CN102882493B - A kind of continuous high repetition high-voltage pulsed source - Google Patents
A kind of continuous high repetition high-voltage pulsed source Download PDFInfo
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- CN102882493B CN102882493B CN201210370092.3A CN201210370092A CN102882493B CN 102882493 B CN102882493 B CN 102882493B CN 201210370092 A CN201210370092 A CN 201210370092A CN 102882493 B CN102882493 B CN 102882493B
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Abstract
The present invention relates to a kind of continuous high repetition high-voltage pulsed source, comprise FPGA control module and the high-voltage energy storage module being connected successively, unilateralization pulse module, burst transmissions module, described FPGA control module is connected with unilateralization pulse module, described unilateralization pulse module comprises the unilateralization energy distribution submodule connecting successively, MOSFET array and unilateralization clamper and pulse synthon module, described unilateralization energy distribution submodule is connected with high-voltage energy storage module, described unilateralization clamper and pulse synthon module are connected with burst transmissions module, described MOSFET array is connected with FPGA control module. compared with prior art, the present invention sends pulse in an orderly manner by MOSFET array time-sharing, and pulse is synthesized, and generates high repetition high-voltage pulse, has the advantages such as pulse recurrence frequency, electromagnetic isolation be good.
Description
Technical field
The present invention relates to a kind of pulse power supply, especially relate to a kind of continuous high repetition high-voltage pulsed source.
Background technology
National defence scientific research field is served in Pulse Power Techniques traditionally, is generally single operation. Along with military, high energyThe raising of physical field demand, and Pulse Power Techniques are in the application in medical science, industry, the field such as civilian, to oneThe new demand of determining mean power makes the clock must be in repetition rate duty. The research of a new generation's clockNot the high-power or fast rising edge of pursuing simply single pulse, more pay attention in certain pulse power output situation toolHave the more clock of high repetition frequency, accuracy, controllability, flexibility, take into account simultaneously clock reliability,The factor such as volume, cost. At present, the clock technology that has experienced four important breakthroughs is faced with skill at present the 5th timeArt breaks through, i.e. the breakthrough of high repetition frequency aspect, its index by original KHz rank to hundreds of KHz and evenThe development of MHz rank.
Developed country payes attention to the development of this equipment throughout the year and constantly brings forth new ideas. Technical indicator aspect, the repetition rate of equipmentMostly present with the voltage feature reducing that raises. Concrete advanced parameter is: burst state, repetition is 2MHzAnd higher; Continuous state, repetition is 300～500KHz. Overall target product of the future is expensive, as GermanyThe product price of FID company is more than 10～150,000 Euros; Common product, if repetition is at 100KHz and followingClock, price is also more than 10,000 dollars. Need particularly point out, due to this series products defense technology withAnd important application in some Major Strategic engineerings, western developed country is all embargoed China.
At home, high repetition frequency high-voltage pulsed source development ground zero, in principle prototype experimental stage. Except ShanghaiOutside university of communications, its counit receiver part is made, substantially cannot break through simultaneously the continuous repetition of 3KV, 100KHz thisOne comprehensive technical indexes bottleneck. This is because of traditional all solid state semiconductor pulse switch device or operating voltage is very highBut frequency low (as GTO), or the very high but voltage very low (as MOSFET) of operating frequency does not still haveAll high devices of operating voltage and repetition rate. The repetition of 1MHz is for MOSFET, also only at BurstUnder state, can realize, continuous N Hz repetition cannot be provided. Under reality, the existence of thermoae limit, provides severalThe switch mosfet module of kilovolt high pressure, its continuous repetition < 100KHz. For this reason, adopt many MOSFET mouldThe unidirectional parallel connection of piece, time sharing mode, exist and break through thermoae limit, realizes all solid state of the continuous repetition rate of MHzThe possibility of clock. But when the connection in series-parallel of many MOSFET device is when meeting voltage power demand, as three endsDevice, MOSFET needs complicated circuit that triggering signal is provided, and increases equipment cost, to operation and maintenance bandCarry out difficulty. The triggering synchronous problem relating to for increasing pulse power is more complicated problem. In addition,The service time of tens of nanoseconds is still longer, applies more prevalent in the situation that at ps level short pulse, and this index becomesMOSFET is at the obstacle of ULTRA-WIDEBAND RADAR, communication and the application of solid-state laser field. Depositing of these key issuesCan not rely on merely MOSFET in the work that determines again us.
Summary of the invention
Object of the present invention is exactly to provide a kind of pulse to repeat frequently in order to overcome the defect that above-mentioned prior art existsRate, the continuous high repetition high-voltage pulsed source that electromagnetic isolation is good.
Object of the present invention can be achieved through the following technical solutions:
A kind of continuous high repetition high-voltage pulsed source, comprises FPGA control module and the high-voltage energy storage mould being connected successivelyPiece, unilateralization pulse module, burst transmissions module, described FPGA control module and unilateralization pulse moduleConnect, described unilateralization pulse module comprises the unilateralization energy distribution submodule, the MOSFET that connect successivelyArray and unilateralization clamper and pulse synthon module, described unilateralization energy distribution submodule and high-voltage energy storage mouldPiece connects, and described unilateralization clamper and pulse synthon module are connected with burst transmissions module, describedMOSFET array is connected with FPGA control module;
High-voltage energy storage module provides high voltage source for unilateralization pulse module, and by unilateralization energy distribution submoduleEnergy is distributed, and FPGA control module control MOSFET array time-sharing sends pulse in an orderly manner, unidirectionalChange clamper and pulse synthon module pulse is carried out after clamper and synthetic processing, high by the output of burst transmissions moduleRepetition high-voltage pulse.
Described MOSFET array is for to be formed in parallel by multiple switch mosfets, each switch mosfet byThe timesharing of FPGA control module triggers.
Submodule is synthesized in described unilateralization energy distribution submodule, MOSFET array and unilateralization clamper and pulseThe energy transmission of interblock is unilateralization transmission.
Compared with prior art, the present invention has the following advantages:
1) it is synthetic in order that timesharing is carried out in the pulse that switch mosfet of the present invention sends, and both improved clock and repeated frequentlyRate, the hot Limits properties while simultaneously avoiding single switch high repetition frequency;
2) in unilateralization pulse module of the present invention, energy can only unilateralization transmission, possesses good electromagnetic isolation;
3) clock of the present invention can produce the pulse of high repetition frequency, high precision.
Brief description of the drawings
Fig. 1 is structural representation of the present invention;
Fig. 2 is the structural representation of MOSFET array of the present invention;
Fig. 3 is the synthetic sequential schematic diagram of MOSFET array of the present invention pulse.
Detailed description of the invention
Below in conjunction with the drawings and specific embodiments, the present invention is described in detail.
Embodiment
As shown in Figure 1, a kind of continuous high repetition high-voltage pulsed source, comprises FPGA control module 4 and connects successivelyThe high-voltage energy storage module 1, unilateralization pulse module 2, the burst transmissions module 3 that connect, described FPGA controls mouldPiece 4 is connected with unilateralization pulse module 2, and described unilateralization pulse module 2 comprises the unilateralization energy connecting successivelyAmount distribution sub module 21, MOSFET array 22 and unilateralization clamper and pulse synthon module 23, describedUnilateralization energy distribution submodule 21 is connected with high-voltage energy storage module 1, and described unilateralization clamper and pulse are syntheticSubmodule 23 is connected with burst transmissions module 3, described MOSFET array 22 and FPGA control module 4Connect. Described unilateralization energy distribution submodule, MOSFET array and unilateralization clamper and pulse synthonThe energy transmission of intermodule is unilateralization transmission, possesses good electromagnetic isolation.
The continuous high repetition high-voltage pulsed source of the present embodiment can have been realized voltage: 8000V (adjustable), repeat continuouslyFrequency: 400KHz (pulsewidth is adjustable), load: 50～3K Europe (support capacitive load), peak power: 1.2 millionThe technical indicator of the continuous high repetition high-voltage pulsed source of the plan industrialization of watt (Max).
As shown in Figure 2, in the present embodiment, MOSFET array is the MOSFET by 5 8KV, 80KHzSwitch 221 is formed in parallel, and each switch mosfet is triggered by the timesharing of FPGA control module.
The operation principle of the continuous high repetition high-voltage pulsed source of the present embodiment is: high-voltage energy storage module 1 is unilateralization pulseModule 2 provides high voltage source, and by unilateralization energy distribution submodule 21, energy is distributed to FPGAPulse is sent in each switch mosfet 221 timesharing that control module 4 is controlled in MOSFET array 22 in an orderly manner,Unilateralization clamper and pulse synthon module 23 carry out pulse after clamper and synthetic processing, to pass through pulse transmission modePiece 3 is exported high repetition high-voltage pulse, as shown in Figure 3, and 5 switch mosfet 400KHz arteries and veins that generate in parallelRush sequential.
The continuous high repetition high-voltage pulsed source of the present embodiment can be served needs, the high power electric light of high-energy physics experimentThe development in the development of Q-switch laser instrument, the development of high Repetition Frequency Laser device and high repetition plasma pulse source etc.,For the research of the field new technologies such as Military Application, scientific research, commercial Application, biomedicine, environmental protection providesBasis; The successful development of high repetition high-voltage pulsed source, also can break external embargo simultaneously, reduces the expensive quotation of product,Promote the realization of novel integrated chip process equipment, novel communication antenna, high-efficiency environment friendly technology and product.
Claims (2)
1. a continuous high repetition high-voltage pulsed source, is characterized in that, comprises FPGA control module and connects successivelyThe high-voltage energy storage module, unilateralization pulse module, the burst transmissions module that connect, described FPGA control module withUnilateralization pulse module connects, and described unilateralization pulse module comprises the unilateralization energy distribution submodule connecting successivelyPiece, MOSFET array and unilateralization clamper and pulse synthon module, described unilateralization energy distribution submodulePiece is connected with high-voltage energy storage module, and described unilateralization clamper and pulse synthon module and burst transmissions module connectConnect, described MOSFET array is connected with FPGA control module;
High-voltage energy storage module provides high voltage source for unilateralization pulse module, and by unilateralization energy distribution submoduleEnergy is distributed, and FPGA control module control MOSFET array time-sharing sends pulse in an orderly manner, unidirectionalChange clamper and pulse synthon module pulse is carried out after clamper and synthetic processing, high by the output of burst transmissions moduleRepetition high-voltage pulse;
Described MOSFET array is for to be formed in parallel by multiple switch mosfets, each switch mosfet byThe timesharing of FPGA control module triggers, and has both improved clock repetition rate, while avoiding single switch high repetition frequency simultaneouslyHot Limits properties.
2. the continuous high repetition high-voltage pulsed source of one according to claim 1, is characterized in that, describedThe energy of unilateralization energy distribution submodule, MOSFET array and unilateralization clamper and pulse synthon intermoduleTransmit as unilateralization transmission.
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| CN105207656A (en) * | 2014-06-09 | 2015-12-30 | 上海紫竹新兴产业技术研究院 | Array structure of high-speed power switch circuit |
| CN107508487A (en) * | 2016-12-22 | 2017-12-22 | 长春工程学院 | Pulse current source with multiple protective |
| CN106711758B (en) * | 2016-12-22 | 2019-05-07 | 吉林大学 | Pulse laser laser welder transmitter driving power |
| CN106785894B (en) * | 2016-12-22 | 2019-05-07 | 吉林大学 | A kind of digital semiconductor laser pulse driver |
| CN112821883B (en) * | 2021-02-04 | 2023-06-20 | 长春工程学院 | Load self-adaptive high-voltage pulse source with multiple negative feedback |
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| US6066901A (en) * | 1998-09-17 | 2000-05-23 | First Point Scientific, Inc. | Modulator for generating high voltage pulses |
| CN101630952A (en) * | 2008-07-15 | 2010-01-20 | 中国科学院西安光学精密机械研究所 | Method for realizing ultra wide band electric pulse in high repetition frequency |
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| CN1055093A (en) * | 1990-03-20 | 1991-10-02 | 中国科学院上海光学精密机械研究所 | Synthetic pulse power supply with high repeation rate |
| US7989987B2 (en) * | 2005-06-08 | 2011-08-02 | Mcdonald Kenneth Fox | Photon initiated marxed modulators |
| CN102545846B (en) * | 2011-12-31 | 2015-11-25 | 同方威视技术股份有限公司 | The equipment exported for control impuls and method |
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| US6066901A (en) * | 1998-09-17 | 2000-05-23 | First Point Scientific, Inc. | Modulator for generating high voltage pulses |
| CN101630952A (en) * | 2008-07-15 | 2010-01-20 | 中国科学院西安光学精密机械研究所 | Method for realizing ultra wide band electric pulse in high repetition frequency |
| CN101795127A (en) * | 2010-02-04 | 2010-08-04 | 西安理工大学 | High-voltage square-wave pulse generator and method for generating high-voltage square-wave pulse |
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