CN102978691A - Novel heating system of sapphire crystal growing furnace - Google Patents
Novel heating system of sapphire crystal growing furnace Download PDFInfo
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- CN102978691A CN102978691A CN2012105387238A CN201210538723A CN102978691A CN 102978691 A CN102978691 A CN 102978691A CN 2012105387238 A CN2012105387238 A CN 2012105387238A CN 201210538723 A CN201210538723 A CN 201210538723A CN 102978691 A CN102978691 A CN 102978691A
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- sapphire crystal
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Abstract
The invention discloses a novel heating system of a sapphire crystal growing furnace. The heating system comprises an upper heating body, a middle heating body and a bottom heating body. The heating system is flexible in regulation, stable in performance and low in processing cost, facilitates process regulation of a user, greatly reduces the forming time of the process technology, and also reduces the production cost.
Description
Technical field
The present invention relates to a kind of structure design of sapphire crystal growing furnace, especially a kind of heating system.
Background technology
LED Sapphire Substrate sheet processing technology has had the history of decades abroad, and has just just begun at home, since 2010, and domestic a large amount of Introduced From Abroad sapphire crystal growing furnaces.But owing to external blockade on new techniques and domestic technique team foundation deficiency, domestic sapphire crystal growth technology fails to reach desirable level always, and it is low to show as crystal growth yield rate, and production cost is high, and Technology is difficult for grasp etc.Domestic sapphire crystal growth technology KY technique is main flow at present, and the main equipment of introducing is the equipment that Muscovite each equipment vendor produces, and this equipment adopts the birdcage heating element.This heating element is after design is finished, the thermograde of crystal growth is also finalized the design, the thermal field that the reasons such as scaling loss of shielding along with insulating equipment cause changes, variation has also occured in the temperature environment of crystal growth, and this heating element can not change along with the variation of these ambient conditionss the temperature field, thereby can not regulate flexibly the thermograde of crystal growth, thereby cause at equipment and use the initial stage, the crystal growing state is better, to the later stage, can not satisfy the required ambient conditions of crystal growth, thereby the user must must scrap the thermal field materials such as thermoscreen when thermal field does not reach work-ing life, thereby has further increased production cost.In addition, the growth cycle of sapphire crystal growth is long, and take the 60kg crystal ingot of present main flow as example, growth cycle is about 18 days, and the whole structure of crystal growth will just can be known after 18 days, was unfavorable for that the user carries out the experiment of process aspect.
Summary of the invention
Technical problem to be solved by this invention provides the long brilliant stove heating system of a kind of novel sapphire, and it is long to solve the crystal growth cycle, the problem that cost is high.
For solving the problems of the technologies described above, technical scheme of the present invention is: a kind of novel sapphire crystal growing furnace heating system comprises heating element, middle part heating element and bottom heater, it is characterized in that described three part heating elements are regulated the required thermograde of furnace chamber crystal growth jointly.
Above-mentioned a kind of novel sapphire crystal growing furnace heating system, it is characterized in that, described top heating element hangs on the furnace wall by the tungsten electrode pawl that welds on 6 guipures, described middle part heating element is supported on the furnace wall by the tungsten electrode pawl that welds on 6 guipures, and described bottom heater is supported on the lower bell by 3 template guipures.
Above-mentioned a kind of novel sapphire crystal growing furnace heating system is characterized in that, described three part heating elements adopt the braiding of volution tungsten filament to form.
Above-mentioned a kind of novel sapphire crystal growing furnace heating system is characterized in that described three part heating elements all adopt the hub-and-spoke configuration three phase supply, can independent regulating power, be fixed in around the crucible and inside the thermoscreen.
Above-mentioned a kind of novel sapphire crystal growing furnace heating system is characterized in that, described upper heating element and middle part heating element consist of by 6 circular-arc braids.
Above-mentioned a kind of novel sapphire crystal growing furnace heating system is characterized in that described 6 circular-arc braids surround circular configuration, and 2 relative circular-arc braids are a phase, have 3 phases, and the tail end short circuit adopts the three phase supply wye connection.
Above-mentioned a kind of novel sapphire crystal growing furnace heating system is characterized in that described bottom heater is made of 3 template guipures, and the tail end short circuit adopts wye connection.
Above-mentioned a kind of novel sapphire crystal growing furnace heating system is characterized in that, described heating system is used power control, sharpness of regulation ten thousand/and, lasting accuracy 5/10000ths.
The invention has the advantages that: this kind heating system technique flexible, stable performance, tooling cost is low, makes things convenient for the user to carry out the technique adjustment, has reduced greatly the time of Technology moulding, has also reduced production cost simultaneously.
Description of drawings
The present invention is further detailed explanation below in conjunction with the drawings and specific embodiments.
Fig. 1 is the sapphire crystal growing furnace overall schematic.
Fig. 2 is the bottom heater synoptic diagram.
Fig. 3 is top heating element and middle part heating element synoptic diagram.
Fig. 4 is three groups of heating element assembling synoptic diagram.
Embodiment
Shown in Figure 1, the sapphire crystal growing furnace heating system comprises heating element 17, and middle part heating element 8 and bottom heater 9, three part heating elements are fixed in around the crucible 2, side thermoscreen 5, and top thermoscreen 7 and bottom thermal insulation shield 6 the insides.For preventing that the aging temperature that causes of the thermal field component such as thermoscreen from changing and be convenient to the experiment that the client carries out process aspect, the power of three part heating elements can independently be regulated, and forms the crystal needed thermograde of growing.
Fig. 2, Fig. 3 and shown in Figure 4, the top heating element hangs in the electrode stake 12 on the furnace shell 1 by 6 electrode pawls 16, and the middle part heating element is identical with the top heating element, is supported on the furnace shell by 6 electrode pawls 16 in 1 the electrode stake 12.Bottom heater 9 is fixed in the electrode stake 13 on the lower furnace shell 3 by electrode pawl 14 and supporting pile 19.Three part heating elements all adopt taenidium to be woven into mesh belt structure, adopt the power supply of three-phase wye connection.For guaranteeing the homogeneity of heating, top 17 and middle part heating element 8 all use 6 circular-arc braids 15 to surround circular configuration, and 2 relative on circular arc braids are a phase, total three-phase, and the afterbody short circuit forms wye connection.It is tabular that bottom heater 9 uses 3 taenidium braids 18 to be woven into, and the afterbody short circuit forms wye connection.Be guaranteeing the stability of crystal growth temperature, require the heating element power supply to use power control, the power regulation precision is ten thousand/, power stability power is 5/10000ths.
Claims (8)
1. a novel sapphire crystal growing furnace heating system comprises heating element, and middle part heating element and bottom heater is characterized in that, described three part heating elements are regulated the required thermograde of furnace chamber crystal growth jointly.
2. according to right 1 described a kind of novel sapphire crystal growing furnace heating system, it is characterized in that, described top heating element hangs on the furnace wall by the tungsten electrode pawl that welds on 6 guipures, described middle part heating element is supported on the furnace wall by the tungsten electrode pawl that welds on 6 guipures, and described bottom heater is supported on the lower bell by 3 template guipures.
3. according to right 1 described a kind of novel sapphire crystal growing furnace heating system, it is characterized in that described three part heating elements adopt the braiding of volution tungsten filament to form.
4. according to right 1 described a kind of novel sapphire crystal growing furnace heating system, it is characterized in that described three part heating elements all adopt the hub-and-spoke configuration three phase supply, can independent regulating power, be fixed in around the crucible and inside the thermoscreen.
5. according to right 1 described a kind of novel sapphire crystal growing furnace heating system, it is characterized in that described upper heating element and middle part heating element consist of by 6 circular-arc braids.
6. according to right 5 described a kind of novel sapphire crystal growing furnace heating systems, it is characterized in that described 6 circular-arc braids surround circular configuration, 2 relative circular-arc braids are a phase, have 3 phases, and the tail end short circuit adopts the three phase supply wye connection.
7. according to right 1 described a kind of novel sapphire crystal growing furnace heating system, it is characterized in that described bottom heater is made of 3 template guipures, the tail end short circuit adopts wye connection.
8. according to right 1 described a kind of novel sapphire crystal growing furnace heating system, it is characterized in that described heating system is used power control, sharpness of regulation ten thousand/, lasting accuracy 5/10000ths.
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| CN2012105387238A CN102978691A (en) | 2012-12-13 | 2012-12-13 | Novel heating system of sapphire crystal growing furnace |
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| CN2012105387238A CN102978691A (en) | 2012-12-13 | 2012-12-13 | Novel heating system of sapphire crystal growing furnace |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103469295A (en) * | 2013-03-29 | 2013-12-25 | 浙江晶盛机电股份有限公司 | Sapphire crystal growth furnace having three heaters |
| CN104073875A (en) * | 2013-03-28 | 2014-10-01 | 浙江特锐新能源有限公司 | Preparation method of large-size sapphire crystal dynamic temperature field |
| CN104451892A (en) * | 2014-12-10 | 2015-03-25 | 上海汇淬光学科技有限公司 | Multistage graphite heating system of sapphire crystal growth equipment and using method of multistage graphite heating system |
| CN104651934A (en) * | 2014-10-17 | 2015-05-27 | 洛阳市西格马炉业有限公司 | Energy-saving sapphire crystal growth furnace |
| CN105200529A (en) * | 2015-09-29 | 2015-12-30 | 郎业方 | Double-region heater for single-crystal furnace |
| CN105386125A (en) * | 2015-12-03 | 2016-03-09 | 河南西格马晶体科技有限公司 | Control method for preparation of sapphire monocrystal |
| CN105401211A (en) * | 2014-08-08 | 2016-03-16 | 上海超硅半导体有限公司 | Crystal growing furnace and method for drawing C-axis sapphire single crystal |
| CN108277534A (en) * | 2018-04-27 | 2018-07-13 | 济南金曼顿自动化技术有限公司 | A kind of graphite resistance heating SiC crystal growth furnace |
| CN111501096A (en) * | 2020-07-02 | 2020-08-07 | 眉山博雅新材料有限公司 | Crystal preparation device |
| US11408089B2 (en) | 2020-05-06 | 2022-08-09 | Meishan Boya Advanced Materials Co., Ltd. | Devices and methods for growing crystals |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102051674A (en) * | 2011-01-20 | 2011-05-11 | 王楚雯 | Monocrystal ingot manufacturing device |
| CN102345161A (en) * | 2011-08-29 | 2012-02-08 | 江苏同人电子有限公司 | Crystal growth furnace heater and sapphire crystal growth furnace |
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- 2012-12-13 CN CN2012105387238A patent/CN102978691A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102051674A (en) * | 2011-01-20 | 2011-05-11 | 王楚雯 | Monocrystal ingot manufacturing device |
| CN102345161A (en) * | 2011-08-29 | 2012-02-08 | 江苏同人电子有限公司 | Crystal growth furnace heater and sapphire crystal growth furnace |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104073875A (en) * | 2013-03-28 | 2014-10-01 | 浙江特锐新能源有限公司 | Preparation method of large-size sapphire crystal dynamic temperature field |
| CN103469295A (en) * | 2013-03-29 | 2013-12-25 | 浙江晶盛机电股份有限公司 | Sapphire crystal growth furnace having three heaters |
| CN105401211A (en) * | 2014-08-08 | 2016-03-16 | 上海超硅半导体有限公司 | Crystal growing furnace and method for drawing C-axis sapphire single crystal |
| CN105401211B (en) * | 2014-08-08 | 2017-12-26 | 上海超硅半导体有限公司 | Draw C axles sapphire single crystal growth furnace and method |
| CN104651934A (en) * | 2014-10-17 | 2015-05-27 | 洛阳市西格马炉业有限公司 | Energy-saving sapphire crystal growth furnace |
| CN104651934B (en) * | 2014-10-17 | 2017-12-01 | 洛阳西格马炉业股份有限公司 | A kind of energy-saving sapphire crystal growing furnace |
| CN104451892A (en) * | 2014-12-10 | 2015-03-25 | 上海汇淬光学科技有限公司 | Multistage graphite heating system of sapphire crystal growth equipment and using method of multistage graphite heating system |
| CN105200529A (en) * | 2015-09-29 | 2015-12-30 | 郎业方 | Double-region heater for single-crystal furnace |
| CN105386125A (en) * | 2015-12-03 | 2016-03-09 | 河南西格马晶体科技有限公司 | Control method for preparation of sapphire monocrystal |
| CN108277534A (en) * | 2018-04-27 | 2018-07-13 | 济南金曼顿自动化技术有限公司 | A kind of graphite resistance heating SiC crystal growth furnace |
| US11408089B2 (en) | 2020-05-06 | 2022-08-09 | Meishan Boya Advanced Materials Co., Ltd. | Devices and methods for growing crystals |
| CN111501096A (en) * | 2020-07-02 | 2020-08-07 | 眉山博雅新材料有限公司 | Crystal preparation device |
| CN111501096B (en) * | 2020-07-02 | 2020-11-10 | 眉山博雅新材料有限公司 | Crystal preparation device |
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Application publication date: 20130320 |