CN102928103B - Thermometry based on the semiconductor devices that LDMOS technique makes - Google Patents
Thermometry based on the semiconductor devices that LDMOS technique makes Download PDFInfo
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- CN102928103B CN102928103B CN201210413632.1A CN201210413632A CN102928103B CN 102928103 B CN102928103 B CN 102928103B CN 201210413632 A CN201210413632 A CN 201210413632A CN 102928103 B CN102928103 B CN 102928103B
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Abstract
The invention discloses the thermometry of a kind of semiconductor devices made based on LDMOS technique, described semiconductor devices, including LDMOS triode, use identical or different magnitude of voltage (VG) it is loaded into two on-fixed ends of the resistance of LDMOS triode；Two the on-fixed terminal voltage value (V being every time applied to described resistance are calculated further according to Ohm's lawGCurrent value after)；Afterwards according to the conversion relation of electric current Yu temperature, calculate the temperature value of described semiconductor devices.The thermometry of the semiconductor devices that the present invention makes based on LDMOS technique, affects less on the service life of semiconductor devices.
Description
Technical field
The present invention relates to semiconductor applications, concretely relate to a kind of based on the making of LDMOS technique half
The thermometry of conductor device.
Background technology
The making of semiconductor devices generally uses SOI (Silicon on insulator, SOI), bulk silicon (Bulk
Or germanium (Germanium, Ge) is substrate Silicon).Typical semiconductor devices include diode,
Triode.Semiconductor devices, operationally can produce heat, so that including the temperature of semiconductor device inside
Degree raises, to this end, people want to record the temperature value of semiconductor devices.Owing to the temperature of semiconductor devices is to have
Limit, when temperature reaches certain numerical value, semiconductor devices will be breakdown, thus loses semiconductor
The function of device.As it is shown in figure 1, in prior art, the semiconductor made based on LDMOS technique
The thermometry of device, is usually the magnitude of voltage V using height different and is loaded into the grid electricity of triode
The fixing end of two of resistance, calculates each magnitude of voltage after repetitive measurement and is applied to the resistance of triode
The current values of two fixing ends, then by electric current and the conversion relation of temperature, obtain the temperature of semiconductor devices
Angle value.The measuring method of the temperature of this kind of semiconductor devices, its shortcoming is: the most different magnitudes of voltage
Two fixing ends of the resistance being applied to LDMOS triode all the time, thus LDMOS triode one
Directly it is in high level state, then the voltage that this LDMOS triode may repeatedly be added height is different
Value punctures, then make semiconductor devices too early lose corresponding function.It is to say, this kind is measured
Method, affects bigger on the service life of semiconductor devices.
Summary of the invention
The technical problem to be solved be to provide a kind of based on LDMOS technique make partly lead
The thermometry of body device, the service life of semiconductor devices is affected less by this thermometry.
In order to solve above-mentioned technical problem, the technical scheme is that a kind of based on LDMOS technique system
The thermometry of the semiconductor devices made, described semiconductor devices, including LDMOS triode, adopt
Two on-fixed ends of the resistance of LDMOS triode it are loaded into identical or different magnitude of voltage；Again
The electric current after two the on-fixed terminal voltage value being every time applied to described resistance is calculated according to Ohm's law
Value；Afterwards according to the conversion relation of electric current Yu temperature, calculate the temperature value of described semiconductor devices.
Further, said two on-fixed end is the random length interval of described resistance.
Further, said two on-fixed end, including the first on-fixed end and the second on-fixed end.
Further, the substrate of described LDMOS triode uses silicon materials to make.
Further, described silicon materials are bulk silicon.
The invention has the beneficial effects as follows: the temperature of the semiconductor devices that the present invention makes based on LDMOS technique
Measuring method, is also to use to measure current value, further according to the conversion relation of electric current Yu temperature, calculates afterwards
The temperature value of semiconductor devices.Except for the difference that, the method for testing of current value is different.The present invention use identical or
Different magnitudes of voltage is loaded into two on-fixed ends of the resistance of LDMOS triode；Further according to ohm
Law calculates the current value after two the on-fixed terminal voltage value being every time applied to described resistance；And show
There is technology, be that two of the resistance that magnitudes of voltage different for height is loaded into LDMOS triode fix
End.Owing to the resistance of LDMOS triode of the present invention is applied in magnitude of voltage at different length of interval,
The resistance making LDMOS triode applies magnitude of voltage under different resistance values, and resistance is every
The resistance value of individual length of interval is different, and therefore, the present invention can avoid the resistance of LDMOS triode
It is loaded into identical fixing end by magnitude of voltage, and punctures the phenomenon of LDMOS triode, thus extend
The service life of LDMOS triode.
In sum, the thermometry of the semiconductor devices that the present invention makes based on LDMOS technique,
The service life of semiconductor devices is affected less.
Accompanying drawing explanation
Fig. 1 is the electric current of the thermometry of existing semiconductor devices based on the making of LDMOS technique
The test structural representation of value；
Fig. 2-3 is the electricity of the thermometry of the semiconductor devices that the present invention makes based on LDMOS technique
The test structural representation of flow valuve.
Detailed description of the invention
Below in conjunction with the accompanying drawings the present invention is described in further detail:
As Figure 2-3, the temperature survey side of the semiconductor devices that the present invention makes based on LDMOS technique
Method, described semiconductor devices, including LDMOS triode, the substrate of described LDMOS triode uses
Silicon materials are made；Described substrate can use insulator material, it would however also be possible to employ bulk silicon material.Use phase
Same or different magnitude of voltage VGIt is loaded into two on-fixed ends of the resistance of LDMOS triode；Described
Two on-fixed ends, including the first on-fixed end 1 and the second on-fixed end 2；Said two on-fixed end is institute
The random length of the resistance stating LDMOS triode is interval；Wherein, described resistance is LDMOS
The resistance of triode；Calculate further according to Ohm's law that to be applied to two of described resistance non-every time
Fixing terminal voltage value VGAfter current value；Afterwards according to the conversion relation of electric current Yu temperature, calculate described half
The temperature value of conductor device.
The thermometry of the semiconductor devices that the present invention makes based on LDMOS technique, is also to use to survey
Amount current value, further according to the conversion relation of electric current Yu temperature, calculates the temperature value of semiconductor devices afterwards.
The thermometry of the semiconductor devices that the present invention makes based on LDMOS technique, is also to use to measure electricity
Flow valuve, further according to the conversion relation of electric current Yu temperature, calculates the temperature value of semiconductor devices afterwards.Different
, the method for testing of current value is different.The present invention uses identical or different magnitude of voltage to be loaded into LDMOS
Two on-fixed ends of the resistance of triode；Calculate further according to Ohm's law and be applied to described grid every time
Current value after two on-fixed terminal voltage value of electrode resistance；And prior art, it is by voltage different for height
Value is loaded into two fixing ends of the resistance of LDMOS triode.Due to LDMOS tri-pole of the present invention
The resistance of pipe is applied in magnitude of voltage at different length of interval, makes the resistance of LDMOS triode
Under different resistance values, apply magnitude of voltage, and the resistance value of each length of interval of resistance is different, because of
This, the present invention can avoid the resistance of LDMOS triode to be loaded into identical fixing end by magnitude of voltage,
And puncture the phenomenon of LDMOS triode, thus extend the service life of LDMOS triode.
In sum, the thermometry of the semiconductor devices that the present invention makes based on LDMOS technique,
The service life of semiconductor devices is affected less.
Claims (5)
1. a thermometry for the semiconductor devices made based on LDMOS technique, described semiconductor
Device, including LDMOS triode, it is characterised in that:
Use identical or different magnitude of voltage (VG) it is loaded into two of resistance of LDMOS triode
On-fixed end；
Two the on-fixed terminal voltage value being every time applied to described resistance are calculated further according to Ohm's law
(VGCurrent value after)；
Afterwards according to the conversion relation of electric current Yu temperature, calculate the temperature value of described semiconductor devices.
The temperature survey of the semiconductor devices made based on LDMOS technique the most according to claim 1
Method, it is characterised in that: said two on-fixed end is appointing of the resistance of described LDMOS triode
Meaning length of interval.
The temperature of the semiconductor devices made based on LDMOS technique the most according to claim 1 and 2
Measuring method, it is characterised in that: said two on-fixed end, non-including the first on-fixed end (1) and second
Fixing end (2).
The temperature survey of the semiconductor devices made based on LDMOS technique the most according to claim 1
Method, it is characterised in that: the substrate of described LDMOS triode uses silicon materials to make.
The temperature survey of the semiconductor devices made based on LDMOS technique the most according to claim 4
Method, it is characterised in that: described silicon materials are bulk silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210413632.1A CN102928103B (en) | 2012-10-25 | 2012-10-25 | Thermometry based on the semiconductor devices that LDMOS technique makes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210413632.1A CN102928103B (en) | 2012-10-25 | 2012-10-25 | Thermometry based on the semiconductor devices that LDMOS technique makes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102928103A CN102928103A (en) | 2013-02-13 |
| CN102928103B true CN102928103B (en) | 2016-09-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201210413632.1A Active CN102928103B (en) | 2012-10-25 | 2012-10-25 | Thermometry based on the semiconductor devices that LDMOS technique makes |
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Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5672320A (en) * | 1979-11-19 | 1981-06-16 | Mitsubishi Electric Corp | Temperature measuring device |
| FR2844636B1 (en) * | 2002-09-13 | 2005-08-19 | Socomec Sa | DUAL MAGNETIC AND THERMAL SENSOR OBTAINED ACCORDING TO SEMICONDUCTOR TECHNOLOGY |
| US6906399B2 (en) * | 2002-11-04 | 2005-06-14 | Delphi Technologies, Inc. | Integrated circuit including semiconductor power device and electrically isolated thermal sensor |
| CN101915624B (en) * | 2010-05-06 | 2012-07-25 | 北京大学 | Heat characterization method and structure for monitoring temperature of transistor in real time |
| DE102010029147B4 (en) * | 2010-05-20 | 2012-04-12 | Semikron Elektronik Gmbh & Co. Kg | Method for determining the temperature of a power semiconductor |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140423 |
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Effective date of registration: 20140423 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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