CN102928997A - Terahertz wave switch based on gap structure - Google Patents

Abstract

The invention discloses a terahertz wave switch based on a slot structure. It includes signal input end, signal output end, substrate, input end slot, semicircle coupling slot area, short connection line slot, left open ring slot, ellipse coupling slot, output slot, long connection line slot, right open ring slot , rectangular coupling slit, laser input end; there are input end slit, semicircular coupling slit area, short connection line slit, left open ring slit, ellipse coupling slit, output end slit, long connection line slit, right open ring on the substrate The slot, the rectangular coupling slot, the signal is input from the signal input end and output from the signal output end. The terahertz wave switch based on the slit structure of the present invention has the advantages of simple structure, high extinction ratio, small size, low cost, easy manufacture, easy integration, etc., and can be used in the fields of terahertz wave imaging, medical analysis, terahertz wave communication, etc. application requirements.

Description

Terahertz wave switch based on gap structure

technical field

The invention relates to a terahertz wave switch, in particular to a terahertz wave switch based on a slot structure.

Background technique

Terahertz (THz for short) radiation is a general term for electromagnetic radiation in a specific band, usually it refers to electromagnetic waves with a frequency between 0.1THz and 10THz. Until the mid-1980s, people knew little about the electromagnetic wave characteristics of this frequency band, forming the so-called "Terahertz Gap" (Terahertz Gap) between far-infrared rays and millimeter waves. The spectrum is between microwave and infrared radiation; in the field of electronics, terahertz radiation is called millimeter wave or submillimeter wave; in the field of optics, it is also called far infrared ray; The energy is between electrons and photons. Extensive research on the terahertz band began in the mid-1980s after the generation of pulsed terahertz technology based on ultrafast optoelectronics. With the rapid development of low-scale semiconductor technology, ultrafast laser technology and ultrafast optoelectronic technology, terahertz technology has shown great application potential, and has great significance in the fields of physics, chemistry, biology, materials, medicine, communication, etc. Scientific value and broad application prospects. The terahertz band has the characteristics of high frequency, wide bandwidth, and a large number of channels, and is especially suitable for local area networks and broadband mobile communications. Using terahertz communication can achieve a wireless transmission speed of 10Gbps, which is hundreds or even thousands of times faster than the current ultra-wideband technology. Terahertz wireless communication can provide multiple data channels with Gbps or even greater capacity, and the data bandwidth will exceed existing wireless protocols, such as IEEE820.11b.

In terahertz technology and applications, the research on terahertz wave functional devices is an important link in the development of terahertz technology. Although the research on terahertz wave functional devices has been gradually carried out at home and abroad, terahertz wave functional devices, as the key and difficult point in the application of terahertz wave science and technology, still need to invest a lot of manpower and material resources for in-depth exploration and research. The terahertz wave switch is a very important terahertz wave device, which is used to control the transmission of terahertz waves. Existing terahertz wave switches are often complex in structure, bulky and expensive, so it is necessary to design a terahertz wave switch with simple structure, small size, easy fabrication, and high extinction ratio to meet the needs of future terahertz wave technology applications.

Contents of the invention

The object of the present invention is to provide a terahertz wave switch based on a slot structure with a simple structure and small size in order to overcome the disadvantages of complex structure, difficult actual manufacture and high cost in the prior art.

In order to achieve the above object, technical scheme of the present invention is as follows:

The terahertz wave switch based on the slot structure includes signal input end, signal output end, substrate, input end slot, semicircular coupling slot area, short connection line slot, left open ring slot, ellipse coupling slot, output end slot, long connection line Slot, right open ring slot, rectangular coupling slot, laser input end; the base plate is equipped with input slot, semicircle coupling slot area, short connecting line slot, left open ring slot, ellipse coupling slot, output slot, long connection Line gap, right open ring gap, rectangular coupling gap, the semicircle coupling gap area is two left and right half rings set in reverse, the left half ring lower end, the left half ring upper end, the right semi ring ring in the semicircle coupling gap area The lower end and the upper end of the right semi-circular ring correspond to the input end gap, one end of the short connection line gap, the output end gap and one end of the long connection line gap, and the other end of the short connection line gap is connected to the left opening ring gap, which is a circle away from the left opening circle. There is an elliptical coupling gap at the upper end of the ring gap at 20 μm to 30 μm, the other end of the long connection line gap is connected to the right open ring gap, and a rectangular coupling gap is set between the output end gap and the long connection line gap, and the laser is irradiated vertically on the rectangular coupling gap. Gap area; the terahertz wave is input at the input end, and under the condition that there is no external laser irradiation on the rectangular coupling slit area, the terahertz wave with a frequency of 0.40THz passes through the semicircular coupling slit area and the output end slit, and is directly output from the signal output end. When the rectangular coupling slit area is irradiated with an external laser, the terahertz wave with a frequency of 0.40THz is coupled into the elliptical coupling slit area and the rectangular coupling slit area, and cannot be output from the signal output port, and the transmission of the terahertz wave with a frequency of 0.40THz is realized. break function.

The length of the substrate is 2820 μm-2850 μm, the width is 1100 μm-1200 μm, and the height is 300 μm-400 μm. The depth of the gap is 100 μm-150 μm, and the width of the gap is 60 μm-70 μm. The length of the input slot is 700 μm to 800 μm; the radius of the outer semicircle of the semicircular coupling slot area is 350 μm to 400 μm. The gap length of the short connection line is 100 μm-150 μm. The outer ring radii of the left and right open ring gaps are both 100 μm to 200 μm, and the inner ring radii are both 40 μm to 140 μm; the major axis of the outer ellipse of the elliptical coupling gap is 200 μm to 400 μm, The short axis is 150μm~200μm. The length of the output end gap is 1400 μm-1600 μm; the length of the long connection line gap is 700 μm-800 μm. The outer frame length and width of the rectangular coupling gap are 660 μm-700 μm and 500 μm-540 μm respectively.

The terahertz wave switch based on the slit structure of the present invention has the advantages of simple structure, high extinction ratio, small size, low cost, easy manufacture, easy integration, etc., and can be used in the fields of terahertz wave imaging, medical analysis, terahertz wave communication, etc. application requirements.

Description of drawings:

Figure 1 is a schematic structural diagram of a terahertz wave switch based on a slot structure;

Fig. 2 is a performance curve diagram of the terahertz wave switch-on state based on the slot structure;

Fig. 3 is a performance curve diagram of the terahertz wave switch based on the slit structure in the off state.

Detailed ways

As shown in Figure 1, the terahertz wave switch based on the slot structure includes a signal input terminal 1, a signal output terminal 2, a substrate 3, an input terminal slot 4, a semicircular coupling slot area 5, a short connecting line slot 6, and a left open ring slot 7. Elliptical coupling slot 8, output slot 9, long connecting line slot 10, right opening ring slot 11, rectangular coupling slot 12, laser input end 13; substrate 3 is provided with input slot 4, semicircular coupling slot area 5 , short connection line gap 6, left open circular ring gap 7, elliptical coupling gap 8, output end gap 9, long connecting line gap 10, right open circular ring gap 11, rectangular coupling gap 12, semicircular coupling gap area 5 is reverse The left and right semi-circular rings are set, the lower end of the left semi-circular ring, the upper end of the left semi-circular ring, the lower end of the right semi-circular ring, and the upper end of the right semi-circular ring in the semi-circular coupling gap area 5 respectively correspond to the input end gap 4 and the short connection line gap One end of 6, the output end gap 9 is connected to one end of the long connection line gap 10, the other end of the short connection line gap 6 is connected to the left open ring gap 7, and an elliptical coupling gap is set at 20 μm~30 μm from the upper end of the left open ring gap 7 8. The other end of the long connecting line slit 10 is connected to the right open ring slit 11, and a rectangular coupling slit 12 is set between the output end slit 9 and the long connecting line slit 10, and the laser is vertically irradiated on the area of the rectangular coupling slit 12; terahertz Wave input terminal 1 is input, and under the condition that there is no external laser irradiation on the rectangular coupling slit 12 area, the terahertz wave with a frequency of 0.40 THz passes through the semicircular coupling slit area 5 and the output terminal slit 9, and is directly output from the signal output terminal 2, and then When the area of the rectangular coupling slit 12 is irradiated with an external laser, the terahertz wave with a frequency of 0.40 THz is coupled into the area of the elliptical coupling slit 8 and the area of the rectangular coupling slit 12, and cannot be output from the signal output terminal 2, realizing the terahertz wave with a frequency of 0.40 THz. On-off function of Hertzian waves.

The length of the substrate 3 is 2820 μm-2850 μm, the width is 1100 μm-1200 μm, and the height is 300 μm-400 μm. The depth of the gap is 100 μm-150 μm, and the width of the gap is 60 μm-70 μm. The length of the input slot 4 is 700 μm-800 μm; the radius of the outer semicircle of the semicircular coupling slot area 5 is 350 μm-400 μm. The length of the short connecting line slit 6 is 100 μm-150 μm. The outer ring radii of the left open circular gap 7 and the right open circular gap 11 are both 100 μm to 200 μm, and the inner ring radii are both 40 μm to 140 μm; the major axis of the outer ellipse of the elliptical coupling gap 8 is 200 μm ~400μm, the minor axis is 150μm~200μm. The length of the output end slit 9 is 1400 μm-1600 μm; the length of the long connection line slit 10 is 700 μm-800 μm. The outer frame length and width of the rectangular coupling slit 12 are 660 μm-700 μm and 500 μm-540 μm respectively.

Example 1

The length of the substrate is 2820 μm, the width is 1100 μm, and the height is 300 μm. The depth of the slit was 150 μm, and the width of the slit was 60 μm. The length of the input slot is 700 μm; the outer semicircle radius of the semicircular coupling slot area is 350 μm. The gap length of the short connection line is 100 μm. The outer ring radius of the left open ring gap and the right open ring gap are both 100 μm, and the inner ring radius is 40 μm; there is an elliptical coupling gap 20 μm away from the upper end of the left open ring gap, and the major axis of the outer ellipse of the elliptical coupling gap is 200 μm, and the minor axis is 150 μm. The length of the slot at the output end is 1400 μm; the length of the slot at the long connection line is 800 μm. The length and width of the outer frame of the rectangular coupling slit are 660 μm and 540 μm, respectively. The terahertz wave signal is input from the signal input terminal, and the terahertz wave of a specific frequency is directly output from the signal output terminal without external laser irradiation; when the external laser irradiates the rectangular coupling gap area, the terahertz wave of the specific frequency Being coupled into the elliptical coupling slit area and the rectangular coupling slit area, the terahertz wave signal cannot be output from the signal output port. The performance curves of the terahertz wave switch based on the gap structure in the on and off states are shown in Figure 2 and Figure 3. Under the condition of no external laser irradiation, the transmission rate of the terahertz wave with the frequency f=0.40THz is as high as 0.99, The switch is on; when an external laser irradiates the rectangular coupling gap region, the transmission rate of f=0.40THz terahertz wave is only 0.01, and the switch is off. This shows that the designed terahertz wave switch based on the gap structure has excellent performance.

Claims (8)

1. the THz wave switch based on gap structure is characterized in that comprising signal input part (1), signal output part (2), substrate (3), input end slit (4), semicircle coupling gap area (5), short connecting line slit (6), left opening annular slot (7), oval coupling slit (8), output terminal slit (9), long connecting line slit (10), right opening annular slot (11), rectangle coupling slit (12), laser input end (13); Substrate (3) is provided with input end slit (4), semicircle coupling gap area (5), short connecting line slit (6), left opening annular slot (7), oval coupling slit (8), output terminal slit (9), long connecting line slit (10), right opening annular slot (11), rectangle coupling slit (12), semicircle coupling gap area (5) be oppositely setting about two semicircular ring, the left semicircle ring lower end of semicircle coupling gap area (5), left semicircle ring upper end, right semi-circle ring lower end, right semi-circle ring upper end is corresponding and input end slit (4) respectively, short connecting line slit (6) one ends, output terminal slit (9) links to each other with long connecting line slit (10) one ends, the other end in short connecting line slit (6) is connected with left opening annular slot (7), be provided with oval coupling slit (8) from 20 μ m ~ 30 μ m places, left opening annular slot (7) upper end, long connecting line slit (10) other end is connected with right opening annular slot (11), be provided with rectangle coupling slit (12) between output terminal slit (9) and the long connecting line slit (10), add laser vertical and be radiated at rectangle coupling zone, slit (12); THz wave input end (1) input, under the condition that does not add zone, Ear Mucosa Treated by He Ne Laser Irradiation rectangle coupling slit (12), frequency is the THz wave process semicircle coupling gap area (5) of 0.40THz, behind the output terminal slit (9), directly export from signal output part (2), when adding zone, Ear Mucosa Treated by He Ne Laser Irradiation rectangle coupling slit (12), frequency is that the THz wave of 0.40THz is coupled into zone, oval coupling slit (8) and rectangle coupling zone, slit (12), can not from signal output part (2) output, realize to frequency being the on-off function of the THz wave of 0.40THz.

2. a kind of THz wave switch based on gap structure according to claim 1, the length that it is characterized in that described substrate (3) is 2820 μ m ~ 2850 μ m, width is 1100 μ m ~ 1200 μ m, highly is 300 μ m ~ 400 μ m.

3. a kind of THz wave switch based on gap structure according to claim 1, the degree of depth that it is characterized in that described slit is 100 μ m ~ 150 μ m, the width in slit is 60 μ m ~ 70 μ m.

4. a kind of THz wave switch based on gap structure according to claim 1, the length that it is characterized in that described input end slit (4) is 700 μ m ~ 800 μ m; Outer half radius of circle of described semicircle coupling gap area (5) is 350 μ m ~ 400 μ m.

5. a kind of THz wave switch based on gap structure according to claim 1 is characterized in that described short connecting line slit (6) length is 100 μ m ~ 150 μ m.

6. a kind of THz wave switch based on gap structure according to claim 1, the outer shroud radius that it is characterized in that described left opening annular slot (7) and right opening annular slot (11) is 100 μ m ~ 200 μ m, and interior ring radius is 40 μ m ~ 140 μ m; The major axis of the outside ellipse in described oval coupling slit (8) is 200 μ m ~ 400 μ m, and minor axis is 150 μ m ~ 200 μ m.

7. a kind of THz wave switch based on gap structure according to claim 1, the length that it is characterized in that described output terminal slit (9) is 1400 μ m ~ 1600 μ m; The length in described long connecting line slit (10) is 700 μ m ~ 800 μ m.

8. a kind of THz wave switch based on gap structure according to claim 1 is characterized in that outer frame length, the width in described rectangle coupling slit (12) is respectively 660 μ m ~ 700 μ m, 500 μ m ~ 540 μ m.

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