CN102955362A - Novel photo-resistive buffer tank - Google Patents

Novel photo-resistive buffer tank Download PDF

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Publication number
CN102955362A
CN102955362A CN201110242584XA CN201110242584A CN102955362A CN 102955362 A CN102955362 A CN 102955362A CN 201110242584X A CN201110242584X A CN 201110242584XA CN 201110242584 A CN201110242584 A CN 201110242584A CN 102955362 A CN102955362 A CN 102955362A
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CN
China
Prior art keywords
pin
time
integrated circuit
photoresistance
base integrated
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Pending
Application number
CN201110242584XA
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Chinese (zh)
Inventor
胡清强
王波
陈晓琪
鲁旭光
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Hejian Technology Suzhou Co Ltd
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Hejian Technology Suzhou Co Ltd
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Application filed by Hejian Technology Suzhou Co Ltd filed Critical Hejian Technology Suzhou Co Ltd
Priority to CN201110242584XA priority Critical patent/CN102955362A/en
Publication of CN102955362A publication Critical patent/CN102955362A/en
Pending legal-status Critical Current

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Abstract

The invention discloses a novel photo-resistive buffer tank. The tank comprises a tank body, an input pipeline, an output pipeline and a discharge pipeline, wherein the input pipeline and the output pipeline are connected to the lower end surface of the tank body, and the discharge pipeline is connected to the upper end surface of the tank body. The input pipeline of the novel photo-resistive buffer tank is connected to the lower end surface of the tank body, so a photo-resistor punches out of the input pipeline and does not generate downward impact force when the L/E discharge of the photo-resistor having a lower CP value is carried out in order to avoid the rushing of micro-bubbles to the output pipeline in the above process, thereby the novel photo-resistive buffer tank can prevent the rushing of the micro-bubbles to the output pipeline in the photo-resistor replacement and bubble discharging processes.

Description

A kind of novel photoresistance surge tank
Technical field
The present invention relates to a kind of photoresistance supply equipment, particularly a kind of novel photoresistance surge tank.
Background technology
In wafer production processes, use the photoresistance technique that is absolutely necessary.Existing photoresistance L/E surge tank is in the process of changing photoresistance exhaust bubble, because the meeting less than normal of photoresistance CP value is often poured some microbubbles (Micro Bubble) in output (OUT) pipeline, can make like this microbubble in the light arrive nozzle (Nozzle) along pipeline, be sprayed on the product, have a strong impact on product quality.
Figure 1 shows that the photoresistance L/E surge tank that generally uses on the present board, wherein A/B/C represents respectively the input/discharge of photoresistance/output (being IN/DRAIN/OUT) pipeline, when CP value photoresistance less than normal is being L/E and is being discharged (L/E Vent) action, photoresistance can be rushed out rapidly from the A pipe, the microbubble that forms in this process will be flushed in the C pipe, accumulating over a long period to form makes the C pipe form blank pipe near that section of a pipe of tank body G, can cause like this photoresistance to be sprayed in poor shape on the product, even have bubble, have a strong impact on product quality.
Summary of the invention
The object of the present invention is to provide a kind of New Buffering tank, it can prevent that microbubble pours output pipe in the process of changing photoresistance exhaust bubble.
For achieving the above object, the present invention adopts following technical scheme:
A kind of novel photoresistance surge tank comprises tank body, intake line, output pipe and discharge line, and described intake line and output pipe are connected on the lower surface of described tank body, and described discharge line is connected on the upper surface of described tank body.
As the optimization to technique scheme, described tank interior one segment distance is stretched in the end of described intake line.
As the optimization to technique scheme, the end of described intake line stretches to the zone line of described tank interior.
The intake line of novel photoresistance surge tank of the present invention is connected on the lower surface of tank body, when CP value photoresistance less than normal is done the L/E discharging operation, photoresistance is not gone out from intake line can produce downward impulsive force, avoid being flushed in the output pipe forming microbubble in this process, thereby the present invention can prevent that microbubble pours output pipe in the process of changing photoresistance exhaust bubble, avoid microbubble to be sprayed on the product, improve the quality of products.
Description of drawings
Fig. 1 is the structural representation of the photoresistance L/E surge tank that generally uses of board of the prior art.
Fig. 2 is the structural representation of novel photoresistance surge tank of the present invention.
Embodiment
In order to make purpose of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, is not intended to limit the present invention.
Figure 2 shows that novel photoresistance surge tank of the present invention, it comprises tank body G, intake line D, output pipe E and discharge line F, and intake line D and output pipe E are connected on the lower surface of tank body G, and discharge line F is connected on the upper surface of tank body G.
The intake line D of novel photoresistance surge tank of the present invention is connected on the lower surface of tank body, when CP value photoresistance less than normal is done the L/E discharging operation, photoresistance is not gone out from intake line D can produce downward impulsive force, avoids being flushed in the output pipe E forming microbubble in this process.Thereby the present invention can prevent that microbubble pours output pipe E in the process of changing photoresistance exhaust bubble, avoids microbubble to be sprayed on the product, improves the quality of products.
In order to prevent more effectively that microbubble pours output pipe E in the process of changing photoresistance exhaust bubble, the inner segment distance of tank body G can also be stretched in the end of the intake line D of novel photoresistance surge tank of the present invention, as shown in Figure 2.Like this, photoresistance replenishes in the process of photoresistance by intake line D to surge tank, the portion gas that intake line D sky falls can not be added in the photoresistance of opening part of intake line E, just the microbubble that forms in this process is flushed in the intake line E yet, thereby can prevents more effectively that intake line E from forming blank pipe.
The present invention preferably stretches to the end of novel photoresistance surge tank intake line D the zone line of tank body G inside, and as shown in Figure 2, intake line D upwards exceeds half the height of tank body G in tank body G inside.
The above is preferred embodiment of the present invention only, is not to limit practical range of the present invention; If do not break away from the spirit and scope of the present invention, the present invention is made amendment or is equal to replacement, all should be encompassed in the middle of the protection domain of claim of the present invention.

Claims (9)

1. novel photoresistance surge tank, it is characterized in that, comprise time-base integrated circuit, 1 pin of described time-base integrated circuit links to each other with 2 pin with the second resistance by the first resistance respectively with 3 pin, 3 pin of described time-base integrated circuit link to each other by the first electric capacity with 5 pin, at 6 pin or the 7 pin series lamps of time-base integrated circuit, and 6 pin of time-base integrated circuit and 7 pin formation plug;
Wherein, described time-base integrated circuit is comprised of 555 time base circuits and solid-state relay, 3 pin of described 555 time base circuits are connected with one-way SCR in the described solid-state relay, conducting and cut-off with the control one-way SCR, 8 pin of described 555 time base circuits link to each other with the bridge rectifier in the solid-state relay, and 8,7,6,2 pin of described 555 time base circuits form 1,2,3,4 pin of described time-base integrated circuit; 1,5 pin of described 555 time base circuits link to each other with one-way SCR and bridge rectifier and form 5 pin of described time-base integrated circuit; The output terminal of solid-state relay is respectively 6 pin and 7 pin of described time-base integrated circuit.
2. novel photoresistance surge tank according to claim 1 is characterized in that, described the second resistance is variable resistor, and its sliding end is connected with 4 pin of described time-base integrated circuit.
3. novel photoresistance surge tank according to claim 1 is characterized in that, 8 pin of described 555 time base circuits link to each other by the 3rd resistance with bridge rectifier.
4. novel photoresistance surge tank according to claim 1 is characterized in that, is in series with the second electric capacity between 5 pin of 5 pin of described 555 time base circuits and described time-base integrated circuit.
5. novel photoresistance surge tank according to claim 1 is characterized in that, is in series with diode and the 3rd electric capacity between 1 pin of described time-base integrated circuit and 5 pin, and 4 pin of described 555 time base circuits are connected between diode and the 3rd electric capacity.
6. novel photoresistance surge tank according to claim 1 is characterized in that, is connected with commutation diode and the 4th electric capacity in parallel between 1 pin of described time-base integrated circuit and 5 pin.
7. novel photoresistance surge tank according to claim 1 is characterized in that, is in series with the 5th electric capacity between 5 pin of 3 pin of described 555 time base circuits and described time-base integrated circuit.
8. novel photoresistance surge tank according to claim 1 is characterized in that, is in series with the 4th resistance between 7 pin of described bidirectional triode thyristor and time-base integrated circuit.
9. time-base integrated circuit according to claim 1 is characterized in that, is in series with the 5th resistance and the 6th electric capacity between 6 pin of described time-base integrated circuit and 7 pin.
CN201110242584XA 2011-08-23 2011-08-23 Novel photo-resistive buffer tank Pending CN102955362A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201110242584XA CN102955362A (en) 2011-08-23 2011-08-23 Novel photo-resistive buffer tank

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201110242584XA CN102955362A (en) 2011-08-23 2011-08-23 Novel photo-resistive buffer tank

Publications (1)

Publication Number Publication Date
CN102955362A true CN102955362A (en) 2013-03-06

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Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1153104A (en) * 1995-12-29 1997-07-02 邱长埙 Method for mfg. composite pipe by resin injection moulding
CN1212640A (en) * 1996-07-11 1999-03-31 精工爱普生株式会社 Resist coating apparatus and coating method
CN201017172Y (en) * 2007-01-08 2008-02-06 和舰科技(苏州)有限公司 Light blockage supply piping installation
CN201077136Y (en) * 2007-07-03 2008-06-25 云南自主择业集团西原科技工程有限公司 Polyurethane metal resinous tube pressure-casting die
CN101349583A (en) * 2008-06-24 2009-01-21 兰州理工大学 Method and device for measuring non-stationary flow of tiny flow
CN101398626A (en) * 2007-09-26 2009-04-01 中芯国际集成电路制造(上海)有限公司 Photo resist supply device
CN101642591A (en) * 2008-08-05 2010-02-10 李涛 Method for treating endotoxemia by using anion-exchange resin as adsorbent
CN201438260U (en) * 2009-05-19 2010-04-14 中芯国际集成电路制造(上海)有限公司 Developing tank applied to coating developing device
CN101805034A (en) * 2010-03-17 2010-08-18 北京迪威尔石油天然气技术开发有限公司 Method and device for reducing COD of sewage generated by crude oil deacidification
CN201732677U (en) * 2010-06-13 2011-02-02 江苏伯乐达变压器有限公司 Upright pouring die

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1153104A (en) * 1995-12-29 1997-07-02 邱长埙 Method for mfg. composite pipe by resin injection moulding
CN1212640A (en) * 1996-07-11 1999-03-31 精工爱普生株式会社 Resist coating apparatus and coating method
CN201017172Y (en) * 2007-01-08 2008-02-06 和舰科技(苏州)有限公司 Light blockage supply piping installation
CN201077136Y (en) * 2007-07-03 2008-06-25 云南自主择业集团西原科技工程有限公司 Polyurethane metal resinous tube pressure-casting die
CN101398626A (en) * 2007-09-26 2009-04-01 中芯国际集成电路制造(上海)有限公司 Photo resist supply device
CN101349583A (en) * 2008-06-24 2009-01-21 兰州理工大学 Method and device for measuring non-stationary flow of tiny flow
CN101642591A (en) * 2008-08-05 2010-02-10 李涛 Method for treating endotoxemia by using anion-exchange resin as adsorbent
CN201438260U (en) * 2009-05-19 2010-04-14 中芯国际集成电路制造(上海)有限公司 Developing tank applied to coating developing device
CN101805034A (en) * 2010-03-17 2010-08-18 北京迪威尔石油天然气技术开发有限公司 Method and device for reducing COD of sewage generated by crude oil deacidification
CN201732677U (en) * 2010-06-13 2011-02-02 江苏伯乐达变压器有限公司 Upright pouring die

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Application publication date: 20130306