CN103000507B - A kind of middle large size chip improves the manufacture method of brightness and yield - Google Patents
A kind of middle large size chip improves the manufacture method of brightness and yield Download PDFInfo
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- CN103000507B CN103000507B CN201210500762.9A CN201210500762A CN103000507B CN 103000507 B CN103000507 B CN 103000507B CN 201210500762 A CN201210500762 A CN 201210500762A CN 103000507 B CN103000507 B CN 103000507B
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- cutting
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- large scale
- backlight unit
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Abstract
The invention belongs to LED chip technical field, specifically disclose and a kind ofly adopt back side stealth cutting and depth of cut is greater than the cutting technique of chip thickness 1/2, solve and cause the technical problems such as yield is on the low side, brightness is on the low side because of oblique segmentation problem.Because cutting position is close to chip front side, effectively can reduce the deviation of cutting position and actual cracked open position when bursting apart, relatively known cutting mode, the energy of use is less, and cutting vestige color is more shallow, and the uptake of light is less.Improve the problem that stealthy cutting yield is low, and the product of more known stealthy cutting mode cutting has a certain upgrade in brightness.
Description
[technical field]
The invention belongs to semi-conductor LED chips technical field, relate to light-emitting diode chip for backlight unit manufacturing process, refer in particular to high-brightness LED chip and manufacture craft thereof.
[background technology]
Because the wave-length coverage of super brightness GaN sapphire LED is between 380nm to 540nm, of many uses, comprise the colour display of indoor and outdoor, traffic signals instruction, LCD back-illumination source and white illumination light source etc., but expand rapidly in its production scale, in process that cost constantly reduces, the cutting of GaN/ sapphire LED chip is one of technical barrier needing to solve always.This is because GaN/ sapphire is than general GaAs, the compound semiconductor materials such as GaP want hard many, very big with wheel cutter cutting (dicingsaw) wearing and tearing, cut people and measure very micro-, Japanese Ya company in 1994 takes the lead in diamond cutter being used for the cutting of GaN/ sapphire LED chip.Since at the beginning of 21 century, external and China Taiwan adopts laserscribing gradually in GaN device large-scale production.Compared with diamant scribing, laser scribing is with the obvious advantage: be first that laser scribing output is high; Secondly the rate of finished products of laser scribing is high, and laser scribing is full automatic working, and human factor impact is little, and a people can operate multiple devices, therefore its stability and repeatability guaranteed.Because laser scratch width is less than 5um, therefore the width of Cutting Road also can reduce, and so just can increase the tube core number in unit are.Improving and improving of LED chip cutting technique, is significant for LED industry large-scale production.Its status is consolidated increasingly, there is no and can replace.Certain laser scribing also existing defects, can make die light overdamp be about lO% exactly.In view of this, emerging laserscribing starts to continue to bring out, and has started to show its advantage, as cutting techniques such as stealth cuttings.The application improves the low problem of stealthy cutting yield, and the product of more known stealthy cutting mode cutting has a certain upgrade in brightness.
[summary of the invention]
In cutting for cutting existence stealthy in prior art, during large-size thick 120um above chip, cutting position and cracked open position have relatively large deviation to cause chip cutting bad, the problems such as chip brightness is on the low side, the object of this invention is to provide a kind of have solve because oblique segmentation problem causes the cutting mode of the problems such as yield is on the low side, brightness is on the low side.
1, to achieve these goals, a kind of cutting manufacture method improving the middle large scale diode chip for backlight unit of brightness and yield provided by the present invention, comprise: n type semiconductor layer, be formed in the luminescent layer on n type semiconductor layer, be formed in the p type semiconductor layer on luminescent layer, be formed in the transparency conducting layer on p type semiconductor layer, the N electrode forming P electrode over transparent conductive layer and be formed on n type semiconductor layer, DBR optical reflectance coating is coated with at sapphire backsides, chip is of a size of middle large scale, incised layer is positioned at chip internal, and the degree of depth of incised layer distance chip back is greater than 1/2 of chip thickness.
The thickness of middle large scale diode chip for backlight unit is between 120 microns to 250 microns, and middle large scale diode chip for backlight unit is of a size of more than 10mil*23mil chip.The depth of cut of middle large scale diode chip for backlight unit is 70 microns ~ 200 microns, and the cutting width of middle large scale diode chip for backlight unit is 15 microns ~ 30 microns.
Compared with prior art, beneficial effect of the present invention is: because incised layer is positioned at chip internal in the present invention, and incised layer position is close to chip front side, adopt such cutting mode, cutting position is more close from chip front side, effectively can reduce the deviation of cutting position and actual cracked open position when bursting apart, and the energy used due to the relatively known cutting mode of which is less, cutting vestige color is more shallow, the uptake of less light.
[accompanying drawing explanation]
Fig. 1 is the schematic diagram of stealthy cut lengths and state in a preferred embodiment of the invention.
[specific embodiment]
Below in conjunction with accompanying drawing, the invention will be further described.
Figure 1 shows that the schematic diagram after the stealth cutting of a preferred embodiment of the invention chips back side.1 is diode wafer, and 2 is the back side of diode wafer, and 3 is DBR optical reflectance coating, and 4 is the incised layer after the stealth cutting of the back side, and incised layer 4 is positioned at the inside of diode wafer 2.DBR optical reflectance coating 3 is plated in the back side 2 of sapphire 1, and wafer 1 is of a size of middle large scale, thickness=L1+L2=145.65 micron, and the stealthy incised layer 4 in the back side, apart from the degree of depth L2=86.93 micron at the back side 2 of wafer 1, is greater than 1/2 of chip 1 thickness.
Claims (6)
1. improve a middle large scale diode chip for backlight unit cutting manufacture method for brightness and yield, it is characterized in that: be coated with DBR optical reflectance coating at sapphire backsides, incised layer is positioned at chip internal, and the degree of depth of incised layer distance chip back is greater than 1/2 of chip thickness.
2. the middle large scale diode chip for backlight unit cutting manufacture method of raising brightness according to claim 1 and yield, is characterized in that: the cutting mode of chip is stealthy cutting.
3. the middle large scale diode chip for backlight unit cutting manufacture method of raising brightness according to claim 1 and yield, is characterized in that: described reflector material is oxide.
4. large scale diode chip for backlight unit cutting manufacture method in the raising brightness according to any one of claim 1-3 and yield, it is characterized in that: the thickness of middle large scale diode chip for backlight unit is between 120 microns to 250 microns, and middle large scale diode chip for backlight unit is of a size of 10mil × more than 23mil chip.
5. in the raising brightness according to any one of claim 1-3 and yield, large scale diode chip for backlight unit cutting manufacture method, is characterized in that: the depth of cut of described middle large scale diode chip for backlight unit is 70 microns ~ 200 microns.
6. in the raising brightness according to any one of claim 1-3 and yield, large scale diode chip for backlight unit cutting manufacture method, is characterized in that: the cutting width of described middle large scale diode chip for backlight unit is 15 microns ~ 30 microns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210500762.9A CN103000507B (en) | 2012-11-30 | 2012-11-30 | A kind of middle large size chip improves the manufacture method of brightness and yield |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210500762.9A CN103000507B (en) | 2012-11-30 | 2012-11-30 | A kind of middle large size chip improves the manufacture method of brightness and yield |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103000507A CN103000507A (en) | 2013-03-27 |
| CN103000507B true CN103000507B (en) | 2015-12-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210500762.9A Expired - Fee Related CN103000507B (en) | 2012-11-30 | 2012-11-30 | A kind of middle large size chip improves the manufacture method of brightness and yield |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105914267B (en) * | 2016-05-27 | 2018-08-17 | 山东浪潮华光光电子股份有限公司 | A method of preparing sapphire substrate LED chip using laser cutting |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102079015A (en) * | 2010-11-25 | 2011-06-01 | 山东华光光电子有限公司 | Laser-cutting method of GaAs-based LED (Light-Emitting Diode) chip |
| CN102290505A (en) * | 2011-09-09 | 2011-12-21 | 上海蓝光科技有限公司 | GaN-base light-emitting diode chip and manufacturing method thereof |
| CN102544299A (en) * | 2012-03-06 | 2012-07-04 | 湘能华磊光电股份有限公司 | Light emitting diode chip and preparation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8455332B2 (en) * | 2009-05-01 | 2013-06-04 | Bridgelux, Inc. | Method and apparatus for manufacturing LED devices using laser scribing |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102079015A (en) * | 2010-11-25 | 2011-06-01 | 山东华光光电子有限公司 | Laser-cutting method of GaAs-based LED (Light-Emitting Diode) chip |
| CN102290505A (en) * | 2011-09-09 | 2011-12-21 | 上海蓝光科技有限公司 | GaN-base light-emitting diode chip and manufacturing method thereof |
| CN102544299A (en) * | 2012-03-06 | 2012-07-04 | 湘能华磊光电股份有限公司 | Light emitting diode chip and preparation method thereof |
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| CN103000507A (en) | 2013-03-27 |
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Address after: 529728 Jiangmen City, Heshan Province, Republican Town, Xianghe Road, No. H, building, 326 Patentee after: Heshan Tongfang Lighting Technology Co., Ltd. Address before: 529728 Jiangmen City, Heshan Province, Republican Town, Xianghe Road, No. H, building, 326 Patentee before: Heshan Lide Electronic Industry Co., Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151209 Termination date: 20191130 |