CN103205708A - Method for preparing novel conductive indium oxide target and indium oxide film - Google Patents
Method for preparing novel conductive indium oxide target and indium oxide film Download PDFInfo
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- CN103205708A CN103205708A CN2013101446000A CN201310144600A CN103205708A CN 103205708 A CN103205708 A CN 103205708A CN 2013101446000 A CN2013101446000 A CN 2013101446000A CN 201310144600 A CN201310144600 A CN 201310144600A CN 103205708 A CN103205708 A CN 103205708A
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Abstract
The invention discloses a method for preparing a novel conductive indium oxide target and an indium oxide film. A third element is added to an original binary oxide to improve the electric carrier mobility so as to further improve the light transmittance and the electrical conductivity; and the related target is prepared by the combination of casting molding and high-temperature sintering for the first time. Therefore, the uniformity and compactness of the target are improved; an abnormal electric arc in a sputtering process is greatly reduced; the service life of the target is prolonged; the utilization rate of the target is improved; the quality and the performance of the sputtering film are improved; the efficiency of a copper indium gallium selenide (CIGS) solar cell is effectively improved; and the requirements of production are met.
Description
Technical field
The present invention relates to a kind of method for preparing novel conductive Indium sesquioxide target and indium oxide film, belong to the photovoltaic field.
Background technology
Along with advancing by leaps and bounds of social development and science and technology, human urgent day by day to the demand of functional materials.New functional materials has become the key of new technology and infant industry's development.Along with the development of industries such as indicating meter, touchscreen, semi-conductor, sun power, a kind of new functional materials---transparent conductive oxide film (transparent conducting oxide abbreviates the TCO film as) produces thereupon, grows up.So-called transparent conductive film refers to that the transmittance of a thin-film material in visible-range reaches more than 80%, and the electroconductibility height, is lower than 1x10 than resistance value
-3Ω .cm.Metals such as known Au, Ag, Pt, Cu, Rh, Pd, Al, Cr when forming the thick film of 3-15nm, all have light transmission to a certain degree, all once are applied to the transparent film electrode.But these metallic films are too big to the absorption of light, low and the poor stability of hardness, therefore developing into gradually with the metal oxide is transparent conductive film material (Transparent Conduction Oxide, TCO) be main, common light electrical characteristic such as this class film has that the forbidden band is wide, visible range optical transmittance height and resistivity are low show on solar cell, plane, specific function window coating and other photoelectric device field have broad application prospects.The most ripe, the most widely used In that surely belongs to of technology of preparing wherein
2O
3Base (In
2O
3: Sn is called for short ITO) film.But, because In in the ito thin film
2O
3Expensive, thus cause production cost higher; The material of non-oxide indium series such as stannic oxide or zinc oxide also have quite a lot of must research in recent years, but at present in fields such as LCD TV and touch screens, still can't be comparable with the material of Indium sesquioxide series on the cost performance on these new conductive film materials.
For obtain visible range transmissivity height, specific conductivity height, stable performance, tack good, can meet the different high-quality ITO films that require of different purposes, the performance of material is regulated and control and improved to the technology of preparing of having developed multiple ito thin film both at home and abroad.All be devoted to improve film performance though various technology differ from one another, reduce temperature of reaction, improve control accuracy, simplify preparation cost and adapt to scale operation.Mainly contain vacuum evaporation process, chemical vapor deposition (CVD) technology, pulsed laser deposition (PLD) technology at present, reach vacuum splashing and plating technology etc.For the technology that reaches large-area uniformity and production vacuum degree of spattering is first-selected, so the film sputter just becomes extremely important with quality and the performance of Coating Materials (target).Increasing along with electronic package such as LCD TV touch screen thin-film solar cells equidimension, how obtaining high-transmittance more and electrical ito thin film is the task of top priority.
Target is to have the mother metal that solid shape is used for sputter coating.Target is if can be divided into metal and pottery two big classes simply according to materials classification, if can divide into melting processing procedure and powder metallurgy processing procedure two big classes usually generally according to the processing procedure classification.Most of metal targets are adopted melting processing procedure (Al, Sb, Bi, Cd, Ce, Co, Cu, Ge, Au, Hf, In, Ir, Fe, Pb, Mg, Ni, Ni-Cr, Ni-Fe, Ni-V, Nb, Pd, Pt, Se, Si, Ag, Sn, Ti, V, Y, Zn, Zr) obtain, the grain size control when using of minority target, alloy ingredient fusing point gap are too big etc., and factors just adopt powder metallurgy processing procedure (As, B, Cr, Co, Mn, Mo, Ni-Cr, Permalloy, Re, Ru, Te, W, 90W-10Ti).Has only SiO in the ceramic target
2With ThF
4, Na
3AlF
6Adopt the melting processing procedure, great majority are adopted powder metallurgy processing procedure (compacting+sintering, hot pressing, heat are all pressed), comprise oxide compound (Al
2O
3, BaTi O
3, PbTi O
3, Ce O
2, ITO, LiNbO
3, SiO, Ta
2O
5, TiO
2, ZrO
2, Hf O
2, MgO), and carbide (SiC, TiC, TaC, WC), boride (TiB
2, Zr B
2, LaB
6), nitride (Si
3N
4, TaN, TiN), fluorochemical (CaF
2, CeF
3, MgF
2), sulfide (CdS, MoS
2, TaS
2), selenide (CdSe, PbSe, MoSe), telluride (CdTe, MoTe) and silicide (MoSi
2, TaSi
2, TiSi
2, WSi
2); Wherein fluorochemical, sulfide, selenide and telluride in make with use in may toxigenicity must handled; Carbide, boride, its fusing point of nitride is all very high, makes in hot pressing (quite high temperature) mode usually.Be that material mixing lack of homogeneity, and stress distribution inequality in the sintering process are difficult for the large-sized oxide target material of production high-density with hot pressing processing procedure or the cold sintering process again of all pressing at the oxide target material tradition.
The kind of solar cell is numerous, and CIGS (copper-indium-galliun-selenium) thin-film solar cells has high conversion efficiency and development potentiality and is attracted attention, at present the high conversion efficiency of CIGS (copper-indium-galliun-selenium) thin-film solar cells is created by U.S. renewable energy resources laboratory (NREL), and its efficient has reached 20%.CIGS develops so far efficiency of conversion from nineteen ninety-five and has improved and have 7% more than fully, in the same time 4% of CdTe, silicon single crystal and polysilicon respectively be 3% and non-crystalline silicon 1%, be enough to find out the development potentiality of CIGS on efficiency of conversion.CIGS (copper-indium-galliun-selenium) thin-film solar cells development so far its unit construction roughly part formed with substrate (SS/GLASS/PET) by top electrode (AL/Ni), anti-reflecting layer (MgF2), optical window layer (AZO/ITO), buffer layer (CdS), absorption layer (CIGS), back electrode (Mo); In single rete, the parameter allotment that each material composition compares, the film crystal structure, various factorss such as processing procedure mode and optimizing processing procedure are the challenge in its preparation, in addition, need consider that also each rete is stacked into the matching of assembly, numerous factors such as influence each other between each rete preparation method and processing procedure, especially show that from pertinent literature CIGS (copper-indium-galliun-selenium) is for extremely responsive for component influences under the various process parameter, more increase the difficulty of CIGS (copper-indium-galliun-selenium) thin-film solar cells in preparation, simultaneously also make the technology door relatively improve, think a kind of solar cell that technical difficulty is bigger at international photovoltaic circle.
The large-area electroconductibility of nesa coating and transparence are crucial in the development of large-sized touch screen, LCD TV and CIGS thin-film solar cells, and the transparence of TCO and the electrical efficiency of conversion that to a certain degree influences battery.But still there is the lower problem of long wavelength's zone transparence in Indium sesquioxide series nesa coating, and the phenomenon of target generation abnormal arc more seriously is badly in need of improving in the sputter process.
Summary of the invention
The object of the invention provides a kind of method for preparing novel conductive Indium sesquioxide target and indium oxide film, by adding the third oxide compound, improve light transmission and electroconductibility to improve electric carrier movability, and the mode that initiative uses injection forming to increase temperature sintering is made relevant target, improve target homogeneity and density, significantly reduce the generation of abnormal arc in the sputter process, prolong target life and increase utilization ratio, improve sputtering thin film quality and performance, significantly promote the transparence of film the long wavelength, met LCD TV, the production demand of touch screen and CIGS thin film solar.
A kind of method for preparing novel conductive Indium sesquioxide target, the weight of following material is represented with parts by weight: 100 parts of Indium sesquioxides are added mixed metal oxide, add 68 parts zirconia ball, 30 parts pure water and 2 parts dispersion agent again, grinding above material fully, mixing obtains slurry, then slurry is poured in three cun the porousness mould, dry 20-28 hour, demoulding forms idiosome, again through high temperature sintering 5.5-6.5 hour of 1400-1550 degree, form sputter target idiosome, become three cun electric conductive oxidation indium targets with surface grinding through cutting.
Wherein mixed metal oxide can be the stannic oxide of 1-10 part and the titanium oxide of 0.1-3.0 part, and milling time is 7-9 hour; Can be the stannic oxide of 1-10 part and the molybdenum oxide of 0.1-3.0 part, milling time be 22-26 hour; Can be the boron oxide of 1-10 part stannic oxide and 0.1-3.0 part, milling time be 22-26 hour.
Wherein dispersion agent is that massfraction is 0.5-2% polyacrylic acid sodium water solution.
A kind of method for preparing the novel conductive indium oxide film, the above-mentioned electric conductive oxidation indium target that makes is first with the thick Mo film of DC power supply sputter the first layer 500nm, evaporation is made the thick CIGS absorption layer film of second layer 2000nm altogether then, then be coated with the 3rd layer of CdS film that 100nm is thick with immersion method, with vacuum-pumping system sputter cavity background pressure be evacuated to 0.7 * 10 then
-5-0.9 * 10
-5Behind the torr, utilize argon gas to be used as working gas, the operating pressure that will feed argon gas control sputter cavity through throttling valve is 2 * 10
-3Torr is that 250 watts RF power supply carries out sputter process with power, makes the transparent conductive oxide indium film of film thickness 90-110nm.
Characteristics of the present invention are in the process of the novel Indium sesquioxide target of preparation and film, initiative is used the mode of injection forming to make various oxide compounds fully mix to improve the density of target and homogeneity to prolong target work-ing life, and by adding the third oxide compound in Indium sesquioxide, significantly reduce the generation of abnormal arc in the sputter process, improve sputtering thin film quality and performance, improve the chemical stability of Indium sesquioxide material, and improve film in long wavelength's transparence, significantly improve the applicability of indium oxide film in thin-film solar cells such as touch screen and CIGS, satisfied the requirement of producing.
Embodiment:
Embodiment 1:
A kind of method for preparing novel conductive Indium sesquioxide target, the weight of following material is represented with parts by weight: 100 parts of Indium sesquioxides are added mixed metal oxide, add 68 parts zirconia ball, 30 parts pure water and 2 parts dispersion agent again, grinding above material fully, mixing obtains slurry, then slurry is poured in three cun the porousness mould, dry 20 hours, demoulding forms idiosome, again through the high temperature sinterings 5.5 hours of 1400 degree, form sputter target idiosome, become three cun electric conductive oxidation indium targets with surface grinding through cutting.
Wherein mixed metal oxide is 1 part stannic oxide and 0.1 part titanium oxide, and milling time is 7 hours.
Wherein dispersion agent is that massfraction is 0.5% polyacrylic acid sodium water solution.
A kind of method for preparing the novel conductive indium oxide film, the above-mentioned electric conductive oxidation indium target that makes is first with the thick Mo film of DC power supply sputter the first layer 500nm, evaporation is made the thick CIGS absorption layer film of second layer 2000nm altogether then, then be coated with the 3rd layer of CdS film that 100nm is thick with immersion method, with vacuum-pumping system sputter cavity background pressure be evacuated to 0.7 * 10 then
-5Behind the torr, utilize argon gas to be used as working gas, the operating pressure that will feed argon gas control sputter cavity through throttling valve is 2 * 10
-3Torr is that 250 watts RF power supply carries out sputter process with power, makes the transparent conductive oxide indium film of film thickness 90nm.
Embodiment 2:
A kind of method for preparing novel conductive Indium sesquioxide target, the weight of following material is represented with parts by weight: 100 parts of Indium sesquioxides are added mixed metal oxide, add 68 parts zirconia ball, 30 parts pure water and 2 parts dispersion agent again, grinding above material fully, mixing obtains slurry, then slurry is poured in three cun the porousness mould, dry 24 hours, demoulding forms idiosome, again through the high temperature sinterings 6.0 hours of 1480 degree, form sputter target idiosome, become three cun electric conductive oxidation indium targets with surface grinding through cutting.
Wherein mixed metal oxide is 5 parts stannic oxide and 1.5 parts titanium oxide, and milling time is 8 hours.
Wherein dispersion agent is that massfraction is 1.2% polyacrylic acid sodium water solution.
A kind of method for preparing the novel conductive indium oxide film, the above-mentioned electric conductive oxidation indium target that makes is first with the thick Mo film of DC power supply sputter the first layer 500nm, evaporation is made the thick CIGS absorption layer film of second layer 2000nm altogether then, then be coated with the 3rd layer of CdS film that 100nm is thick with immersion method, with vacuum-pumping system sputter cavity background pressure be evacuated to 0.8 * 10 then
-5Behind the torr, utilize argon gas to be used as working gas, the operating pressure that will feed argon gas control sputter cavity through throttling valve is 2 * 10
-3Torr is that 250 watts RF power supply carries out sputter process with power, makes the transparent conductive oxide indium film of film thickness 100nm.
Embodiment 3:
A kind of method for preparing novel conductive Indium sesquioxide target, the weight of following material is represented with parts by weight: 100 parts of Indium sesquioxides are added mixed metal oxide, add 68 parts zirconia ball, 30 parts pure water and 2 parts dispersion agent again, grinding above material fully, mixing obtains slurry, then slurry is poured in three cun the porousness mould, dry 28 hours, demoulding forms idiosome, again through the high temperature sinterings 6.5 hours of 1550 degree, form sputter target idiosome, become three cun electric conductive oxidation indium targets with surface grinding through cutting.
Wherein mixed metal oxide is 10 parts stannic oxide and 3.0 parts titanium oxide, and milling time is 9 hours.
Wherein dispersion agent is that massfraction is 2% polyacrylic acid sodium water solution.
A kind of method for preparing the novel conductive indium oxide film, the above-mentioned electric conductive oxidation indium target that makes is first with the thick Mo film of DC power supply sputter the first layer 500nm, evaporation is made the thick CIGS absorption layer film of second layer 2000nm altogether then, then be coated with the 3rd layer of CdS film that 100nm is thick with immersion method, with vacuum-pumping system sputter cavity background pressure be evacuated to 0.9 * 10 then
-5Behind the torr, utilize argon gas to be used as working gas, the operating pressure that will feed argon gas control sputter cavity through throttling valve is 2 * 10
-3Torr is that 250 watts RF power supply carries out sputter process with power, makes the transparent conductive oxide indium film of film thickness 110nm.
Embodiment 4:
A kind of method for preparing novel conductive Indium sesquioxide target, wherein mixed metal oxide is 1 part stannic oxide and 0.1 part molybdenum oxide, milling time is 22 hours.
All the other are with embodiment 1.
Embodiment 5:
A kind of method for preparing novel conductive Indium sesquioxide target, wherein mixed metal oxide is 5 parts stannic oxide and 1.5 parts molybdenum oxide, milling time is 24 hours.
All the other are with embodiment 2.
Embodiment 6:
A kind of method for preparing novel conductive Indium sesquioxide target, wherein mixed metal oxide is 10 parts stannic oxide and 3.0 parts molybdenum oxide, milling time is 26 hours.
All the other are with embodiment 3.
Embodiment 7:
A kind of method for preparing novel conductive Indium sesquioxide target, wherein mixed metal oxide is the boron oxide of 1 part of stannic oxide and 0.1 part, milling time is 22 hours.
All the other are with embodiment 1.
Embodiment 8:
A kind of method for preparing novel conductive Indium sesquioxide target, wherein mixed metal oxide is the boron oxide of 5 parts of stannic oxide and 1.5 parts, milling time is 24 hours.
All the other are with embodiment 2.
Embodiment 9:
A kind of method for preparing novel conductive Indium sesquioxide target, wherein mixed metal oxide is the boron oxide of 10 parts of stannic oxide and 3.0 parts, milling time is 26 hours.
All the other are with embodiment 3.
Embodiment 10:
A kind of method for preparing novel conductive Indium sesquioxide target, the weight of following material is represented with parts by weight: 100 parts of Indium sesquioxides are added mixed metal oxide, add 68 parts zirconia ball, 30 parts pure water and 2 parts dispersion agent again, grinding above material fully, mixing obtains slurry, then slurry is poured in three cun the porousness mould, dry 18 hours, demoulding forms idiosome, again through the high temperature sinterings 5 hours of 1580 degree, form sputter target idiosome, become three cun electric conductive oxidation indium targets with surface grinding through cutting.
Wherein mixed metal oxide is 0.8 part stannic oxide and 3.5 parts titanium oxide, and milling time is 6 hours.
Wherein dispersion agent is that massfraction is 0.4% polyacrylic acid sodium water solution.
A kind of method for preparing the novel conductive indium oxide film, the above-mentioned electric conductive oxidation indium target that makes is first with the thick Mo film of DC power supply sputter the first layer 500nm, evaporation is made the thick CIGS absorption layer film of second layer 2000nm altogether then, then be coated with the 3rd layer of CdS film that 100nm is thick with immersion method, with vacuum-pumping system sputter cavity background pressure be evacuated to 0.6 * 10 then
-5Behind the torr, utilize argon gas to be used as working gas, the operating pressure that will feed argon gas control sputter cavity through throttling valve is 2 * 10
-3Torr is that 250 watts RF power supply carries out sputter process with power, makes the transparent conductive oxide indium film of film thickness 90nm.
Embodiment 11:
A kind of method for preparing novel conductive Indium sesquioxide target, the weight of following material is represented with parts by weight: 100 parts of Indium sesquioxides are added mixed metal oxide, add 68 parts zirconia ball, 30 parts pure water and 2 parts dispersion agent again, grinding above material fully, mixing obtains slurry, then slurry is poured in three cun the porousness mould, dry 30 hours, demoulding forms idiosome, again through the high temperature sinterings 7 hours of 1350 degree, form sputter target idiosome, become three cun electric conductive oxidation indium targets with surface grinding through cutting.
Wherein mixed metal oxide is 11 parts stannic oxide and 0.1 part molybdenum oxide, and milling time is 20 hours.
Wherein dispersion agent is that massfraction is 2.3% polyacrylic acid sodium water solution.
A kind of method for preparing the novel conductive indium oxide film, the above-mentioned electric conductive oxidation indium target that makes is first with the thick Mo film of DC power supply sputter the first layer 500nm, evaporation is made the thick CIGS absorption layer film of second layer 2000nm altogether then, then be coated with the 3rd layer of CdS film that 100nm is thick with immersion method, with vacuum-pumping system sputter cavity background pressure be evacuated to 1.0 * 10 then
-5Behind the torr, utilize argon gas to be used as working gas, the operating pressure that will feed argon gas control sputter cavity through throttling valve is 2 * 10
-3Torr is that 250 watts RF power supply carries out sputter process with power, makes the transparent conductive oxide indium film of film thickness 100nm.
Embodiment 12:
A kind of method for preparing novel conductive Indium sesquioxide target, the weight of following material is represented with parts by weight: 100 parts of Indium sesquioxides are added mixed metal oxide, add 68 parts zirconia ball, 30 parts pure water and 2 parts dispersion agent again, grinding above material fully, mixing obtains slurry, then slurry is poured in three cun the porousness mould, dry 19 hours, demoulding forms idiosome, again through the high temperature sinterings 5 hours of 1600 degree, form sputter target idiosome, become three cun electric conductive oxidation indium targets with surface grinding through cutting.
Wherein mixed metal oxide is the boron oxide of 0.8 part of stannic oxide and 3.2 parts, and milling time is 28 hours.
Wherein dispersion agent is that massfraction is 1.0% polyacrylic acid sodium water solution.
A kind of method for preparing the novel conductive indium oxide film, the above-mentioned electric conductive oxidation indium target that makes is first with the thick Mo film of DC power supply sputter the first layer 500nm, evaporation is made the thick CIGS absorption layer film of second layer 2000nm altogether then, then be coated with the 3rd layer of CdS film that 100nm is thick with immersion method, with vacuum-pumping system sputter cavity background pressure be evacuated to 0.65 * 10 then
-5Behind the torr, utilize argon gas to be used as working gas, the operating pressure that will feed argon gas control sputter cavity through throttling valve is 2 * 10
-3Torr is that 250 watts RF power supply carries out sputter process with power, makes the transparent conductive oxide indium film of film thickness 110nm.
Comparative Examples 1:
The method for preparing electric conductive oxidation indium target in the prior art with adding stannic oxide 10wt% in the Indium sesquioxide, uses the mode of cold isostactic pressing and high temperature sintering to make base substrate, is processed into 3 cun target then.Then the required glass baseplate that plating is put into the sputter cavity, utilize sputter to reach the mode of evaporation altogether, finish the thick Mo film of 500nm, the CIGS film of 2000nm, the film of the buffer layer CdS of immersion method 100nm reaches, then the required glass baseplate that plating is put into the sputter cavity, with vacuum-pumping system sputter cavity background pressure is evacuated to 0.7 * 10
-5-0.9 * 10
-5Behind the torr, utilize argon gas to be used as working gas, the operating pressure that will feed argon gas control sputter cavity through throttling valve is 2 * 10
-3Torr carries out sputter process for 250 watts with the RF power, makes the transparent conductive oxide indium film about film thickness 100nm, namely finishes the film of the primary structure of CIGS solar cell and makes, and carries out the efficiency of conversion test then.
The performance of the transparent conductive oxide Indium film that embodiment 1-12 and Comparative Examples 1 make is as shown in the table:
From last table result as can be seen, in the novel conductive Indium sesquioxide target that employing preparation technology's of the present invention embodiment 1-9 obtains and the performance of indium oxide film, efficiency of conversion, resistance, transmittance, target density obviously is better than the Comparative Examples 1 of preparation electric conductive oxidation indium target in embodiment 10-12 outside processing range and the prior art, as seen the mode of injection forming of the present invention and the technology of adding the third oxide compound, improve the chemical stability of Indium sesquioxide material, and improve film in long wavelength's transparence, significantly improved the applicability of indium oxide film in thin-film solar cells such as touch screen and CIGS, satisfied the requirement of producing and reduced production costs, met the needs of production.
Claims (8)
1. method for preparing novel conductive Indium sesquioxide target and indium oxide film, it is characterized in that: the weight of following material is represented with parts by weight: 100 parts of Indium sesquioxides are added mixed metal oxide, add 68 parts zirconia ball again, the dispersion agent of 30 parts pure water and 2 parts, grinding above material fully, mixing obtains slurry, then slurry is poured in three cun the porousness mould, dry 20-28 hour, demoulding forms idiosome, again through high temperature sintering 5.5-6.5 hour of 1400-1550 degree, form sputter target idiosome, become three cun electric conductive oxidation indium targets with surface grinding through cutting;
The above-mentioned electric conductive oxidation indium target that makes is first with the thick Mo film of DC power supply sputter the first layer 500nm, evaporation is made the thick CIGS absorption layer film of second layer 2000nm altogether then, then be coated with the 3rd layer of CdS film that 100nm is thick with immersion method, with vacuum-pumping system sputter cavity background pressure be evacuated to 0.7 * 10 then
-5-0.9 * 10
-5Behind the torr, utilize argon gas to be used as working gas, the operating pressure that will feed argon gas control sputter cavity through throttling valve is 2 * 10
-3Torr is that 250 watts RF power supply carries out sputter process with power, makes the transparent conductive oxide indium film of film thickness 90-110nm.
2. a kind of method for preparing novel conductive Indium sesquioxide target and indium oxide film as claimed in claim 1, it is characterized in that: the weight of following material is represented with parts by weight: mixed metal oxide is the stannic oxide of 1-10 part and the titanium oxide of 0.1-3.0 part, and milling time is 7-9 hour; Or the molybdenum oxide of the stannic oxide of 1-10 part and 0.1-3.0 part, milling time is 22-26 hour; Or the boron oxide of 1-10 part stannic oxide and 0.1-3.0 part, milling time is 22-26 hour.
3. a kind of method for preparing novel conductive Indium sesquioxide target and indium oxide film as claimed in claim 1, it is characterized in that: wherein dispersion agent is that massfraction is 0.5-2% polyacrylic acid sodium water solution.
4. a kind of method for preparing novel conductive Indium sesquioxide target and indium oxide film as claimed in claim 1, it is characterized in that: the weight of following material is represented with parts by weight: 100 parts of Indium sesquioxides are added mixed metal oxide, add 68 parts zirconia ball again, the dispersion agent of 30 parts pure water and 2 parts, grinding above material fully, mixing obtains slurry, then slurry is poured in three cun the porousness mould, dry 24 hours, demoulding forms idiosome, again through the high temperature sinterings 6.0 hours of 1480 degree, form sputter target idiosome, become three cun electric conductive oxidation indium targets with surface grinding through cutting;
The above-mentioned electric conductive oxidation indium target that makes is first with the thick Mo film of DC power supply sputter the first layer 500nm, evaporation is made the thick CIGS absorption layer film of second layer 2000nm altogether then, then be coated with the 3rd layer of CdS film that 100nm is thick with immersion method, with vacuum-pumping system sputter cavity background pressure be evacuated to 0.8 * 10 then
-5Behind the torr, utilize argon gas to be used as working gas, the operating pressure that will feed argon gas control sputter cavity through throttling valve is 2 * 10
-3Torr is that 250 watts RF power supply carries out sputter process with power, makes the transparent conductive oxide indium film of film thickness 100nm.
5. a kind of method for preparing novel conductive Indium sesquioxide target and indium oxide film as claimed in claim 4, it is characterized in that: mixed metal oxide is 5 parts stannic oxide and 1.5 parts titanium oxide, and milling time is 8 hours.
6. a kind of method for preparing novel conductive Indium sesquioxide target and indium oxide film as claimed in claim 4, it is characterized in that: mixed metal oxide is 5 parts stannic oxide and 1.5 parts molybdenum oxide, and milling time is 24 hours.
7. a kind of method for preparing novel conductive Indium sesquioxide target and indium oxide film as claimed in claim 4 is characterized in that: mixed metal oxide is the boron oxide of 5 parts of stannic oxide and 1.5 parts, and milling time is 24 hours.
8. a kind of method for preparing novel conductive Indium sesquioxide target and indium oxide film as claimed in claim 4, it is characterized in that: wherein dispersion agent is that massfraction is 1.2% polyacrylic acid sodium water solution.
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| CN103510047A (en) * | 2013-10-21 | 2014-01-15 | 研创应用材料（赣州）有限公司 | Method for preparing novel conductive indium tin oxide material and film thereof |
| CN103556120A (en) * | 2013-10-21 | 2014-02-05 | 研创应用材料（赣州）有限公司 | Method for preparing novel copper alloy material layer and film |
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| CN108914065A (en) * | 2018-08-01 | 2018-11-30 | 研创应用材料（赣州）股份有限公司 | A kind of novel RPD polynary conductive oxide material and preparation method thereof |
| CN108914065B (en) * | 2018-08-01 | 2020-11-13 | 研创应用材料（赣州）股份有限公司 | Multi-element conductive oxide material for RPD and preparation method thereof |
| CN109136863A (en) * | 2018-08-16 | 2019-01-04 | 研创应用材料（赣州）股份有限公司 | A kind of preparation method of the polynary conductive oxide film of the RPD of high-weatherability |
| CN112301317A (en) * | 2020-10-30 | 2021-02-02 | 连云港恒顺工业科技有限公司 | Surface treatment process for claw type vacuum pump rotor |
| CN112301317B (en) * | 2020-10-30 | 2021-05-18 | 连云港恒顺工业科技有限公司 | Surface treatment process for claw type vacuum pump rotor |
| CN116835965A (en) * | 2023-06-21 | 2023-10-03 | 芜湖映日科技股份有限公司 | High-resistance target material with low bulk resistivity and preparation method thereof |
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