CN102928997A - Terahertz wave switch based on gap structure - Google Patents
Terahertz wave switch based on gap structure Download PDFInfo
- Publication number
- CN102928997A CN102928997A CN2012104499626A CN201210449962A CN102928997A CN 102928997 A CN102928997 A CN 102928997A CN 2012104499626 A CN2012104499626 A CN 2012104499626A CN 201210449962 A CN201210449962 A CN 201210449962A CN 102928997 A CN102928997 A CN 102928997A
- Authority
- CN
- China
- Prior art keywords
- slit
- gap
- coupling
- connecting line
- thz wave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Lasers (AREA)
Abstract
The invention discloses a terahertz wave switch based on a gap structure. The terahertz wave switch based on the gap structure comprises a signal input end, a signal output end, a substrate, an input end gap, a semicircular coupling gap area, a short connecting line gap, a left opening circular ring gap, an elliptic coupling gap, an output end gap, a long connecting line gap, a right opening circular ring gap, a rectangular coupling gap and a laser input end. The substrate is provided with the input end gap, the semicircular coupling gap area, the short connecting line gap, the left opening circular ring gap, the elliptic coupling gap, the output end gap, the long connecting line gap, the right opening circular ring gap and the rectangular coupling gap. A signal is input through the signal input end and output through the signal output end. The terahertz wave switch based on the gap structure has the advantages of being simple in structure, high in extinction ratio, small in size, low in cost, convenient to manufacture, easy to integrate and the like. The terahertz wave switch based on the gap structure can meet the requirement of application in the fields of terahertz wave imaging, medical analyses, terahertz wave communication and the like.
Description
Technical field
The present invention relates to the THz wave switch, relate in particular to a kind of THz wave switch based on gap structure.
Background technology
Terahertz (Terahertz is called for short THz) radiation is the general designation to the electromagnetic radiation of a specific band, and it refers to the electromagnetic wave of frequency between 0.1THz ~ 10THz usually.Until before last century the mid-80, people know little about it to the electromagnetic characteristics of this frequency range, formed so-called between far infrared and the millimeter wave " Terahertz space " (Terahertz Gap), from frequency spectrum, terahertz emission in electromagnetic wave spectrum between microwave and infrared radiation; In person in electronics, terahertz emission is called as millimeter wave or submillimeter wave; At optical field, its far ir ray that is otherwise known as; From energy, the energy of terahertz wave band is between electronics and photon.It is after the pulse Terahertz Technology generation of 20th century the mid-80 take ultrafast opto-electronics as the basis that terahertz wave band is studied widely.Develop rapidly along with low yardstick semiconductor technology, ultrafast laser technique and ultrafast photoelectron technology, Terahertz Technology has shown great application potential, has great scientific value and application prospect widely in fields such as physics, chemistry, biology, material, medical science, communications.Terahertz wave band has the frequency height, is with the characteristics such as wide, that the number of channel is many, is particularly suitable for LAN (Local Area Network) and wide-band mobile communication.Can obtain the wireless transmission speed of 10Gbps with Terahertz communication, this is than the fast hundreds of of present super-broadband tech even thousands of times.The Terahertz radio communication can provide Gbps even more jumbo multiple data channel, and data bandwidth will surpass existing wireless protocols, such as IEEE820.11b etc.
In Terahertz Technology and in using, the research of THz wave function element is an important step of Terahertz Technology development.Although the research for the THz wave function element launches gradually both at home and abroad, the Focal point and difficult point during the THz wave function element is used as the THz wave science and technology still needs to drop into a large amount of man power and materials and carries out deep exploration and research.The THz wave switch is a kind of very important THz wave device, is used for the transmission of control THz wave.Therefore existing THz wave switch is complex structure, bulky and expensive often, is necessary to design a kind of simple in structure, and size is little, and is easy to make, and the THz wave switch that extinction ratio is high is used needs to satisfy following THz wave technology.
Summary of the invention
The objective of the invention is in order to overcome the prior art complex structure, the actual fabrication difficulty, the deficiency that cost is high provides a kind of simple in structure, THz wave switch based on gap structure that size is little.
In order to achieve the above object, technical scheme of the present invention is as follows:
THz wave switch based on gap structure comprises signal input part, signal output part, substrate, input end slit, semicircle coupling gap area, short connecting line slit, left opening annular slot, oval coupling slit, output terminal slit, long connecting line slit, right opening annular slot, rectangle coupling slit, laser input end; Substrate is provided with the input end slit, semicircle coupling gap area, short connecting line slit, left opening annular slot, oval coupling slit, the output terminal slit, long connecting line slit, right opening annular slot, rectangle coupling slit, semicircle coupling gap area be oppositely setting about two semicircular ring, the left semicircle ring lower end of semicircle coupling gap area, left semicircle ring upper end, right semi-circle ring lower end, right semi-circle ring upper end is corresponding and input end slit respectively, short connecting line slit one end, the output terminal slit links to each other with long connecting line slit one end, the other end in short connecting line slit is connected with left opening annular slot, be provided with oval coupling slit from 20 μ m ~ 30 μ m places, left opening annular slot upper end, the long connecting line slit other end is connected with right opening annular slot, be provided with rectangle coupling slit between output terminal slit and the long connecting line slit, add laser vertical and be radiated at rectangle coupling gap area; The input of THz wave input end, under the condition that does not add Ear Mucosa Treated by He Ne Laser Irradiation rectangle coupling gap area, frequency is after the THz wave of 0.40THz is passed through semicircle coupling gap area, output terminal slit, directly export from signal output part, when adding Ear Mucosa Treated by He Ne Laser Irradiation rectangle coupling gap area, frequency is that the THz wave of 0.40THz is coupled into oval coupling gap area and rectangle coupling gap area, can not export from signal output part, realize to frequency being the on-off function of the THz wave of 0.40THz.
The length of described substrate is 2820 μ m ~ 2850 μ m, and width is 1100 μ m ~ 1200 μ m, highly is 300 μ m ~ 400 μ m.The degree of depth in described slit is 100 μ m ~ 150 μ m, and the width in slit is 60 μ m ~ 70 μ m.The length in described input end slit is 700 μ m ~ 800 μ m; Outer half radius of circle of described semicircle coupling gap area is 350 μ m ~ 400 μ m.Described short connecting line gap length is 100 μ m ~ 150 μ m.The outer shroud radius of described left opening annular slot and right opening annular slot is 100 μ m ~ 200 μ m, and interior ring radius is 40 μ m ~ 140 μ m; The major axis of the outside ellipse in described oval coupling slit is 200 μ m ~ 400 μ m, and minor axis is 150 μ m ~ 200 μ m.The length in described output terminal slit is 1400 μ m ~ 1600 μ m; The length in described long connecting line slit is 700 μ m ~ 800 μ m.Outer frame length, the width in described rectangle coupling slit are respectively 660 μ m ~ 700 μ m, 500 μ m ~ 540 μ m.
THz wave switch based on gap structure of the present invention has simple in structurely, and extinction ratio is high, and size is little, and cost is low, is convenient to make, be easy to the advantages such as integrated, satisfies in the THz wave imaging medical analysis, the requirement that use in the fields such as THz wave communication.
Description of drawings:
Fig. 1 is based on the structural representation of the THz wave switch of gap structure;
Fig. 2 is based on the performance chart under the logical state of THz wave switch of gap structure;
Fig. 3 is based on the performance chart under the disconnected state of THz wave switch of gap structure.
Embodiment
As shown in Figure 1, the THz wave switch based on gap structure comprises signal input part 1, signal output part 2, substrate 3, input end slit 4, semicircle coupling gap area 5, short connecting line slit 6, left opening annular slot 7, oval coupling slit 8, output terminal slit 9, long connecting line slit 10, right opening annular slot 11, rectangle coupling slit 12, laser input end 13; Substrate 3 is provided with input end slit 4, semicircle coupling gap area 5, short connecting line slit 6, left opening annular slot 7, oval coupling slit 8, output terminal slit 9, long connecting line slit 10, right opening annular slot 11, rectangle coupling slit 12, semicircle coupling gap area 5 be oppositely setting about two semicircular ring, the left semicircle ring lower end of semicircle coupling gap area 5, left semicircle ring upper end, right semi-circle ring lower end, right semi-circle ring upper end is corresponding and input end slit 4 respectively, short connecting line slit 6 one ends, output terminal slit 9 links to each other with long connecting line slit 10 1 ends, the other end in short connecting line slit 6 is connected with left opening annular slot 7, be provided with oval coupling slit 8 from left opening annular slot 7 upper ends, 20 μ m ~ 30 μ m places, long connecting line slit 10 other ends are connected with right opening annular slot 11, be provided with rectangle coupling slit 12 between output terminal slit 9 and the long connecting line slit 10, add laser vertical and be radiated at rectangle coupling 12 zones, slit; 1 input of THz wave input end, under the condition that does not add Ear Mucosa Treated by He Ne Laser Irradiation rectangle coupling 12 zones, slit, frequency is after the THz wave of 0.40THz is passed through semicircle coupling gap area 5, output terminal slit 9, directly from signal output part 2 outputs, when adding 12 zone, Ear Mucosa Treated by He Ne Laser Irradiation rectangle coupling slit, frequency is that the THz wave of 0.40THz is coupled into 8 zones, oval coupling slit and rectangle coupling 12 zones, slit, can not from signal output part 2 outputs, realize to frequency being the on-off function of the THz wave of 0.40THz.
The length of described substrate 3 is 2820 μ m ~ 2850 μ m, and width is 1100 μ m ~ 1200 μ m, highly is 300 μ m ~ 400 μ m.The degree of depth in described slit is 100 μ m ~ 150 μ m, and the width in slit is 60 μ m ~ 70 μ m.The length in described input end slit 4 is 700 μ m ~ 800 μ m; Outer half radius of circle of described semicircle coupling gap area 5 is 350 μ m ~ 400 μ m.Described short connecting line slit 6 length are 100 μ m ~ 150 μ m.The outer shroud radius of described left opening annular slot 7 and right opening annular slot 11 is 100 μ m ~ 200 μ m, and interior ring radius is 40 μ m ~ 140 μ m; The major axis of the outside ellipse in described oval coupling slit 8 is 200 μ m ~ 400 μ m, and minor axis is 150 μ m ~ 200 μ m.The length in described output terminal slit 9 is 1400 μ m ~ 1600 μ m; The length in described long connecting line slit 10 is 700 μ m ~ 800 μ m.Outer frame length, the width in described rectangle coupling slit 12 are respectively 660 μ m ~ 700 μ m, 500 μ m ~ 540 μ m.
Embodiment 1
The length of substrate is 2820 μ m, and width is 1100 μ m, highly is 300 μ m.The degree of depth in slit is 150 μ m, and the width in slit is 60 μ m.The length in input end slit is 700 μ m; Outer half radius of circle of semicircle coupling gap area is 350 μ m.Short connecting line gap length is 100 μ m.The outer shroud radius of left opening annular slot and right opening annular slot is 100 μ m, and interior ring radius is 40 μ m; Be provided with oval coupling slit from 20 μ m places, left opening annular slot upper end, the major axis of the outside ellipse in oval coupling slit is 200 μ m, and minor axis is 150 μ m.The length in output terminal slit is 1400 μ m; The length in long connecting line slit is 800 μ m.Outer frame length, the width in rectangle coupling slit are respectively 660 μ m, 540 μ m.Terahertz wave signal is inputted from signal input part, and under the condition that does not add Ear Mucosa Treated by He Ne Laser Irradiation, the THz wave of characteristic frequency is directly exported from signal output part; When adding Ear Mucosa Treated by He Ne Laser Irradiation rectangle coupling gap area, the THz wave of this characteristic frequency is coupled into oval coupling gap area and rectangle coupling gap area, and terahertz wave signal can not be exported from signal output part.Based on the performance curve under the THz wave switch switching state of gap structure as shown in Figures 2 and 3, without adding under the condition of Ear Mucosa Treated by He Ne Laser Irradiation, frequency be the transfer rate of THz wave of f=0.40THz up to 0.99, switch shows as logical; When adding Ear Mucosa Treated by He Ne Laser Irradiation rectangle coupling gap area, the transfer rate of the THz wave of f=0.40THz is 0.01 only, and switch shows as disconnected.The THz wave switch based on gap structure of this explanation design has good performance.
Claims (8)
1. the THz wave switch based on gap structure is characterized in that comprising signal input part (1), signal output part (2), substrate (3), input end slit (4), semicircle coupling gap area (5), short connecting line slit (6), left opening annular slot (7), oval coupling slit (8), output terminal slit (9), long connecting line slit (10), right opening annular slot (11), rectangle coupling slit (12), laser input end (13); Substrate (3) is provided with input end slit (4), semicircle coupling gap area (5), short connecting line slit (6), left opening annular slot (7), oval coupling slit (8), output terminal slit (9), long connecting line slit (10), right opening annular slot (11), rectangle coupling slit (12), semicircle coupling gap area (5) be oppositely setting about two semicircular ring, the left semicircle ring lower end of semicircle coupling gap area (5), left semicircle ring upper end, right semi-circle ring lower end, right semi-circle ring upper end is corresponding and input end slit (4) respectively, short connecting line slit (6) one ends, output terminal slit (9) links to each other with long connecting line slit (10) one ends, the other end in short connecting line slit (6) is connected with left opening annular slot (7), be provided with oval coupling slit (8) from 20 μ m ~ 30 μ m places, left opening annular slot (7) upper end, long connecting line slit (10) other end is connected with right opening annular slot (11), be provided with rectangle coupling slit (12) between output terminal slit (9) and the long connecting line slit (10), add laser vertical and be radiated at rectangle coupling zone, slit (12); THz wave input end (1) input, under the condition that does not add zone, Ear Mucosa Treated by He Ne Laser Irradiation rectangle coupling slit (12), frequency is the THz wave process semicircle coupling gap area (5) of 0.40THz, behind the output terminal slit (9), directly export from signal output part (2), when adding zone, Ear Mucosa Treated by He Ne Laser Irradiation rectangle coupling slit (12), frequency is that the THz wave of 0.40THz is coupled into zone, oval coupling slit (8) and rectangle coupling zone, slit (12), can not from signal output part (2) output, realize to frequency being the on-off function of the THz wave of 0.40THz.
2. a kind of THz wave switch based on gap structure according to claim 1, the length that it is characterized in that described substrate (3) is 2820 μ m ~ 2850 μ m, width is 1100 μ m ~ 1200 μ m, highly is 300 μ m ~ 400 μ m.
3. a kind of THz wave switch based on gap structure according to claim 1, the degree of depth that it is characterized in that described slit is 100 μ m ~ 150 μ m, the width in slit is 60 μ m ~ 70 μ m.
4. a kind of THz wave switch based on gap structure according to claim 1, the length that it is characterized in that described input end slit (4) is 700 μ m ~ 800 μ m; Outer half radius of circle of described semicircle coupling gap area (5) is 350 μ m ~ 400 μ m.
5. a kind of THz wave switch based on gap structure according to claim 1 is characterized in that described short connecting line slit (6) length is 100 μ m ~ 150 μ m.
6. a kind of THz wave switch based on gap structure according to claim 1, the outer shroud radius that it is characterized in that described left opening annular slot (7) and right opening annular slot (11) is 100 μ m ~ 200 μ m, and interior ring radius is 40 μ m ~ 140 μ m; The major axis of the outside ellipse in described oval coupling slit (8) is 200 μ m ~ 400 μ m, and minor axis is 150 μ m ~ 200 μ m.
7. a kind of THz wave switch based on gap structure according to claim 1, the length that it is characterized in that described output terminal slit (9) is 1400 μ m ~ 1600 μ m; The length in described long connecting line slit (10) is 700 μ m ~ 800 μ m.
8. a kind of THz wave switch based on gap structure according to claim 1 is characterized in that outer frame length, the width in described rectangle coupling slit (12) is respectively 660 μ m ~ 700 μ m, 500 μ m ~ 540 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210449962.6A CN102928997B (en) | 2012-11-12 | 2012-11-12 | Terahertz wave switch based on gap structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210449962.6A CN102928997B (en) | 2012-11-12 | 2012-11-12 | Terahertz wave switch based on gap structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102928997A true CN102928997A (en) | 2013-02-13 |
| CN102928997B CN102928997B (en) | 2014-10-15 |
Family
ID=47643833
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210449962.6A Expired - Fee Related CN102928997B (en) | 2012-11-12 | 2012-11-12 | Terahertz wave switch based on gap structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102928997B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030053785A1 (en) * | 1999-09-15 | 2003-03-20 | Seng-Tiong Ho | Photon transistors |
| US20030219193A1 (en) * | 2001-03-19 | 2003-11-27 | General Instrument Corporation | Monolithic integrated terahertz optical asymmetric demultiplexer |
| JP2006208754A (en) * | 2005-01-28 | 2006-08-10 | Nippon Telegr & Teleph Corp <Ntt> | Optical switch |
| CN101546048A (en) * | 2009-04-23 | 2009-09-30 | 中国计量学院 | Terahertz wave modulating device with light control coupled resonant cavity and method thereof |
| CN101971087A (en) * | 2008-02-29 | 2011-02-09 | 爱立信电话股份有限公司 | Optical signal processing |
-
2012
- 2012-11-12 CN CN201210449962.6A patent/CN102928997B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030053785A1 (en) * | 1999-09-15 | 2003-03-20 | Seng-Tiong Ho | Photon transistors |
| US20030219193A1 (en) * | 2001-03-19 | 2003-11-27 | General Instrument Corporation | Monolithic integrated terahertz optical asymmetric demultiplexer |
| JP2006208754A (en) * | 2005-01-28 | 2006-08-10 | Nippon Telegr & Teleph Corp <Ntt> | Optical switch |
| CN101971087A (en) * | 2008-02-29 | 2011-02-09 | 爱立信电话股份有限公司 | Optical signal processing |
| CN101546048A (en) * | 2009-04-23 | 2009-09-30 | 中国计量学院 | Terahertz wave modulating device with light control coupled resonant cavity and method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102928997B (en) | 2014-10-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104157934B (en) | A kind of ultra broadband artificial surface plasma wave filter | |
| CN104617881A (en) | Terahertz frequency multiplier with multi-level lower waveguide matching structure | |
| CN106788756A (en) | Ultra wide band Larger Dynamic frequency conversion channel based on Microwave photonics | |
| CN103985944A (en) | Converter from coaxial waveguide to manual surface plasma waveguide | |
| CN204925441U (en) | Adjustable frequency terahertz is branching unit now | |
| CN102928997B (en) | Terahertz wave switch based on gap structure | |
| CN105044841A (en) | Terahertz wave polarization beam splitter based on multiple dielectric cylinder structures | |
| CN205081205U (en) | Terahertz frequency band plane interconnection guided wave | |
| CN105372758A (en) | Bar-type terahertz wave polarization beam splitter | |
| CN102902130A (en) | High-speed terahertz wave modulating device and method | |
| CN102928998B (en) | Square spiral-type terahertz wave switch | |
| CN103676215B (en) | Channel shape electricity temperature two regulation and control THz wave switch | |
| CN205376718U (en) | Novel hollow medium of terahertz frequency band pipe loaded medium bars guided wave structure | |
| CN103943964A (en) | Si-based field effect transistor annular terahertz detector antenna based on CMOS manufacturing process | |
| CN103682540A (en) | A symmetry controllable input/output coupling structure | |
| CN107515440B (en) | Terahertz wave single polarization output device of intrinsic gallium arsenide waveguide structure | |
| CN103675998B (en) | Ginseng shape terahertz polarization beam splitter | |
| CN103018927B (en) | Terahertz wave switch of eight-claw ring structure | |
| CN102928920B (en) | Double-right-angle corner waveguide-shaped terahertz wave polarization beam splitter | |
| CN105334574A (en) | Terahertz wave branching unit based on poriform hollow structure | |
| CN105305087A (en) | Button-shaped terahertz wave polarization converter | |
| CN103676000B (en) | Stretcher shape terahertz polarization beam splitter | |
| CN102944941B (en) | TeraHertz wave switch with multiple C-shaped grooves | |
| CN102938483B (en) | Controllable band-pass filter of terahertz waves | |
| CN103675999B (en) | Central circular micro-ring structure terahertz polarization transducer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141015 Termination date: 20171112 |