CN102867745A - Etching method and system for improving uniformity of critical dimension of pattern in wafer - Google Patents
Etching method and system for improving uniformity of critical dimension of pattern in wafer Download PDFInfo
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- CN102867745A CN102867745A CN2012103692490A CN201210369249A CN102867745A CN 102867745 A CN102867745 A CN 102867745A CN 2012103692490 A CN2012103692490 A CN 2012103692490A CN 201210369249 A CN201210369249 A CN 201210369249A CN 102867745 A CN102867745 A CN 102867745A
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- antireflective coating
- bottom antireflective
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Abstract
The invention discloses an etching method for improving the uniformity of the critical dimension of a pattern in a wafer. The etching method comprises the following steps of: etching a bottom anti-reflection coating which is not covered by a photoresist pattern by first etching gas, stopping etching when the first etching gas is in contact with a substrate, continuously etching the residual bottom anti-reflection coating which is not covered by the photoresist pattern by second etching gas, and simultaneously performing isotropical lateral reaction on the photoresist pattern by the second etching gas till the bottom anti-reflection coating which is not covered by the photoresist pattern is completely etched. The invention further provides an etching system for improving the uniformity of the critical dimension of the pattern in the wafer. According to the etching method and the etching system, disclosed by the invention, the uniformity of the critical dimension of the pattern in the exposure area of the wafer can be improved, a new mask can be prevented from being offline, the payment of high cost can be further avoided, and the process cycle time can be saved.
Description
Technical field
The present invention relates to the manufacture of semiconductor technical field, relate in particular to a kind of engraving method and system that improves the pattern critical dimension uniformity in the wafer.
Background technology
In the little live width manufacture of semiconductor less than 0.18um, the coarse photolithographic exposure pattern that causes for fear of standing wave effect, bottom antireflective coating (Bottom Anti-Reflect Coating, BARC) is widely used in manufacture of semiconductor and eliminates standing wave effect.But the interior height drop effect that exists of wafer face, bottom antireflective coating is inhomogeneous in the differing heights area thickness, and the critical dimension after causing exposing interior critical dimension (Critical Dimension, CD) the difference change of rear pattern greatly and then causing etching differs greatly.
At photoresist (Photo Resist, PR) and in the coating procedure of bottom antireflective coating, owing to there being height drop effect in the wafer face of charging, photoresist and bottom antireflective coating thickness apply uneven in the same exposure area, this can cause in this exposure area, and critical dimension changes along with the change of substrate height behind the pattern exposure, and then can affect after the etching critical dimension uniformity of pattern in this exposure area.Take 0.13umFlash CG layer Cell district pattern as example, as shown in Figure 1, the critical dimension of the third edge pattern of this exposure area is wider.
At present for this kind situation, can be according to the trend of cd variations, the pattern of revising optical approximate correction (Optical Proximity Correction, OPC) compensates the critical dimension of pattern in this exposure area, guarantees the uniformity of the critical dimension in this exposure area after the etching.
When prior art solves the problem that the pattern critical dimension variation is larger in the exposing wafer zone, need to revise OPC pattern and the new mask plate that rolls off the production line, also need to pay high expense, and consume the longer process period time.
Summary of the invention
The object of the invention is to propose a kind of engraving method and system that improves the pattern critical dimension uniformity in the wafer, can improve the uniformity of pattern critical dimension in the exposing wafer zone.
For reaching this purpose, the present invention by the following technical solutions:
A kind of engraving method that improves the pattern critical dimension uniformity in the wafer, the method comprises:
One substrate is provided, on described substrate, forms a bottom antireflective coating,
On described bottom antireflective coating, form a photoetching agent pattern;
With the first etching gas the bottom antireflective coating that is not covered by described photoetching agent pattern is carried out etching, until described the first etching gas touches described substrate;
With the bottom antireflective coating continuation etching that not by photoetching agent pattern covered of the second etching gas to remnants, isotropic side direction reaction occurs to described photoetching agent pattern in described the second etching gas simultaneously, until the described all etchings of bottom antireflective coating quilt that do not covered by photoetching agent pattern.
Preferably, described the first etching gas comprises full replacement fluorocarbon gas.
Preferably, described the second etching gas comprises that full replacement fluorocarbon gas and part replace fluorocarbon gas.
Preferably, described full replacement fluorocarbon gas comprises CF
4Perhaps C
2F
6Perhaps C
3F
8
Preferably, described part replaces fluorocarbon gas and comprises CHF
3Perhaps CH
2F
2Perhaps CH
3F.
Preferably, described the second etching gas to the etch-rate of bottom antireflective coating greater than the etch-rate to photoresist, to the etch-rate of photoresist greater than the etch-rate to substrate.
Preferably, described backing material is polysilicon.
A kind of etch system that improves the pattern critical dimension uniformity in the wafer comprises:
One Room, this chamber can hold a substrate, forms a bottom antireflective coating on the described substrate, forms a photoetching agent pattern on the described bottom antireflective coating;
One gas input mechanism, this gas input mechanism connects the first etch gas source and the second etch gas source; Described the first etching gas comprises full replacement fluorocarbon gas, and described the second etching gas comprises that full replacement fluorocarbon gas and part replace fluorocarbon gas;
Be arranged at least one electrode in the described chamber; And
One radio freqnency generator, be electrically connected with described at least one electrode, be used for described the first etching gas or the second etching gas are formed plasma, the bottom antireflective coating that is not covered by described photoetching agent pattern is carried out etching, isotropic side direction reaction occurs to described photoetching agent pattern in described the second etching gas, until the described all etchings of bottom antireflective coating quilt that do not covered by photoetching agent pattern.
Preferably, described the second etching gas to the etch-rate of bottom antireflective coating greater than the etch-rate to photoresist, to the etch-rate of photoresist greater than the etch-rate to substrate.
Preferably, by the first etch gas source of the described gas input mechanism of computer control and the gas input ratio of the second etch gas source.
Adopt technical scheme of the present invention, can the photoetching agent pattern critical dimension at different bottom antireflective coating thickness position be compensated, improve the uniformity of pattern critical dimension in the exposing wafer zone, avoid rolling off the production line new mask plate and pay high expense, save the process period time.
Description of drawings
Pattern critical dimension distribution map when Fig. 1 is rear detection of existing 0.13um processing procedure development;
Fig. 2 is the flow chart that improves the engraving method of the pattern critical dimension uniformity in the wafer that the embodiment of the invention provides;
Fig. 3 (a) is the structural representation of wafer to be etched in the embodiment of the invention;
Fig. 3 (b) carries out structural representation after the etching with the first etching gas to the bottom antireflective coating that is not covered by photoetching agent pattern in the embodiment of the invention;
Fig. 3 (c) continues structural representation after the etching with the second etching gas to the bottom antireflective coating that is not covered by photoetching agent pattern of remnants in the embodiment of the invention;
Fig. 4 (a) is the distribution of sizes of pattern in the exposure area in detecting after pattern in detecting after existing 0.11um processing procedure develops and the etching;
Fig. 4 (b) is the distribution of sizes of pattern in the exposure area in detecting after pattern in detecting after adopting the 0.11um processing procedure of embodiment of the invention engraving method to develop and the etching;
Fig. 5 is the structural representation that improves the etch system of the pattern critical dimension uniformity in the wafer that the embodiment of the invention provides.
Embodiment
Further specify technical scheme of the present invention below in conjunction with accompanying drawing and by embodiment.
Fig. 2 is the flow chart that improves the engraving method of the pattern critical dimension uniformity in the wafer that the embodiment of the invention provides, and the method comprises:
S201, provide a substrate, on described substrate, form a bottom antireflective coating, on described bottom antireflective coating, form a photoetching agent pattern.
Shown in Fig. 3 (a), a substrate 33 at first is provided, described substrate 33 for example is multicrystalline silicon substrate.Form a bottom antireflective coating 32 at described substrate 33, the material of described bottom antireflective coating 32 for example is polyimides, and the method for formation for example is method of spin coating (Spin Coating).Then form a photoetching agent pattern 31 on described bottom antireflective coating, described photoetching agent pattern has opening, expose portion bottom antireflective coating 32.
S202, with the first etching gas the bottom antireflective coating that is not covered by described photoetching agent pattern is carried out etching, when described the first etching gas touches substrate, stop etching.
Enter etch process, to remove described do not covered by photoetching agent pattern, the bottom antireflective coating 32 that exposes.
The plasma etching gas that at first uses is the first etching gas, carries out the first step of etch process.Described the first etching gas comprises full replacement fluorocarbon gas, for example CF
4Perhaps C
2F
6Perhaps C
3F
8The full fluorocarbon gas that replaces is to the faster etch rate that has of described bottom antireflective coating 32, mode by the crawl etching end point etches away most of bottom antireflective coating 32, the bottom antireflective coating etching of thinner thickness is complete and when touching substrate 33, etch stop, as shown in Fig. 3 (b), the part of bottom antireflective coating 32 thinner thicknesses of exposure is fully etched.Described crawl etching end point for example is by etch endpoint detection device (End Point Detector, EPD), according to the suitable EPD spectral line of etched material selection.
S203, with the second etching gas the bottom antireflective coating that is not covered by photoetching agent pattern of remnants is continued etching, isotropic side direction reaction occurs to described photoetching agent pattern in described the second etching gas simultaneously, until the described all etchings of bottom antireflective coating quilt that do not covered by photoetching agent pattern.
Enter the second step of etch process, use the second etching gas that the bottom antireflective coating 32 that is not covered by photoetching agent pattern 31 of remnants is proceeded etching.Described the second etching gas comprises that full replacement fluorocarbon gas and part replace fluorocarbon gas; Wherein entirely replace fluorocarbon gas and comprise CF
4Perhaps C
2F
6Perhaps C
3F
8Part replaces fluorocarbon gas and comprises CHF
3Perhaps CH
2F
2Perhaps CH
3F.
Shown in Fig. 3 (c), the full fluorocarbon gas that replaces replaces the mist that fluorocarbon gas forms with part in this step, and is more relatively slow than full replacement fluorocarbon gas to the etch-rate of bottom antireflective coating 32.In the etching process, the remaining bottom antireflective coating 32 that is not covered by photoetching agent pattern 31, because the directivity of plasma reaction vertical direction, preferential and the remaining bottom antireflective coating 32 of the second etching gas reacts, and the remaining bottom antireflective coating 32 that is not covered by photoetching agent pattern 31 is constantly consumed until all etchings.
Since described the second etching gas to the etch-rate of bottom antireflective coating greater than the etch-rate to photoresist, to the etch-rate of photoresist greater than the etch-rate to substrate, therefore described the second etching gas selection ratio higher to having of substrate.The whole etched positions of bottom antireflective coating 32 in S202, described the second etching gas can not react with the substrate 33 that exposes.But to photoetching agent pattern 31, isotropic side direction reaction can occur in described the second etching gas, can etch away the part photoetching agent pattern at above-mentioned position, the critical dimension of the photoetching agent pattern at this position is dwindled, make the photoetching agent pattern critical dimension at the photoetching agent pattern critical dimension at this position and bottom antireflective coating 32 thicker positions more approaching, improve the uniformity of photoetching agent pattern critical dimension.The embodiment of the invention is utilized above-mentioned reaction characteristics just, the photoetching agent pattern critical dimension at different bottom antireflective coating thickness position is compensated, thereby improve the critical dimension of patterns uniformity in the exposing wafer zone.
Shown in Fig. 4 (a) and Fig. 4 (b), the distribution of sizes of pattern in the exposure area in detecting after pattern in after 0.11um Flash CG layer develops, detecting and the etching, as the method that adopts the embodiment of the invention to provide, the critical dimension difference of pattern in the exposure area can be decreased to 8nm by existing 15nm.
Fig. 5 is the structural representation that improves the etch system of the pattern critical dimension uniformity in the wafer that the embodiment of the invention provides, this system comprises a Room 52, one gas input mechanism 54, a pair of electrode 58 that is arranged in the chamber 52, and the radio freqnency generator 60 that is electrically connected with electrode 58.
Wherein chamber 52 can hold a substrate 62, forms a bottom antireflective coating on the substrate 62, forms a photoetching agent pattern on the described bottom antireflective coating.Gas input mechanism 54 connects the first etch gas source 56A and the second etch gas source 56B; Described the first etching gas comprises full replacement fluorocarbon gas, for example CF
4Perhaps C
2F
6Perhaps C
3F
8, described the second etching gas comprises that full replacement fluorocarbon gas and part replace fluorocarbon gas, wherein entirely replace fluorocarbon gas and comprise CF
4Perhaps C
2F
6Perhaps C
3F
8, part replaces fluorocarbon gas and comprises CHF
3Perhaps CH
2F
2Perhaps CH
3F.
Described radio freqnency generator 60 is used for producing the plasma 61 that contains above-mentioned etching gas between 52 electrodes 58 of chamber, the bottom antireflective coating that is not covered by described photoetching agent pattern is carried out etching, isotropic side direction reaction occurs to described photoetching agent pattern in described the second etching gas, until the described all etchings of bottom antireflective coating quilt that do not covered by photoetching agent pattern.Described the second etching gas to the etch-rate of bottom antireflective coating greater than the etch-rate to photoresist, to the etch-rate of photoresist greater than the etch-rate to substrate, therefore described the second etching gas selection ratio higher to having of substrate.In another preferred embodiment, described radio freqnency generator 60 ground connection can be omitted top electrode in the chamber 52.
Described gas input mechanism 54 is controlled the gas input ratio of described the first etch gas source 56A and the second etch gas source 56B usually by computer control.
Adopt technical scheme of the present invention, can the photoetching agent pattern critical dimension at different bottom antireflective coating thickness position be compensated, improve the uniformity of pattern critical dimension in the exposing wafer zone, avoid rolling off the production line new mask plate and pay high expense, save the process period time.
The above; only for the better embodiment of the present invention, but protection scope of the present invention is not limited to this, anyly is familiar with the people of this technology in the disclosed technical scope of the present invention; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claim.
Claims (10)
1. an engraving method that improves the pattern critical dimension uniformity in the wafer is characterized in that, the method comprises:
One substrate is provided, on described substrate, forms a bottom antireflective coating, on described bottom antireflective coating, form a photoetching agent pattern;
With the first etching gas the bottom antireflective coating that is not covered by described photoetching agent pattern is carried out etching, until described the first etching gas touches described substrate;
With the bottom antireflective coating continuation etching that not by photoetching agent pattern covered of the second etching gas to remnants, isotropic side direction reaction occurs to described photoetching agent pattern in described the second etching gas simultaneously, until the described all etchings of bottom antireflective coating quilt that do not covered by photoetching agent pattern.
2. engraving method as claimed in claim 1 is characterized in that, described the first etching gas comprises full replacement fluorocarbon gas.
3. engraving method as claimed in claim 1 is characterized in that, described the second etching gas comprises that full replacement fluorocarbon gas and part replace fluorocarbon gas.
4. engraving method as claimed in claim 2 or claim 3 is characterized in that, described full replacement fluorocarbon gas comprises CF
4Perhaps C
2F
6Perhaps C
3F
8
5. engraving method as claimed in claim 3 is characterized in that, described part replaces fluorocarbon gas and comprises CHF
3Perhaps CH
2F
2Perhaps CH
3F.
6. engraving method as claimed in claim 1 is characterized in that, described the second etching gas to the etch-rate of bottom antireflective coating greater than the etch-rate to photoresist, to the etch-rate of photoresist greater than the etch-rate to substrate.
7. engraving method as claimed in claim 1 is characterized in that, described backing material is polysilicon.
8. an etch system that improves the pattern critical dimension uniformity in the wafer is characterized in that, comprising:
One Room, this chamber can hold a substrate, forms a bottom antireflective coating on the described substrate, forms a photoetching agent pattern on the described bottom antireflective coating;
One gas input mechanism, this gas input mechanism connects the first etch gas source and the second etch gas source; Described the first etching gas comprises full replacement fluorocarbon gas, and described the second etching gas comprises that full replacement fluorocarbon gas and part replace fluorocarbon gas;
Be arranged at least one electrode in the described chamber; And
One radio freqnency generator, be electrically connected with described at least one electrode, be used for described the first etching gas or the second etching gas are formed plasma, the bottom antireflective coating that is not covered by described photoetching agent pattern is carried out etching, isotropic side direction reaction occurs to described photoetching agent pattern in described the second etching gas, until the described all etchings of bottom antireflective coating quilt that do not covered by photoetching agent pattern.
9. etch system as claimed in claim 8 is characterized in that, described the second etching gas to the etch-rate of bottom antireflective coating greater than the etch-rate to photoresist, to the etch-rate of photoresist greater than the etch-rate to substrate.
10. etch system as claimed in claim 8 is characterized in that, by the first etch gas source of the described gas input mechanism of computer control and the gas input ratio of the second etch gas source.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210369249.0A CN102867745B (en) | 2012-09-27 | 2012-09-27 | A kind of engraving method and system improving uniformity of critical dimension of pattern in wafer |
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| CN201210369249.0A CN102867745B (en) | 2012-09-27 | 2012-09-27 | A kind of engraving method and system improving uniformity of critical dimension of pattern in wafer |
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| CN102867745B CN102867745B (en) | 2016-01-20 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465364A (en) * | 2014-04-22 | 2015-03-25 | 上海华力微电子有限公司 | Polycrystalline silicon etching method for eliminating active region damage |
| CN105097454A (en) * | 2014-05-23 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Method for improving evenness of critical size |
| CN105097579A (en) * | 2014-05-06 | 2015-11-25 | 无锡华润上华科技有限公司 | Measuring method, etching method, and forming method of semiconductor device |
| CN109143951A (en) * | 2017-06-27 | 2019-01-04 | 亚智科技股份有限公司 | process monitoring method and process monitoring system |
| CN111681957A (en) * | 2020-07-24 | 2020-09-18 | 上海华虹宏力半导体制造有限公司 | Etching method and manufacturing method of semiconductor device |
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| US20010036732A1 (en) * | 2000-04-27 | 2001-11-01 | Nec Corporation | Method of manufacturing semiconductor device having minute gate electrodes |
| US20030092281A1 (en) * | 2001-11-13 | 2003-05-15 | Chartered Semiconductors Manufactured Limited | Method for organic barc and photoresist trimming process |
| CN1505831A (en) * | 2001-03-20 | 2004-06-16 | Ӧ�ò��Ϲ�˾ | Method of etching organic antireflection coating (ARC) layers |
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2012
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010036732A1 (en) * | 2000-04-27 | 2001-11-01 | Nec Corporation | Method of manufacturing semiconductor device having minute gate electrodes |
| CN1505831A (en) * | 2001-03-20 | 2004-06-16 | Ӧ�ò��Ϲ�˾ | Method of etching organic antireflection coating (ARC) layers |
| US20030092281A1 (en) * | 2001-11-13 | 2003-05-15 | Chartered Semiconductors Manufactured Limited | Method for organic barc and photoresist trimming process |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465364A (en) * | 2014-04-22 | 2015-03-25 | 上海华力微电子有限公司 | Polycrystalline silicon etching method for eliminating active region damage |
| CN104465364B (en) * | 2014-04-22 | 2018-02-02 | 上海华力微电子有限公司 | A kind of polycrystalline silicon etching method for eliminating active area |
| CN105097579A (en) * | 2014-05-06 | 2015-11-25 | 无锡华润上华科技有限公司 | Measuring method, etching method, and forming method of semiconductor device |
| CN105097579B (en) * | 2014-05-06 | 2018-04-13 | 无锡华润上华科技有限公司 | Method for measurement, engraving method and the forming method of semiconductor device |
| CN105097454A (en) * | 2014-05-23 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Method for improving evenness of critical size |
| CN109143951A (en) * | 2017-06-27 | 2019-01-04 | 亚智科技股份有限公司 | process monitoring method and process monitoring system |
| CN111681957A (en) * | 2020-07-24 | 2020-09-18 | 上海华虹宏力半导体制造有限公司 | Etching method and manufacturing method of semiconductor device |
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| CN102867745B (en) | 2016-01-20 |
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