrated micro-optical-electromechanical semiconductor device |
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Granted publication date: 20150603 Termination date: 20171205 |