CN102914946A - Energy sensor of photomask processor - Google Patents
Energy sensor of photomask processor Download PDFInfo
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- CN102914946A CN102914946A CN2011102221594A CN201110222159A CN102914946A CN 102914946 A CN102914946 A CN 102914946A CN 2011102221594 A CN2011102221594 A CN 2011102221594A CN 201110222159 A CN201110222159 A CN 201110222159A CN 102914946 A CN102914946 A CN 102914946A
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Abstract
The invention provides an energy sensor of a photomask processor. The energy sensor of the photomask processor comprises a sampling optical part, a spectrum conversion part, a photoelectric conversion part, and a differential amplifying output part, wherein the sampling optical part samples a ray in an illumination system; the spectrum conversion part converts a deep ultraviolet impulse in the sampled ray into a visible light pulse; the photoelectric conversion part converts the visible light pulse signal into a current signal, and the differential amplifying output part amplifies the current signal into a voltage signal to output. According to the energy sensor of the photomask processor disclosed by the invention, conversion of a large-range radiation wavelength can be achieved, and the probe accuracy of the linearity and energy density of radiation energy conversion is improved. Thus, the dose control performance and the production yield of the photomask processor are improved.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly relate to a kind of energy density acquisition sensor device for lithographic equipment.
Background technology
In commercial plant, since the needs of high precision and high production capacity, the control system of distributing a large amount of high speed real time sensor measurements, signal sampling, data acquisition, exchanges data and communications etc.These systems need us to adopt various ways to realize that sensor detections, signal sampling control, data acquisition control, exchanges data control the control of communicating by letter with data transmission etc.Have the device of this demand for control to comprise: integrated circuit is made lithographic equipment, panel display board lithographic equipment, MEMS/MOEMS lithographic equipment, Advanced Packaging lithographic equipment, printed circuit board (PCB) lithographic equipment, printed circuit board (PCB) processing unit (plant) and printing circuit board element mounting device etc.
Lithographic equipment is a kind of required pattern to be applied to device on the workpiece.Normally required pattern is applied to the device on the target part on the workpiece.Lithographic equipment can be used for for example manufacturing of integrated circuit (IC).In this case, mask plate can be used for producing the circuit pattern that forms at individual course of IC, and this pattern can be delivered to by projection system the target part of workpiece (such as silicon wafer), for example comprises a part, on one or more tube core.Normally by being provided, one deck radiation-sensitive materials (resist) that provides on the workpiece comes up to copy in proportion required image.Known lithographic equipment also comprises scanner, uses radiation laser beam to scan described pattern along given direction (" scanning " direction), and simultaneously along coming each target part of irradiation with the parallel or antiparallel direction synchronous scanning of this direction workpiece.Can also be by pattern being stamped on the workpiece and pattern is generated on the workpiece by patterning device.
A plurality of sensors that utilization is positioned at the substrate level place evaluate and optimize imaging performance.These sensors can comprise spatial image sensor (SIS, Spatial Image Sensor), the energy sensor (ES that is used for the exposing radiation dosage measurement, Energy Sensor) and the integral micro-lens interference detection device (IMID, Integrating Microbeam Interference Detector) that measure to use.
SIS is a kind of sensor in measurement space picture position, substrate level place, and this spatial image forms in mask At The Height projection indicia patterns.The projects images that is positioned at the substrate level place can be line image, and the wavelength of its live width and exposing radiation is suitable.Can also measure with SIS the optical property of projection system.Can shine the multiple character that projection system is measured in the combination that is set in different projects images with difference, such as pupil shape, spherical aberration, coma, astigmatism and the curvature of field etc.
ES is a kind of sensor that lithography illuminating system is measured energy density that is arranged in.By measuring the energy density control photoetching exposure dose of etching system.Concrete grammar is to utilize the average undulatory property of a plurality of pulses to be lower than the characteristic that exposure accuracy requires, and the number of the laser pulse by selecting exposure is controlled the photoetching exposure dose precision, and further determines attenuation rate, exposes at last.Use the system of the control photoetching exposure dose of the method mainly to comprise laser instrument, attenuator, controller and energy sensor, system has the relatively simple advantage of structure, and can greatly improve the photoetching exposure dose precision in conjunction with the method use of its control photoetching exposure dose.
IMID is a kind of interference wavefront measurement system that can carry out to the lens aberration that reaches high-order static measurement.IMID can realize by the integral measuring system that is used for system initialization and calibration.
In the former said apparatus, what use when the lithography alignment system is DUV (deep ultraviolet) light source, then this radiation source take wavelength as 248nm, the quasi-molecule laser source of 193nm is as main, also can use the quasi-molecule laser source of 157nm, 126nm.In addition, use in addition the alignment system of EUV (extreme ultraviolet) impulse radiation source and X ray impulse radiation source; Sensor described in patented claim CN200610019816.4, CN200410100577.6, CN200410074853.6, CN200410047698.9 can not provide the required conversion of radiation wavelength on a large scale, and the radiation wave spectrum of changing is wider, and the linearity of its conversion is also good not; In addition, when being converted radiation and being impulse radiation, the width adjustable range of the pulses of radiation that are converted to is narrower, and the twilight sunset of the pulses of radiation of changing is longer, be unfavorable for the raising of impulse radiation repetition frequency, affected lithographic equipment dosage control performance and the raising of producing yield.
Summary of the invention
For solving the problems of the technologies described above, the invention provides a kind of lithographic equipment energy sensor, comprising: the sampling opticator, the light in the illuminator is taken a sample; The spectrum conversion portion becomes visible light pulses with the deep ultraviolet pulses switch in the sampling light; Photoelectric conversion section is converted to current signal with the visible light pulses signal; And the differential amplification output, current signal is zoomed into voltage signal output.
Wherein, the sampling opticator comprises condenser, microlens array, quartz pushrod and diaphragm.
Wherein, the spectrum conversion portion comprises conversion crystal and filter plate.
Wherein, the conversion crystal is YAG:Ce (cerium-doped yttrium aluminum garnet) or CaF2:Eu (mixing europium calcium fluoride) or other fluorescent powder.
Wherein, optical filter is BG39 (the glass trade mark) or other optical filter.
Wherein, photoelectric conversion part is divided into photodiode.
Wherein, the differential amplification output is prime amplifier.
Preferably, also comprise attemperating unit, be used for the temperature of control spectrum conversion portion and photoelectric conversion section.
Wherein, attemperating unit is the semiconductor temperature-control device, comprises temperature sensor, semiconductor chilling plate, temperature control integrated circuit board and heat radiator.
Preferably, also comprise mechanical framework, the energy sensor each several part is assembled in the mechanical framework.
Lithographic equipment energy sensor of the present invention can be realized the conversion of radiation wavelength on a large scale, improves the linearity of emittance conversion and the detection accuracy of energy density, thereby improves performance and the efficient of lithographic equipment.
Description of drawings
Can be by following detailed Description Of The Invention and appended graphic being further understood about the advantages and spirit of the present invention.
Fig. 1 is the structural representation of the used lithographic equipment of the present invention;
Fig. 2 is alignment system energy sensor structural representation of the present invention.
Embodiment
Describe specific embodiments of the invention in detail below in conjunction with accompanying drawing.
Fig. 1 is the lithographic equipment structural representation of the used alignment system of one embodiment of the invention.Lithographic equipment 100 comprises be used to the illuminator 1 that exposing light beam is provided and for the mask platform 3 that supports mask 2.The alignment mark RM that mask pattern is arranged on the mask 2 and have periodic structure.Lithographic equipment 100 also comprises for the projection optical system 4 that the mask pattern on the mask 2 is projected to wafer 6, is used for chip support and the wafer station 7 of supporting wafer 6 and is placed on the datum plate 8 that is carved with reference mark FM on the wafer station 7.The alignment mark WM that the periodicity optical structure is arranged on the wafer 6.Lithographic equipment 100 also comprises the off-axis alignment system 5 of aiming at for mask 2 and wafer 6, the catoptron 10 that is used for mask platform 3 and wafer station 7 position measurements, 16 and laser interferometer 11,15 and by the mask platform 3 of master control system 12 controls and servo-drive system 13 and the drive system 9,14 of wafer station 7 displacements.
Projection optical system 4 (projection objective) is positioned at mask platform shown in Figure 13 belows, and its optical axis AX is parallel to Z-direction.Since adopt two core structures far away and have predetermined scale down such as 1/5 or 1/4 refraction type or refractive and reflective optical system as projection optical system, so when the mask pattern on the exposing light beam illuminating mask 2 of illuminator 1 emission, the image that the circuit mask pattern dwindles 6 one-tenth of the wafers that is coated with photoresist through projection optical system 4.
Fig. 2 is the structural representation of energy sensor of the present invention, comprises sampling opticator, spectrum conversion portion, photoelectric conversion section and differential amplification output.Sampling part receives the light 714 in the illuminator 1, comprises condenser 701, microlens array 702, quartz pushrod 703, diaphragm 704.The spectrum conversion portion comprises conversion crystal 705 and filter plate 706, and the deep ultraviolet pulses switch of photoetching light source is become visible light pulses.The conversion crystal is YAG:Ce or CaF2:Eu or other fluorescent powder, and doping content determines conversion efficiency, and the conversion efficiency linearity is high.Optical filter is BG39 or other optical filter, with high transmitance the visible light after the conversion is seen through, and ends simultaneously from illuminator and comes the still veiling glare of non-switched part ultraviolet light and other scatterings.Photoelectric conversion part is divided into photodetector 707, will survey the visible light pulses signal, is converted into current signal.Photodetector is chosen as photodiode, and conversion efficiency is high, and dark current is little, and the linearity is high, and volume is little, is easy to change good reliability.The differential amplification output comprises prime amplifier 708, and current signal is zoomed into the voltage signal output detections.Wherein, the performance of spectrum conversion crystal 705 and filter plate 706 and photodetector 707 is influenced by heat, for guaranteeing repeatability, can design the semiconductor temperature-control device of simple and feasible, comprise temperature sensor 709, semiconductor chilling plate 710, temperature control integrated circuit board 711 and heat radiator 712.Whole device also comprises mechanical framework 713, and the energy sensor each several part is assembled in the mechanical framework.
Described in this instructions is preferred embodiment of the present invention, and above embodiment is only in order to illustrate technical scheme of the present invention but not limitation of the present invention.All those skilled in the art all should be within the scope of the present invention under this invention's idea by the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (10)
1. lithographic equipment energy sensor comprises:
The sampling opticator is taken a sample to the light in the illuminator;
The spectrum conversion portion becomes visible light pulses with the deep ultraviolet pulses switch in the sampling light;
Photoelectric conversion section is converted to current signal with the visible light pulses signal; And
The differential amplification output zooms into voltage signal output with current signal.
2. energy sensor as claimed in claim 1, wherein, the sampling opticator comprises condenser, microlens array, quartz pushrod and diaphragm.
3. energy sensor as claimed in claim 1, wherein, the spectrum conversion portion comprises conversion crystal and filter plate.
4. energy sensor as claimed in claim 3, wherein, the conversion crystal is YAG:Ce (cerium-doped yttrium aluminum garnet) or CaF2:Eu (mixing europium calcium fluoride) or other fluorescent powder.
5. energy sensor as claimed in claim 3, wherein, optical filter is BG39 or other optical filter.
6. energy sensor as claimed in claim 1, wherein, photoelectric conversion part is divided into photodiode.
7. energy sensor as claimed in claim 1, wherein, the differential amplification output is prime amplifier.
8. energy sensor as claimed in claim 1 wherein, also comprises attemperating unit, is used for the temperature of control spectrum conversion portion and photoelectric conversion section.
9. energy sensor as claimed in claim 8, wherein, attemperating unit is the semiconductor temperature-control device, comprises temperature sensor, semiconductor chilling plate, temperature control integrated circuit board and heat radiator.
10. energy sensor as claimed in claim 1 wherein, also comprises mechanical framework, and the energy sensor each several part is assembled in the mechanical framework.
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| CN201110222159.4A CN102914946B (en) | 2011-08-04 | 2011-08-04 | A kind of energy sensor of photomask processor |
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| CN201110222159.4A CN102914946B (en) | 2011-08-04 | 2011-08-04 | A kind of energy sensor of photomask processor |
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| CN102914946B CN102914946B (en) | 2016-04-20 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20180085703A (en) * | 2017-01-19 | 2018-07-27 | 상하이 마이크로 일렉트로닉스 이큅먼트(그룹) 컴퍼니 리미티드 | Energy detector core protection apparatus and inspection module for liquid crystal display optical alignment apparatus |
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| US6051842A (en) * | 1997-01-09 | 2000-04-18 | Nikon Corporation | Illumination optical apparatus with optical integrator |
| CN1573564A (en) * | 2003-06-09 | 2005-02-02 | Asml荷兰有限公司 | Lithographic apparatus and device manufacturing method |
| JP2008118001A (en) * | 2006-11-07 | 2008-05-22 | Seiko Epson Corp | Luminaire, control method of luminaire, projector and monitor |
| CN101989049A (en) * | 2009-07-30 | 2011-03-23 | Asml荷兰有限公司 | Lithographic apparatus and monitoring method |
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2011
- 2011-08-04 CN CN201110222159.4A patent/CN102914946B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6051842A (en) * | 1997-01-09 | 2000-04-18 | Nikon Corporation | Illumination optical apparatus with optical integrator |
| CN1573564A (en) * | 2003-06-09 | 2005-02-02 | Asml荷兰有限公司 | Lithographic apparatus and device manufacturing method |
| JP2008118001A (en) * | 2006-11-07 | 2008-05-22 | Seiko Epson Corp | Luminaire, control method of luminaire, projector and monitor |
| CN101989049A (en) * | 2009-07-30 | 2011-03-23 | Asml荷兰有限公司 | Lithographic apparatus and monitoring method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20180085703A (en) * | 2017-01-19 | 2018-07-27 | 상하이 마이크로 일렉트로닉스 이큅먼트(그룹) 컴퍼니 리미티드 | Energy detector core protection apparatus and inspection module for liquid crystal display optical alignment apparatus |
| CN108332856A (en) * | 2017-01-19 | 2018-07-27 | 上海微电子装备（集团）股份有限公司 | ED cores protective device and liquid crystal display light orientation equipment analyzing module |
| KR102048622B1 (en) | 2017-01-19 | 2019-11-25 | 상하이 마이크로 일렉트로닉스 이큅먼트(그룹) 컴퍼니 리미티드 | Energy detector core protection apparatus and inspection module for liquid crystal display optical alignment apparatus |
| CN108332856B (en) * | 2017-01-19 | 2019-11-26 | 上海微电子装备（集团）股份有限公司 | ED core protective device and liquid crystal display light orientation equipment analyzing module |
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| CN102914946B (en) | 2016-04-20 |
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Address after: 201203 1525 Zhang Dong Road, Zhangjiang hi tech park, Pudong District, Shanghai Patentee after: Shanghai microelectronics equipment (Group) Limited by Share Ltd Address before: 201203 1525 Zhang Dong Road, Zhangjiang hi tech park, Pudong District, Shanghai Patentee before: Shanghai Micro Electronics Equipment Co., Ltd. |