CN102946048A - Raman laser based on crystalline in fresnoite structure - Google Patents

Raman laser based on crystalline in fresnoite structure Download PDF

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CN102946048A
CN102946048A CN2012104884248A CN201210488424A CN102946048A CN 102946048 A CN102946048 A CN 102946048A CN 2012104884248 A CN2012104884248 A CN 2012104884248A CN 201210488424 A CN201210488424 A CN 201210488424A CN 102946048 A CN102946048 A CN 102946048A
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raman
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crystal
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CN102946048B (en
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张怀金
王继扬
申传英
赵显�
王正平
赵永光
于浩海
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Shandong University
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Shandong University
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Abstract

The invention relates to a Raman laser based on a crystalline in a fresnoite structure. The laser comprises a pump source, a laser resonant cavity and a Raman crystalline. The Raman crystalline in the fresnoite structure adjusts the laser wavelength and generates laser output provided with fixed frequency shift, the Raman crystalline in the fresnoite structure is obtained through a czochralski method, the general formula is A2RM2O8, wherein A=Ca, Sr or BA; R=Ti or V; and M=Si or Ge. The Raman crystalline is placed outside the laser resonant cavity to form an external cavity type Raman frequency shift laser and placed inside the laser resonant cavity to form an internal cavity type Raman frequency shift laser. The laser has the advantages of being stable in output, simple in structure, high in environmental adaptability and the like.

Description

A kind of Raman laser based on the muirite structure crystal
Technical field
The present invention relates to a kind of Raman laser based on the muirite structure crystal, relate in particular to the Raman laser of muirite structure crystal as the Raman gain crystal, belong to laser technology field.
Background technology
Utilize stimulated Raman scattering (SRS) effect of Raman crystal can obtain the laser of the wavelength that solid state laser can not directly launch, utilize existing Raman crystal can obtain Laser output from the ultraviolet band to the near infrared band, comprise novel gold-tinted, orange ray laser and 1.5 μ m eye-safe laser, be widely used in a plurality of fields such as astronomy, military affairs, medical treatment, electronical display, remote sensing, marine exploration, chemistry, therefore probing into novel Raman crystal has become one of the focus in investigation of materials field.
The performance of Raman laser is decided by the characteristic of Raman crystal.The Raman crystal that enters at present the practicality stage has Ba (NO 3) 2, KGd (WO 4) 2And KY (WO 4) 2Wherein, Ba (NO 3) 2Crystal has large stable state Raman gain, is good Raman active medium in the stable state Raman laser, but is not suitable for the use of transient state Raman laser and easy deliquescence, and machining property is poor.KGd (WO 4) 2And KY (WO 4) 2Crystal has larger transient state Raman gain, but there is phase transformation in they between from the fusing point to the room temperature, can only grow with flux method, so obtain to be fit to relatively difficulty of larger-size crystal that Raman laser uses.These have all limited the Raman laser based on above-mentioned crystal, or difficult in maintenance, or expensive, are difficult for extensive use, are difficult to industrialization.
Summary of the invention
Problem for existing Raman laser exists the invention provides a kind of laser and method of work thereof based on muirite structure Raman crystal.
The present invention also provides the preparation method of muirite structure Raman crystal.
Technical scheme of the present invention is as follows:
A kind of excited Raman laser comprises pumping source, laserresonator and Raman crystal, adopts the Raman crystal of muirite structure that optical maser wavelength is regulated, and produces the Laser output with fixedly frequency displacement; The Raman crystal general formula of described muirite structure is:
A 2RM 2O 8, A=Ca wherein, Sr or Ba; R=Ti or V; M=Si or Ge.
Preferred according to the present invention, described Raman crystal is positioned at laserresonator and forms external cavity type Raman frequency shift laser outward; Or Raman crystal is positioned at laserresonator and forms inner chamber Raman frequency shift laser device, and laserresonator is made of input mirror and outgoing mirror.
According to the present invention, described external cavity type Raman frequency shift laser is Multiple through then out formula Raman laser outside two through type Raman lasers, the chamber outside single through type Raman laser, the chamber outside the chamber.
Single through type Raman laser is made of pulse laser and Raman crystal successively outside the chamber.
Outside the chamber two times by Raman lasers successively by pulse laser, input mirror, Raman crystal and concave output mirror consist of.
Outside the chamber two times by Raman lasers successively by pulse laser, input mirror, Raman crystal and outgoing mirror consist of.
According to the present invention, described inner chamber Raman frequency shift laser device is the continuous excited Raman frequency double laser of formula in formula pulse Raman laser, the chamber in formula continuous Raman frequency double laser, the chamber in formula continuous Raman laser, the chamber in the chamber.
The formula continuous Raman laser is made of pumping source, optical coupling system, input mirror, solid laser medium, Raman crystal and flat output mirror successively in the chamber.
Formula continuous Raman frequency double laser is made of pumping source, optical coupling system, input mirror, solid laser medium, Raman crystal, frequency-doubling crystal and outgoing mirror successively in the chamber.
Formula pulse Raman laser is made of pumping source, optical coupling system, input mirror, solid laser medium, acousto-optic Q modulation switch, Raman crystal and outgoing mirror successively in the chamber.
Formula continuous Raman frequency double laser is successively by pumping source, optical coupling system, input mirror, solid laser medium, acousto-optic Q modulation switch in the chamber, and Raman crystal and outgoing mirror consist of.
According to the present invention, preferred Raman crystal is Ba 2TiSi 2O 8Or Ba 2TiGe 2O 8
According to the present invention, the logical light face of preferred Raman crystal is circle or rectangle, and Raman crystal length is 0.5-50mm, preferred 10-35mm.
Described Raman crystal leads to light mirror polish, plated film or plated film not, gets final product by the processing of this area routine techniques.
Described pumping source preferred semiconductor laser diode.
The preferred Nd:YAG crystal of described solid laser medium.
Described frequency-doubling crystal is this area crystal, for example ktp crystal, lbo crystal or bbo crystal commonly used.
The method of work of excited Raman laser of the present invention, as one of following:
A, the Raman crystal external cavity type Raman frequency shift laser outside laserresonator is used nanosecond, and psec or femtosecond pulse laser adopt single-pass, bilateral or many logical modes to A as pumping source 2RM 2O 8Raman crystal excites, and obtains pulsed excited Raman Laser output.As Figure 1-3.
Perhaps
Formula frequency displacement Raman laser in B, the Raman crystal chamber in laserresonator produces laser L with laser diode pumping laser crystal, and wavelength is 1.06 μ m, 1.34 μ m or 532nm:
I. described laser L passes through A 2RM 2O 8Raman crystal is so that laser generation frequency displacement obtains the excited Raman laser I output of continous way scattering.Further, this excited Raman laser I is obtained the frequency doubled light output of respective wavelength by frequency-doubling crystal.Shown in Fig. 4-5.
Perhaps
The described laser L of ii produces pulse laser by electric light, acousto-optic or the modulation of passive Q-adjusted original paper, passes through A again 2RM 2O 8Raman crystal obtains the excited Raman laser I output of pulsed scattering.Further, this excited Raman laser I is obtained the frequency doubled light output of respective wavelength by frequency-doubling crystal.Shown in Fig. 6-7.
Described excited Raman laser I wavelength comprises 1172nm, 1.5 μ m, 587nm or 558nm.
The above-mentioned muirite structure Raman crystal of the present invention adopts the melt czochralski method to make, and the preparation method is described as follows.
A 2RM 2O 8The preparation method of crystal is with ACO 3, RO 2And MO 2Be raw material, reaction equation is: 2ACO 3+ RO 2+ 2MO 2=A 2RM 2O 8+ 2CO 2↑, A=Ca wherein, Sr or Ba; R=Ti or V; M=Si or Ge.Adopt the melt czochralski method to carry out the crystal growth, crystal growth step comprises:
(1) substantially according to A 2TiM 2O 8The molar ratio weighing raw material of each component and mixing briquetting in the formula are placed in the platinum crucible at 700～1300 ° of C sintering, and insulation 10-15h gets polycrystal material.
(2) polycrystal material is placed in the platinum crucible, be warmed up to 800～1500 ° of C and make the polycrystal material fusing; Lower seed crystal, crystal growth temperature are between 800～1500 ° of C, and the pull rate of crystal growth is 0.5～2 millimeter/hour, 10～30 rev/mins of rotating speeds.
(3) the complete room temperature that is cooled to of crystal growth; Long good crystal is annealed in annealing furnace, and annealing temperature is at 650～1000 ° of C, and annealing atmosphere is air.
In the above-mentioned steps (2) pull rate of preferred crystal growth be the 0.6-1.5 millimeter/hour, rotating speed 15-20 rev/min.
For making solid phase reaction complete, seed crystal is descended in rear constant temperature 2-10 hour of preferred polycrystal material fusing again in the above-mentioned steps (2).
In the above-mentioned steps (3) for preventing crystal cleavage, preferably with the crystal slow cooling to room temperature.20 ° of rate of temperature fall C/ hour.
The crystal growth cycle can be decided the needs of Raman crystal size according to laser in the above-mentioned steps (2), in general can obtain the approximately crystal of 35mm * 35mm * 50mm of size in 5-15 days.
At last the crystal of gained is processed processing, polishing, in order to prepare quartz crystal device.
A of the present invention 2RM 2O 8The used grower of the preparation of crystal is induction heating pull-type single crystal growing furnace, this area conventional equipment (as shown in Figure 9).
The core of such laser is preferably to adopt muirite structure Raman crystal, this muirite structure Raman crystal fusing point does not have phase transformation between room temperature, have that physical and mechanical properties is stable, Raman gain coefficienct is high, the advantage such as deliquescence, available Czochralski grown large-size crystals not, such laser has the advantages such as stable output, simple in structure, environmental suitability is strong, so that have the prospect of industrialization extensive use based on the laser of muirite structure crystal.
Description of drawings
Fig. 1 is based on single through type Raman laser structure figure outside the chamber of muirite structure Raman crystal, among the figure, and 1, pulse laser, 2, Raman crystal.
Fig. 2 is based on two through type Raman laser structure figure outside the chamber of muirite structure Raman crystal, among the figure, and 1, pulse laser, 2, Raman crystal, 3, input mirror, 4, concave output mirror.
Fig. 3 is based on Multiple through then out formula Raman laser structure figure outside the chamber of muirite structure Raman crystal, among the figure, and 1, pulse laser, 2, Raman crystal, 3, input mirror, 5, flat output mirror.
Fig. 4 is based on the structure chart of formula continuous Raman laser in the chamber of muirite structure Raman crystal, among the figure, and 2, Raman crystal, 3, input mirror, 5, flat output mirror, 6, pumping source, 7, optical coupling system, 8, solid laser medium.
Fig. 5 is based on formula continuous Raman frequency double laser structure chart in the chamber of muirite structure Raman crystal, among the figure, and 2, Raman crystal, 3, input mirror, 5, outgoing mirror 6, pumping source, 7, optical coupling system, 8, solid laser medium, 9, frequency-doubling crystal.
Fig. 6 is based on formula pulse Raman laser structure figure in the chamber of muirite structure Raman crystal, among the figure, and 2, Raman crystal, 3, input mirror, 5, outgoing mirror 6, pumping source, 7, optical coupling system, 8, solid laser medium, 10, acoustooptic switch.
Fig. 7 is based on formula pulse Raman frequency doubling laser structure figure in the chamber of muirite structure Raman crystal, among the figure, and 2, Raman crystal, 3, input mirror, 5, outgoing mirror, 6, pumping source, 7, optical coupling system, 8, solid laser medium, 9, frequency-doubling crystal, 10, acoustooptic switch.
Fig. 8 is based on single through type laser Raman spectrum outside the chamber of muirite structure Raman crystal, λ fBe pump light, S 1Be one-level Stokes light, S 2Be secondary Stokes light.
Fig. 9 crystal growing apparatus schematic diagram.Among the figure, 11, high frequency coil, 12, platinum crucible, 13, melt, 14, seed crystal.
Embodiment
The present invention will be further described below in conjunction with drawings and Examples, and these drawings and Examples only are used for explanation the present invention, are not limited to this.
Embodiment 1:Ba 2TiSi 2O 8Single through type Raman laser outside the chamber of Raman crystal.
Structure as shown in Figure 1, this laser is comprised of pulse laser 1 and Raman crystal 2.Pulse laser 1 is used flash lamp pumping, carries out the picosecond pulse laser device that dual modulation forms with acousto-optic modulator and dyestuff saturable absorption material, and its output wavelength is that 532nm, pulsewidth 30ps, repetition rate are the pulse laser of 10Hz; Pass through again Ba 2TiSi 2O 8Raman crystal produces excited Raman light.Fig. 8 is the output laser Raman spectrum figure of this laser, obviously can see the secondary raman laser output of one-level raman laser and the 587nm of 558nm from figure.
Described Raman crystal 2 is Ba 2TiSi 2O 8Crystal, it is of a size of 5 * 5 * 25mm 3, logical light face is 5 * 5mm 2, its twin polishing is plated film not.
Ba 2TiSi 2O 8The crystal preparation method:
Reaction equation: 2BaCO 3+ TiO 2+ 2SiO 2=Ba 2TiSi 2O 8+ 2CO 2↑
The initial feed that the present embodiment adopts is BaCO 3, TiO 2And SiO 2, press Ba 2TiSi 2O 8The stoichiometric proportion raw materials weighing, mixing, briquetting is put into platinum crucible at 1000～1300 ° of C sintering, constant temperature 12h obtains the Ba that grows 2TiSi 2O 8The polycrystal material of crystal.With Ba 2TiSi 2O 8Polycrystal material is put into platinum crucible, and platinum crucible is placed the single crystal pulling stove, adopts the mode of Frequency Induction Heating, is warmed up to the above uniform temperature of fusing point, constant temperature a period of time; Use the Ba of c direction 2TiSi 2O 8Seed crystal is lowered to seed crystal near reducing the temperature to fusing point, and through receiving neck, shouldering, isodiametric growth, growth temperature is 1400～1500 ° of C, 0.5～2 millimeter/hour of pull rate, 10～30 rev/mins of rotary speeies.Cool to room temperature with 10～30 degrees centigrade/hour after the crystal growth is complete.With the thermal stress that the crystal of growing places resistance furnace annealing to produce to eliminate crystal growing process, annealing temperature is 1000 ° of C, and annealing time is 20h.Then as required the crystal of growing is processed, polished.Cut direction is along the crystallographic axis c-axis.
Embodiment 2:Ca 2TiSi 2O 8Two through type Raman lasers outside the chamber of crystal.
Structure as shown in Figure 2, this laser is by pulse laser 1, input mirror 3, Raman crystal 2 and concave output mirror 4 are arranged in order along light path.The laser of pulse laser 1 output wavelength 532nm, pulsewidth 30ps, repetition rate 10Hz.Input mirror 3 plating take to the transmitance of incident light 532nm as greater than 99%, to the reflectivity of raman laser 558nm as greater than 99% deielectric-coating.Outgoing mirror 4 plating take to the reflectivity of incident light 532nm as greater than 99%, be deielectric-coating greater than 99% to the transmitance of Raman light 558nm.
Identical among described pulse laser 1 and the embodiment 1.
Described Raman crystal 3 is Ca 2TiSi 2O 8Crystal is the cylinder of length 35mm.Logical light face is disc, and its twin polishing and plating are with to 532 and the deielectric-coating of 558nm high transmission.Ca 2TiSi 2O 8The preparation of crystal by adopting czochralski method, initial feed is CaCO 3, TiO 2And SiO 2, Ba among all the other steps and the embodiment 1 2TiSi 2O 8The crystal preparation method is basic identical.
Described input mirror and outgoing mirror are concave mirror, and radius of curvature all is 100mm.
Strengthen incident laser power, can obtain to be output as the stimulated Raman scattering light of 558nm.
Embodiment 3:Sr 2TiSi 2O 8Multiple through then out formula Raman laser outside the chamber of crystal.
Structure as shown in Figure 3, this laser is by pulse laser 1, input mirror 3, Raman crystal 2 and outgoing mirror 5 are arranged in order composition along light path.Input mirror 3 concave surfaces are 45 ° of angles towards pulse laser 1, its plane and laser direction, and Raman crystal 2 and outgoing mirror 5 are positioned on the input mirror 3 catoptrical light paths.
Described pulse laser 1 output wavelength is 532nm, pulsewidth 30ps, and repetition rate is the pulse laser of 10Hz.Input mirror 3 plating with to the fundamental frequency light transmission rate greater than 99% and Raman light (558nm) reflectivity greater than 99% deielectric-coating, outgoing mirror 5 be level crossing, the two sides plate with to the fundamental frequency light reflectivity greater than 99%, to Raman light (558nm) transmitance greater than 99% deielectric-coating.Described input mirror 3 concave curvature radiuses are 200mm.
Identical among described pulse laser 1 and the embodiment 1.
Described Raman crystal 3 is Sr 2TiSi 2O 8Crystal, it is of a size of 5 * 5 * 15mm 3, logical light face is 5 * 5mm 2, its twin polishing is plated film not.Sr 2TiSi 2O 8The preparation of crystal by adopting czochralski method, initial feed is SrCO 3, TiO 2And SiO 2, Ba among all the other steps and the embodiment 1 2TiSi 2O 8The crystal preparation method is basic identical.
Strengthen incident laser power, can realize the output of 558nm raman laser.
Embodiment 4:Ba 2TiGe 2O 8Formula continuous Raman laser in the chamber of crystal.
Structure as shown in Figure 4, this laser is formed along light path is arranged sequentially by pumping source 6, optical coupling system 7, input mirror 3, solid laser medium 8, Raman crystal 2 and flat output mirror 5.This solid laser medium 8 is Nd:YAG crystal, on its two logical light end faces plating with to pump light (808nm) and fundamental frequency light (1064nm) transmitance greater than 99% anti-reflection film.Raman crystal 2 is Ba 2TiGe 2O 8Crystal, plating is with to 1064 and the deielectric-coating of 1172nm high transmission on its two logical light end face.Input mirror 3 plating with to pump light (808nm) transmitance greater than 99%, to fundamental frequency light (1064nm) and Raman light (1172nm) reflectivity greater than 99% deielectric-coating; Outgoing mirror 5 plated surfaces with to fundamental frequency light (1064nm) reflectivity greater than 99%, be 10% deielectric-coating to Raman light (1172nm) transmitance.
Described pumping source 6 is that output wavelength is the semiconductor laser diode of the InGaAs of 808nm.
Described input mirror 3 is that curvature is the concave mirror of 200mm, and outgoing mirror 5 is level crossings.
Described solid laser medium 4 is Nd:YAG crystal, and the doping content of neodymium is 0.5at.%, and the Nd:YAG crystal is cuboid, and length is 6mm.
Described Raman crystal 5 is Ba 2TiGe 2O 8Crystal, logical light face 2 * 5mm 2, the cuboid of length 30mm, on its two logical light end face plating with to 1064nm and 1172nm transmitance greater than 99% deielectric-coating.Ba 2TiGe 2O 8The preparation of crystal by adopting czochralski method, initial feed is BaCO 3, TiO 2And GeO 2, all the other steps are with Ba among the embodiment 1 2TiSi 2O 8The crystal preparation method.
The present embodiment is simple in structure, and is easy to operate.Realized the continuous laser output that 1172nm is stable.
Embodiment 5:Ba 2VSi 2O 8Formula continuous Raman frequency double laser in the chamber of crystal
Structure as shown in Figure 5, this laser is by pumping source 6, optical coupling system 7, input mirror 3, solid laser medium 8, Raman crystal 2, frequency-doubling crystal 9 and outgoing mirror 5 are arranged along light path successively order.Input mirror 3 plating with to pump light (808nm) transmitance greater than 99%, to fundamental frequency light (1064nm), Raman light (1172nm) and Raman frequency doubling light (586nm) reflectivity greater than 99% deielectric-coating.The inboard plating of outgoing mirror 5 with to fundamental frequency light (1064nm), Raman light (1172nm) reflectivity greater than 99%, Raman frequency doubling light (586nm) transmitance is greater than 99% deielectric-coating, outside plating with to Raman frequency doubling light (586nm) transmitance greater than 99% deielectric-coating.
Described pumping source 6 is that output wavelength is the semiconductor laser diode of the InGaAs of 808nm.
Described input mirror 3 is that curvature is the concave mirror of 800mm, and outgoing mirror 5 is level crossings.Identical among described solid laser medium 8 and Raman crystal 2 sizes and the embodiment 5, selected Raman crystal is Sr 2VSi 2O 8Crystal.
Described frequency-doubling crystal 10 is lbo crystal, is cuboid, and it is of a size of 3 * 3 * 15mm 3, logical light face is 5 * 5mm 2, polishing both surfaces and plating are with the deielectric-coating to 586nm, 1064nm and 1172nm high transmission.Strengthen pump power, can realize the continuous stimulated Raman scattering light output that 1172nm is stable.
Ba 2VSi 2O 8The preparation method of crystal:
Ba 2VSi 2O 8The crystal preparation method:
Reaction equation: 2BaCO 3+ VO 2+ 2SiO 2=Ba 2VSi 2O 8+ 2CO 2↑
The initial feed that the present embodiment adopts is BaCO 3, VO 2And SiO 2, press Ba 2VSi 2O 8The stoichiometric proportion raw materials weighing, mixing, briquetting is put into platinum crucible at 900～1200 ° of C sintering, constant temperature 12h obtains the Ba that grows 2VSi 2O 8The polycrystal material of crystal.With Ba 2VSi 2O 8Polycrystal material is put into platinum crucible, and platinum crucible is placed the single crystal pulling stove, adopts the mode of Frequency Induction Heating, is warmed up to the above uniform temperature of fusing point, constant temperature a period of time; Be lowered to seed crystal near reducing the temperature to fusing point, use the Ba of c direction 2VSi 2O 8Seed crystal, through receiving neck, shouldering, isodiametric growth, growth temperature is 1300～1500 ° of C, 0.5～2 millimeter/hour of pull rate, 10～30 rev/mins of rotary speeies.Cool to room temperature with 10～30 degrees centigrade/hour after the crystal growth is complete.With the thermal stress that the crystal of growing places resistance furnace annealing to produce to eliminate crystal growing process, annealing temperature is 1000 ° of C, and annealing time is 20h.Then as required the crystal of growing is processed, polished.Cut direction is along the crystallographic axis c-axis.
Embodiment 6:Ca 2TiGe 2O 8Formula pulse Raman laser in the chamber of crystal
Structure as shown in Figure 6, this laser is by pumping source 6, optical coupling system 7, input mirror 3, solid laser medium 8, acousto-optic Q modulation switch 10, Raman crystal 2 and outgoing mirror 5 are arranged sequentially along light path.3 platings of its input mirror are with to pump light (808nm) high transmission and to 1064nm laser high transmission, to the high reflection of 1.34 μ m laser, to the deielectric-coating of the high reflection of Raman light (1.5 μ m), and outgoing mirror 5 platings are to see through 5% deielectric-coating to 1064nm laser high transmission and to the high reflection of 1.34 μ m laser, to 1.5 μ m laser.This solid laser medium 8 is Nd:YAG crystal, on its two logical light end faces plating with pump light (808nm) and fundamental frequency light (1.34 μ m) transmitance greater than 99% anti-reflection film.
Described pumping source 6 is that output wavelength is the semiconductor laser diode of the InGaAs of 808nm.
Described input mirror 3 is that curvature is the concave mirror of 500mm, and outgoing mirror 5 is level crossings.
Described solid laser medium 8 is Nd:YAG crystal, and the doping content of neodymium is 0.5at.%, and the Nd:YAG crystal is cuboid, and length is 6mm.
The modulation frequency range of described acousto-optic Q modulation switch 10 is 100Hz-100KHz.
Described Raman crystal 2 is Ca 2TiGe 2O 8Crystal is of a size of 5 * 5 * 25mm 3, logical light face is 5 * 5mm 2, its twin polishing is plated film not.
Strengthen pump power, can realize 1.5 μ m stimulated Raman scattering Laser outputs.
Ca 2TiGe 2O 8The preparation of crystal by adopting czochralski method, initial feed is CaCO 3, TiO 2And GeO 2, all the other steps are with Ba among the embodiment 1 2TiSi 2O 8The crystal preparation method.
Embodiment 7:Ba 2VGe 2O 8Formula pulse Raman frequency doubling laser in the chamber of crystal
Structure as shown in Figure 7, this laser is by pumping source 6, optical coupling system 7, input mirror 3, solid laser medium 8, acousto-optic Q modulation switch 10, Raman crystal 2, frequency-doubling crystal 9 and outgoing mirror 5 are arranged sequentially along light path.The plated film situation of input mirror 3 and outgoing mirror 5 is identical with the plated film situation of input mirror 3 and outgoing mirror 5 among the embodiment 4 respectively.Corresponding identical among Raman crystal 2 sizes, solid laser medium 8 and frequency-doubling crystal 9 and the embodiment 5, selected Raman crystal is Ba 2VGe 2O 8Crystal.
Described pumping source 6 is that output wavelength is the semiconductor laser diode of the InGaAs of 808nm.
Described input mirror 3 is that curvature is the concave mirror of 200mm, and outgoing mirror 8 is level crossings.
The modulation frequency range of described acousto-optic Q modulation switch 9 is 100Hz-100KHz.
Strengthen pump power, can realize 587nm stimulated Raman scattering Laser output.
Ba 2VSi 2O 8Ba among the preparation of crystal and the embodiment 5 2VSi 2O 8The crystal preparation process is identical, and difference is that initial feed is SrCO 3, VO 2And GeO 2

Claims (10)

1. an excited Raman laser comprises pumping source, laserresonator and Raman crystal, it is characterized in that adopting the Raman crystal of muirite structure that optical maser wavelength is regulated, and produces the Laser output with fixedly frequency displacement; The Raman crystal general formula of described muirite structure is:
A 2RM 2O 8, A=Ca wherein, Sr or Ba; R=Ti or V; M=Si or Ge.
2. excited Raman laser as claimed in claim 1 is characterized in that described Raman crystal is positioned at laserresonator and forms external cavity type Raman frequency shift laser outward; Or Raman crystal is positioned at laserresonator and forms inner chamber Raman frequency shift laser device, and laserresonator is made of input mirror and outgoing mirror.
3. excited Raman laser as claimed in claim 2 is characterized in that described external cavity type Raman frequency shift laser is Multiple through then out formula Raman laser outside two through type Raman lasers or the chamber outside single through type Raman laser, the chamber outside the chamber; Wherein:
Single through type Raman laser is made of pulse laser and Raman crystal successively outside the chamber;
Outside the chamber two times by Raman lasers successively by pulse laser, input mirror, Raman crystal and concave output mirror consist of;
Outside the chamber two times by Raman lasers successively by pulse laser, input mirror, Raman crystal and outgoing mirror consist of.
4. excited Raman laser as claimed in claim 2 is characterized in that described inner chamber Raman frequency shift laser device is the continuous excited Raman frequency double laser of intracavity continuous Raman laser, intracavity, intracavity pulse Raman laser or the continuous excited Raman frequency double laser of intracavity; Wherein:
The intracavity continuous Raman laser is made of pumping source, optical coupling system, input mirror, solid laser medium, Raman crystal and flat output mirror successively;
The continuous excited Raman frequency double laser of intracavity is made of pumping source, optical coupling system, input mirror, solid laser medium, Raman crystal, frequency-doubling crystal and outgoing mirror successively;
Intracavity pulse Raman laser is made of pumping source, optical coupling system, input mirror, solid laser medium, acousto-optic Q modulation switch, Raman crystal and outgoing mirror successively;
The continuous excited Raman frequency double laser of intracavity is successively by pumping source, optical coupling system, input mirror, solid laser medium, acousto-optic Q modulation switch, and Raman crystal and outgoing mirror consist of.
5. such as claim 1 or 2 or 3 described excited Raman lasers, it is characterized in that Raman crystal is Ba 2TiSi 2O 8Or Ba 2TiGe 2O 8
6. such as claim 1 or 2 or 3 described excited Raman lasers, it is characterized in that the logical light face of preferred Raman crystal is circle or rectangle, Raman crystal length is 0.5-50mm, preferred 10-35mm.
7. such as the method for work of each described excited Raman laser of claim 1 ~ 6, for one of following:
A, the Raman crystal external cavity type Raman frequency shift laser outside laserresonator is used nanosecond, and psec or femtosecond pulse laser adopt single-pass, bilateral or many logical modes to A as pumping source 2RM 2O 8Raman crystal excites, and obtains pulsed excited Raman Laser output;
Perhaps
B, the Raman crystal intracavity frequency displacement Raman laser in laserresonator produces laser L with laser diode pumping laser crystal, and wavelength is 1.06 μ m, 1.34 μ m or 532nm:
I. described laser L passes through A 2RM 2O 8Raman crystal is so that laser generation frequency displacement obtains the excited Raman laser I output of continous way scattering.Further, this excited Raman laser I is obtained the frequency doubled light output of respective wavelength by frequency-doubling crystal;
Perhaps
The described laser L of ii produces pulse laser by electric light, acousto-optic or the modulation of passive Q-adjusted original paper, passes through A again 2RM 2O 8Raman crystal obtains the excited Raman laser I output of pulsed scattering; Further, this excited Raman laser I is obtained the frequency doubled light output of respective wavelength by frequency-doubling crystal.
8. A 2RM 2O 8The preparation method of crystal is with ACO 3, RO 2And MO 2Be raw material, reaction equation is: 2ACO 3+ RO 2+ 2MO 2=Ba 2RM 2O 8+ 2CO 2↑, A=Ca wherein, Sr or Ba; R=Ti or V; M=Si or Ge; Adopt the melt czochralski method to carry out the crystal growth, crystal growth step comprises:
(1) substantially according to A 2TiM 2O 8The molar ratio weighing raw material of each component and mixing briquetting in the formula are placed in the platinum crucible at 700～1300 ° of C sintering, and insulation 10-15h gets polycrystal material;
(2) polycrystal material is placed in the platinum crucible, be warmed up to 800～1500 ° of C and make the polycrystal material fusing; Lower seed crystal, crystal growth temperature are between 800～1500 ° of C, and the pull rate of crystal growth is 0.5～2 millimeter/hour, 10～30 rev/mins of rotating speeds;
(3) the complete room temperature that is cooled to of crystal growth; Long good crystal is annealed in annealing furnace, and annealing temperature is at 650～1000 ° of C, and annealing atmosphere is air.
9. A as claimed in claim 8 2RM 2O 8The preparation method of crystal, the pull rate that it is characterized in that crystal growth in the step (2) be the 0.6-1.5 millimeter/hour, rotating speed 15-20 rev/min.
10. A as claimed in claim 8 2RM 2O 8The preparation method of crystal is characterized in that polycrystal material melted rear constant temperature 2-10 hour in the step (2), descends seed crystal again.
CN201210488424.8A 2012-11-26 2012-11-26 Raman laser based on crystalline in fresnoite structure Active CN102946048B (en)

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CN104568897A (en) * 2013-10-29 2015-04-29 苏州拉曼检测技术有限公司 Raman spectrum enhancement device, raman spectrum enhancement system and raman spectrum enhancement method based on external resonant cavity technology
CN105226498A (en) * 2015-11-07 2016-01-06 山东大学 A kind of dual laser based on two stimulated Raman scattering medium
CN105390931A (en) * 2015-12-21 2016-03-09 山东省科学院新材料研究所 All-solid Raman laser based on calcite type orthoborate crystal
CN106923781A (en) * 2017-03-28 2017-07-07 戎创前沿科技(北京)有限公司 A kind of Raman Gastroscope Diagnosis instrument
CN107033890A (en) * 2017-05-12 2017-08-11 井冈山大学 A kind of plant LED fluorophor and its synthetic method
CN107604438A (en) * 2017-09-28 2018-01-19 中国科学院理化技术研究所 Purposes of the Firebrake ZB crystal in Raman crystal
CN108173114A (en) * 2016-12-07 2018-06-15 中国科学院大连化学物理研究所 A kind of miniaturization Ramar laser
CN108277522A (en) * 2018-01-16 2018-07-13 中国科学院合肥物质科学研究院 A kind of preparation method and applications of low-temperature phase germanic acid crystal of barium
CN108365515A (en) * 2018-03-26 2018-08-03 山东大学 A kind of single-ended pumped high-power burst pulse basic mode laser and its working method

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CN104568897A (en) * 2013-10-29 2015-04-29 苏州拉曼检测技术有限公司 Raman spectrum enhancement device, raman spectrum enhancement system and raman spectrum enhancement method based on external resonant cavity technology
CN104348081A (en) * 2014-11-25 2015-02-11 山东大学 Application of Ca3(BO3)2 crystal stimulated Raman scattering
CN105226498A (en) * 2015-11-07 2016-01-06 山东大学 A kind of dual laser based on two stimulated Raman scattering medium
CN105390931A (en) * 2015-12-21 2016-03-09 山东省科学院新材料研究所 All-solid Raman laser based on calcite type orthoborate crystal
CN105390931B (en) * 2015-12-21 2018-08-07 山东省科学院新材料研究所 A kind of full-solid state Raman laser based on calcite type orthoborate crystal
CN108173114A (en) * 2016-12-07 2018-06-15 中国科学院大连化学物理研究所 A kind of miniaturization Ramar laser
CN106923781A (en) * 2017-03-28 2017-07-07 戎创前沿科技(北京)有限公司 A kind of Raman Gastroscope Diagnosis instrument
CN107033890A (en) * 2017-05-12 2017-08-11 井冈山大学 A kind of plant LED fluorophor and its synthetic method
CN107033890B (en) * 2017-05-12 2019-06-28 井冈山大学 A kind of plant LED light fluorophor and its synthetic method
CN107604438A (en) * 2017-09-28 2018-01-19 中国科学院理化技术研究所 Purposes of the Firebrake ZB crystal in Raman crystal
CN108277522A (en) * 2018-01-16 2018-07-13 中国科学院合肥物质科学研究院 A kind of preparation method and applications of low-temperature phase germanic acid crystal of barium
CN108365515A (en) * 2018-03-26 2018-08-03 山东大学 A kind of single-ended pumped high-power burst pulse basic mode laser and its working method

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