CN102939261A - Diamond tools - Google Patents

Diamond tools Download PDF

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Publication number
CN102939261A
CN102939261A CN2011800272617A CN201180027261A CN102939261A CN 102939261 A CN102939261 A CN 102939261A CN 2011800272617 A CN2011800272617 A CN 2011800272617A CN 201180027261 A CN201180027261 A CN 201180027261A CN 102939261 A CN102939261 A CN 102939261A
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Prior art keywords
diamond
irradiation
arbitrary method
room
tool
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CN2011800272617A
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CN102939261B (en
Inventor
D·J·特维切
S·L·盖根
N·伯金丝
G·A·斯卡司布鲁克
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Element Six Ltd
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Element Six Ltd
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Priority claimed from GBGB1009296.3A external-priority patent/GB201009296D0/en
Priority claimed from GBGB1012807.2A external-priority patent/GB201012807D0/en
Priority claimed from GBGB1012809.8A external-priority patent/GB201012809D0/en
Application filed by Element Six Ltd filed Critical Element Six Ltd
Publication of CN102939261A publication Critical patent/CN102939261A/en
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D99/00—Subject matter not provided for in other groups of this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C01B32/28—After-treatment, e.g. purification, irradiation, separation or recovery
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C23C14/0611—Diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Cutting Tools, Boring Holders, And Turrets (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Mounting, Exchange, And Manufacturing Of Dies (AREA)

Abstract

A method comprises: selecting a diamond material; irradiating the diamond material with electrons to increase toughness and/or wear resistance of the diamond material; and processing the diamond material into one or more diamond tool pieces, wherein the irradiating comprises controlling energy and dosage of irradiation to provide the diamond material with a plurality of isolated vacancy point defects, the isolated vacancy point defects has a concentration in a range 1*1014 to 1*1022 vacancies/cm-3.

Description

Diamond tool
Technical field
The present invention relates to diamond tool and the method for preparing diamond tool.
Background technology
For any application, the user must consider a plurality of factors when selecting tool material.Such factor comprises: the inertia of the working-surface that cost, toughness, wear rate/hardness, machining need such as the ability of cutting edge, useful life longevity and chemical effect that the material that will process is had.
Desirable tool material are not only tool material of hard but also flexible.These two kinds of character of the material that uses during consume is used present on two the orthogonal axles of being everlasting.In brief, wearing and tearing are measuring of the quantity of material that removes of the operation of per unit.Toughness is the measuring of tolerance of material On Crack Propagation.
That continual needs provide is harder, than flexible, stronger and more wear-resisting material.Also continual needs provide comparatively fast, the preparation method of cleaning more accurately and, this means the performance of cost efficiency and improvement.The purpose of certain embodiments of the present invention is some in these needs of at least part of solution.
For cutting, boring, grinding and the polishing tool of a lot of high-quality performances, diamond is selected material.In a lot of industries, comprise various metals, stone and woodworking, in the tool operation solution, use diamond.Example comprises that aviation and automobile making, furniture prepare, quarry, build, dig up mine and holes, mineral are processed and gas industries.
Adamantine hardness properties makes it become best materials with regard to wearing and tearing.Yet, cause with more material such as the steel of toughness are compared faster crack propagation at the limited capacity of diamond viscous deformation under stress under the working temperature of instrument.
Before having improved the persistent trial of diamond relates to the method that changes the formation diamond or is forming material aftertreatment diamond.For example, WO 01/79583 has instructed and has been used for improving the persistence of diamond-type instrument to improve the technique of shock strength and fracture toughness property.This technique relates in the surface with ion implantation diamond-type instrument.Ion implantation is a kind of material engineering technique, by this technique can the ion implantation another kind of solid with material in, thereby change the physical properties of solid.Under normal conditions, with the ion implantation degree of depth to 10 nanometers-1 micron.WO01/79583 has instructed and has seen through the ion implantation of diamond surface to the 0.02 μ m-0.2 μ m degree of depth.Preferred ion comprises chromium, nickel, ruthenium, tantalum, titanium and yttrium.
US 4184079 and GB 1588445 have also instructed by make the method for diamond malleableize to see through diamond surface with the ion bombardment diamond of enough energy.Advise various ions, comprised carbon, nitrogen and hydrogen ion.Describe ion and in diamond lattice, formed the network of dislocation, thereby suppressed adamantine microfissure (microcleavage).The degree of depth that dislocation can be limited to 10 nanometers-1 below the diamond crystal surface micron has also been described, in order to form in its surface hard epidermis.It is considerably less to have instructed ion dose to produce, 10 16-10 18Ion cm -2In the scope, and have 10keV-10MeV, be more preferably less than the energy of 100keV, so that the material that injects by bombardment does not have adverse influence to diamond.Because adamantine ion bombardment causes decrystallized and softening (unless the holding temperature height must be enough to keep crystalline structure) on surface, thereby use at least 500 ℃ temperature during being taught in ion bombardment.
GB 1588418 discloses the technique for the abrasive nature of improving industrial diamond.This technique comprises in the ion implantation diamond surface.For this purpose, carbon and nitrogen ion have been advised.
US 4012300 discloses by making particle stand the method that irradiation changes the fragility of abrasive grain, particularly diamond and cubic boron nitride particle.Proton, neutron and gamma irradiation have been advised, wherein preferred neutron.
WO 2005/088283 does not relate to toughness and/or the wear resistance that improves diamond, is used for surveying the adamantine existence of particle but disclose use irradiation.The method relates to high-energy photon irradiation particle to bring out photon/carbon nuclei reaction.WO 99/48107 also relates to the method for bringing out the carbon nuclei reaction.In WO 99/48107, use high-energy irradiation (16MeV-32MeV) to cause some carbon atoms to the nuclear transmutation of boron, to be formed for the electroactive point of electronic device applications.Instruct preferred use photon and particularly gamma ray to finish high-energy irradiation, but also can finish high-energy irradiation by the irradiation source such as the electronics that use other.
The purpose of certain embodiments of the present invention is to improve toughness and/or the wear resistance of diamond tool.Another purpose of certain embodiments of the present invention is some problems in the problem of avoiding relevant with aforesaid method.
Summary of the invention
According to an aspect of the present invention, provide a kind of method, it comprises:
Select diamond;
With toughness and/or the wear resistance of electron irradiation diamond with the raising diamond; With
Diamond is processed into one or more diamond tool members,
Wherein said irradiation comprises energy and the dosage of controlling irradiation, and so that the diamond with a plurality of isolated rooms point defect to be provided, described isolated room point defect has 1 * 10 14-1 * 10 22Individual room/cm -3Concentration.
Known irradiation and/or annealing diamond material can change its color.Referring to for example EP 0,615 954 A1, EP 0 316 856 and " The Type Classification System ofDiamonds and Its Importance in Gemology ", Gems and Gemology, Vo l.45, No.2, pp96-111,2009.In addition, recognize that from WO 99/48107 high-energy irradiation (16MeV-32MeV) can cause some carbon atoms to the nuclear transmutation of boron, to be formed for the electroactive point of electronic device applications.In addition, also recognize with ion implantation or come irradiation with proton, neutron or gamma irradiation from US4184079, GB1588445, GB 1588418 and US4012300, can change toughness and/or the wearing character of diamond.Yet the inventor does not notice that any prior art shows the remarkable improvement that can cause the diamond tool component performance according to the electron irradiation of embodiment of the present invention.Observe significantly improving of toughness and/or wear resistance.The improvement of the mode that forms with the wearing and tearing slight crack in addition, causes the diamond tool member of embodiment of the present invention that the surface smoothness of improvement is provided.Using the remarkable improvement of the diamond tool component performance of electron irradiation acquisition by the inventor is unexpected and very important effect.
Unexpectedly, find that it is to tend to single carbon atom is pounded out to form isolated room from their crystallographic sites diamond crystal matrix because of the electron irradiation according to certain embodiments of the present invention that electron irradiation gives the such improvement of diamond tool component performance.By contrast, thereby neutron, proton and heavier ion irradiation tend to enough energy carbon atom be pounded out from their crystallographic site other carbon atom on their crystallographic site are pounded out, and cause so-called cascade infringement (cascade damage).This causes the intramatrical defect cluster of diamond crystal and stress/strain zone, and it can be used for suppressing crack propagation and improves toughness.
Although bound by theory not, as if according to the electron irradiation of embodiment of the present invention by from the toughness and/or the wear resistance that improve diamond about neutron, proton and the mechanism different than the above-mentioned mechanism of heavy ion.As if pass through with the room point defect, more especially to isolate in the room point defect introducing diamond lattice structure, electron irradiation can improve toughness and/or wear resistance, and the crackle cessative aspect (stop) in the diamond lattice can be served as in these rooms.
In view of foregoing, in order to form a large amount of such point defects, the irradiation diamond is favourable.Find to use electron irradiation can form the vacancy defect of suitable concn.Electron irradiation can be introduced the room of nearly uniform concentration, and it is minimized to make simultaneously cascade damage the formation of room chain for example.The room point defect can be in neutrality (V 0) and negative charge state (V -).Total vacancy concentration ([V T]=[V 0]+[V -]) can be in following scope: 1 * 10 14-1 * 10 22Individual room/cm -3, 1 * 10 14-1 * 10 21Individual room/cm 3, 1 * 10 14-1 * 10 20Individual room/cm 3, 1 * 10 15-1 * 10 21Cm -3, 5 * 10 15-1 * 10 20Individual room/cm -3, 1 * 10 15-1 * 10 19Individual room/cm 3, 1 * 10 15-1 * 10 18Individual room/cm 3, 1 * 10 15-1 * 10 17Individual room/cm 3, 1 * 10 16-5 * 10 19Individual room/cm -3, or 5 * 10 16-1 * 10 19Individual room/cm -3Or 1 * 10 16-1 * 10 17Individual room/cm 3
For example use the electron irradiation with following dose rate can form the defective of such concentration: 1 * 10 15e -/ cm 2Or larger, 1 * 10 16e -/ cm 2-1 * 10 19e -/ cm 2, 1 * 10 17e -/ cm 2-1 * 10 19e -/ cm 2, or 2 * 10 17e -/ cm 2-1 * 10 19e -/ cm 2Described irradiation can have following energy: 30keV or higher, 0.1MeV-12MeV, 0.5MeV-10MeV or 1MeV-8MeV.According to some embodiment, irradiation preferably is higher than energy and the dose rate that causes the diamond color change.Irradiation keeps below, and can to cause the decrystallized energy of diamond and dose rate also be favourable.Decrystallized mechanical properties to diamond has adverse influence.Usually, irradiation dose is longer, will introduce more vacancy defect.Yet the speed that introduce in the room can change according to the character of parent material.
During the irradiation according to certain embodiments of the present invention, keep the temperature of diamond relatively low.For example, temperature can be: 500 ° of C or lower, 400 ° of C or lower, 300 ° of C or lower, 200 ° of C or lower, 100 ° of C or lower or 50 ° of C or lower.In order to keep drop in temperature, positive cooling diamond material during irradiation.It is favourable keeping temperature relatively low, because the raising of temperature can cause the number density of vacancy defect to reduce.
The method also can comprise the optional step of annealing diamond material except processing by electron irradiation.Before the irradiation steps, during or afterwards or its any combination, can carry out annealing steps.Annealing steps in some applications, can preferably before irradiation, carry out annealing steps, because can cause the minimizing of vacancy defect after the irradiation.Can under 1600 ° of C or higher, 1800 ° of C or higher, 2200 ° of C or higher or 2400 ° of C or higher temperature, anneal.Embodiment of the present invention can comprise the combination of the annealing of irradiation and relative low temperature, or the combination of irradiation and high pressure-temperature annealing.Embodiment has also been considered the irradiation of repeated doses and/or the possibility that repeats to anneal.That is, can carry out more than once annealing and/or irradiation steps.For example, diamond can be annealed, then use electron irradiation, with after annealing.Also can carry out irradiation and annealing steps alternately.Perhaps, after irradiation, can not make at least diamond be exposed to any significant annealing steps.Significant annealing steps means significantly and can change with measuring the annealing steps of material character.
Use for some, the annealing of relative low temperature can be favourable.In use, but the diamond heating, and the soldering of the most methods that the diamond tool member is installed under for example also being included in 900 ℃.Therefore, low-temperature annealing can be useful for the constant performance that guarantees diamond tool member in the use.For example, the low-temperature annealing under the temperature of 1500 ° of C or lower, 1300 ° of C or lower, 1200 ° of C or lower, 1100 ° of C or lower or about 1000 ° of C can be useful for some application.
Can be before being processed to form one or more tool components, during or carry out afterwards irradiation.This processing can relate to processing, grinding, cutting and/or shaping diamond to form one or more diamond tool members, and each tool component has for example blade of working-surface.For example, this processing can comprise one of following object of formation: wear part, sander, wortle, metering stone (gauge stone) and cutter.The method also can comprise one or more diamond tool members are incorporated in one or more instruments and can be before this incorporates step into, during or carry out afterwards irradiation.
The irradiation diamond is favourable before incorporating into material in the instrument, because can reduce the impaired possibility of diamond by the raising of the toughness due to the irradiation and/or wear resistance during incorporating diamond into procedure of processing related in the instrument.In addition, if other parts in the instrument can be damaged by irradiation and irradiation diamond then can avoid this to damage before incorporating into diamond in the instrument.For example, known irradiation can reduce for example toughness of steel of metallic substance.In addition, if before instrument is made with the diamond pre-treatment, then do not need to change by any way the existing manufacturing process that is used to form the instrument that uses diamond.
On the other hand, the irradiation diamond has advantage after diamond being incorporated in the instrument: existing diamond tool can be processed to improve their toughness and/or wear resistance.In addition, can the diamond of the specific part of toughness and/or wear resistance will be needed in the irradiation steering tool to improve.This needing have been avoided irradiation in use can need not to have the diamond of the other parts of the toughness of raising and/or wear resistance.
Except the toughness and/or wear resistance of improving instrument, the raising of adamantine toughness and/or hardness also can allow to process in a different manner diamond.For example, the raising of toughness can allow diamond is machined for the accurately sharper sword of cutting, and during processing or in use do not have the sword cracking or brokenly fall.
Available electron irradiation diamond to 1 μ m or larger, 10 μ m or larger, 100 μ m or larger, 500 μ m or larger or 1mm or the larger degree of depth.Available electron runs through adamantine total thickness and the irradiation diamond.
Also can make diamond be exposed to electron irradiation at material more than a side.For example, can make diamond sheet material on two interareas, all be exposed to obtain the evenly electron irradiation of exposure.Similarly, during irradiation, can make the vibration of a plurality of small-particles, so that particle rolls and accept the electron irradiation appropriateness is exposed uniformly in their surface.The volume that can assist to run through diamond in the rotation of the rotation of the sample during the irradiation or repetition after irradiation obtains irradiation and/or assists to obtain relatively equally distributed point defect.
Certain embodiments of the present invention with respect to an advantage of prior art ion injection method are, embodiment of the present invention can be that cost is effective more.This is because some embodiment provides the bulk treatment of diamond, and is not only surface treatment.Therefore, before diamond being processed into tool component and incorporating into tool component in the instrument, can finish electron irradiation.In addition, can apply bulk treatment to the material members of large volume, and relatively simple processing requirements is only arranged.For example, the diamond member does not need carefulness to be installed on as on certain required direction of a lot of surface treatments.By contrast, the prior art ion injection method need to carry out after diamond processing.This is because the prior art ion injection method is common only in the raising that causes toughness near the diamond surface.Become tool component will remove the treated surface of such material materials processing by for example cutting, be shaped and/or grinding diamond.Another advantage of certain embodiments of the present invention is can reprocess tool component and do not need again processing tool member.Another advantage is can improve by processing obtainable working-surface with the electron irradiation before forming tool component in processing.For example, can be machined for the accurately sharper cutting edge of cutting with having the diamond through electron irradiation that improves toughness, cutting edge is broken to fall or cracking and do not make during processing.Certain embodiments of the present invention are that electron irradiation does not make material " heating " on the radioactivity meaning with another advantage of for example comparing with neutron irradiation.
Diamond according to embodiment of the present invention can be natural diamond or diamond synthesis.Diamond synthesis can form by high pressure-temperature (HPHT) method or by the chemical vapor deposition (CVD) method.Diamond can be monocrystalline, polycrystalline, sand grains (grit), diamond-like carbon (DLC) or composite diamond material and for example is scattered in diamond crystals in metallic matrix (be generally cobalt and be called PCD) or the inorganic matrix (for example silicon carbide and be called diamond or the ScD of skeleton bonding).Diamond can comprise the crystal with following size: 1nm or larger, 100nm or larger, 500nm or larger, 1 micron or larger, 5 microns or larger, 0.5mm or larger, 1mm or larger, 3mm or larger or 10mm or larger.Diamond can comprise one or more crystal and can form and has at least one up to the body of for example 200mm or larger size (for example in polycrystalline diamond stone slab or dome body).The present invention is specially adapted to HPHT and CVD diamond.Yet, also some embodiment can be applied to natural diamond.
According to certain embodiments of the present invention, diamond can be any in Ia type, Ib type, IIa type or the IIb type.Obtained good result for Ib type diamond.Obtained particularly preferred result by irradiation monocrystalline Ib type diamond.
Diamond can have following isolated nitrogen content: 1000ppm or less, 600ppm or less, 300ppm or less, 200ppm or less, 150ppm or less, 50ppm or less, 10ppm or less, 5ppm or less, 1ppm or less, 0.5ppm or less, 0.1ppm or less or 0.01ppm or less.According to some embodiment, can use electron irradiation to improve and can be the more toughness of the low nitrogen content diamond of fragility.Yet, think that the existence of nitrogen is useful and it can be used in combination to improve toughness with electron irradiation.That is, electron irradiation and nitrogen provide flexible more, more wear-resisting material in the mode of compatibility.For the HPHT diamond, use the material with 30-300ppm isolated (single monobasic) nitrogen concentration to obtain good result.Although can suppose similar nitrogen content is required for the CVD diamond, in fact relevant with CVD diamond film other factors can limit nitrogen content.Therefore, in fact for isolated (single monobasic) nitrogen concentration of the preferred 0.08-50ppm of CVD diamond.By contrast, for natural Ia type diamond, the nitrogen content of 200-2000ppm is preferred.This difference may be because nitrogen is present in such natural diamond material with the form of gathering and therefore shows differently from the material through electron irradiation that comprises single replacement nitrogen.
Preferably, the electron irradiation useful life longevity that makes the diamond tool member than life-span of untreated diamond tool member increase by 10% more, preferred 20% or more, more preferably 50% or more.
Except the toughness and/or wear resistance that improve diamond tool, the electron irradiation of embodiment of the present invention is processed also has the bonus effect that preparation has the diamond tool member of how required color.The instrument of particular color is useful, because color also relates to its performance, thereby also gives the color mark of instrument uniqueness of the present invention except performance advantage.Traditionally, the diamond synthesis tool component comprises the diamond that color is yellow usually.By from yellow, most preferably the diamond of deep yellow begin and the diamond of irradiated yellow in order to improve toughness and/or wear resistance, obtained particularly preferred result.Irradiation also can change the color of yellow diamond material.Except irradiation, also can be depending on the accurate type of parent material and whether carry out annealing steps, obtain multiple color.For example, when being subjected to irradiation according to one embodiment of the invention, colourless or subdiaphanous CVD diamond becomes blueness.If be subjected to irradiation and be heated above subsequently about 700 ℃ temperature, then depend on irradiation and anneal, be initially colourless or subdiaphanous CVD diamond and become colourless, orange, brown or pink color.By contrast, when be subjected to irradiation when (depending on dosage) according to one embodiment of the invention, yellow HPHT Ib type diamond becomes green.If be subjected to irradiation and be heated above subsequently about 700 ℃ temperature, then yellow HPHT Ib type diamond becomes redness or purple color (depending on irradiation and annealing).In some cutting is used, find to provide particularly preferred result by the green diamond that irradiation HPHT Ib type diamond obtains.
In addition, for example when surpassing certain temperature and continue the time of certain-length, can change according to the color of the diamond of certain embodiments of the present invention.This colour-change can be used as the indication that quality control indication and/or diamond tool member need to be changed.For example, become redness/purple after at high temperature prolonging use according to the green HPHT Ib type diamond tool member of one embodiment of the invention.This can serve as the diamond tool member need to change and/or whether exist by for example install or manufacturing issue that tool design has due to superheated and whether therefore superheated indication occur.
Description of drawings
In order to understand preferably the present invention and can how to implement the present invention, describe embodiment of the present invention with reference now to accompanying drawing in the mode of only giving an example in order showing, wherein:
Fig. 1 has illustrated and has implemented the basic step related according to the method for one embodiment of the invention;
Fig. 2 has illustrated and has implemented the basic step related according to the method for another embodiment of the invention; With
Fig. 3 has illustrated and has implemented the basic step related according to the method for another embodiment of the invention.
Embodiment
Fig. 1 has illustrated and has implemented the basic step related according to the method for one embodiment of the invention.The diamond 12 that has toughness and/or the wear resistance of raising with electron irradiation diamond 10 with formation.For example use subsequently laser or machinery knives cutting diamond 12 to form one or more diamond tool members 14.Then one or more diamond members 14 are brazed to carrier 16 to form diamond tool.
Fig. 2 has illustrated and has implemented the basic step related according to the method for another embodiment of the invention.For example use laser or machinery knives cutting diamond 20 to form one or more diamond tool members 22.Then the one or more diamond tool members 22 of irradiation are to form the diamond tool member 24 through irradiation.Subsequently one or more diamond tool members 24 through irradiation are brazed to carrier 26 to form diamond tool.
Fig. 3 has illustrated and has implemented the basic step related according to the method for another embodiment of the invention.For example use laser or machinery knives cutting diamond 30 to form one or more diamond tool members 32.Then one or more diamond tool members 32 are brazed to carrier 34 to form diamond tool.The one or more diamond tool members 34 of irradiation are to form the diamond tool member 36 through irradiation subsequently.
Embodiment described in the invention provides and has improved the toughness of the instrument that comprises diamond and/or the method for wear resistance, and the method comprises with the electron irradiation diamond to improve toughness and/or wear resistance.Radiation treatment forms vacancy defect in diamond.
Electron irradiation (for example being less than or equal to 12MeV) is introduced the room with isolated form usually.These rooms can be in neutrality (V 0) and negative charge state (V -).Total vacancy concentration ([V behind the irradiation T]=[V 0]+[V -]) should be preferably in following scope: 1 * 10 14-1 * 10 22Individual room/cm -3, 1 * 10 15-1 * 10 21Individual room/cm -3, 5 * 10 15-1 * 10 20Individual room/cm -3, 1 * 10 16-5 * 10 19Individual room/cm -3, or 5 * 10 16-1 * 10 19Individual room/cm -3Can seek the defect level of optimization with the technique that repeats.But irradiation, test, irradiation material etc. to be to seek the optimization defect level for the specific diamond of the tool component that is used for particular type and tool applications again.
Usually the electron gun that is used in the 0.1MeV-12MeV energy region carries out electron irradiation.Preferred energy is that the room of introducing nearly uniform concentration in the diamond that nitrogen mixes makes cascade damage for example minimized energy of formation of room chain simultaneously.For the result who reports, find that 4.5MeV provides the good compromise between these two factors here.
Factor such as diamond temperature, bundle can, Shu Tongliang even initial adamantine character can affect [the V that produces for fixing experiment irradiator and time T].Usually be used in the sample of installing under envrionment conditions～300K and carry out irradiation, during applying irradiation, only have minimum temperature rising (for example less than 100K).Yet factor can cause the sample heating such as bundle energy and Shu Tongliang.Preferably keep sample as much as possible cold (the even subcooling under 77K is favourable in some cases) and do not damage temperature control and thereby make irradiation time minimized so that high dose rate becomes possibility.This is favourable for business reason.
Can utilize the spectral measurement vacancy concentration.For example, in order to measure the concentration in isolated room, use the cooled with liquid nitrogen sample under 77K, to obtain spectrum, because under this temperature, see the sharp peak at 741nm and 394nm place that is attributable to respectively neutral and electronegative isolated room.Those coefficients that are used for coefficient that the concentration in the isolated room of this specification sheets calculates and are being proposed by G.Davies inPhysica B 273-274 (1999) 15-23 (such as following table 1 detailed description).In table 1, " A " is integral absorption (the meV cm in the zero-phonon transformation line of measuring under 77K -1), uptake factor is with cm -1Meter and photon energy are in meV.Concentration is with cm -3Meter.
Table 1
Defective Scale (calibration)
V - A ND1=(4.8±0.2)x?10 -16[V -]
V 0 A GR1=(1.2±0.3)x?10 -16[V 0]
The diamond that uses in embodiment of the present invention can be natural diamond, HPHT diamond and CVD diamond.To understand, natural diamond, HPHT diamond and CVD diamond have the structure and function characteristic of they self uniqueness, thereby term " natural ", " HPHT " and " CVD " not only mean the formation method of diamond but also mean ad hoc structure and the functional performance of material itself.For example, by dislocation structure, synthetic CVD diamond can clearly be different from the diamond synthesis material that uses the HPHT technology synthetic.In synthetic CVD diamond, dislocation is passed the direction approximately perpendicular to the initial growth surface of base material usually, and namely when base material was (001) base material, dislocation is approximate to be arranged in parallel with [001] direction.In using the synthetic diamond synthesis material of HPHT technology, the dislocation of (be generally close to { surface of 001}) upper forming core is usually＜110 on the surface of seed crystal〉direction grows.Thereby can distinguish this material of two types by for example in X ray phase photo, observing their different dislocation structures.
It is by surveying the existence of inclusion metallic that synthetic CVD diamond can significantly be different from the other method of using the synthetic diamond synthesis material of HPHT technology, such inclusion is included in the synthetic material of HPHT because of synthesis technique, and described inclusion metallic is derived from metal such as iron, cobalt or the nickel etc. as the solvent catalyst metal.These inclusion sizes can change, usually from less than 1 μ m to greater than 100 μ m.Use the larger inclusion of stereoscopic microscope (for example Zeiss DV4) observable in this size range; And the less inclusion of transmitted light observable in this size range in the use metallurgical microscope (for example Zeiss " Axiophot ").
Being used in and providing the another kind of method of remarkable difference between the diamond synthesis by CVD and the preparation of HPHT method is photoluminescence spectra (PL).In the situation of the synthetic material of HPHT, the defective that comprises the atom (such as nickel, cobalt or iron etc.) from the catalyst metal that uses in the synthesis technique (being generally transition metal) often exists and by PL the detection of such defective is shown that significantly this material is synthetic by the HPHT method.
The diamond that uses in embodiment of the present invention can be Ia type, Ib type, IIa type or IIb type.Ia type and Ib type diamond comprise nitrogen.In the Ia type, nitrogen-atoms forms various types of agglomerated defects, and in Ib type diamond, nitrogen-atoms tends to isolate as single contaminant.That Ia type diamond can be is colourless, brown, pink and purple.Natural Ib type diamond can be deep yellow (" faint yellow "), orange, brown or little green.IIa type and IIb type diamond do not comprise nitrogen (strictly speaking, but always have level in some nitrogen I I type diamonds than much lower in the I type diamond).IIa type and the difference of IIb type diamond are that IIb type diamond comprises the boron as impurity.II type diamond is from colourless mazarine, the pink or brown of changing to.Adamantine color is determined by number, type and the distribution of defective in the crystalline structure.If in diamond, there is finely divided metallic particles, then also can introduce color.Lattice defect comprises dislocation, tiny crack, twin boundary, point defect and low-angle boundary.Therefore, for example adamantine color will depend on type and the distribution of type and distribution and other defective such as the dislocation of impurity such as nitrogen and boron.The defective that in diamond, has a lot of dissimilar and groups.For example, the nitrogen defective of Individual existence number of different types, every kind of nitrogen defective has the spectral response curve of himself.
The instrument that forms by embodiment of the present invention can be used for a lot of application, comprises cutting, grinding, polishing, boring and/or wire drawing.Up to now, obtained particularly preferred result for cutting application and wire drawing.
Diamond in the instrument can be configured to a plurality of possible crystalline orientations, comprise 2-point, 3-point and 4-point crystal, it corresponds respectively to { 110}, { 111} and { 100} crystallographic plane.In wire drawing tool, obtained particularly preferred result for 3-point HPHT Ib type diamond with in cutting tool for 2-point HPHT Ib type diamond.Randomly, formed the working-surface of diamond tool member by the diamond of single sector.
According to a kind of setting, with the Ib type HPHT diamond synthesis of electronics irradiated yellow.Use the instrument of for example finding at Isotron plc under 50% sweep length, carrying out electron irradiation 2 hours under 4.5MeV, the 20mA.The total dose that offers sample is 1.95 * 10 18e -/ cm 2The diamond color becomes green.Although material stands of short duration heating steps when material being brazed to carrier with the formation instrument, do not carry out significant annealing steps.
Test is through the diamond of irradiation in cutting application and wire drawing application.Cutting test shows that the diamond through irradiation is better than rough diamond and good more than any other 2-point or 4-point diamond synthetic or natural diamond.The wire drawing test also shows the performance of improving for the material through irradiation.Through the diamond of irradiation in use than the diamond synthesis of standard deteriorated slowly many.In addition, in the material of irradiation, do not observing line and the scratch that in use sometimes in synthetic or natural diamond material, forms.
Also four in fly cutting (fly cutting) is used finish tracking (trail) through the 2-of irradiation point HPHT diamond tool.Use the instrument of for example finding at Isotronplc carrying out electron irradiation 2 hours under 50% sweep length under 4.5MeV, the 20mA, the total dose that offers sample is 1.95 * 10 18e -/ cm 2Application standard soldering (at 900 ℃ of lower 2-3 minutes) is installed to tool component on the standard wolfram varbide handle.They are used for, and fly cutting is used, processing is used for optics of metals application examples such as CO 2The copper of laser mirror and aluminium.Such interruption cutting is particularly preferred test, because there is the impact of repetition at tool component.Compare 50% the improvement of having an appointment through the life tools of the HPHT of irradiation tool component with untreated HPHT diamond.
Arrange according to another, with the colourless or subdiaphanous single-crystal CVD diamond sheet material of electron irradiation to form the material of blueness.This material can be used for for example forming blade.For example can using, laser cuts blade from blank sheet material.Optionally descend the materials of annealing blueness orange to form at about 700 ℃/amber material.
Although illustrated especially and described the present invention with reference to preferred embodiment, it will be appreciated by those skilled in the art that the various changes that to make on form and the details, and do not depart from the scope of the present invention of being determined by appended claim.

Claims (29)

1. method, it comprises:
Select diamond;
With toughness and/or the wear resistance of electron irradiation diamond with the raising diamond; With
Diamond is processed into one or more diamond tool members,
Wherein said irradiation comprises energy and the dosage of controlling irradiation, and so that the diamond with a plurality of isolated rooms point defect to be provided, described isolated room point defect has 1 * 10 14-1 * 10 22Individual room/cm 3Concentration.
2. according to claim 1 method, wherein first being processed, during or carry out afterwards irradiation.
3. according to arbitrary method in front claim, wherein said selection comprises one or more in the following material of selection: natural diamond material, diamond synthesis material, high pressure-temperature (HPHT) diamond, chemical vapor deposition (CVD) diamond, single crystal diamond material, polycrystalline diamond abrasive compact, quasi-diamond carbon material, diamond, Ib type diamond and composite diamond material.
4. according to arbitrary method in front claim, wherein said irradiation comprises irradiation diamond to 1 μ m or larger, 10 μ m or larger, 100 μ m or larger, 500 μ m or larger, 1mm or the larger degree of depth or runs through the degree of depth of the total thickness of diamond.
5. according to arbitrary method in front claim, wherein under 500 ° of C or lower, 400 ° of C or lower, 300 ° of C or lower, 200 ° of C or lower, 100 ° of C or lower or 50 ° of C or lower temperature, carry out irradiation.
6. according to arbitrary method in front claim, also comprise:
Cooling diamond material during irradiation.
7. according to arbitrary method in front claim, wherein said irradiation comprises the irradiation with following energy: 30keV or higher, 0.1MeV-12MeV, 0.5MeV-10MeV or 1MeV-8MeV.
8. according to arbitrary method in front claim, wherein said irradiation comprises the electron irradiation with following dose rate: 1 * 10 15e -/ cm 2Or larger, 1 * 10 16e -/ cm 2-1 * 10 19e -/ cm 2, 1 * 10 17e -/ cm 2-1 * 10 19e -/ cm 2, or 2 * 10 17e -/ cm 2-1 * 10 19e -/ cm 2
9. according to arbitrary method in front claim, wherein isolate the room point defect and have the interior concentration of following scope: 1 * 10 15-1 * 10 21Individual room/cm 3, 5 * 10 15-1 * 10 20Individual room/cm 3, 1 * 10 16-5 * 10 19Individual room/cm 3, or 5 * 10 16-1 * 10 19Individual room/cm 3
10. according to arbitrary method in front claim, wherein said irradiation comprises and is lower than such energy and the irradiation of dose rate: this energy and dose rate can cause diamond decrystallized.
11. according to arbitrary method in front claim, wherein said irradiation comprises and is higher than such energy and dose rate irradiation diamond: this energy and dose rate cause the color change of diamond.
12. according to arbitrary method in front claim, also comprise: this diamond of annealing.
13. method according to claim 12, wherein before the irradiation, during or anneal afterwards.
14. wherein under 1600 ° of C or higher, 1800 ° of C or higher, 2200 ° of C or higher or 2400 ° of C or higher temperature, anneal according to claim 12 or 13 method.
15. each method according to claim 1-11 does not wherein make diamond be exposed to significant annealing steps.
16. according to arbitrary method in front claim, it is one of following that wherein said irradiation comprises:
During with electron irradiation, rotate diamond; Or
With the electron irradiation diamond, rotate diamond and use the electron irradiation diamond.
17. according to arbitrary method in front claim, wherein said processing comprises that the shaping diamond is to form working-surface.
18. according to arbitrary method in front claim, wherein processing comprise form one of following: wear part, sander, wortle, metering stone and cutter.
19. according to arbitrary method in front claim, also comprise:
One or more diamond tool members are incorporated in one or more instruments.
20. method according to claim 19, wherein before incorporating into, during or carry out afterwards irradiation.
21. a tool component, it comprises through electron irradiation with the toughness that improves diamond and/or the diamond of wear resistance, and wherein diamond comprises and has 1 * 10 14-1 * 10 22Individual room/cm -3The isolated room point defect of concentration.
22. tool component according to claim 21, its Vacancy point defect have the concentration in the following scope: 1 * 10 15-1 * 10 21Individual room/cm 3, 5 * 10 15-1 * 10 20Individual room cm -3, 1 * 10 16-5 * 10 19Individual room/cm 3, or 5 * 10 16-1 * 10 19Individual room/cm 3
23. according to claim 21 or 22 tool component, wherein diamond is blue, orange, brown, green, redness or purple.
24. each tool component according to claim 21-23 wherein disposes diamond in use to change color, need to change and/or exist superheated with the marking tools member.
25. each tool component according to claim 21-24, wherein tool component is one of following: wear part, sander, wortle, gauge diamond and cutter.
26. a tool component, each method manufacturing during it uses according to claim 1-20.
27. an instrument, it comprises in according to claim 21 one or more-26 each tool component.
28. electron irradiation is to the toughness of the diamond that improve to be used for tool applications and/or the purposes of wear resistance, it comprises the energy of controlling irradiation and dosage so that the diamond with a plurality of isolated rooms point defect to be provided, and described isolated room point defect has 1 * 10 14-1 * 10 22Individual room/cm -3Concentration.
29. through the purposes of diamond in tool applications of electron irradiation, wherein said diamond comprises and has 1 * 10 14-1 * 10 22Individual room/cm -3The isolated room point defect of concentration.
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108608345A (en) * 2018-07-13 2018-10-02 华侨大学 A kind of low temperature brazing diamond and its brazing filler metal alloy containing Cr
CN109152998A (en) * 2016-05-17 2019-01-04 六号元素(英国)有限公司 Diamond tool part
CN109796223A (en) * 2019-01-23 2019-05-24 太原科技大学 The method that silicon vacancy defect and GR1 neutrality vacancy defect mutually convert in diamond
CN111247275A (en) * 2017-10-20 2020-06-05 住友电气工业株式会社 Synthetic single crystal diamond, tool, and method for producing synthetic single crystal diamond
CN113414716A (en) * 2021-05-24 2021-09-21 江阴市科雷特工具有限公司 Wear-resistant diamond grinding wheel and preparation method thereof

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8884251B2 (en) 2010-06-03 2014-11-11 Element Six Limited Diamond tools
GB201121642D0 (en) * 2011-12-16 2012-01-25 Element Six Ltd Single crtstal cvd synthetic diamond material
TWI511836B (en) * 2013-05-09 2015-12-11 Kinik Co Detection apparatus and method of chemical mechanical polishing conditioner
TWI551399B (en) * 2014-01-20 2016-10-01 中國砂輪企業股份有限公司 Chemical mechanical polishing conditioner with high quality abrasive particles
EP3170926A4 (en) 2014-07-15 2018-07-11 Sumitomo Electric Industries, Ltd. Single crystal diamond, method for producing single crystal diamond, and tool using single crystal diamond
JP2018500905A (en) * 2014-12-18 2018-01-18 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア Detection of conformational change of nucleic acid polymerase using nanotubes
US10287708B2 (en) 2015-07-22 2019-05-14 Sumitomo Electric Industries, Ltd. Single-crystal diamond material, single-crystal diamond chip, and perforated tool
KR102655136B1 (en) 2017-10-20 2024-04-04 스미토모덴키고교가부시키가이샤 synthetic single crystal diamond
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NL2021956B1 (en) * 2018-11-08 2020-05-15 Univ Johannesburg Method and system for high speed detection of diamonds
US20220411963A1 (en) * 2019-11-26 2022-12-29 Sumitomo Electric Industries, Ltd. Synthetic single crystal diamond, tool including the same and method of producing synthetic single crystal diamond
CN111304750A (en) * 2020-04-03 2020-06-19 湖州中芯半导体科技有限公司 Method for improving hardness of CVD diamond
GB2614522B (en) * 2021-10-19 2024-04-03 Element Six Tech Ltd CVD single crystal diamond
JP7561174B2 (en) 2022-12-17 2024-10-03 エレメント シックス リミテッド Diamond abrasive grains for use in grinding wheels for semiconductor components, and method for manufacturing diamond abrasive grains for use in grinding wheels for semiconductor components
WO2024127679A1 (en) 2022-12-17 2024-06-20 株式会社ディスコ Grinding stone for processing semiconductor member, tool for processing semiconductor member, semiconductor production device, and method for producing grinding stone for processing semiconductor member
WO2024150624A1 (en) * 2023-01-11 2024-07-18 住友電気工業株式会社 Synthetic monocrystalline diamond
JP7382692B1 (en) * 2023-03-08 2023-11-17 株式会社ディスコ Method for producing detonation diamond-containing single-crystalline diamond, detonation diamond-containing single-crystalline diamond-containing polycrystalline diamond particles, and detonation diamond-containing single-crystalline diamond-containing polycrystalline diamond particles

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4012300A (en) * 1974-02-22 1977-03-15 Robert John Caveney Method of altering the friability of abrasive particles
US4184079A (en) * 1977-05-26 1980-01-15 National Research Development Corporation Radiation toughening of diamonds
GB1588418A (en) * 1978-05-17 1981-04-23 Atomic Energy Authority Uk Artefacts incorporating industrial diamonds
SU1346418A1 (en) * 1985-10-18 1987-10-23 Всесоюзный Научно-Исследовательский Конструкторско-Технологический Институт Подшипниковой Промышленности Method of producing diamond tool
EP0275063A2 (en) * 1987-01-12 1988-07-20 Sumitomo Electric Industries Limited Light emitting element comprising diamond and method for producing the same
CN101679040A (en) * 2007-05-10 2010-03-24 国家健康与医学研究院 Method to produce light-emitting nano-particles of diamond

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4273561A (en) 1975-08-27 1981-06-16 Fernandez Moran Villalobos Hum Ultrasharp polycrystalline diamond edges, points, and improved diamond composites, and methods of making and irradiating same
ZA797004B (en) * 1979-01-17 1980-11-26 De Beers Ind Diamond Diamond treatment
US4319889A (en) 1979-08-06 1982-03-16 Villalobos Humberto F Ultrasharp diamond edges and points and methods of making same by precision micro-irradiation techniques
DE3202697A1 (en) 1982-01-28 1983-08-04 Kapp & Co Werkzeugmaschinenfabrik, 8630 Coburg METHOD AND DEVICE FOR FINE-PROFILING TOOLS COATED WITH SUPER-HARD MATERIALS
JPS59229227A (en) * 1983-06-08 1984-12-22 Sumitomo Electric Ind Ltd Die using single crystal of synthetic diamond
JPS63237821A (en) * 1987-03-26 1988-10-04 Osaka Daiyamondo Kogyo Kk Diamond tool and manufacture thereof
JP2571795B2 (en) 1987-11-17 1997-01-16 住友電気工業株式会社 Purple diamond and method for producing the same
JPH0287691A (en) * 1988-09-26 1990-03-28 Sumitomo Electric Ind Ltd Manufacture of diamond laser element
JPH0712485B2 (en) * 1989-04-06 1995-02-15 住友電気工業株式会社 Material for wire drawing die and wire drawing die using the material
RU1813812C (en) 1991-03-05 1993-05-07 Научно-исследовательский институт высоких напряжений при Томском политехническом институте им.С.М.Кирова Process for applying composite chromium coatings
JPH0679504A (en) 1992-08-31 1994-03-22 Sumitomo Electric Ind Ltd Polycrystal diamond cutting tool and its manufacture
US5366522A (en) 1991-11-07 1994-11-22 Sumitomo Electric Industries, Ltd. Polycrystalline diamond cutting tool and method of manufacturing the same
JP3314444B2 (en) 1993-03-15 2002-08-12 住友電気工業株式会社 Red and pink diamonds
JPH10236899A (en) * 1997-02-27 1998-09-08 Matsushita Electric Works Ltd Quantitative measuring method of impurity
JPH1171197A (en) 1997-08-13 1999-03-16 General Electric Co <Ge> Surface-reinforced diamond and its production
WO1999048107A1 (en) 1998-03-17 1999-09-23 Sellschop Jacques Pierre Fried Method of producing carbon with electrically active sites
WO2001079583A2 (en) 2000-04-14 2001-10-25 Technology International, Inc. Diamonds having improved durability
JP2003051609A (en) * 2001-08-03 2003-02-21 Tokyo Gas Co Ltd Ultraviolet light-emitting element with diamond high luminance
GB0302216D0 (en) * 2003-01-30 2003-03-05 Element Six Ltd Marking of diamond
GB0303860D0 (en) 2003-02-19 2003-03-26 Element Six Ltd CVD diamond in wear applications
RU2334974C2 (en) 2004-03-12 2008-09-27 Зелльшоп Сусан Мариетта Detection of diamonds
JP2006021963A (en) * 2004-07-08 2006-01-26 Sumitomo Electric Ind Ltd Method for manufacturing high hardness diamond crystal
KR101277232B1 (en) 2004-09-10 2013-06-26 카네기 인스티튜션 오브 워싱턴 Ultratough cvd single crystal diamond and three dimensional growth thereof
JP5284575B2 (en) * 2006-10-31 2013-09-11 住友電気工業株式会社 Diamond single crystal and manufacturing method thereof
JP2008229810A (en) 2007-03-23 2008-10-02 Allied Material Corp Diamond tool for ultra-precision machining
KR100910227B1 (en) 2007-09-10 2009-07-31 주식회사 하이닉스반도체 Cooling unit for semiconductor module
CN101827959A (en) * 2007-10-02 2010-09-08 华盛顿卡耐基研究所 To diamond annealed low pressure method
TR201816224T4 (en) 2009-06-26 2018-11-21 Element Six Tech Ltd Fancy pale blue or fancy pale blue / green procedure for making single crystal CVD diamonds and the resulting product.
US8986646B2 (en) * 2009-06-26 2015-03-24 Element Six Technologies Limited Diamond material
US8884251B2 (en) * 2010-06-03 2014-11-11 Element Six Limited Diamond tools

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4012300A (en) * 1974-02-22 1977-03-15 Robert John Caveney Method of altering the friability of abrasive particles
US4184079A (en) * 1977-05-26 1980-01-15 National Research Development Corporation Radiation toughening of diamonds
GB1588418A (en) * 1978-05-17 1981-04-23 Atomic Energy Authority Uk Artefacts incorporating industrial diamonds
SU1346418A1 (en) * 1985-10-18 1987-10-23 Всесоюзный Научно-Исследовательский Конструкторско-Технологический Институт Подшипниковой Промышленности Method of producing diamond tool
EP0275063A2 (en) * 1987-01-12 1988-07-20 Sumitomo Electric Industries Limited Light emitting element comprising diamond and method for producing the same
CN101679040A (en) * 2007-05-10 2010-03-24 国家健康与医学研究院 Method to produce light-emitting nano-particles of diamond

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109152998A (en) * 2016-05-17 2019-01-04 六号元素(英国)有限公司 Diamond tool part
CN111247275A (en) * 2017-10-20 2020-06-05 住友电气工业株式会社 Synthetic single crystal diamond, tool, and method for producing synthetic single crystal diamond
CN111247275B (en) * 2017-10-20 2022-03-22 住友电气工业株式会社 Synthetic single crystal diamond, tool, and method for producing synthetic single crystal diamond
CN108608345A (en) * 2018-07-13 2018-10-02 华侨大学 A kind of low temperature brazing diamond and its brazing filler metal alloy containing Cr
CN108608345B (en) * 2018-07-13 2020-08-07 华侨大学 Low-temperature brazing diamond containing Cr and brazing filler metal alloy thereof
CN109796223A (en) * 2019-01-23 2019-05-24 太原科技大学 The method that silicon vacancy defect and GR1 neutrality vacancy defect mutually convert in diamond
CN113414716A (en) * 2021-05-24 2021-09-21 江阴市科雷特工具有限公司 Wear-resistant diamond grinding wheel and preparation method thereof
CN113414716B (en) * 2021-05-24 2023-08-25 江阴市科雷特工具有限公司 Wear-resistant diamond grinding wheel and preparation method thereof

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