CN102983107B - A kind of diode of soft material ring and hard epoxy encapsulation and preparation method thereof - Google Patents
A kind of diode of soft material ring and hard epoxy encapsulation and preparation method thereof Download PDFInfo
- Publication number
- CN102983107B CN102983107B CN201210533917.9A CN201210533917A CN102983107B CN 102983107 B CN102983107 B CN 102983107B CN 201210533917 A CN201210533917 A CN 201210533917A CN 102983107 B CN102983107 B CN 102983107B
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- China
- Prior art keywords
- lead
- base
- chip
- soft material
- diode
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- 239000007779 soft material Substances 0.000 title claims abstract description 43
- 238000005538 encapsulation Methods 0.000 title claims abstract description 20
- 239000004593 Epoxy Substances 0.000 title claims abstract description 11
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 239000003822 epoxy resin Substances 0.000 claims abstract description 19
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 19
- 229910000679 solder Inorganic materials 0.000 claims abstract description 11
- 229920002379 silicone rubber Polymers 0.000 claims description 5
- 239000004945 silicone rubber Substances 0.000 claims description 5
- 229920002302 Nylon 6,6 Polymers 0.000 claims description 4
- 239000000835 fiber Substances 0.000 claims description 4
- 238000005452 bending Methods 0.000 claims description 3
- 229920002457 flexible plastic Polymers 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 11
- 230000005540 biological transmission Effects 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 6
- 239000000428 dust Substances 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 238000000465 moulding Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The invention discloses diode of a kind of soft material ring and hard epoxy encapsulation and preparation method thereof, it includes base 1, chip 4, lead-in wire pier nose 6 and lead-in wire 7, chip 4 is welded by solder 5 with base 1, chip 4 is welded by solder 5 with lead-in wire pier nose 6, lead-in wire pier nose 6 is connected with lead-in wire 7, soft material ring 2 is in close contact between base 1 and epoxy resin 3 and with base 1 and epoxy resin 3, and epoxy resin 3 is cast in soft material ring 2；Solve and carry out directly encapsulation because the base of diode, chip and lead riser not being tightly fastened with soft material, easily affect chip when going between by external force make diode serviceable bife reduce or adopt formation gap between base and encapsulating material big with the difficulty of processing eliminating external force existence, diode is in encapsulation process or in use procedure, the foreign bodies such as dust are easily entered in gap, causing gap to reduce until disappearing, affecting the problem such as transmission and release of pressure。
Description
Technical field
The invention belongs to a kind of diode and preparation method thereof, particularly relate to diode of a kind of soft material ring and hard epoxy encapsulation and preparation method thereof。
Background technology
Commonly used diode in the commutator of motor vehicles, in order to improve the service life of diode, using generally to adopt is fixed in base by naked diode, it is packaged again, but in actual use, owing to the base of diode is easily subject to External Force Acting, and external pressure can pass through encapsulating material to diode, cause that diode damages, reduce the service life of diode, prior art adopts vertical type lead-in wire, when lead-in wire is subject to external force, external force can be delivered to chip by lead-in wire, reduce chip service life, in prior art in order to when eliminating base by external force pressure transmission damage that diode generally adopts soft material encapsulation but adopt soft material to carry out directly encapsulating to diode can not by the base of diode, chip, go between first-class being tightly secured together, easily affecting chip when lead-in wire is by external force makes diode serviceable bife reduce, or adopt be processed into boss by inside base, abut against on boss with a sleeve pipe again, then the fixing diode of implant is poured into a mould again, between base and sleeve pipe, thus form a gap, when base stress, isolate to protect diode to external pressure by gap, but adopt and there is the problem that owing to gap dimension requirement is within 0-0.5mm in this way, such structure needs first to process inside base boss structure, difficulty of processing is big, it is difficult to ensure that gap size；Diode is in encapsulation process or in use procedure, and the foreign bodies such as dust are easily entered in gap, causing gap to reduce until disappearing, affecting transmission and the release of pressure, it is impossible to well protect diode chip for backlight unit, makes diode reduce service life。
Summary of the invention
The technical problem to be solved in the present invention: diode of a kind of soft material ring and hard epoxy encapsulation and preparation method thereof is provided, with solve prior art adopts soft material carry out directly encapsulation can not by the base of diode, chip, lead-in wire is first-class is tightly secured together, easily affect chip when going between by external force make diode serviceable bife reduce or adopt formation gap between base and encapsulating material big with the difficulty of processing eliminating external force existence, it is difficult to ensure that gap size；Diode is in encapsulation process or in use procedure, and the foreign bodies such as dust are easily entered in gap, causing gap to reduce until disappearing, affecting transmission and the release of pressure, it is impossible to well protect diode chip for backlight unit, making the problems such as diode reduction in service life。
Technical solution of the present invention:
A kind of diode of soft material ring and hard epoxy encapsulation, it includes base, chip, lead-in wire pier nose and lead-in wire, chip is welded by solder with base, chip is welded by solder with lead-in wire pier nose, lead-in wire pier nose is connected with lead-in wire, soft material ring is in close contact between base and epoxy resin and with base and epoxy resin, and poured with epoxy resin is in soft material ring。
Soft material ring is flexible plastic ring, soft nylon66 fiber or silicone rubber。
The end of lead-in wire and lead-in wire pier nose junction are the bending of " S " type。
Soft material ring thickness is 0.2～1.2, is highly 1～2.5mm。
Described soft material ring and the preparation method of the diode of hard epoxy encapsulation, it comprises the steps:
Step 1, chip 4 and base 1 is welded by solder 5 after, lead-in wire pier nose 6 and chip 4 are welded together；
After step 2, step 1 complete, by chip table molding Passivation Treatment；
After step 3, step 2 complete, soft material ring is fixed on base inwall；
Step 4, embedding, after step 3 completes, by epoxy resin pouring to soft material ring, by the fixing base of epoxy resin, chip and lead-in wire pier nose, make fixing base, chip and lead-in wire pier nose be tightly secured together。
The method have the benefit that
The present invention utilizes soft material ring to be subject to External Force Acting can deform upon absorption pressure; reduce the transmission of pressure; make external pressure reduce and deliver on chip; the pressure being pressed on base will reduce pressure by soft rings of material; copper material pressure experienced is avoided all to be delivered on hard epoxy resin; thus protecting chip, to reach the purpose that protection chip is not destroyed by external force；Adopt hard epoxy encapsulation to fix base, chip and lead-in wire pier nose, and lead terminal and lead-in wire pier nose junction adopt the structure of band " S " type, it is possible to when avoiding External Force Acting on lead-in wire, it is transferred to wafer damage chip by going between, the present invention compared with prior art, base simple in construction, easy to process, diode volume after encapsulation is little, the use scope that occupies little space is relatively wide, and not by the impact of pressure when press-fiting, chip is less by the impact of external force, reliability is high, long service life；Solve prior art adopts soft material carry out directly encapsulation can not by the base of diode, chip, lead-in wire is first-class is tightly secured together, easily affect chip when going between by external force make diode serviceable bife reduce or adopt formation gap between base and encapsulating material big with the difficulty of processing eliminating external force existence, it is difficult to ensure that gap size；Diode is in encapsulation process or in use procedure, and the foreign bodies such as dust are easily entered in gap, causing gap to reduce until disappearing, affecting transmission and the release of pressure, it is impossible to well protect diode chip for backlight unit, making the problems such as diode reduction in service life。
Accompanying drawing illustrates:
Fig. 1 is present configuration schematic diagram。
Detailed description of the invention:
A kind of diode of soft material ring and hard epoxy encapsulation, it includes base 1, chip 4, lead-in wire pier nose 6 and lead-in wire 7, chip 4 is welded by solder 5 with base 1, chip 4 is welded by solder 5 with lead-in wire pier nose 6, lead-in wire pier nose 6 is connected with lead-in wire 7 processing, soft material ring 2 is in close contact between base 1 and epoxy resin 3 and with base and epoxy resin 3, epoxy resin 3 is cast in soft material ring 2, soft material ring 2 selects to use softer plastic ring, soft nylon66 fiber or silicone rubber, when outside base 1 is subject to External Force Acting, soft material ring 2 is made to be under pressure, soft material deforms, reach to reduce the purpose transmitting stresses to epoxy resin 3, the thickness of soft material ring 2 is 0.2～1.2, after making soft material ring be under pressure, the amount of soft material deformation is abundant, it is not take up again filling the space of epoxy resin, soft material ring 2 is highly 1.2～2.5mm, pressure is not delivered on chip to make soft material ring guarantee when being under pressure, can ensure that again enough assembly spaces。
Lead-in wire 7 end with lead-in wire pier nose 6 junction be " S " type bending, it is achieved External Force Acting in go between 7 time, end " S " type place occur elastic deformation, it is achieved absorb external force effect, minimizing External Force Acting to chip。
Described soft material ring and the preparation method of the diode of hard epoxy encapsulation, it comprises the steps:
Step 1, chip 4 and base 1 is welded by solder 5 after, lead-in wire pier nose 6 is welded together by solder 5 with chip 4, lead-in wire pier nose 67 is connected with going between；
After step 2, step 1 complete, by chip 4 table top molding Passivation Treatment；
After step 3, step 2 complete, soft material ring 2 is fixed on base 1 inwall, when soft material ring 2 adopts flexible plastic ring or soft nylon66 fiber, press injector can be passed through soft material ring 2 is injected base 1 inwall, when soft material ring 2 adopts silicone rubber, by silicone rubber being spread upon base 1 inwall；
After step 4, step 3 complete, embedding, epoxy resin 3 is watered to soft material ring 2, fixes base 1, chip 4 and lead-in wire pier nose 6 by epoxy resin 3, make fixing base 1, chip 4 and lead-in wire pier nose 6 be tightly secured together。
Claims (1)
1. the diode of a soft material ring and hard epoxy encapsulation, it includes base (1), chip (4), lead-in wire pier nose (6) and lead-in wire (7), chip (4) is welded by solder (5) with base (1), chip (4) is welded by solder (5) with lead-in wire pier nose (6), lead-in wire pier nose (6) is connected with lead-in wire (7), it is characterized in that: soft material ring (2) is positioned between base (1) and epoxy resin (3) and is in close contact with base (1) and epoxy resin (3), epoxy resin (3) is cast in soft material ring (2), soft material ring (2) is flexible plastic ring, soft nylon66 fiber or silicone rubber；Soft material ring (2) thickness is 0.2～1.2, is highly 1～2.5mm；The end of lead-in wire (7) and lead-in wire pier nose (6) junction are the bending of " S " type。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210533917.9A CN102983107B (en) | 2012-12-12 | 2012-12-12 | A kind of diode of soft material ring and hard epoxy encapsulation and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210533917.9A CN102983107B (en) | 2012-12-12 | 2012-12-12 | A kind of diode of soft material ring and hard epoxy encapsulation and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102983107A CN102983107A (en) | 2013-03-20 |
| CN102983107B true CN102983107B (en) | 2016-06-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210533917.9A Active CN102983107B (en) | 2012-12-12 | 2012-12-12 | A kind of diode of soft material ring and hard epoxy encapsulation and preparation method thereof |
Country Status (1)
| Country | Link |
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| CN (1) | CN102983107B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106424466B (en) * | 2015-08-12 | 2019-05-24 | 朋程科技股份有限公司 | The manufacturing method and device of the pin configuration of rectifier diode |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102263186A (en) * | 2010-05-28 | 2011-11-30 | 贵州雅光电子科技股份有限公司 | High reliable light-emitting diode and manufacturing method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08204066A (en) * | 1995-01-20 | 1996-08-09 | Fuji Electric Co Ltd | Semiconductor device |
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- 2012-12-12 CN CN201210533917.9A patent/CN102983107B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102263186A (en) * | 2010-05-28 | 2011-11-30 | 贵州雅光电子科技股份有限公司 | High reliable light-emitting diode and manufacturing method thereof |
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| Publication number | Publication date |
|---|---|
| CN102983107A (en) | 2013-03-20 |
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| C14 | Grant of patent or utility model | ||
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| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Diode packaged by soft material ring and hard epoxy resin and fabrication method of diode Effective date of registration: 20170116 Granted publication date: 20160622 Pledgee: Bank of Guiyang Limited by Share Ltd. high tech branch Pledgor: GUIZHOU YAGUANG ELECTRONICS TECHNOLOGY Co.,Ltd. Registration number: 2017990000037 |
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Date of cancellation: 20200317 Granted publication date: 20160622 Pledgee: Bank of Guiyang Limited by Share Ltd. high tech branch Pledgor: GUIZHOU YAGUANG ELECTRONICS TECHNOLOGY Co.,Ltd. Registration number: 2017990000037 |
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Denomination of invention: A diode encapsulated by soft material ring and hard epoxy resin and its preparation method Effective date of registration: 20210610 Granted publication date: 20160622 Pledgee: Guiyang guanshanhu District Guarantee Co.,Ltd. Pledgor: GUIZHOU YAGUANG ELECTRONICS TECHNOLOGY Co.,Ltd. Registration number: Y2021980004611 |
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| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
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Date of cancellation: 20220808 Granted publication date: 20160622 Pledgee: Guiyang guanshanhu District Guarantee Co.,Ltd. Pledgor: GUIZHOU YAGUANG ELECTRONICS TECHNOLOGY Co.,Ltd. Registration number: Y2021980004611 |