CN103205708B - Method for preparing novel conductive indium oxide target and indium oxide film - Google Patents
Method for preparing novel conductive indium oxide target and indium oxide film Download PDFInfo
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- CN103205708B CN103205708B CN201310144600.0A CN201310144600A CN103205708B CN 103205708 B CN103205708 B CN 103205708B CN 201310144600 A CN201310144600 A CN 201310144600A CN 103205708 B CN103205708 B CN 103205708B
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Abstract
The invention discloses a method for preparing a novel conductive indium oxide target and an indium oxide film. A third element is added to an original binary oxide to improve the electric carrier mobility so as to further improve the light transmittance and the electrical conductivity; and the related target is prepared by the combination of casting molding and high-temperature sintering for the first time. Therefore, the uniformity and compactness of the target are improved; an abnormal electric arc in a sputtering process is greatly reduced; the service life of the target is prolonged; the utilization rate of the target is improved; the quality and the performance of the sputtering film are improved; the efficiency of a copper indium gallium selenide (CIGS) solar cell is effectively improved; and the requirements of production are met.
Description
Technical field
The present invention relates to a kind of method preparing novel conductive Indium sesquioxide target and indium oxide film, belong to photovoltaic field.
Background technology
Along with social development and scientific and technical advancing by leaps and bounds, the mankind are day by day urgent to the demand of functional materials.New functional materials has become the key of new technology and infant industry's development.Along with the development of the industries such as indicating meter, touchscreen, semi-conductor, sun power, a kind of new functional materials---transparent conductive oxide film (transparent conducting oxide, referred to as TCO thin film) thereupon Emergence and Development gets up.So-called transparent conductive film refers to that the transmittance of a thin-film material in visible-range reaches more than 80%, and electroconductibility is high, and ratio resistance value is lower than 1x10
-3Ω .cm.The metals such as known Au, Ag, Pt, Cu, Rh, Pd, Al, Cr, when the film that formation 3-15nm is thick, all have light transmission to a certain degree, were all once applied to transparent membrane electrode.But these metallic films are too large to the absorption of light, low and the poor stability of hardness, therefore gradually developing into metal oxide is transparent conductive film material (Transparent Conduction Oxide, TCO) be main, this kind of film has that forbidden band is wide, visible range optical transmittance is high and the common light electrical characteristic such as resistivity is low, has broad application prospects at solar cell, plane display, specific function window coating and other field of photoelectric devices.Wherein technology of preparing is the most ripe, most widely used surely belongs to In
2o
3base (In
2o
3: Sn is called for short ITO) film.But, due to In in ito thin film
2o
3expensive, thus cause production cost higher; The material of non-oxide indium series, as stannic oxide or zinc oxide, also has quite a lot of must research in recent years, but at present in the field such as LCD TV and touch screen, the material that cost performance there is no these new conductive film materials method and Indium sesquioxide series is comparable.
In order to obtain, visible range transmissivity is high, specific conductivity is high, stable performance, tack are good, can meet the high-quality ito film that different purposes difference requires, the technology of preparing having developed multiple ito thin film both at home and abroad regulates and controls and improves the performance of material.Although various technology differs from one another but is all devoted to improve film performance, reduction temperature of reaction, the control accuracy that improves, simplification preparation cost and adapts to scale operation.Mainly contain vacuum evaporation process, chemical vapour deposition (CVD) technique, pulsed laser deposition (PLD) technique and vacuum splashing and plating technique etc. at present.For the technique reaching large-area uniformity and production vacuum degree of spattering is first-selected, therefore the quality of film sputter Coating Materials (target) and performance just become extremely important.Along with electronic package is as increasing in LCD TV touch screen film solar cell equidimension, how to obtain more that high-transmittance and electrical ito thin film are the task of top priority.
Target has the mother metal of solid shape for sputter coating.If target can be divided into metal and pottery two large classes simply according to materials classification, if melting processing procedure and the large class of powder metallurgy processing procedure two usually generally can be divided into according to processing procedure classification.Most metals target adopts melting processing procedure (Al, Sb, Bi, Cd, Ce, Co, Cu, Ge, Au, Hf, In, Ir, Fe, Pb, Mg, Ni, Ni-Cr, Ni-Fe, Ni-V, Nb, Pd, Pt, Se, Si, Ag, Sn, Ti, V, Y, Zn, Zr) obtain, minority target just adopts powder metallurgy processing procedure (As, B, Cr, Co, Mn, Mo in view of the factors such as grain size controls, alloy ingredient fusing point gap is too large during use, Ni-Cr, Permalloy, Re, Ru, Te, W, 90W-10Ti).SiO is only had in ceramic target
2with ThF
4, Na
3alF
6adopt melting processing procedure, great majority adopt powder metallurgy processing procedure (compacting+sintering, hot pressing, heat are all pressed), comprise oxide compound (Al
2o
3, BaTi O
3, PbTi O
3, Ce O
2, ITO, LiNbO
3, SiO, Ta
2o
5, TiO
2, ZrO
2, Hf O
2, MgO), carbide (SiC, TiC, TaC, WC), boride (TiB
2, Zr B
2, LaB
6), nitride (Si
3n
4, TaN, TiN), fluorochemical (CaF
2, CeF
3, MgF
2), sulfide (CdS, MoS
2, TaS
2), selenide (CdSe, PbSe, MoSe), telluride (CdTe, MoTe) and silicide (MoSi
2, TaSi
2, TiSi
2, WSi
2); Wherein fluorochemical, sulfide, selenide and telluride are in making and may produce in use the necessary handled of toxicity; Carbide, boride, its fusing point of nitride is all very high, usually makes in hot pressing (suitable high temperature) mode.Be with hot pressing processing procedure for oxide target material tradition or coldly all press sintering process again, material mixing lack of homogeneity, and in sintering process, stress distribution is uneven, the large-sized oxide target material of not easily production high-density.
The huge number of solar cell, and CIGS (copper-indium-galliun-selenium) thin-film solar cells has high conversion efficiency and development potentiality and is attracted attention, the most high conversion efficiency of current CIGS (copper-indium-galliun-selenium) thin-film solar cells created by U.S.'s Renewable Energy Laboratory (NREL), and its efficiency reaches 20%.CIGS is developed so far efficiency of conversion from nineteen ninety-five and has improved and have 7% more than fully, within the same time CdTe 4%, silicon single crystal and polysilicon be respectively 1% of 3% and non-crystalline silicon, be enough to find out the development potentiality of CIGS in efficiency of conversion.CIGS (copper-indium-galliun-selenium) thin-film solar cells be developed so far its unit construction roughly part be made up of top electrode (AL/Ni), anti-reflecting layer (MgF2), optical window layer (AZO/ITO), buffer layer (CdS), absorption layer (CIGS), back electrode (Mo) and substrate (SS/GLASS/PET), in single rete, the parameter allotment of each material composition ratio, film crystal structure, the various factorss such as processing procedure mode and optimizing processing procedure are the challenge on it is prepared, in addition, also need to consider that each rete is stacked into the matching of assembly, the many factors such as to influence each other between each Film preparation mode and processing procedure, especially CIGS (copper-indium-galliun-selenium) is shown for extremely responsive for component influences various process parameter from pertinent literature, more increase the difficulty of CIGS (copper-indium-galliun-selenium) thin-film solar cells in preparation, also make technology door relatively improve simultaneously, a kind of solar cell that technical difficulty is larger is thought at international photovoltaic circle.
In the development of large-sized touch screen, LCD TV and CIGS thin film solar cell, the large-area electroconductibility of nesa coating and transparence are crucial, and the transparence of TCO and electrically to a certain degree affect the efficiency of conversion of battery.But still there is the lower problem of long wavelength region transparence in Indium sesquioxide series nesa coating, and in sputter process, the phenomenon of target generation abnormal arc is more seriously badly in need of improving.
Prepare the method for electric conductive oxidation indium target in prior art, stannic oxide 10wt% will be added in Indium sesquioxide, use the mode of cold isostactic pressing and high temperature sintering to make base substrate, be then processed into the target of 3 cun.Then the required glass baseplate that plates is put into sputter cavity, utilize the mode of sputter and common evaporation, complete the Mo film that 500nm is thick, the CIGS thin film of 2000nm, the film of the buffer layer CdS of immersion method 100nm and, then the required glass baseplate that plates is put into sputter cavity, with vacuum-pumping system, sputter cavity background pressure is evacuated to 0.7 × 10
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, carries out sputter process with RF power 250 watts, the transparent conductive oxide indium film of obtained film thickness about 100nm, and the film namely completing the primary structure of CIGS solar cell makes, and then carries out efficiency of conversion test.
Summary of the invention
The object of the invention is to provide a kind of method preparing novel conductive Indium sesquioxide target and indium oxide film, by the third oxide compound of interpolation, to improve electric carrier mobility to improve light transmission and electroconductibility, and the pioneering injection forming that uses increases temperature the mode of sintering to make relevant target, improve target homogeneity and density, significantly reduce the generation of abnormal arc in sputter process, extend target life and increase utilization ratio, improve sputtering thin film quality and performance, significantly improve the transparence of film long wavelength, meet LCD TV, the Production requirement of touch screen and CIGS thin film sun power.
A kind of method preparing novel conductive Indium sesquioxide target, the weight of following material represents with parts by weight: 100 parts of Indium sesquioxides are added mixed metal oxide, add the zirconia ball of 68 parts, the pure water of 30 parts and the dispersion agent of 2 parts again, above material grinding is fully mixed to get slurry, then slurry is poured in the porousness mould of three cun, dry 20-28 hour, demoulding forms idiosome, again through the high temperature sintering 5.5-6.5 hour of 1400-1550 degree, form sputter target idiosome, become three cun of electric conductive oxidation indium targets through cutting with surface grinding.
Wherein mixed metal oxide can be the stannic oxide of 1-10 part and the titanium oxide of 0.1-3.0 part, and milling time is 7-9 hour; Can be the stannic oxide of 1-10 part and the molybdenum oxide of 0.1-3.0 part, milling time be 22-26 hour; Can be the boron oxide of 1-10 part stannic oxide and 0.1-3.0 part, milling time be 22-26 hour.
Wherein dispersion agent is massfraction is 0.5-2% aqueous sodium polyacrylate.
A kind of method preparing novel conductive indium oxide film, by above-mentioned obtained electric conductive oxidation indium target first with the Mo film that DC power supply sputter the first layer 500nm is thick, then evaporation manufactures the thick CIGS absorption layer film of second layer 2000nm altogether, then be coated with the thick CdS film of third layer 100nm with immersion method, then with vacuum-pumping system, sputter cavity background pressure be evacuated to 0.7 × 10
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, carries out sputter process with the RF power supply that power is 250 watts, the transparent conductive oxide indium film of obtained film thickness 90-110nm.
Feature of the present invention is in the process preparing novel oxidized indium target and film, the pioneering mode of injection forming that uses makes various oxide compound fully mix to improve the density of target and homogeneity to extend target work-ing life, and by the third oxide compound of interpolation in Indium sesquioxide, significantly reduce the generation of abnormal arc in sputter process, improve sputtering thin film quality and performance, improve the chemical stability of Indium sesquioxide material, and improve the transparence of film long wavelength, significantly improve the applicability of indium oxide film in the thin-film solar cells such as touch screen and CIGS, meet the requirement of production.
embodiment:
Embodiment 1:
A kind of method preparing novel conductive Indium sesquioxide target, the weight of following material represents with parts by weight: 100 parts of Indium sesquioxides are added mixed metal oxide, add the zirconia ball of 68 parts, the pure water of 30 parts and the dispersion agent of 2 parts again, above material grinding is fully mixed to get slurry, then slurry is poured in the porousness mould of three cun, dry 20 hours, demoulding forms idiosome, again through the high temperature sintering 5.5 hours of 1400 degree, form sputter target idiosome, become three cun of electric conductive oxidation indium targets through cutting with surface grinding.
Wherein mixed metal oxide is the stannic oxide of 1 part and the titanium oxide of 0.1 part, and milling time is 7 hours.
Wherein dispersion agent is massfraction is 0.5% aqueous sodium polyacrylate.
A kind of method preparing novel conductive indium oxide film, by above-mentioned obtained electric conductive oxidation indium target first with the Mo film that DC power supply sputter the first layer 500nm is thick, then evaporation manufactures the thick CIGS absorption layer film of second layer 2000nm altogether, then be coated with the thick CdS film of third layer 100nm with immersion method, then with vacuum-pumping system, sputter cavity background pressure be evacuated to 0.7 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, carries out sputter process with the RF power supply that power is 250 watts, the transparent conductive oxide indium film of obtained film thickness 90nm.
Embodiment 2:
A kind of method preparing novel conductive Indium sesquioxide target, the weight of following material represents with parts by weight: 100 parts of Indium sesquioxides are added mixed metal oxide, add the zirconia ball of 68 parts, the pure water of 30 parts and the dispersion agent of 2 parts again, above material grinding is fully mixed to get slurry, then slurry is poured in the porousness mould of three cun, dry 24 hours, demoulding forms idiosome, again through the high temperature sintering 6.0 hours of 1480 degree, form sputter target idiosome, become three cun of electric conductive oxidation indium targets through cutting with surface grinding.
Wherein mixed metal oxide is the stannic oxide of 5 parts and the titanium oxide of 1.5 parts, and milling time is 8 hours.
Wherein dispersion agent is massfraction is 1.2% aqueous sodium polyacrylate.
A kind of method preparing novel conductive indium oxide film, by above-mentioned obtained electric conductive oxidation indium target first with the Mo film that DC power supply sputter the first layer 500nm is thick, then evaporation manufactures the thick CIGS absorption layer film of second layer 2000nm altogether, then be coated with the thick CdS film of third layer 100nm with immersion method, then with vacuum-pumping system, sputter cavity background pressure be evacuated to 0.8 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, carries out sputter process with the RF power supply that power is 250 watts, the transparent conductive oxide indium film of obtained film thickness 100nm.
Embodiment 3:
A kind of method preparing novel conductive Indium sesquioxide target, the weight of following material represents with parts by weight: 100 parts of Indium sesquioxides are added mixed metal oxide, add the zirconia ball of 68 parts, the pure water of 30 parts and the dispersion agent of 2 parts again, above material grinding is fully mixed to get slurry, then slurry is poured in the porousness mould of three cun, dry 28 hours, demoulding forms idiosome, again through the high temperature sintering 6.5 hours of 1550 degree, form sputter target idiosome, become three cun of electric conductive oxidation indium targets through cutting with surface grinding.
Wherein mixed metal oxide is the stannic oxide of 10 parts and the titanium oxide of 3.0 parts, and milling time is 9 hours.
Wherein dispersion agent is massfraction is 2% aqueous sodium polyacrylate.
A kind of method preparing novel conductive indium oxide film, by above-mentioned obtained electric conductive oxidation indium target first with the Mo film that DC power supply sputter the first layer 500nm is thick, then evaporation manufactures the thick CIGS absorption layer film of second layer 2000nm altogether, then be coated with the thick CdS film of third layer 100nm with immersion method, then with vacuum-pumping system, sputter cavity background pressure be evacuated to 0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, carries out sputter process with the RF power supply that power is 250 watts, the transparent conductive oxide indium film of obtained film thickness 110nm.
Embodiment 4:
Prepare a method for novel conductive Indium sesquioxide target, wherein mixed metal oxide is the stannic oxide of 1 part and the molybdenum oxide of 0.1 part, and milling time is 22 hours.
All the other are with embodiment 1.
Embodiment 5:
Prepare a method for novel conductive Indium sesquioxide target, wherein mixed metal oxide is the stannic oxide of 5 parts and the molybdenum oxide of 1.5 parts, and milling time is 24 hours.
All the other are with embodiment 2.
Embodiment 6:
Prepare a method for novel conductive Indium sesquioxide target, wherein mixed metal oxide is the stannic oxide of 10 parts and the molybdenum oxide of 3.0 parts, and milling time is 26 hours.
All the other are with embodiment 3.
Embodiment 7:
Prepare a method for novel conductive Indium sesquioxide target, wherein mixed metal oxide is the boron oxide of 1 part of stannic oxide and 0.1 part, and milling time is 22 hours.
All the other are with embodiment 1.
Embodiment 8:
Prepare a method for novel conductive Indium sesquioxide target, wherein mixed metal oxide is the boron oxide of 5 parts of stannic oxide and 1.5 parts, and milling time is 24 hours.
All the other are with embodiment 2.
Embodiment 9:
Prepare a method for novel conductive Indium sesquioxide target, wherein mixed metal oxide is the boron oxide of 10 parts of stannic oxide and 3.0 parts, and milling time is 26 hours.
All the other are with embodiment 3.
Embodiment 10:
A kind of method preparing novel conductive Indium sesquioxide target, the weight of following material represents with parts by weight: 100 parts of Indium sesquioxides are added mixed metal oxide, add the zirconia ball of 68 parts, the pure water of 30 parts and the dispersion agent of 2 parts again, above material grinding is fully mixed to get slurry, then slurry is poured in the porousness mould of three cun, dry 18 hours, demoulding forms idiosome, again through the high temperature sintering 5 hours of 1580 degree, form sputter target idiosome, become three cun of electric conductive oxidation indium targets through cutting with surface grinding.
Wherein mixed metal oxide is the stannic oxide of 0.8 part and the titanium oxide of 3.5 parts, and milling time is 6 hours.
Wherein dispersion agent is massfraction is 0.4% aqueous sodium polyacrylate.
A kind of method preparing novel conductive indium oxide film, by above-mentioned obtained electric conductive oxidation indium target first with the Mo film that DC power supply sputter the first layer 500nm is thick, then evaporation manufactures the thick CIGS absorption layer film of second layer 2000nm altogether, then be coated with the thick CdS film of third layer 100nm with immersion method, then with vacuum-pumping system, sputter cavity background pressure be evacuated to 0.6 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, carries out sputter process with the RF power supply that power is 250 watts, the transparent conductive oxide indium film of obtained film thickness 90nm.
Embodiment 11:
A kind of method preparing novel conductive Indium sesquioxide target, the weight of following material represents with parts by weight: 100 parts of Indium sesquioxides are added mixed metal oxide, add the zirconia ball of 68 parts, the pure water of 30 parts and the dispersion agent of 2 parts again, above material grinding is fully mixed to get slurry, then slurry is poured in the porousness mould of three cun, dry 30 hours, demoulding forms idiosome, again through the high temperature sintering 7 hours of 1350 degree, form sputter target idiosome, become three cun of electric conductive oxidation indium targets through cutting with surface grinding.
Wherein mixed metal oxide is the stannic oxide of 11 parts and the molybdenum oxide of 0.1 part, and milling time is 20 hours.
Wherein dispersion agent is massfraction is 2.3% aqueous sodium polyacrylate.
A kind of method preparing novel conductive indium oxide film, by above-mentioned obtained electric conductive oxidation indium target first with the Mo film that DC power supply sputter the first layer 500nm is thick, then evaporation manufactures the thick CIGS absorption layer film of second layer 2000nm altogether, then be coated with the thick CdS film of third layer 100nm with immersion method, then with vacuum-pumping system, sputter cavity background pressure be evacuated to 1.0 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, carries out sputter process with the RF power supply that power is 250 watts, the transparent conductive oxide indium film of obtained film thickness 100nm.
Embodiment 12:
A kind of method preparing novel conductive Indium sesquioxide target, the weight of following material represents with parts by weight: 100 parts of Indium sesquioxides are added mixed metal oxide, add the zirconia ball of 68 parts, the pure water of 30 parts and the dispersion agent of 2 parts again, above material grinding is fully mixed to get slurry, then slurry is poured in the porousness mould of three cun, dry 19 hours, demoulding forms idiosome, again through the high temperature sintering 5 hours of 1600 degree, form sputter target idiosome, become three cun of electric conductive oxidation indium targets through cutting with surface grinding.
Wherein mixed metal oxide is the boron oxide of 0.8 part of stannic oxide and 3.2 parts, and milling time is 28 hours.
Wherein dispersion agent is massfraction is 1.0% aqueous sodium polyacrylate.
A kind of method preparing novel conductive indium oxide film, by above-mentioned obtained electric conductive oxidation indium target first with the Mo film that DC power supply sputter the first layer 500nm is thick, then evaporation manufactures the thick CIGS absorption layer film of second layer 2000nm altogether, then be coated with the thick CdS film of third layer 100nm with immersion method, then with vacuum-pumping system, sputter cavity background pressure be evacuated to 0.65 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, carries out sputter process with the RF power supply that power is 250 watts, the transparent conductive oxide indium film of obtained film thickness 110nm.
Comparative example 1:
The performance of the transparent conductive oxide Indium film that embodiment 1-12 and comparative example 1 obtain is as shown in the table:
As can be seen from upper table result, in the novel conductive Indium sesquioxide target adopting the embodiment 1-9 of preparation technology of the present invention to obtain and the performance of indium oxide film, efficiency of conversion, resistance, transmittance, target density is obviously better than the comparative example 1 preparing electric conductive oxidation indium target in embodiment 10-12 outside processing range and prior art, the mode of visible injection forming of the present invention and the technique of the third oxide compound of interpolation, improve the chemical stability of Indium sesquioxide material, and improve the transparence of film long wavelength, significantly improve the applicability of indium oxide film in the thin-film solar cells such as touch screen and CIGS, the requirement meeting production reduces production cost, meet the needs of production.
Claims (7)
1. prepare the method for novel oxidized indium film for one kind, it is characterized in that: the preparation method of electric conductive oxidation indium target is: the weight of following material represents with parts by weight: 100 parts of Indium sesquioxides are added mixed metal oxide, add the zirconia ball of 68 parts again, the dispersion agent of the pure water of 30 parts and 2 parts, above material grinding is fully mixed to get slurry, then slurry is poured in the porousness mould of three cun, dry 20-28 hour, demoulding forms idiosome, again through the high temperature sintering 5.5-6.5 hour of 1400-1550 degree, form sputter target idiosome, three cun of electric conductive oxidation indium targets are become with surface grinding through cutting,
By above-mentioned obtained electric conductive oxidation indium target first with the Mo film that DC power supply sputter the first layer 500nm is thick, then evaporation manufactures the thick CIGS absorption layer film of second layer 2000nm altogether, then be coated with the thick CdS film of third layer 100nm with immersion method, then with vacuum-pumping system, sputter cavity background pressure be evacuated to 0.7 × 10
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, carries out sputter process with the RF power supply that power is 250 watts, the transparent conductive oxide indium film of obtained film thickness 90-110nm;
Mixed metal oxide is the stannic oxide of 1-10 part and the titanium oxide of 0.1-3.0 part, and milling time is 7-9 hour; Or the molybdenum oxide of the stannic oxide of 1-10 part and 0.1-3.0 part, milling time is 22-26 hour; Or the boron oxide of 1-10 part stannic oxide and 0.1-3.0 part, milling time is 22-26 hour.
2. a kind of method preparing novel oxidized indium film as claimed in claim 1, is characterized in that: wherein dispersion agent is massfraction is 0.5-2% aqueous sodium polyacrylate.
3. a kind of method preparing novel oxidized indium film as claimed in claim 1, it is characterized in that: the preparation method of electric conductive oxidation indium target is: the weight of following material represents with parts by weight: 100 parts of Indium sesquioxides are added mixed metal oxide, add the zirconia ball of 68 parts again, the dispersion agent of the pure water of 30 parts and 2 parts, above material grinding is fully mixed to get slurry, then slurry is poured in the porousness mould of three cun, dry 24 hours, demoulding forms idiosome, again through the high temperature sintering 6.0 hours of 1480 degree, form sputter target idiosome, three cun of electric conductive oxidation indium targets are become with surface grinding through cutting,
By above-mentioned obtained electric conductive oxidation indium target first with the Mo film that DC power supply sputter the first layer 500nm is thick, then evaporation manufactures the thick CIGS absorption layer film of second layer 2000nm altogether, then be coated with the thick CdS film of third layer 100nm with immersion method, then with vacuum-pumping system, sputter cavity background pressure be evacuated to 0.8 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, carries out sputter process with the RF power supply that power is 250 watts, the transparent conductive oxide indium film of obtained film thickness 100nm.
4. a kind of method preparing novel oxidized indium film as claimed in claim 3, is characterized in that: mixed metal oxide is the stannic oxide of 5 parts and the titanium oxide of 1.5 parts, and milling time is 8 hours.
5. a kind of method preparing novel oxidized indium film as claimed in claim 3, is characterized in that: mixed metal oxide is the stannic oxide of 5 parts and the molybdenum oxide of 1.5 parts, and milling time is 24 hours.
6. a kind of method preparing novel oxidized indium film as claimed in claim 3, is characterized in that: mixed metal oxide is the boron oxide of 5 parts of stannic oxide and 1.5 parts, and milling time is 24 hours.
7. a kind of method preparing novel oxidized indium film as claimed in claim 3, is characterized in that: wherein dispersion agent is massfraction is 1.2% aqueous sodium polyacrylate.
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| CN109136863A (en) * | 2018-08-16 | 2019-01-04 | 研创应用材料（赣州）股份有限公司 | A kind of preparation method of the polynary conductive oxide film of the RPD of high-weatherability |
| CN112301317B (en) * | 2020-10-30 | 2021-05-18 | 连云港恒顺工业科技有限公司 | Surface treatment process for claw type vacuum pump rotor |
| CN116835965A (en) * | 2023-06-21 | 2023-10-03 | 芜湖映日科技股份有限公司 | High-resistance target material with low bulk resistivity and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101045986A (en) * | 2006-03-27 | 2007-10-03 | 正隆股份有限公司 | Process of making sputtered target material |
| CN101514440A (en) * | 2009-02-19 | 2009-08-26 | 浙江大学 | Method for preparation of indium oxide transparent film with high electron mobility |
| CN102910900A (en) * | 2012-10-31 | 2013-02-06 | 中南大学 | Preparation method of indium tin oxide targets |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110047308A (en) * | 2009-10-30 | 2011-05-09 | 삼성코닝정밀소재 주식회사 | Indium tin oxide sputtering target and transparent conductive film |
-
2013
- 2013-04-24 CN CN201310144600.0A patent/CN103205708B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101045986A (en) * | 2006-03-27 | 2007-10-03 | 正隆股份有限公司 | Process of making sputtered target material |
| CN101514440A (en) * | 2009-02-19 | 2009-08-26 | 浙江大学 | Method for preparation of indium oxide transparent film with high electron mobility |
| CN102910900A (en) * | 2012-10-31 | 2013-02-06 | 中南大学 | Preparation method of indium tin oxide targets |
Non-Patent Citations (1)
| Title |
|---|
| CIGS薄膜太阳能电池的工艺研究与制造;钱群;《中国优秀硕士学位论文全文数据库 工程科技Ⅱ辑》;20110715(第07期);第4、17、20-21、37、43、57页 * |
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