CN102866553B - A method for manufacturing a panel-type metal oxide plane switching liquid crystal display - Google Patents

A method for manufacturing a panel-type metal oxide plane switching liquid crystal display Download PDF

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CN102866553B
CN102866553B CN201210364959.4A CN201210364959A CN102866553B CN 102866553 B CN102866553 B CN 102866553B CN 201210364959 A CN201210364959 A CN 201210364959A CN 102866553 B CN102866553 B CN 102866553B
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grid
electrode
line
common electrode
tft
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CN102866553A (en
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焦峰
王海宏
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南京中电熊猫液晶显示科技有限公司
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Abstract

本发明提供一种金属氧化物平面开关型液晶显示面板,包括:扫描线;信号线,与扫描线纵横交叉,像素单元,由扫描线和信号线交叉限定,所述每个像素单元包括薄膜晶体管和像素电极,所述薄膜晶体管包括与扫描线电性连接的TFT栅极、与信号线连接线电性连接的TFT源极、以及与栅格状像素电极连接的TFT漏极;共通电极线,与扫描线平行设置;栅格状共通电极,与共通电极线电性连接;该栅格状共通电极与栅格像素电极均交错位于像素区域,且所述栅格状共通电极与栅格像素电极位于同一层。 The present invention provides a metal oxide-plane switching type liquid crystal display panel, comprising: a scan line; a signal line, the scanning lines crisscross, a pixel unit by the scanning lines and signal lines intersect is defined, each of the pixel units comprises a thin film transistor and a pixel electrode, the thin film transistor TFT includes a gate electrode electrically connected to the scanning lines, TFT source connected to a signal line electrically connected to the electrode line, and a TFT drain connected to the grid-shaped pixel electrode; the common electrode line, scanning lines disposed in parallel; grid-shaped common electrode and the common electrode line is electrically connected; the grid-shaped electrode and the common electrode are staggered grid pixels located in the pixel region, and the grid-like common electrode and the pixel electrode grid at the same level. 本发明以金属氧化物作为TFT沟道半导体、源漏电极、栅格状像素电极或栅格状共通电极使用,可以提高TFT驱动能力和简化工艺。 The present invention is a metal oxide semiconductor as a channel TFT, source and drain electrodes, a grid-like or lattice-like pixel electrode using the common electrode, TFT driving capability can be improved and simplified.

Description

一种金属氧化物平面开关型液晶显示面板的制造方法 A method for manufacturing a panel-type metal oxide plane switching liquid crystal display

技术领域 FIELD

[0001] 本发明涉及一种金属氧化物平面开关型液晶显示面板的制造方法。 [0001] The present invention relates to a method of manufacturing a panel of a metal oxide-plane switching type liquid crystal display.

背景技术 Background technique

[0002] 传统的CRT显示器依靠阴极射线管发射电子撞击屏幕上的磷光粉来显示图像,但液晶显示的原理则完全不同。 [0002] The conventional CRT displays rely on cathode-ray tube emitting the electrons impinge on the phosphor screen to display the image, but the principle is completely different from the liquid crystal display. 通常,液晶显示(LCD)装置具有上基板和下基板,彼此有一定间隔和互相正对。 Typically, a liquid crystal display (LCD) device having an upper and lower substrates, spaced from each other and each have a positive pairs. 形成在两个基板上的多个电极相互正对。 A plurality of electrodes formed on substrates facing each other two pairs. 液晶夹在上基板和下基板之间。 A liquid crystal sandwiched between the upper and lower substrates. 电压通过基板上的电极施加到液晶上,然后根据所作用的电压改变液晶分子的排列从而显示图像、因为如上所述液晶显示装置不发射光,它需要光源来显示图像。 By applying a voltage to the electrodes on the substrate of the liquid crystal, and then changing the arrangement of liquid crystal molecules according to a voltage acts so as to display an image, as described above, the liquid crystal display device does not emit light, it requires a light source to display an image. 因此,液晶显示装置具有位于液晶面板后面的背光源。 Thus, the liquid crystal display device having a backlight positioned behind the liquid crystal panel. 根据液晶分子的排列控制从背光源入射的光量从而显示图像。 The arrangement of liquid crystal molecules controls the amount of light incident from the backlight to display an image. 如图1所示,上层偏光片101和下层偏光片109之间夹有彩膜基板104、共通电极105、液晶层106和阵列基板107,液晶分子是具有折射率及介电常数各向异性的物质。 As shown, there is an upper polarizer and the lower polarizer 101 between the clip 109 of the color filter substrate 104, a common electrode 105, the liquid crystal layer 106 and array substrate 107, liquid crystal molecules having a dielectric anisotropy of refractive index and substance. 在阵列基板107上形成像素电极108、薄膜晶体管(TFT) 114、阵列子像素111、扫描线110、信号线112等。 Forming a pixel electrode on the array substrate 107 108, a thin film transistor (TFT) 114, an array of sub-pixels 111, scan lines 110, signal lines 112 and the like. 信号线112连接到TFT的漏极,像素电极108连接到源级,扫描线110连接到栅极。 Signal line 112 is connected to the drain of the TFT, the pixel electrode 108 is connected to the source level, the scanning line 110 is connected to the gate. 背光源113发出的光线经过下偏光片109,成为具有一定偏振方向的偏振光。 Light emitted from the backlight 113 through the lower polarizer 109, it becomes polarized light having a certain polarization direction. 薄膜晶体管114控制像素电极108之间所加电压,而该电压作用于液晶来控制偏振光的偏振方向,偏振光透过相应的彩膜102后形成单色偏振光,如果偏振光能够穿透上层偏光片101,则显示出相应的颜色;电场强度不同,液晶分子的偏转角度也不同,透过的光强不一样,显示的亮度也不同。 114 controls the applied voltage between the pixel electrode 108 a thin film transistor, and the voltage applied to the liquid crystal to control the direction of polarized light, polarized light transmitted through the polarized monochromatic forming respective color filter 102, if the polarized light is able to penetrate the upper layer polarizer 101, displays the corresponding colors; different electric field strength, the deflection angle of the liquid crystal molecules are different, the transmission light intensity is not the same, the brightness of the display varies. 通过红绿蓝三种颜色的不同光强的组合来显示五颜六色的图像。 Colorful image is displayed by a combination of different light intensity three colors red, green and blue.

[0003] 近年来随着液晶显示器尺寸的不断增大,驱动电路的频率不断提高,现有的非晶硅薄膜晶体管迀移率很难满足要求。 [0003] In recent years, with the increasing size of liquid crystal display, the frequency of the driving circuit continues to increase, the conventional amorphous silicon thin film transistor Gan shift rate is difficult to meet the requirements. 高迀移率的薄膜晶体管有多晶硅薄膜晶体管和金属氧化物薄膜晶体管,其中多晶硅薄膜晶体管虽然研究较早,但是其均一性差,制作工艺复杂;金属氧化物薄膜晶体管相比于多晶硅薄膜晶体管的优点在于:氧化物材料的迀移率高。 The thin film transistor of the high shift Gan polysilicon thin film transistor and a metal oxide thin film transistor, wherein the polysilicon thin film transistor, although early studies, but the poor uniformity, complex manufacturing process; metal oxide thin film transistor as compared to the advantages of the polysilicon thin film transistor is characterized in : Gan high shift oxide material. 所以不需要采用晶化技术,节省工艺步骤,提高了均匀率和合格率;工艺简单,采用传统的溅射和湿刻工艺就可以,不需要采用等离子增强化学气相沉积和干刻技术。 Therefore, crystallization techniques need not be employed, saving process steps, improve the uniformity and yield rate; simple process, using conventional sputtering, and a wet etching process can not required by plasma enhanced chemical vapor deposition and dry etching techniques. 另外,目前的激光晶化技术还达不到大尺寸面板的要求,而氧化物晶体管因为不需要激光晶化,则没有尺寸的限制。 Further, the present laser crystallization technique also meet the requirements for a large-size panel, since no oxide transistor and the laser crystallization, there is no size limitation. 由于这几方面的优势,金属氧化物薄膜晶体管备受人们关注,成为近几年研究的热点。 Because of the advantages of these areas, the metal oxide thin film transistor much attention, become the focus of research in recent years.

发明内容 SUMMARY

[0004] 本发明的目的在于提供一种提高TFT驱动能力和简化工艺的金属氧化物平面开关型液晶显示面板的制造方法。 [0004] The object of the present invention is to provide a metal oxide-plane switching type liquid crystal TFT driving capability for improving and simplifying the process of manufacturing method of a display panel.

[0005] 本发明提供一种金属氧化物平面开关型液晶显示面板的制造方法,包括如下步骤: [0005] The present invention provides a metal oxide-plane switching type liquid crystal display panel manufacturing method, comprising the steps of:

[0006] 第一步:在基板上形成底层金属氧化物层,具体形成:信号线图案、共通电极线图案、扫描线图案、以及与扫描线连接的TFT栅极; [0006] The first step: forming the underlying metal oxide layer on a substrate, specifically form: a signal line pattern, line pattern common electrode, a scanning line pattern, and a TFT gate electrode connected to the scan line;

[0007] 第二步:在形成第一步图案的基础上形成绝缘层,并在信号线、扫描线、共通电极线相应位置上形成接触孔图形; [0007] Step two: forming an insulating layer is formed on the basis of a pattern on the first step, and forming a contact hole pattern in the position corresponding to the signal lines, scanning lines, the common electrode line;

[0008] 第三步:在绝缘层上以金属氧化物形成连接在相邻信号线之间信号线连接线、与信号线连接线连接的源漏极连接线、与源漏极连接线栅格状像素电极、以及通过接触孔与共通电极线连接并与栅格状像素电极交错的栅格状共通电极; [0008] The third step: to form a metal oxide source and drain connected to a signal line cable connection line, the signal line cable is connected between adjacent signal lines on the insulating layer, a source and a drain connected to the grid lines shaped pixel electrode, and is connected through a contact hole line and the common electrode and the pixel electrodes interleaved with the grid-shaped grid-like common electrode;

[0009] 第四步:在源漏极连接线上形成保护层图形,然后利用阳离子注入方式让沟道保护层图形以外的金属氧化物成为具有导体特性的透明电极,并同时形成TFT源极和TFT漏极。 [0009] The fourth step: forming a protective layer connected to the source and drain lines in the pattern, and then let the injection method using a cationic metal oxide other than the channel protective layer having a conductor pattern characteristic of a transparent electrode, and the source of the TFT is formed at the same time and TFT drain.

[0010] 本发明又提供一种金属氧化物平面开关型液晶显示面板的制造方法,包括如下步骤: [0010] The present invention further provides a method for producing metal oxide-plane switching type liquid crystal panel display device, comprising the steps of:

[0011] 第一步:在基板以金属氧化物形成信号线连接线、与信号线连接线连接的源漏极连接线、与源漏极连接线栅格状像素电极、以及与栅格状像素电极交错的栅格状共通电极; [0011] Step 1: a substrate to form a metal oxide line signal line, a source connected to the drain line is connected to the signal line connection lines, a source connected to the drain line and a grid-shaped pixel electrode, and a grid-shaped pixel staggered grid-like electrode common electrode;

[0012] 第二步:在源漏极连接线上形成保护层图形,然后利用阳离子注入方式让沟道保护层图形以外的金属氧化物成为具有导体特性的透明电极,并同时形成TFT源极和TFT漏极; [0012] Step two: forming a protective layer connected to the source and drain lines in the pattern, and then let the injection method using a cationic metal oxide other than the channel protective layer having a conductor pattern characteristic of a transparent electrode, and the source of the TFT is formed at the same time and TFT drain;

[0013] 第三步:在形成第二步图案的基础上形成绝缘层,并在信号线连接线、栅格状共通电极的相应位置上形成接触孔图形; [0013] The third step: forming an insulating layer on the basis of a pattern forming the second step, the signal line and the connecting line, the contact hole grid-like pattern is formed on the respective positions of the common electrode;

[0014] 第四步:在绝缘层上以金属形成信号线、扫描线、共通电极线与TFT栅极的图案。 [0014] The fourth step: a metal on the insulating layer to form the signal lines, scanning lines, TFT gate electrode and the common electrode line pattern.

[0015] 本发明以金属氧化物作为TFT沟道半导体、源漏电极、栅格状像素电极或栅格状共通电极使用,可以提高TFT驱动能力和简化工艺。 [0015] In the present invention, a metal oxide semiconductor as a channel TFT, source and drain electrodes, a grid-like or lattice-like pixel electrode using the common electrode, TFT driving capability can be improved and simplified.

附图说明 BRIEF DESCRIPTION

[0016] 图1为现有液晶显不(IXD)装置的结构不意图; [0016] FIG. 1 is a conventional liquid crystal display is not (IXD) device structure is not intended;

[0017] 图2为本发明液晶显示面板第一实施例的结构示意图; LCD [0017] FIG. 2 embodiment of the present invention shows a schematic view of a first embodiment of the panel;

[0018] 图2A为图1所示液晶显示面板在A-A'方向的剖视图; [0018] In Figure 2A a cross-sectional view of a panel of A-A 'direction of a liquid crystal display shown in Figure 1;

[0019] 图3为图1所不液晶显不面板的第一步制造方法的不意图; [0019] FIG. 3 is a liquid crystal display does not first step of producing not intended panel;

[0020] 图3A为图3所示在A-A'方向的剖视图; [0020] FIG 3A is a cross-sectional view in FIG. 3 A-A 'direction;

[0021] 图4为图1所不液晶显不面板的第一■步制造方法的不意图; [0021] FIG. 4 is not a liquid crystal display panel is not the first manufacturing method is not intended ■ step;

[0022] 图4A为图4所示在A-A'方向的剖视图; [0022] FIG. 4A is a cross-sectional view shown in FIG 4 A-A 'direction;

[0023] 图5为图1所不液晶显不面板的第二步制造方法的不意图; [0023] FIG. 5 is not a liquid crystal display manufacturing method of the second step does not intended to panel;

[0024] 图5A为图5所示在A-A'方向的剖视图; [0024] FIG 5A is a cross-sectional view shown in FIG. 5 A-A 'direction;

[0025] 图6为图1所示液晶显示面板的第四步制造方法的示意图; [0025] FIG. 6 is a schematic view of a manufacturing method of the fourth step the liquid crystal panel 1 shown in FIG display;

[0026] 图6A为图6所示在A-A'方向的剖视图; [0026] FIG 6A is a cross-sectional view shown in FIG. 6 A-A 'direction;

[0027] 图7为本发明液晶显示面板第二实施例的结构示意图; [0027] Figure 7 a schematic view of the structure of a second embodiment of the panel of the liquid crystal display of the present invention;

[0028] 图7A为图7所示液晶显示面板在A-A'方向的剖视图; [0028] In FIG. 7A a cross-sectional view of a panel of A-A 'direction of a liquid crystal display of Figure 7;

[0029] 图8为图7所不液晶显不面板的第一步制造方法的不意图; [0029] FIG. 8 is not intended to be the first step in the manufacturing method of FIG. 7 does not LCD panel;

[0030] 图8A为图8所示在A-A'方向的剖视图; [0030] FIG. 8A is a cross-sectional view shown in FIG. 8 A-A 'direction;

[0031] 图9为图7所不液晶显不面板的第一■步制造方法的不意图; [0031] FIG. 9 is a liquid crystal display of FIG. 7 does not ■ a first panel manufacturing method is not intended to step;

[0032] 图9A为图9所示在A-A'方向的剖视图; [0032] FIG 9A is a cross-sectional view shown in FIG. 9 A-A 'direction;

[0033] 图10为图7所不液晶显不面板的第二步制造方法的不意图; [0033] FIG. 10 is a liquid crystal display of FIG. 7 does not not intended second step of the method for manufacturing the panel;

[0034] 图10A为图10所示在A-A'方向的剖视图; [0034] FIG 10A is a cross-sectional view of FIG. 10 in A-A 'direction;

[0035] 图11为图7所示液晶显示面板的第四步制造方法的示意图; [0035] FIG. 11 is a schematic view of a manufacturing method of the liquid crystal panel of the fourth step shown in FIG. 7 display;

[0036] 图11A为图11所示在A-A'方向的剖视图。 [0036] FIG 11A is a cross-sectional view shown in FIG. 11 A-A 'direction.

具体实施方式 Detailed ways

[0037] 下面结合附图和具体实施例,进一步阐明本发明,应理解这些实施例仅用于说明本发明而不用于限制本发明的范围,在阅读了本发明之后,本领域技术人员对本发明的各种等价形式的修改均落于本申请所附权利要求所限定的范围。 [0037] conjunction with the accompanying drawings and the following specific examples further illustrate the invention, it should be understood that these embodiments are illustrative only and the present invention is not intended to limit the scope of the present invention, after reading this disclosure, those skilled in the art of the present invention various modifications are equivalents fall within the present application as defined in the appended claims scope.

[0038] 本发明是一种金属氧化物平面开关型液晶显示面板,平面开关型IPS(In-PlaneSwitching)的两极都在同一个面上,使得液晶分子在平面内转动的的技术。 [0038] The present invention is a metal oxide-plane switching type liquid crystal display panel, in-plane switching type IPS (In-PlaneSwitching) poles are in the same plane, so that the technology of the liquid crystal molecules rotate in a plane.

[0039] 图2至图6A是本发明第一实施例的示意图。 [0039] FIG. 2 through FIG. 6A is a schematic of a first embodiment of the present invention.

[0040] 如图2和图2A,本发明金属氧化物平面开关型液晶显示面板包括:信号线10、与信号线10纵横交错的扫描线30、由信号线10和扫描线30交叉限定的多个像素单元、与扫描线30平行的共通电极线20、与共通电极线20连接的栅格状共通电极80、绝缘层40。 [0040] Figures 2 and 2A, the metal oxide plane switching type liquid crystal display panel of the present invention comprises: a signal line 10, scanning lines 30 and signal lines 10 criss-cross, the signal line 10 and the scanning lines 30 intersecting a plurality defined pixel units, grid-like common electrode line is parallel to the scanning line 3020, and the common electrode line 20 is connected to the common electrode 80, the insulating layer 40.

[0041] 其中,信号线10、扫描线30、共通电极线20位于液晶显示面板的底层,所述栅格状共通电极80位于液晶显示面板的顶层。 [0041] wherein, the signal line 10, scanning lines 30, the common electrode line 20 is positioned underlying the liquid crystal display panel, the grid-like common electrode 80 is located in the liquid crystal display panel of the top layer.

[0042] 每个像素单元包括:薄膜晶体管单元、与薄膜晶体管单元连接的栅格状像素电极70 ο [0042] Each pixel cell comprising: a thin film transistor unit, a grid-shaped thin film transistor connected to the pixel element electrode 70 ο

[0043] 其中,薄膜晶体管单元包括:与扫描线30连接的TFT栅极31、与信号线10电性连接的TFT源极61、与栅格状像素电极70电性连接的TFT漏极62,所述TFT源极61与TFT漏极62之间设有TFT沟道区60,在TFT沟道区内上设有保护层110。 [0043] wherein the thin film transistor units comprising: a TFT gate electrode 31, 10 is electrically connected to the signal line and the TFT source electrode connected to the scan line 61 is 30, TFT drain electrode 70 is electrically connected to the grid-shaped pixel electrode 62, the source of the TFT 61 is provided between the TFT 62 and the drain of the TFT channel region 60, a protective layer 110 on the TFT channel region.

[0044] 所述TFT源极61、TFT漏极62、栅格状像素电极70、以及栅格状共通电极80均由金属氧化物上通过阳离子注入方式成为具有导体特性的透明电极,且TFT源极61、TFT漏极62、以及栅格状像素电极70均位于本液晶显示面板的顶层。 [0044] 61 is the source of the TFT, TFT drain electrode 62, the grid-shaped pixel electrodes 70, 80 by a metal oxide and a lattice electrode having a transparent common electrode conductor cationic properties by way of injection, and the source of the TFT electrode 61, TFT drain electrode 62, and a grid-shaped pixel electrodes 70 are located on top of this liquid crystal display panel.

[0045] 所述栅格状像素电极70与栅格状共通电极80同时形成,该栅格状共通电极80为本液晶显示面板的COM电极,且位于顶层的栅格状共通电极80与同层的栅格状像素电极70在像素区域交错设置,栅格状共通电极80与栅格状像素电极70位于同一个面内,使得液晶分子在平面内转动。 [0045] The grid-shaped pixel electrode 70 and the grid-shaped common electrode 80 are formed simultaneously, the grid-shaped electrode 80 common electrodes COM-based liquid crystal display panel, and a grid-like common electrode 80 is located in the same layer as the top layer the staggered grid-like pixel electrodes disposed in the pixel region 70, the common electrode 80 and the lattice-shaped grid-shaped pixel electrode 70 lies in the same plane, so that the liquid crystal molecules rotate in a plane.

[0046] 所述信号线10包括第一信号线、相邻像素单元的第二信号线和位于第一信号线和第二信号线之间的信号线连接线50,该信号线连接线50与栅格状共通电极80、栅格状像素电极70、TFT源极61、以及TFT漏极62五者同时制成,该五者都是均由金属氧化物上通过阳离子注入方式成为具有导体特性的透明电极。 [0046] The signal line 10 includes a signal line connecting line between the first signal line, second signal line adjacent to the pixel unit and a first signal line and second signal line 50, the signal line is connected to the line 50 a grid-like common electrode 80, grid-shaped pixel electrode 70, TFT source electrode 61, drain electrode 62 and a TFT are simultaneously formed by five, five of the person on the metal oxide is by way of injection through a cation having a conductor characteristics become a transparent electrode.

[0047] 由于本液晶显示面板的栅极31位于底层,故,本液晶显示面板是底栅结构的液晶显示面板。 [0047] Since the liquid crystal display panel 31 is located at the bottom of the gate, therefore, the present liquid crystal display panel is a liquid crystal display panel, a bottom-gate structure.

[0048] 本发明液晶显示面板的制造步骤如下: [0048] The present invention is a liquid crystal display panel manufacturing steps are as follows:

[0049] 第一步:如图3和图3A,在玻璃基板(图未示)上形成底层金属氧化物层,具体形成:信号线10图案、共通电极线20图案、扫描线30图案、以及与扫描线30垂直连接的TFT栅极31。 [0049] Step: 3 and 3A, the bottom metal oxide layer is formed on a glass substrate (not shown), the specific form: the signal line pattern 10, the common electrode wiring pattern 20, pattern 30 scanning lines, and TFT gate connected to the scanning line 31 of the vertical.

[0050] 所述共通电极线20与扫描线30平行,所述信号线10与相邻像素单元的信号线之间是断开的,所述共通电极线20与扫描线30位于相邻两信号线10之间。 [0050] The common electrode lines 20 and the scanning lines 30 in parallel between the signal line 10 and the signal line adjacent to the pixel units are turned off, the common electrode lines 20 and the scanning line 30 located between two adjacent signal between the line 10.

[0051] 所述金属材料是Cr、或A1、或Cu,厚度为3500-4500埃,最好为4000埃。 [0051] The metallic material is Cr, or A1, or Cu, with a thickness of 3500-4500 angstroms, preferably 4000 angstroms.

[0052] 第二步:如图4和图4A,在形成第一步图案的基础上形成绝缘层40,并在信号线10、扫描线30、共通电极线20相应位置上形成接触孔图形,具体为:在信号线10两端形成第一接触孔41和第二接触孔42 ;在共通电极线20的端部和中间分别形成第三接触孔43和第四接触孔44 ;在扫描线30的端部形成第五接触孔45。 [0052] Step Two: 4 and 4A, an insulating layer 40 is formed on the basis of a pattern on the first step, and forming a contact hole pattern 20 in a position corresponding to the signal line 10, scanning lines 30, the common electrode line, specifically: a first contact hole 41 and the second contact hole 42 is formed at both ends of the signal line 10; the scan line 30; third and fourth contact holes 43 are formed in the contact hole 44 and the end portion of the intermediate common electrode line 20 the fifth contact hole formed in an end portion 45.

[0053] 绝缘层40的材料可以是SiNx或Si02,厚度为500-1500埃,厚度最好为1000埃。 Materials [0053] The insulating layer 40 may be Si02 or SiNx, a thickness of 500 to 1500 angstroms, preferably 1000 angstroms thickness.

[0054] 第三步:如图5和图5A,在绝缘层40上以金属氧化物形成连接在相邻信号线10之间信号线连接线50、与信号线连接线50连接的源漏极连接线60、与源漏极连接线60栅格状像素电极70、以及与栅格状像素电极交错的栅格状共通电极80。 [0054] Third Step: 5 and 5A, a metal oxide to form a source connected to the drain signal line 10 is connected between the line adjacent to the signal line 50, a signal line connected to the connection line 50 on the insulating layer 40 connecting line 60, a source connected to the drain line 60 and a grid-shaped pixel electrode 70 and the common electrode 80 and a lattice grid-shaped pixel electrodes interleaved.

[0055] 所述源漏极连接线60为TFT沟道区;所述栅格状像素电极70与栅格状共通电极80交叉排列在绝缘层40上,且所述栅格状共通电极80通过第四接触孔44将栅格状共通电极80与共通电极线20电性连接;金属氧化物通过共通电极线20的第三接触孔43引出共通电极线端子信号线90 ;金属氧化物通过扫描线30的第五接触孔45引出扫描线端子信号线100。 [0055] The source line 60 is connected to the drain of the TFT channel region; the grid-shaped pixel electrode 70 and the common electrode 80 intersect a grid-like arranged on the insulating layer 40, and the common electrode 80 through the grid-like 44 the fourth contact hole grid-like common electrode 80 is electrically connected to the common electrode line 20; a metal oxide by the common electrode lines 20 of the third contact hole 43 lead wire terminal of the common electrode signal line 90; a metal oxide through the scan line fifth contact hole 30 of the terminal 45 led out signal line 100 scanning lines.

[0056] 金属氧化物的材料是ΙΖ0或IGZ0,厚度为450-550埃,最好为500埃。 Materials [0056] The metal oxides are ΙΖ0 or IGZ0, a thickness of 450-550 Angstroms, preferably 500 Angstroms.

[0057] 第四步:如图6和图6A,在源漏极连接线60上形成保护层110图形,然后利用阳离子注入方式让沟道保护层110图形以外的金属氧化物成为具有导体特性的透明电极,并同时形成TFT源极61和TFT漏极62。 [0057] Step IV: 6 and 6A, the protective layer pattern 110 is formed on the source connected to the drain line 60, and then injected by cation way to make metal oxide other than the pattern 110 to become the channel protective layer having a conductor properties a transparent electrode, and source electrode 61 are formed simultaneously TFT 62 and the TFT drain electrode.

[0058] 保护层110图形的材料是SiNx或Si02,厚度为500-1500 ±矣,最好为1000埃。 [0058] The protective material 110 is patterned layer of Si02 or SiNx, a thickness of 500-1500 ± men, preferably 1000 angstroms.

[0059] 图7至图11A是本发明第二实施例的示意图。 [0059] FIG. 11A through FIG. 7 is a schematic view of a second embodiment of the present invention.

[0060] 本发明的第二实施例与上述第一实施例主要区别是:第一实施例为底栅结构的液晶显示面板,栅格状共通电极80与栅格状像素电极70均位于顶层;第二实施例为顶栅结构的液晶显示面板,栅格状共通电极80'与栅格状像素电极70'均位于底层。 [0060] The second embodiment of the present invention and the above-described first embodiment, the main difference is: a first embodiment of a liquid crystal display panel is a bottom-gate structure, grid-like common electrode 80 and the grid-shaped pixel electrodes 70 are located on the top floor; the second embodiment of the liquid crystal display panel is a top-gate structure, 80 'of the grid-shaped pixel electrode 70' are located in a grid-like bottom common electrode.

[0061] 如图7和图7A,本发明金属氧化物平面开关型液晶显示面板包括:信号线10'、与信号线10'纵横交错的扫描线30'、由信号线10'和扫描线30'交叉限定的多个像素单元、与扫描线30'平行的共通电极线20'、与共通电极线20'连接的栅格状共通电极80'、绝缘层40'。 [0061] FIGS. 7 and 7A, the metal oxide of the present invention, in-plane switching type liquid crystal display panel comprising: a signal line 10 ', the signal line 10' criss-cross the scan line 30 ', the signal line 10' and the scanning lines 30 'cross section defined by a plurality of pixels, the scanning line 30' parallel to the common electrode lines 20 ', and the common electrode lines 20' connected to a grid-shaped common electrode 80 ', the insulating layer 40'.

[0062] 其中,信号线10'、扫描线30'、共通电极线20'位于液晶显示面板的顶层,所述栅格状共通电极80'位于液晶显示面板的底层。 [0062] wherein, the signal lines 10 ', the scanning line 30', common electrode lines 20 'located in the liquid crystal display panel of the top layer, the grid-like common electrode 80' is located in the bottom of the liquid crystal display panel.

[0063] 每个像素单元包括:薄膜晶体管单元、与薄膜晶体管单元连接的栅格状像素电极70,。 [0063] Each pixel cell comprising: a thin film transistor unit, a grid-shaped pixel electrode connected to the thin film transistor unit 70 ,.

[0064] 其中,薄膜晶体管单元包括:与扫描线30'连接的TFT栅极31'、与信号线10'电性连接的TFT源极61'、与栅格状像素电极70'电性连接的TFT漏极62',所述TFT源极61'与TFT漏极62'之间设有TFT沟道区60',在TFT沟道区内上设有保护层110'。 [0064] wherein the thin film transistor unit comprises: a scan line 30 'is connected the gate of a TFT 31', the signal line 10 'is electrically connected to the TFT source electrode 61' 'is electrically connected to the pixel electrode 70 is a grid-like TFT drain electrode 62 ', the source of the TFT 61' 'is provided between the TFT channel region 60' and the TFT drain electrode 62, a protective layer on the TFT channel region 110 '.

[0065] 所述TFT源极61'、TFT漏极62 '、栅格状像素电极70 '、以及栅格状共通电极80 '均由金属氧化物上通过阳离子注入方式成为具有导体特性的透明电极,且TFT源极61'、TFT漏极62'、以及栅格状像素电极70'均位于本液晶显示面板的底层。 [0065] The source of the TFT 61 is ', TFT drain electrode 62', the grid-shaped pixel electrode 70 ', and a grid-like common electrode 80' by the injection method by a cationic metal oxide electrode having a transparent conductor properties , ', TFT drain electrode 62', and a grid-shaped pixel electrode 70 'are located at the bottom of this liquid crystal display panel 61 and the source of the TFT.

[0066] 所述栅格状像素电极70'与栅格状共通电极80'同时形成,该栅格状共通电极80'为本液晶显示面板的COM电极,且位于底层的栅格状共通电极80'与同层的栅格状像素电极70'在像素区域交错设置,栅格状共通电极80'与栅格状像素电极70'位于同一个面内,使得液晶分子在平面内转动。 [0066] The grid-shaped pixel electrode 70 'and the grid-shaped common electrode 80' are formed simultaneously, the grid-shaped common electrode 80 'of the present COM electrode of the liquid crystal display panel, and located in the bottom of the grid-shaped common electrode 80 'with the grid-shaped pixel electrode layer 70' alternately arranged in the pixel region, 80 'of the grid-shaped pixel electrode 70' a grid-like common electrode located within the same plane, so that the liquid crystal molecules rotate in a plane.

[0067] 所述信号线10'包括第一信号线、相邻像素单元的第二信号线和位于第一信号线和第二信号线之间的信号线连接线50',该信号线连接线50'与栅格状共通电极80'、栅格状像素电极70'、TFT源极61'、以及TFT漏极62'五者同时制成,该五者都是均由金属氧化物上通过阳离子注入方式成为具有导体特性的透明电极。 [0067] The signal line 10 'includes a signal line between the first signal line, second signal line adjacent to the pixel unit and a first signal line and second signal line connection lines 50', the signal line cable 50 'with the grid-shaped common electrode 80', the grid-shaped pixel electrodes 70 ', TFT source electrode 61', and a TFT drain electrode 62 'made of five persons simultaneously, by the five persons on the metal oxide are passed through a cation injecting a transparent electrode having a conductive manner characteristic.

[0068] 由于本液晶显示面板的栅极31'位于底层,故,本液晶显示面板是顶栅结构的液晶显示面板。 [0068] Since the gate of the liquid crystal display panel 31 'on the ground floor, so, the present liquid crystal display panel is a liquid crystal display panel, a top-gate structure.

[0069] 以下为本发明液晶显示面板第二实施例的制造步骤如下: LCD [0069] The following steps of the present invention for producing a display panel of the second embodiment is as follows:

[0070] 第一步:如图8和图8A,在玻璃基板(图未示)以金属氧化物形成信号线连接线50'、与信号线连接线50'连接的源漏极连接线60'、与源漏极连接线60'栅格状像素电极70'、以及与栅格状像素电极交错的栅格状共通电极80'。 [0070] Step: 8 and 8A, a glass substrate (not shown) to form a metal oxide cable signal line 50 ', the signal line connected to line 50' connected to a source connected to the drain line 60 ' , a drain connected to the source line 60 'grid-shaped pixel electrode 70', and a lattice grid-shaped pixel electrode and the common electrode 80 interleaved '.

[0071] 所述源漏极连接线60'为TFT沟道区;所述栅格状像素电极70'与栅格状共通电极80'交叉排列。 [0071] The drain source connection line 60 'to the TFT channel region; the grid-shaped pixel electrode 70' 80 'are arranged with a grid-like cross the common electrode.

[0072] 金属氧化物的材料是ΙΖ0或IGZ0,厚度为450-550埃,最好为500埃。 Materials [0072] The metal oxides are ΙΖ0 or IGZ0, a thickness of 450-550 Angstroms, preferably 500 Angstroms.

[0073] 第二步:如图9和图9A,在源漏极连接线60'上形成保护层110'图形,然后利用阳离子注入方式让沟道保护层110'图形以外的金属氧化物成为具有导体特性的透明电极,并同时形成TFT源极61'和TFT漏极62'。 [0073] Step: FIGS. 9A and FIG. 9, 'the protective layer 110 is formed on the' pattern of the source connected to the drain line 60, and then injected by cation embodiment allows the channel protective layer 110 'of the metal oxide other than having the graphics become the transparent conductive electrode characteristics while forming TFT source electrode 61 and the TFT drain electrode 62 '.

[0074] 保护层110'图形的材料是SiNx或Si02,厚度为500-1500埃,最好为1000埃。 Pattern [0074] The protective layer 110 'material is Si02 or SiNx, a thickness of 500 to 1500 angstroms, preferably 1000 angstroms.

[0075] 第三步:如图10和图10A,在形成第二步图案的基础上形成绝缘层40',并在信号线连接线50'、栅格状共通电极80'的相应位置上形成接触孔图形,具体为:信号线连接线50'两端形成第一接触孔41'和第二接触孔42';在栅格状共通电极80'上形成第三接触孔43,。 [0075] Third Step: 10 and 10A, the insulating layer 40 is formed on the basis of a pattern formed on the second stage ', and a signal line connected to line 50' formed in respective positions, a grid-like common electrode 80 'of the a contact hole pattern, in particular: a signal line connected to line 50 'are formed at both ends of the first contact hole 41' and the second contact hole 42 '; in a grid-like common electrode 80' is formed on the third contact hole 43 ,.

[0076] 在缘层40'的材料是SiNx或Si02,厚度为500-1500埃,最好为1000埃。 [0076] In the edge of the material layer 40 'is Si02 or SiNx, a thickness of 500 to 1500 angstroms, preferably 1000 angstroms.

[0077] 第四步:如图11和图11A,在绝缘层40'上以金属形成信号线10'、扫描线30'、共通电极线20'与TFT栅极31'的图案,所述信号线10'通过相邻两信号线连接线50'两端形成第一接触孔41'和第二接触孔42'连接;所述扫描线30'与共通电极线20'平行设于信号线连接线50'上层。 [0077] Step Four: the pattern shown in FIG. 11 and FIG. 11A, 'formed on the metal signal line 10' in the insulating layer 40, the scan line 30 ', the common electrode line 20' and the gate of the TFT 31 ', the signal line 10 'by a line connecting two adjacent signal lines 50' are formed at both ends of the first contact hole 41 'and the second contact hole 42' is connected; the scanning lines 30 'and the common electrode line 20' is provided in parallel to the signal line cable 50 'top.

[0078] 金属的材料是Cr、或A1、或Cu,厚度为3500-4500埃,最好为4000埃。 [0078] The metallic material is Cr, or A1, or Cu, with a thickness of 3500-4500 angstroms, preferably 4000 angstroms.

[0079] 本发明以金属氧化物作为TFT沟道半导体、源漏电极、栅格状像素电极或栅格状共通电极使用,可以提高TFT驱动能力和简化工艺。 [0079] In the present invention, a metal oxide semiconductor as a channel TFT, source and drain electrodes, a grid-like or lattice-like pixel electrode using the common electrode, TFT driving capability can be improved and simplified.

Claims (2)

1.一种金属氧化物平面开关型液晶显示面板的制造方法,其特征在于,包括如下步骤: 第一步:在基板上形成底层金属氧化物层,具体形成:信号线图案、共通电极线图案、扫描线图案、以及与扫描线连接的TFT栅极; 第二步:在形成第一步图案的基础上形成绝缘层,并在信号线、扫描线、共通电极线相应位置上形成接触孔图形; 第三步:在绝缘层上以金属氧化物形成连接在相邻信号线之间信号线连接线、与信号线连接线连接的源漏极连接线、与源漏极连接线栅格状像素电极、以及通过接触孔与共通电极线连接并与栅格状像素电极交错的栅格状共通电极; 第四步:在源漏极连接线上形成保护层图形,然后利用阳离子注入方式让沟道保护层图形以外的金属氧化物成为具有导体特性的透明电极,并同时形成TFT源极和TFT漏极。 1. A manufacturing method of a metal oxide-plane switching type liquid crystal display, characterized by comprising the steps of: a first step of: forming the underlying metal oxide layer on a substrate, specifically form: a signal line pattern, the common electrode line pattern , the scanning line pattern, and a TFT gate electrode connected to the scan line; second step: forming an insulating layer pattern on the basis of the first step is formed, and a contact hole is formed in a pattern corresponding to the position signal lines, scanning lines, the common electrode lines ; the third step: forming a metal oxide insulating layer on a signal line connected to the connecting line between the adjacent signal lines, a source connected to the drain line is connected to the signal line connection lines, a source connected to the drain line and a grid-shaped pixels electrode, and is connected through the contact hole and the common electrode lines and the pixel electrodes interleaved with the grid-shaped grid-like common electrode; fourth step: forming a protective layer connected to the source and drain lines in the pattern, and then allow the channel injection method using a cationic metal oxide other than protective layer conductor pattern having a transparent electrode characteristics while forming TFT source electrode and the TFT drain electrode.
2.—种金属氧化物平面开关型液晶显示面板的制造方法,其特征在于,包括如下步骤:第一步:在基板以金属氧化物形成信号线连接线、与信号线连接线连接的源漏极连接线、与源漏极连接线栅格状像素电极、以及与栅格状像素电极交错的栅格状共通电极;第二步:在源漏极连接线上形成保护层图形,然后利用阳离子注入方式让沟道保护层图形以外的金属氧化物成为具有导体特性的透明电极,并同时形成TFT源极和TFT漏极;第三步:在形成第二步图案的基础上形成绝缘层,并在信号线连接线、栅格状共通电极的相应位置上形成接触孔图形; 第四步:在绝缘层上以金属形成信号线、扫描线、共通电极线与TFT栅极的图案。 2.- A manufacturing method of metal oxide-plane switching type liquid crystal display, characterized by comprising the steps of: first step: a metal oxide to form a cable signal line on the substrate, a drain connected to the source signal line cable connection line, a drain connected to the source line shaped pixel electrode grid, and a grid-like common electrode and the pixel electrode is a grid-like interleaved; Step two: forming a protective layer connected to the source and drain lines in the pattern, and then by cation way to make metal oxide other than injection channel protective layer is a transparent electrode having a conductor pattern characteristics, and simultaneously forming TFT source and drain of the TFT; the third step: forming an insulating base layer formed on the second step of the pattern, and a signal line connected to the line, the contact hole pattern is formed corresponding to a position on the grid-shaped common electrode; fourth step: on the insulating layer to form a metal signal lines, scanning lines, TFT gate electrode and the common electrode line pattern.
CN201210364959.4A 2012-09-26 2012-09-26 A method for manufacturing a panel-type metal oxide plane switching liquid crystal display CN102866553B (en)

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