CN102915943A - Electrostatic chuck and semiconductor equipment - Google Patents
Electrostatic chuck and semiconductor equipment Download PDFInfo
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- CN102915943A CN102915943A CN2011102202697A CN201110220269A CN102915943A CN 102915943 A CN102915943 A CN 102915943A CN 2011102202697 A CN2011102202697 A CN 2011102202697A CN 201110220269 A CN201110220269 A CN 201110220269A CN 102915943 A CN102915943 A CN 102915943A
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Abstract
The invention discloses an electrostatic chuck and semiconductor equipment. The electrostatic chuck comprises a substrate, an electrode, a power source and a contact component electrically connected with the power source, wherein the electrode is arranged inside the substrate; the power source is connected with the electrode; and the contact component is used for contacting with a wafer and forms an access with the power source, the electrode and the wafer, so as to enable the wafer to be adsorbed on the substrate. According to the invention, the contact component connected with the power source is in contact with the wafer when the wafer is located on the substrate, in order to enable the power source, the contact component, the wafer and the electrode to form the access, and allow the access to be in conducting state; and the wafer is adsorbed on the substrate, thereby realizing adsorption to the wafer without dependence to plasma.
Description
Technical field
The present invention relates to microelectronics technology, particularly a kind of electrostatic chuck and semiconductor equipment.
Background technology
At integrated circuit (Integrated Circuit, hereinafter to be referred as: IC) in the technical process, particularly plasma etching (Etch), physical vapour deposition (PVD) (Physical Vapor Deposition, be called for short: PVD), chemical vapour deposition (CVD) (Chemical Vapor Deposition, be called for short: CVD) etc. in the technical process, usually (Electro Static Chuck is called for short: ESC) bearing wafer (Wafer) to adopt electrostatic chuck.Adopt the electrostatic chuck bearing wafer, can realize fixing, supporting and wafer is carried out temperature control, and avoid since in the technical process wafer occur mobile or dislocation causes affects technological effect or increase the problem of attaching particles on the wafer.Compare with vacuum cup with traditional mechanical chuck, electrostatic chuck has lot of advantages: electrostatic chuck has reduced in using the process of traditional chuck because the damage of the unrepairable that the mechanical reasons such as pressure, collision cause wafer; Because it is fixing to adopt electrostatic attraction to need not machinery, therefore increased effective technique area of wafer; Reduced because the particle contamination that mechanical collision produces.Electrostatic chuck adopts the mode of electrostatic attraction to adsorb wafer, and electrostatic chuck can be divided into single electrode electrostatic chuck, dual-electrode electrostatic chuck and multi-electrode electrostatic chuck according to the quantity of electrode.
That the single electrode electrostatic chuck has is simple in structure, be easy to design processing, produce high, the advantages such as the electrostatic attraction balance is good, wafer surface ion bombardment energy good uniformity of electrostatic attraction efficient.Fig. 1 is a kind of structural representation of single electrode electrostatic chuck, and as shown in Figure 1, this single electrode electrostatic chuck comprises: matrix 11, electrode 12 and power supply 13, and electrode 12 is arranged at the inside of matrix 11, and the negative pole of power supply 13 is connected connection with electrode, the plus earth of power supply 13.This single electrode electrostatic chuck can be applicable in the processing chamber.Fig. 2 is the equivalent circuit diagram of single electrode electrostatic chuck among Fig. 1, and in conjunction with illustrated in figures 1 and 2, when wafer 14 was positioned on the matrix 11, electrode 12 and wafer 14 were parallel and form a capacitance structure.After producing plasma 15 around the electrostatic chuck in the processing chamber, electrostatic chuck relies on plasma 15 can realize that circuit connects.Particularly, the power supply 13 of electrostatic chuck is connected connection by plasma 15 with wafer, make power supply 13, electrode 12 and wafer 14 form path and make this path be in conducting state, thereby wafer 14 is adsorbed on the matrix 11 under the effect of the electrostatic attraction that electrode 12 produces.
Because the single electrode electrostatic chuck relies on only can produce plasma in processing chamber the time this plasma could realize absorption to wafer, so this single electrode electrostatic chuck can't be realized absorption to wafer when not producing plasma in the processing chamber.
Summary of the invention
The invention provides a kind of electrostatic chuck and semiconductor equipment, in order under the prerequisite that does not rely on plasma, to realize the absorption to wafer.
For achieving the above object, the invention provides a kind of electrostatic chuck, comprise matrix, electrode and power supply, described electrode is arranged at the inside of described matrix, described power supply be connected electrode and connect, also comprise the contact component that is electrically connected with described power supply, described contact component is used for contacting with wafer and forming path with described power supply, described electrode and described wafer, so that described chip sucking invests on the described matrix.
Further, offer connecting hole on the described matrix, on comprising the connector that is complementary with described connecting hole and be connected described connector, described contact component is connected film, described connector is positioned at described connecting hole, described connection film is covered in the upper surface of described matrix, and described connection film is used for contacting with described wafer and forming path with described connector, described power supply, described electrode and described wafer.
Further, described connecting hole is opened in the edge of described body upper surface, and described connection film is covered in the edge of described body upper surface.
Further, the end face of described connector is lower than the upper surface of described matrix, and described connection film also is covered on the part inwall of described connecting hole.
Further, described connection film is shaped as annular.
Further, the thickness of described connection film comprises: 5 μ m to 10 μ m.
Further, described connecting hole is through hole.
Further, need the material of the metal level that forms identical on the material of described connection film and the described wafer.
Further, the material of described connector is copper or titanium.
For achieving the above object, the present invention also provides a kind of semiconductor equipment, comprising: processing chamber and the above-mentioned electrostatic chuck that is arranged at described processing chamber inside, described electrostatic chuck are used for the absorption wafer.
The present invention has following beneficial effect:
In the technical scheme of electrostatic chuck provided by the invention and semiconductor equipment, this electrostatic chuck comprises matrix, electrode, power supply and the contact component that is electrically connected with power supply, electrode is arranged at the inside of matrix, power supply is connected with electrode, contact component is used for contacting with wafer and forming path with power supply, electrode and wafer, so that chip sucking invests on the matrix.The contact component that is connected with power supply among the present invention contacts with wafer on wafer is positioned at matrix the time, make power supply, contact component, wafer and electrode formation path and make this path be in conducting state, so that chip sucking invests on the matrix, thereby under the prerequisite that does not rely on plasma, realize absorption to wafer.
Description of drawings
Fig. 1 is a kind of structural representation of single electrode electrostatic chuck;
Fig. 2 is the equivalent circuit diagram of single electrode electrostatic chuck among Fig. 1;
The structural representation of a kind of electrostatic chuck that Fig. 3 provides for the embodiment of the invention one;
Fig. 4 is partial enlarged drawing among Fig. 3;
Fig. 5 is the application schematic diagram of electrostatic chuck among Fig. 3;
Fig. 6 is the schematic top plan view of electrostatic chuck among Fig. 3.
Embodiment
For making those skilled in the art understand better technical scheme of the present invention, below in conjunction with accompanying drawing electrostatic chuck provided by the invention and semiconductor equipment are described in detail.
The structural representation of a kind of electrostatic chuck that Fig. 3 provides for the embodiment of the invention one, Fig. 4 is partial enlarged drawing among Fig. 3, as shown in Figure 3 and Figure 4, this electrostatic chuck comprises matrix 21, electrode 22, power supply 23 and the contact component that is electrically connected with power supply 23, electrode 22 is arranged at the inside of matrix 21, power supply 23 is connected connection with electrode, contact component be used for contact with wafer 27 and with power supply 23, electrode 22 and wafer 27 formation paths so that wafer 27 is adsorbed on the matrix 21.
In the present embodiment, the negative pole of power supply 23 is connected connection with electrode, and the positive pole of power supply 23 and contact component are connected in series and ground connection.At this moment, the current potential of the positive pole of power supply 23 and contact component junction is the reference potential of path.
In the present embodiment, can adopt special process that electrode 22 is embedded in matrix 21 inside.For example: by the mode forming section base layer of sintering; Print electrode in surface at established part base layer; Mode by sintering on electrode forms another part base layer, thereby forms matrix and electrode, and realizes electrode is embedded in the matrix.Again for example: by bonded adhesives electrode is bonded on the established part base layer; By bonded adhesives established another part base layer is bonded on the electrode again, thereby forms matrix and electrode, and realize electrode is embedded in the matrix.
In the present embodiment, offer connecting hole 24 on the matrix 21, on comprising the connector 25 that is complementary with connecting hole 24 and be connected connector 25, contact component is connected film 26, connector 25 is positioned at connecting hole 24, connect the upper surface that film 26 is covered in matrix 21, connect film 26 and be used for contacting with wafer and forming path with connector 25, power supply 23, electrode 22 and wafer 27.Wherein, connector 25 is packed into after the connecting hole 24, can process carrying out soldering between connector 25 and the connecting hole 24, to guarantee connection and the vacuum seal between connector 25 and the connecting hole 24.
In the present embodiment, connecting hole 24 is opened in the edge of matrix 21 upper surfaces, connects the edge that film 26 is covered in matrix 21 upper surfaces.Wherein, connecting hole 24 can be through hole or blind hole.In the present embodiment, connecting hole 24 is through hole.Wherein, the end face of connector 25 is lower than the upper surface of matrix 21, connects film 26 and also is covered on the part inwall of connecting hole 24.
Fig. 5 is the application schematic diagram of electrostatic chuck among Fig. 3, and in conjunction with Fig. 3, Fig. 4 and shown in Figure 5, in the time of on wafer 27 is positioned at matrix 21, electrode 22 and wafer 27 are parallel and form a capacitance structure.Connect film 26 and contact with wafer 27, make electrostatic chuck realize that circuit connects.Particularly, power supply 23 connects successively connector 25, connects film 26, wafer 27 and electrode 22, thereby makes power supply 23, connector 25, connection film 26, wafer 27 and electrode 22 form paths and make this path be in conducting state.Wherein, the negative pole of power supply 23 is connected connection with electrode, and the positive pole of power supply 23 and connector 25 are connected in series and ground connection, and the current potential of the positive pole of power supply 23 and connector 25 junctions is the reference potential of path.At this moment, because electrode 22 and wafer 27 form capacitance structure, so 22 pairs of wafers of electrode, 27 generation electrostatic attractions, thereby wafer 27 is adsorbed on the matrix 21 under the effect of the electrostatic attraction that electrode 22 produces.
Fig. 6 is the schematic top plan view of electrostatic chuck among Fig. 3, as shown in Figure 6, connects film 26 and is formed on the edge on matrix 21 surfaces, and connect the annular that is shaped as of film 26.Preferably, connect the annulus that is shaped as of film 26, because the shape of wafer is generally circular, therefore connects film 26 and adopt the shape of annulus to be convenient to match with the shape of wafer.Connect shape that film 26 adopts annular and can increase and connect film 26 and wafer 27 contacts area, connect film 26 better and wafer 27 comes in contact thereby make.In the present embodiment, electrode 22 is arranged at the inside of matrix 21, and the diameter of electrode 22 is less than the diameter of matrix 21.Because connecting film 26 directly contacts with wafer 27, the current potential that connects film 26 in path is identical with the current potential of wafer 27, that is to say and connect between film 26 and the wafer 27 without potential difference, therefore the 26 pairs of wafers 27 of connection film that are positioned at marginal position do not produce electrostatic attraction, and wafer 27 is to be adsorbed on the matrix 21 under the effect of the electrostatic attraction that the electrode 22 that is positioned at matrix 21 centers produces.In sum, connect film 26 and can the electrostatic attraction that be used for absorption wafer 27 not exerted an influence, thereby make electrostatic chuck can produce balanced electrostatic attraction, to realize the equilibrium adsorption to wafer.Further, in the present embodiment, the shape that connects film 26 can also adopt other arbitrary shape as required, and for example: the shape that connects film 26 can also for semi-circular, be enumerated herein no longer one by one.
In the present embodiment, the thickness that connects film 26 comprises: 5 μ m to 10 μ m.
In the present embodiment, the material that connects film 26 is metal.Preferably, need the material of metal level of formation identical on the material that connects film 26 and the wafer 27, thereby when effectively having avoided processing chamber that wafer 27 is carried out PROCESS FOR TREATMENT formation metal level, owing to the particle migration of the different connection films that cause 26 generations from the material of metal level of the material that connects film 26 becomes the problem of impurity on the wafer 27 to the wafer 27, avoided the pollution to wafer 27.
In the present embodiment, the material of connector 25 is metal.Preferably, the material of connector 25 is copper or titanium.
In the present embodiment, the material of matrix 21 is preferably pottery.
In the present embodiment, can form at matrix 21 by following manner and connect film 26: at first cover a covering according to the shape that connects film 26 in the zone that matrix 21 connects outside the film 26, be exposed in the processing chamber so that connect the zone of film 26, connect the regional covered lid that covers outside the film 26; Connect thin-film material in matrix 21 depositions, so that deposit the connection thin-film material on the zone of connection film 26; Covering is removed, form connection film 26 at matrix 21.Wherein, this processing chamber can adopt the chamber that wafer 27 is carried out PROCESS FOR TREATMENT.
Alternatively, contact component can also only comprise the connector that is complementary with connecting hole, and connector is positioned at connecting hole, and the end face of connector is higher than the upper surface of matrix, so that connector contacts with wafer on wafer is positioned at matrix the time, thereby chip sucking is invested on the matrix.Wherein, the distance of the upper surface of the end face of connector and matrix comprises: 5 μ m to 10 μ m.Further, in actual applications, contact component can also adopt other structures, enumerates no longer one by one herein.
Need to prove: the surface of wafer possesses certain roughness, and namely the surface of wafer is rough structure.Difference in height between the outstanding position of wafer surface and the depression position is greater than the distance of end face and the body upper surface of contact component, and wherein the distance of the end face of contact component and body upper surface can be the distance of the upper surface of the end face of the thickness that is connected film or connector and matrix.When wafer contacts with contact component and is positioned at electrode within the matrix and adsorbs, because the difference in height between the outstanding position of wafer surface and the depression position is greater than the distance of end face and the body upper surface of contact component, therefore wafer with can also directly contact with the upper surface of matrix when contact component contacts, the wafer deformation that can not bend in this process, thus can not cause broken wafers.
The electrostatic chuck that present embodiment provides can be applicable in the multiple integrated circuit technology, such as: PVD technique etc.
The electrostatic chuck that present embodiment provides comprises matrix, electrode, power supply and the contact component that is electrically connected with power supply, electrode is arranged at the inside of matrix, power supply is connected with electrode, and contact component is used for contacting with wafer and forming path with power supply, electrode and wafer, so that chip sucking invests on the matrix.The contact component that is connected with power supply in the present embodiment contacts with wafer on wafer is positioned at matrix the time, make power supply, contact component, wafer and electrode formation path and make this path be in conducting state, so that chip sucking invests on the matrix, thereby under the prerequisite that does not rely on plasma, realize absorption to wafer.The electrostatic chuck of present embodiment can provide higher electrostatic attraction in the absorption wafer process, thereby wafer more firmly is adsorbed on the matrix.Electrostatic chuck in the present embodiment is simple in structure, be easy to make, and has reduced the complexity of each part design and manufacturing in the electrostatic chuck.
The embodiment of the invention two provides a kind of semiconductor equipment, and this semiconductor equipment comprises processing chamber and be arranged at the electrostatic chuck of processing chamber inside that electrostatic chuck is used for the absorption wafer.In the present embodiment, electrostatic chuck can adopt the electrostatic chuck in above-described embodiment one, repeats no more herein.
Be understandable that above execution mode only is the illustrative embodiments that adopts for principle of the present invention is described, yet the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement also are considered as protection scope of the present invention.
Claims (10)
1. electrostatic chuck, comprise matrix, electrode and power supply, described electrode is arranged at the inside of described matrix, described power supply be connected electrode and connect, it is characterized in that, also comprise the contact component that is electrically connected with described power supply, described contact component is used for contacting with wafer and forming path with described power supply, described electrode and described wafer, so that described chip sucking invests on the described matrix.
2. electrostatic chuck according to claim 1, it is characterized in that, offer connecting hole on the described matrix, on comprising the connector that is complementary with described connecting hole and be connected described connector, described contact component is connected film, described connector is positioned at described connecting hole, described connection film is covered in the upper surface of described matrix, and described connection film is used for contacting with described wafer and forming path with described connector, described power supply, described electrode and described wafer.
3. electrostatic chuck according to claim 2 is characterized in that, described connecting hole is opened in the edge of described body upper surface, and described connection film is covered in the edge of described body upper surface.
4. electrostatic chuck according to claim 2 is characterized in that, the end face of described connector is lower than the upper surface of described matrix, and described connection film also is covered on the part inwall of described connecting hole.
5. electrostatic chuck according to claim 4 is characterized in that, described connection film be shaped as annular.
6. electrostatic chuck according to claim 2 is characterized in that, the thickness of described connection film comprises: 5 μ m to 10 μ m.
7. electrostatic chuck according to claim 2 is characterized in that, described connecting hole is through hole.
8. according to claim 1 to 7 arbitrary described electrostatic chucks, it is characterized in that, need the material of the metal level that forms identical on the material of described connection film and the described wafer.
9. according to claim 1 to 7 arbitrary described electrostatic chucks, it is characterized in that the material of described connector is copper or titanium.
10. a semiconductor equipment is characterized in that, comprising: processing chamber and the electrostatic chuck that is arranged at described processing chamber inside, described electrostatic chuck are used for the absorption wafer;
Described electrostatic chuck comprises the arbitrary described electrostatic chuck of claim 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110220269.7A CN102915943B (en) | 2011-08-02 | 2011-08-02 | Electrostatic chuck and semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110220269.7A CN102915943B (en) | 2011-08-02 | 2011-08-02 | Electrostatic chuck and semiconductor equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102915943A true CN102915943A (en) | 2013-02-06 |
| CN102915943B CN102915943B (en) | 2015-02-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110220269.7A Active CN102915943B (en) | 2011-08-02 | 2011-08-02 | Electrostatic chuck and semiconductor equipment |
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| Country | Link |
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| CN (1) | CN102915943B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6185085B1 (en) * | 1998-12-02 | 2001-02-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | System for transporting and electrostatically chucking a semiconductor wafer or the like |
| JP2003261383A (en) * | 2002-03-11 | 2003-09-16 | Taiheiyo Cement Corp | Aluminum nitride sintered compact and electrostatic chuck using the same |
| CN101278385A (en) * | 2004-11-04 | 2008-10-01 | 株式会社爱发科 | Electrostatic chuck device |
-
2011
- 2011-08-02 CN CN201110220269.7A patent/CN102915943B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6185085B1 (en) * | 1998-12-02 | 2001-02-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | System for transporting and electrostatically chucking a semiconductor wafer or the like |
| JP2003261383A (en) * | 2002-03-11 | 2003-09-16 | Taiheiyo Cement Corp | Aluminum nitride sintered compact and electrostatic chuck using the same |
| CN101278385A (en) * | 2004-11-04 | 2008-10-01 | 株式会社爱发科 | Electrostatic chuck device |
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|---|---|
| CN102915943B (en) | 2015-02-25 |
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Address after: 100015 No. 8 Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100015, M5 building, No. 1 Jiuxianqiao East Road, Beijing, Chaoyang District, two South Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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