CN102914946B - A kind of energy sensor of photomask processor - Google Patents
A kind of energy sensor of photomask processor Download PDFInfo
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- CN102914946B CN102914946B CN201110222159.4A CN201110222159A CN102914946B CN 102914946 B CN102914946 B CN 102914946B CN 201110222159 A CN201110222159 A CN 201110222159A CN 102914946 B CN102914946 B CN 102914946B
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Abstract
The invention provides a kind of energy sensor of photomask processor, comprising: sampling opticator, samples the light in illuminator; Spectrum conversion portion, becomes visible light pulses by the deep ultraviolet pulses switch in sampling light; Photoelectric conversion section, is converted to current signal by visible light pulses signal; And differential amplification output, current signal is zoomed into voltage signal and export.Energy sensor of photomask processor of the present invention, can realize the conversion of radiation wavelength on a large scale, improves the linearity of emittance conversion and the detection accuracy of energy density, thus improves the dosage control performance of lithographic equipment and produce yield.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly relate to a kind of energy density acquisition sensor device for lithographic equipment.
Background technology
In commercial plant, due to the needs of high precision and high production capacity, be dispersed with the control system of a large amount of high speed real time sensor measurement, signal sampling, data acquisition, exchanges data and communications etc.These systems need us to adopt various ways to realize the control of sensor detection, signal sampling control, data acquisition control, exchanges data control and data transfer communications etc.The device of this demand for control is had to comprise: IC manufacturing lithographic equipment, panel display board lithographic equipment, MEMS/MOEMS lithographic equipment, Advanced Packaging lithographic equipment, printed circuit board (PCB) lithographic equipment, printed circuit board (PCB) processing unit (plant) and printing circuit board element mounting device etc.
Lithographic equipment is a kind of device be applied to by required pattern on workpiece.Normally required pattern is applied to the device on the target part on workpiece.Lithographic equipment may be used for the manufacture of such as integrated circuit (IC).In this case, mask plate can be used for producing the circuit pattern formed on IC individual course, and this pattern can be delivered to the target part of workpiece (as silicon wafer) by projection system, such as, comprise a part, on one or more tube core.Normally come up copy required image in proportion by being imaged onto one deck radiation-sensitive materials (resist) that workpiece provides.Known lithographic equipment also comprises scanner, uses radiation laser beam to scan described pattern along given direction (" scanning " direction), and carrys out each target part of irradiation along or antiparallel direction synchronous scanning workpiece parallel with this direction simultaneously.Can also by pattern be generated on workpiece by patterning device by imprint patterns on workpiece.
Utilize the multiple sensors being positioned at substrate level place to evaluate and optimize imaging performance.These sensors can comprise aerial image sensor (SIS, SpatialImageSensor), for the energy sensor (ES of exposing radiation dosage measurement, EnergySensor) and measure use integral micro-lens interference detection device (IMID, IntegratingMicrobeamInterferenceDetector).
SIS is a kind of sensor in measurement space picture position, substrate level place, and this spatial image is formed in mask At The Height projection indicia patterns.The projects images being positioned at substrate level place can be line image, and the wavelength of its live width and exposing radiation is suitable.SIS can also be used to measure the optical property of projection system.Different irradiation can be used to be set in the combination of different projects images to measure the multiple character of projection system, as pupil shape, spherical aberration, coma, astigmatism and the curvature of field etc.
ES is a kind ofly arranged in the sensor that lithography illuminating system measures energy density.Photoetching exposure dose is controlled by the energy density measuring etching system.Concrete grammar is the characteristic utilizing the average undulatory property of multiple pulse to require lower than exposure accuracy, controls photoetching exposure dose precision, and determines attenuation rate further, finally expose by the number of the laser pulse selecting exposure.The system of the control photoetching exposure dose of the method is used mainly to comprise laser instrument, attenuator, controller and energy sensor, system has the relatively simple advantage of structure, and uses can greatly improve photoetching exposure dose precision in conjunction with its method controlling photoetching exposure dose.
IMID is a kind of interference wavefront measurement system that can carry out static measurement to the lens aberration reaching high-order.IMID can be realized by the integrated measurement system for system initialization and calibration.
In former said apparatus, when lithography alignment system uses DUV (deep ultraviolet) light source, then this radiation source take wavelength as the quasi-molecule laser source of 248nm, 193nm is master, also can use the quasi-molecule laser source of 157nm, 126nm.In addition, the alignment system of EUV (extreme ultraviolet) impulse radiation source and X-ray pulse radiation source is used in addition; Sensor as described in patented claim CN200610019816.4, CN200410100577.6, CN200410074853.6, CN200410047698.9 can not provide the required conversion of radiation wavelength on a large scale, and the radiation wave spectrum changed is wider, the linearity of its conversion is also good not; In addition, for when to be converted radiation be impulse radiation, the whole scope of width-adjustable of the pulses of radiation be converted to is narrower, and the twilight sunset of institute's converted radiation pulse is longer, be unfavorable for the raising of impulse radiation repetition frequency, have impact on lithographic equipment dosage control performance and the raising of producing yield.
Summary of the invention
For solving the problems of the technologies described above, the invention provides a kind of energy sensor of photomask processor, comprising: sampling opticator, samples the light in illuminator; Spectrum conversion portion, becomes visible light pulses by the deep ultraviolet pulses switch in sampling light; Photoelectric conversion section, is converted to current signal by visible light pulses signal; And differential amplification output, current signal is zoomed into voltage signal and export.
Wherein, sample opticator and comprise condenser, microlens array, quartz pushrod and diaphragm.
Wherein, spectrum conversion portion comprises conversion crystal and filter plate.
Wherein, conversion crystal is YAG:Ce (cerium-doped yttrium aluminum garnet) or CaF2:Eu (mixing europium calcium fluoride) or other fluorescent powder.
Wherein, optical filter is BG39 (the glass trade mark) or other optical filter.
Wherein, photoelectric conversion part is divided into photodiode.
Wherein, differential amplification output is prime amplifier.
Preferably, also comprise attemperating unit, for controlling the temperature of spectrum conversion portion and photoelectric conversion section.
Wherein, attemperating unit is semiconductor temperature-control device, comprises temperature sensor, semiconductor chilling plate, temperature control board and heat radiator.
Preferably, also comprise mechanical framework, energy sensor each several part is assembled in mechanical framework.
Energy sensor of photomask processor of the present invention, can realize the conversion of radiation wavelength on a large scale, improves the linearity of emittance conversion and the detection accuracy of energy density, thus improves performance and the efficiency of lithographic equipment.
Accompanying drawing explanation
Can be further understood by following detailed Description Of The Invention and institute's accompanying drawings about the advantages and spirit of the present invention.
Fig. 1 is the structural representation of the present invention's lithographic equipment used;
Fig. 2 is alignment system energy sensor structural representation of the present invention.
Embodiment
Specific embodiments of the invention are described in detail below in conjunction with accompanying drawing.
Fig. 1 is the lithographic equipment structural representation of one embodiment of the invention alignment system used.Lithographic equipment 100 comprises for providing the illuminator 1 of exposing light beam and the mask platform 3 for supporting mask 2.Mask 2 there are mask pattern and the alignment mark RM with periodic structure.Lithographic equipment 100 also comprises for the mask pattern on mask 2 being projected to the projection optical system 4 of wafer 6, the chip support being used for supporting wafer 6 and wafer station 7 and being placed on the datum plate 8 wafer station 7 being carved with reference mark FM.Wafer 6 there is the alignment mark WM of periodicity optical structure.Lithographic equipment 100 also comprise aim at for mask 2 and wafer 6 off-axis alignment system 5, for mask platform 3 and the catoptron 10,16 of wafer station 7 position measurement and the servo-drive system 13 of laser interferometer 11,15 and the mask platform 3 controlled by master control system 12 and wafer station 7 displacement and drive system 9,14.
Illuminator 1 comprises light source, makes the lens combination of illumination uniformization, catoptron and condenser (all not shown in figure).Energy-probe is arranged in the light path of illuminator 1, generally makes before the lens combination light path of illumination uniformization.
Projection optical system 4 (projection objective) is positioned at below the mask platform 3 shown in Fig. 1, and its optical axis AX is parallel to Z-direction.Due to adopt double telecentric structure and have predetermined scale down as 1/5 or 1/4 refraction type or refractive and reflective optical system as projection optical system, so when illuminator 1 launch exposing light beam illuminating mask 2 on mask pattern time, the image that circuit mask pattern becomes to reduce on the wafer 6 being coated with photoresist through projection optical system 4.
Fig. 2 is the structural representation of energy sensor of the present invention, comprises sampling opticator, spectrum conversion portion, photoelectric conversion section and differential amplification output.Sampling part receives the light 714 in illuminator 1, comprises condenser 701, microlens array 702, quartz pushrod 703, diaphragm 704.Spectrum conversion portion comprises conversion crystal 705 and filter plate 706, and the deep ultraviolet pulses switch of photolithography light source is become visible light pulses.Conversion crystal is YAG:Ce or CaF2:Eu or other fluorescent powder, and doping content determines conversion efficiency, and the conversion efficiency linearity is high.Optical filter is BG39 or other optical filter, makes the visible light-transmissive after conversion with high transmitance, ends the veiling glare coming still non-switched part ultraviolet light and other scatterings from illuminator simultaneously.Photoelectric conversion part is divided into photodetector 707, will detect visible light pulses signal, and be converted into current signal.Photodetector is chosen as photodiode, and conversion efficiency is high, and dark current is little, and the linearity is high, and volume is little, is easy to change, good reliability.Differential amplification output comprises prime amplifier 708, current signal is zoomed into voltage signal output detections.Wherein, the performance of spectrum conversion crystal 705 and filter plate 706 and photodetector 707 is influenced by heat, for ensureing repeatability, the semiconductor temperature-control device of simple and feasible can be designed, comprise temperature sensor 709, semiconductor chilling plate 710, temperature control board 711 and heat radiator 712.Whole device also comprises mechanical framework 713, is assembled in mechanical framework by energy sensor each several part.
Just preferred embodiment of the present invention described in this instructions, above embodiment is only in order to illustrate technical scheme of the present invention but not limitation of the present invention.All those skilled in the art, all should be within the scope of the present invention under this invention's idea by the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (9)
1. an energy sensor of photomask processor, comprising:
Sampling opticator, comprises condenser, microlens array, quartz pushrod and diaphragm, samples the light in illuminator;
Spectrum conversion portion, becomes visible light pulses by the deep ultraviolet pulses switch in sampling light;
Photoelectric conversion section, is converted to current signal by visible light pulses signal; And
Differential amplification output, zooms into voltage signal and exports by current signal.
2. energy sensor as claimed in claim 1, wherein, spectrum conversion portion comprises conversion crystal and filter plate.
3. energy sensor as claimed in claim 2, wherein, conversion crystal is YAG:Ce (cerium-doped yttrium aluminum garnet) or CaF2:Eu (mixing europium calcium fluoride).
4. energy sensor as claimed in claim 2, wherein, optical filter is BG39.
5. energy sensor as claimed in claim 1, wherein, photoelectric conversion part is divided into photodiode.
6. energy sensor as claimed in claim 1, wherein, differential amplification output is prime amplifier.
7. energy sensor as claimed in claim 1, wherein, also comprises attemperating unit, for controlling the temperature of spectrum conversion portion and photoelectric conversion section.
8. energy sensor as claimed in claim 7, wherein, attemperating unit is semiconductor temperature-control device, comprises temperature sensor, semiconductor chilling plate, temperature control board and heat radiator.
9. energy sensor as claimed in claim 1, wherein, also comprises mechanical framework, is assembled in mechanical framework by energy sensor each several part.
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| CN201110222159.4A CN102914946B (en) | 2011-08-04 | 2011-08-04 | A kind of energy sensor of photomask processor |
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| CN201110222159.4A CN102914946B (en) | 2011-08-04 | 2011-08-04 | A kind of energy sensor of photomask processor |
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| CN102914946B true CN102914946B (en) | 2016-04-20 |
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| CN108332856B (en) * | 2017-01-19 | 2019-11-26 | 上海微电子装备（集团）股份有限公司 | ED core protective device and liquid crystal display light orientation equipment analyzing module |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6051842A (en) * | 1997-01-09 | 2000-04-18 | Nikon Corporation | Illumination optical apparatus with optical integrator |
| CN1573564A (en) * | 2003-06-09 | 2005-02-02 | Asml荷兰有限公司 | Lithographic apparatus and device manufacturing method |
| CN101989049A (en) * | 2009-07-30 | 2011-03-23 | Asml荷兰有限公司 | Lithographic apparatus and monitoring method |
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| JP2008118001A (en) * | 2006-11-07 | 2008-05-22 | Seiko Epson Corp | Luminaire, control method of luminaire, projector and monitor |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6051842A (en) * | 1997-01-09 | 2000-04-18 | Nikon Corporation | Illumination optical apparatus with optical integrator |
| CN1573564A (en) * | 2003-06-09 | 2005-02-02 | Asml荷兰有限公司 | Lithographic apparatus and device manufacturing method |
| CN101989049A (en) * | 2009-07-30 | 2011-03-23 | Asml荷兰有限公司 | Lithographic apparatus and monitoring method |
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