CN103014637A - Plasma control device, flow control and flow control method - Google Patents
Plasma control device, flow control and flow control method Download PDFInfo
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- CN103014637A CN103014637A CN2012102973887A CN201210297388A CN103014637A CN 103014637 A CN103014637 A CN 103014637A CN 2012102973887 A CN2012102973887 A CN 2012102973887A CN 201210297388 A CN201210297388 A CN 201210297388A CN 103014637 A CN103014637 A CN 103014637A
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Abstract
The invention provides a plasma control device, a flow control device and a flow control method. Even through the flow value of an introduced gas which should be introduced into a vacuum chamber is large, the flow is controlled at high speed in a narrow range close to the flow value, for example, a plasma in the vacuum chamber is continuously kept at the desired state, and the best state for such as film forming is kept. The plasma control device comprises a first valve located on a first flow path, wherein the introduced gas introduced into the vacuum chamber flows through the first flow path; a first valve control part for controlling the opening of the first valve, thus the flow of the introduced gas introduced into the vacuum chamber via the first valve becomes the first flow; a plasma monitor; a second valve located on a second flow path through which the introduced gas flows; a second valve control part for controlling the opening of the second valve based on the deviation between the plasma intensity measured by the plasma monitor and the pre-set plasma intensity.
Description
Technical field
The present invention relates to the plasma control apparatus controlled for the state of the plasma body that generates when forming film by sputtering method for example and flow rate control device, flow control program.
Background technology
In the manufacturing of the functional membrane that is used for touch panel and organic EL illuminating etc., to the film injury, the at low temperatures reactive sputtering method of film forming is compared in use with other films during for fear of film forming.
Shown in patent documentation 1, described reactive sputtering method is to make the targets such as Al, ITO, Si and the substrate that forms film on its surface or film etc. body material is relative to dispose in vacuum chamber, and the limit makes the rare gas such as argon Ar and flows into the vacuum chamber inner edge as gases such as the oxygen of reactant gas, nitrogen and apply high-intensity magnetic field between target and substrate, produces thus the method that plasma body carries out film forming.Thus, the material that will consist of target by plasma body as bombardment by ions out makes the ion that impacted out and reactant gas reaction and the oxide compound that generates, nitride etc. are deposited in the surface of substrate, thereby can carry out film forming.
Yet, be well known that, described reactive sputtering method can make the state of plasma body change owing to flow into the flow of the reactant gas in the vacuum chamber, also can change thereby cause being formed on the film forming speed of oxide film on the body material etc. and thin film-forming method etc.More particularly, if the limit remains the flow that certain flow limit increases reactant gas with the flow of argon Ar, then as shown in Figure 5, film forming speed and thin film-forming method can be according to the variations that occurs in sequence of metal mode, transitional region, pattern of reactivity.
The below describes each reactive mode, the metal mode that during reactant gas is in low discharge, shows, although film forming speed is high, but because the flow of reactant gas is too small with respect to the ion that impacts out from target, so be that target self that chemical reaction do not occur is deposited in the thin film-forming method on the body material.In other words, metal mode can not be carried out the film forming of desirable compound close to common sputter state.
On the other hand, be in the pattern of reactivity that shows during the large flow at reactant gas, because the flow of reactant gas is superfluous with respect to the ion that impacts out from target, so not only have ion and the reactant gas reaction impacting out from target, and the surface of target self can be reacted with reactant gas also.Therefore, although by the compound that the reaction of target and reactant gas is generated be piled up in body material the surface and can film forming, its film forming speed can become low speed.
As can be seen from Figure 5, with respect to described pattern, be in the transitional region between metal mode and the pattern of reactivity, although the interval as the flow of reactant gas is very narrow interval, but because transitional region is the zone that only has the ion that impacts out from target and reactant gas to react, so compare with described pattern of reactivity, can make with 5～6 times speed desirable compound film forming.
Therefore, in the reactive sputtering method, require the control reactant gas to flow into the flow of vacuum chamber, continue to carry out the film forming in described transitional region.To keep such one-tenth membrane stage in transitional region as purpose, adopted plasma control apparatus 100A shown in Figure 4 in the past.This plasma body control device 100A comprises: mass flow controller 1A, be arranged at for the stream L1 that reactant gas is imported in the vacuum chamber VC, and the flow that imports gas is controlled; And plasma monitoring device 3A, measure the plasma intensity in the vacuum chamber VC.In addition, by described mass flow controller 1A the flow that imports gas is carried out feedback control, so that the plasma intensity in the transitional region becomes the setting plasma intensity, and make in measurement plasma intensity that the plasma monitoring device measures and the deviation between the described setting plasma intensity and diminish.
But, as shown in Figure 5, because it is very narrow to become the interval of flow of reactant gas of transitional region, and be again larger value as flux values, so the state at plasma body has occured in the situation of change, be difficult to the flow of reactant gas is continued to remain optimum value, thereby be difficult to the lasting state that keeps transitional region.More specifically, because the flow of the reactant gas that should flow through is large, select the large mass flow controller of controlled range so just have to, such mass flow controller is difficult to realize the flow that actual flow is crossed is continued to remain on the high responsiveness that becomes the narrow flow of transitional region interval.On the other hand, in the situation of only having used the valve with the high responsiveness that can carry out flow control in the narrow flow interval that is becoming transitional region, because the movable range of valve is too small, so can not flow through the flux values that needs at all.
In addition, as shown in Figure 5, owing in the flow of reactant gas and the relation between the thin film-forming method, have hysteresis phenomenon, if so the responsiveness of mass flow controller not, follow unsuccessfully, even cause for once superfluous reactant gas to import in the vacuum chamber, returning to original state just must be around one week of response path, so can spend the very long time.
The prior art document
Patent documentation 1: Japanese Patent Publication communique Unexamined Patent 2-290966 number
Summary of the invention
In view of described problem, the object of the present invention is to provide a kind of plasma control apparatus, flow rate control device and flow control method, even it is large to import the flux values of the importing gas in the vacuum chamber, also can control at high speed flow by near the narrow range described flux values, for example can keep plasma body in the vacuum chamber with desirable state continuance, thereby can keep the optimum regime for film forming etc.
That is, the invention provides a kind of plasma control apparatus, it comprises: the first valve, be arranged on the first stream, and described the first stream is connected with the vacuum chamber that generates plasma body, and the importing gas stream that imports in the described vacuum chamber is crossed described the first stream; The first valve control part is controlled the aperture of described the first valve, so that import the flow amount of gaining the first rank of the described importing gas in the described vacuum chamber via described the first valve; The plasma monitoring device, the plasma intensity of the plasma body that measurement generates in described vacuum chamber; Second valve is arranged on the second stream, and described the second stream is connected or is connected with described vacuum chamber with described the first stream that is positioned at the downstream than described the first valve, and described importing gas stream is crossed described the second stream; And the second valve control part, according to the deviation of the measurement plasma intensity that is measured by described plasma monitoring device and predefined setting plasma intensity, the aperture of described second valve is controlled.At this, so-called " vacuum chamber " is the chamber that not only comprises the perfect vacuum, also comprises the concept that is decompressed to the chamber of suitable pressure in order to produce plasma body.
According to described plasma control apparatus, can be by being arranged on described the first valve on described the first stream, guarantee that at first first flow is as the flow that imports the importing gas in the vacuum chamber, and by being arranged on the described second valve on described the second stream, only control the flow corresponding with the deviation part of the plasma intensity that is measured by described plasma monitoring device.Therefore therefore, the flow that second valve is only controlled the importing gas corresponding with issuable deviation in the plasma intensity of measuring gets final product, so span of control is limited at certain scope, can select movable range narrow but have the valve of high responsiveness.Therefore, even be larger value for becoming the necessary optimum flow value of desirable plasma intensity, and in the little situation of permissible flow error, by the value of described first flow realization near optimum flow, by described the second flow control change part, also can realize High-speed Control thus.
In addition, plasma control apparatus of the present invention, owing to have described metering characteristics, so for example passing through in the situation of reactive sputtering method film forming, even the flux values of the reactant gas that should import is larger and the transitional region of the narrow range of the flux values of allowing, also can continue to maintain this transitional region.Therefore, compare with device in the past, can make film forming speed bring up to 5～6 times.
In order to prevent that thereby only but importing superfluous importing gas by described first flow can not realize desirable setting plasma intensity, perhaps prevent the problems such as second valve is fixed under full closing state, preferably: set described first flow, so that when only with described first flow described importing gas being imported described vacuum chamber, the measurement plasma intensity that is measured by described plasma monitoring device becomes than the little value of described setting plasma intensity.According to this plasma body control device, be reactant gas at described importing gas particularly, use in the situation of reactive sputtering method, plasmoid is shifted to transitional region from metal mode, can within the shorter time, carry out film forming.
In order easily to select the described second valve of high responsiveness, and easily improve the precision of the flow control of the importing gas that imports to described vacuum chamber, described the first valve control part is controlled the aperture of described the first valve, so that the second flow becomes the value less than described first flow, described the second flow is the flow that imports the described importing gas of described vacuum chamber via described the second stream, and described second valve and described second valve control part have than described the first valve and the high responsiveness of described the first valve control part.That is, the movable range of described second valve can less than the movable range of described the first valve, can be selected the valve of paying attention to responsiveness.At this, the responsiveness of so-called each valve and each valve control part be with for the relevant characteristic of the trace performance of the output valve of the target value of open loop or closed loop, such as comparing according to control evaluations of estimate such as overshoot and steady times.
For example, as the object lesson of the second valve of the high responsiveness with the transitional region that is applicable to keep the reactive sputtering method, can enumerate piezo electric valve.
As can correctly measuring described plasma intensity, easily keeping the embodiment of desirable plasmoid, can enumerate following plasma control apparatus, described plasma monitoring device is measured described plasma intensity according to the light intensity of the radiation of the plasma body in described vacuum chamber.
As for the plasma control apparatus that just existed in the past, can improve to the flow control ability of the importing gas of vacuum chamber importing, and can the Sustainable Control precedent such as the flow rate control device of the desirable plasmoids such as transitional region of reactive sputtering method can be following flow rate control device, this flow rate control device is used for plasma control apparatus, described plasma control apparatus comprises: the first valve, be arranged on the first stream, described the first stream is connected with the vacuum chamber that generates plasma body, and the importing gas stream that imports in the described vacuum chamber is crossed described the first stream; The first valve control part is controlled the aperture of described the first valve, so that import the flow amount of gaining the first rank of the described importing gas in the described vacuum chamber via described the first valve; And plasma monitoring device, the plasma intensity of the plasma body that measurement generates in described vacuum chamber, described flow rate control device comprises: second valve, be arranged on the second stream, described the second stream is connected or is connected with described vacuum chamber with described the first stream that is positioned at the downstream than described the first valve, and described importing gas stream is crossed described the second stream; And the second valve control part, according to the deviation of the measurement plasma intensity that is measured by described plasma monitoring device and predefined setting gas ions intensity, the aperture of described second valve is controlled.
According to described flow rate control device, by only the flow rate control device that comprises described second valve and described second valve control part is additional to the plasma control apparatus that just existed in the past, just can keep the transitional region of reactive sputtering method.
For example, for can be only by sequence of control being overwritten in the computer that consists of existing plasma control apparatus etc., just can control accurately the state of plasma body, as long as adopt following flow control with method, this flow control is used for plasma control apparatus with method, described plasma control apparatus comprises: the first valve, be arranged on the first stream, described the first stream is connected with the vacuum chamber that generates plasma body, and the importing gas stream that imports in the described vacuum chamber is crossed described the first stream; The plasma monitoring device, the plasma intensity of the plasma body that measurement generates in described vacuum chamber; And second valve, be arranged on the second stream, described the second stream is connected or is connected with described vacuum chamber with described first stream in the downstream that is positioned at described the first valve, described importing gas stream is crossed described the second stream, described flow control makes the first valve control part control the aperture of described the first valve with method, so that import the flow amount of gaining the first rank of the described importing gas in the described vacuum chamber via described the first valve, and described flow control makes the second valve control part according to the measurement plasma intensity that is measured by described plasma monitoring device and the deviation of predefined setting plasma intensity with method, and the aperture of described second valve is controlled.In addition, record described flow control with the storage media of program if having, then by using installation in the computer that consists of various plasma control apparatus new flow control, just can obtain described effect.
According to plasma control apparatus of the present invention and flow rate control device, flow through the flow of regulation by described the first valve, and by the flow of described second valve control by described plasma monitoring device the measurement plasma intensity that measures and the deviation part of setting plasma intensity, so although described second valve can use the narrow valve with high responsiveness of movable range.Therefore, even be in the little situation of large flow and permissible flow error at the flow that should flow into the importing gas in the vacuum chamber, also can be to import at a high speed the flow control of gas, for example, can continue to keep the transitional region that in the past is difficult to the reactive sputtering method kept.
Description of drawings
Fig. 1 is the synoptic diagram of the plasma control apparatus structure of expression an embodiment of the invention.
Fig. 2 is that expression is the synoptic diagram of the flow control concept of identical embodiment with Fig. 1.
Fig. 3 is the synoptic diagram that expression is additional to the flow rate control device of another embodiment of the present invention the situation of existing plasma control apparatus.
Fig. 4 is the synoptic diagram that represents an example of plasma control apparatus in the past.
Fig. 5 is the synoptic diagram that the thin film-forming method of expression reactive sputtering method and film forming speed change with respect to the flow of reactant gas.
Description of reference numerals
100 ... plasma control apparatus
200 ... flow rate control device
11 ... flowrate control valve (the first valve)
12 ... flow director (the first valve control part)
21 ... piezo electric valve (second valve)
22 ... piezo electric valve control part (second valve control part)
3 ... the plasma monitoring device
L1 ... the first stream
L2 ... the second stream
VC ... vacuum chamber
Embodiment
With reference to accompanying drawing an embodiment of the invention are described.
The plasma control apparatus 100 of present embodiment is used for by the reactive sputtering method, and the surface sediment target T of the body material B such as the wafer in being positioned over vacuum chamber VC or film and the compound of reactant gas carry out film forming.For example, as the example of described target T, Al, ITO, Si etc. can be listed, as the example of described reactant gas, oxygen and nitrogen etc. can be listed.In addition, use this plasma body control device 100, form the oxide compound of the material that consists of target T, the film of nitride on the surface of described body material B, carry out the film forming for the material of touch panel etc.
More particularly, as shown in Figure 1, described plasma control apparatus 100 among the conduct that imports in the vacuum chamber VC that generates plasma body imports the rare gas such as argon Ar and oxygen isoreactivity gas of gas, the flow of major control reactant gas.That is, described plasma control apparatus 100 comprises: flow control mechanism FC is arranged on the rare gas pipeline NGL and the described reactant gas pipeline RGL among the reactant gas pipeline RGL that is connected with described vacuum chamber VC; Plasma monitoring device 3 is monitored the state of the plasma body in the described vacuum chamber VC of the chamber that remains decompression state as inside; And control part C, according to the output signal from described plasma monitoring device 3, described flow control mechanism FC is controlled.
The below describes each several part.In addition, in the following description, so-called flow is the term of putting down in writing as comprising any one concept in mass rate and the volumetric flow rate.
The inside of described vacuum chamber VC keeps high vacuum, accommodates in the inside of vacuum chamber VC: target T is the metals such as aluminium that will enclose as film, the piece of ITO, Si etc.; And body material B, be oppositely arranged with described target T.Between described target T and described body material B, from described rare gas pipeline NGL and described reactant gas pipeline RGL, flow into respectively argon Ar and reactant gas.In addition, by to applying high-tension voltage application portion etc. between described target T and the described body material B, generate plasma body from the gas that imports.
Be provided with mass flow controller 4 at the pipe arrangement that consists of described rare gas pipeline NGL, so that in described vacuum chamber VC, import argon Ar with certain flow.
Described reactant gas pipeline RGL is connected with vacuum chamber VC, and reactant gas pipeline RGL comprises: the first stream L1, flow through the reactant gas that imports in the described vacuum chamber VC; And the second stream L2, form in parallel with respect to described the first stream L1.
Be provided with mass flow controller 1 on described the first stream L1, this mass flow controller 1 is used for crossing with certain flow continuous flow all the time the first flow of regulation.The inside of described mass flow controller 1 comprises at least: flow sensor 13; The flowrate control valve 11 that is equivalent to the first valve; And flow director 12, control the aperture of described flowrate control valve 11, described mass flow controller 1 consists of an assembly.Described flow director 12 is equivalent to the first valve control part, such as bringing into play its function by minicomputer or switchboard etc.More particularly, the aperture of 12 pairs of described flowrate control valves 11 of described flow director is carried out feedback control, so that the measuring flow that is measured by described flow sensor 13 and diminish as the deviation between the first flow of predefined setting flow.In addition, the setting flow of setting in flow director 12 can self be inputted by described mass flow controller 1, also can carry out suitable change by for example outside input from control part C described later.Like this, the mass flow controller 1 that is arranged on the first stream L1 can carry out flow control, so that by self the flow amount of gaining the first rank of reactant gas of flowrate control valve 11, the reactant gas of first flow continues to flow in the described vacuum chamber VC with substantially certain flow so can make at least.
Described the second stream L2 is with respect to described the first stream, from the upstream branch of mass flow controller 1, and again collaborates in the downstream of this mass flow controller 1.Be provided with the piezo electric valve 21 that is equivalent to second valve at described the second stream L2.Described piezo electric valve 21 is compared with described flowrate control valve 11, and movable range is narrow, and the flow range that can flow through is little.But the combination of described piezo electric valve 21 and piezo electric valve control part 22 described later has higher responsiveness than the combination of described flowrate control valve 11 and described flow director 12.Namely, be arranged at the piezo electric valve 21 on described the second stream L2, so that with compare by the first flow of described flowrate control valve 11, the second a small amount of flow is flow through, and only to wanting to flow into the target flow of described vacuum chamber VC and the difference of first flow is partly carried out flow control.
Like this, by being arranged at the described mass flow controller 1 and the described piezo electric valve 21 that is arranged on described the second stream L2 on described the first stream L1, consist of flow control mechanism FC, this flow control mechanism FC is used for the flow of the reactant gas that imports described vacuum chamber VC is controlled.
Described plasma monitoring device 3 with described target T and described body material B between relative mode be arranged in the described vacuum chamber VC, plasma monitoring device 3 comprises: light acquisition unit (daylighting section), obtain the light of the plasma body of self-generating; Photomultiplier 33 is connected with described daylighting section 31 by optical fiber 32, will be converted to from the light of plasma body the electrical signal corresponding with its intensity; And the plasma intensity calculating part, according to the electrical signal from described photomultiplier 33, export the plasma intensity of described plasma body.
Described control part C realizes its function by so-called computer, described computer comprises CPU, storer, A/D, D/A converter, input/output interface etc., control part C brings into play the function as piezo electric valve control part 22 at least according to the program that is stored in the described storer.
Described piezo electric valve control part 22 is equivalent to the second valve control part, according to the deviation of the measurement plasma intensity that is measured by described plasma monitoring device 3 and predefined setting plasma intensity, controls the aperture of described piezo electric valve 21.
Described setting plasma intensity is to measure in advance in the preparing in advance before the manufacturing of actual product begins and the value determined.More particularly, the flow of the reactant gas that imports in making from described reactant gas pipeline RGL to described vacuum chamber VC little by little increases, and the plasma intensity when thin film-forming method is become from the metal mode to the pattern of reactivity midway transitional region is decided to be the setting plasma intensity.For example, if the flow at reactant gas becomes the flow that is suitable for becoming transitional region, the plasma intensity that is then measured by described plasma monitoring device 3 becomes in the peaked situation, and the plasma intensity of the maximum that will observe in preparing in advance is set as described setting plasma intensity.In addition, the first-class value of setting as the flow that should flow through in the described mass flow controller 1, it is the little value of appropriate flow that is compared to the flow of the reactant gas when becoming maximum plasma intensity, that is, make first-class value for than the smaller value of flow that becomes the reactant gas when setting plasma intensity.More preferably, as long as with described first flow and become poor between the appropriate flow of described setting plasma intensity, set for less than getting final product via the peak flow that described the second stream L2 flows in the described vacuum chamber VC by described piezo electric valve 21.In other words, set first flow, so that the flow of the difference of described appropriate flow and described first flow, be converged in can carrying out in the scope of flow control that movable range according to described piezo electric valve 21 determines.
Regarding to is down becoming in the situation of described transitional region, and the action of the described piezo electric valve control part 22 when plasma intensity becomes maximum value is described more specifically.Flow into the state in the described vacuum chamber VC from remain on the reactant gas that only makes first flow by described mass flow controller 1, described piezo electric valve control part 22 only increases for the deviation of described measurement plasma intensity and described setting plasma intensity the aperture of described piezo electric valve 21 to carry out the feedback quantity that obtains after PID calculates.Plasma intensity in vacuum chamber VC becomes to be set after the intensity, between described measurement plasma intensity and described setting plasma intensity, again occured in the situation of deviation, described piezo electric valve control part 22 changes the aperture change direction that makes described piezo electric valve 21 according to the increase and decrease tendency that deviation described piezo electric valve 21 before occurs again.Namely, described piezo electric valve control part 22, the aperture of described piezo electric valve 21 be in the measurement plasma intensity that is measured by described plasma monitoring device 3 under the state that increases tendency become set plasma intensity after, again produce in the situation of deviation, make the aperture of described piezo electric valve 21 only reduce to carry out the feedback quantity that obtains after PID calculates for deviation.Otherwise, the aperture of described piezo electric valve 21 be in the measurement plasma intensity that is measured by described plasma monitoring device 3 under the state that reduces to be inclined to become set plasma intensity after, again produce in the situation of deviation, described piezo electric valve control part 22 only increases for deviation the aperture of described piezo electric valve 21 to carry out the feedback quantity that obtains after PID calculates.For example, can obtain the increase and decrease tendency relevant with the aperture of described piezo electric valve 21 according to time variation amount or time diffusion, the aperture of 22 pairs of described piezo electric valves 21 of described piezo electric valve control part is controlled.
Then, generating plasma body via transitional region from metal mode during pattern of reactivity, is that the action of the described piezo electric valve control part 22 in monotone increasing or the monotone decreasing situation describes for the plasma intensity of observing from the plasma body that generates during described.For example, can consider following situation, in metal mode, increment rate for the plasma intensity of the flow that flows into the reactant gas in the vacuum chamber VC is little, in transitional region, the increment rate of plasma intensity sharply rises, and again diminishes in the increment rate of pattern of reactivity applying plasma intensity.
Under the flow monotone increasing or dull situation about reducing of plasma intensity with respect to the reactant gas in the inflow vacuum chamber VC, only by utilizing the arbitrarily plasma intensity of testing the transitional region that obtains in advance to be set as the setting plasma intensity, this setting plasma intensity any one value of plus or minus will occur with the deviation of measuring plasma intensity, thus the controlling party that can determine uniquely described piezo electric valve 21 to.Therefore, need not to check described increase and decrease tendency, described piezo electric valve control part 22 just can be controlled the aperture of described piezo electric valve 21 by common feedback control.
In addition, since according to by described plasma monitoring device 3 actual measurements to the measurement plasma intensity with the deviation of setting plasma intensity described piezo electric valve 21 is controlled, so can carry out flow control according to the amount of direct representation plasmoid, thereby can easily thin film-forming method be continued to remain on transition state.In addition, owing to do not cross the gas of certain flow described mass flow controller 1 is not fed back the mode continuous flow of measuring plasma intensity and setting the deviation of plasma intensity, so can easily keep the stability of the flow control system of reactant gas.
In addition, in the plasma control apparatus 100 of present embodiment, for the flow of reactant gas, to be set as by the first flow that described mass flow controller 1 flows through with certain flow the little flow of flow of setting plasma intensity than becoming, and then control so that utilize the second flow that flows through by piezo electric valve 21 to make plasma intensity become the setting plasma intensity, transfer to transitional region so thin film-forming method can be controlled to from metal mode.Assumed response gas imports in the vacuum chamber VC superfluously, if thin film-forming method is shifted to transitional region from pattern of reactivity, then target T self and reactant gas react, form oxide film etc. at target T, cause being difficult to impacting out ion from target T, film forming speed also can be slack-off within a very long time.On the other hand, present embodiment is owing to can make thin film-forming method transfer to transitional region from metal mode, and can make thin film-forming method be stabilized in this state, so compare with the situation that is stabilized in pattern of reactivity in the past, can make with 5～6 times film forming speed by the reaction of the ion of target T and reactant gas and the compound that generates is deposited in and carries out film forming on the body material B.
The below describes other embodiments of the present invention.In the following description, all give identical Reference numeral with parts corresponding to described embodiment.
In embodiment shown in Figure 3, by flow rate control device being additional to existing plasma control apparatus 100A, can improve the flow control performance, and thin film-forming method can be remained on transitional region.
Shown in Figure 4 such as what illustrated in background technology, described existing plasma control apparatus 100A comprises: rare gas pipeline NGL imports rare gas in the vacuum chamber VC that generates plasma body; Reactant gas pipeline RGL imports reactant gas in described vacuum chamber VC; Plasma monitoring device 3A measures the intensity of the plasma body that produces in described vacuum chamber VC; And control part C, according to the plasma intensity from described plasma monitoring device 3A output, be controlled at the flow of the reactant gas that flows among the described reactant gas pipeline RGL.At this, the described reactant gas pipeline RGL of plasma control apparatus 100A in the past only has a stream, is provided with the mass flow controller 1A of flow for the control reactant gas at this stream.In addition, described control part C carries out PID according to the measurement plasma intensity that is measured by described plasma monitoring device 3A and the deviation of setting plasma intensity and calculates, and the flow instruction value is inputted described mass flow controller 1A.According to the deviation between this flow instruction value and the measuring flow value that measures, the aperture of the flowrate control valve of described mass flow controller 1A inside is controlled.
In order to append the flow rate control device of the present invention 200 that possesses second valve and second valve control part at described existing plasma control apparatus 100A, as shown in Figure 3, to be provided with the stream of described mass flow controller 1A as the first stream L1, and be formed with the second stream L2, this the second stream L2 and described the first stream L1 are arranged in parallel, at downstream and described the first stream L1 interflow of described mass flow controller 1A.In addition, be provided with piezo electric valve 21 as second valve at described the second stream L2, the new program of storage in the storer of described control part C, consist of thus the second valve control part, this second valve control part is controlled the aperture of described piezo electric valve 21 according to measurement plasma intensity and the deviation of setting plasma intensity from described plasma monitoring device 3 outputs.In addition, remove being connected between described mass flow controller 1A and the described control part C, so that do not carry out exchange relevant with plasma intensity between described mass flow controller 1A and the described control part C, and set the reactant gas that in described flow director 1A, flows through constantly certain flow with first flow for.
For existing plasma control apparatus 100A, only by piezo electric valve 21 and install to be used for the piezo electric valve control part 22 that the program of this piezo electric valve 21 of control consists of, just can realize the function identical with described embodiment cardinal principle.That is, by in existing plasma control apparatus, using flow rate control device of the present invention, thin film-forming method can be continued to remain on transitional region, and can make film forming speed become in the past 5～6 times.
The below describes other embodiment.
In said embodiment, to carry out the reactive sputtering method as prerequisite, the situation that the flow that imports the reactant gas in the vacuum chamber is controlled is illustrated, and still, structure of the present invention also can be used for the flow of the rare gas such as argon Ar that import is controlled.In addition, plasma control apparatus of the present invention and flow rate control device are not only limited to especially for the reactive sputtering method yet, can be used for the controlling plasma of common sputtering method yet.In other words, the so-called gas that imports is not particularly limited in reactant gas, so long as be used for controlling by the flow in the importing vacuum chamber state of the plasma body in the vacuum chamber, then the control of which type of gas can be used the present invention.
In said embodiment, be provided with the second stream in the mode with the first passage confluent, but the importing gas that flows through the first stream and the importing gas that flows through the second stream are collaborated in vacuum chamber.In addition, as long as the junction of two streams of described the second stream and the first stream is positioned at the downstream of described the first valve, and then by making described junction of two streams near vacuum chamber, can make the precision that in fact imports the importing gas flow in the vacuum chamber better.In addition, described second valve also is not limited to piezo electric valve, for example, as long as second valve is that responsiveness is higher than the valve that is located at the first valve on described the first stream.
In addition, the such equipment that carries out flow control of the mass flow controller on described the first stream also can not be the equipment that forms assembly, installs in mode independently and can be each equipment.That is, the first valve and flow measuring sensor can be arranged on respectively on the first stream independently, by the function of described control part performance as the first valve control part.In addition, described the first valve control part and second valve control part can utilize computer to consist of at a place, and described the first valve control part also can be realized described function by being arranged at each different minicomputers that the place is set etc. with the second valve control part.
In addition, described plasma monitoring device can be not only according to the device of measuring plasma intensity from the light intensity of plasma body radiation, can also be the device of measuring the intensity of plasma body according to the variation of the impedance of executing alive power supply for generation of plasma body etc.
In the action of described embodiment, with according to the state of plasma body from metal mode to transitional region, the mode that changes of the order of pattern of reactivity carried out importing the flow control of gas, but on the contrary, also can keep the state of plasma body with the path of zone, metal mode from the pattern of reactivity to the transition.That is, can at first the importing gas of slightly Duoing than the flow that becomes transitional region be imported in the vacuum chamber, according to the plasma intensity that measures, reduce gradually the flow that imports gas by second valve.
In addition, in said embodiment, carry out feedback control, so that the mass flow controller of being located on the first stream always remains necessarily the flow that flows through via himself with first flow, but also can and import the kind etc. of gas according to film formation process, change first flow according to the time.In addition, the first valve of being located on the first stream is not that certain needs carry out feedback control yet, for example, can carry out flow control by feed forward control, so that remain first flow yet.In addition, the aperture of described the first valve can only continue to be maintained in the regulation aperture corresponding with first flow.For example, described the first valve control part can be controlled to be in the aperture with described the first valve after the regulation aperture, does not carry out any control, and the aperture of described the first valve is fixed on the regulation aperture.
In addition, only otherwise violate aim of the present invention, certainly can carry out the combination of various distortion and embodiment.
Claims (11)
1. plasma control apparatus is characterized in that comprising:
The first valve is arranged on the first stream, and described the first stream is connected with the vacuum chamber that generates plasma body, and the importing gas stream that imports in the described vacuum chamber is crossed described the first stream;
The first valve control part is controlled the aperture of described the first valve, so that import the flow amount of gaining the first rank of the described importing gas in the described vacuum chamber via described the first valve;
The plasma monitoring device, the plasma intensity of the plasma body that measurement generates in described vacuum chamber;
Second valve is arranged on the second stream, and described the second stream is connected or is connected with described vacuum chamber with described the first stream that is positioned at the downstream than described the first valve, and described importing gas stream is crossed described the second stream; And
The second valve control part according to the deviation of the measurement plasma intensity that is measured by described plasma monitoring device and predefined setting plasma intensity, is controlled the aperture of described second valve.
2. plasma control apparatus according to claim 1, it is characterized in that: set described first flow, so that when only with described first flow described importing gas being imported described vacuum chamber, the measurement plasma intensity that is measured by described plasma monitoring device becomes than the little value of described setting plasma intensity.
3. plasma control apparatus according to claim 1 and 2, it is characterized in that: described the first valve control part is controlled the aperture of described the first valve, so that the second flow becomes the value less than described first flow, described the second flow is the flow that imports the described importing gas of described vacuum chamber via described the second stream
Described second valve and described second valve control part have than described the first valve and the high responsiveness of described the first valve control part.
4. plasma control apparatus according to claim 1 and 2, it is characterized in that: described second valve is piezo electric valve.
5. plasma control apparatus according to claim 3, it is characterized in that: described second valve is piezo electric valve.
6. plasma control apparatus according to claim 1 and 2 is characterized in that: described plasma monitoring device is measured described plasma intensity according to the light intensity of the radiation of the plasma body in described vacuum chamber.
7. plasma control apparatus according to claim 3 is characterized in that: described plasma monitoring device is measured described plasma intensity according to the light intensity of the radiation of the plasma body in described vacuum chamber.
8. plasma control apparatus according to claim 4 is characterized in that: described plasma monitoring device is measured described plasma intensity according to the light intensity of the radiation of the plasma body in described vacuum chamber.
9. plasma control apparatus according to claim 5 is characterized in that: described plasma monitoring device is measured described plasma intensity according to the light intensity of the radiation of the plasma body in described vacuum chamber.
10. flow rate control device, it is characterized in that: this flow rate control device is used for plasma control apparatus, described plasma control apparatus comprises: the first valve, be arranged on the first stream, described the first stream is connected with the vacuum chamber that generates plasma body, and the importing gas stream that imports in the described vacuum chamber is crossed described the first stream; The first valve control part is controlled the aperture of described the first valve, so that import the flow amount of gaining the first rank of the described importing gas in the described vacuum chamber via described the first valve; And the plasma monitoring device, the plasma intensity of the plasma body that measurement generates in described vacuum chamber,
Described flow rate control device comprises:
Second valve is arranged on the second stream, and described the second stream is connected or is connected with described vacuum chamber with described the first stream that is positioned at the downstream than described the first valve, and described importing gas stream is crossed described the second stream; And
The second valve control part according to the deviation of the measurement plasma intensity that is measured by described plasma monitoring device and predefined setting gas ions intensity, is controlled the aperture of described second valve.
11. flow control method, it is characterized in that: this flow control is used for plasma control apparatus with method, described plasma control apparatus comprises: the first valve, be arranged on the first stream, described the first stream is connected with the vacuum chamber that generates plasma body, and the importing gas stream that imports in the described vacuum chamber is crossed described the first stream; The plasma monitoring device, the plasma intensity of the plasma body that measurement generates in described vacuum chamber; And second valve, being arranged on the second stream, described the second stream is connected or is connected with described vacuum chamber with described first stream in the downstream that is positioned at described the first valve, and described importing gas stream is crossed described the second stream,
Described flow control makes the first valve control part control the aperture of described the first valve with method, so that import the flow amount of gaining the first rank of the described importing gas in the described vacuum chamber via described the first valve, and described flow control makes the second valve control part according to the measurement plasma intensity that is measured by described plasma monitoring device and the deviation of predefined setting plasma intensity with method, and the aperture of described second valve is controlled.
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| JP2011205102A JP6010288B2 (en) | 2011-09-20 | 2011-09-20 | Plasma control device, flow control device used in plasma control device, and flow control program |
| JP2011-205102 | 2011-09-20 |
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| CN103014637A true CN103014637A (en) | 2013-04-03 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015054908A1 (en) * | 2013-10-15 | 2015-04-23 | 深圳市华星光电技术有限公司 | Transfer roller having adjustable vacuum suction force and film adhering method using the transfer roller |
| CN109811326A (en) * | 2019-01-17 | 2019-05-28 | 上海大学 | Utilize the method for HIPIMS method combination plated film intelligent monitoring refueling system prepare compound thin-film material |
| CN111676468A (en) * | 2020-06-10 | 2020-09-18 | 长飞光纤光缆股份有限公司 | Optical fiber prefabricated part, multimode optical fiber and preparation method thereof |
| CN112947051A (en) * | 2020-12-23 | 2021-06-11 | 苏州汉霄等离子体科技有限公司 | Control method and device for radio frequency plasma powder making equipment, storage medium and electronic equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11144337A (en) * | 1997-11-07 | 1999-05-28 | Ricoh Co Ltd | Apparatus for producing optical recording medium, production of optical recording medium and optical recording medium |
| JP2004237548A (en) * | 2003-02-05 | 2004-08-26 | Bridgestone Corp | Method for manufacturing rubbery composite material |
| CN1718848A (en) * | 2005-07-15 | 2006-01-11 | 深圳市豪威光电子设备有限公司 | Method and system of preparing ITO film using medium frequency reaction magnetic controlled sputtering indium tin alloy target |
| JP2010090458A (en) * | 2008-10-10 | 2010-04-22 | Agc Techno Glass Co Ltd | Sputtering apparatus |
-
2011
- 2011-09-20 JP JP2011205102A patent/JP6010288B2/en active Active
-
2012
- 2012-08-20 CN CN2012102973887A patent/CN103014637A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11144337A (en) * | 1997-11-07 | 1999-05-28 | Ricoh Co Ltd | Apparatus for producing optical recording medium, production of optical recording medium and optical recording medium |
| JP2004237548A (en) * | 2003-02-05 | 2004-08-26 | Bridgestone Corp | Method for manufacturing rubbery composite material |
| CN1718848A (en) * | 2005-07-15 | 2006-01-11 | 深圳市豪威光电子设备有限公司 | Method and system of preparing ITO film using medium frequency reaction magnetic controlled sputtering indium tin alloy target |
| JP2010090458A (en) * | 2008-10-10 | 2010-04-22 | Agc Techno Glass Co Ltd | Sputtering apparatus |
Non-Patent Citations (3)
| Title |
|---|
| JOHN FAHLTEICH ET AL: ""Permeation barrier properties of thin oxide films on flexible polyer substrates"", 《THIN SOLID FILMS》 * |
| 姜辛等: "《透明导电氧化物薄膜》", 31 October 2008, 高等教育出版社 * |
| 汉斯.琼彻.格雷瑟: "《大面积玻璃镀膜》", 30 April 2006, 上海交通大学出版社 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015054908A1 (en) * | 2013-10-15 | 2015-04-23 | 深圳市华星光电技术有限公司 | Transfer roller having adjustable vacuum suction force and film adhering method using the transfer roller |
| US9370919B2 (en) | 2013-10-15 | 2016-06-21 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Vacuum suction adjustable transfer roller and film attachment method using the transfer roller |
| CN109811326A (en) * | 2019-01-17 | 2019-05-28 | 上海大学 | Utilize the method for HIPIMS method combination plated film intelligent monitoring refueling system prepare compound thin-film material |
| CN111676468A (en) * | 2020-06-10 | 2020-09-18 | 长飞光纤光缆股份有限公司 | Optical fiber prefabricated part, multimode optical fiber and preparation method thereof |
| CN112947051A (en) * | 2020-12-23 | 2021-06-11 | 苏州汉霄等离子体科技有限公司 | Control method and device for radio frequency plasma powder making equipment, storage medium and electronic equipment |
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| JP2013069419A (en) | 2013-04-18 |
| JP6010288B2 (en) | 2016-10-19 |
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