CN103000543A - High-reliability bonding method - Google Patents

High-reliability bonding method Download PDF

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Publication number
CN103000543A
CN103000543A CN2012105493218A CN201210549321A CN103000543A CN 103000543 A CN103000543 A CN 103000543A CN 2012105493218 A CN2012105493218 A CN 2012105493218A CN 201210549321 A CN201210549321 A CN 201210549321A CN 103000543 A CN103000543 A CN 103000543A
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CN
China
Prior art keywords
bonding
wire
line
bonding method
reliability
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2012105493218A
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Chinese (zh)
Inventor
张红波
李春媚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Horizon Semiconductor (shenyang) Co Ltd
Original Assignee
Horizon Semiconductor (shenyang) Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Horizon Semiconductor (shenyang) Co Ltd filed Critical Horizon Semiconductor (shenyang) Co Ltd
Priority to CN2012105493218A priority Critical patent/CN103000543A/en
Publication of CN103000543A publication Critical patent/CN103000543A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4905—Shape
    • H01L2224/49051—Connectors having different shapes
    • H01L2224/49052—Different loop heights
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

The invention belongs to the technical field of integrated circuit manufacture and particularly relates to a high-reliability bonding method which is suitable for bonding processes such as gold wire ball bonding, copper wire ball bonding and aluminum ball bonding. The high-reliability bonding method includes bonding a first wire (1) and a second wire (2) abreast with a height difference D. The high-reliability bonding method is simple to operate and greatly reducing bonding wire broken rate due to the fact that external objects cannot be abraded with the lower wire before the higher wire is abraded to be broken due to the fact that the first wire and the second wire are different in height.

Description

High reliability bonding method
Technical field
The invention belongs to the ic manufacturing technology field, relate in particular to a kind of high reliability bonding method that is applicable to the bonding technologies such as gold ball bonding, copper ball bonding, aluminium wire pressure welding.
Background technology
Along with the progress of integrated circuit technique, more and more high to the integrated level requirement of hybrid circuit.Any production technology personnel that are engaged in the liquid application point rubber seal dress of chip surface recognize, must keep a close eye on the liquid bottom filling process of such devices.Referring to Fig. 1, liquid glue applies encapsulation, around liquid EMC is injected into bonding line from the top, be subject to gravity and capillary affect colloid can be enclosed in bonding line around, then make colloid curing by methods such as high temperature or ultraviolet ray irradiations.Lean on gravity and the moulding of tension force nature because be; its surface distance bonding line of colloid apical position is very near, and in this position, the protection of colloid para-linkage line is comparatively weak; if have exterior object to follow the packaging body friction at the bonding line apical position, just be easy to damage bonding line even rub bonding line.Conventional two-wire bonding technology, two highly identical lines be bonding (referring to Fig. 2 and Fig. 3) side by side, because two line height are identical, at peak, colloid almost is identical to their protection intensity merchandiser line bonding mode.If because the exterior object friction is broken, two lines can be rubbed simultaneously so.
Summary of the invention
The present invention is intended to overcome the deficiencies in the prior art part and provides a kind of simple to operate, can significantly reduce the high reliability bonding method that bonding line is rubbed probability.
For achieving the above object, the present invention realizes like this.
A kind of high reliability bonding method can be implemented: side by side bonding number one line and No. second line as follows; There is difference in height D when described number one line and No. second line bonding.
The present invention is simple to operate, because the number one line is different from No. second line height, the colloid top is far away apart from that slightly shorter line, if being arranged, exterior object follow packaging body to rub, can rub with that higher line first so, before not rubbing this line, exterior object can not followed that shorter line friction, and the broken string probability of bonding can significantly reduce like this.
Description of drawings
The invention will be further described below in conjunction with the drawings and specific embodiments.Protection scope of the present invention not only is confined to the statement of following content.
Fig. 1 applies encapsulation injecting glue effect schematic diagram for existing liquid glue.
Fig. 2 is existing conventional two-wire bonding schematic diagram.
Fig. 3 is existing conventional two-wire bonding injecting glue effect schematic diagram.
Fig. 4 is two-wire bonding schematic diagram of the present invention.
Fig. 5 is bonding effect schematic diagram of the present invention.
Among the figure: 1, number one line; 2, No. second line; 3, line; 4, EMC; 5, with packaging body the friction object occurs.
Embodiment
Referring to Fig. 4 and shown in Figure 5, high reliability bonding method can be implemented: side by side bonding number one line 1 and No. second line 2 as follows; There is difference in height D when described number one line 1 and No. second line 2 bonding.Referring to shown in Figure 5,5 is with packaging body the friction object to occur.Before not rubbing this line, with packaging body friction object 5 occuring can be with that shorter line friction, and the broken string probability of bonding can significantly reduce like this.
The present invention is a kind of bonding method that liquid glue applies encapsulation that is applicable to, and this type of bonding method can reduce because of the probability of following the exterior object friction to break, applicable to bonding technologies such as gold ball bonding, copper ball bonding, aluminium wire pressure weldings.
Be with being appreciated that, more than about specific descriptions of the present invention, only for the present invention being described and being not to be subject to the described technical scheme of the embodiment of the invention, those of ordinary skill in the art is to be understood that, still can make amendment or be equal to replacement the present invention, to reach identical technique effect; Use needs as long as satisfy, all within protection scope of the present invention.

Claims (1)

1. one kind high reliability bonding method is characterized in that, implements as follows: side by side bonding number one line (1) and No. second line (2); There is difference in height D when described number one line (1) and No. second line (2) bonding.
CN2012105493218A 2012-12-18 2012-12-18 High-reliability bonding method Pending CN103000543A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2012105493218A CN103000543A (en) 2012-12-18 2012-12-18 High-reliability bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2012105493218A CN103000543A (en) 2012-12-18 2012-12-18 High-reliability bonding method

Publications (1)

Publication Number Publication Date
CN103000543A true CN103000543A (en) 2013-03-27

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CN2012105493218A Pending CN103000543A (en) 2012-12-18 2012-12-18 High-reliability bonding method

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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5359227A (en) * 1991-07-12 1994-10-25 Vlsi Technology, Inc. Lead frame assembly and method for wiring same
CN1218290A (en) * 1997-11-21 1999-06-02 三星电子株式会社 Semiconductor integrated circuit device having dummy bonding wires
US20020036355A1 (en) * 2000-07-31 2002-03-28 Koninklijke Philips Electronics N.V. Semiconductor devices
CN2681350Y (en) * 2003-10-16 2005-02-23 威盛电子股份有限公司 Chip packaging arrangement and electric connection structure between chip and base plate
US20050205995A1 (en) * 2004-03-18 2005-09-22 Denso Corporation Wire bonding method and semiconductor device
CN1773699A (en) * 2004-11-09 2006-05-17 三星电子株式会社 Integrated circuit chip package having a ring-shaped silicon decoupling capacitor
CN1964009A (en) * 2005-11-09 2007-05-16 飞思卡尔半导体公司 A stand of wire loop
US20090108425A1 (en) * 2007-10-30 2009-04-30 Samsung Electronics Co. Ltd. Stacked package and method of manufacturing the same
US20120155049A1 (en) * 2010-12-17 2012-06-21 Tessera Research Llc Enhanced stacked microelectronic assemblies with central contacts

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5359227A (en) * 1991-07-12 1994-10-25 Vlsi Technology, Inc. Lead frame assembly and method for wiring same
CN1218290A (en) * 1997-11-21 1999-06-02 三星电子株式会社 Semiconductor integrated circuit device having dummy bonding wires
US20020036355A1 (en) * 2000-07-31 2002-03-28 Koninklijke Philips Electronics N.V. Semiconductor devices
CN2681350Y (en) * 2003-10-16 2005-02-23 威盛电子股份有限公司 Chip packaging arrangement and electric connection structure between chip and base plate
US20050205995A1 (en) * 2004-03-18 2005-09-22 Denso Corporation Wire bonding method and semiconductor device
CN1773699A (en) * 2004-11-09 2006-05-17 三星电子株式会社 Integrated circuit chip package having a ring-shaped silicon decoupling capacitor
CN1964009A (en) * 2005-11-09 2007-05-16 飞思卡尔半导体公司 A stand of wire loop
US20090108425A1 (en) * 2007-10-30 2009-04-30 Samsung Electronics Co. Ltd. Stacked package and method of manufacturing the same
US20120155049A1 (en) * 2010-12-17 2012-06-21 Tessera Research Llc Enhanced stacked microelectronic assemblies with central contacts

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Application publication date: 20130327