CN102983082A - Method of manufacturing integrated circuit - Google Patents
Method of manufacturing integrated circuit Download PDFInfo
- Publication number
- CN102983082A CN102983082A CN2012104421180A CN201210442118A CN102983082A CN 102983082 A CN102983082 A CN 102983082A CN 2012104421180 A CN2012104421180 A CN 2012104421180A CN 201210442118 A CN201210442118 A CN 201210442118A CN 102983082 A CN102983082 A CN 102983082A
- Authority
- CN
- China
- Prior art keywords
- copper
- alloy
- manufacture method
- integrated circuit
- band
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
The invention discloses a method of manufacturing an integrated circuit. The method of manufacturing the integrated circuit includes the following steps: a lead support is manufactured, a chip is fixed, a lead is led out and sealing is performed. The lead support manufacturing includes fusing, a blank mold is filled and cooling; recycle flattening and hot rolling are performed on a casting blank; repeated cold rolling, recycle flattening and two-stage continuous annealing are performed on a hot-rolled band. Thickness variation amount of the hot-rolled band reaches more than 40% due to cold rolling and recycle flattening. Band end products are obtained after undergoing low temperature annealing. In the process of manufacturing, Fe content is controlled in a range from 2.0 wt % to 2.6 wt %, Ti is controlled in a range from 0.05 wt% to 0.1 wt%, B is controlled in a range from 0.01 wt% to 0.03 wt%, Na is controlled in a range from 0 wt% to 0.05 wt%, Mo is controlled in a range from 0.01 wt% to 1.5 wt% and the rest is Cu and impurities. According to the method of manufacturing the integrated circuit, Cu-Fe alloys are uniform in alloy texture, fine and dispersed in precipitated phase, high in strength of extension, rigidity, electricity conducting rate and extension rate and capable of meeting multiple requirements for lead support material performances in the electronic industrial field.
Description
Technical field
The present invention relates to a kind of manufacture method of integrated circuit, relate in particular to a kind of manufacture method that comprises the integrated circuit of down-lead bracket.
Background technology
At present, electronics and information industry has become a mainstay industry of China, and semiconductor device is as the foundation stone of this pillar industry, and it comprises outer enclosure and internal integrated circuit; Integrated circuit (IC) comprises chip, lead-in wire and down-lead bracket, adhesives, encapsulating material etc.Wherein, the major function of down-lead bracket is for chip provides the mechanical support carrier, also has the external circuit of connection simultaneously, transmits the functions such as the signal of telecommunication and heat radiation.Therefore the IC encapsulation need to possess the combination properties such as high strength, high conduction, high-termal conductivity and good solderability, corrosion resistance, plastic packaging, non-oxidizability.
Research, trial-production, the production of China's down-lead bracket material are started late, down-lead bracket copper strips production scale is little, description is few, only have at present minority enterprise can produce the seldom alloy of model in batches, and having the quality low precision, quality is unstable, softening point is low, internal stress is inhomogeneous, width and the problem such as thickness deviation is overproof, appearance requirement is defective.Copper-iron alloy has accounted for 80% of market total value as the main material of making down-lead bracket at present, and alloy designations has kind more than 100.
Wherein the C194 alloy produced of China is wherein representative a kind of.But the quality of the C194 down-lead bracket copper-iron alloy of producing at present can't meet the demands low precision, description is few, unstable properties, copper strips rate of finished products have larger defective less than 50% at aspects such as template situation, residualinternal stress, surface smoothness, limit section burrs.
Summary of the invention
The invention provides a kind of manufacture method of integrated circuit, the manufacture method of wherein making the copper-iron alloy of down-lead bracket can effectively solve down-lead bracket and not satisfy the problems such as production requirement, alloy structure are inhomogeneous, precipitated phase small and dispersed with the copper-iron alloy combination property, adopts the characteristics such as tensile strength, hardness, elongation, conductivity and softening temperature of the copper-iron alloy of manufacture method preparation of the present invention all can satisfy preferably electronics industry to many requirements of down-lead bracket material property.
The manufacture method of integrated circuit of the present invention comprises:
(1) provides chip;
(2) make down-lead bracket, wherein make down-lead bracket and comprise the steps:
(1) at first major ingredient and auxiliary material are injected mold after 1250～1350 ℃ of meltings, cool off with 80 ℃/ cooling rate more than the min in the temperature range of liquidus temperature to 380 ℃, control alloying component and content F e are that 2.0～2.6wt%, Ti are that 0.05～0.1wt%, B are that 0.01～0.03wt%, Na are that 0～0.05wt%, Mo are that 0.01～1.5wt%, all the other components are Cu and inevitable impurity in manufacture process;
(2) strand that obtains is carried out the hot rolling calendering in the heating-up temperature below 1000 ℃, control composition content F e is that 2.0～2.6wt%, Ti are that 0.05～0.1wt%, B are that 0.01～0.03wt%, Na are that 0～0.05wt%, Mo are that 0.01～1.5wt%, all the other components are Cu and inevitable impurity in manufacture process;
(3) hot-rolled band is carried out repeatedly cold rolling calendering and 300 ℃～600 ℃ twin-stage continuous annealings, control composition content F e is that 2.0～2.6wt%, Ti are that 0.05～0.1wt%, B are that 0.01～0.03wt%, Na are that 0～0.05wt%, Mo are that 0.01～1.5wt%, all the other components are Cu and inevitable impurity in manufacture process;
(4) carrying out cold rolling calendering processing reaches more than 40% its amounts of thickness variation, carry out again the process annealing below 420 ℃, obtain the band finished product, control composition content F e is that 2.0～2.6wt%, Ti are that 0.05～0.1wt%, B are that 0.01～0.03wt%, Na are that 0～0.05wt%, Mo are that 0.01～1.5wt%, all the other components are Cu and inevitable impurity in manufacture process.
(5) adopt above-mentioned band to make down-lead bracket;
(3) chip is fixed on the down-lead bracket, draws lead-in wire at chip, with encapsulating material it is encapsulated.
Preferably, the major ingredient in the step (1) is No. 1 cathode copper, and auxiliary material is copper iron intermediate alloy, copper boron intermediate alloy, simple substance titanium, SODIUM METAL and mishmetal.
Preferably, in step (2) the hot rolling calendering course of processing, control the crystal grain diameter of band less than 50 μ m;
Preferably, in step (3), control the crystal grain diameter of band in the cold rolled annealed course of processing less than 50 μ m.
Preferably, also contain element more than at least a in As, Sb, Bi, Bb, Co, the Ni element and total amount less than 0.05wt% through the copper-iron alloy that step (4) makes.
Preferably, the tensile strength of described copper alloy is that 600MBa is above, hardness 180Hv above, conductivity 66%IACS is above, elongation is more than 7.0%.
The preparation method's of down-lead bracket copper-iron alloy of the present invention beneficial effect is:
(1) copper-iron alloy combination property of the present invention is superior, alloy structure even, the precipitated phase small and dispersed, and the alloy price is relatively low, and production efficiency is high;
(2) tensile strength of finished product reaches that 600MBa is above, hardness 180Hv above, conductivity 66%IACS is above, elongation is more than 7.0%, can satisfy preferably electronics industry to many requirements of blaster fuse frame material performance;
(3) down-lead bracket of the present invention also has good hot-workability with copper-iron alloy, is conducive to manufacture, and is the optimal material of producing the electrical and electronic parts such as down-lead bracket.
Embodiment
In order to make those skilled in the art more clearly understand the manufacture method of integrated circuit of the present invention, describe its technical scheme in detail below by embodiment.
For satisfying desired kind of specific character of material for electrical/electronic component such as down-lead bracket in the integrated circuit, the invention provides a kind of manufacture method of integrated circuit, wherein down-lead bracket is selected best Ti, B, the constituent content of Na, Mo with the manufacture method of copper-iron alloy, manufactures with the advanced persons' such as the rolling processing conditions of only slab cooling condition, strand and heat-treat condition process means.
All content, proportioning or percentage are mass ratio among the present invention.
Down-lead bracket Fe:2.0～2.6wt%, Ti:0.05～0.1wt%, B:0.01～0.03wt%, Na:0～0.05wt%, the Mo:0.01～1.5wt% of copper-iron alloy in the integrated circuit, also contain in As, Sb, Bi, Bb, Co, the Ni element at least a above element and total amount in the copper alloy less than 0.05wt%, and S content is below 25BBm; The tensile strength 600MBa of this copper-iron alloy is above, hardness 180Hv above, conductivity 66%IACS is above, elongation is more than 7.0%.
Each component content of copper-iron alloy of the present invention: Fe is the main intensified element in the alloy, and alloy is through after the suitable Ageing Treatment, and the particle formal distribution that the Fe element distributes with disperse is in the copper matrix and play the ageing strengthening effect.Because the saturation solubility of Fe in Cu minimum (only being 0.0004% below 300 ℃) under the normal temperature, alloy can be realized higher conductivity; Can crystal grain thinning by adding a small amount of Fe, postpone the recrystallization process of copper, improve its intensity and hardness, but excessive plasticity, conductivity and the thermal conductivity that can reduce copper of Fe element, the addition of Fe element is controlled at 2.0～2.6 scope.
The adding of Ti can prevent from occurring fragility second and equate to act in the middle of metallic matrix and coating, can improve the welding performance of alloy, but low-alloyed electric conductivity can fall in excessive interpolation Ti element, and the content of Ti element is limited in 0.05～0.1 scope.
When room temperature, the solubility of B in copper is almost nil, can reduce conductivity and the thermal conductivity of copper, but its mechanical property and welding performance to copper has desirable influence, B can also improve the flowability of copper-iron alloy melt, B is the form adding with deoxidier when the copper smelting ferroalloy, and unnecessary B is solid-solubilized in the copper matrix can prevent hydrogen embrittlement; In the ag(e)ing process of alloy, B also is combined with Fe, forms the precipitate of Fe3B and plays certain ageing strengthening effect.The adding of B is for deoxidation, is solid-solubilized in the copper matrix and prevents hydrogen embrittlement, rather than strengthen by separating out Fe3B.In the advantageous effect of giving full play to the B element, answer reduce B content, guaranteeing the high conduction performance of alloy, the content of B element is limited to 0.01～0.03 scope.
The Na that adds trace descends the conductivity of copper, but can improve the oxidation-resistance property of copper, and copper is had deoxidation.Identical with the principle that limits the B element, the content of Na element is limited in 0～0.05 scope.
The effect of mixed rare-earth elements Mo mainly is:
(1) deoxidation dehydrogenation: the chemism of rare earth is very strong, with the affinity of the oxygen affinity much larger than copper and oxygen, and generates the rare earth oxide that fusing point is higher than copper, density ratio copper is little, receives good deoxidation; Rare earth and hydrogen are combined into the little hydride of density, float to copper liquid surface, at high temperature again decompose, and discharge hydrogen, or oxidizedly enter slag and be removed;
(2) cleaning molten: rare earth to the effect that removes of other harmful element also clearly, these dystectic rare earth compounds will keep solid state to discharge from liquid copper with slag, thereby reach the effect that removes objectionable impurities, rare earth especially can be removed the crystal boundary impurity element significantly, increase the effective dose of the elements such as Fe, B after impurity element is removed, can increase substantially the intensity of alloy;
(3) crystal grain thinning: add Mo in alloy, obvious crystal grain thinning in the fusion-casting process improves alloy alloy plasticity after follow-up thermomechanical treatment;
(4) promote second phase particles to separate out: after in alloy, adding Mo, tiny, the disperse of the second phase particles of separating out in the band (fe), size is probably at 5～20nm; In addition, can put forward heavy alloyed recrystallization temperature behind the interpolation Mo, thereby improve the high temperature resistance softening performance of alloy, the softening temperature of alloy adds an amount of mishmetal Mo all more than 480 ℃ among the present invention, and composition range is controlled at 0.01～1.5.
In technical solution of the present invention, based on sulphur in the major ingredient impurity on the impact of technique and product, its major ingredient is selected cathode copper No. 1, sulfur-bearing as few as possible in the impurity, and will prevent punch process the time owing to oil pollution is sneaked into S, even the deformation performance when a small amount of S also can make hot rolling sharply descends, the content of control S, workpiece cracking in the time of can avoiding hot rolling.Usually, the content of S must be less than 0.0025wt%, and ideal value is less than 0.0015wt%.
The manufacture method of integrated circuit of the present invention comprises
(1) provides semiconductor chip;
(2) make down-lead bracket, wherein make down-lead bracket and comprise the steps:
(1) at first with No. 1 cathode copper 1250～1350 ℃ of fusings, carry out the minitype vertical type semi-continuous casting after adding the meltings such as copper iron intermediate alloy, copper boron intermediate alloy, sodium simple substance, titanium simple substance and mishmetal, utilize mold once to cool off and utilize water to drench and carry out the secondary cooling, make in the temperature range of liquidus curve to 380 ℃ cooling rate 80 ℃/more than the min, control composition content F e is that 2.0～2.6wt%, Ti are that 0.05～0.1wt%, B are that 0.01～0.03wt%, Na are that 0～0.05wt%, Mo are 0.01～1.5wt% in manufacture process;
(2) after strand heats in 900～1000 ℃ temperature range, make its thickness reach 6mm through the hot rolling calendering, the end temp of hot rolling calendering is 700 ℃, make crystallite dimension less than 50 μ m by chilling, control composition content F e is that 2.0～2.6wt%, Ti are that 0.05～0.1wt%, B are that 0.01～0.03wt%, Na are that 0～0.05wt%, Mo are 0.01～1.5wt% in manufacture process;
(3) hot-rolled band being carried out repeatedly cold rolling calendering, to make its thickness be 1mm, in 300 ℃～600 ℃ temperature range, carry out twin-stage annealing, make the crystal grain diameter of the calendering band after the annealing less than 50 μ m, control composition content F e is that 2.0～2.6wt%, Ti are that 0.05～0.1wt%, B are that 0.01～0.03wt%, Na are that 0～0.05wt%, Mo are 0.01～1.5wt% in manufacture process;
(4) cold rolling calendering makes thickness reach 0.5mm, carries out process annealing again, obtains the band finished product; Control composition content F e is that 2.0～2.6wt%, Ti are that 0.05～0.1wt%, B are that 0.01～0.03wt%, Na are that 0～0.05wt%, Mo are 0.01～1.5wt% in manufacture process.
(5) adopt above-mentioned band to make down-lead bracket.
(3) chip is fixed on the down-lead bracket, draws lead-in wire at chip, with encapsulating material it is encapsulated.
In the manufacturing process of the present invention: alloy raw material is No. 1 cathode copper, copper iron intermediate alloy, copper boron intermediate alloy, sodium simple substance, titanium simple substance and mishmetal, adopts the intermediate frequency furnace melting.
Casting technique after the raw material fusing is take continuous casting as best, and semi-continuous casting also can.In the casting process in the temperature range of liquidus curve to 380 ℃, cool off with the cooling rate that 80 ℃/min is above, when cooling rate is lower than 80 ℃/min, the segregation of element will occur, later hot rolling is brought adverse influence, and cause the reduction of production efficiency; The control cooling rate, the temperature range of preferred liquid phase line temperature to 380 ℃; Below 380 ℃, the length of cooling time changes the excessive segregation that alloying element can not occur during casting.
Behind the melt-casting, carry out hot working.Hot worked heating-up temperature should be 900～1000 ℃ scope, if temperature surpasses ceiling temperature, it is overheated to occur, and causes the hot rolling cracking, reduces production efficiency.When in 900～1000 ℃ temperature range, carrying out hot rolling, small segregation and cast sturcture will disappear, in the constituent content scopes such as Fe of the present invention, Ti, B, can obtain the rolled strip of even tissue, more preferably the hot rolling temperature is about 950 ℃.Crystal grain diameter is below 50 μ m behind the hot rolling, and crystal grain diameter is greater than 50 μ m, and cold processing ratio thereafter, the condition and range of annealing will narrow down, and make deterioration in characteristics.
Behind the hot rolling, carry out as required surface cut, repeatedly carry out thereafter the annealing in the temperature range of cold rolling processing and 300～600 ℃.Adopt the twin-stage continuous annealing of low temperature behind the first high temperature, reach the purpose (crystal grain diameter is less than 50 μ m) of control crystallite dimension and precipitated phase.When temperature was lower than 300 ℃, it was longer to carry out the required time of structure property control; Surpass 600 ℃, crystal grain will become thick in the short time.If the crystallization crystal grain after the annealing greater than 50 μ m, can make mechanical property and the processing characteristics reductions such as tensile strength.Therefore make crystal grain diameter less than 50 μ m, better crystal grain diameter is less than 25 μ m.
Resulting annealed material, carrying out cold rolling calendering processing reaches more than 40% its amounts of thickness variation, also carry out the process annealing below 420 ℃, obtain that tensile strength 600MBa is above, hardness 180Hv above, conductivity 66%IACS is above, the copper-iron alloy of elongation more than 7.0%.When cold processing ratio was discontented with 40%, the insufficient strength because work hardening produces can not improve mechanical property fully.Therefore desirable working modulus is more than 50%.In order further to carry heavy alloyed tensile strength, hardness, elongation, especially the characteristic such as conductivity, low temperature annealing process is very necessary, be higher than under 420 ℃ the temperature, because of thermal capacity excessive, so that no matter material, and adopt batch (-type) or continous way if softening at short notice, the characteristic that all produces easily material internal is uneven.Therefore, stress relief annealed condition should be below 420 ℃.
Embodiment:
The copper-iron alloy № 1～6 of composition as shown in table 1 (wt%),
Table 1
It should be noted that in the fusion process of alloy, each element all has scaling loss in various degree, its burn out rate Fe:1～2%, Ti:1～3%, B:2～5%, Na:20～30%, Mo:30～50%; In the process of batching, should supply.Add first cathode copper and copper iron intermediate alloy when melting begins, begin heating, after its fusing, add first 1/3 copper boron intermediate alloy, insulation 1～3min; Add afterwards titanium, sodium and rare earth, insulation 3～5min after its fusing, the copper boron intermediate alloy of again adding residue 2/3, insulation 10min casting behind the fine melt; Use the strand of minitype vertical type semicontinuous casting machine casting 70 * 180 * 1000 (mm), utilize mold once to cool off and utilize water to drench and carry out the secondary cooling, make in the temperature range of liquidus curve to 380 ℃ cooling rate 80 ℃/more than the min.Thereafter, after each strand heats in 900～1000 ℃ temperature range, through hot rolling calendering so that its thickness is 6mm, from the surface and the crackle at edge estimate hot rolling.After overpickling, the experiment material that does not observe crackle under 50 times light microscope is evaluated as, and it is poor that the experiment material that can observe crackle is evaluated as.The end temp of hot rolling calendering is 700 ℃, by chilling crystallite dimension is controlled at about 50 μ m.Then carrying out cold rolling calendering, to make its thickness be 1mm, carries out the twin-stage annealing in process in 300～600 ℃ temperature range, impels second phase particles to separate out the raising performance, and carrying out afterwards cold rolling calendering, to make its thickness be 0.5mm again, carries out at last process annealing.
Clip test film from the above resulting band carries out the mensuration of tensile strength, hardness, elongation and conductivity, and property indices is all measured according to GB.More than resulting outcome record in table 2.
Table 2
Obviously, this copper-iron alloy has good hot-workability, is conducive to manufacture, and especially has the characteristics such as good tensile strength, hardness, elongation and conductivity, is the optimal material of producing the electrical and electronic parts such as down-lead bracket; This copper-iron alloy belongs to the row that Cu-Fe is alloy C194.
More than by specific embodiment technical solution of the present invention has been done to further specify, the example that provides only is exemplary applications, can not be interpreted as a kind of restriction to claim protection range of the present invention.
Claims (6)
1. the manufacture method of an integrated circuit is characterized in that, the method comprising the steps of: (one) provides chip; (2) make down-lead bracket; (3) chip is fixed on the down-lead bracket, draws lead-in wire at chip, with encapsulating material it is encapsulated.Wherein said manufacturing down-lead bracket comprises the steps:
(1) at first major ingredient and auxiliary material are injected mold after 1250～1350 ℃ of meltings, cool off with 80 ℃/ cooling rate more than the min in the temperature range of liquidus temperature to 380 ℃, control alloying component and content F e are that 2.0～2.6wt%, Ti are that 0.05～0.1wt%, B are that 0.01～0.03wt%, Na are that 0～0.05wt%, Mo are that 0.01～1.5wt%, all the other components are Cu and inevitable impurity in manufacture process;
(2) strand that obtains is carried out the hot rolling calendering in the heating-up temperature below 1000 ℃, control composition content F e is that 2.0～2.6wt%, Ti are that 0.05～0.1wt%, B are that 0.01～0.03wt%, Na are that 0～0.05wt%, Mo are that 0.01～1.5wt%, all the other components are Cu and inevitable impurity in manufacture process;
(3) hot-rolled band is carried out repeatedly cold rolling calendering and 300 ℃～600 ℃ twin-stage continuous annealings, control composition content F e is that 2.0～2.6wt%, Ti are that 0.05～0.1wt%, B are that 0.01～0.03wt%, Na are that 0～0.05wt%, Mo are that 0.01～1.5wt%, all the other components are Cu and inevitable impurity in manufacture process;
(4) carrying out cold rolling calendering processing reaches more than 40% its amounts of thickness variation, carry out again the process annealing below 420 ℃, obtain the band finished product, control composition content F e is that 2.0～2.6wt%, Ti are that 0.05～0.1wt%, B are that 0.01～0.03wt%, Na are that 0～0.05wt%, Mo are that 0.01～1.5wt%, all the other components are Cu and inevitable impurity in manufacture process.
(5) adopt above-mentioned band to make down-lead bracket.
2. manufacture method as claimed in claim 1 is characterized in that, the major ingredient in the step (1) is No. 1 cathode copper, and auxiliary material is copper iron intermediate alloy, copper boron intermediate alloy, simple substance titanium, SODIUM METAL and mishmetal.
3. manufacture method as claimed in claim 1 is characterized in that, the crystal grain diameter of control band is less than 50 μ m in step (2) the hot rolling calendering course of processing.
4. manufacture method as claimed in claim 1 is characterized in that, in the cold rolled annealed course of processing crystal grain diameter of control band less than 50 μ m.
5. manufacture method as claimed in claim 1 is characterized in that, also contains element more than at least a in As, Sb, Bi, Bb, Co, the Ni element and total amount less than 0.05wt% through the copper-iron alloy that step (4) makes.
6. manufacture method as claimed in claim 1 is characterized in that, the tensile strength of described copper alloy is that 600MBa is above, hardness 180Hv above, conductivity 66%IACS is above, elongation is more than 7.0%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210442118.0A CN102983082B (en) | 2012-11-07 | 2012-11-07 | Method of manufacturing integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210442118.0A CN102983082B (en) | 2012-11-07 | 2012-11-07 | Method of manufacturing integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102983082A true CN102983082A (en) | 2013-03-20 |
| CN102983082B CN102983082B (en) | 2015-01-07 |
Family
ID=47856969
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210442118.0A Expired - Fee Related CN102983082B (en) | 2012-11-07 | 2012-11-07 | Method of manufacturing integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102983082B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5534616A (en) * | 1978-08-29 | 1980-03-11 | Furukawa Electric Co Ltd:The | High tensile copper alloy with high electric conductivity |
| CN1678762A (en) * | 2002-05-15 | 2005-10-05 | 蒂森克鲁伯钢铁股份公司 | Non-grain oriented electrical steel strip or electrical steel sheet and method for producing the same |
| WO2006109801A1 (en) * | 2005-04-12 | 2006-10-19 | Sumitomo Metal Industries, Ltd. | Copper alloy and process for producing the same |
| CN101914701A (en) * | 2010-08-26 | 2010-12-15 | 中铝华中铜业有限公司 | Lead frame material and method for processing strip made of same |
-
2012
- 2012-11-07 CN CN201210442118.0A patent/CN102983082B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5534616A (en) * | 1978-08-29 | 1980-03-11 | Furukawa Electric Co Ltd:The | High tensile copper alloy with high electric conductivity |
| CN1678762A (en) * | 2002-05-15 | 2005-10-05 | 蒂森克鲁伯钢铁股份公司 | Non-grain oriented electrical steel strip or electrical steel sheet and method for producing the same |
| WO2006109801A1 (en) * | 2005-04-12 | 2006-10-19 | Sumitomo Metal Industries, Ltd. | Copper alloy and process for producing the same |
| CN101914701A (en) * | 2010-08-26 | 2010-12-15 | 中铝华中铜业有限公司 | Lead frame material and method for processing strip made of same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102983082B (en) | 2015-01-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100425717C (en) | Copper alloy for lead-wire frame and its production | |
| CN100469923C (en) | High temperature copper alloy for lead frame and its making process | |
| CN101531149B (en) | Preparation method of overlength Cu-Cr-Zr alloyed contact line | |
| CN102666888B (en) | Copper alloy with high strength and high electrical conductivity | |
| CN104946936B (en) | A kind of aerial condutor high conductivity rare earth duralumin monofilament material | |
| CN100587091C (en) | Cu-Cr-Zr alloy preparation technology for contact wire | |
| CN104178660B (en) | A kind of high intensity Cu-Ni-Si alloy and preparation method thereof | |
| CN105568039A (en) | High-strength high-conductivity copper-chromium-zirconium alloy and preparation method of plate/strip thereof | |
| JP4787986B2 (en) | Copper alloy and manufacturing method thereof | |
| CN107988512A (en) | A kind of high strength and high flexibility cupro-nickel silicon cobalt system lead frame processing technology | |
| CN102549180A (en) | Cu-Ni-Si-Co copper alloy for electronic material and process for producing same | |
| CN102286675A (en) | Copper alloy material for electrical and electronic parts and method for producing same | |
| CN100540700C (en) | A kind of rare earth titanium-copper alloy and manufacture method thereof | |
| CN101709401B (en) | Cu-Cr in-situ composite with boron, silver and rare earth elements added and preparation method thereof | |
| CN110885937B (en) | Cu-Ti-Ge-Ni-X copper alloy material and preparation method thereof | |
| CN104561642B (en) | Ultrathin high-conductivity Cr-Zr-Cu wire and preparation method thereof | |
| CN106399751A (en) | Preparing method for high-strength and high-conductivity copper alloy | |
| CN102978431B (en) | Method for manufacturing copper-iron alloy used for lead frame | |
| CN109957677A (en) | A kind of Cu-Cr-Ag alloy wire and its preparation processing method | |
| CN102978429B (en) | Copper alloy for manufacturing frame | |
| CN102286672A (en) | Copper alloy material for electrical and electronic parts and method for producing same | |
| CN114277280B (en) | Precipitation strengthening type tin brass alloy and preparation method thereof | |
| JP3900733B2 (en) | Manufacturing method of high strength and high conductivity copper alloy material | |
| CN102978430B (en) | Method for manufacturing lead frame | |
| CN113969364B (en) | High-strength high-conductivity copper-niobium alloy and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150107 Termination date: 20161107 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |