CN102944124B - Water-cooling heat-dissipating device of semiconductor temperature differential power generation system - Google Patents
Water-cooling heat-dissipating device of semiconductor temperature differential power generation system Download PDFInfo
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- CN102944124B CN102944124B CN201210474740.XA CN201210474740A CN102944124B CN 102944124 B CN102944124 B CN 102944124B CN 201210474740 A CN201210474740 A CN 201210474740A CN 102944124 B CN102944124 B CN 102944124B
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Abstract
The invention discloses a water-cooling heat-dissipating device of a semiconductor temperature differential power generation system. The constant and continuous generating effects cannot be kept in the prior art. An annular water trough is hollow and is assembled on an outer wall of a rotating barrel in a surrounded mode, and an annular opening is arranged at the position in the middle of the outer ring surface of the annular water trough. A spray head is arranged over the annular opening of the annular water trough and extends into the annular opening, and a water receiving port of the spray head is connected with a water pump through a water pipe and a spiral heat-dissipating water pipe. The water pump is inserted into a water box through an arc-shaped conduit, the water box is located under the annular water trough, and the upper end of the water box is open. When the rotating barrel rolls to drive the annular water trough to roll, the annular water trough and the spray head are not contacted with each other. An annular groove is arranged in the middle of the outer surface of an inner ring of the annular water trough. The water-cooling heat-dissipating device is simple in structure and low in manufacturing cost, runs stably and reliably, and is environment-friendly, pollution-free and convenient to maintain and maintain.
Description
Technical field
The invention belongs to the cooling device of thermoelectricity conversion art, be specifically related to a kind of water-cooling heat radiating device of semiconductor temperature difference power generating system.
Background technology
Semiconductor temperature differential generating technology be a kind of direct based on Seebeck effect (namely the abutting end of two kinds of semiconductors is placed in high temperature, the other end being in low temperature environment just can obtain electromotive force E) be the environmental protection generation technology of electric energy by thermal energy.It can Appropriate application low grade heat energy, and such as geothermal energy, solar energy and industrial exhaust heat used heat etc., by thermoelectric material, be converted into electric energy by heat energy.Different from main flow generation mode, it is without the discharge of discarded object, noiseless, safe and reliable stable, is the recycling to heat energy.
The temperature difference and the radiating mode thereof on the efficiency of semiconductor temperature differential generating and the performance of semiconductor thermoelectric module, semiconductor cold-hot two sides are relevant.Experiment shows: (1) power output increases with the temperature difference and increases, and the temperature difference is larger, and this trend is obvious, and the temperature difference reaches peak power output also will reach maximum; (2) under identical hot-side temperature condition, the rising of cold junction temperature will cause the reduction of power output, and when the temperature difference is identical, cold junction temperature is lower, and its power output is larger.At present, thermo-electric generation needs one of the key issue solved to be exactly the heat dissipation problem of cold junction.Generally, heat energy can make cold junction temperature rise by heat transfer, thus cause the cold and hot two sides temperature difference to decline, affect generating efficiency, good radiating mode can make the temperature kept stable of module cold junction, therefore select suitable heat abstractor, reduce cold junction temperature as much as possible and just become one of main method improving generating efficiency.
There is the thermo-electric generation product of more maturation at present abroad, also had many relevant application studies.But the domestic research carried out in thermo-electric generation is also in the starting stage, also has larger gap, compare shortcoming in the research of semiconductor thermo-electric generation apparatus comprehensive Design and application aspect with external, therefore studying thermo-electric generation has very real meaning.
Along with the research and development of high performance semi-conductor thermoelectric material, semiconductor temperature differential generating technology will be used widely at other field.How to design an effective heat abstractor, make the temperature difference that the cold and hot two sides of semi-conductor thermoelectric material keeps higher and stable, to reach the stable generating effect continued, the aspect such as system is run reliably and with long-term is that semiconductor temperature differential generating transforms technical barrier urgently to be resolved hurrily to practical application.What high-temperature explosion-proof converter in the market utilized waste heat to carry out thermo-electric generation is not also a lot, and difficulty is the temperature difference how keeping the cold and hot two sides of thermo-electric generation sheet.Due under industrial environment, the cold junction of semiconductor temperature difference sheet very soon by hot side or hot environment the heat that passes to heat, make the temperature of cold junction increase, the constant lasting generating effect that therefore cannot keep.
The main heat sink mode of current cold junction has natural convection air, Forced Air Convection and water circulation to cool three kinds.Natural convection air effect is too poor, only uses under specific occasion; Forced Air Convection refers in semiconductor module cold junction finned, is taken away the heat of module cold junction by air-flow; Water-cooling heat radiating system refers to the heat being taken away thermo-electric conversion module cold junction by cooling water tank, and hydrologic cycle cooling system is generally made up of thermal energy converter, water circulation system, water tank and water pump.
Due to large compared with gas of the unit thermal capacitance of water, therefore water-cooled has better cooling effect than air-cooled, and research shows that the water-cooled coefficient of heat transfer than the large 100-1000 of natural air cooled heat radiation doubly.And adopt water-cooling radiating structure can adapt to the working environment of converter complexity, structure is simple, assembling is easy, production efficiency is high, be easy to safeguard, and the seal of converter is good, its outer surface uses the liquid such as water can't to impact converter internal-response, therefore adopts the scheme of water-cooling heat radiating device.
Summary of the invention
The present invention is directed to the deficiencies in the prior art, propose a kind of water-cooling heat radiating device of semiconductor temperature difference power generating system.
The water-cooling heat radiating device of semiconductor temperature difference power generating system of the present invention comprises shower nozzle, annular water tank, spiral heat dissipation water pipe, water pump, water tank and curved catheter.Annular water tank boring, around being assemblied on the outer wall of rotary barrel, the external annular surface centre position of annular water tank has annular opening.Shower nozzle is arranged on directly over the annular opening of annular water tank, and stretches in annular opening, does not contact with annular opening with the inner surface of annular water tank.The water inlet of shower nozzle is connected by water pipe one end with spiral heat dissipation water pipe, the other end of spiral heat dissipation water pipe is connected with water pump, water pump inserts water tank to water tank bottom by curved catheter, water tank is positioned at immediately below annular water tank, water tank upper end is open, and shower nozzle, spiral heat dissipation water pipe, water pump adopt rigid support to fix, and keeps relative position to fix, when rotary barrel scrolling bands moves annular water tank rolling, annular water tank and shower nozzle do not touch mutually.The mid portion of the interior ring outer surface of annular water tank is provided with annular groove, makes to form an area of space between the bucket wall of annular water tank and rotating cylinder, and the height of annular groove is the height that fin superposes with thermo-electric generation sheet.
Beneficial effect of the present invention: structure is simple, and cost of manufacture is cheap, stable and reliable operation, environment friendly and pollution-free, and is convenient to care and maintenance.
Accompanying drawing explanation
Fig. 1 is system three-dimensional structure diagram of the present invention;
Fig. 2 is axial vertical sectional view of the present invention;
Fig. 3 is side sectional view of the present invention;
Fig. 4 is the partial enlarged drawing of side sectional view of the present invention;
Fig. 5 is the sectional view of water tank of the present invention.
Detailed description of the invention
Hereinafter, specific descriptions realize mode of the present invention with reference to the accompanying drawings.
As shown in Figures 1 to 5, the water-cooling heat radiating device of semiconductor temperature difference power generating system of the present invention comprises shower nozzle 1, annular water tank 2, spiral heat dissipation water pipe 3, water pump 4, water tank 5 and curved catheter 7.Annular water tank 2 boring, around being assemblied on the outer wall of rotary barrel 6, the external annular surface centre position of annular water tank 2 has annular opening.Shower nozzle 1 is arranged on directly over the annular opening of annular water tank 2, and stretches in annular opening, does not contact with the inner surface of annular opening with annular water tank 2.The water inlet of shower nozzle 1 is connected by water pipe one end with spiral heat dissipation water pipe 3, the other end of spiral heat dissipation water pipe 3 is connected with water pump 4, water pump 4 inserts bottom water tank 5 to water tank 5 by curved catheter 7, water tank 5 is positioned at immediately below annular water tank 2, water tank 5 upper end is open, and shower nozzle 1, spiral heat dissipation water pipe 3, water pump 4 adopt rigid support to fix, and keeps relative position to fix, rotary barrel 6 scrolling bands moves annular water tank 2 when rolling, and annular water tank 2 and shower nozzle 1 do not touch mutually.The mid portion of the interior ring outer surface of annular water tank 2 is provided with annular groove 8, makes to form an area of space between the bucket wall of annular water tank and rotating cylinder, and the height of annular groove 8 is the height that fin superposes with thermo-electric generation sheet.
The action of whole system: the water bottom water tank 5 is transported in spiral heat dissipation water pipe 3 by arc suction nozzle 7 by water pump 4, sprayed by the inner surface of shower nozzle 1 to annular water tank 2 after water further cools by spiral heat dissipation water pipe 3, reduce the temperature of annular groove 8 internal difference in temperature generating sheet.Water after sprinkling is because Action of Gravity Field is along diffluence bottom two side direction of annular water tank 2 inner surface, the water flowed into bottom annular water tank 2 falls back in water tank 5, carry out heat exchange with the water in water tank and carry out preliminary cooling, water is drawn back to carry out circulating by water pump 4 again and to be sprayed annular water tank 2 by water again, constantly lowers the temperature to the huyashi-chuuka (cold chinese-style noodles) of thermo-electric generation sheet.Between water pump and shower nozzle, use spiral heat dissipation water pipe, spiral heat dissipation water pipe adopts helical structure, effectively can reduce the temperature of recirculated water.
Claims (1)
1. the water-cooling heat radiating device of a semiconductor temperature difference power generating system, comprise shower nozzle, annular water tank, spiral heat dissipation water pipe, water pump, water tank and curved catheter, it is characterized in that: annular water tank boring, around being assemblied on the outer wall of rotary barrel, the external annular surface centre position of annular water tank has annular opening, shower nozzle is arranged on directly over the annular opening of annular water tank, and stretch in annular opening, do not contact with the inner surface of annular water tank with annular opening, the water inlet of shower nozzle is connected by water pipe one end with spiral heat dissipation water pipe, the other end of spiral heat dissipation water pipe is connected with water pump, water pump inserts water tank to water tank bottom by curved catheter, water tank is positioned at immediately below annular water tank, water tank upper end is open, shower nozzle, spiral heat dissipation water pipe, water pump adopts rigid support to fix, relative position is kept to fix, when rotary barrel scrolling bands moves annular water tank rolling, annular water tank and shower nozzle do not touch mutually, the mid portion of the outer surface of the inner ring of annular water tank is provided with annular groove, make to form an area of space between the bucket wall of annular water tank and rotary barrel, the height of annular groove is the height that fin superposes with thermo-electric generation sheet.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210474740.XA CN102944124B (en) | 2012-11-21 | 2012-11-21 | Water-cooling heat-dissipating device of semiconductor temperature differential power generation system |
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| CN201210474740.XA CN102944124B (en) | 2012-11-21 | 2012-11-21 | Water-cooling heat-dissipating device of semiconductor temperature differential power generation system |
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| CN102944124A CN102944124A (en) | 2013-02-27 |
| CN102944124B true CN102944124B (en) | 2015-05-13 |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103776214A (en) * | 2013-06-26 | 2014-05-07 | 苏州天华有色金属制品有限公司 | Radiating device |
| CN106621438A (en) * | 2016-10-17 | 2017-05-10 | 兰州大学 | Laboratory exhaust purification system |
| CN110138276A (en) * | 2019-04-30 | 2019-08-16 | 罗运山 | Atmospheric temperature difference power generation device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005019903A (en) * | 2003-06-30 | 2005-01-20 | Matsushita Electric Ind Co Ltd | Cooling device of semiconductor device |
| CN101226905A (en) * | 2008-02-15 | 2008-07-23 | 日月光半导体制造股份有限公司 | Semiconductor encapsulation constitution with radiation fin and carrier thereof |
| CN101859737A (en) * | 2009-04-08 | 2010-10-13 | 日月光半导体制造股份有限公司 | Radiating fin and semiconductor packaging structure |
| CN202902918U (en) * | 2012-11-21 | 2013-04-24 | 杭州电子科技大学 | Water-cooling heat-dissipating device for semiconductor power generation system using temperature differences |
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- 2012-11-21 CN CN201210474740.XA patent/CN102944124B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005019903A (en) * | 2003-06-30 | 2005-01-20 | Matsushita Electric Ind Co Ltd | Cooling device of semiconductor device |
| CN101226905A (en) * | 2008-02-15 | 2008-07-23 | 日月光半导体制造股份有限公司 | Semiconductor encapsulation constitution with radiation fin and carrier thereof |
| CN101859737A (en) * | 2009-04-08 | 2010-10-13 | 日月光半导体制造股份有限公司 | Radiating fin and semiconductor packaging structure |
| CN202902918U (en) * | 2012-11-21 | 2013-04-24 | 杭州电子科技大学 | Water-cooling heat-dissipating device for semiconductor power generation system using temperature differences |
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Effective date of registration: 20201216 Address after: Room 3003-1, building 1, Gaode land center, Jianggan District, Hangzhou City, Zhejiang Province Patentee after: Zhejiang Zhiduo Network Technology Co.,Ltd. Address before: 310018 No. 2 street, Xiasha Higher Education Zone, Hangzhou, Zhejiang Patentee before: HANGZHOU DIANZI University Effective date of registration: 20201216 Address after: 314051 3423, floor 3, building 1, No. 608, Chuangye Road, Nanhu street, Nanhu District, Jiaxing City, Zhejiang Province Patentee after: Jiaxing Gonghu New Material Technology Co.,Ltd. Address before: Room 3003-1, building 1, Gaode land center, Jianggan District, Hangzhou City, Zhejiang Province Patentee before: Zhejiang Zhiduo Network Technology Co.,Ltd. |
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Effective date of registration: 20201228 Address after: 224000 building 1-2 (7), 266 Xinye Road, Yancheng City, Jiangsu Province Patentee after: JIANGSU WANHE COATING MACHINE Co.,Ltd. Address before: 314051 3423, floor 3, building 1, No. 608, Chuangye Road, Nanhu street, Nanhu District, Jiaxing City, Zhejiang Province Patentee before: Jiaxing Gonghu New Material Technology Co.,Ltd. |
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