CN103954936A - Radar transmitting-receiving switch provided with microwave high-power amplitude limiter - Google Patents
Radar transmitting-receiving switch provided with microwave high-power amplitude limiter Download PDFInfo
- Publication number
- CN103954936A CN103954936A CN201410148339.6A CN201410148339A CN103954936A CN 103954936 A CN103954936 A CN 103954936A CN 201410148339 A CN201410148339 A CN 201410148339A CN 103954936 A CN103954936 A CN 103954936A
- Authority
- CN
- China
- Prior art keywords
- ferrite circulator
- microwave high
- high power
- circulator
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
- G01S7/03—Details of HF subsystems specially adapted therefor, e.g. common to transmitter and receiver
- G01S7/034—Duplexers
Landscapes
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Tone Control, Compression And Expansion, Limiting Amplitude (AREA)
Abstract
The invention discloses a radar transmitting-receiving switch provided with a microwave high-power amplitude limiter. The radar transmitting-receiving switch comprises a transmitter, a first ferrite circulator, a second ferrite circulator, a receiver and a carrier diode with long service life, wherein the transmitter is used for transmitting radio-frequency signals; the first end of the first ferrite circulator is connected with the transmitter, and the second end of the first ferrite circulator is connected with a load device; the first end of the second ferrite circulator is connected with the third end of the first ferrite circulator, and the second end of the second ferrite circulator is connected with an antenna; the receiver is connected with the third end of the second ferrite circulator and used for receiving echo signals received by the antenna; the carrier diode with the long service life is arranged between the third end of the second ferrite circulator and the receiver. According to the radar transmitting-receiving switch, through the radio frequency micro-electronic and semiconductor theory, the microcosmic mechanism that an amplitude limiting diode is burned out due to RF power overload is analyzed, and motion features of carriers in the diode in alternating electromagnetism are analyzed; the microwave high-power amplitude limiter is designed through the carrier diode with the long service life, so that the power capacity of the amplitude limiter is increased by an order of magnitude.
Description
Technical field
The present invention relates to radar transmit-receive switching technique field, relate in particular to a kind of radar duplexer with microwave high power limiter.
Background technology
Limiter is the microwave passive semiconductor control device under a certain particular level by output power limit; protective device as receiver front end equipment in radar duplexer; when input signal is rationed the power supply at ordinary times lower than amplitude gate, limiter will be let pass with low insertion loss, little standing wave coefficient state.
Domestic thin I layer PIN diode and the varactor diode fo microwave harmonic generator design limiter of generally adopting of prior art, the ability of its microwave power of processing is relevant to dissipated power, voltage breakdown, the radiating condition of diode itself; In addition also with input RF(Radio Frequency, radio frequency) frequency, pulse width and the dutycycle of signal be relevant.How to choose diode is the key of design high power limiter, in analysis and design in the past, the normal movement characteristic of charge carrier in microwave field of ignoring, and in fact the equivalent electrical circuit of the behavioural characteristic of diode in microwave field and DC parameter thereof the foundation as device quantitative test will can not be represented completely, naturally also just can not get definite result, cause existing limiter power capacity many in watt level, cannot improve the ability of processing microwave power.
Summary of the invention
The present invention proposes a kind of radar duplexer with microwave high power limiter, to improve the power capacity of limiter.
A kind of radar duplexer with microwave high power limiter that the present invention proposes, comprising: transmitter, the first ferrite circulator, load device, the second ferrite circulator, antenna, receiver, microwave high power limiter; Transmitter is used for sending radiofrequency signal; The first end of the first ferrite circulator is connected with transmitter, the second end of the first ferrite circulator is connected with load device, the 3rd end of the first ferrite circulator is connected with the first end of the second ferrite circulator, the second end of the second ferrite circulator is connected with antenna, and receiver is connected the echoed signal receiving for receiving antenna with the 3rd end of the second ferrite circulator; Microwave high power limiter consists of long-life charge carrier diode, and microwave high power limiter is arranged between the 3rd end and receiver of the second ferrite circulator;
Under transmitting duty, transmitter sends radiofrequency signal, radiofrequency signal enters the first iron oxygen circulator and exports from the 3rd end of the first iron oxygen circulator from the first end of the first iron oxygen circulator, then from the first end of the second ferrite circulator, input the second ferrite circulator and export from the second end of the second ferrite circulator, through waveguide, arriving antenna transmission and go out; Receiving under duty, antenna reception echoed signal, inputs and exports from the 3rd end of the second ferrite circulator from the second end of the second ferrite circulator through waveguide, then enters receiver.
In the present invention, by by RF microelectronic and Semiconductive Theory, analyze the microscopic mechanism that limiter diode burns because of RF power overload, and the motion feature of charge carrier in alternating electromagnetism in diode; With long-life charge carrier diode design high power amplitude limiter, make the power capacity of limiter improve an order of magnitude.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation with the radar duplexer of microwave high power limiter in the embodiment of the present invention;
Fig. 2 is a kind of long-life charge carrier diode match circuit figure in the embodiment of the present invention.
Embodiment
As shown in Figure 1, Fig. 1 is a kind of structural representation with the radar duplexer of microwave high power limiter in the embodiment of the present invention.
With reference to Fig. 1, the embodiment of the present invention has proposed a kind of radar duplexer with microwave high power limiter, comprise: transmitter 10, the first ferrite circulator 20, load device 30, the second ferrite circulator 40, antenna 50, receiver 60, microwave high power limiter 70, wherein:
Transmitter 10 is for sending radiofrequency signal; The first end of the first ferrite circulator 20 is connected with transmitter 10, and the second end of the first ferrite circulator 20 is connected with load device 30; The first end of the second ferrite circulator 40 is connected with the 3rd end of the first ferrite circulator 20, and the second end of the second ferrite circulator 40 is connected with antenna 50; Receiver 60 is connected the echoed signal receiving for receiving antenna 50 with the 3rd end of the second ferrite circulator 40; Microwave high power limiter 70, consists of long-life charge carrier diode, is arranged on the 3rd end of the second ferrite circulator 40 between receiver 60, and long-life charge carrier diode 70 is snap-off diode or abrupt-junction diobe.
Its course of work is as follows in embodiments of the present invention: transmitter 10 sends radiofrequency signal, from the first end of the first iron oxygen circulator 20, enter the first iron oxygen circulator 20, the 3rd end output from the first iron oxygen circulator 20, from the first end of the second ferrite circulator 40, input the second ferrite circulator 40, the second end output from the second ferrite circulator 40, arrives antenna 50 through waveguide and launches; Antenna 50 receives echoed signal, the second end input through waveguide from the second ferrite circulator 40, and the 3rd end output from the second ferrite circulator 40, enters receiver 60.
For example, output power of transmitter Pout=100kW, the isolation D=20dB of the first ferrite circulator and the second ferrite circulator, antenna standing-wave ratio VSWR=2.0, the power that now leaks into receiving branch is 1.1kW; Under the driving of this leakage power, long-life charge carrier diode is conducting duty, and the leakage power short circuit face that device sets up that is limited reflects, and reflected signal is absorbed by load device via the first ferrite circulator and the second ferrite circulator; Long-life charge carrier diode provides 50dB isolation, leak to the signal of receiving branch be 11mW, be enough to protect receiver; During receiving target echoed signal, long-life charge carrier diode is in open-circuit condition, and signal passes through smoothly, sends into receiver.
In the embodiment of the present invention, after having analyzed the microscopic mechanism that varactor and PIN varistor limiter lost efficacy because of RF power overload, adopt long-life charge carrier diode design limiter.
Although the voltage breakdown of long-life charge carrier diode is very low, dissipated power is also not bery high, can process very high RF power, and its first principles analysis is as follows:
Under the driving of the high-power positive half cycle of RF, to the two long-life charge carriers that inject of barrier region forward, not only can not be compound in barrier region, but pass through barrier region, continue the diffusion to the other side, form the few son in this district.The ultimate value that has occurred injected carrier at microwave signal forward antinode, now, few son is collected at PN junction both sides in a large number, and its concentration decays by exponential law with the distance of leaving barrier region; In the storage of the both sides of PN junction, have a large amount of charges of different polarity, the storage electric charge of barrier region is:
θ=Ι
mT
In formula, Ι
m-RF electric current abdomen value
T-carrier lifetime
These inject and the electric charge that stores is retracted by the negative sense field of RF negative half period again at forward, form stronger negative current.
For charge carrier waiting time, be several diodes to tens nanoseconds, can in the whole RF negative half period period, maintain all the time a very large inverse current, make diode still in low-impedance conducting state, can not return to cut-off state, the power capacity of this limiter is not subject to the restriction of diode breakdown voltage, so there will not be the thermal breakdown failure phenomenon of varactor or PIN diode limiter, thereby greatly improved the power capacity of limiter.In the positive half cycle of RF and negative half period Finite Amplitude function all, and power varactor and PIN diode there will be exhausting of charge carrier at the negative half period of RF in barrier region in the period, it is reverse blocking state, both be by thermal breakdown, not lost efficacy, also can only play amplitude limit effect at the positive half cycle of RF, so with needing two contrary docking of diode polarity just can have perfect Limiting effect.
The comparison of long-life charge carrier diode limiter power capacity and like product, listed L-band below, pulsewidth 450 μ s, the modulating pulse duty of dutycycle 1/50, single tube is parallel on 50 Ω microstrip lines, without several limiter diode microwave power capacity limitation measured results of other radiating conditions.
Table 1 limiter diode low-frequency parameter nominal value and micro-receipts power capacity ultimate value
As can be seen from Table 1, the microwave power capacity of long-life charge carrier diode limiter is much bigger compared with varactor and PIN diode limiter, although voltage breakdown is very low, do not hinder it to process powerful ability, active is above-mentioned mechanism.Its power capacity only depends on the dissipated power of diode itself, even and other limiter diodes have higher dissipated power, higher voltage breakdown can not be born larger microwave power.
Optimal way one: long-life charge carrier diode limiter is parallel on 50 Ω microstrip lines, in the period of receiving target echo jjXX, long jj longevity XX life charge carrier diode limiter is approximately a capacitive reactance and is connected to microstrip line, its value is diode junction jX capacitor C jjjB, X produces discontinuous at this point, generate larger voltage standing wave ratio (VSWR).
As shown in Figure 2, jjBB should do match circuit design herein, and matching network normalization transition matrix is:
If matching network is lossless network, have:
| S
21|=1, therefore | S
11|=0
The matching condition of network is:
B＝wC
jZ
0
To known diode junction capacitance Cj, can try to achieve the inductance value L in match circuit, with the high impedance line simulation lumped parameter inductance of one section of distribution parameter.
Optimal way two: in the period of radar emission electromagnetic pulse, limiter tube is in passive conducting state, the lead-in inductance encapsulating due to limiter tube declines isolation, can adopt the external electric capacity and its formation series resonant tank that are connected in series mutually with lead-in inductance, the short circuit face of after resonance, leakage signal being set up, on the central task frequency of L-band, can provide the isolation that is greater than 35dB, after two-stage amplitude limit, leak to receiver front end power and be less than 10mW.
Optimal way three: because carrier lifetime is long, must cause long-life charge carrier diode limiter from conducting, to reset to the time lag of cut-off opening, be that the release time of charge carrier diode limiter long-life is slow, thereby affect the near-space blind area increasing of radar.
Can be expressed as the release time of long-life charge carrier diode limiter:
tS=Tln（l+Ιf/ΙR）
In formula, T-carrier lifetime
Ι f-transmitting electromagnetic pulse time Nei Xiang barrier diode district Injection Current mean value
After Ι R-transponder pulse finishes, charge carrier is done drift motion and the inverse current that produces under built effect
In order to obtain an appropriate diode recovery time, can change the sub-life-span of damming by controlling the tube core doping content of long-life charge carrier diode and distributing, make it neither occur thermal breakdown phenomenon, maintain again enough short release time.Meanwhile, can after transponder pulse, to long-life charge carrier diode limiter, apply an appropriate negative bias (for example, negative bias values is 1.2 volts to 1.5 volts), in order to strengthen inverse current, will greatly shorten the release time of limiter.
The above; it is only preferably embodiment of the present invention; but protection scope of the present invention is not limited to this; anyly be familiar with those skilled in the art in the technical scope that the present invention discloses; according to technical scheme of the present invention and inventive concept thereof, be equal to replacement or changed, within all should being encompassed in protection scope of the present invention.
Claims (8)
1. a radar duplexer with microwave high power limiter, is characterized in that, comprising: transmitter, the first ferrite circulator, load device, the second ferrite circulator, antenna, receiver, microwave high power limiter; Transmitter is used for sending radiofrequency signal; The first end of the first ferrite circulator is connected with transmitter, the second end of the first ferrite circulator is connected with load device, the 3rd end of the first ferrite circulator is connected with the first end of the second ferrite circulator, the second end of the second ferrite circulator is connected with antenna, and receiver is connected the echoed signal receiving for receiving antenna with the 3rd end of the second ferrite circulator; Microwave high power limiter consists of long-life charge carrier diode, and microwave high power limiter is arranged between the 3rd end and receiver of the second ferrite circulator;
Under transmitting duty, transmitter sends radiofrequency signal, radiofrequency signal enters the first iron oxygen circulator and exports from the 3rd end of the first iron oxygen circulator from the first end of the first iron oxygen circulator, then from the first end of the second ferrite circulator, input the second ferrite circulator and export from the second end of the second ferrite circulator, through waveguide, arriving antenna transmission and go out; Receiving under duty, antenna reception echoed signal, inputs and exports from the 3rd end of the second ferrite circulator from the second end of the second ferrite circulator through waveguide, then enters receiver.
2. the radar duplexer with microwave high power limiter according to claim 1, is characterized in that, described long-life charge carrier diode is snap-off diode or abrupt-junction diobe.
3. the radar duplexer with microwave high power limiter according to claim 1 and 2, is characterized in that, described long-life charge carrier diodes in parallel is on microstrip line.
4. the radar duplexer with microwave high power limiter according to claim 3, is characterized in that, tries to achieve the inductance value of match circuit in described microwave high power limiter according to described long-life charge carrier diode junction capacitance Cj.
5. the radar duplexer with microwave high power limiter according to claim 1 and 2, is characterized in that, lead-in inductance and the external capacitance series of limiter encapsulation form series resonant tank.
6. the radar duplexer with microwave high power limiter according to claim 1 and 2, is characterized in that, by controlling the tube core doping content of described long-life charge carrier diode and distributing, changes the sub-life-span of damming.
7. the radar duplexer with microwave high power limiter according to claim 1 and 2, is characterized in that, at described long-life charge carrier diode two ends, applies a negative bias in order to strengthen inverse current.
8. the radar duplexer with microwave high power limiter according to claim 7, is characterized in that, described negative bias values is 1.2 volts to 1.5 volts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410148339.6A CN103954936A (en) | 2014-04-14 | 2014-04-14 | Radar transmitting-receiving switch provided with microwave high-power amplitude limiter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410148339.6A CN103954936A (en) | 2014-04-14 | 2014-04-14 | Radar transmitting-receiving switch provided with microwave high-power amplitude limiter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103954936A true CN103954936A (en) | 2014-07-30 |
Family
ID=51332233
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410148339.6A Pending CN103954936A (en) | 2014-04-14 | 2014-04-14 | Radar transmitting-receiving switch provided with microwave high-power amplitude limiter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103954936A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112670688A (en) * | 2020-11-19 | 2021-04-16 | 北京无线电测量研究所 | Annular isolation assembly |
| CN113394527A (en) * | 2021-06-22 | 2021-09-14 | 湖南电磁场科技有限公司 | Single-layer clip type waveguide amplitude limiting structure |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1492606A (en) * | 2003-09-28 | 2004-04-28 | 中兴通讯股份有限公司 | High power linear transmitting-receiving switch circuit |
| US20050093734A1 (en) * | 2002-09-20 | 2005-05-05 | Alford James L. | Simultaneous dual polarization radar system |
| CN101938259A (en) * | 2010-08-16 | 2011-01-05 | 中国电子科技集团公司第五十五研究所 | Gallium arsenide (GaAs) PIN tube limiter monolithic circuit with microwave high power and low clipping level |
| CN202393905U (en) * | 2011-11-29 | 2012-08-22 | 南京鑫轩电子系统工程有限公司 | T/R (Transmission/Reception) assembly system |
-
2014
- 2014-04-14 CN CN201410148339.6A patent/CN103954936A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050093734A1 (en) * | 2002-09-20 | 2005-05-05 | Alford James L. | Simultaneous dual polarization radar system |
| CN1492606A (en) * | 2003-09-28 | 2004-04-28 | 中兴通讯股份有限公司 | High power linear transmitting-receiving switch circuit |
| CN101938259A (en) * | 2010-08-16 | 2011-01-05 | 中国电子科技集团公司第五十五研究所 | Gallium arsenide (GaAs) PIN tube limiter monolithic circuit with microwave high power and low clipping level |
| CN202393905U (en) * | 2011-11-29 | 2012-08-22 | 南京鑫轩电子系统工程有限公司 | T/R (Transmission/Reception) assembly system |
Non-Patent Citations (2)
| Title |
|---|
| 刘会东等: "毫米波超宽带大功率单片单刀双掷开关", 《半导体集成电路》 * |
| 温为佑: "微波大功率限幅器", 《现代雷达》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112670688A (en) * | 2020-11-19 | 2021-04-16 | 北京无线电测量研究所 | Annular isolation assembly |
| CN112670688B (en) * | 2020-11-19 | 2022-04-19 | 北京无线电测量研究所 | Annular isolation assembly |
| CN113394527A (en) * | 2021-06-22 | 2021-09-14 | 湖南电磁场科技有限公司 | Single-layer clip type waveguide amplitude limiting structure |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Mansson et al. | Vulnerability of European rail traffic management system to radiated intentional EMI | |
| Waterhouse et al. | Integrated antenna/electro-optic modulator for RF photonic front-ends | |
| CN112290228B (en) | Lightning protection method of line-circular polarization reconfigurable antenna | |
| CN103954936A (en) | Radar transmitting-receiving switch provided with microwave high-power amplitude limiter | |
| CN106998217B (en) | A high-power capacity microwave transmitting and receiving device and method | |
| Bondarenko et al. | Microwave switch based on a combined coaxial-waveguide tee for a cavity pulse shaper | |
| Wu et al. | An ultrabroadband energy selective surface with nonreciprocal performance for HIRF protection | |
| CN103873021B (en) | Radio frequency limiter protection circuit | |
| Pinsker | Development of impedance matching technologies for ICRF antenna arrays | |
| Kilic et al. | Highly efficient dual‐band GaN power amplifier utilising pin diode‐based tunable harmonic load matching | |
| Custer et al. | Recent advances in kW-level pulsed GaN transistors with very high efficiency | |
| Sayadian et al. | Generation of high-power broad-band microwave pulses by picosecond optoelectronic technique | |
| Miligy et al. | Investigation and design of microwave receiver protector for meteorological radar applications | |
| CN110313245B (en) | A kind of meter wave band T/R switch of PIN-based diode | |
| CN102780475A (en) | Radio frequency transceiver switching circuit | |
| Zarifi et al. | Impedance matching network for ground eliminated open‐ended resonant coil structure in distributed wireless power transmission systems | |
| CN212343741U (en) | Absorption type amplitude limiter | |
| KR101690734B1 (en) | waveguide Duplexer Receiver Protector for X-band | |
| Stukach et al. | 9 GHz power amplifier-transmitter on Gunn diode for measurement-while-drilling system | |
| Gumber et al. | Nonlinear negative resistance-based harmonic backscatter | |
| CN202918263U (en) | Solid state modulator | |
| Xiao et al. | Design of a Self-Switching Rectifier Circuit for Microwave Power Transmission | |
| CN103001619A (en) | Solid-state modulator | |
| Du et al. | Compact and scalable active-integrated antenna system with both oscillation and amplification characteristics for high-power applications | |
| Shen et al. | A microwave limiter with non‐reciprocal limiting threshold |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140730 |
|
| RJ01 | Rejection of invention patent application after publication |