CN102931277B - A kind of Ni assistant chemical etch prepares the method for black silicon - Google Patents
A kind of Ni assistant chemical etch prepares the method for black silicon Download PDFInfo
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Abstract
The present invention relates to a kind of method preparing black silicon, belong to field of photoelectric technology.First the present invention uses acetone, ethanol and ultra-pure water to carry out ultrasonic cleaning to monocrystalline silicon piece successively, to remove silicon chip surface greasy dirt and metal ion; Then NaOH solution silicon chip being put into high concentration corrodes several minutes, to remove surface damage layer; Then NaOH solution silicon chip being put into low concentration is corroded several tens minutes thus forms pyramidal structure at silicon chip surface; Then adopt magnetron sputtering method at the thin Ni film of pyramid surface sputtering one deck; Finally be placed on H
2o
2, HF and ultra-pure water mixed solution in carry out chemical corrosion to prepare the black silicon of antireflective nano micro-structural on pyramid.This invention adopts the Ni that relative Pt, Au and Ag are more cheap to carry out assistant chemical corrosion, reduces black silicon preparation cost, and can realize the preparation of the black silicon of large area.
Description
Technical field
The invention belongs to technical field of semiconductors, relate to a kind of method that chemical corrosion method prepares black silicon.
Background technology
Global energy shortage, environmental pollution, climate warming just day by day seriously annoying human society.Seek green alternative energy source, realize sustainable development, become the problem of countries in the world facing.In the long run, regenerative resource will be the main energy sources source of the following mankind.In the utilization of the regenerative resource of new development, solar cell most potentiality.
Silicon storage is on earth enriched, and easily purifies, high temperature resistant, easily forms natural oxide, has good semiconducting insulation bed boundary, therefore crystalline silicon by a large amount of for solar cell and semiconductor integrated circuit field.But the high reflectance of crystalline silicon itself, makes its performance in the application of solar cell and photoelectric device not good.In order to reduce the reflectivity on crystal silicon solar energy battery surface, increase light absorption, general method falls into light micro-structural and deposition antireflection film in silicon face preparation; Prepare anti-reflection micro-structure mainly refer to utilize NaOH(or KOH) and the mixed solution of isopropyl alcohol (or ethanol) in silicon chip surface wet-layer preparation pyramid structure, but etching method not only has requirement to the crystal orientation of crystalline material, and surface reflectivity can only be reduced in very narrow wavelength band, reflectivity, still more than 10%, is not enough to meet the requirement reducing silicon chip surface reflectivity to greatest extent.Prepare antireflective coating and refer to that methods such as utilizing PECVD deposits one deck anti-reflective film (SiO at silicon chip surface
x, TiO
x, ZnO, ITO or Si
3n
4), and anti-reflective film thickness is relevant with the refractive index of lambda1-wavelength and anti-reflective film, this just determines the antireflection effect that anti-reflective film can only play limited spectral range, and also restricted to incident angle of light.
Black silicon, as the very low silicon face of a kind of reflectivity or silica-base film, has consistent low reflection high-selenium corn performance in the wavelength band that near ultraviolet-near-infrared is very wide.The method of the black silicon of current preparation has femtosecond pulse method, plasma etching method, electrochemical erosion method metal ion assistant chemical etch.Black silicon is at SF the earliest by people [Applied Physics Letters, 1998,73 (12): 1673-1675] such as Mazur E
6with femto-second laser pulse active silicon surface in atmosphere, the micro-surface of the tip-like obtained, due to SF
6gas forms H under laser pulse effect
2the toxic gases such as S, the black silicon that researcher adopts the method for knitting of plasma surface to prepare at silicon chip surface, in 400 ~ 1100 nm wavelength band, average reflectance is 2.6%; Korea Energy Source Inst Yoo J [Solar Energy, 2010,84 (4): 730-734] the black silicon that reactive ion etching legal system is standby is utilized, surface topography is the pyramid at volcanic crater, at 300 ~ 850 nm wave band average reflectances 8.9%, when without traditional antireflective coating, the efficiency of solar cell of preparation is 16.7%.Fudan University Hou Xiao seminar far away [Applied Physics Letters, 2006,88 (17): 171907 (1-3)] adopt pulse corrosion current method to prepare the multi-layer porous black silicon of gradually changed refractive index, within the scope of broadband, its reflectivity is lower than 5%, Xiong Zuhong seminar of Southwestern University [Acta Physica Sinica, 2007,57 (01): 514-518] computer-controlled electrolytic corrosion monocrystalline silicon of exponentially decaying is adopted, obtain the black silicon membrane layer that refractive index is gradual, at 400-800 nm reflectivity lower than 5%.Due to femtosecond pulse method and plasma method apparatus expensive, complex process, the black silicon area of preparation is little, and the technological operation of electrochemical erosion method is unfavorable for that industrialization is produced.Metal assistant chemical etch preparation cost is low, and technique is simple, can realize large area industrialization and produce.2009, [the Applied physics letters such as the Yuan H C in U.S.'s regenerative resource laboratory, 2009,95 (12): 123501 (1-3)] report the black silicon of a step nano particle catalysis etching preparation as solar cell, the battery efficiency obtained is 16.8%.During the one step nano particle catalysis etching black silicon of preparation, get the p-type twin polishing silicon chip of (100), silicon chip is immersed containing 0.4 mM HAuCl
4solution, add with amount HF:H
2o
2: H
2in O=1:5:2 mixed solution, then in ultrasonic tank, process 1 ~ 8 min, use I
2the ultrasonic Au removing surface of/KI solution, then use deionized water rinsing and N
2dry up.Finally by compromise reflectivity and internal quantum, black silicon solar cell when do not have traditional antireflective film its efficiency thick through the 500nm of 3min etching preparation reaches 16. 8%.2011, [the Applied Surface Science such as the Liu Aimin of Dalian University of Technology, 2011,257 (17): 7411-7414] utilize Ag particle assist the etch average reflectance prepared within the scope of 250 ~ 1000nm be 0.9% black silicon structure.First silicon chip is prepared pyramid matte by them in NaOH solution, then deposits the netted silver-colored thin layer of one deck by magnetron sputtering at textured surfaces, then adopts HF and H
2o
2mixed solution corrode.2011, the Fatima Toor in U.S.'s regenerative resource laboratory etc. [In:the 37th IEEE Photovoltaic Specialists Conference [C]. Seattle, Washington:Alliance for Sustainable Energy, 2011] performance of solar cell is further improved again by adding making herbs into wool step, they use p-type (100) silicon chip, first soak 1min with 10%HF and remove silicon chip surface natural oxidizing layer.Then silicon chip is put into the mixed solution of KOH and the 200ml isopropyl alcohol preparation of 600ml 2.5%, in water-bath, corrode 25min at 80 DEG C of temperature.Then the silicon chip of making herbs into wool is put into the HCl:H of 80 DEG C
2o
2: H
2leave standstill 10min in O=1:1:5 solution to remove residual potassium impurity, make battery efficiency rise to 17.1%.In the same year, Xia Yang seminar of Microelectronic Institute of the Chinese Academy of Sciences of China [Solar Energy, 2011,85:1574-1578] for black silicon, is 1.79% at the average reflectance of 300 ~ 1000nm scope by reactive ion etching legal system.The transformation efficiency obtaining battery with this black silicon is 15.68%, and wherein fill factor, curve factor is 0.783.But the metal utilized in existing metal assistant chemical etch is all noble metal, and this is unfavorable for the reduction of production cost very much.Therefore, the key that a kind of relatively inexpensive metal is the black silicon of preparation low cost is found.
Summary of the invention
A kind of method preparing black silicon.Method used in the present invention has that preparation technology is simple, without the need to complex device, preparation cost is low and can realize the features such as large area industrialization production, alternative traditional antireflective coating, reduce the light reflection of silicon chip surface, improve solar cell transformation efficiency, the final preparation cost reducing solar cell.
The method that low cost involved in the present invention prepares black silicon is achieved through the following technical solutions, and specifically comprises following step:
Ni assistant chemical etch prepares a method for black silicon, it is characterized in that, comprises the steps:
(1) acetone, ethanol and ultra-pure water is first used successively to each ultrasonic cleaning 10min of monocrystalline silicon piece;
(2) then silicon chip is put into the NaOH solution that mass percent is 25%, at 85 DEG C, corrode 5min;
(3) silicon chip is put into the NaOH solution that mass percent is 2% ~ 2.5%, temperature is 70 ~ 85 DEG C of water-bath corrosion 20 ~ 40min, thus forms pyramidal structure at silicon chip surface;
(4) adopt magnetron sputtering method at pyramid surface sputtering layer of Ni film;
(5) H is placed on subsequently
2o
2, HF and ultra-pure water mixed solution in carry out chemical corrosion to prepare the black silicon of antireflective nano micro-structural on pyramid; Wherein chemical corrosion condition is the H of 40wt.%
2o
2, the HF of 40wt.% and resistance is the ultra-pure water of 18.2M Ω, the volume ratio of above-mentioned three is 1:2:0.25 ~ 1:2:23, and etching time is 30s ~ 300s, and corrosion temperature is 0 ~ 80 DEG C;
(6) black silicon sample is placed in watery hydrochloric acid rinsing to remove the residual Ni of black silicon;
(7) finally with ultra-pure water, sample is rinsed.
As a kind of optimal way:
Ni assistant chemical etch prepares a method for black silicon, it is characterized in that, comprises the steps:
(1) acetone, ethanol and ultra-pure water is first used successively to each ultrasonic cleaning 10min of monocrystalline silicon piece;
(2) then silicon chip is put into the NaOH solution that mass percent is 25%, at 85 DEG C, corrode 5min;
(3) adopt magnetron sputtering method at silicon chip surface sputtering layer of Ni film;
(4) H is placed on subsequently
2o
2, HF and ultra-pure water mixed solution in carry out chemical corrosion to prepare the black silicon of antireflective nano micro-structural; Wherein chemical corrosion condition is the H of 40wt.%
2o
2, the HF of 40wt.% and resistance is the ultra-pure water of 18.2M Ω, the volume ratio of above-mentioned three is 1:2:0.25 ~ 1:2:23, and etching time is 30s ~ 300s, and corrosion temperature is 0 ~ 80 DEG C;
(5) black silicon sample is placed in watery hydrochloric acid rinsing to remove the residual Ni of black silicon;
(6) finally with ultra-pure water, sample is rinsed.
The technique that wherein said magnetron sputtering method prepares Ni film is: power used is 150W, and underlayer temperature is room temperature, and Ar flow is 20sccm, and substrate disc rotating speed is 10r/min.
Ni film thickness wherein described in step (4) is 5 ~ 200nm.
The introduction of magnetron sputtering method:
In the present invention, the operation principle of magnetron sputtering refers to that electronics is under the effect of electric field E, collides flying in substrate process, make it ionize and produce Ar cation and new electronics with ar atmo; New electronics flies to substrate, and Ar ion accelerates to fly to cathode target under electric field action, and with high-energy bombardment target surface, target is sputtered.In sputtering particle, neutral target atom or molecule deposition form film on substrate, and the secondary electron produced can be subject to Electric and magnetic fields effect, produce E(electric field) × B(magnetic field) the direction drift of indication, be called for short E × B drift, its movement locus is similar to a cycloid.If toroidal magnetic field, then electronics just moves in a circle on target surface with approximate cycloid form, their motion path is not only very long, and be bound in the heating region on target surface, and ionize a large amount of Ar cations in this region and bombard target, thus achieve high deposition rate.Along with the increase of collision frequency, the energy ezpenditure of secondary electron totally, gradually away from target surface, and is finally deposited on substrate under the effect of electric field E.Because the energy of this electronics is very low, the energy passing to substrate is very little, causes substrate temperature rise lower.Magnetron sputtering is exactly the collision process of incoming particle and target.Incoming particle experiences complicated scattering process in target, and target atom collision, and part momentum is passed to target atom, and this target atom collides with other target atoms again, forms cascade process.In this cascade process, the target atom of some near surface obtains enough momentum of outwards motion, leaves target sputtered out.
the principle of the invention:
Use Ni assistant chemical etch corrosion monocrystalline silicon piece, by control Ni film thickness, corrosive liquid concentration and etching time, prepare nano-micro structure on pyramid surface, i.e. black silicon, this structure has excellent reflection preventing ability.Specifically, the electronegativity due to Ni is 1.91, slightly higher than silicon (1.90), therefore, is placed in HF and H when surface deposition there being the Si sheet of Ni film
2o
2mixed solution in after, the electrons in Si moves and by H in Ni
2o
2in O
1-obtain, and the Si losing electronics forms Si
4+, it and HF react and first generate SiF
4, then removed by HF; When Ni film is very fine and close, O
1-first can obtain the electronics of Ni, after waiting Si to contact with corrosive liquid, Si is corroded.It is exactly more than the principle of Ni assistant chemical corrosion silicon.
Ni assistant chemical etch is the more cheap black silicon preparation method of the noble metal assistant chemical etch such as a kind of relative Pt, Au and Ag, has larger practicality.
beneficial effect
1, the present invention compares with Ag assistant chemical etch with existing Pt, Au, employ relatively inexpensive W metal and carry out assistant chemical corrosion monocrystalline silicon piece to prepare black silicon structure, by control Ni film thickness, etchant solution concentration and etching time, prepare nano-micro structure on pyramid surface to reach antireflecting effect;
2, the present invention is compared with other black silicon preparation method, and technique is simple, and commercial viability is higher, reduces costs have using value to raising solar cell conversion efficiency.
Accompanying drawing explanation
Fig. 1 is that in embodiment 1, Ni metal assists the photomacrograph before and after corrosion: before (a) corrosion, after (b) corrosion;
Fig. 2 is that in embodiment 5 and embodiment 6, sample Ni metal assists the SEM figure after corrosion: (a) example 5, vertical view, (b) example 6, vertical view; (c) example 5, cross-sectional view, (d) example 6, cross-sectional view;
Fig. 3 is that in embodiment 5 and embodiment 6, sample Ni metal assists the reflectance curve before and after corrosion: before (a) example 5 is corroded, (b) example 6, before corrosion, (c) example 5, after corrosion, (d) example 6, after corrosion.
Embodiment
Below in conjunction with embodiment, the invention will be further described, but should not limit the scope of the invention with this.
embodiment 1
(1) acetone, ethanol and ultra-pure water is first used successively to each ultrasonic cleaning 10min of monocrystalline silicon piece, to remove
Silicon chip surface greasy dirt and metal ion;
(2) then silicon chip is put into the NaOH solution that mass percent is 25%, at 85 DEG C, corrode 5min, remove the damage layer on upper and lower two surfaces of silicon chip;
(3) then will go the silicon chip of damage layer to put into NaOH solution that mass percent is 2.5%, corrodes 40min thus forms pyramidal structure at silicon chip surface at 70 DEG C;
(4) adopt magnetron sputtering method at the Ni film of pyramid surface sputtering one deck 5nm;
(5) H is placed on subsequently
2o
2(40wt.%), carry out chemical corrosion 30s to prepare the black silicon of antireflective nano micro-structural on pyramid in the mixed solution of the volume ratio 1:2:23 of HF (40wt.%) and ultra-pure water (18.2M Ω), corrosion temperature is 78 DEG C;
(6) black silicon sample is placed in watery hydrochloric acid rinsing to remove the residual Ni of black silicon;
(7) finally with a large amount of ultra-pure waters, sample is rinsed.
When wherein magnetron sputtering method prepares Ni film, power used is 150W, and underlayer temperature is room temperature, and Ar flow is 20sccm, and substrate disc rotating speed is 10r/min.
Result: within the scope of 200 ~ 1000nm, average reflectance is 2.32%.
embodiment 2
(1) acetone, ethanol and ultra-pure water is first used successively to each ultrasonic cleaning 10min of monocrystalline silicon piece, to remove
Silicon chip surface greasy dirt and metal ion;
(2) then silicon chip is put into the NaOH solution that mass percent is 25%, at 85 DEG C, corrode 5min, remove the damage layer on upper and lower two surfaces of silicon chip;
(3) then will go the silicon chip of damage layer to put into NaOH solution that mass percent is 2.0%, corrodes 20min thus forms pyramidal structure at silicon chip surface at 85 DEG C;
(4) adopt magnetron sputtering method at the Ni film of pyramid surface sputtering one deck 200nm;
(5) H is placed on subsequently
2o
2(40wt.%), carry out chemical corrosion 300s to prepare the black silicon of antireflective nano micro-structural on pyramid in the mixed solution of the volume ratio 1:2:0.25 of HF (40wt.%) and ultra-pure water (18.2M Ω), corrosion temperature is 2 DEG C;
(6) black silicon sample is placed in watery hydrochloric acid rinsing to remove the residual Ni of black silicon;
(7) finally with a large amount of ultra-pure waters, sample is rinsed.
When wherein magnetron sputtering method prepares Ni film, power used is 150W, and underlayer temperature is room temperature, and Ar flow is 20sccm, and substrate disc rotating speed is 10r/min.
Result: within the scope of 200 ~ 1000nm, average reflectance is 2.26%.
embodiment 3
(1) acetone, ethanol and ultra-pure water is first used successively to each ultrasonic cleaning 10min of monocrystalline silicon piece, to remove
Silicon chip surface greasy dirt and metal ion;
(2) then silicon chip is put into the NaOH solution that mass percent is 25%, at 85 DEG C, corrode 5min, remove the damage layer on upper and lower two surfaces of silicon chip;
(3) then will go the silicon chip of damage layer to put into NaOH solution that mass percent is 2.5%, corrodes 30min thus forms pyramidal structure at silicon chip surface at 75 DEG C;
(4) adopt magnetron sputtering method at the Ni film of pyramid surface sputtering one deck 40nm;
(5) H is placed on subsequently
2o
2(40wt.%), carry out chemical corrosion 180s to prepare the black silicon of antireflective nano micro-structural on pyramid in the mixed solution of the volume ratio 1:2:10 of HF (40wt.%) and ultra-pure water (18.2M Ω), corrosion temperature is 25 DEG C;
(6) black silicon sample is placed in watery hydrochloric acid rinsing to remove the residual Ni of black silicon;
(7) finally with a large amount of ultra-pure waters, sample is rinsed.
When wherein magnetron sputtering method prepares Ni film, power used is 150W, and underlayer temperature is room temperature, and Ar flow is 20sccm, and substrate disc rotating speed is 10r/min.
Result: within the scope of 200 ~ 1000nm, average reflectance is 2.12%.
embodiment 4
(1) acetone, ethanol and ultra-pure water is first used successively to each ultrasonic cleaning 10min of monocrystalline silicon piece, to remove
Silicon chip surface greasy dirt and metal ion;
(2) then silicon chip is put into the NaOH solution that mass percent is 25%, at 85 DEG C, corrode 5min, remove the damage layer on upper and lower two surfaces of silicon chip;
(3) then will go the silicon chip of damage layer to put into NaOH solution that mass percent is 2.5%, corrodes 30min thus forms pyramidal structure at silicon chip surface at 75 DEG C;
(4) adopt magnetron sputtering method at the Ni film of pyramid surface sputtering one deck 40nm;
(5) H is placed on subsequently
2o
2(40wt.%), carry out chemical corrosion 180s to prepare the black silicon of antireflective nano micro-structural on pyramid in the mixed solution of the volume ratio 1:2:10 of HF (40wt.%) and ultra-pure water (18.2M Ω), corrosion temperature is 50 DEG C;
(6) black silicon sample is placed in watery hydrochloric acid rinsing to remove the residual Ni of black silicon;
(7) finally with a large amount of ultra-pure waters, sample is rinsed.
When wherein magnetron sputtering method prepares Ni film, power used is 150W, and underlayer temperature is room temperature, and Ar flow is 20sccm, and substrate disc rotating speed is 10r/min.
Result: within the scope of 200 ~ 1000nm, average reflectance is 2.21%.
embodiment 5
(1) acetone, ethanol and ultra-pure water is first used successively to each ultrasonic cleaning 10min of monocrystalline silicon piece, to remove
Silicon chip surface greasy dirt and metal ion;
(2) then silicon chip is put into the NaOH solution that mass percent is 25%, at 85 DEG C, corrode 5min, remove the damage layer on upper and lower two surfaces of silicon chip;
(3) magnetron sputtering method is adopted not prepare pyramidal silicon chip surface and sputter the Ni film of one deck 20nm;
(4) H is placed on subsequently
2o
2(40wt.%), carry out chemical corrosion 30s to prepare the black silicon of antireflective nano micro-structural in the mixed solution of the volume ratio 1:2:10 of HF (40wt.%) and ultra-pure water (18.2M Ω), corrosion temperature is 25 DEG C;
(5) black silicon sample is placed in watery hydrochloric acid rinsing to remove the residual Ni of black silicon;
(6) finally with a large amount of ultra-pure waters, sample is rinsed.
When wherein magnetron sputtering method prepares Ni film, power used is 150W, and underlayer temperature is room temperature, and Ar flow is 20sccm, and substrate disc rotating speed is 10r/min.
Result: within the scope of 200 ~ 1000nm, average reflectance is 4.95%.
embodiment 6
(1) acetone, ethanol and ultra-pure water is first used successively to each ultrasonic cleaning 10min of monocrystalline silicon piece, to remove
Silicon chip surface greasy dirt and metal ion;
(2) then silicon chip is put into the NaOH solution that mass percent is 25%, at 85 DEG C, corrode 5min, remove the damage layer on upper and lower two surfaces of silicon chip;
(3) then will go the silicon chip of damage layer to put into NaOH solution that mass percent is 2.5%, corrodes 30min thus forms pyramidal structure at silicon chip surface at 75 DEG C;
(4) adopt magnetron sputtering method at the Ni film of pyramid surface sputtering one deck 20nm;
(5) H is placed on subsequently
2o
2(40wt.%), carry out chemical corrosion 180s to prepare the black silicon of antireflective nano micro-structural on pyramid in the mixed solution of the volume ratio 1:2:10 of HF (40wt.%) and ultra-pure water (18.2M Ω), corrosion temperature is 25 DEG C;
(6) black silicon sample is placed in watery hydrochloric acid rinsing to remove the residual Ni of black silicon;
(7) finally with a large amount of ultra-pure waters, sample is rinsed.
When wherein magnetron sputtering method prepares Ni film, power used is 150W, and underlayer temperature is room temperature, and Ar flow is 20sccm, and substrate disc rotating speed is 10r/min.
Result: within the scope of 200 ~ 1000nm, average reflectance is 2.19%.
Claims (3)
1. Ni assistant chemical etch prepares a method for black silicon, it is characterized in that, comprises the steps:
(1) acetone, ethanol and ultra-pure water is first used successively to each ultrasonic cleaning 10min of monocrystalline silicon piece;
(2) then silicon chip is put into the NaOH solution that mass percent is 25%, at 85 DEG C, corrode 5min;
(3) silicon chip is put into the NaOH solution that mass percent is 2% ~ 2.5%, temperature is 70 ~ 85 DEG C of water-bath corrosion 20 ~ 40min, thus forms pyramidal structure at silicon chip surface;
(4) adopt magnetron sputtering method at pyramid surface sputtering layer of Ni film;
(5) H is placed on subsequently
2o
2, HF and ultra-pure water mixed solution in carry out chemical corrosion to prepare the black silicon of antireflective nano micro-structural on pyramid; Wherein chemical corrosion condition is the H of 40wt.%
2o
2, the HF of 40wt.% and resistance is the ultra-pure water of 18.2M Ω, the volume ratio of above-mentioned three is 1:2:0.25 ~ 1:2:23, and etching time is 30s ~ 300s, and corrosion temperature is 0 ~ 80 DEG C;
(6) black silicon sample is placed in watery hydrochloric acid rinsing to remove the residual Ni of black silicon;
(7) finally with ultra-pure water, sample is rinsed.
2. a kind of Ni assistant chemical etch according to claim 1 prepares the method for black silicon, it is characterized in that the technique that described magnetron sputtering method prepares Ni film is: power used is 150W, underlayer temperature is room temperature, and Ar flow is 20sccm, and substrate disc rotating speed is 10r/min.
3. a kind of Ni assistant chemical etch according to claim 1 prepares the method for black silicon, it is characterized in that the Ni film thickness described in step (4) is 5 ~ 200nm.
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| CN102051618A (en) * | 2010-11-05 | 2011-05-11 | 云南师范大学 | Method for preparing black silicon based on liquid-phase chemical reaction |
| CN102173376A (en) * | 2011-02-25 | 2011-09-07 | 复旦大学 | Preparation method for small silicon-based nano hollow array with orderly heights |
| CN102593261A (en) * | 2012-03-14 | 2012-07-18 | 中国科学院微电子研究所 | Silicon substrate nano-structure for solar cell and preparing method thereof |
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| CN102051618A (en) * | 2010-11-05 | 2011-05-11 | 云南师范大学 | Method for preparing black silicon based on liquid-phase chemical reaction |
| CN102173376A (en) * | 2011-02-25 | 2011-09-07 | 复旦大学 | Preparation method for small silicon-based nano hollow array with orderly heights |
| CN102593261A (en) * | 2012-03-14 | 2012-07-18 | 中国科学院微电子研究所 | Silicon substrate nano-structure for solar cell and preparing method thereof |
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