CN102937752A - Electrically and actively modulated near-infrared thin-film filtering device - Google Patents
Electrically and actively modulated near-infrared thin-film filtering device Download PDFInfo
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- CN102937752A CN102937752A CN2012104882030A CN201210488203A CN102937752A CN 102937752 A CN102937752 A CN 102937752A CN 2012104882030 A CN2012104882030 A CN 2012104882030A CN 201210488203 A CN201210488203 A CN 201210488203A CN 102937752 A CN102937752 A CN 102937752A
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Abstract
The invention discloses an electrically and actively modulated near-infrared thin-film filtering device which belongs to the technical field of film deposition, and can change the transmittance or reflectivity of the filtering device in a near-infrared band. The electrically and actively modulated near-infrared thin-film filtering device comprises a base, wherein multiple Si material layers and SiO2 material layers are alternatively deposited at an optical transmission area on the base; an Si-doped P-type positive electrode area and an Si-doped N-type negative electrode area are respectively deposited at two ends of the base; and the P-type positive electrode area and the N-type negative electrode area are respectively connected to the positive pole and the negative pole of an external bias voltage. According to the invention, the transmittance or reflectivity of the filtering device in the near-infrared band can be modulated electrically and actively, so that high practical value can be achieved.
Description
Technical field
The invention belongs to the film deposition techniques field, be specifically related to the initiatively near infrared film-type filtering device of modulation of a kind of electricity.
Background technology
Near-infrared band refers to the light wave of wavelength at 1 μ m-3 μ m, at the filtering device of this wave band work, is widely used in the optical communication field.
In the optical communication field, telecommunication is one of direction of main development.Typical remote transceiver signal at least can transmit 100 kilometers under the condition without amplifying, and its purpose is mainly to save expensive image intensifer, reduces the cost of optical communication.Consideration based on transmission range, a lot of remote transceivers have all selected 1550 wave bands (wavelength coverage is about 1530 to 1565nm) as service band.Communication facilities volume for optical communication is more and more less, and the interface density that interface board comprises is more and more higher, requires photoelectric device to future development low-cost, low-power consumption.Current little encapsulation optical module also all adopts low-voltage 3.3v power supply, has guaranteed that the increase of port can not improve the power consumption of system.
The film-type filtering device is realized required filtering characteristic by the method for plated film, has simple in structure, thin thickness, the characteristics such as lightweight and low in energy consumption.The function that refers to device simple in structure realizes that only need in substrate, be coated with the film layer structure designed gets final product.Thin thickness refers to that the overall film thickness be coated with is at micro-meter scale.Lightweightly refer to that the weight of film on three dimension scale compares and can ignore with substrate.Low in energy consumption referring to only needs lower driving voltage can realize required filtering characteristic.Therefore the film-type filtering device is a kind of filtering device that has application prospect in the optical communication field.
Silicon is a kind of semiconductor material, simultaneously because of its good optical characteristics also Chang Zuowei infrared optical thin film materials'use.
Summary of the invention
The technical matters that the present invention solves is improved for film-type wave filter in prior art, provides a kind of and can initiatively be modulated at the film-type filtering device that near-infrared band changes filtering device transmitance or reflectivity by electricity.
Technical scheme of the present invention is:
A kind of electricity is the near infrared film-type filtering device of modulation initiatively, comprises substrate, and the optical lens on substrate is crossed district's alternating deposit multilayer Si material layer and SiO
2Material layer, the two ends on substrate deposit respectively the P type positive electrode region of Si doping and the N-type negative electrode region of Si doping; P type positive electrode region and N-type negative electrode region are wired to respectively on the positive pole and negative pole of external bias voltage.
The present invention proposes the initiatively near infrared film-type filtering device of modulation of a kind of novel electricity, and design concept is as follows:
Utilize the electrology characteristic of silicon materials, propose a kind of device architecture of the film-type in conjunction with carrier injection mechanism.Utilize the characteristic of the PIN joint of silicon materials, silicon materials are adulterated and form P type positive electrode region and N-type negative electrode region.I district for being adulterated between P type positive electrode region and N-type negative electrode region, the optical lens that is the near-infrared band light wave is crossed window.When forward bias is applied between P type positive electrode region and N-type negative electrode region, the hole of P type positive electrode region flows to the N-type negative electrode region, the electron stream of N-type negative electrode region, to P type positive electrode region, forms the electric current of forward, and has formed almost free carrier distribution uniformly in hole, I district and electronics.The injection of this free carrier in the I district will cause the change of the refractive index of I district undoped silicon, and then change transmitance or the reflectance varies in I district, reach the initiatively purpose of modulation.
Therefore, by P type positive electrode region, N-type negative electrode region and unadulterated I district to doping, carry out optics and electricity structure optimal design, can obtain the initiatively near infrared film-type filtering device of modulation of a kind of electricity.
Beneficial effect of the present invention: a kind of electricity of the present invention is the near infrared film-type filtering device of modulation initiatively, and the optical lens on substrate is crossed district's alternating deposit multilayer Si material layer and SiO
2Material layer, the two ends on substrate deposit respectively the P type positive electrode region of Si doping and the N-type negative electrode region of Si doping, have volume characteristics little, lightweight and simple in structure; P type positive electrode region and N-type negative electrode region are wired to respectively on the positive pole and negative pole of external bias voltage, realize initiatively modulation of electricity, can change filtering device transmitance or reflectivity at near-infrared band, have very high practical value.
The accompanying drawing explanation
Fig. 1 is the initiatively structural representation of the film-type filtering device of modulation of a kind of electricity of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in more detail.
Embodiment 1:
As shown in Figure 1, select quartz as substrate 1 material.The top middle part of substrate 1 is that optical lens is crossed district, and the top both sides of substrate 1 are respectively P type positive electrode region 2 and N-type negative electrode region 3.Utilize filming equipment, under high vacuum condition (<3 * 10
-3Pa), according to the film system of design, use physical gas-phase deposite method optical lens on substrate 1 to cross Si material layer 7 that district's alternating deposit physical thickness is 75nm and the SiO of physical thickness 185nm
2Material layer 8.Si material layer 7 and SiO
2Material layer 8 is respectively 6 layers, and the physical thickness of deposition materials can be used existing quartz crystal film-thickness monitoring to control.Treat Si material layer 7 and SiO
2After material layer 8 depositions, in the surperficial side of substrate 1, use doping Si that the method deposition physical thickness of physical vapour deposition (PVD) is 1600nm as P type positive electrode region 2, the opposite side on substrate 1 surface is used doping Si that the physical vapour deposition (PVD) physical thickness is 1600nm as N-type negative electrode region 3.Be connected grid bias power supply anodal 4 and power cathode 5 at P type positive electrode region 2 with difference welding lead 6 on N-type negative electrode region 3.The active modulation result of this example is: for the light of 1550nm wavelength, the device transmitance of no-bias state is 33.35%, and after applying the 1.5V bias effect, the device transmitance is 98.29%.
Embodiment 2:
As shown in Figure 1, select quartz as substrate 1 material.The top middle part of substrate 1 is that optical lens is crossed district, and the top both sides of substrate 1 are respectively P type positive electrode region 2 and N-type negative electrode region 3.Utilize filming equipment, under high vacuum condition (<3 * 10
-3Pa), the film system according to design, used physical gas-phase deposite method optical lens on substrate 1 to cross district alternating deposit Si material layer 7 and SiO
2Material layer 8.The physical thickness of deposition is 23nm, 296nm, 50nm, 193nm, 79nm, 193nm, 79nm, 193nm, 79nm, 131nm, 86nm, 360nm, totally 12 layers.The physical thickness of deposition materials can be used existing quartz crystal film-thickness monitoring to control.Treat Si material layer 7 and SiO
2After material layer 8 depositions, in the surperficial side of substrate 1, use doping Si that the method deposition physical thickness of physical vapour deposition (PVD) is 1764nm as P type positive electrode region 2, the opposite side on substrate 1 surface is used doping Si that the physical vapour deposition (PVD) physical thickness is 1764nm as N-type negative electrode region 3.Be connected grid bias power supply anodal 4 and power cathode 5 at P type positive electrode region 2 with difference welding lead 6 on N-type negative electrode region 3.The active modulation result of this example is: for the light of 1550nm wavelength, the device transmitance of no-bias state is 46.86%, and after applying the 1.5V bias effect, the device transmitance is 99.16%.
Claims (1)
1. the near infrared film-type filtering device that electricity is initiatively modulated, comprise substrate (1), it is characterized in that, the optical lens on substrate (1) is crossed district's alternating deposit multilayer Si material layer (7) and SiO
2Material layer (8), the both sides on substrate (1) deposit respectively the P type positive electrode region (2) of Si doping and the N-type negative electrode region (3) of Si doping; P type positive electrode region (2) and N-type negative electrode region (3) are connected on the positive pole (4) and negative pole (5) of external bias voltage by wire (6) respectively.
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| CN201210488203.0A CN102937752B (en) | 2012-11-26 | 2012-11-26 | Electrically and actively modulated near-infrared thin-film filtering device |
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| CN201210488203.0A CN102937752B (en) | 2012-11-26 | 2012-11-26 | Electrically and actively modulated near-infrared thin-film filtering device |
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| CN102937752A true CN102937752A (en) | 2013-02-20 |
| CN102937752B CN102937752B (en) | 2015-06-10 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03217825A (en) * | 1990-01-23 | 1991-09-25 | Victor Co Of Japan Ltd | Space optical modulating element |
| JPH0713186A (en) * | 1993-06-22 | 1995-01-17 | Victor Co Of Japan Ltd | Spatial optical modulation element |
| CN101431109A (en) * | 2008-12-03 | 2009-05-13 | 中国科学技术大学 | One-dimensional silicon/silicon dioxide photon crystal filter |
| CN101952755A (en) * | 2008-02-29 | 2011-01-19 | 株式会社藤仓 | Substrate type light waveguide element, wavelength dispersion compensating element, optical filter, optical resonator and method for designing the light waveguide element, the wavelength dispersion compensating element, the filter and the resonator |
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2012
- 2012-11-26 CN CN201210488203.0A patent/CN102937752B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03217825A (en) * | 1990-01-23 | 1991-09-25 | Victor Co Of Japan Ltd | Space optical modulating element |
| JPH0713186A (en) * | 1993-06-22 | 1995-01-17 | Victor Co Of Japan Ltd | Spatial optical modulation element |
| CN101952755A (en) * | 2008-02-29 | 2011-01-19 | 株式会社藤仓 | Substrate type light waveguide element, wavelength dispersion compensating element, optical filter, optical resonator and method for designing the light waveguide element, the wavelength dispersion compensating element, the filter and the resonator |
| CN101431109A (en) * | 2008-12-03 | 2009-05-13 | 中国科学技术大学 | One-dimensional silicon/silicon dioxide photon crystal filter |
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