CN102903387A - 存储阵列装置及其减小读电流的方法 - Google Patents
存储阵列装置及其减小读电流的方法 Download PDFInfo
- Publication number
- CN102903387A CN102903387A CN2012103668699A CN201210366869A CN102903387A CN 102903387 A CN102903387 A CN 102903387A CN 2012103668699 A CN2012103668699 A CN 2012103668699A CN 201210366869 A CN201210366869 A CN 201210366869A CN 102903387 A CN102903387 A CN 102903387A
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- CN
- China
- Prior art keywords
- storage array
- zone bit
- data
- sub
- programming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
- G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/24—Bit-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
Abstract
Description
Claims (8)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2012103668699A CN102903387A (zh) | 2012-09-27 | 2012-09-27 | 存储阵列装置及其减小读电流的方法 |
US13/963,361 US9153322B2 (en) | 2012-09-27 | 2013-08-09 | Memory array device and method for reducing read current of the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2012103668699A CN102903387A (zh) | 2012-09-27 | 2012-09-27 | 存储阵列装置及其减小读电流的方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN102903387A true CN102903387A (zh) | 2013-01-30 |
Family
ID=47575589
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN2012103668699A Pending CN102903387A (zh) | 2012-09-27 | 2012-09-27 | 存储阵列装置及其减小读电流的方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9153322B2 (zh) |
CN (1) | CN102903387A (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103761990A (zh) * | 2014-02-19 | 2014-04-30 | 上海新储集成电路有限公司 | 一种减少只读存储器漏电流的方法 |
CN104681085A (zh) * | 2015-03-03 | 2015-06-03 | 中国科学院微电子研究所 | 一种基于翻转编码电路的阻变存储器及相应数据存储方法 |
CN112466364A (zh) * | 2019-09-09 | 2021-03-09 | 新唐科技股份有限公司 | 存储器装置、写入方法以及读取方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020188798A1 (en) * | 2001-06-07 | 2002-12-12 | Mitsubishi Denki Kabushiki Kaisha | Data processor and data processing method reduced in power consumption during memory access |
US6963501B2 (en) * | 2003-10-10 | 2005-11-08 | Kabushiki Kaisha Toshiba | Nonvolatile memory |
CN101783165A (zh) * | 2010-03-26 | 2010-07-21 | 上海宏力半导体制造有限公司 | 一种半导体存储器、半导体存储器系统及其对应编程方法 |
US20110113168A1 (en) * | 2006-08-14 | 2011-05-12 | Jung-Yong Choi | Methods of Communicating Data Using Inversion and Related Systems |
CN102479551A (zh) * | 2010-11-25 | 2012-05-30 | 三星电子株式会社 | 非易失性存储器件及其读取方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005191413A (ja) * | 2003-12-26 | 2005-07-14 | Toshiba Corp | 不揮発性半導体記憶装置 |
US20070039060A1 (en) * | 2005-08-12 | 2007-02-15 | Jamieson Georges E | Methods and systems for programming secure data into programmable and irreversible cells |
US7577028B2 (en) * | 2007-03-23 | 2009-08-18 | Intel Corporation | Memory storage technique for a bi-directionally programmable memory device |
KR100857252B1 (ko) * | 2007-12-27 | 2008-09-05 | (주)인디링스 | 마모도를 비트 수준에서 평준화하는 플래시 메모리 장치 및플래시 메모리 프로그래밍 방법 |
US8787059B1 (en) * | 2011-12-05 | 2014-07-22 | Netlogic Microsystems, Inc. | Cascaded content addressable memory array having multiple row segment activation |
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2012
- 2012-09-27 CN CN2012103668699A patent/CN102903387A/zh active Pending
-
2013
- 2013-08-09 US US13/963,361 patent/US9153322B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020188798A1 (en) * | 2001-06-07 | 2002-12-12 | Mitsubishi Denki Kabushiki Kaisha | Data processor and data processing method reduced in power consumption during memory access |
US6963501B2 (en) * | 2003-10-10 | 2005-11-08 | Kabushiki Kaisha Toshiba | Nonvolatile memory |
US20110113168A1 (en) * | 2006-08-14 | 2011-05-12 | Jung-Yong Choi | Methods of Communicating Data Using Inversion and Related Systems |
CN101783165A (zh) * | 2010-03-26 | 2010-07-21 | 上海宏力半导体制造有限公司 | 一种半导体存储器、半导体存储器系统及其对应编程方法 |
CN102479551A (zh) * | 2010-11-25 | 2012-05-30 | 三星电子株式会社 | 非易失性存储器件及其读取方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103761990A (zh) * | 2014-02-19 | 2014-04-30 | 上海新储集成电路有限公司 | 一种减少只读存储器漏电流的方法 |
CN104681085A (zh) * | 2015-03-03 | 2015-06-03 | 中国科学院微电子研究所 | 一种基于翻转编码电路的阻变存储器及相应数据存储方法 |
CN104681085B (zh) * | 2015-03-03 | 2018-09-04 | 中国科学院微电子研究所 | 一种基于翻转编码电路的阻变存储器及相应数据存储方法 |
CN112466364A (zh) * | 2019-09-09 | 2021-03-09 | 新唐科技股份有限公司 | 存储器装置、写入方法以及读取方法 |
Also Published As
Publication number | Publication date |
---|---|
US9153322B2 (en) | 2015-10-06 |
US20140085986A1 (en) | 2014-03-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140423 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20140423 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20130130 |