CN102867719A - Ion source insulation device - Google Patents
Ion source insulation device Download PDFInfo
- Publication number
- CN102867719A CN102867719A CN2011101864657A CN201110186465A CN102867719A CN 102867719 A CN102867719 A CN 102867719A CN 2011101864657 A CN2011101864657 A CN 2011101864657A CN 201110186465 A CN201110186465 A CN 201110186465A CN 102867719 A CN102867719 A CN 102867719A
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- China
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- source
- flange
- ion
- ion source
- implantor
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Abstract
The invention discloses an ion source insulation device for an ion implantation machine. The ion source insulation device for the ion implantation machine can produce wide belts or flat belts. The insulation device is invented to isolate high potential from ground potential so as to ensure the normal operation of the ion implantation machine. The device mainly comprises an ion source (1), flange connecting rods (2), a source installation flange (3), a lead-out insulation ring (4), a source flange (5), a shielding cylinder (6), a vacuum chamber (7), and the like. The device is characterized in that the special lead-out insulation ring (4) is adopted and arranged between the source installation flange (3) and the source flange (5), and the source installation flange (3) and the source flange (5) are connected by the flange connecting rods (2) so that the high potential and the ground potential can be well protected. The working principle of the device is explained in detail and a specific implementation plan is given in the specification.
Description
Technical field
The present invention relates to a kind of ion source seal, be particularly suitable for the ion implantor in the semiconductor manufacturing equipment.
Background technology
Ion implantor is the exemplary apparatus that the semiconductor technology intermediate ion mixes, and ion source produces the ion beam that needs doping, and ion beam passes through quality analysis, correction, acceleration again, is transferred to the silicon chip surface that is in target chamber end process cavity.
Along with the semiconductor device integrated level is more and more higher, semiconductor manufacturing equipment becomes increasingly complex, and requires also more and more higher to ionogenic line.For injection technology, the ion implantor of low-yield large speed stream is the direction of development.The ion source that is applicable to such ion implantor need to produce broadband bundle or flat-shaped band bundle.The present invention just is being based on such ion source of application and is designing.
Summary of the invention
For the requirement of existing semiconductor technology intermediate ion implanter equipment development, the present invention designs a kind of seal for ion source of ion implanter.This device relates to a kind of dead ring of drawing, and is used for ion source and earthy isolation.Draw dead ring from design angle protection ion source high potential, realize the electricity isolation.
This device also relates to the flange connect mode of drawing the dead ring two ends, and this connecting mode is the coupling bar that adopts a kind of insulating material to make, and the coupling bar array distribution is being drawn around the dead ring.
This device also is designed into the design of a kind of shielding cylinder, and it can prevent that metallic particles from entering and being attached to and draw the dead ring inner surface.
The present invention has following distinguishing feature:
1. insulation effect is obvious;
2. simple in structure, be convenient to processing and manufacturing;
Description of drawings
Fig. 1 is a kind of front view and cutaway view for ion source seal assembly.
Fig. 2 is front view and the cutaway view of drawing dead ring.
Embodiment
The invention will be described further below in conjunction with the drawings and specific embodiments, but not as the restriction to patent of the present invention.
The invention discloses a kind of ion source seal for ion implantor, as shown in Figure 1, and ion implantor uses together with ion source.This ion source can produce broadband bundle or flat-shaped band bundle.This device is for making its normal operation isolated high-voltage current potential and earth potential.This device mainly comprises: ion source (1), flange connect bar (2), source mounting flange (3), draw dead ring (4), source flange (5), shielding cylinder (6) and vacuum chamber (7) etc.
As shown in Figure 1, draw dead ring (4) and be installed between source mounting flange (3) and the source flange (5), can well protect high-voltage and earth potential.As shown in Figure 2, draw dead ring (4) and adopt insulating material processing, the shape that the inner surface formation rule rises and falls for increasing surface area, is avoided laying dust, produces creepage.
Utilize flange connect bar (2) to connect between source mounting flange (3) and source flange (5), flange connect bar (2) adopts the stronger insulating material of tensile strength, and be evenly distributed on draw dead ring (4) around.
Source mounting flange (5) is used for ion source (1) is installed, and it is closely drawn the dead ring end face and is circular-arc, produces electric discharge phenomena to avoid it in dead ring.
Source flange (5) is used for drawing dead ring (4) and connects vacuum chamber (7).
Shielding cylinder (6) is installed and the inboard of drawing dead ring (4), is fixed on the flange of source; Its oval in shape, and be processed into circular-arcly at non-installation end, in dead ring, produce electric discharge phenomena to avoid it.
Specific embodiment of the present invention elaborates content of the present invention.For persons skilled in the art, any apparent change of without departing from the premise in the spirit of the present invention it being done all consists of the infringement to patent of the present invention, will bear corresponding legal liabilities.
Claims (5)
1. ion source seal that is used for ion implantor, and ion implantor uses together with ion source.This ion source can produce broadband bundle or flat-shaped band bundle.This device is for making its normal operation isolated high-voltage current potential and earth potential.This device mainly comprises: ion source (1), flange connect bar (2), source mounting flange (3), draw dead ring (4), source flange (5), shielding cylinder (6) and vacuum chamber (7) etc.
2. such as claim 1 described a kind of ion source seal for ion implantor; this device characteristic is; employing is drawn especially dead ring (4) and is installed between source mounting flange (3) and the source flange (5), can well protect high-voltage and earth potential.
3. such as claim 1 described a kind of ion source seal for ion implantor, this device characteristic is, utilizes flange connect bar (2) to connect between source mounting flange (3) and source flange (5).
4. such as claim 2 described a kind of ion source seals for ion implantor, it is characterized in that: draw dead ring (4) and adopt insulating material processing, the shape that the inner surface formation rule rises and falls is for increasing surface area.
5. such as claim 3 described a kind of ion source seals for ion implantor, it is characterized in that: flange connect bar (2) adopts the insulating material manufacturing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101864657A CN102867719A (en) | 2011-07-05 | 2011-07-05 | Ion source insulation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101864657A CN102867719A (en) | 2011-07-05 | 2011-07-05 | Ion source insulation device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102867719A true CN102867719A (en) | 2013-01-09 |
Family
ID=47446510
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011101864657A Pending CN102867719A (en) | 2011-07-05 | 2011-07-05 | Ion source insulation device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102867719A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105895549A (en) * | 2014-12-18 | 2016-08-24 | 北京中科信电子装备有限公司 | Insulating ring assembly of ion implanter |
| CN111584334A (en) * | 2020-04-09 | 2020-08-25 | 中国科学院微电子研究所 | Insulation structure for ion implantation device |
| CN113529041A (en) * | 2021-07-13 | 2021-10-22 | 中国工程物理研究院流体物理研究所 | Ion beam injection device and method for inhibiting secondary electron emission of insulating dielectric material |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4562355A (en) * | 1981-12-18 | 1985-12-31 | Gesellschaft Fur Schwerionenforschung Mbh Darmstadt | High current ion source |
| CN86201075U (en) * | 1986-03-01 | 1986-12-31 | 中国科学院空间中心 | High-energy and broad beam divergent field koufmen ion gun for surface modification |
| JPH06231712A (en) * | 1993-02-02 | 1994-08-19 | Nissin Electric Co Ltd | Ecr type ion source |
| US20040000651A1 (en) * | 2000-08-07 | 2004-01-01 | Horsky Thomas N. | Ion source having replaceable and sputterable solid source material |
| US20100108915A1 (en) * | 2008-11-06 | 2010-05-06 | Klaus Becker | Conductive Contamination Resistant Insulator |
-
2011
- 2011-07-05 CN CN2011101864657A patent/CN102867719A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4562355A (en) * | 1981-12-18 | 1985-12-31 | Gesellschaft Fur Schwerionenforschung Mbh Darmstadt | High current ion source |
| CN86201075U (en) * | 1986-03-01 | 1986-12-31 | 中国科学院空间中心 | High-energy and broad beam divergent field koufmen ion gun for surface modification |
| JPH06231712A (en) * | 1993-02-02 | 1994-08-19 | Nissin Electric Co Ltd | Ecr type ion source |
| US20040000651A1 (en) * | 2000-08-07 | 2004-01-01 | Horsky Thomas N. | Ion source having replaceable and sputterable solid source material |
| US20100108915A1 (en) * | 2008-11-06 | 2010-05-06 | Klaus Becker | Conductive Contamination Resistant Insulator |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105895549A (en) * | 2014-12-18 | 2016-08-24 | 北京中科信电子装备有限公司 | Insulating ring assembly of ion implanter |
| CN105895549B (en) * | 2014-12-18 | 2019-11-29 | 北京中科信电子装备有限公司 | Insulating ring assembly of ion implanter |
| CN111584334A (en) * | 2020-04-09 | 2020-08-25 | 中国科学院微电子研究所 | Insulation structure for ion implantation device |
| CN113529041A (en) * | 2021-07-13 | 2021-10-22 | 中国工程物理研究院流体物理研究所 | Ion beam injection device and method for inhibiting secondary electron emission of insulating dielectric material |
| CN113529041B (en) * | 2021-07-13 | 2023-03-14 | 中国工程物理研究院流体物理研究所 | Ion beam injection device and method for inhibiting secondary electron emission of insulating dielectric material |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| DD01 | Delivery of document by public notice |
Addressee: Zhongkexin Electronic Equipment Co., Ltd., Beijing Document name: Notification that Application Deemed to be Withdrawn |
|
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130109 |