CN102931241B - A kind of crystalline silicon component - Google Patents
A kind of crystalline silicon component Download PDFInfo
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- CN102931241B CN102931241B CN201210486955.3A CN201210486955A CN102931241B CN 102931241 B CN102931241 B CN 102931241B CN 201210486955 A CN201210486955 A CN 201210486955A CN 102931241 B CN102931241 B CN 102931241B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention discloses a kind of crystalline silicon component, the cell piece comprising substrate and be connected in series on aforesaid substrate, cell piece is ranks arrangements, and the line number of cell piece is less than columns, and has been arranged in parallel bypass diode between n and n+1 row, and n is odd number.Visible, in the present invention, cell piece have employed the horizontal type-setting mode that line number is less than columns, and bypass diode has been arranged in parallel between n and n+1 row, longitudinal type-setting mode of columns is greater than compared to line number of the prior art, the quantity of the cell piece in parallel with bypass diode reduces, local hot spot effect is there is at crystalline silicon component provided by the invention, and when making corresponding bypass diode conducting, reduced by the quantity of the cell piece of short circuit, thus the reduction of the power output of whole assembly also correspondingly reduces.
Description
Technical field
The present invention relates to crystalline silicon component technical field, particularly the arrangement mode of cell piece in a kind of crystalline silicon component.
Background technology
In the actual use procedure of crystalline silicon component, when some cell piece is wherein owing to breaking, or when local the reason such as to be blocked and to cause its electrical property seriously not mate with other cell piece normally worked, these cell pieces not only can not contribute to the power stage of assembly, actual power consumption unit can be become on the contrary, consume the electric energy that other cell piece produces.More seriously, the heat that the cell piece power consumption of these off resonances produces may cause them self to be burnt, thus causes whole crystalline silicon component to be scrapped.This is the hot spot effect of assembly.
Cell piece is adopted to the crystalline silicon component of pure series system, for preventing the generation of hot spot effect, the method generally adopted now installs bypass diode additional in the terminal box of component power output, these bypass diodes can the conducting when some cell piece generation hot spot effect, thus by its short circuit, stop it to continue power consumption and heating, and when off resonance cell piece recovers normally to work, these bypass diodes again can unidirectional cutoff and disconnecting, and component power exports also recovers normal.
Existing conventional 60 and 72 crystalline silicon components, its cell piece is that pure series system connects, and take longitudinal type-setting mode of 6 × 10 and 6 × 12, i.e. 6 row 10 row and 6 row 12 row, 3 or 3 groups of bypass diodes are generally comprised in their power take-off terminal boxes, each or often organize bypass diode and two go here and there cell piece in parallel (for 60 chip modules, each or often group bypass diode in parallel with 20 cell pieces; For 72 chip modules, each or often organize bypass diode in parallel with 24 cell pieces).
Under above-mentioned access way, when a certain cell piece generation hot spot effect cause bypass diode to be had an effect and conducting time, that two strings cell piece that will cause this cell piece place (is all 20 cell pieces for 60 chip modules by short circuit, be 24 cell pieces for 72 chip modules), namely the cell piece of assembly 1/3 can be caused by short circuit, and assembly power output also can decrease 1/3.Due to a slice or a few cell pieces electrical property off resonance and so large reduction is caused to the power stage of monoblock unit, obviously have a strong impact on the utilization of assembly.
Therefore, how to provide a kind of crystalline silicon component, when crystal silicon component causes bypass diode conducting because there is local hot spot effect, can reduce the reduction of monoblock unit power stage, be the technical problem that those skilled in the art need solution badly.
Summary of the invention
In view of this, the technical problem to be solved in the present invention, for providing a kind of crystalline silicon component, when crystal silicon component causes bypass diode conducting because there is local hot spot effect, can reduce the reduction of monoblock unit power stage.
For solving the problems of the technologies described above, the invention provides a kind of crystalline silicon component, the cell piece comprising substrate and be connected in series on the substrate, described cell piece is ranks arrangements, and the line number of described cell piece is less than columns; And bypass diode has been arranged in parallel between n and n+1 row, n is odd number.
Preferably, in above-mentioned crystalline silicon component, described cell piece is 60, arranges arrangement, n=1,3,5,7,9 in 6 row 10.
Preferably, in above-mentioned crystalline silicon component, described cell piece is 72, arranges arrangement, n=1,3,5,7,9,11 in 6 row 12.
Relative to prior art, technique effect of the present invention is:
Crystalline silicon component provided by the invention, the cell piece comprising substrate and be connected in series on aforesaid substrate, cell piece is ranks arrangements, and the line number of cell piece is less than columns, and has been arranged in parallel bypass diode between n and n+1 row, and n is odd number.
Visible, in the present invention, cell piece have employed the horizontal type-setting mode that line number is less than columns, and bypass diode has been arranged in parallel between n and n+1 row, longitudinal type-setting mode of columns is greater than compared to line number of the prior art, the quantity of the cell piece in parallel with bypass diode reduces, local hot spot effect is there is at crystalline silicon component provided by the invention, and when making corresponding bypass diode conducting, reduced by the quantity of the cell piece of short circuit, thus the reduction of the power output of whole assembly also correspondingly reduces.
In sum, crystalline silicon component provided by the invention, when crystal silicon component causes bypass diode conducting because there is local hot spot effect, can reduce the reduction of monoblock unit power stage.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only embodiments of the invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to the accompanying drawing provided.
The schematic diagram of 60 crystalline silicon component type-setting modes that Fig. 1 provides for the embodiment of the present invention;
The structural representation of the type-setting mode of crystalline silicon component of Fig. 2 for providing in Fig. 1 embodiment;
Fig. 3 is that the A of crystalline silicon component in Fig. 2 holds partial enlarged drawing.
In upper figure, the corresponding relation between Reference numeral and component names is:
1 substrate; 2 cell pieces; 3 bypass diodes; 4 busbars.
Embodiment
Core of the present invention, for providing a kind of crystalline silicon component, when crystal silicon component causes bypass diode conducting because there is local hot spot effect, can reduce the reduction of monoblock unit power stage.
In order to make those skilled in the art understand technical scheme of the present invention better, below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.Obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
The crystalline silicon component provided by the invention that the embodiment of the present invention provides, the cell piece 2 comprising substrate 1 and be connected in series on aforesaid substrate 1, cell piece 2 is arrangement in ranks, and the line number of cell piece 2 is less than columns, and between n and n+1 row, to be arranged in parallel bypass diode 3, n be odd number.
Visible, in the present invention, cell piece 2 have employed the horizontal type-setting mode that line number is less than columns, and bypass diode 3 has been arranged in parallel between n and n+1 row, longitudinal type-setting mode of columns is greater than compared to line number of the prior art, the quantity of the cell piece 2 in parallel with bypass diode 3 reduces, local hot spot effect is there is at crystalline silicon component provided by the invention, and when making corresponding bypass diode 3 conducting, reduced by the quantity of the cell piece 2 of short circuit, thus the reduction of the power output of whole assembly also correspondingly reduces.
In sum, crystalline silicon component provided by the invention, when crystal silicon component causes bypass diode 3 conducting because there is local hot spot effect, can reduce the reduction of monoblock unit power stage.
Please refer to Fig. 1, the schematic diagram of 60 crystalline silicon component type-setting modes that Fig. 1 provides for the embodiment of the present invention.
As shown in Figure 1, the crystalline silicon component that a kind of embodiment of the present invention provides comprises 60 cell pieces 2, its type-setting mode is: 60 cell pieces 2 arrange arrangement in 6 row 10, between first row and secondary series, between the 3rd row and the 4th row, between the 5th row and the 6th row, between the 7th row and the 8th row, between the 9th row and the tenth row, be all arranged in parallel bypass diode 3.
In such an embodiment, it is in parallel that each bypass diode 3 and two arranges totally 12 cell pieces, when there is local hot spot effect in crystalline silicon component, corresponding bypass diode 3 conducting, be 12 by the quantity of the cell piece of short circuit, the crystalline silicon component of 60 in prior art is 20 by the quantity of the cell piece of short circuit, namely decrease 8, thus the reduction of the power output of whole assembly also correspondingly reduces 13.3%.
Please refer to Fig. 2 and Fig. 3, the structural representation of the type-setting mode of crystalline silicon component of Fig. 2 for providing in Fig. 1 embodiment.Fig. 3 is that the A of crystalline silicon component in Fig. 2 holds partial enlarged drawing.
Please refer to Fig. 2 and Fig. 3, the concrete connected mode of the crystalline silicon component of 60 cell pieces 2 provided by the invention is:
60 cell pieces 2 are arranged arrangement to arrange on substrate 1 in 6 row 10,6 cell pieces in often arranging are connected in series by interconnecting strip, hold at the B of crystalline silicon component, be connected by busbar 4 between n row arrange with n+1, namely between the 1st, 2 row; 3rd, between 4 row; 5th, between 6 row; 7th, between 8 row; 9th, busbar 4 is adopted to connect between 10 row.
Hold at the A of crystalline silicon component, the 1st row cell piece accesses the positive pole of output end wiring box by No. 1 lead-out wire; 2nd row and the 3rd row cell piece are by No. 2 lead-out wire thereto relevant positions; 4th row and the 5th row cell piece are by No. 3 lead-out wire thereto relevant positions.To similar above, the 10th row cell piece is by No. 6 lead-out wire thereto negative poles; 8th row and the 9th row cell piece are by No. 5 lead-out wire thereto relevant positions; 6th row and the 7th row cell piece are by No. 4 lead-out wire thereto relevant positions.Each lead-out wire stacks, and centre keeps apart with the EPE isolating bar that insulation property are good.
The access way of bypass diode 3 is: in terminal box, install one or one group of bypass diode 3 respectively additional between No. 1 and No. 2 lead-out wires, between No. 2 and No. 3 lead-out wires, between No. 3 and No. 4 lead-out wires, between No. 4 and No. 5 lead-out wires, between No. 5 and No. 6 lead-out wires.So, under type-setting mode of the present invention, in output end wiring box, install 5 or 5 groups of bypass diodes 3 altogether additional.
It should be noted that, No. 1 lead-out wire connects the positive pole of terminal box, No. 10 lead-out wires connect the negative pole of terminal box, other lead-out wires connect the relevant position of terminal box respectively, this relevant position refers to, when the indirect bypass diode 3 of two lead-out wires, the two adjacent row cell pieces that this bypass diode 3 can be connected with two lead-out wires are in parallel.
The crystalline silicon component that another kind of embodiment of the present invention provides comprises 72 cell pieces, its type-setting mode is: 72 cell pieces are that 6 row 12 arrange arrangement, between first row and secondary series, between the 3rd row and the 4th row, between the 5th row and the 6th row, between the 7th row and the 8th row, between the 9th row and the tenth row, between the 11 row and the 12 row, be all arranged in parallel bypass diode 3.
In such an embodiment, it is in parallel that each bypass diode 3 and two arranges totally 12 cell pieces, when there is local hot spot effect in crystalline silicon component, corresponding bypass diode 3 conducting, be 12 by the quantity of the cell piece of short circuit, the crystalline silicon component of 72 in prior art is 24 by the quantity of the cell piece of short circuit, namely decrease 12, thus the reduction of the power output of whole assembly also correspondingly reduces 16.7%.
The mode of connection of the mode of connection of the present embodiment and the crystalline silicon component of above-mentioned 60 cell pieces is similar, does not repeat them here.
In this specification, each embodiment adopts the mode of going forward one by one to describe, and what each embodiment stressed is the difference with other embodiments, between each embodiment identical similar portion mutually see.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the present invention.Apply specific case herein to set forth principle of the present invention and execution mode, the explanation of above embodiment just understands method of the present invention and core concept thereof for helping.It should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention, can also carry out some improvement and modification to the present invention, these improve and modify and also fall in the protection range of the claims in the present invention.
Claims (3)
1. a crystalline silicon component, the cell piece (2) comprising substrate (1) and be connected in series on described substrate (1), described cell piece (2) is arranged in ranks, it is characterized in that, the line number of described cell piece (2) is less than columns, and bypass diode (3) has been arranged in parallel between n and n+1 row, n is odd number, described cell piece (2) adopts horizontal type-setting mode, 1st row cell piece accesses the positive pole of output end wiring box by No. 1 lead-out wire, 2nd row and the 3rd row cell piece access the relevant position of described terminal box by No. 2 lead-out wires, 4th row and the 5th row cell piece access the relevant position of described terminal box by No. 3 lead-out wires, by that analogy, 10th row cell piece is by No. 6 lead-out wire thereto negative poles, described No. 1 lead-out wire, described No. 2 lead-out wires, described No. 3 lead-out wires, the lead-out wire of described No. 6 lead-out wires and other row stacks, described No. 1 lead-out wire, described No. 2 lead-out wires, described No. 3 lead-out wires, keep apart with the EPE isolating bar that insulation property are good in the middle of the lead-out wire of described No. 6 lead-out wires and other row.
2. crystalline silicon component according to claim 1, is characterized in that, described cell piece (2) is 60, arranges arrangement, n=1,3,5,7,9 in 6 row 10.
3. crystalline silicon component according to claim 1, is characterized in that, described cell piece (2) is 72, arranges arrangement, n=1,3,5,7,9,11 in 6 row 12.
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| CN201210486955.3A CN102931241B (en) | 2012-11-26 | 2012-11-26 | A kind of crystalline silicon component |
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| CN201210486955.3A CN102931241B (en) | 2012-11-26 | 2012-11-26 | A kind of crystalline silicon component |
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| CN102931241A CN102931241A (en) | 2013-02-13 |
| CN102931241B true CN102931241B (en) | 2015-11-11 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103441163B (en) * | 2013-09-06 | 2016-08-17 | 友达光电股份有限公司 | solar panel |
| CN104253171A (en) * | 2014-09-09 | 2014-12-31 | 奥特斯维能源（太仓）有限公司 | Solar cell module with integrated optimizer |
| CN106026907A (en) * | 2016-03-25 | 2016-10-12 | 王淑娟 | Improved silicon chip base solar cell module |
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| US4567316A (en) * | 1983-03-01 | 1986-01-28 | Siemens Aktiengesellschaft | Solar cell module |
| CN102024865A (en) * | 2009-09-23 | 2011-04-20 | 江苏尚昆光伏科技有限公司 | Connection method of solar photovoltaic module battery plate |
| CN102044587A (en) * | 2009-10-15 | 2011-05-04 | 无锡尚德太阳能电力有限公司 | Solar module |
| CN102664205A (en) * | 2012-05-22 | 2012-09-12 | 天津力神电池股份有限公司 | Anti-shielding solar battery assembly based on multi-diode module |
| CN202549853U (en) * | 2012-01-13 | 2012-11-21 | 比亚迪股份有限公司 | Solar battery module |
| CN202948954U (en) * | 2012-11-26 | 2013-05-22 | 晶科能源有限公司 | Crystalline silicon assembly |
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2012
- 2012-11-26 CN CN201210486955.3A patent/CN102931241B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4567316A (en) * | 1983-03-01 | 1986-01-28 | Siemens Aktiengesellschaft | Solar cell module |
| CN102024865A (en) * | 2009-09-23 | 2011-04-20 | 江苏尚昆光伏科技有限公司 | Connection method of solar photovoltaic module battery plate |
| CN102044587A (en) * | 2009-10-15 | 2011-05-04 | 无锡尚德太阳能电力有限公司 | Solar module |
| CN202549853U (en) * | 2012-01-13 | 2012-11-21 | 比亚迪股份有限公司 | Solar battery module |
| CN102664205A (en) * | 2012-05-22 | 2012-09-12 | 天津力神电池股份有限公司 | Anti-shielding solar battery assembly based on multi-diode module |
| CN202948954U (en) * | 2012-11-26 | 2013-05-22 | 晶科能源有限公司 | Crystalline silicon assembly |
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