CN102983181A - Photovoltaic conversion module - Google Patents
Photovoltaic conversion module Download PDFInfo
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- CN102983181A CN102983181A CN2011102702147A CN201110270214A CN102983181A CN 102983181 A CN102983181 A CN 102983181A CN 2011102702147 A CN2011102702147 A CN 2011102702147A CN 201110270214 A CN201110270214 A CN 201110270214A CN 102983181 A CN102983181 A CN 102983181A
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- photoelectric conversion
- conversion module
- active regions
- glass substrate
- layer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a photovoltaic conversion module which comprises a photovoltaic conversion layer, a glass substrate and a plurality of scattering structures. The photovoltaic conversion layer is provided with an illuminated face and further comprises a plurality of active regions and a plurality of non-active regions. A photovoltaic conversion effect is conducted through the active regions according to first incident light. The photovoltaic conversion effect cannot be conducted through the non-active regions. The glass substrate is formed on the illuminated face of the photovoltaic conversion layer. The scattering structures are formed inside the glass substrate and correspond to the positions of the non-active regions so that second incident light which shines into the non-active regions is scattered to the active regions through the scattering structures.
Description
Technical field
The invention relates to a kind of photoelectric conversion device, and particularly relevant for a kind of photoelectric conversion module.
Background technology
Photo-translating system is the device that generates electricity by absorbing solar energy.Have photoelectric conversion module in the photo-translating system, to carry out opto-electronic conversion, solar energy is transferred to electric current output.Photoelectric conversion module is because consideration and the demand of design, some assemblies may be set or form some structures in photoelectric conversion module on the actual photoelectric conversion layer that carries out the opto-electronic conversion effect, and cause the position of these assemblies or the corresponding photoelectric conversion layer of structure can't receive daylight or can't use the daylight that receives to carry out the opto-electronic conversion effect.Therefore, incide the daylight that these can't carry out the non-active region of opto-electronic conversion effect, its energy namely can't be utilized and cause the waste of energy.
Therefore, how designing a new photoelectric conversion module, so that the daylight of non-effect can be effectively utilized, promote the electrogenesis usefulness of photoelectric conversion module, is the industry problem demanding prompt solution.
Summary of the invention
The object of the present invention is to provide a kind of photoelectric conversion module, so that the daylight of non-effect can be effectively utilized, promote the electrogenesis usefulness of photoelectric conversion module.
Therefore, an aspect of of the present present invention is that a kind of photoelectric conversion module is being provided, and comprises: photoelectric conversion layer, glass substrate and a plurality of diffusing structure.Photoelectric conversion layer has sensitive surface, and photoelectric conversion layer comprises: a plurality of active regions and a plurality of non-active region.The active region is in order to carry out the opto-electronic conversion effect according to the first incident light.The opto-electronic conversion effect can't be carried out in non-active region.Glass substrate is formed on the sensitive surface of photoelectric conversion layer.Diffusing structure is formed at glass substrate inside, with the position corresponding to non-active region, scatters to the active region so that be incident to the second incident light of non-active region by diffusing structure.
According to one embodiment of the invention, wherein diffusing structure is to be formed at glass substrate inside by the laser engraving processing procedure.
According to another embodiment of the present invention, wherein non-active region is the laser cutting district of photoelectric conversion layer.
According to further embodiment of this invention, photoelectric conversion module also comprises: the first electrode layer and a plurality of plain conductor.The first electrode layer is positioned at glass substrate and opto-electronic conversion interlayer, and the first electrode layer is transparent.Plain conductor is formed between the first electrode layer and glass substrate, the electric current derivation that produces in order to the active region of photoelectric conversion layer is carried out the opto-electronic conversion effect, and non-active region is corresponding to the position of plain conductor.The material of plain conductor is silver or copper.Photoelectric conversion module also comprises the second electrode lay, is positioned at photoelectric conversion layer in contrast to a side of sensitive surface.
According to yet another embodiment of the invention, wherein diffusing structure is respectively coccoid.
According to the embodiment that the present invention has more, wherein diffusing structure is respectively the taper object.
Application the invention has the advantages that by being formed at the diffusing structure of glass substrate inside, under the situation that glass substrate is not impacted, the incident light that is incident to non-active region is scattered to the active region, improve the electrogenesis usefulness of photoelectric conversion module, and reach easily above-mentioned purpose.
Description of drawings
For above and other objects of the present invention, feature, advantage and embodiment can be become apparent, appended the description of the drawings is as follows:
Fig. 1 is in one embodiment of the invention, the schematic diagram of photoelectric conversion module;
Fig. 2 is in one embodiment of the invention, the enlarged diagram of dashed circle frame part among Fig. 1;
Fig. 3 is in another embodiment of the present invention, the schematic diagram of photoelectric conversion module; And
Fig. 4 then is in one embodiment of the invention, the enlarged diagram of dashed circle frame part among Fig. 3.
[primary clustering symbol description]
1: photoelectric conversion module 100: photoelectric conversion layer
101: sensitive surface 102: glass substrate
108: diffusing structure 110: plain conductor
Incident light 200 in 20: the first: the active region
30: the laser cutting district
Embodiment
Please refer to Fig. 1.Fig. 1 is in one embodiment of the invention, the schematic diagram of a photoelectric conversion module 1.Photoelectric conversion module 1 comprises: photoelectric conversion layer 100, glass substrate 102, the first electrode layer 104, the second electrode lay 106 and a plurality of diffusing structure 108.
The first electrode layer 104 is positioned on the sensitive surface 101 of photoelectric conversion layer 100, and 106 of the second electrode lays are positioned at photoelectric conversion layer 100 in contrast to a side of sensitive surface 101.Glass substrate 102 is positioned on the first electrode layer 104, to provide the first electrode layer 104 and photoelectric conversion layer 100 1 protective effects.Wherein glass substrate 102 and the first electrode layer 104 be transparent so that daylight can pass glass substrate 102 and the first electrode layer 104 and arrive photoelectric conversion layer 100.
In present embodiment, also comprise a plurality of plain conductors 110 on the first electrode layer 104, be formed at 102 of the first electrode layer 104 and glass substrates.After photoelectric conversion layer 100 is electric energy with transform light energy, by the setting of the first electrode layer 104, the second electrode lay 106 and plain conductor 110, the electric current that produces can be exported to outside circuit.In different embodiment, plain conductor 110 can be silver, copper or other is beneficial to the material of electric current conduction.In present embodiment, the first electrode layer 104 is a front electrode, and the second electrode lay 106 is a back electrode, so that the electric energy of output is derived with current system.In other embodiment, the first electrode layer 104 also can be back electrode, and by the second electrode lay 106 as front electrode.In present embodiment, also comprise a transparent enclosure material layer 102b such as ethylene/vinyl acetate copolymer (Ethylene Vinyl Acetate in the glass substrate 102; EVA) to reach the effect of protection plain conductor 110.
Please be simultaneously with reference to Fig. 2.Fig. 2 is in one embodiment of the invention, the enlarged diagram of dashed circle frame part among Fig. 1.Photoelectric conversion layer 100 is active region 200 in the part that can receive the first incident light 20 (illustrating with solid line).The opto-electronic conversion effect can be carried out according to the first incident light 20 in active region 200.The position of corresponding plain conductor 110 then is non-active region 202.Because non-active region 202 is covered by plain conductor 110, therefore, be incident to the second incident light 22 (illustrating with dotted line) of non-active region 202, the photoelectric conversion layer 100 that can't be positioned at non-active region 202 absorbs to carry out the opto-electronic conversion effect, and so that the energy of the second incident light 22 be wasted.
Under the suitable design by position, surface texture and angle, the diffusing structure 108 that is formed in the glass substrate 102 can make the second incident light 22 that is incident to non-active region 202 scatter in the active region 200 by diffusing structure 108, the photoelectric conversion layer 100 that its energy will can be in the active region 200 absorbs to carry out opto-electronic conversion, the unlikely waste that causes energy.
And, part glass substrate 102 surface design are had the male and fomale(M﹠F) structure with the technology of carrying out scattering in, may have owing to the male and fomale(M﹠F) structure on glass substrate 102 surfaces the accumulation of concentrating dust or soil in specific place, and then cause scattering efficiency to descend, even the shortcoming of covering incident light.Diffusing structure 108 of the present invention is to be formed in the glass substrate 102, will not have the above-mentioned problem that affects glass substrate 102, and can make the opto-electronic conversion usefulness of photoelectric conversion module 1 better.
Please refer to Fig. 3 and Fig. 4.Fig. 3 is in another embodiment of the present invention, the schematic diagram of photoelectric conversion module 1.Fig. 4 then is in one embodiment of the invention, the enlarged diagram of dashed circle frame part among Fig. 3.As the photoelectric conversion module of Fig. 1, the photoelectric conversion module 1 among Fig. 3 comprises: photoelectric conversion layer 100, glass substrate 102, the first electrode layer 104, the second electrode lay 106 and a plurality of diffusing structure 108.
In present embodiment, photoelectric conversion layer 100, the first electrode layer 104 and the second electrode lay 106 comprise a plurality of laser cutting district 30 that indicates such as Fig. 3.These laser cutting districts 30 respectively comprise several rough parallel grooves, so that photoelectric conversion module 1 is divided into the block that a group is connected mutually.Therefore, the opto-electronic conversion effect also can't be carried out in the position that forms in these laser cutting districts 30 in the photoelectric conversion layer 100, and becomes the non-active region 202 that indicates among Fig. 4.
In present embodiment, the diffusing structure 108 that illustrates among Fig. 4 is the diffusing structure 108 of taper.Therefore, the inclined-plane of the diffusing structure 108 by taper also can reach and makes the effect that is incident to 202 second incident lights, 22 scatterings of non-active region.In other is implemented, also can design according to actual needs the diffusing structure 108 of the shape that is different from above-mentioned coccoid or bullet, with can more completely the second incident light 22 that is incident to non-active region 202 be scattered to can utilize incident light produce to carry out the opto-electronic conversion effect electricity active region 200 among.
In other embodiment, also may have in the photoelectric conversion layer 100 of photoelectric conversion module 1 the non-active region 200 that forms because of other design consideration.By the design of the photoelectric conversion module 1 among the present invention in the diffusing structure 108 of glass substrate 102 inside, can be easily under the situation that glass substrate 102 is not impacted, the incident light that is incident to non-active region 202 is scattered to active region 200, improve the electrogenesis usefulness of photoelectric conversion module.
Although the present invention discloses as above with execution mode; so it is not to limit the present invention; anyly be familiar with this skill person; without departing from the spirit and scope of the present invention; when can being used for a variety of modifications and variations, so protection scope of the present invention is as the criterion when looking the scope that appending claims defines.
Claims (8)
1. a photoelectric conversion module is characterized in that, comprises:
One photoelectric conversion layer has a sensitive surface, and this photoelectric conversion layer comprises:
A plurality of active regions are in order to carry out an opto-electronic conversion effect according to one first incident light; And
A plurality of non-active regions are to carry out this opto-electronic conversion effect;
One glass substrate is formed on this sensitive surface of this photoelectric conversion layer; And
A plurality of diffusing structures, it is inner to be formed at this glass substrate, with the position corresponding to these a plurality of non-active regions, scatters to this a plurality of active regions so that be incident to one second incident light of these a plurality of non-active regions by these a plurality of diffusing structures.
2. photoelectric conversion module according to claim 1 is characterized in that, these a plurality of diffusing structures are to be formed at this glass substrate inside by a laser engraving processing procedure.
3. photoelectric conversion module according to claim 1 is characterized in that, these a plurality of non-active regions are a laser cutting district of this photoelectric conversion layer.
4. photoelectric conversion module according to claim 1 is characterized in that, also comprises:
One first electrode layer be positioned at this glass substrate and this opto-electronic conversion interlayer, and this first electrode layer is transparent; And
A plurality of plain conductors are formed between this first electrode layer and this glass substrate, the electric current derivation that produces in order to these a plurality of active regions of this photoelectric conversion layer are carried out this opto-electronic conversion effect, and these a plurality of non-active regions are the positions corresponding to these a plurality of plain conductors.
5. photoelectric conversion module according to claim 4 is characterized in that, the material of these a plurality of plain conductors is silver or copper.
6. photoelectric conversion module according to claim 1 is characterized in that, also comprises a second electrode lay, is positioned at this photoelectric conversion layer in contrast to a side of this sensitive surface.
7. photoelectric conversion module according to claim 1 is characterized in that, these a plurality of diffusing structures are respectively a coccoid.
8. photoelectric conversion module according to claim 1 is characterized in that, these a plurality of diffusing structures are respectively a taper object.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102702147A CN102983181A (en) | 2011-09-02 | 2011-09-02 | Photovoltaic conversion module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102702147A CN102983181A (en) | 2011-09-02 | 2011-09-02 | Photovoltaic conversion module |
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|---|---|
| CN102983181A true CN102983181A (en) | 2013-03-20 |
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| CN2011102702147A Pending CN102983181A (en) | 2011-09-02 | 2011-09-02 | Photovoltaic conversion module |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005038681A (en) * | 2003-07-18 | 2005-02-10 | Toyota Industries Corp | Transparent substrate for forming bottom emission type light-emitting element, and light-emitting device using same |
| CN1767216A (en) * | 2004-10-29 | 2006-05-03 | 三菱重工业株式会社 | Photoelectric conversion device |
| TW201029203A (en) * | 2009-01-22 | 2010-08-01 | Archers Systems Inc | Thin film photovoltaic and method of forming the same |
| US20110017287A1 (en) * | 2008-03-25 | 2011-01-27 | Nicholas Francis Borrelli | Substrates for photovoltaics |
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2011
- 2011-09-02 CN CN2011102702147A patent/CN102983181A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005038681A (en) * | 2003-07-18 | 2005-02-10 | Toyota Industries Corp | Transparent substrate for forming bottom emission type light-emitting element, and light-emitting device using same |
| CN1767216A (en) * | 2004-10-29 | 2006-05-03 | 三菱重工业株式会社 | Photoelectric conversion device |
| US20110017287A1 (en) * | 2008-03-25 | 2011-01-27 | Nicholas Francis Borrelli | Substrates for photovoltaics |
| TW201029203A (en) * | 2009-01-22 | 2010-08-01 | Archers Systems Inc | Thin film photovoltaic and method of forming the same |
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Application publication date: 20130320 |