CN102866575B - Manufacture method of phase-shift optical mask - Google Patents
Manufacture method of phase-shift optical mask Download PDFInfo
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- CN102866575B CN102866575B CN201210389029.4A CN201210389029A CN102866575B CN 102866575 B CN102866575 B CN 102866575B CN 201210389029 A CN201210389029 A CN 201210389029A CN 102866575 B CN102866575 B CN 102866575B
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Abstract
The invention provides a manufacture method of a phase-shift optical mask. On a phase-shift optical mask substrate containing first photoresist capable of forming a hard film, a first domain graph structure is formed in the first photoresist through first photoetching. After the first domain graph structure is heated and cured, a cross linking material is coated on the first photoresist so as to cure the first domain graph structure in the first photoresist, an isolation film which is not soluble in second photoresist is formed, and redundant cross linking materials are removed. The second photoresist is coated on the first photresist. Second photoetching is conducted so as to form a second domain graph structure in a second photoresist film. A first domain graph and a second domain graph in the photoresist are transferred to a molybdenum silicide film which is partially light-transmitting and a non-transmitting chromium film respectively, and manufacture of the phase-shift optical mask is finished. The method reduces etching steps in the phase-shift optical mask manufacture process, productivity can be improved effectively, and manufacture cost can be reduced effectively.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, the present invention relates to a kind of phase-shift photomask method for making.
Background technology
Photoetching process is one of critical process of making in large scale integrated circuit.Photoetching process is that the domain figure on optical mask plate is transferred in photoresist film, and the photoresist film that contains domain figure is used to the mask of follow-up Implantation or etching processing procedure.Photomask has been born important role in photoetching process.Along with the integrated level of semi-conductor chip improves constantly, transistorized characteristic dimension is constantly dwindled, more and more higher to the requirement of photoetching process, and phase-shift photomask becomes the main flow photomask of high-end photoetching process gradually.
As shown in Figure 1A, phase-shift photomask is by the photoetching-etching-photoetching-etching process of phase-shift photomask substrate is made.Phase-shift photomask substrate consists of the Guiization Molybdenum film 2 of quartz substrate 1, part printing opacity, lighttight chromium thin film 3, the first photoresist 4.Figure 1B-1D has shown the phase-shift photomask fabrication processing of main flow.By the first photoetching be etched in silicon Molybdenum film 2 and chromium thin film 3 and form the first domain figure 5 structures, as shown in Figure 1B.In the first domain figure 5 structures, be coated with the second photoresist 6, as shown in Figure 1 C, by the second photoetching be etched in silicon Molybdenum film 2 and form the second domain figure 7 structures in the first domain figure 5 structures, as shown in Fig. 1 D, complete phase-shift photomask and make.
At device size micro, enter into after 32 nm technology node, single photolithographic exposure cannot meet makes the required resolution of intensive linear array figure.Double-pattern (double patterning) forming technique as the main method that solves this technical barrier by large quantity research and be widely used in making the intensive linear array figure of the following technology node of 32 nanometer.Fig. 2 A-2E illustrates the process that double-pattern forming technique is made intensive linear array figure.Need to make on the silicon substrate 20 of intensive linear array figure, deposition substrate film 21 and hard mask 22, then be coated with the first photoresist 23 (Fig. 2 A), after exposure, development, etching, in hard mask 22, form the first litho pattern 24 (Fig. 2 B), the characteristic dimension ratio of its lines and groove is 1:3.On this silicon chip, be coated with the second photoresist 25 (Fig. 2 C), after exposure and development, in the second photoresist 25 films, form the second litho pattern 26 (Fig. 2 D), the characteristic dimension ratio of its lines and groove is also 1:3, but its position and the first litho pattern 24 are staggered.Continue to be etched on silicon substrate and to form second litho pattern 26 (Fig. 2 E) staggered with the first litho pattern 24.The combination of the first litho pattern 24 and the second litho pattern 26 has formed the intensive linear array figure that target lines and trench features dimension scale are 1:1.
Double-pattern forming technique needs Twi-lithography and etching, i.e. photoetching-etching-photoetching-etching.Its cost is far longer than traditional single exposure forming technique.The cost that reduces double-pattern forming technique becomes one of direction of new technology development.US Patent No. 20100330501 has been reported after the first litho pattern 24 develops, in same developing machine platform, first the first litho pattern (24) that is heating and curing is then coated with the method that the cross-linked material of amino-contained solidifies the first litho pattern 24 in the first photoresist 23 on the first photoresist 23.Adopting the double-pattern shaping process after the method is photoetching (develop and solidify)-photoetching-etching.Omit the first etch step in former technique, thereby effectively reduced the cost of double-pattern forming technique.This method is also referred to as double-exposure technique.
Phase-shift photomask manufacturing process comprises the steps such as photoetching-etching-photoetching-etching.Twice etching is merged into a step etching, substitutes two step independent process in former technique, can effectively reduce the cost that phase-shift photomask is made, and can improve production quantum of output.
But, according to the step of the phase-shift photomask manufacturing process of prior art, still simplify not.
Summary of the invention
Technical matters to be solved by this invention is for there being above-mentioned defect in prior art, etch step in a kind of manufacture craft that can effectively reduce phase-shift photomask is provided, thereby effectively improves production capacity and reduce the phase-shift photomask method for making of cost of manufacture.
In order to realize above-mentioned technical purpose, according to the present invention, provide a kind of phase-shift photomask to make, it comprises: first step: on the phase-shift photomask substrate of the first photoresist that contains the dura mater that can be shaped, form the first domain graphic structure by the first photoetching in the first photoresist; Second step: after the first domain graphic structure that is heating and curing, be coated with cross-linked material to solidify the structure of the first domain figure in the first photoresist on the first photoresist, form the barrier film that is insoluble to the second photoresist, remove unnecessary cross-linked material; Third step: be coated with the second photoresist on the first photoresist after solidifying; The 4th step: form the structure of the second domain figure thereby carry out the second photoetching in the second photoresist film; The 5th step: by etching, the first domain figure in photoresist and the second domain figure are transferred to respectively in the silicon Molybdenum film and lighttight chromium thin film of part printing opacity, completed phase-shift photomask and make.
Preferably, the first photoetching comprises and exposes for the first time and develop.
Preferably, the second photoetching comprises and exposes for the second time and develop.
Preferably, the first photoresist is the photoresist of silane-group containing, silicon alkoxy and cage type siloxane.
Preferably, the anti-etching of the first photoresist and the second photoresist can force rate be more than or equal to 1.5:1.
Preferably, cross-linked material comprises quaternary ammonium base and aminated compounds.
Preferably, curing the enclosing of heating-up temperature of the first photoresist is 150 ℃ to 200 ℃.
Preferably, curing the enclosing of heating-up temperature of the first photoresist is 170 ℃ to 180 ℃.
Preferably, in second step, utilize deionized water to remove unnecessary cross-linked material.
According to the present invention, utilize double-exposure technique and the dura mater photoresist that can be shaped, reduced the etch step in phase-shift photomask manufacture craft, can effectively improve production capacity and reduce cost of manufacture.
Accompanying drawing explanation
By reference to the accompanying drawings, and by reference to detailed description below, will more easily to the present invention, there is more complete understanding and more easily understand its advantage of following and feature, wherein:
Figure 1A schematically shows the structure of phase-shift photomask.
Figure 1B-1D schematically shows the phase-shift photomask fabrication processing of prior art.
Fig. 2 A-2E schematically shows the process that double-pattern forming technique is made intensive linear array figure.
Fig. 3 A-3E schematically shows according to each step of the phase-shift photomask method for making of the embodiment of the present invention.
It should be noted that, accompanying drawing is used for illustrating the present invention, and unrestricted the present invention.Note, the accompanying drawing that represents structure may not be to draw in proportion.And in accompanying drawing, identical or similar element indicates identical or similar label.
Embodiment
In order to make content of the present invention more clear and understandable, below in conjunction with specific embodiments and the drawings, content of the present invention is described in detail.
The present invention proposes a kind of technique of utilizing double-exposure technique and can being shaped dura mater photoresist making phase-shift photomask.Specifically, Fig. 3 A-3E schematically shows according to each step of the phase-shift photomask method for making of the embodiment of the present invention.
As shown in Fig. 3 A-3E, according to the phase-shift photomask method for making of the embodiment of the present invention, comprise:
First step: on the phase-shift photomask substrate that contains dura mater the first photoresist 4 that can be shaped (as shown in figure Figure 1A); by the first photoetching (specifically; expose for the first time and develop) in the first photoresist 4, form the first domain figure 5 structures, as shown in Figure 3A.
Second step: after first domain figure (5) structure that is heating and curing, on the first photoresist 4, be coated with the structure that cross-linked material solidifies the first domain figure 5 in the first photoresist 4, formation is insoluble to the barrier film 8 of the second photoresist 6, available for example deionized water is removed unnecessary cross-linked material, as shown in Figure 3 B.
Third step: be coated with the second photoresist 6 on the first photoresist 4 after solidifying, as shown in Figure 3 C.
The 4th step: carry out the second photoetching (specifically, expose for the second time and develop) thus in the second photoresist 6 films, form the second domain figure 7 structures, as shown in Figure 3 D.
The 5th step: by etching, the first domain figure 5 in photoresist and the second domain figure 7 are transferred to respectively in the silicon Molybdenum film 2 and lighttight chromium thin film 3 of part printing opacity, completed phase-shift photomask and make, as shown in Fig. 3 E.
This technique has reduced makes the etch step in phase-shift photomask technique, can effectively improve production capacity and reduce cost of manufacture.
Preferably, the first photoresist 4 can be selected the photoresist that can form dura mater, further preferred, and the first photoresist 4 is photoresists of silane-group containing (silyl), silicon alkoxy (siloxyl) and cage type siloxane (silsesquioxane).
Preferably, the anti-etching of the first photoresist 4 and the second photoresist 6 can force rate be more than or equal to 1.5:1.
Preferably, the principal ingredient of cross-linked material is quaternary ammonium base and aminated compounds.
Preferably, curing the enclosing of heating-up temperature of the first photoresist 4 is 150 ℃ to 200 ℃; Further preferred, 170 ℃ to 180 ℃.
In addition, it should be noted that, the descriptions such as the term in instructions " first ", " second ", " the 3rd " are only for distinguishing each assembly, element, step of instructions etc., rather than for representing logical relation between each assembly, element, step or ordinal relation etc.
Be understandable that, although the present invention with preferred embodiment disclosure as above, yet above-described embodiment is not in order to limit the present invention.For any those of ordinary skill in the art, do not departing from technical solution of the present invention scope situation, all can utilize the technology contents of above-mentioned announcement to make many possible changes and modification to technical solution of the present invention, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not depart from technical solution of the present invention,, all still belongs in the scope of technical solution of the present invention protection any simple modification made for any of the above embodiments, equivalent variations and modification according to technical spirit of the present invention.
Claims (7)
1. a phase-shift photomask method for making, is characterized in that, comprising:
First step: on the phase-shift photomask substrate of the first photoresist that contains the dura mater that can be shaped, form the first domain graphic structure by the first photoetching in the first photoresist;
Second step: after the first domain graphic structure that is heating and curing, on the first photoresist, be coated with cross-linked material to solidify the structure of the first domain figure in the first photoresist, formation is insoluble to the barrier film of the second photoresist, utilize deionized water to remove unnecessary cross-linked material, cross-linked material comprises quaternary ammonium base and aminated compounds;
Third step: be coated with the second photoresist on the first photoresist after solidifying;
The 4th step: form the structure of the second domain figure thereby carry out the second photoetching in the second photoresist film;
The 5th step: by etching, the first domain figure in photoresist and the second domain figure are transferred to respectively in the silicon Molybdenum film and lighttight chromium thin film of part printing opacity, completed phase-shift photomask and make.
2. phase-shift photomask method for making according to claim 1, is characterized in that, the first photoetching comprises and exposes for the first time and develop.
3. phase-shift photomask method for making according to claim 1 and 2, is characterized in that, the second photoetching comprises and exposes for the second time and develop.
4. phase-shift photomask method for making according to claim 1 and 2, is characterized in that, the first photoresist is the photoresist of silane-group containing, silicon alkoxy and cage type siloxane.
5. phase-shift photomask method for making according to claim 1 and 2, is characterized in that, the anti-etching of the first photoresist and the second photoresist can force rate be more than or equal to 1.5:1.
6. phase-shift photomask method for making according to claim 1 and 2, is characterized in that, it is 150 ℃ to 200 ℃ that the first photoresist solidifies enclosing of heating-up temperature.
7. phase-shift photomask method for making according to claim 1 and 2, is characterized in that, it is 170 ℃ to 180 ℃ that the first photoresist solidifies enclosing of heating-up temperature.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101571674A (en) * | 2009-06-09 | 2009-11-04 | 上海集成电路研发中心有限公司 | Double exposure method |
| CN102236247A (en) * | 2010-05-06 | 2011-11-09 | 中芯国际集成电路制造(上海)有限公司 | Preparation method of photomask |
| CN102830588A (en) * | 2012-09-19 | 2012-12-19 | 上海华力微电子有限公司 | Method for fabricating phase-shift photomask |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101571674A (en) * | 2009-06-09 | 2009-11-04 | 上海集成电路研发中心有限公司 | Double exposure method |
| CN102236247A (en) * | 2010-05-06 | 2011-11-09 | 中芯国际集成电路制造(上海)有限公司 | Preparation method of photomask |
| CN102830588A (en) * | 2012-09-19 | 2012-12-19 | 上海华力微电子有限公司 | Method for fabricating phase-shift photomask |
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