CN201670873U - Substrate heating furnace for MOCVD - Google Patents
Substrate heating furnace for MOCVD Download PDFInfo
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- CN201670873U CN201670873U CN2010201753157U CN201020175315U CN201670873U CN 201670873 U CN201670873 U CN 201670873U CN 2010201753157 U CN2010201753157 U CN 2010201753157U CN 201020175315 U CN201020175315 U CN 201020175315U CN 201670873 U CN201670873 U CN 201670873U
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- heater
- heating furnace
- mocvd
- substrate heating
- heating
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Abstract
The utility model discloses a substrate heating furnace for MOCVD, which comprises a furnace body, heating resistance wires and an electrode. The utility model is characterized in that the furnace body is in a cylindrical structure erected and arranged above a high-temperature-resistance insulation separation plate, a plurality of groups of heating resistance wires uniformly distributed in a plane or distributed in various planes in a three-dimensional way are penetrated and arranged in the furnace body, in addition, a heat shielding layer is arranged on the annular outer wall of the furnace body, and the electrode used for an external power supply is arranged at the lower side of the insulation separation plate. When the heating furnace of the utility model is used, on one hand, the power density of the electric heating furnace and the maximum heating temperature in vacuum at the normal pressure can be improved, the temperature distribution can be finely regulated for reaching the goal of uniform heating, in addition, the heat shielding layer is formed by metal thin plates and heat insulation materials arranged at intervals, and the temperature gradient of the edge of the round surface of the furnace body is reduced, so the heating furnace forms a constant temperature region, and the temperature can be fast lowered down after the power failure.
Description
Technical field
The utility model relates to a kind of industrial processes electrothermal oven, relates in particular to a kind of substrate heating furnace that metal-organic chemical vapor deposition equipment prepares semi-conductor chip or other unicircuit that is used for.
Background technology
MOCVD is the english abbreviation of organometallics chemical vapor deposition (Metal-organic Chemieal VaporDePosition).MOCVD is a kind of novel vapor phase epitaxial growth technology that grows up on the basis of vapor phase epitaxial growth (VPE).It with hydride of the organic compound of III family, II family element and V, VI family element etc. as the crystal growth source material, in the pyrolysis mode at the enterprising promoting the circulation of qi phase epitaxy of substrate, the thin layer monocrystal material of grow various III-V family, II-VI compound semiconductor and their multivariate solid solution.Usually the crystal growth in the MOCVD system all is at normal pressure or the down logical H of low pressure (10-100Torr)
2Cold wall quartz (stainless steel) reaction chamber in carry out, underlayer temperature is 500-1200 ℃, heats graphite base (substrate base is above graphite base), H with radio-frequency induction
2Fluid supply bubbling by Controllable Temperature carries metallorganics to the vitellarium.
This requisite integral part of MOCVD system comprises source supply system, gas transport system, reaction chamber and heating system, exhaust treatment system and safeguard protection and warning.Heating system part wherein, traditional heating stove heat temperature raising homogeneity slow, Heating temperature be cannot say for sure card, and operation often has problem and is difficult for long-play under hot conditions.This mainly is because many-side such as the resistance heating material of process furnace selects and layout is unreasonable, the global design structure of stove and subregion control have problems causes.Therefore, for adapting to the requirement of MOCVD epitaxy monocrystal thin films, it is imperative to improve heating system.
Summary of the invention
In view of the defective that above-mentioned prior art exists, the purpose of this utility model is the substrate heating furnace that proposes a kind of MOCVD of being used for, and is the heating system ecotopia that MOCVD technology provides a kind of homogeneous heating, heat-up rate is fast, thermal capacity is little, cooling is fast.
The purpose of this utility model will be achieved by the following technical programs:
A kind of substrate heating furnace that is used for MOCVD, comprise body of heater, resistive heater and electrode, it is characterized in that: described body of heater is a cylindrical-shaped structure, be set up on the resistant to elevated temperatures insulating barrier, be equipped with one group of above resistive heater in the body of heater, and the ring-type outer wall of described body of heater is provided with thermal shield, and the insulating barrier downside is provided with the electrode that is used for external source.
Further, above-mentioned a kind of substrate heating furnace that is used for MOCVD, wherein should many group resistive heaters along body of heater disc uniform distribution ringwise.
Further, be equipped with four groups of resistive heaters on the above-mentioned same body of heater disc, wherein one group of resistive heater wears at interval and is centered around body of heater disc outmost turns, and in addition three groups of resistive heaters are the diameter shape ring ring that successively decreases and are placed in body of heater disc center mutually; Or wherein three groups of heating nichrome wire to be the hexagonal angle degree respectively arranged evenly, middlely be curved repeatedly a plurality of " C " shape lasso of another group nichrome wire around formation.
Further, above-mentioned a kind of substrate heating furnace that is used for MOCVD, wherein how the group resistive heaters are along the equally distributed ringwise while of body of heater disc, distribute along body of heater is axially three-dimensional, and should the solid distribution can also be that solid is dislocatedly distributed.
Further, above-mentioned a kind of substrate heating furnace that is used for MOCVD, the wherein multilayered structure of this thermal shield for being stacked to constitute by refractory metal plate and high-temperature insulation material.
After the utility model process furnace was able to application implementation, its outstanding effect was:
Electrothermal oven structure of the present utility model has improved the power density of electrothermal oven and the maximum heating temperature under the vacuum normal pressure on the one hand; Adopt the layout of many group resistive heaters, attemperation distributes more meticulously, reaches the purpose of homogeneous heating; And adopt metal sheet and insulating material to form thermal shield at interval, reduced the thermograde at body of heater disc edge, make process furnace form the flat-temperature zone, and cooling rapidly after outage.
Description of drawings
Fig. 1 is that the axle of the utility model process furnace cuts open structural representation;
Fig. 2 is the structural representation of a preferred embodiment of the utility model process furnace resistance wire installation.
Embodiment
Following constipation closes the embodiment accompanying drawing, embodiment of the present utility model is described in further detail, so that technical solutions of the utility model are easier to understand, grasp.
As shown in Figure 1, be that the axle of the utility model process furnace cuts open structural representation.Can clearly be seen that from shown in the figure: this is used for the substrate heating furnace of MOCVD, resistance heating material, body of heater 2, thermal shield 3, insulating barrier 4, electrode 5 parts such as grade constitute, wherein this resistance heating material is mainly resistive heater 1, this body of heater 2 is cylindric, be set up on the resistant to elevated temperatures insulating barrier 4, be equipped with one group of above resistive heater 1 in each disc of body of heater 2, this body of heater disc that is provided with resistive heater 1 can be the individual layer distributed architecture, also can be the three-dimensional arrangement that distributes along the axial multilayer of body of heater, and more can be the three-dimensional arrangement that multilayer is dislocatedly distributed.
In addition, the ring-type outer wall of this body of heater 2 is provided with thermal shield 3, and the multilayered structure of this thermal shield 3 for being stacked to constitute by refractory metal plate and high-temperature insulation material, and uncovered up and down help rapid temperature rise and drop.And these insulating barrier 4 downsides are provided with electrode 5 or its extraction electrode 6 that is used for external source, and electrode is fixed on the insulating material, and fixed form is to connect by the insulation permanent sleeve.
Be the basic structure that the utility model is used for the substrate heating furnace of MOCVD more than, it also can have further prioritization scheme:
As shown in Figures 2 and 3, be the distributed architecture synoptic diagram of the utility model process furnace resistive heater on arbitrary body of heater disc.Though two kinds of embodiments are and wear four groups of resistive heaters on same body of heater discs.But the difference of distribution mode specifically: the former is that wherein one group of resistive heater wears at interval and is centered around body of heater disc outmost turns, and three groups of resistive heaters are the diameter shape ring ring that successively decreases and are placed in body of heater disc center mutually in addition; And the latter be wherein three groups of heating nichrome wire to be the hexagonal angle degree respectively arranged evenly, middlely be curved repeatedly a plurality of " C " shape lasso of another group nichrome wire around formation.No matter adopt any distributed architecture, all be equal to and obtain making on the body of heater disc uniform distribution resistance heating wire's effect ringwise.
Claims (7)
1. substrate heating furnace that is used for MOCVD, comprise body of heater, resistive heater and electrode, it is characterized in that: described body of heater is a cylindrical-shaped structure, be set up on the resistant to elevated temperatures insulating barrier, be equipped with one group of above resistive heater in the body of heater, and the ring-type outer wall of described body of heater is provided with thermal shield, and is provided with the electrode that is used for external source at the insulating barrier downside.
2. a kind of substrate heating furnace that is used for MOCVD according to claim 1 is characterized in that: described one group of above resistive heater is along body of heater disc uniform distribution ringwise.
3. a kind of substrate heating furnace that is used for MOCVD according to claim 2, it is characterized in that: be equipped with four groups of resistive heaters on the described same body of heater disc, wherein one group of resistive heater wears at interval and is centered around body of heater disc outmost turns, and in addition three groups of resistive heaters are the diameter shape ring ring that successively decreases and are placed in body of heater disc center mutually.
4. a kind of substrate heating furnace that is used for MOCVD according to claim 2, it is characterized in that: be equipped with four groups of resistive heaters on former of the described same body of heater, wherein to be the hexagonal angle degree respectively arranged evenly for three groups of heating nichrome wire, middlely is curved repeatedly a plurality of " C " shape lasso around formation of another group nichrome wire.
5. a kind of substrate heating furnace that is used for MOCVD according to claim 1 is characterized in that: described one group of above resistive heater distributed along body of heater is axially three-dimensional along the equally distributed ringwise while of body of heater disc.
6. will remove the substrate heating furnace of 5 described a kind of MOCVD of being used for according to right, it is characterized in that: described one group of above resistive heater axially is solid along body of heater and is dislocatedly distributed.
7. a kind of substrate heating furnace that is used for MOCVD according to claim 1 is characterized in that: the multilayered structure of described thermal shield for being stacked to constitute by refractory metal plate and high-temperature insulation material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201753157U CN201670873U (en) | 2010-04-30 | 2010-04-30 | Substrate heating furnace for MOCVD |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201753157U CN201670873U (en) | 2010-04-30 | 2010-04-30 | Substrate heating furnace for MOCVD |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201670873U true CN201670873U (en) | 2010-12-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010201753157U Expired - Fee Related CN201670873U (en) | 2010-04-30 | 2010-04-30 | Substrate heating furnace for MOCVD |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101899650A (en) * | 2010-04-30 | 2010-12-01 | 苏州索乐机电设备有限公司 | Substrate heating furnace of MOCVD |
| CN102517562A (en) * | 2011-12-15 | 2012-06-27 | 常州星海电子有限公司 | Device for manufacturing thin-film battery in way of vertical gradient condensation |
| CN103305815A (en) * | 2013-06-06 | 2013-09-18 | 光垒光电科技（上海）有限公司 | MOCVD (Metal Organic Chemical Vapor Deposition) equipment and heating device thereof |
| CN103924221A (en) * | 2014-05-10 | 2014-07-16 | 长沙市博垒德电子科技有限公司 | High-power heater applicable to metal-organic chemical vapor deposition equipment |
| CN104498906A (en) * | 2014-11-27 | 2015-04-08 | 中国电子科技集团公司第四十八研究所 | MOCVD reactor |
| CN105862013A (en) * | 2016-06-17 | 2016-08-17 | 南京大学 | High-temperature heating device applied to miniature MOCVD system |
-
2010
- 2010-04-30 CN CN2010201753157U patent/CN201670873U/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101899650A (en) * | 2010-04-30 | 2010-12-01 | 苏州索乐机电设备有限公司 | Substrate heating furnace of MOCVD |
| CN102517562A (en) * | 2011-12-15 | 2012-06-27 | 常州星海电子有限公司 | Device for manufacturing thin-film battery in way of vertical gradient condensation |
| CN102517562B (en) * | 2011-12-15 | 2014-01-01 | 常州星海电子有限公司 | Device for manufacturing thin-film battery in way of vertical gradient condensation |
| CN103305815A (en) * | 2013-06-06 | 2013-09-18 | 光垒光电科技（上海）有限公司 | MOCVD (Metal Organic Chemical Vapor Deposition) equipment and heating device thereof |
| CN103924221A (en) * | 2014-05-10 | 2014-07-16 | 长沙市博垒德电子科技有限公司 | High-power heater applicable to metal-organic chemical vapor deposition equipment |
| CN104498906A (en) * | 2014-11-27 | 2015-04-08 | 中国电子科技集团公司第四十八研究所 | MOCVD reactor |
| CN105862013A (en) * | 2016-06-17 | 2016-08-17 | 南京大学 | High-temperature heating device applied to miniature MOCVD system |
| CN105862013B (en) * | 2016-06-17 | 2018-07-06 | 南京大学 | A kind of high-temperature heating equipment applied to small-sized MOCVD systems |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101215 Termination date: 20110430 |