CN102916129A - Resistance random access memory based on vanadium oxide/zinc oxide laminated structure and preparation method thereof - Google Patents
Resistance random access memory based on vanadium oxide/zinc oxide laminated structure and preparation method thereof Download PDFInfo
- Publication number
- CN102916129A CN102916129A CN2012104401327A CN201210440132A CN102916129A CN 102916129 A CN102916129 A CN 102916129A CN 2012104401327 A CN2012104401327 A CN 2012104401327A CN 201210440132 A CN201210440132 A CN 201210440132A CN 102916129 A CN102916129 A CN 102916129A
- Authority
- CN
- China
- Prior art keywords
- zinc oxide
- vanadium oxide
- resistance
- sputtering
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Semiconductor Memories (AREA)
Abstract
The invention relates to a resistance random access memory based on a vanadium oxide/zinc oxide laminated structure, wherein the resistance random access memory is composed of a lower electrode, a resistance random layer and an upper electrode; the resistance random layer is the laminated structure composed of a vanadium oxide medium layer and a zinc oxide medium layer; and films of the vanadium oxide medium layer and the zinc oxide medium layer are prepared by adopting a direct-current sputtering or radio-frequency sputtering method. The resistance random access memory based on the vanadium oxide/zinc oxide laminated structure disclosed by the invention has the advantages that: the resistance random access memory is in the form of the vanadium oxide/zinc oxide laminated structure and has the advantage of controlling double polarity and single polarity of zinc oxide; consistency and repeatability of a device are increased; compared with the single-layer vanadium oxide, reset current is decreased to be below 10 mA; in the bipolar testing process, a progressive reset process exists; different high-impedance resistance can be obtained through reset voltage of different amplitude; at least three resistance values can be obtained; more than ten times of resistance value ratio between every two resistance values exists; therefore, the resistance random access memory based on the vanadium oxide/zinc oxide laminated structure can be applied to multi-value storage.
Description
Technical field
The invention belongs to microelectronics technology, be specifically related to a kind of resistance-variable storing device based on vanadium oxide/Zinc oxide laminate structure and preparation method thereof.
Technical background
Resistance-variable storing device is owing to having higher integration density, faster erasable speed, long retention time, and the potential of multilevel storage is arranged, and has been subject to researcher's extensive concern recent years.The design of resistive research on mechanism, new structure, the proposition of new material, the researcher is pursuing higher integration density, the faster breakthrough of read or write speed, multilevel storage.
The structure of resistance-variable storing device is simple metal-insulator-metal (MIM) structure, i.e. the sandwich structure of upper/lower electrode and middle change resistance layer, and most of change resistance layers are single layer structure.In recent years, because double-deck advantage, the researcher began to have proposed some lamination resistive structures, and performance of devices is improved.(Reliable resistiveswitching device based on bi-layers of ZrO in the document of Gwangju, Korea Science and Technology research institute in 2009
x/ HfO
xFilms), the people such as J.Lee adopts ZrO
x/ HfO
xLaminated construction, obtained stable bipolarity resistive characteristic, and this device has the characteristic potential of multilevel storage.U.S.'s University of Toledo document (Switching Characteristicsof Ru/HfO in 2012
2/ TiO
2-x/ Ru RRAM Devices for Digital and Analog NonvolatileMemory Applications) in, the people such as B.Long and Y.Li pass through HfO
2/ TiO
2-xLaminated construction has obtained higher conforming bipolar structure.
Novel laminated structure can overcome the deficiency that exists in the single layer structure, in conjunction with the advantage of single layer structure, improve the performance of single layer structure, the exploration of novel laminated structure and research become researcher's a focus.
In a kind of resistance-variable storing device based on vanadium oxide film and preparation method thereof (CN102130295A), this seminar uses vanadium oxide as the dielectric layer of resistance-variable storing device, obtained a kind of resistance-variable storing device of single-stage, the reset electric current is 40mA, the vanadium oxide film of individual layer has larger reset electric current during as the change resistance layer material; In a kind of controlled resistance-variable storing device of polarity of zinc oxide and preparation method thereof (CN102194995A), this seminar can obtain single-stage, bipolarity, non-polar resistance-variable storing device by depositing different upper/lower electrodes, the reset electric current is 10mA, but consistency and repeatability still need to improve.
Summary of the invention
The objective of the invention is the technical problem for above-mentioned existence, a kind of resistance-variable storing device based on vanadium oxide/Zinc oxide laminate structure and preparation method thereof is provided, this resistance-variable storing device has zinc oxide bipolarity and the controlled advantage of unipolarity polarity, can improve consistency and the repeatability of device.
Technical scheme of the present invention:
A kind of resistance-variable storing device based on vanadium oxide/Zinc oxide laminate structure is made of bottom electrode, change resistance layer and top electrode, and change resistance layer is the laminated construction that is comprised of vanadium oxide dielectric layer and zinc oxide dielectric layer, and the composition of zinc oxide is ZnO
1-x, 0＜x＜0.5 wherein, the thickness of zinc oxide dielectric layer is 1-500nm; The composition of vanadium oxide is VO
y, 0.5＜y＜2.5 wherein, the thickness of vanadium oxide dielectric layer is 1-500nm.
Described upper/lower electrode material is conducting metal, metal alloy and conductive metallic compound, and wherein conducting metal is Ta, Cu, Ag, W, Ni, Al or Pt; Metal alloy is Pt/Ti, Ti/Ta, Cu/Ti, Cu/Au, Cu/Al or Al/Zr; Conductive metallic compound is TiN or ITO.
A kind of preparation method of described resistance-variable storing device based on vanadium oxide/Zinc oxide laminate structure, step is as follows, and wherein vanadium oxide dielectric layer and zinc oxide dielectric layer thin film technology do not limit precedence:
1) take the Si sheet as substrate, utilize the method for thermal oxidation to prepare SiO
2Insulating barrier;
2) at SiO
2Utilize the method for ion beam sputtering to prepare the Ti adhesion layer on the insulating barrier;
3) prepare bottom electrode at the Ti adhesion layer;
4) adopt direct current sputtering or radio frequency sputtering method deposition vanadium oxide film at bottom electrode, the sputtering technology condition is: base vacuum is less than 10
-4Pa, underlayer temperature are that room temperature-200 ℃, operating pressure 0.1-2Pa, partial pressure of oxygen are that 5%-30%, sputtering power are 50-250W;
5) adopt direct current sputtering or radio frequency sputtering method depositing zinc oxide film at vanadium oxide film, the sputtering technology condition is: base vacuum is less than 10
-4Pa, underlayer temperature are that room temperature-300 ℃, operating pressure are that 0.1-2Pa, partial pressure of oxygen are that 5%-40%, sputtering power are 50-250W;
6) prepare top electrode at zinc-oxide film;
7) utilize method growth one deck SiO of PECVD at top electrode
2As protective layer.
The described method for preparing upper/lower electrode is ion beam sputtering, magnetron sputtering or electron beam evaporation process.
Technical Analysis of the present invention:
The difference of this resistance-variable storing device and traditional single layer structure is, there are two-layer dielectric layer vanadium oxide, zinc oxide, under the effect of extra electric field, the generation rate in a kind of material oxygen room is greater than another material, in a kind of material, just preferentially form like this conductive channel in oxygen room, then the electric field of another material just reaches the requirement that produces the oxygen room, forms the passage in oxygen room.Just the opposite in the Reset process, preferentially form the rear fracture of oxygen space channels.This vanadium oxide/Zinc oxide laminate structure owing to the process at reset is a progressive process, can obtain by the reset voltage of various amplitude the resistance of different high-impedance states.
Advantage of the present invention and beneficial effect are:
This resistance-variable storing device adopts vanadium oxide/Zinc oxide laminate structure, has zinc oxide bipolarity and the controlled advantage of unipolarity polarity, has improved consistency and the repeatability of device; Compare with mono-layer oxidized vanadium, the reset electric current has dropped to below the 10mA; In the bipolarity test process, have a progressive reset process, can obtain by the reset voltage of various amplitude the resistance of different high-impedance states, can obtain at least 3 resistance values, and the resistance value ratio more than 10 times is arranged between each resistance value.
Description of drawings
Fig. 1 is this resistance variation memory structure schematic diagram.
Among the figure: 1. bottom electrode 2. vanadium oxide dielectric layers 3. zinc oxide dielectric layers 4. top electrodes
Fig. 2 is this resistance-variable storing device unipolarity electrology characteristic curve.
Fig. 3 is that this resistance-variable storing device uses analyzing parameters of semiconductor instrument DC scanning, the ambipolar curve of set process and progressive reset process.
Fig. 4 be this resistance-variable storing device when bipolarity, the reset process adopt amplitude be-0.5V and-the endurance curve of three attitudes of 0.85V acquisition, resistance ratio is greater than 10 times between each attitude.
Embodiment
Embodiment 1:
A kind of resistance-variable storing device based on vanadium oxide/Zinc oxide laminate structure as shown in Figure 1, is made of bottom electrode 1, change resistance layer and top electrode 4, and change resistance layer is the laminated construction that is comprised of vanadium oxide dielectric layer 2 and zinc oxide dielectric layer 3, and the composition of zinc oxide is ZnO
1-x, wherein x is 0.1, the thickness of zinc oxide dielectric layer is 30nm; The composition of vanadium oxide is VO
y, wherein y is 0.15, the thickness of vanadium oxide dielectric layer is 30nm; Bottom electrode is that Pt, thickness are 50nm, and powering on very, W, thickness are 50nm.
The preparation method of this resistance-variable storing device, step is as follows:
1) take the Si sheet as substrate, use the oxide-diffused stove, the method by thermal oxidation prepares SiO at silicon substrate
2Insulating barrier;
2) at SiO
2Utilize the method for ion beam sputtering to prepare the thick Ti adhesion layer of one deck 10nm on the insulating barrier;
3) adopt the method for electron beam evaporation at the thick Pt bottom electrode of Ti adhesion layer deposition 50nm;
4) adopting the radio frequency sputtering method deposit thickness at bottom electrode is the 30nm vanadium oxide film, and the sputtering technology condition is: target is φ 60mm vanadium oxide ceramic target, and the target intercept is 6.5cm, and base vacuum is less than 10
-4Pa, underlayer temperature are that 200 ℃, operating pressure 1.0Pa, partial pressure of oxygen are 20%, sputtering power is 100W;
5) adopting the radio frequency sputtering method deposit thickness at vanadium oxide film is the 30nm zinc-oxide film, and the sputtering technology condition is: target is φ 60mm zinc oxide ceramic target, and the target intercept is 6.5cm, and base vacuum is less than 10
-4The Pa underlayer temperature is that 200 ℃, operating pressure are that 0.5Pa, partial pressure of oxygen are 20%, sputtering power is 50W;
6) be 50nm tungsten top electrode by Deposited By Dc Magnetron Sputtering thickness on zinc-oxide film, the process conditions of magnetically controlled DC sputtering are: target is φ 60mm metal tungsten target, and the target intercept is 6.5cm, operating pressure 0.5Pa, and Ar flow 20sccm, sputtering power are 50W;
7) utilize method growth one deck SiO of PECVD at top electrode
2As protective layer.
Electrology characteristic is tested by analyzing parameters of semiconductor, and this device is a kind of non-polar device, can realize the bipolarity operation, as shown in Figure 2; Also can realize the unipolarity operation, as shown in Figure 3; By adjusting the amplitude of reset voltage, when reset voltage was 0.5, high-impedance state was about 600ohm, and when the amplitude of reset voltage was 0.85, high-impedance state was about 60kohm, as shown in Figure 4.
Embodiment 2:
A kind of resistance-variable storing device based on vanadium oxide/Zinc oxide laminate structure, structure is substantially the same manner as Example 1, and difference is take W as bottom electrode, thickness is 50nm, and TiN is that top electrode, thickness are 100nm.
The preparation method of this resistance-variable storing device, step is as follows:
1), 2) identical with embodiment 1;
3) be 50nm tungsten bottom electrode by Deposited By Dc Magnetron Sputtering thickness on the Ti adhesion layer, the technological parameter of magnetically controlled DC sputtering: target is φ 60mm metal tungsten target, and the target intercept is 6.5cm, and operating pressure is 0.5Pa, and the Ar flow is 20sccm, and sputtering power is 50W;
4) adopting the radio frequency sputtering method deposit thickness at bottom electrode is the 30nm vanadium oxide film, and the sputtering technology condition is: target is φ 60mm vanadium oxide ceramic target, and the target intercept is 6.5cm, and base vacuum is less than 10
-4Pa, underlayer temperature are that 200 ℃, operating pressure 1.0Pa, partial pressure of oxygen are 20%, sputtering power is 100W;
5) adopting the radio frequency sputtering method deposit thickness at vanadium oxide film is the 30nm zinc-oxide film, and the sputtering technology condition is: target is φ 60mm zinc oxide ceramic target, and the target intercept is 6.5cm, and base vacuum is less than 10
-4The Pa underlayer temperature is that 200 ℃, operating pressure are that 1.0Pa, partial pressure of oxygen are 40%, sputtering power is 100W;
6) on zinc-oxide film, be the 100nmTiN top electrode by Deposited By Dc Magnetron Sputtering thickness, the technological parameter of magnetically controlled DC sputtering: target is φ 60mm metal titanium targets, and the target intercept is 6.5cm, and operating pressure is 0.5Pa, nitrogen partial pressure is 7%, and sputtering power is 100W;
7) utilize method growth one deck SiO of PECVD at top electrode
2As protective layer.
Electrology characteristic is by the test of analyzing parameters of semiconductor instrument, and device shows as the bipolarity characteristic, and device has preferably consistency.
Embodiment 3:
A kind of resistance-variable storing device based on vanadium oxide/Zinc oxide laminate structure, structure is substantially the same manner as Example 1, and difference is that take W as bottom electrode, W is top electrode, and thickness is 50nm.
The preparation method of this resistance-variable storing device, the preparation technology of step and W electrode is identical with embodiment 1.
Embodiment 4:
A kind of resistance-variable storing device based on vanadium oxide/Zinc oxide laminate structure, structure is substantially the same manner as Example 1, and difference is that take Pt as bottom electrode, Cu is top electrode, and thickness is 50nm.
The preparation method of this resistance-variable storing device, the preparation technology of step and Pt electrode is identical with embodiment 1.
Top electrode Cu is by the method preparation of magnetically controlled DC sputtering, and the concrete technology condition is: target is φ 60mm metallic copper target, and the target intercept is 6.5cm, and operating pressure is 1Pa, and the Ar flow is 20sccm, and sputtering power is 50W.
The testing result summary sheet of embodiment 1-4:
Claims (4)
1. resistance-variable storing device based on vanadium oxide/Zinc oxide laminate structure, it is characterized in that: be made of bottom electrode, change resistance layer and top electrode, change resistance layer is the laminated construction that is comprised of vanadium oxide dielectric layer and zinc oxide dielectric layer, and the composition of zinc oxide is ZnO
1-x, 0＜x＜0.5 wherein, the thickness of zinc oxide dielectric layer is 1-500nm; The composition of vanadium oxide is VO
y, 0.5＜y＜2.5 wherein, the thickness of vanadium oxide dielectric layer is 1-500nm.
2. described resistance-variable storing device based on vanadium oxide/Zinc oxide laminate structure according to claim 1, it is characterized in that: described upper/lower electrode material is conducting metal, metal alloy and conductive metallic compound, and wherein conducting metal is Ta, Cu, Ag, W, Ni, Al or Pt; Metal alloy is Pt/Ti, Ti/Ta, Cu/Ti, Cu/Au, Cu/Al or Al/Zr; Conductive metallic compound is TiN or ITO.
3. one kind as claimed in claim 1 based on the preparation method of the resistance-variable storing device of vanadium oxide/Zinc oxide laminate structure, it is characterized in that step is as follows, and wherein vanadium oxide dielectric layer and zinc oxide dielectric layer thin film technology do not limit precedence:
1) take the Si sheet as substrate, utilize the method for thermal oxidation to prepare SiO
2Insulating barrier;
2) at SiO
2Utilize the method for ion beam sputtering to prepare the Ti adhesion layer on the insulating barrier;
3) prepare bottom electrode at the Ti adhesion layer;
4) adopt direct current sputtering or radio frequency sputtering method deposition vanadium oxide film at bottom electrode, the sputtering technology condition is: base vacuum is less than 10
-4Pa, underlayer temperature are that room temperature-200 ℃, operating pressure 0.1-2Pa, partial pressure of oxygen are that 5%-30%, sputtering power are 50-250W;
5) adopt direct current sputtering or radio frequency sputtering method depositing zinc oxide film at vanadium oxide film, the sputtering technology condition is: base vacuum is less than 10
-4Pa, underlayer temperature are that room temperature-300 ℃, operating pressure are that 0.1-2Pa, partial pressure of oxygen are that 5%-40%, sputtering power are 50-250W;
6) prepare top electrode at zinc-oxide film;
7) utilize method growth one deck SiO of PECVD at top electrode
2As protective layer.
4. the preparation method of described resistance-variable storing device based on vanadium oxide/Zinc oxide laminate structure according to claim 3, it is characterized in that: the described method for preparing upper/lower electrode is ion beam sputtering, magnetron sputtering or electron beam evaporation process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210440132.7A CN102916129B (en) | 2012-11-07 | 2012-11-07 | Resistance random access memory based on vanadium oxide/zinc oxide laminated structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210440132.7A CN102916129B (en) | 2012-11-07 | 2012-11-07 | Resistance random access memory based on vanadium oxide/zinc oxide laminated structure and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102916129A true CN102916129A (en) | 2013-02-06 |
| CN102916129B CN102916129B (en) | 2014-09-10 |
Family
ID=47614429
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210440132.7A Active CN102916129B (en) | 2012-11-07 | 2012-11-07 | Resistance random access memory based on vanadium oxide/zinc oxide laminated structure and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102916129B (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103151459A (en) * | 2013-03-28 | 2013-06-12 | 天津理工大学 | Hafnium-oxynitride-based low-power consumption resistive random access memory and preparation method for same |
| CN103296205A (en) * | 2013-07-01 | 2013-09-11 | 天津理工大学 | Low power consumption resistive random access memory and manufacturing method thereof |
| CN103311435A (en) * | 2013-07-01 | 2013-09-18 | 天津理工大学 | Resistance random access memory based on vanadium oxide/aluminum oxide laminated structure and manufacturing method thereof |
| CN105810817A (en) * | 2016-05-31 | 2016-07-27 | 天津理工大学 | Resistive device of two-dimensional nanosheet-layer MoS2 vertical structure |
| CN106025065A (en) * | 2016-05-30 | 2016-10-12 | 天津理工大学 | Two-dimensional nano molybdenum sulfide sheet layer/binary oxide laminated structure type resistive random access memory |
| CN108470827A (en) * | 2018-03-05 | 2018-08-31 | 湖北大学 | A kind of flexible and transparent transition metal oxide resistance-variable storing device and preparation method thereof |
| CN109461814A (en) * | 2018-10-09 | 2019-03-12 | 河北大学 | A kind of memristor based on zinc oxide and preparation method thereof and preparing the application in the bionical device of nerve synapse |
| CN109980083A (en) * | 2019-04-17 | 2019-07-05 | 河南大学 | A kind of small area electrode resistance-variable storing device of filament mechanism and preparation method thereof |
| CN109994605A (en) * | 2019-04-17 | 2019-07-09 | 河南大学 | A kind of resistance-variable storing device and preparation method thereof of electrode structure multiplexing |
| CN110739395A (en) * | 2019-10-30 | 2020-01-31 | 上海华力微电子有限公司 | Resistive random access memory and preparation method thereof |
| CN113380948A (en) * | 2021-06-10 | 2021-09-10 | 西交利物浦大学 | Synaptic memristor with multi-level storage function and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1815770A (en) * | 2004-12-21 | 2006-08-09 | 三星电子株式会社 | Nonvolatile memory device having two or more resistance elements and methods of forming and using the same |
| US20070200158A1 (en) * | 2006-02-27 | 2007-08-30 | Samsung Electronics Co., Ltd. | Electrode structure having at least two oxide layers and non-volatile memory device having the same |
| CN102130295A (en) * | 2010-12-17 | 2011-07-20 | 天津理工大学 | Resistive random access memory based on vanadium oxide film and preparation method thereof |
-
2012
- 2012-11-07 CN CN201210440132.7A patent/CN102916129B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1815770A (en) * | 2004-12-21 | 2006-08-09 | 三星电子株式会社 | Nonvolatile memory device having two or more resistance elements and methods of forming and using the same |
| US20070200158A1 (en) * | 2006-02-27 | 2007-08-30 | Samsung Electronics Co., Ltd. | Electrode structure having at least two oxide layers and non-volatile memory device having the same |
| CN102130295A (en) * | 2010-12-17 | 2011-07-20 | 天津理工大学 | Resistive random access memory based on vanadium oxide film and preparation method thereof |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103151459A (en) * | 2013-03-28 | 2013-06-12 | 天津理工大学 | Hafnium-oxynitride-based low-power consumption resistive random access memory and preparation method for same |
| CN103296205A (en) * | 2013-07-01 | 2013-09-11 | 天津理工大学 | Low power consumption resistive random access memory and manufacturing method thereof |
| CN103311435A (en) * | 2013-07-01 | 2013-09-18 | 天津理工大学 | Resistance random access memory based on vanadium oxide/aluminum oxide laminated structure and manufacturing method thereof |
| CN103311435B (en) * | 2013-07-01 | 2015-09-30 | 天津理工大学 | Based on the resistance-variable storing device and preparation method thereof of vanadium oxide/aluminium oxide laminated construction |
| CN106025065A (en) * | 2016-05-30 | 2016-10-12 | 天津理工大学 | Two-dimensional nano molybdenum sulfide sheet layer/binary oxide laminated structure type resistive random access memory |
| CN105810817A (en) * | 2016-05-31 | 2016-07-27 | 天津理工大学 | Resistive device of two-dimensional nanosheet-layer MoS2 vertical structure |
| CN108470827A (en) * | 2018-03-05 | 2018-08-31 | 湖北大学 | A kind of flexible and transparent transition metal oxide resistance-variable storing device and preparation method thereof |
| CN109461814A (en) * | 2018-10-09 | 2019-03-12 | 河北大学 | A kind of memristor based on zinc oxide and preparation method thereof and preparing the application in the bionical device of nerve synapse |
| CN109980083A (en) * | 2019-04-17 | 2019-07-05 | 河南大学 | A kind of small area electrode resistance-variable storing device of filament mechanism and preparation method thereof |
| CN109994605A (en) * | 2019-04-17 | 2019-07-09 | 河南大学 | A kind of resistance-variable storing device and preparation method thereof of electrode structure multiplexing |
| CN109980083B (en) * | 2019-04-17 | 2024-06-07 | 河南大学 | Small-area electrode resistance random access memory with filament mechanism and preparation method thereof |
| CN110739395A (en) * | 2019-10-30 | 2020-01-31 | 上海华力微电子有限公司 | Resistive random access memory and preparation method thereof |
| CN113380948A (en) * | 2021-06-10 | 2021-09-10 | 西交利物浦大学 | Synaptic memristor with multi-level storage function and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102916129B (en) | 2014-09-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102916129B (en) | Resistance random access memory based on vanadium oxide/zinc oxide laminated structure and preparation method thereof | |
| CN103151459B (en) | Hafnium-oxynitride-based low-power consumption resistive random access memory and preparation method for same | |
| US10985318B2 (en) | Memristor device and a method of fabrication thereof | |
| CN101621115B (en) | Binary oxide resistance random access memory (RRAM) storage unit of electric pulse induced resistance conversion characteristics | |
| CN103311435B (en) | Based on the resistance-variable storing device and preparation method thereof of vanadium oxide/aluminium oxide laminated construction | |
| CN104205343A (en) | Customizable nonlinear electrical devices | |
| Liu et al. | Improved resistive switching of textured ZnO thin films grown on Ru electrodes | |
| CN102194995A (en) | Zinc-oxide-based polarity-controlled resistive random-access memory (RRAM) and manufacturing method thereof | |
| US8907314B2 (en) | MoOx-based resistance switching materials | |
| CN104795492B (en) | A kind of low-power consumption resistance-variable storing device based on hafnium oxide/titanium oxide laminated construction | |
| CN105932035A (en) | Gating device for resistive random access memory crossbar array and preparation method thereof | |
| CN102136487B (en) | Resistance-type RAM (Random Access Memory) memory unit based on zinc oxide material and preparation method thereof | |
| CN103682095B (en) | A kind of resistance-variable storing device with selectivity characteristic and preparation method thereof | |
| CN105514267B (en) | A kind of low-power consumption memristor based on amorphous Si C thin film and preparation method thereof | |
| CN103794621B (en) | A kind of bidirectional current limiting device and preparation method thereof | |
| CN105957962B (en) | A kind of TiOx/Al2O3/TiOxSandwich lamination resistive random access memory film and preparation method thereof | |
| CN102593352A (en) | Method for preparing resistive random access memory | |
| CN105226182B (en) | A kind of list is bipolar to coexist double-layer film structure resistive holder and preparation method thereof | |
| KR101046725B1 (en) | Resistive memory devices | |
| CN103078053A (en) | Multi-value resistive random access memory (RRAM) and manufacturing method thereof | |
| CN102820428A (en) | Improved oxide-film resistance changing memory and improvement method thereof | |
| CN103296205A (en) | Low power consumption resistive random access memory and manufacturing method thereof | |
| CN110752289A (en) | Based on MnZn codoped BiFeO3Resistive random access memory of thin film and preparation method thereof | |
| CN105390611B (en) | A kind of low-power consumption resistance-variable storing device and preparation method thereof based on double storage medium layers | |
| CN101894911A (en) | Preparation method of resistance type memory with high data retention ability |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |