CN102882493A - Continuous high-repetition-frequency high-voltage pulse source - Google Patents
Continuous high-repetition-frequency high-voltage pulse source Download PDFInfo
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Abstract
The invention relates to a continuous high-repetition-frequency high-voltage pulse source which comprises an FPGA (field programmable gate array) control module, a high-voltage energy storage module, a unilateralization pulse module and a pulse transmission module, wherein the high-voltage energy storage module, the unilateralization pulse module and the pulse transmission module are sequentially connected. The FPGA control module is connected with the unilateralization pulse module, and the unilateralization pulse module comprises a unilateralization energy distribution submodule, an MOSFET (metal-oxide-semiconductor field effect transistor) array and a unilateralization clamping and pulse synthesis submodule which are sequentially connected, wherein the unilateralization energy distribution submodule is connected with the high-voltage energy storage module, the unilateralization clamping and pulse synthesis submodule is connected with the pulse transmission module, and the MOSFET array is connected with the FPGA control module. Compared with the prior art, the continuous high-repetition-frequency high-voltage pulse source pulses orderly in a time division manner by the aid of the MOSFET array and synthesizes pulses to generate a high-repetition-frequency high-voltage pulse and has the advantages of pulse repetition frequency, good electromagnetic isolation and the like.
Description
Technical field
The present invention relates to a kind of pulse power supply, especially relate to a kind of continuous high repetition high-voltage pulsed source.
Background technology
The national defence scientific research field is served in Pulse Power Techniques traditionally, generally is the single operation.Along with raising military, the high-energy physics domain requirement, and Pulse Power Techniques are in the application in medical science, industry, the field such as civilian, make clock must be in the repetition rate operating state to the new demand of certain average power.The research of a new generation's clock has not been the high-power or fast rising edge of pursuing simply single pulse, more pay attention in certain pulse power output situation, have the more clock of high repetition frequency, accuracy, controllability, flexibility, take into account simultaneously the factor such as reliability, volume, cost of clock.At present, the clock technology that has experienced four important breakthroughs is faced with the 5th technological break-through at present, i.e. the breakthrough of high repetition frequency aspect, and its index is developed to hundreds of KHz and even MHz rank by original KHz rank.
Developed country payes attention to the development of this equipment throughout the year and constantly brings forth new ideas.Technical indicator aspect, the repetition rate of equipment present the characteristics that raise and reduce with voltage mostly.Concrete advanced parameter is: burst state, repetition are 2MHz and higher; Continuous state, repetition are 300～500KHz.The overall target product of the future is expensive, such as the product price of German FID company more than 10～150,000 Euros; Common product, at 100KHz and following clock thereof, price is also more than 10,000 dollars such as repetition.What need particularly point out is, because the important application of this series products in defense technology and some Major Strategic engineerings, western developed country is all embargoed China.
At home, high repetition frequency high-voltage pulsed source development ground zero is in the principle prototype experimental stage.Except Shanghai Communications University, its counit receiver spare is made, substantially can't break through simultaneously this comprehensive technical indexes bottleneck of the continuous repetition of 3KV, 100KHz.This is because traditional all solid state semiconductor pulse switch device or operating voltage is very high but frequency is low (such as GTO), or the very high but voltage very low (such as MOSFET) of operating frequency, does not still have all high devices of operating voltage and repetition rate.The repetition of 1MHz also only can realize under the Burst state MOSFET, and continuous N Hz repetition can't be provided.Under the reality, the existence of thermoae limit provides the switch mosfet module of thousands of volt high pressure, its continuous repetition＜100KHz.For this reason, adopt the unidirectional parallel connection of many MOSFET module, time sharing mode, exist and break through thermoae limit, realize the possibility of the Solid state pluser of the continuous repetition rate of MHz.But when the connection in series-parallel of many MOSFET device when satisfying the voltage power demand, as three terminal device, MOSFET needs complicated circuit that triggering signal is provided, and increases equipment cost, has brought difficulty to operation and maintenance.The triggering synchronous problem that relates to for increasing pulse power then is more complicated problem.In addition, the service time of tens of nanoseconds is still longer, uses in the more prevalent situation at ps level short pulse, and this index becomes the obstacle that MOSFET uses in ULTRA-WIDEBAND RADAR, communication and solid-state laser field.The existence of these key issues determines that again our work can not rely on merely MOSFET.
Summary of the invention
Purpose of the present invention is exactly that a kind of pulse repetition frequency, continuous high repetition high-voltage pulsed source that electromagnetic isolation is good are provided in order to overcome the defective that above-mentioned prior art exists.
Purpose of the present invention can be achieved through the following technical solutions:
A kind of continuous high repetition high-voltage pulsed source, comprise the FPGA control module and be connected the high-voltage energy storage module that connects, the unilateralization pulse module, the burst transmissions module, described FPGA control module is connected with the unilateralization pulse module, described unilateralization pulse module comprises the unilateralization energy distribution submodule that connects successively, MOSFET array and unilateralization clamper and pulse synthon module, described unilateralization energy distribution submodule is connected with the high-voltage energy storage module, described unilateralization clamper and pulse synthon module are connected with the burst transmissions module, and described MOSFET array is connected with the FPGA control module;
The high-voltage energy storage module provides high voltage source for the unilateralization pulse module, and by unilateralization energy distribution submodule energy is distributed, FPGA control module control MOSFET array time-sharing sends pulse in an orderly manner, unilateralization clamper and pulse synthon module are exported high repetition high-voltage pulse by the burst transmissions module after clamper and synthetic the processing are carried out in pulse.
Described MOSFET array is for to be formed in parallel by a plurality of switch mosfets, and each switch mosfet is triggered by the timesharing of FPGA control module.
The energy transmission of described unilateralization energy distribution submodule, MOSFET array and unilateralization clamper and pulse synthon intermodule is the unilateralization transmission.
Compared with prior art, the present invention has the following advantages:
1) to carry out timesharing synthetic in order in the switch mosfet of the present invention pulse of sending, and both improved the clock repetition rate, the thermoae limit problem when avoiding simultaneously single switch high repetition frequency;
2) energy can only the unilateralization transmission in the unilateralization pulse module of the present invention, possesses good electromagnetic isolation;
3) clock of the present invention can produce the pulse of high repetition frequency, high precision.
Description of drawings
Fig. 1 is structural representation of the present invention;
Fig. 2 is the structural representation of MOSFET array of the present invention;
Fig. 3 is the synthetic sequential schematic diagram of MOSFET array of the present invention pulse.
Embodiment
The present invention is described in detail below in conjunction with the drawings and specific embodiments.
Embodiment
As shown in Figure 1, a kind of continuous high repetition high-voltage pulsed source, comprise FPGA control module 4 and be connected the high-voltage energy storage module 1 that connects, unilateralization pulse module 2, burst transmissions module 3, described FPGA control module 4 is connected with unilateralization pulse module 2, described unilateralization pulse module 2 comprises the unilateralization energy distribution submodule 21 that connects successively, MOSFET array 22 and unilateralization clamper and pulse synthon module 23, described unilateralization energy distribution submodule 21 is connected with high-voltage energy storage module 1, described unilateralization clamper and pulse synthon module 23 are connected with burst transmissions module 3, and described MOSFET array 22 is connected with FPGA control module 4.The energy transmission of described unilateralization energy distribution submodule, MOSFET array and unilateralization clamper and pulse synthon intermodule is the unilateralization transmission, possesses good electromagnetic isolation.
The continuous high repetition high-voltage pulsed source of present embodiment can have been realized voltage: 8000V (adjustable), continuously repetition rate: 400KHz (pulsewidth is adjustable), load: 50～3K Europe (support capacitive load), peak power: the technical indicator of the continuous high repetition high-voltage pulsed source of the plan industrialization of 1.2 megawatts (Max).
As shown in Figure 2, the MOSFET array is formed in parallel for the switch mosfet 221 by 5 8KV, 80KHz in the present embodiment, and each switch mosfet is triggered by the timesharing of FPGA control module.
The operation principle of the continuous high repetition high-voltage pulsed source of present embodiment is: high-voltage energy storage module 1 provides high voltage source for unilateralization pulse module 2, and by unilateralization energy distribution submodule 21 energy is distributed, pulse is sent in each switch mosfet 221 timesharing in the FPGA control module 4 control MOSFET arrays 22 in an orderly manner, after unilateralization clamper and pulse synthon module 23 are carried out clamper and synthetic the processing with pulse, by the high repetition high-voltage pulse of burst transmissions module 3 outputs, as shown in Figure 3,5 switch mosfet 400KHz pulse sequences that generate in parallel.
The continuous high repetition high-voltage pulsed source of present embodiment can be served the development of the needs of high-energy physics experiment, the development of high power Electrooptic Q, high Repetition Frequency Laser device and the development in high repetition plasma pulse source etc., for the research of the field new technologies such as Military Application, scientific research, commercial Application, biomedicine, environmental protection provides the basis; The successful development of high repetition high-voltage pulsed source also can be broken external embargo simultaneously, reduces the expensive quotation of product, promotes the realization of novel integrated chip process equipment, novel communication antenna, high-efficiency environment friendly technology and product.
Claims (3)
1. continuous high repetition high-voltage pulsed source, it is characterized in that, comprise the FPGA control module and be connected the high-voltage energy storage module that connects, the unilateralization pulse module, the burst transmissions module, described FPGA control module is connected with the unilateralization pulse module, described unilateralization pulse module comprises the unilateralization energy distribution submodule that connects successively, MOSFET array and unilateralization clamper and pulse synthon module, described unilateralization energy distribution submodule is connected with the high-voltage energy storage module, described unilateralization clamper and pulse synthon module are connected with the burst transmissions module, and described MOSFET array is connected with the FPGA control module;
The high-voltage energy storage module provides high voltage source for the unilateralization pulse module, and by unilateralization energy distribution submodule energy is distributed, FPGA control module control MOSFET array time-sharing sends pulse in an orderly manner, unilateralization clamper and pulse synthon module are exported high repetition high-voltage pulse by the burst transmissions module after clamper and synthetic the processing are carried out in pulse.
2. a kind of continuous high repetition high-voltage pulsed source according to claim 1 is characterized in that, described MOSFET array is for to be formed in parallel by a plurality of switch mosfets, and each switch mosfet is triggered by the timesharing of FPGA control module.
3. a kind of continuous high repetition high-voltage pulsed source according to claim 1 is characterized in that the energy transmission of described unilateralization energy distribution submodule, MOSFET array and unilateralization clamper and pulse synthon intermodule is the unilateralization transmission.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105207656A (en) * | 2014-06-09 | 2015-12-30 | 上海紫竹新兴产业技术研究院 | Array structure of high-speed power switch circuit |
| CN106711758A (en) * | 2016-12-22 | 2017-05-24 | 吉林大学 | Pulse laser range finder emitter driving power supply |
| CN106785894A (en) * | 2016-12-22 | 2017-05-31 | 吉林大学 | A kind of digital semiconductor laser pulse driver |
| CN107508487A (en) * | 2016-12-22 | 2017-12-22 | 长春工程学院 | Pulse current source with multiple protective |
| CN112821883A (en) * | 2021-02-04 | 2021-05-18 | 长春工程学院 | Load self-adaptive high-voltage pulse source with multiple negative feedback |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105207656A (en) * | 2014-06-09 | 2015-12-30 | 上海紫竹新兴产业技术研究院 | Array structure of high-speed power switch circuit |
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| CN106785894A (en) * | 2016-12-22 | 2017-05-31 | 吉林大学 | A kind of digital semiconductor laser pulse driver |
| CN107508487A (en) * | 2016-12-22 | 2017-12-22 | 长春工程学院 | Pulse current source with multiple protective |
| CN106785894B (en) * | 2016-12-22 | 2019-05-07 | 吉林大学 | A kind of digital semiconductor laser pulse driver |
| CN106711758B (en) * | 2016-12-22 | 2019-05-07 | 吉林大学 | Pulse laser laser welder transmitter driving power |
| CN112821883A (en) * | 2021-02-04 | 2021-05-18 | 长春工程学院 | Load self-adaptive high-voltage pulse source with multiple negative feedback |
| CN112821883B (en) * | 2021-02-04 | 2023-06-20 | 长春工程学院 | Load self-adaptive high-voltage pulse source with multiple negative feedback |
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| CN102882493B (en) | 2016-05-25 |
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Effective date of registration: 20191127 Address after: 215500 10th floor, building 1, Jiangnan Building, No. 1, Haiyu South Road, Changshu, Suzhou, Jiangsu Province Patentee after: Suzhou kezhonghuayuan Electronic Technology Co., Ltd Address before: 200240 Dongchuan Road, Shanghai, No. 800, No. Patentee before: Shanghai Jiaotong University |
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