CN102887476A - Hanger beam structure and circuit chip - Google Patents

Hanger beam structure and circuit chip Download PDF

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Publication number
CN102887476A
CN102887476A CN2011102052384A CN201110205238A CN102887476A CN 102887476 A CN102887476 A CN 102887476A CN 2011102052384 A CN2011102052384 A CN 2011102052384A CN 201110205238 A CN201110205238 A CN 201110205238A CN 102887476 A CN102887476 A CN 102887476A
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China
Prior art keywords
suspention
conducting wire
wire structure
main body
metallic conducting
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CN2011102052384A
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Chinese (zh)
Inventor
杨进盛
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United Microelectronics Corp
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United Microelectronics Corp
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Priority to CN2011102052384A priority Critical patent/CN102887476A/en
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Abstract

The invention provides a hanger beam structure and a circuit chip comprising the same. The hanger beam structure comprises a base plate, a hanger beam main body and a first metal conducting wire structure, wherein one end of the hanger beam main body is fixed to the base plate, and the other end is hung in the air; and the first metal conducting wire structure is embedded in the hanger beam main body, and the width of the first metal conducting wire structure is smaller than that of the hanger beam main body.

Description

Suspention girder construction and circuit chip
Technical field
The present invention relates to a kind of suspention girder construction, espespecially be applied to the suspention girder construction in the MEMS.
Background technology
MEMS (Micro Electro-Mechanical Systems is called for short MEMS) mainly is to utilize semiconductor technology to produce frame for movement on silicon, and then develops the semiconductor transducer that is combined into machinery and electronic component.See also Fig. 1, it is suspention girder construction top view common in the MEMS, and an end 101 that wherein suspends beam (suspended beam) 10 in midair is fixed to silicon substrate 1, and 100 of the other ends are unsettled.And this type of suspention girder construction can be widely used in the multiple sensors element, for example utilizes the variable in distance of two adjacent suspention beams just can finish variable capacitance, and then finishes the sensor element such as accelerometer.But at present known suspention girder construction also is unfavorable for being integrated in the control circuit chip, and how to improve this type of deficiency, is development main purpose of the present invention.
Summary of the invention
The object of the invention is to propose a kind of suspention girder construction, it comprises: substrate; Suspention beam main body, the one end is fixed to substrate, and the other end is unsettled; And first metallic conducting wire structure, being embedded among the suspention beam main body, the width of the first metallic conducting wire structure is less than the width of suspention beam main body.
In an embodiment of the present invention, aforesaid substrate is silicon substrate.
In an embodiment of the present invention, above-mentioned suspention beam main body is made of one dielectric layer or multilayer dielectric layer.
In an embodiment of the present invention, the material of above-mentioned dielectric layer is silica.
In an embodiment of the present invention, above-mentioned the first metallic conducting wire structure is embedded in the part end face of above-mentioned suspention beam main body and exposes.
In an embodiment of the present invention, above-mentioned the first metallic conducting wire structure is embedded in the end face periphery of above-mentioned suspention beam main body and exposes.
In an embodiment of the present invention, above-mentioned the first metallic conducting wire structure is embedded in the inside of above-mentioned suspention beam main body and does not expose.
In an embodiment of the present invention, also comprise the second metallic conducting wire structure, above-mentioned the second metallic conducting wire structure is embedded in the above-mentioned suspention beam main body and sees through at least one open-work metal and finishes with above-mentioned the first metallic conducting wire structure and be connected.
Another purpose of the present invention is to propose a kind of circuit chip, and it comprises: substrate; The integrated circuit component structure is formed at this substrate top, and it has sandwich construction; The MEMS tectonic province is formed at this substrate top, wherein has at least the suspention girder construction, and this suspention girder construction comprises: suspention beam main body, and the one end is fixed to this substrate, and the other end is unsettled; And first metallic conducting wire structure, being embedded among this suspention beam main body, the width of this first metallic conducting wire structure is less than the width of this suspention beam main body.
Description of drawings
Fig. 1 is suspention girder construction top view common in the MEMS.
Fig. 2 A is the top view of a kind of embodiment of suspention girder construction.
Fig. 2 B is the example profile of the suspention girder construction section along the line AA of Fig. 2 A.
Fig. 2 C is another example profile of the suspention girder construction section along the line AA of Fig. 2 A.
Fig. 3 A is the top view of the another kind of embodiment of suspention girder construction of the present invention.
Fig. 3 B is the example profile of the suspention girder construction section along the line BB of Fig. 3 A.
Fig. 3 C is another example profile of the suspention girder construction section along the line BB of Fig. 3 A.
Fig. 3 D is the another example profile of the suspention girder construction section along the line BB of Fig. 3 A.
Fig. 4 A is the top view of another embodiment of suspention girder construction of the present invention.
Fig. 4 B is the example profile of the suspention girder construction section along the line CC of Fig. 4 A.
Fig. 4 C is another example profile of the suspention girder construction section along the line CC of Fig. 4 A.
Fig. 4 D is the another example profile of the suspention girder construction section along the line CC of Fig. 4 A.
Fig. 5 A is the top view of another embodiment of suspention girder construction of the present invention.
Fig. 5 B is the example profile of the suspention girder construction section along the line DD of Fig. 5 A.
Fig. 5 C is another example profile of the suspention girder construction section along the line DD of Fig. 5 A.
Fig. 5 D is the another example profile of the suspention girder construction section along the line DD of Fig. 5 A.
Fig. 6 is integrated into structure section schematic diagram in the IC chip for the present invention being suspended in midair girder construction.
Description of reference numerals
Figure BDA0000077368240000021
The specific embodiment
See also Fig. 2 A, it is the top view of a kind of embodiment of suspention girder construction, finds out by knowing among the figure, and an end 201 of suspention beam 20 is fixed to silicon substrate 2, and 200 of the other ends are unsettled.The end face of suspention beam 20 and silicon substrate 2 is covering metal layer 202 then, and metal level 202 is in order to finish the battery lead plate of electric capacity.The profile of section AA along the line is then shown in Fig. 2 B or Fig. 2 C, wherein Fig. 2 B is double-layer structure, suspention beam 20 is made of dielectric layer 203 and metal level 202, and Fig. 2 C is four-layer structure, suspention beam 20 is made of with metal level 202,204 dielectric layer 203,205, then is as for the silicon substrate of suspention beam 20 bottoms that etched emptying and allowing suspended beam 20 in midair unsettled.The present embodiment only is made of dielectric layer and metal level, and simple structure will be conducive to be integrated in the general IC chip.But because the material behavior difference of dielectric layer and metal level is excessive, when causing through follow-up high-temperature technology, metal level is easily crooked and make and suspend beam 20 in midair and will produce the deformation of not expecting, causes the follow-up sensor element of finishing can't normal operation.
So, the inventor reintroduces another embodiment and improves this deficiency, see also Fig. 3 A, its inventor develop is about the top view of the second embodiment of suspention girder construction, find out by knowing among the figure, one end 301 of suspention beam 30 is fixed to silicon substrate 3, and 300 silicon substrate 3 etched emptying because of suspention beam 30 bottoms of the other end make suspention beam 30 unsettled.And in the present embodiment, the end face of suspention beam 30 will not exclusively be covered by metal, but by 3020 of metallic conducting wire structures around, metallic conducting wire structure 3020 is in order to finish the battery lead plate in the electric capacity.The profile of 30 along the line sections BB of suspention beam can wherein suspend beam 30 main bodys in midair and be finished by dielectric layer 303 shown in Fig. 3 B, can be finished by the metal that is embedded in the dielectric layer 303 as for metallic conducting wire structure 3020.Compare with the embodiment shown in Fig. 2 A and Fig. 2 B, the metallic conducting wire structure 3020 of the present embodiment only is surrounded on the end face periphery of suspention beam 30, therefore so that metallic conducting wire structure 3020 decline to a great extent because high-temperature technology causes suspending in midair the effect that beam 30 produces deformation.
In addition, the profile of 30 along the line sections BB of suspention beam also can be shown in Fig. 3 C or Fig. 3 D, suspention beam 30 can by multilayer dielectric layer 303,305 and multiple layer metal conductor structure 3020,3040 consist of, the metallic conducting wire structure 3020 among the different Fig. 3 of the being D of Fig. 3 C and Fig. 3 D, 3040 have open-work metal 308 and finish connection.
See also Fig. 4 A, it finds out by knowing among the figure for the top view of another embodiment of inventor's proposition about the suspention girder construction, and an end 401 that suspends beam 40 in midair is fixed to silicon substrate 4, and 400 of the other ends are unsettled.And in the present embodiment, the end face of suspention beam 40 is also not exclusively covered by metal, but is covered by metallic conducting wire structure 4020, and metallic conducting wire structure 4020 is in order to finish the battery lead plate in the electric capacity.The profile of 40 along the line sections CC of suspention beam can wherein suspend beam 40 main bodys in midair and be finished by dielectric layer 403 shown in Fig. 4 B, can be finished by the metal that is embedded in the dielectric layer 403 as for metallic conducting wire structure 4020.Compare with the embodiment shown in Fig. 2 A and Fig. 2 B, the metallic conducting wire structure 4020 of the present embodiment only is embedded in the part end face of dielectric layer 403 and periphery and width all less than the width of dielectric layer 403, therefore so that metallic conducting wire structure 4020 decline to a great extent because high-temperature technology causes suspending in midair the effect that beam 40 produces deformation.
In addition, the profile of 40 along the line sections CC of suspention beam also can be shown in Fig. 4 C or Fig. 4 D, suspention beam 40 can by multilayer dielectric layer 403,405 and multiple layer metal conductor structure 4020,4040 consist of, the metallic conducting wire structure 4020 among the different Fig. 4 of the being D of Fig. 4 C and Fig. 4 D, 4040 have open-work metal 408 and finish connection.
See also Fig. 5 A, it finds out by knowing among the figure for the top view of another embodiment of inventor's proposition about the suspention girder construction again, and an end 501 that suspends beam 50 in midair is fixed to silicon substrate 5, and 500 of the other ends are unsettled.And in the present embodiment, the end face of suspention beam 50 is not covered by plain conductor fully, is embedded in the dielectric layer 503 and does not expose as for finishing the required metallic conducting wire structure 5020 of battery lead plate in the electric capacity.The profile of suspention beam 50 along the line sections DD can wherein suspend beam 50 main bodys in midair and be finished by dielectric layer 503 shown in Fig. 5 B, can be by being embedded in the dielectric layer 503 and the metal that does not expose is finished as for metallic conducting wire structure 5020.Compare with the embodiment shown in Fig. 2 A and Fig. 2 B, the metallic conducting wire structure 5020 of the present embodiment only is embedded in the inside of dielectric layer 503 and width all less than the width of dielectric layer 503, therefore so that metallic conducting wire structure 5020 decline to a great extent because high-temperature technology causes suspending in midair the effect that beam 50 produces deformation.
In addition, the profile of 50 along the line sections DD of suspention beam also can be shown in Fig. 5 C or Fig. 5 D, suspention beam 50 can by multilayer dielectric layer 503,505 and multiple layer metal conductor structure 5020,5040 consist of, the metallic conducting wire structure 5020 among the different Fig. 5 of the being D of Fig. 5 C and Fig. 5 D, 5040 have open-work metal 508 and finish connection.
See also again Fig. 6, it is to suspend the present invention in midair girder construction to be integrated into structure section schematic diagram in the IC chip, by finding out among the figure, finished integrated circuit component structure 60 on the silicon substrate 6, and have the sandwich construction 600 that multilayer dielectric layer and conductor layer are staggeredly stacked in the integrated circuit component structure 60, and when from bottom to top finishing these sandwich constructions 600, also can be at the various metal damascene structure of 61 formation of MEMS (MEMS) tectonic province as above-mentioned embodiment, then the patterns of openings of utilizing hard mask 62 to define is out come the metal damascene structure in MEMS (MEMS) tectonic province 61 is carried out etching and the silicon substrate 6 of bottom is drawn out space 69, and then defines a plurality of parallel suspention girder constructions 63.Hard mask 62 is except can utilizing the preferred metal mask of blocking capability, also can directly finish with the superiors' metal carbonyl conducting layer in the sandwich construction 600, above-mentioned hard mask 62 roughly exhausts after above-mentioned suspention girder construction 63 definition are finished usually, but also might have remnants, but thickness is usually very thin, can't affect structure generation, not process therefore can stay, can certainly be divested.And above-mentioned dielectric layer can be finished with silica, then can be common copper conductor or the metal materials such as aluminium, tungsten as for metal level or metallic conducting wire structure, or the alloy of metal material etc.
In sum, after the present invention improves technology, can effectively improve the problem of any means known.Although the present invention discloses as above with preferred embodiment; so it is not to limit the present invention, any persons skilled in the art, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention defines and is as the criterion when looking claim.

Claims (16)

1. one kind is suspended in midair girder construction, comprising:
Substrate;
Suspention beam main body, the one end is fixed to this substrate, and the other end is unsettled; And
The first metallic conducting wire structure is embedded among this suspention beam main body, and the width of this first metallic conducting wire structure is less than the width of this suspention beam main body.
2. suspention girder construction as claimed in claim 1, wherein this substrate is silicon substrate.
3. suspention girder construction as claimed in claim 1, wherein this suspention beam main body is made of one dielectric layer or multilayer dielectric layer.
4. suspention girder construction as claimed in claim 3, wherein the material of this dielectric layer is silica.
5. suspention girder construction as claimed in claim 1, wherein this first metallic conducting wire structure is embedded in the part end face of this suspention beam main body and exposes.
6. suspention girder construction as claimed in claim 1, wherein this first metallic conducting wire structure is embedded in the end face periphery of this suspention beam main body and exposes.
7. suspention girder construction as claimed in claim 1, wherein this first metallic conducting wire structure is embedded in the inside of this suspention beam main body and does not expose.
8. suspention girder construction as claimed in claim 1 wherein also comprises the second metallic conducting wire structure, and this second metallic conducting wire structure is embedded in this suspention beam main body and sees through at least one open-work metal and finishes with this first metallic conducting wire structure and be connected.
9. circuit chip comprises:
Substrate;
The integrated circuit component structure is formed at this substrate top, has sandwich construction;
The MEMS tectonic province is formed at this substrate top, has at least a suspention girder construction, and this suspention girder construction comprises:
Suspention beam main body, the one end is fixed to this substrate, and the other end is unsettled; And
The first metallic conducting wire structure is embedded among this suspention beam main body, and the width of this first metallic conducting wire structure is less than the width of this suspention beam main body.
10. circuit chip as claimed in claim 9, wherein this suspention beam main body is made of one dielectric layer or multilayer dielectric layer.
11. circuit chip as claimed in claim 9, wherein this first metallic conducting wire structure is embedded in the part end face of this suspention beam main body and exposes.
12. circuit chip as claimed in claim 9, wherein this first metallic conducting wire structure is embedded in the end face periphery of this suspention beam main body and exposes.
13. circuit chip as claimed in claim 9, wherein this first metallic conducting wire structure is embedded in the inside of this suspention beam main body and does not expose.
14. circuit chip as claimed in claim 9 wherein also comprises the second metallic conducting wire structure, this second metallic conducting wire structure is embedded in this suspention beam main body and sees through at least one open-work metal and finishes with this first metallic conducting wire structure and be connected.
15. circuit chip as claimed in claim 9 wherein should suspend the part that girder construction consists of electric capacity in midair.
16. circuit chip as claimed in claim 9, wherein the material of this first metallic conducting wire structure is copper, aluminium or tungsten.
CN2011102052384A 2011-07-21 2011-07-21 Hanger beam structure and circuit chip Pending CN102887476A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104573146A (en) * 2013-10-16 2015-04-29 联华电子股份有限公司 Clock signal transmission adjusting method and related integrated circuit structure
US9678530B2 (en) 2013-09-25 2017-06-13 United Microelectronics Corporation Clock skew adjusting structure

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5187367A (en) * 1990-08-14 1993-02-16 Canon Kabushiki Kaisha Cantilever type probe, scanning tunneling microscope and information processing device equipped with said probe
JPH06313847A (en) * 1993-04-28 1994-11-08 Canon Inc Cantilever type actuator, cantilever type probe, and scanning tunneling microscope and information processor using these actuator and probe
US20020148807A1 (en) * 2001-04-12 2002-10-17 Yang Zhao Method of etching a deep trench in a substrate and method of fabricating on-chip devices and micro-machined structures using the same
CN1716639A (en) * 2004-06-30 2006-01-04 国际商业机器公司 Micro electro-mechanical variable capacitor
CN101438366A (en) * 2006-03-08 2009-05-20 维斯普瑞公司 Micro-electro-mechanical system (MEMS) variable capacitors and actuation components and related methods
CN102001613A (en) * 2009-09-02 2011-04-06 原相科技股份有限公司 Microelectronic device and manufacturing method thereof, and micro electromechanical packaging structure and packaging method thereof
TW201113979A (en) * 2009-10-07 2011-04-16 United Microelectronics Corp Integrated circuit having microelectromechanical system device and method of fabricating the same

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5187367A (en) * 1990-08-14 1993-02-16 Canon Kabushiki Kaisha Cantilever type probe, scanning tunneling microscope and information processing device equipped with said probe
JPH06313847A (en) * 1993-04-28 1994-11-08 Canon Inc Cantilever type actuator, cantilever type probe, and scanning tunneling microscope and information processor using these actuator and probe
US20020148807A1 (en) * 2001-04-12 2002-10-17 Yang Zhao Method of etching a deep trench in a substrate and method of fabricating on-chip devices and micro-machined structures using the same
CN1716639A (en) * 2004-06-30 2006-01-04 国际商业机器公司 Micro electro-mechanical variable capacitor
CN101438366A (en) * 2006-03-08 2009-05-20 维斯普瑞公司 Micro-electro-mechanical system (MEMS) variable capacitors and actuation components and related methods
CN102001613A (en) * 2009-09-02 2011-04-06 原相科技股份有限公司 Microelectronic device and manufacturing method thereof, and micro electromechanical packaging structure and packaging method thereof
TW201113979A (en) * 2009-10-07 2011-04-16 United Microelectronics Corp Integrated circuit having microelectromechanical system device and method of fabricating the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9678530B2 (en) 2013-09-25 2017-06-13 United Microelectronics Corporation Clock skew adjusting structure
CN104573146A (en) * 2013-10-16 2015-04-29 联华电子股份有限公司 Clock signal transmission adjusting method and related integrated circuit structure
CN104573146B (en) * 2013-10-16 2018-01-23 联华电子股份有限公司 Clock signal transmission method of adjustment and integrated circuit related with same structure

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Application publication date: 20130123