CN102946048B - Raman laser based on crystalline in fresnoite structure - Google Patents

Raman laser based on crystalline in fresnoite structure Download PDF

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CN102946048B
CN102946048B CN201210488424.8A CN201210488424A CN102946048B CN 102946048 B CN102946048 B CN 102946048B CN 201210488424 A CN201210488424 A CN 201210488424A CN 102946048 B CN102946048 B CN 102946048B
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raman
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crystal
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CN102946048A (en
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张怀金
王继扬
申传英
赵显�
王正平
赵永光
于浩海
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Shandong University
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Abstract

The invention relates to a Raman laser based on a crystalline in a fresnoite structure. The laser comprises a pump source, a laser resonant cavity and a Raman crystalline. The Raman crystalline in the fresnoite structure adjusts the laser wavelength and generates laser output provided with fixed frequency shift, the Raman crystalline in the fresnoite structure is obtained through a czochralski method, the general formula is A2RM2O8, wherein A=Ca, Sr or BA; R=Ti or V; and M=Si or Ge. The Raman crystalline is placed outside the laser resonant cavity to form an external cavity type Raman frequency shift laser and placed inside the laser resonant cavity to form an internal cavity type Raman frequency shift laser. The laser has the advantages of being stable in output, simple in structure, high in environmental adaptability and the like.

Description

A kind of Raman laser based on muirite structure crystal
Technical field
The present invention relates to a kind of Raman laser based on muirite structure crystal, relate in particular to and using muirite structure crystal as the Raman laser of Raman gain crystal, belong to laser technology field.
Background technology
Utilize stimulated Raman scattering (SRS) effect of Raman crystal can obtain the laser of the wavelength that solid state laser can not directly launch, utilize existing Raman crystal can obtain the Laser output from ultraviolet band near infrared band, comprise novel gold-tinted, orange ray laser and 1.5 μ m eye-safe laser, in a plurality of fields such as astronomy, military affairs, medical treatment, electronical display, remote sensing, marine exploration, chemistry, be widely used, therefore probing into novel Raman crystal has become one of the focus in investigation of materials field.
The performance of Raman laser, is decided by the characteristic of Raman crystal.The Raman crystal that enters at present the practicality stage has Ba (NO 3) 2, KGd (WO 4) 2and KY (WO 4) 2.Wherein, Ba (NO 3) 2crystal has large stable state Raman gain, is good Raman active medium in stable state Raman laser, but is not suitable for the use of transient state Raman laser and easy deliquescence, and machining property is poor.KGd (WO 4) 2and KY (WO 4) 2crystal has larger transient state Raman gain, but they exist phase transformation between from fusing point to room temperature, can only grow with flux method, so obtain, to be applicable to the larger-size crystal that Raman laser uses more difficult.These have all limited the Raman laser based on above-mentioned crystal, or difficult in maintenance, or expensive, are difficult for extensive use, are difficult to industrialization.
Summary of the invention
The problem existing for existing Raman laser, the invention provides a kind of laser and method of work thereof based on muirite structure Raman crystal.
The present invention also provides the preparation method of muirite structure Raman crystal.
Technical scheme of the present invention is as follows:
An excited Raman laser, comprises pumping source, laserresonator and Raman crystal, adopts the Raman crystal of muirite structure to regulate optical maser wavelength, produces the Laser output with fixedly frequency displacement; The Raman crystal general formula of described muirite structure is:
A 2rM 2o 8, A=Ca wherein, Sr or Ba; R=Ti or V; M=Si or Ge.
Preferred according to the present invention, described Raman crystal is positioned at laserresonator and forms external cavity type Raman frequency shift laser outward; Or Raman crystal is positioned at laserresonator and forms inner chamber Raman frequency shift laser device, laserresonator is by inputting mirror and outgoing mirror forms.
According to the present invention, described external cavity type Raman frequency shift laser is Multiple through then out formula Raman laser outside two through type Raman lasers, chamber outside single through type Raman laser, chamber outside chamber.
Outside chamber, single through type Raman laser consists of pulse laser and Raman crystal successively.
Outside chamber, pass through Raman laser for two times successively by pulse laser, input mirror, Raman crystal and concave output mirror form.
Outside chamber, pass through Raman laser for two times successively by pulse laser, input mirror, Raman crystal and outgoing mirror form.
According to the present invention, described inner chamber Raman frequency shift laser device is the continuous excited Raman frequency double laser of formula in formula pulse Raman laser, chamber in formula continuous Raman frequency double laser, chamber in formula continuous Raman laser, chamber in chamber.
In chamber, formula continuous Raman laser consists of pumping source, optical coupling system, input mirror, solid laser medium, Raman crystal and flat output mirror successively.
In chamber, formula continuous Raman frequency double laser consists of pumping source, optical coupling system, input mirror, solid laser medium, Raman crystal, frequency-doubling crystal and outgoing mirror successively.
In chamber, formula pulse Raman laser consists of pumping source, optical coupling system, input mirror, solid laser medium, acousto-optic Q modulation switch, Raman crystal and outgoing mirror successively.
In chamber, formula continuous Raman frequency double laser is successively by pumping source, optical coupling system, input mirror, solid laser medium, acousto-optic Q modulation switch, and Raman crystal and outgoing mirror form.
According to the present invention, preferably Raman crystal is Ba 2tiSi 2o 8or Ba 2tiGe 2o 8.
According to the present invention, preferably the logical light face of Raman crystal is circle or rectangle, and Raman crystal length is 0.5-50mm, preferably 10-35mm.
Described Raman crystal leads to light mirror polish, plated film or plated film not, by this area routine techniques, processes.
Described pumping source preferred semiconductor laser diode.
The preferred Nd:YAG crystal of described solid laser medium.
Described frequency-doubling crystal is conventional crystal, for example ktp crystal, lbo crystal or bbo crystal of this area.
The method of work of excited Raman laser of the present invention, as one of following:
A, the Raman crystal external cavity type Raman frequency shift laser outside laserresonator, with nanosecond, psec or femtosecond pulse laser be as pumping source, adopts single-pass, bilateral or how logical mode to A 2rM 2o 8raman crystal excites, and obtains pulsed excited Raman Laser output.As Figure 1-3.
Or
Formula frequency displacement Raman laser in B, the Raman crystal chamber in laserresonator, produces laser L with laser diode pumping laser crystal, and wavelength is 1.06 μ m, 1.34 μ m or 532nm:
I. described laser L passes through A 2rM 2o 8raman crystal makes laser generation frequency displacement, obtains the excited Raman laser I output of continous way scattering.Further, the frequency doubled light that this excited Raman laser I is obtained to respective wavelength by frequency-doubling crystal is exported.As shown in Fig. 4-5.
Or
Described in ii, laser L modulates by electric light, acousto-optic or passive Q-adjusted original paper, produces pulse laser, then passes through A 2rM 2o 8raman crystal obtains the excited Raman laser I output of pulsed scattering.Further, the frequency doubled light that this excited Raman laser I is obtained to respective wavelength by frequency-doubling crystal is exported.As shown in Fig. 6-7.
Described excited Raman laser I wavelength comprises 1172nm, 1.5 μ m, 587nm or 558nm.
The above-mentioned muirite structure Raman crystal of the present invention adopts melt czochralski method to make, and preparation method is described as follows.
A 2rM 2o 8the preparation method of crystal, with ACO 3, RO 2and MO 2for raw material, reaction equation is: 2ACO 3+ RO 2+ 2MO 2=A 2rM 2o 8+ 2CO 2↑, A=Ca wherein, Sr or Ba; R=Ti or V; M=Si or Ge.Adopt melt czochralski method to carry out crystal growth, crystal growth step comprises:
(1) substantially according to A 2tiM 2o 8the molar ratio weighing raw material of each component mix briquetting in formula, is placed in platinum crucible at 700～1300 ° of C sintering, and insulation 10-15h, obtains polycrystal material.
(2) polycrystal material is placed in platinum crucible, is warmed up to 800～1500 ° of C and makes polycrystal material fusing; Lower seed crystal, crystal growth temperature is between 800～1500 ° of C, and the pull rate of crystal growth is 0.5～2 milli m/h, 10～30 revs/min of rotating speeds.
(3) the complete room temperature that is cooled to of crystal growth; The crystal of having grown is annealed in annealing furnace, and annealing temperature is at 650～1000 ° of C, and annealing atmosphere is air.
In above-mentioned steps (2), the pull rate of preferred crystal growth is 0.6-1.5 milli m/h, rotating speed 15-20 rev/min.
In above-mentioned steps (2), for making solid phase reaction complete, preferably polycrystal material melts rear constant temperature 2-10 hour, more lower seed crystal.
In above-mentioned steps (3) for preventing crystal cleavage, preferably by crystal slow cooling to room temperature.20 ° of C/ hour of rate of temperature fall.
In above-mentioned steps (2), crystal growth cycle can be determined the needs of Raman crystal size according to laser, in general within 5-15 days, can obtain the crystal of the about 35mm * 35mm * 50mm of size.
Finally the crystal of gained is processed to processing, polishing, in order to prepare quartz crystal device.
A of the present invention 2rM 2o 8the preparation grower used of crystal is induction heating pull-type single crystal growing furnace, this area conventional equipment (as shown in Figure 9).
The core of such laser is preferably to adopt muirite structure Raman crystal, this muirite structure Raman crystal fusing point does not have phase transformation between room temperature, have that physical and mechanical properties is stable, Raman gain coefficienct is high, the advantage such as deliquescence, available Czochralski grown large-size crystals not, such laser has the advantages such as stable output, simple in structure, environmental suitability is strong, makes laser based on muirite structure crystal have the prospect of industrialization extensive use.
Accompanying drawing explanation
Single through type Raman laser structure figure outside the chamber of Fig. 1 based on muirite structure Raman crystal, in figure, 1, pulse laser, 2, Raman crystal.
Two through type Raman laser structure figure outside the chamber of Fig. 2 based on muirite structure Raman crystal, in figure, 1, pulse laser, 2, Raman crystal, 3, input mirror, 4, concave output mirror.
Multiple through then out formula Raman laser structure figure outside the chamber of Fig. 3 based on muirite structure Raman crystal, in figure, 1, pulse laser, 2, Raman crystal, 3, input mirror, 5, flat output mirror.
The structure chart of formula continuous Raman laser in the chamber of Fig. 4 based on muirite structure Raman crystal, in figure, 2, Raman crystal, 3, input mirror, 5, flat output mirror, 6, pumping source, 7, optical coupling system, 8, solid laser medium.
Formula continuous Raman frequency double laser structure chart in the chamber of Fig. 5 based on muirite structure Raman crystal, in figure, 2, Raman crystal, 3, input mirror, 5, outgoing mirror 6, pumping source, 7, optical coupling system, 8, solid laser medium, 9, frequency-doubling crystal.
Formula pulse Raman laser structure figure in the chamber of Fig. 6 based on muirite structure Raman crystal, in figure, 2, Raman crystal, 3, input mirror, 5, outgoing mirror 6, pumping source, 7, optical coupling system, 8, solid laser medium, 10, acoustooptic switch.
Formula pulse Raman frequency doubling laser structure figure in the chamber of Fig. 7 based on muirite structure Raman crystal, in figure, 2, Raman crystal, 3, input mirror, 5, outgoing mirror, 6, pumping source, 7, optical coupling system, 8, solid laser medium, 9, frequency-doubling crystal, 10, acoustooptic switch.
Single through type laser Raman spectrum outside the chamber of Fig. 8 based on muirite structure Raman crystal, λ ffor pump light, S 1for one-level Stokes light, S 2for secondary Stokes light.
Fig. 9 crystal growing apparatus schematic diagram.In figure, 11, high frequency coil, 12, platinum crucible, 13, melt, 14, seed crystal.
Embodiment
Below in conjunction with drawings and Examples, the present invention will be further described, and these drawings and Examples only, for the present invention is described, are not limited to this.
Embodiment 1:Ba 2tiSi 2o 8single through type Raman laser outside the chamber of Raman crystal.
As shown in Figure 1, this laser is comprised of pulse laser 1 and Raman crystal 2 structure.Pulse laser 1 use flash lamp pumping, the picosecond pulse laser device that carries out dual modulation formation with acousto-optic modulator and dyestuff saturable absorption material, its output wavelength is the pulse laser that 532nm, pulsewidth 30ps, repetition rate are 10Hz; Pass through again Ba 2tiSi 2o 8raman crystal produces excited Raman light.Fig. 8 is the output laser Raman spectrum figure of this laser, obviously can see the one-level raman laser of 558nm and the output of the secondary raman laser of 587nm from figure.
Described Raman crystal 2 is Ba 2tiSi 2o 8crystal, it is of a size of 5 * 5 * 25mm 3, logical light face is 5 * 5mm 2, its twin polishing is plated film not.
Ba 2tiSi 2o 8crystal preparation method:
Reaction equation: 2BaCO 3+ TiO 2+ 2SiO 2=Ba 2tiSi 2o 8+ 2CO 2↑
The initial feed that the present embodiment adopts is BaCO 3, TiO 2and SiO 2, by Ba 2tiSi 2o 8stoichiometric proportion raw materials weighing, mix, briquetting, puts into platinum crucible at 1000～1300 ° of C sintering, constant temperature 12h obtains the Ba that grows 2tiSi 2o 8the polycrystal material of crystal.By Ba 2tiSi 2o 8polycrystal material is put into platinum crucible, and platinum crucible is placed in to single crystal pulling stove, adopts the mode of Frequency Induction Heating, is warmed up to the above uniform temperature of fusing point, constant temperature a period of time; Use the Ba of c direction 2tiSi 2o 8seed crystal, is lowered to seed crystal near reducing the temperature to fusing point, and through receiving neck, shouldering, isodiametric growth, growth temperature is 1400～1500 ° of C, pull rate 0.5～2 milli m/h, 10～30 revs/min of rotary speeies.After crystal growth, with 10～30 degrees Celsius/hour, cool to room temperature.Grown crystal is placed in to the thermal stress that resistance furnace annealing produces to eliminate crystal growing process, and annealing temperature is 1000 ° of C, and annealing time is 20h.Then as required to grown crystal process, polishing.Cut direction is along crystallographic axis c-axis.
Embodiment 2:Ca 2tiSi 2o 8two through type Raman lasers outside the chamber of crystal.
As shown in Figure 2, this laser, by pulse laser 1, is inputted mirror 3 to structure, and Raman crystal 2 and concave output mirror 4 are arranged in order along light path.The laser of pulse laser 1 output wavelength 532nm, pulsewidth 30ps, repetition rate 10Hz.The plating of input mirror 3 be take to the transmitance of incident light 532nm as being greater than 99%, to the reflectivity of raman laser 558nm as being greater than 99% deielectric-coating.Outgoing mirror 4 plating with to the reflectivity of incident light 532nm for being greater than 99%, to the transmitance of Raman light 558nm, be to be greater than 99% deielectric-coating.
Identical with embodiment 1 of described pulse laser 1.
Described Raman crystal 3 is Ca 2tiSi 2o 8crystal is the cylinder of length 35mm.Logical light face is disc, and its twin polishing plating are with to 532 and the deielectric-coating of 558nm high transmission.Ca 2tiSi 2o 8the preparation of crystal by adopting czochralski method, initial feed is CaCO 3, TiO 2and SiO 2, Ba in all the other steps and embodiment 1 2tiSi 2o 8crystal preparation method is basic identical.
Described input mirror and outgoing mirror are concave mirror, and radius of curvature is all 100mm.
Strengthen incident laser power, can obtain the stimulated Raman scattering light that is output as 558nm.
Embodiment 3:Sr 2tiSi 2o 8multiple through then out formula Raman laser outside the chamber of crystal.
As shown in Figure 3, this laser, by pulse laser 1, is inputted mirror 3 to structure, and Raman crystal 2 and outgoing mirror 5 are arranged in order composition along light path.Input mirror 3 concave surfaces are 45 ° of angles towards pulse laser 1, its plane and laser direction, and Raman crystal 2 and outgoing mirror 5 are positioned in the catoptrical light path of input mirror 3.
Described pulse laser 1 output wavelength is 532nm, pulsewidth 30ps, the pulse laser that repetition rate is 10Hz.The plating of input mirror 3 is to be greater than 99% and Raman light (558nm) the reflectivity deielectric-coating that is greater than 99% to fundamental frequency light transmission rate, outgoing mirror 5 be level crossing, and the deielectric-coating fundamental frequency light reflectivity is greater than to 99%, Raman light (558nm) transmitance is greater than to 99% is plated on two sides.Described input mirror 3 concave curvature radiuses are 200mm.
Identical with embodiment 1 of described pulse laser 1.
Described Raman crystal 3 is Sr 2tiSi 2o 8crystal, it is of a size of 5 * 5 * 15mm 3, logical light face is 5 * 5mm 2, its twin polishing is plated film not.Sr 2tiSi 2o 8the preparation of crystal by adopting czochralski method, initial feed is SrCO 3, TiO 2and SiO 2, Ba in all the other steps and embodiment 1 2tiSi 2o 8crystal preparation method is basic identical.
Strengthen incident laser power, can realize the output of 558nm raman laser.
Embodiment 4:Ba 2tiGe 2o 8formula continuous Raman laser in the chamber of crystal.
Structure as shown in Figure 4, arranged and form along light path order by pumping source 6, optical coupling system 7, input mirror 3, solid laser medium 8, Raman crystal 2 and flat output mirror 5 by this laser.This solid laser medium 8 is Nd:YAG crystal, the anti-reflection film of plating so that pump light (808nm) and fundamental frequency light (1064nm) transmitance are greater than to 99% on its two logical light end faces.Raman crystal 2 is Ba 2tiGe 2o 8crystal, on its two logical light end face, plating is with to 1064 and the deielectric-coating of 1172nm high transmission.The plating of input mirror 3 to be so that pump light (808nm) transmitance is greater than to 99%, the deielectric-coating that fundamental frequency light (1064nm) and Raman light (1172nm) reflectivity are greater than to 99%; Outgoing mirror 5 plated surfaces to be so that fundamental frequency light (1064nm) reflectivity is greater than to 99%, the deielectric-coating that is 10% to Raman light (1172nm) transmitance.
Described pumping source 6 is that output wavelength is the semiconductor laser diode of the InGaAs of 808nm.
Described input mirror 3 is that curvature is the concave mirror of 200mm, and outgoing mirror 5 is level crossings.
Described solid laser medium 4 is Nd:YAG crystal, and the doping content of neodymium is 0.5at.%, and Nd:YAG crystal is cuboid, and length is 6mm.
Described Raman crystal 5 is Ba 2tiGe 2o 8crystal, logical light face 2 * 5mm 2, the cuboid of length 30mm, the deielectric-coating of plating so that 1064nm and 1172nm transmitance are greater than to 99% on its two logical light end face.Ba 2tiGe 2o 8the preparation of crystal by adopting czochralski method, initial feed is BaCO 3, TiO 2and GeO 2, all the other steps are with Ba in embodiment 1 2tiSi 2o 8crystal preparation method.
The present embodiment is simple in structure, easy to operate.Realized the stable continuous laser output of 1172nm.
Embodiment 5:Ba 2vSi 2o 8formula continuous Raman frequency double laser in the chamber of crystal
As shown in Figure 5, this laser is by pumping source 6, optical coupling system 7, input mirror 3, solid laser medium 8, Raman crystal 2 for structure, and frequency-doubling crystal 9 and outgoing mirror 5 are arranged along light path successively order.Input mirror 3 plates so that pump light (808nm) transmitance is greater than to 99%, the deielectric-coating that fundamental frequency light (1064nm), Raman light (1172nm) and Raman frequency doubling light (586nm) reflectivity are greater than to 99%.Outgoing mirror 5 is inboard to be plated so that fundamental frequency light (1064nm), Raman light (1172nm) reflectivity are greater than to 99%, the deielectric-coating that Raman frequency doubling light (586nm) transmitance is greater than 99%, the deielectric-coating of outside plating so that Raman frequency doubling light (586nm) transmitance is greater than to 99%.
Described pumping source 6 is that output wavelength is the semiconductor laser diode of the InGaAs of 808nm.
Described input mirror 3 is that curvature is the concave mirror of 800mm, and outgoing mirror 5 is level crossings.Identical with embodiment 5 of described solid laser medium 8 and Raman crystal 2 sizes, selected Raman crystal is Sr 2vSi 2o 8crystal.
Described frequency-doubling crystal 10 is lbo crystal, is cuboid, and it is of a size of 3 * 3 * 15mm 3, logical light face is 5 * 5mm 2, polishing both surfaces plating are with the deielectric-coating to 586nm, 1064nm and 1172nm high transmission.Strengthen pump power, can realize the continuous stimulated Raman scattering light output that 1172nm is stable.
Ba 2vSi 2o 8the preparation method of crystal:
Ba 2vSi 2o 8crystal preparation method:
Reaction equation: 2BaCO 3+ VO 2+ 2SiO 2=Ba 2vSi 2o 8+ 2CO 2↑
The initial feed that the present embodiment adopts is BaCO 3, VO 2and SiO 2, by Ba 2vSi 2o 8stoichiometric proportion raw materials weighing, mix, briquetting, puts into platinum crucible at 900～1200 ° of C sintering, constant temperature 12h obtains the Ba that grows 2vSi 2o 8the polycrystal material of crystal.By Ba 2vSi 2o 8polycrystal material is put into platinum crucible, and platinum crucible is placed in to single crystal pulling stove, adopts the mode of Frequency Induction Heating, is warmed up to the above uniform temperature of fusing point, constant temperature a period of time; Near reducing the temperature to fusing point, be lowered to seed crystal, use the Ba of c direction 2vSi 2o 8seed crystal, through receiving neck, shouldering, isodiametric growth, growth temperature is 1300～1500 ° of C, pull rate 0.5～2 milli m/h, 10～30 revs/min of rotary speeies.After crystal growth, with 10～30 degrees Celsius/hour, cool to room temperature.Grown crystal is placed in to the thermal stress that resistance furnace annealing produces to eliminate crystal growing process, and annealing temperature is 1000 ° of C, and annealing time is 20h.Then as required to grown crystal process, polishing.Cut direction is along crystallographic axis c-axis.
Embodiment 6:Ca 2tiGe 2o 8formula pulse Raman laser in the chamber of crystal
As shown in Figure 6, this laser is by pumping source 6, optical coupling system 7, input mirror 3, solid laser medium 8, acousto-optic Q modulation switch 10 for structure, and Raman crystal 2 and outgoing mirror 5 are arranged along light path order.Its input mirror 3 plating is with to pump light (808nm) high transmission and to 1064nm laser high transmission, to the high reflection of 1.34 μ m laser, deielectric-coating to the high reflection of Raman light (1.5 μ m), outgoing mirror 5 platings with to 1064nm laser high transmission and to the high reflection of 1.34 μ m laser, 1.5 μ m laser are seen through to 5% deielectric-coating.This solid laser medium 8 is Nd:YAG crystal, the anti-reflection film that on its two logical light end faces, plating is greater than 99% with pump light (808nm) and fundamental frequency light (1.34 μ m) transmitance.
Described pumping source 6 is that output wavelength is the semiconductor laser diode of the InGaAs of 808nm.
Described input mirror 3 is that curvature is the concave mirror of 500mm, and outgoing mirror 5 is level crossings.
Described solid laser medium 8 is Nd:YAG crystal, and the doping content of neodymium is 0.5at.%, and Nd:YAG crystal is cuboid, and length is 6mm.
The modulation frequency range of described acousto-optic Q modulation switch 10 is 100Hz-100KHz.
Described Raman crystal 2 is Ca 2tiGe 2o 8crystal, is of a size of 5 * 5 * 25mm 3, logical light face is 5 * 5mm 2, its twin polishing is plated film not.
Strengthen pump power, can realize 1.5 μ m stimulated Raman scattering Laser outputs.
Ca 2tiGe 2o 8the preparation of crystal by adopting czochralski method, initial feed is CaCO 3, TiO 2and GeO 2, all the other steps are with Ba in embodiment 1 2tiSi 2o 8crystal preparation method.
Embodiment 7:Ba 2vGe 2o 8formula pulse Raman frequency doubling laser in the chamber of crystal
As shown in Figure 7, this laser is by pumping source 6, optical coupling system 7, input mirror 3, solid laser medium 8, acousto-optic Q modulation switch 10 for structure, Raman crystal 2, and frequency-doubling crystal 9 and outgoing mirror 5 are arranged along light path order.The plated film situation of input mirror 3 and outgoing mirror 5 is identical with the plated film situation of inputting mirror 3 and outgoing mirror 5 in embodiment 4 respectively.Raman crystal 2 sizes, solid laser medium 8 and frequency-doubling crystal 9 are corresponding identical with embodiment 5, and selected Raman crystal is Ba 2vGe 2o 8crystal.
Described pumping source 6 is that output wavelength is the semiconductor laser diode of the InGaAs of 808nm.
Described input mirror 3 is that curvature is the concave mirror of 200mm, and outgoing mirror 8 is level crossings.
The modulation frequency range of described acousto-optic Q modulation switch 9 is 100Hz-100KHz.
Strengthen pump power, can realize 587nm stimulated Raman scattering Laser output.
Ba 2vSi 2o 8ba in the preparation of crystal and embodiment 5 2vSi 2o 8crystal preparation process is identical, and difference is that initial feed is SrCO 3, VO 2and GeO 2.

Claims (6)

1. an excited Raman laser, comprises pumping source, laserresonator and Raman crystal, it is characterized in that adopting the Raman crystal of muirite structure to regulate optical maser wavelength, produces the Laser output with fixedly frequency displacement; The Raman crystal general formula of described muirite structure is:
A 2rM 2o 8, A=Ca wherein, Sr or Ba; R=Ti or V; M=Si or Ge;
Described A 2rM 2o 8crystal is prepared by the following method:
With ACO 3, RO 2and MO 2for raw material, reaction equation is: 2ACO 3+ RO 2+ 2MO 2=Ba 2rM 2o 8+ 2CO 2↑, A=Ca wherein, Sr or Ba; R=Ti or V; M=Si or Ge; Adopt melt czochralski method to carry out crystal growth, crystal growth step comprises:
(1) substantially according to A 2tiM 2o 8the molar ratio weighing raw material of each component mix briquetting in formula, is placed in platinum crucible at 700～1300oC sintering, and insulation 10-15h, obtains polycrystal material;
(2) polycrystal material is placed in platinum crucible, is warmed up to 800～1500oC and makes polycrystal material fusing; Lower seed crystal, crystal growth temperature is between 800～1500oC, and the pull rate of crystal growth is 0.5～2 milli m/h, 10～30 revs/min of rotating speeds;
(3) the complete room temperature that is cooled to of crystal growth; The crystal of having grown is annealed in annealing furnace, and annealing temperature is at 650～1000oC, and annealing atmosphere is air.
2. excited Raman laser as claimed in claim 1, is characterized in that described Raman crystal is positioned at laserresonator and forms external cavity type Raman frequency shift laser outward; Or Raman crystal is positioned at laserresonator and forms inner chamber Raman frequency shift laser device, laserresonator is by inputting mirror and outgoing mirror forms.
3. excited Raman laser as claimed in claim 2, is characterized in that described external cavity type Raman frequency shift laser is Multiple through then out formula Raman laser outside two through type Raman lasers or chamber outside single through type Raman laser, chamber outside chamber; Wherein:
Outside chamber, single through type Raman laser consists of pulse laser and Raman crystal successively;
Outside chamber, pass through Raman laser for two times successively by pulse laser, input mirror, Raman crystal and concave output mirror form;
Outside chamber, pass through Raman laser for two times successively by pulse laser, input mirror, Raman crystal and outgoing mirror form.
4. excited Raman laser as claimed in claim 2, is characterized in that described inner chamber Raman frequency shift laser device is the continuous excited Raman frequency double laser of intracavity continuous Raman laser, intracavity, intracavity pulse Raman laser or the continuous excited Raman frequency double laser of intracavity; Wherein:
Intracavity continuous Raman laser consists of pumping source, optical coupling system, input mirror, solid laser medium, Raman crystal and flat output mirror successively;
The continuous excited Raman frequency double laser of intracavity consists of pumping source, optical coupling system, input mirror, solid laser medium, Raman crystal, frequency-doubling crystal and outgoing mirror successively;
Intracavity pulse Raman laser consists of pumping source, optical coupling system, input mirror, solid laser medium, acousto-optic Q modulation switch, Raman crystal and outgoing mirror successively;
The continuous excited Raman frequency double laser of intracavity is successively by pumping source, optical coupling system, input mirror, solid laser medium, acousto-optic Q modulation switch, and Raman crystal and outgoing mirror form.
5. the excited Raman laser as described in claim 1 or 2 or 3, is characterized in that Raman crystal is Ba 2tiSi 2o 8or Ba 2tiGe 2o 8.
6. the method for work of the excited Raman laser as described in claim 1 ~ 3 any one, for one of following:
A, the Raman crystal external cavity type Raman frequency shift laser outside laserresonator, with nanosecond, psec or femtosecond pulse laser be as pumping source, adopts single-pass, bilateral or how logical mode to A 2rM 2o 8raman crystal excites, and obtains pulsed excited Raman Laser output;
Or
B, the Raman crystal intracavity frequency displacement Raman laser in laserresonator, produces laser L with laser diode pumping laser crystal, and wavelength is 1.06 μ m, 1.34 μ m or 532 nm:
I. described laser L passes through A 2rM 2o 8raman crystal makes laser generation frequency displacement, obtains the excited Raman laser I output of continous way scattering; Further, the frequency doubled light that this excited Raman laser I is obtained to respective wavelength by frequency-doubling crystal is exported;
Or
Ii. described laser L modulates by electric light, acousto-optic or passive Q-adjusted element, produces pulse laser, then passes through A 2rM 2o 8raman crystal obtains the excited Raman laser I output of pulsed scattering; Further, the frequency doubled light that this excited Raman laser I is obtained to respective wavelength by frequency-doubling crystal is exported.
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