CN102978573A - Evaporation source for cadmium telluride (CdTe) thin film deposition and preparation method thereof - Google Patents
Evaporation source for cadmium telluride (CdTe) thin film deposition and preparation method thereof Download PDFInfo
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Abstract
The present invention provides an evaporation source for cadmium telluride (CdTe) thin film deposition and a preparation method thereof, belonging to the techincal field of thin-film solar cells. The preparation method comprises the following steps: (1) mixing in proportion to form a powder mixture including cadmium metal powder and elemental tellurium powder; (2) tiling the powder mixture on the thermal evaporation source of a thermal evaporation apparatus; and (3) in temperature conditions of 500 DEG C to 900 DEG C, vapor-plating the powder mixture onto a smooth evaporation source substrate to form the cadmium telluride compound. The evaporation source is formed by using the preparation method of the present invention on. The preparation method and the evaporation source have the characteristic of low cost.
Description
Technical field
The invention belongs to the thin film solar cell technical field, relate to for the preparation of the evaporation source of the CdTe film of cadmium telluride (CdTe) thin film solar cell and the preparation method of this evaporation source.
Background technology
In technical field of new energies, it is more and more extensive that solar cell is used, and industry member pursues the low cost fabrication of solar cell constantly, thereby realize the extensive widespread use of solar cell.Wherein, the relative silicon single crystal of thin film solar cell or polycrystalline silicon solar cell are having good prospects aspect the low-cost characteristic, and therefore, thin film solar cell is deepened continuously to be studied and the beginning commercial applications.
The CdTe thin film solar cell is the thin film solar cell of the main Types of current beginning commercial applications, in the CdTe thin film solar cell, the CdTe layer of p-type and the CdS(Cadmium Sulfide of N-shaped) layer formation pn heterojunction, it can form photogenerated current at the two ends of pn heterojunction under photovoltaic effect.The film deposition process that therefore, must comprise CdTe in the preparation process of CdTe thin film solar cell.
Near space subliming method (CSS) is usually used in the CdTe film deposition process in the preparation of CdTe thin film solar cell, it uses with the evaporation source of CdTe and for the substrate that deposits the CdTe film, close together between evaporation source and the substrate, therefore, the CSS method to the planeness of evaporation source just have higher requirement (for example, require planeness reach ± 0.5mm).In the prior art, normally CdTe is evaporated to first smooth graphite or the quartzy upper evaporation source that forms opposed flattened, then use this evaporation source to carry out the CdTe film deposition process of CSS, thereby satisfy the high-flatness requirement of the evaporation source of CSS, this process is commonly called the source of turning over.
When prior art prepares evaporation source by the source of turning over, generally be to adopt synthetic high-purity CdTe compound powder as raw material; The synthetic method of high-purity CdTe compound be mostly the tellurium that will mix or cadmium high purity elemental in the vitreosil bottle of sealing, heat with synthetic CdTe compound, final powder is broken into needed CdTe compound powder.This very strict environment and the process control of method needs for preparing evaporation source, therefore, CdTe compound powder more expensive (per kilogram is more than 4000 yuan usually), the cost of evaporation source is also expensive, and then the low cost preparation of restriction CdTe solar cell.
Summary of the invention
The object of the invention is to, reduce the cost for the preparation of the evaporation source of solar cell.
For realizing above purpose or other purpose, the invention provides following technical scheme.
According to an aspect of of the present present invention, a kind of preparation method of evaporation source is provided, described evaporation source is for the preparation of the Cadimium telluride thin film of cadmium telluride film solar cells, and the method may further comprise the steps:
(1) is mixed in proportion the powdered mixture that formation comprises cadmium metal powder and tellurium simple substance powder;
(2) described powdered mixture is tiled on the thermal evaporation sources of thermal evaporation apparatus; And
(3) evaporation to smooth evaporation source substrate forms the cadmium telluride compound under 500 ℃ to 900 ℃ temperature condition.
According to a preparation method's provided by the invention embodiment, wherein, the particle diameter of described cadmium metal powder and tellurium simple substance powder all is less than or equal to 100 orders.
According to preparation method's provided by the invention another embodiment, wherein, in the described step (1), before mixing or after mixing, also comprise screening process, so that the particle diameter of described cadmium metal powder and tellurium simple substance powder all is less than or equal to 100 orders.
According to a preparation method's provided by the invention again embodiment, wherein, in the described step (1), be mixed in proportion first cadmium metal and simple substance tellurium, pulverize described cadmium metal and simple substance tellurium to form described powdered mixture again.
In described preparation method before, preferably, the purity of described cadmium metal is more than or equal to 99.99%, and the purity of described simple substance tellurium is more than or equal to 99.99%.
Also embodiment according to preparation method provided by the invention, wherein, in the described step (1), crushing metal cadmium and simple substance tellurium are with the described cadmium metal powder of corresponding formation and tellurium simple substance powder, be mixed in proportion described cadmium metal powder and tellurium simple substance powder to form described powdered mixture more respectively.
In described preparation method before, preferably, the purity of cadmium metal powder is more than or equal to 99.99%, and the purity of described tellurium simple substance powder is more than or equal to 99.99%.
In described preparation method's before embodiment, preferably, the scope of the stoichiometric ratio of described cadmium metal powder and tellurium simple substance powder is 1:2 to 2:1.
In one example, the stoichiometric ratio of described cadmium metal powder and tellurium simple substance powder is 1:1.1, the polycrystalline cadmium telluride that described cadmium telluride compound is rich tellurium.
In a further example, the stoichiometric ratio of described cadmium metal powder and tellurium simple substance powder is 1:1, and described cadmium telluride compound is unadulterated polycrystalline cadmium telluride.
In described preparation method's before embodiment, preferably, in the described step (2), the scope of the thickness of the described powdered mixture of tiling is 1 millimeter to 10 millimeters.
In described preparation method's before embodiment, preferably, in the described step (2), the thickness difference of the described powdered mixture of tiling is within 1 millimeter.
In described preparation method's before embodiment, preferably, under vacuum condition or inert gas atmosphere condition, finish in the described step (3).
Another embodiment according to preparation method provided by the invention, wherein, it is characterized in that, in the described step (3), described powdered mixture heats up by two-part and realizes 500 ℃ to 900 ℃ temperature condition, wherein, first paragraph is for being warming up to 350-450 ℃ of temperature range and being incubated 10 to 25 minutes, and second segment is for being warming up to 500 ℃ of-900 ℃ of temperature ranges.
According to preparation method's provided by the invention more another embodiment, wherein, in the described step (3), described powdered mixture heats up by one-part form and directly realizes 500 ℃ to 900 ℃ temperature condition.
In described preparation method's before embodiment, preferably, the planeness that described evaporation source substrate is opposite in the one side of described powdered mixture is less than or equal to ± 0.5mm.
In described preparation method's before embodiment, preferably, described evaporation source substrate is graphite cake or quartz plate.
According to another aspect of the present invention, a kind of evaporation source is provided, it comprises:
The evaporation source substrate; And
The cadmium telluride compound layer, it is used the method preparation that reaches as previously discussed and is formed on the described evaporation source substrate.
According to an embodiment of evaporation source provided by the invention, wherein, the planeness that described evaporation source substrate is opposite in the one side of described powdered mixture is less than or equal to ± 0.5mm
Preferably, described evaporation source substrate is graphite cake or quartz plate.
According to the another embodiment of evaporation source provided by the invention, wherein, described evaporation source is employed to prepare the Cadimium telluride thin film of cadmium telluride film solar cells in the near space subliming method.
Technique effect of the present invention is, this preparation method can directly prepare the evaporation source of CdTe with metal Cd and simple substance Te, do not rely on the CdTe compound formation, and therefore, preparation cost reduces greatly, and then can make the cost of CdTe thin film solar cell.
Description of drawings
From following detailed description by reference to the accompanying drawings, will make above and other objects of the present invention and advantage more fully clear, wherein, same or analogous key element adopts identical label to represent.
Fig. 1 is preparation method's process synoptic diagram of the evaporation source that provides according to first embodiment of the invention.
Fig. 2 is the XRD(X-ray Diffraction by the evaporation source of the prepared formation of preparation method embodiment illustrated in fig. 1, X-ray diffraction) collection of illustrative plates.
Fig. 3 is preparation method's process synoptic diagram of the evaporation source that provides according to second embodiment of the invention.
Fig. 4 is the XRD figure spectrum by the evaporation source of the prepared formation of preparation method embodiment illustrated in fig. 3.
Embodiment
The below introduces is a plurality of some in may embodiment of the present invention, aims to provide basic understanding of the present invention, is not intended to confirm key of the present invention or conclusive key element or limits claimed scope.Understand easily, according to technical scheme of the present invention, do not changing under the connotation of the present invention other implementation that one of ordinary skill in the art can propose mutually to replace.Therefore, following embodiment and accompanying drawing only are the exemplary illustrations to technical scheme of the present invention, and should not be considered as of the present invention all or be considered as restriction or restriction to technical solution of the present invention.
Preparation method's process synoptic diagram of the evaporation source that provides according to first embodiment of the invention is provided.In this embodiment, this evaporation source is applied in the process of CdTe film of near space subliming method (CSS) preparation solar cell, but the application of this evaporation source is not limited by the embodiment of the invention, be similar in the CdTe film deposition process of the evaporation source near space subliming method, that require high-flatness, all can use this evaporation source.Below describe preparation method's process shown in Fig. 1 in detail.
At first, step S110 provides metal Cd and simple substance Te raw material.
In this step, can be with metal Cd and the simple substance Te raw material of bulk, preferably, metal Cd and simple substance Te are highly purified raw material, like this, can avoid other doped element of mixing in the CdTe compound that forms, the purity of metal Cd is more than or equal to 99.99%, the purity of simple substance Te is the 4N material more than or equal to 99.99%.
Further, step S120 forms the Cd metal-powder, pulverizes simple substance Te formation Te simple substance powder with ball milling method crushing metal Cd.
In this step, dividually abrasive metal Cd and simple substance Te are to form respectively Cd metal-powder and Te simple substance powder.The purity of metal Cd more than or equal to 99.99%, the purity of simple substance Te more than or equal to 99.99% situation under, the purity of the Cd metal-powder that forms that grinds also can be more than or equal to 99.99%, and the purity of the Te simple substance powder that forms that grinds also can be more than or equal to 99.99%.Need to prove and pulverize the ball milling method that the method that forms powder is not limited to present embodiment.
Further, step S125 uses screen cloth to filter out particle diameter and is less than or equal to 100 purpose Cd metal-powders and Te simple substance powder.When the particle diameter of powder was less than or equal to 100 order, the powdered mixture that is conducive in the step thereafter evenly mixed, thereby also was conducive to the homogeneity in the evaporation step thereafter.
Further, step S130 forms powdered mixture by certain stoichiometric ratio proportioning Cd metal-powder and Te simple substance powder.
In this step, the scope of stoichiometric ratio can be 1:2 to 2:1, and in this example, the stoichiometric ratio that can select Cd metal-powder and Te simple substance powder is 1:1 substantially.
Further, step S140 tiles this powdered mixture on the thermal evaporation sources of thermal evaporation apparatus.
In this step, can the powdered mixture that proportioning is good be tiled on the thermal evaporation sources of turning over source device (thermal evaporation apparatus) tool using.Preferably, the scope of the thickness of the powdered mixture of tiling is 1-10mm, for example, and 4mm; Simultaneously, for guaranteeing the planarization of tiling, the thickness difference of the powdered mixture of tiling is within 1 millimeter.
Further, step S150 carries out the fs intensification with the powdered mixture on the thermal evaporation sources under vacuum condition, be warming up to 350-400 ℃.
In this embodiment, selected the temperature-rising method of sectional type.Realize the fs intensification among this step S150, for example, can be warming up to 400 ℃ by room temperature.In other embodiments, also can under the inert gas atmosphere condition, finish this step.
Further, step S160 is incubated 10-25 minute.For example, can be 400 ℃ of lower insulations 20 minutes.By this step, can realize powdered mixture pre-reaction, get rid of gas in the powdered mixture and water vapour etc., and can realize preheating to the evaporation source substrate.
Further, step S170 carries out subordinate phase with the powdered mixture on the thermal evaporation sources and heats up under vacuum condition, be warming up to 500-900 ℃.
In this step, realize that subordinate phase heats up, this temperature is the temperature of evaporation.For example, can be chosen as 650 ℃.
Further, step S180 is incubated 20 minutes evaporations to form the CdTe compound at the evaporation source substrate.
In this step, the evaporation source substrate is opposite on the one side of powdered mixture and is formed by evaporation to the CdTe compound, preferably, is the planarization of the evaporation source that guarantees to form, and the planeness that the evaporation source substrate is opposite in the one side of powdered mixture is less than or equal to ± 0.5mm; The evaporation source substrate specifically can be selected graphite cake or quartz plate.
Further, step S190, cooling down.
So far, the preparation process of CdTe evaporation source is finished substantially, has also formed the evaporation source of this invention the first embodiment by this preparation process.This evaporation source comprises graphite cake or quartz plate substrate and uses above procedure and is formed at CdTe compound on this substrate.
Figure 2 shows that the XRD figure spectrum by the evaporation source of the prepared formation of preparation method embodiment illustrated in fig. 1.As can be seen from Figure 2, the CdTe characteristic peak is complete, other impurity peaks do not occur, and formed CdTe compound is unadulterated polycrystalline cadmium telluride.
Preparation method's process synoptic diagram of the evaporation source that provides according to second embodiment of the invention is provided.Describe this preparation method's process in detail below in conjunction with Fig. 3.
At first, step S310, by certain stoichiometric ratio metal Cd and simple substance Te raw material be provided.
In this step, can be with metal Cd and the simple substance Te raw material of bulk, preferably, metal Cd and simple substance Te are highly purified raw material, like this, can avoid other doped element of mixing in the CdTe compound that forms, the purity of metal Cd is more than or equal to 99.99%, and the purity of simple substance Te is more than or equal to 99.99%.The scope of stoichiometric ratio can be 1:2 to 2:1, and in this example, the stoichiometric ratio that can select metal Cd and simple substance Te is 1:1.1 substantially.
Further, step S320 with ball milling method while crushing metal Cd and simple substance Te, forms the powdered mixture of Cd metal-powder and Te simple substance powder constituent.
In this step, metal Cd and simple substance Te are polished to form the powdered mixture of Cd metal-powder and Te simple substance powder constituent simultaneously.Need to prove and pulverize the ball milling method that the method that forms powder is not limited to present embodiment.And after the pulverizing, the stoichiometric ratio of the powdered mixture of formation does not change, and for example, the stoichiometric ratio of the Cd metal-powder in the powdered mixture and Te simple substance powder is 1:1.1 substantially.
Further, step S330 uses screen cloth to filter out particle diameter and is less than or equal to 100 purpose Cd metal-powders and Te simple substance powder.When the particle diameter of powder is less than or equal to 100 order, is conducive to powdered mixture and evenly mixes, thereby also be conducive to homogeneity in the evaporation step thereafter.
Further, step S340 tiles this powdered mixture on the thermal evaporation sources of thermal evaporation apparatus.
In this step, can the powdered mixture that proportioning is good be tiled on the thermal evaporation sources of turning over source device (thermal evaporation apparatus) tool using.Preferably, the scope of the thickness of the powdered mixture of tiling is 1-10mm, for example, and 4mm; Simultaneously, for guaranteeing the planarization of tiling, the thickness difference of the powdered mixture of tiling is within 1mm.
Further, step S350 is warming up to 500-900 ℃ with the powdered mixture on the thermal evaporation sources under vacuum condition.
In this embodiment, selected the temperature-rising method of one-part form.Among this step S550, can be warming up to 650 ℃ by room temperature.In other embodiments, also can under the inert gas atmosphere condition, finish this step.
Further, step S360 is incubated 20 minutes evaporations to form the CdTe compound at the evaporation source substrate.
In this step, the evaporation source substrate is opposite on the one side of powdered mixture and is formed by evaporation to the CdTe compound, preferably, is the planarization of the evaporation source that guarantees to form, and the planeness that the evaporation source substrate is opposite in the one side of powdered mixture is less than or equal to ± 0.5mm; The evaporation source substrate specifically can be selected graphite cake or quartz plate.
Further, step S370, cooling down.
So far, the preparation process of CdTe evaporation source is finished substantially, has also formed the evaporation source of this invention the second embodiment by this preparation process.This evaporation source comprises graphite cake or quartz plate substrate and uses above procedure and is formed at CdTe compound on this substrate.
Figure 4 shows that the XRD figure spectrum by the evaporation source of the prepared formation of preparation method embodiment illustrated in fig. 3.As can be seen from Figure 4, the CdTe characteristic peak is complete, impurity peaks occurs 28 ° and 38 ° of positions, and analyses and comparison can find, the formed CdTe of above embodiment is compound doped a tellurium, also i.e. this CdTe compound polycrystalline cadmium telluride that is rich tellurium.
Above example has mainly illustrated evaporation source preparation method of the present invention and by the formed evaporation source of this preparation method.Although only the some of them embodiments of the present invention are described, but those of ordinary skills should understand, the present invention can be within not departing from its purport and scope implements with many other forms, for example, the temperature-rising method of powdered mixture is not limited to the mode among above two embodiment, and those skilled in the art can also select the heating mode of syllogic as the case may be.Therefore, the example of showing and embodiment are regarded as illustrative and not restrictive, and in situation about not breaking away from such as the defined spirit of the present invention of appended each claim and scope, the present invention may be contained various modifications and replacement.
Claims (21)
1. the preparation method of an evaporation source, described evaporation source is characterized in that for the preparation of the Cadimium telluride thin film of cadmium telluride film solar cells the method may further comprise the steps:
(1) is mixed in proportion the powdered mixture that formation comprises cadmium metal powder and tellurium simple substance powder;
(2) described powdered mixture is tiled on the thermal evaporation sources of thermal evaporation apparatus; And
(3) evaporation to smooth evaporation source substrate forms the cadmium telluride compound under 500 ℃ to 900 ℃ temperature condition.
2. preparation method as claimed in claim 1 is characterized in that, the particle diameter of described cadmium metal powder and tellurium simple substance powder all is less than or equal to 100 orders.
3. preparation method as claimed in claim 1 is characterized in that, in the described step (1), also comprises screening process before mixing or after mixing, so that the particle diameter of described cadmium metal powder and tellurium simple substance powder all is less than or equal to 100 orders.
4. preparation method as claimed in claim 1 or 2 is characterized in that, in the described step (1), is mixed in proportion first cadmium metal and simple substance tellurium, pulverizes described cadmium metal and simple substance tellurium to form described powdered mixture again.
5. preparation method as claimed in claim 4 is characterized in that, the purity of described cadmium metal is more than or equal to 99.99%, and the purity of described simple substance tellurium is more than or equal to 99.99%.
6. such as claim 1 or 3 described preparation methods, it is characterized in that, in the described step (1), crushing metal cadmium and simple substance tellurium are with the described cadmium metal powder of corresponding formation and tellurium simple substance powder, be mixed in proportion described cadmium metal powder and tellurium simple substance powder to form described powdered mixture more respectively.
7. preparation method as claimed in claim 6 is characterized in that, the purity of cadmium metal powder is more than or equal to 99.99%, and the purity of described tellurium simple substance powder is more than or equal to 99.99%.
8. preparation method as claimed in claim 1 is characterized in that, the scope of the stoichiometric ratio of described cadmium metal powder and tellurium simple substance powder is 1:2 to 2:1.
9. preparation method as claimed in claim 1 is characterized in that, the stoichiometric ratio of described cadmium metal powder and tellurium simple substance powder is 1:1.1, the polycrystalline cadmium telluride that described cadmium telluride compound is rich tellurium.
10. preparation method as claimed in claim 1 is characterized in that, the stoichiometric ratio of described cadmium metal powder and tellurium simple substance powder is 1:1, and described cadmium telluride compound is unadulterated polycrystalline cadmium telluride.
11. preparation method as claimed in claim 1 is characterized in that, in the described step (2), the scope of the thickness of the described powdered mixture of tiling is 1 millimeter to 10 millimeters.
12., it is characterized in that in the described step (2), the thickness difference of the described powdered mixture of tiling is within 1 millimeter such as claim 1 or 11 described preparation methods.
13. preparation method as claimed in claim 1 is characterized in that, finishes under vacuum condition or inert gas atmosphere condition in the described step (3).
14. such as claim 1 or 13 described preparation methods, it is characterized in that, in the described step (3), described powdered mixture heats up by two-part and realizes 500 ℃ to 900 ℃ temperature condition, wherein, first paragraph is for being warming up to 350-450 ℃ of temperature range and being incubated 10 to 25 minutes, and second segment is for being warming up to 500 ℃ of-900 ℃ of temperature ranges.
15. preparation method as claimed in claim 1 is characterized in that, in the described step (3), described powdered mixture heats up by one-part form and directly realizes 500 ℃ to 900 ℃ temperature condition.
16. preparation method as claimed in claim 1 is characterized in that, the planeness that described evaporation source substrate is opposite in the one side of described powdered mixture is less than or equal to ± and 0.5 millimeter.
17., it is characterized in that described evaporation source substrate is graphite cake or quartz plate such as claim 1 or 16 described preparation methods.
18. an evaporation source is characterized in that, comprising:
The evaporation source substrate; And
The cadmium telluride compound layer, it is used such as claim 1-15 as described in each described method preparation is formed on the evaporation source substrate.
19. evaporation source as claimed in claim 18 is characterized in that, the planeness that described evaporation source substrate is opposite in the one side of described powdered mixture is less than or equal to ± and 0.5 millimeter.
20. evaporation source as claimed in claim 18 is characterized in that, described evaporation source substrate is graphite cake or quartz plate.
21. evaporation source as claimed in claim 18 is characterized in that, described evaporation source is employed to prepare the Cadimium telluride thin film of cadmium telluride film solar cells in the near space subliming method.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103266317A (en) * | 2013-05-10 | 2013-08-28 | 西交利物浦大学 | Powder coating device for cadmium telluride thin film solar cell |
| CN105839053A (en) * | 2016-04-29 | 2016-08-10 | 燕山大学 | Preparation method of indium monoiodide polycrystalline thin film |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101734630A (en) * | 2009-12-30 | 2010-06-16 | 峨嵋半导体材料研究所 | Method for preparing high-purity cadmium telluride |
-
2011
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101734630A (en) * | 2009-12-30 | 2010-06-16 | 峨嵋半导体材料研究所 | Method for preparing high-purity cadmium telluride |
Non-Patent Citations (2)
| Title |
|---|
| M.C.R.RIBEIRO ET AL.: "Thermodynamic evaluation of the CdTe deposition by an elemental co-evaporation method under isothermal transport conditions", 《MATERIALS RESEARCH BULLETIN》 * |
| 蒋显辉等: "近空间升华法制备大面积CdTe多晶薄膜", 《云南大学学报（自然科学版）》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103266317A (en) * | 2013-05-10 | 2013-08-28 | 西交利物浦大学 | Powder coating device for cadmium telluride thin film solar cell |
| CN103266317B (en) * | 2013-05-10 | 2015-11-25 | 西交利物浦大学 | Cadmium telluride diaphragm solar battery powder coating device |
| CN105839053A (en) * | 2016-04-29 | 2016-08-10 | 燕山大学 | Preparation method of indium monoiodide polycrystalline thin film |
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Application publication date: 20130320 |