CN102866553B - A kind of manufacture method of metal oxide planar switch type liquid crystal display panel - Google Patents
A kind of manufacture method of metal oxide planar switch type liquid crystal display panel Download PDFInfo
- Publication number
- CN102866553B CN102866553B CN201210364959.4A CN201210364959A CN102866553B CN 102866553 B CN102866553 B CN 102866553B CN 201210364959 A CN201210364959 A CN 201210364959A CN 102866553 B CN102866553 B CN 102866553B
- Authority
- CN
- China
- Prior art keywords
- lattice
- electrode
- tft
- common electrode
- metal oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The invention provides a kind of metal oxide planar switch type liquid crystal display panel, comprising: sweep trace; Signal wire, intersect in length and breadth with sweep trace, pixel cell, intersected by sweep trace and signal wire and limit, described each pixel cell comprises thin film transistor (TFT) and pixel electrode, and described thin film transistor (TFT) comprises the TFT grid be electrically connected with sweep trace, the TFT source electrode be electrically connected with signal line linking line and the TFT that is connected with lattice-shaped pixel electrode drains; Common electrode wire, be arranged in parallel with sweep trace; Lattice-shaped common electrode, is electrically connected with common electrode wire; This lattice-shaped common electrode and grid pixel electrode are all staggered is positioned at pixel region, and described lattice-shaped common electrode and grid pixel electrode are positioned at same layer.The present invention using metal oxide as TFT channel semiconductor, source-drain electrode, lattice-shaped pixel electrode or lattice-shaped common electrode use, TFT driving force and Simplified flowsheet can be improved.
Description
Technical field
The present invention relates to a kind of manufacture method of metal oxide planar switch type liquid crystal display panel.
Background technology
Traditional CRT monitor relies on the phosphor powder that cathode-ray tube (CRT) electron emission clashes on screen to show image, but the principle of liquid crystal display is then completely different.Usually, liquid crystal display (LCD) device has upper substrate and infrabasal plate, has certain intervals each other and faces mutually.The multiple electrodes be formed on two substrates are facing each other.Liquid crystal is clipped between upper substrate and infrabasal plate.Voltage is applied on liquid crystal by the electrode on substrate, then changes the arrangement of liquid crystal molecule according to acted on voltage thus display image, because liquid crystal indicator described above not utilizing emitted light, it needs light source to show image.Therefore, liquid crystal indicator has and is positioned at liquid crystal panel backlight below.Control the light quantity from backlight incidence according to the arrangement of liquid crystal molecule thus show image.As shown in Figure 1, accompany color membrane substrates 104, common electrode 105, liquid crystal layer 106 and array base palte 107 between upper strata polaroid 101 and lower floor's polaroid 109, liquid crystal molecule is the material with refractive index and dielectric constant anisotropy.Array base palte 107 is formed pixel electrode 108, thin film transistor (TFT) (TFT) 114, array sub-pixel 111, sweep trace 110, signal wire 112 etc.Signal wire 112 is connected to the drain electrode of TFT, and pixel electrode 108 is connected to source class, and sweep trace 110 is connected to grid.The light that backlight 113 sends, through lower polaroid 109, becomes the polarized light with certain polarization direction.Thin film transistor (TFT) 114 controls institute's making alive between pixel electrode 108, and this voltage acts on liquid crystal to control the polarization direction of polarized light, polarized light forms monochromatic polarized light through after corresponding color film 102, if polarized light can penetrate upper strata polaroid 101, then demonstrates corresponding color; Electric field intensity is different, and the deflection angle of liquid crystal molecule is also different, through light intensity different, the brightness of display is also different.Motley image is shown by the combination of the different light intensity of RGB three kinds of colors.
In recent years along with the continuous increase of display size, the frequency of driving circuit improves constantly, and existing amorphous silicon film transistor mobility is difficult to meet the demands.The thin film transistor (TFT) of high mobility has polycrystalline SiTFT and metal oxide thin-film transistor, although wherein polycrystalline SiTFT is studied comparatively early, its homogeneity is poor, complex manufacturing technology; Metal oxide thin-film transistor is compared to the advantage of polycrystalline SiTFT: the mobility of oxide material is high.So do not need to adopt crystallization technology, save processing step, improve evening ratio and qualification rate; Technique is simple, adopt traditional sputtering and wet-etching technique just passable, do not need to adopt plasma reinforced chemical vapour deposition and dry lithography.In addition, current laser crystallization technology does not also reach the requirement of large size panel, and oxide transistor is not because need laser crystallization, then do not have the restriction of size.Due to the advantage of these several respects, metal oxide thin-film transistor enjoys people to pay close attention to, and becomes the focus studied in recent years.
Summary of the invention
The object of the present invention is to provide a kind of manufacture method improving the metal oxide planar switch type liquid crystal display panel of TFT driving force and Simplified flowsheet.
The invention provides a kind of manufacture method of metal oxide planar switch type liquid crystal display panel, comprise the steps:
The first step: form underlying metal oxide skin(coating) on substrate, is specifically formed: signal wire pattern, common electrode line pattern, scan line pattern and the TFT grid be connected with sweep trace;
Second step: form insulation course on the basis forming first step pattern, and in signal wire, sweep trace, common electrode wire, relevant position forms contact hole graph;
3rd step: formed with metal oxide on the insulating layer and be connected to signal line linking line between adjacent signals line, the source-drain electrode connecting line be connected with signal line linking line, be connected and the lattice-shaped common electrode staggered with lattice-shaped pixel electrode with common electrode wire with source-drain electrode connecting line lattice-shaped pixel electrode and by contact hole;
4th step: form protective seam figure on source-drain electrode connecting line, then utilizes kation injection mode to allow the metal oxide beyond channel protective layer figure become the transparency electrode with conductor characteristics, and forms TFT source electrode and TFT drain electrode simultaneously.
The present invention provides again a kind of manufacture method of metal oxide planar switch type liquid crystal display panel, comprises the steps:
The first step: substrate with metal oxide formed signal line linking line, the source-drain electrode connecting line be connected with signal line linking line, with source-drain electrode connecting line lattice-shaped pixel electrode and the lattice-shaped common electrode staggered with lattice-shaped pixel electrode;
Second step: form protective seam figure on source-drain electrode connecting line, then utilizes kation injection mode to allow the metal oxide beyond channel protective layer figure become the transparency electrode with conductor characteristics, and forms TFT source electrode and TFT drain electrode simultaneously;
3rd step: form insulation course on the basis forming second step pattern, and form contact hole graph on the relevant position of signal line linking line, lattice-shaped common electrode;
4th step: the pattern forming signal wire, sweep trace, common electrode wire and TFT grid on the insulating layer with metal.
The present invention using metal oxide as TFT channel semiconductor, source-drain electrode, lattice-shaped pixel electrode or lattice-shaped common electrode use, TFT driving force and Simplified flowsheet can be improved.
Accompanying drawing explanation
Fig. 1 is the structural representation of available liquid crystal display (LCD) device;
Fig. 2 is the structural representation of display panels first embodiment of the present invention;
Fig. 2 A is for display panels shown in Fig. 1 is at the cut-open view in A-A ' direction;
The schematic diagram of the first step manufacture method that Fig. 3 is display panels shown in Fig. 1;
Fig. 3 A is shown in by Fig. 3 the cut-open view in A-A ' direction;
The schematic diagram of the second step manufacture method that Fig. 4 is display panels shown in Fig. 1;
Fig. 4 A is shown in by Fig. 4 the cut-open view in A-A ' direction;
The schematic diagram of the 3rd one-step preparation method that Fig. 5 is display panels shown in Fig. 1;
Fig. 5 A is shown in by Fig. 5 the cut-open view in A-A ' direction;
The schematic diagram of the 4th one-step preparation method that Fig. 6 is display panels shown in Fig. 1;
Fig. 6 A is shown in by Fig. 6 the cut-open view in A-A ' direction;
Fig. 7 is the structural representation of display panels second embodiment of the present invention;
Fig. 7 A is for display panels shown in Fig. 7 is at the cut-open view in A-A ' direction;
The schematic diagram of the first step manufacture method that Fig. 8 is display panels shown in Fig. 7;
Fig. 8 A is shown in by Fig. 8 the cut-open view in A-A ' direction;
The schematic diagram of the second step manufacture method that Fig. 9 is display panels shown in Fig. 7;
Fig. 9 A is shown in by Fig. 9 the cut-open view in A-A ' direction;
The schematic diagram of the 3rd one-step preparation method that Figure 10 is display panels shown in Fig. 7;
Figure 10 A is shown in by Figure 10 the cut-open view in A-A ' direction;
The schematic diagram of the 4th one-step preparation method that Figure 11 is display panels shown in Fig. 7;
Figure 11 A is shown in by Figure 11 the cut-open view in A-A ' direction.
Embodiment
Below in conjunction with the drawings and specific embodiments, illustrate the present invention further, these embodiments should be understood only be not used in for illustration of the present invention and limit the scope of the invention, after having read the present invention, the amendment of those skilled in the art to the various equivalent form of value of the present invention has all fallen within the application's claims limited range.
The present invention is a kind of metal oxide planar switch type liquid crystal display panel, the two poles of the earth of planar switch type IPS (In-PlaneSwitching) all on the same face, liquid crystal molecule is planar rotated technology.
Fig. 2 to Fig. 6 A is the schematic diagram of first embodiment of the invention.
As Fig. 2 and Fig. 2 A, metal oxide planar switch type liquid crystal display panel of the present invention comprises: signal wire 10, the sweep trace 30 crisscross with signal wire 10, to be intersected the multiple pixel cells limited, the common electrode wire 20 parallel with sweep trace 30, the lattice-shaped common electrode 80 be connected with common electrode wire 20, insulation course 40 by signal wire 10 and sweep trace 30.
Wherein, signal wire 10, sweep trace 30, common electrode wire 20 are positioned at the bottom of display panels, and described lattice-shaped common electrode 80 is positioned at the top layer of display panels.
Each pixel cell comprises: film crystal pipe unit, the lattice-shaped pixel electrode 70 be connected with film crystal pipe unit.
Wherein, film crystal pipe unit comprises: the TFT grid 31 be connected with sweep trace 30, the TFT source electrode 61 is electrically connected with signal wire 10, and the TFT that is electrically connected of lattice-shaped pixel electrode 70 drain 62; described TFT source electrode 61 and TFT drain between 62 and are provided with TFT channel region 60, are provided with protective seam 110 in TFT channel region.
Described TFT source electrode 61, TFT drain electrode 62, lattice-shaped pixel electrode 70 and lattice-shaped common electrode 80 are by metal oxide being become the transparency electrode with conductor characteristics by kation injection mode, and TFT source electrode 61, TFT drain electrode 62 and lattice-shaped pixel electrode 70 are all positioned at the top layer of this display panels.
Described lattice-shaped pixel electrode 70 is formed with lattice-shaped common electrode 80 simultaneously, this lattice-shaped common electrode 80 is the COM electrode of this display panels, and the lattice-shaped common electrode 80 being positioned at top layer is crisscross arranged at pixel region with the lattice-shaped pixel electrode 70 with layer, lattice-shaped common electrode 80 and lattice-shaped pixel electrode 70 are positioned at same, and liquid crystal molecule is planar rotated.
Described signal wire 10 comprises the first signal wire, the secondary signal line of adjacent pixel unit and the signal line linking line 50 between the first signal wire and secondary signal line, this signal line linking line 50 and lattice-shaped common electrode 80, lattice-shaped pixel electrode 70, TFT source electrode 61 and TFT drain and 62 5 to make simultaneously, and this is all by metal oxide being become the transparency electrode with conductor characteristics by kation injection mode.
Because the grid 31 of this display panels is positioned at bottom, therefore this display panels is the display panels of bottom grating structure.
The manufacturing step of display panels of the present invention is as follows:
The first step: as Fig. 3 and Fig. 3 A, glass substrate (not shown) is formed underlying metal oxide skin(coating), is specifically formed: signal wire 10 pattern, common electrode wire 20 pattern, sweep trace 30 pattern and TFT grid 31 connected vertically with sweep trace 30.
Described common electrode wire 20 is parallel with sweep trace 30, is disconnect between described signal wire 10 and the signal wire of adjacent pixel unit, and described common electrode wire 20 and sweep trace 30 are between adjacent two signal wires 10.
Described metal material is Cr or Al or Cu, and thickness is 3500-4500 dust, is preferably 4000 dusts.
Second step: as Fig. 4 and Fig. 4 A, the basis forming first step pattern forms insulation course 40, and in signal wire 10, sweep trace 30, common electrode wire 20, relevant position forms contact hole graph, be specially: form the first contact hole 41 and the second contact hole 42 at signal wire 10 two ends; The 3rd contact hole 43 and the 4th contact hole 44 is formed respectively in the end of common electrode wire 20 and centre; The 5th contact hole 45 is formed in the end of sweep trace 30.
The material of insulation course 40 can be SiNx or SiO
2, thickness is 500-1500 dust, and thickness is preferably 1000 dusts.
3rd step: as Fig. 5 and Fig. 5 A, on insulation course 40 with metal oxide formed be connected to signal line linking line 50 between adjacent signals line 10, the source-drain electrode connecting line 60 is connected with signal line linking line 50, and source-drain electrode connecting line 60 lattice-shaped pixel electrode 70 and with lattice-shaped pixel electrode interlock lattice-shaped common electrode 80.
Described source-drain electrode connecting line 60 is TFT channel region; Described lattice-shaped pixel electrode 70 and lattice-shaped common electrode 80 cross arrangement are on insulation course 40, and lattice-shaped common electrode 80 and common electrode wire 20 are electrically connected by the 4th contact hole 44 by described lattice-shaped common electrode 80; Metal oxide draws common electrode wire terminal signals line 90 by the 3rd contact hole 43 of common electrode wire 20; Metal oxide draws sweep trace terminal signals line 100 by the 5th contact hole 45 of sweep trace 30.
The material of metal oxide is IZO or IGZO, and thickness is 450-550 dust, is preferably 500 dusts.
4th step: as Fig. 6 and Fig. 6 A; source-drain electrode connecting line 60 is formed protective seam 110 figure; then utilize kation injection mode to allow the metal oxide beyond channel protective layer 110 figure become the transparency electrode with conductor characteristics, and form TFT source electrode 61 and TFT drain electrode 62 simultaneously.
The material of protective seam 110 figure is SiNx or SiO
2, thickness is 500-1500 dust, is preferably 1000 dusts.
Fig. 7 to Figure 11 A is the schematic diagram of second embodiment of the invention.
The second embodiment of the present invention and the above-mentioned first embodiment key distinction are: the first embodiment is the display panels of bottom grating structure, and lattice-shaped common electrode 80 and lattice-shaped pixel electrode 70 are all positioned at top layer; Second embodiment is the display panels of top gate structure, and lattice-shaped common electrode 80 ' and lattice-shaped pixel electrode 70 ' are all positioned at bottom.
As Fig. 7 and Fig. 7 A, metal oxide planar switch type liquid crystal display panel of the present invention comprises: signal wire 10 ', the sweep trace 30 ' crisscross with signal wire 10 ', to be intersected the multiple pixel cells limited, the common electrode wire 20 ' parallel with sweep trace 30 ', the lattice-shaped common electrode 80 ', the insulation course 40 ' that are connected with common electrode wire 20 ' by signal wire 10 ' and sweep trace 30 '.
Wherein, signal wire 10 ', sweep trace 30 ', common electrode wire 20 ' are positioned at the top layer of display panels, and described lattice-shaped common electrode 80 ' is positioned at the bottom of display panels.
Each pixel cell comprises: film crystal pipe unit, the lattice-shaped pixel electrode 70 ' be connected with film crystal pipe unit.
Wherein, film crystal pipe unit comprises: the TFT grid 31 ' be connected with sweep trace 30 ', the TFT source electrode 61 ' be electrically connected with signal wire 10 ', the TFT be electrically connected with lattice-shaped pixel electrode 70 ' drain 62 '; described TFT source electrode 61 ' and TFT drain between 62 ' and are provided with TFT channel region 60 ', are provided with protective seam 110 ' in TFT channel region.
Described TFT source electrode 61 ', TFT drain electrode 62 ', lattice-shaped pixel electrode 70 ' and lattice-shaped common electrode 80 ' are by metal oxide being become the transparency electrode with conductor characteristics by kation injection mode, and TFT source electrode 61 ', TFT drain electrode 62 ' and lattice-shaped pixel electrode 70 ' are all positioned at the bottom of this display panels.
Described lattice-shaped pixel electrode 70 ' is formed with lattice-shaped common electrode 80 ' simultaneously, the COM electrode that this lattice-shaped common electrode 80 ' is this display panels, and the lattice-shaped common electrode 80 ' being positioned at bottom is crisscross arranged at pixel region with the lattice-shaped pixel electrode 70 ' with layer, lattice-shaped common electrode 80 ' and lattice-shaped pixel electrode 70 ' are positioned at same, and liquid crystal molecule is planar rotated.
Described signal wire 10 ' comprises the first signal wire, the secondary signal line of adjacent pixel unit and the signal line linking line 50 ' between the first signal wire and secondary signal line, this signal line linking line 50 ' and lattice-shaped common electrode 80 ', lattice-shaped pixel electrode 70 ', TFT source electrode 61 ' and TFT drain and 62 ' five to make simultaneously, and this is all by metal oxide being become the transparency electrode with conductor characteristics by kation injection mode.
Because the grid 31 ' of this display panels is positioned at bottom, therefore this display panels is the display panels of top gate structure.
Manufacturing step below for display panels second embodiment of the present invention is as follows:
The first step: as Fig. 8 and Fig. 8 A, glass substrate (not shown) with metal oxide formed signal line linking line 50 ', the source-drain electrode connecting line 60 ' be connected with signal line linking line 50 ', with source-drain electrode connecting line 60 ' lattice-shaped pixel electrode 70 ' and with lattice-shaped pixel electrode interlock lattice-shaped common electrode 80 '.
Described source-drain electrode connecting line 60 ' is TFT channel region; Described lattice-shaped pixel electrode 70 ' and lattice-shaped common electrode 80 ' cross arrangement.
The material of metal oxide is IZO or IGZO, and thickness is 450-550 dust, is preferably 500 dusts.
Second step: as Fig. 9 and Fig. 9 A; at source-drain electrode connecting line 60 ' upper formation protective seam 110 ' figure; then utilize kation injection mode to allow the metal oxide beyond channel protective layer 110 ' figure become the transparency electrode with conductor characteristics, and form TFT source electrode 61 ' and TFT drain electrode 62 ' simultaneously.
The material of protective seam 110 ' figure is SiNx or SiO
2, thickness is 500-1500 dust, is preferably 1000 dusts.
3rd step: as Figure 10 and Figure 10 A, the basis forming second step pattern forms insulation course 40 ', and contact hole graph is formed on the relevant position of signal line linking line 50 ', lattice-shaped common electrode 80 ', be specially: signal line linking line 50 ' two ends form the first contact hole 41 ' and the second contact hole 42 '; At upper formation the 3rd contact hole 43 ' of lattice-shaped common electrode 80 '.
SiNx or SiO at the material of edge layer 40 '
2, thickness is 500-1500 dust, is preferably 1000 dusts.
4th step: as Figure 11 and Figure 11 A, insulation course 40 ' is formed with metal the pattern of signal wire 10 ', sweep trace 30 ', common electrode wire 20 ' and TFT grid 31 ', and described signal wire 10 ' forms the first contact hole 41 ' by adjacent two signal line linking line 50 ' two ends and is connected with the second contact hole 42 '; Described sweep trace 30 ' is parallel with common electrode wire 20 ' is located at signal line linking line 50 ' upper strata.
The material of metal is Cr or Al or Cu, and thickness is 3500-4500 dust, is preferably 4000 dusts.
The present invention using metal oxide as TFT channel semiconductor, source-drain electrode, lattice-shaped pixel electrode or lattice-shaped common electrode use, TFT driving force and Simplified flowsheet can be improved.
Claims (2)
1. a manufacture method for metal oxide planar switch type liquid crystal display panel, is characterized in that, comprises the steps:
The first step: form underlying metal oxide skin(coating) on substrate, is specifically formed: signal wire pattern, common electrode line pattern, scan line pattern and the TFT grid be connected with sweep trace;
Second step: form insulation course on the basis forming first step pattern, and in signal wire, sweep trace, common electrode wire, relevant position forms contact hole graph;
3rd step: formed with metal oxide on the insulating layer and be connected to signal line linking line between adjacent signals line, the source-drain electrode connecting line be connected with signal line linking line, be connected and the lattice-shaped common electrode staggered with lattice-shaped pixel electrode with common electrode wire with source-drain electrode connecting line lattice-shaped pixel electrode and by contact hole;
4th step: form protective seam figure on source-drain electrode connecting line, then utilizes kation injection mode to allow the metal oxide beyond channel protective layer figure become the transparency electrode with conductor characteristics, and forms TFT source electrode and TFT drain electrode simultaneously.
2. a manufacture method for metal oxide planar switch type liquid crystal display panel, is characterized in that, comprises the steps:
The first step: substrate with metal oxide formed signal line linking line, the source-drain electrode connecting line be connected with signal line linking line, with source-drain electrode connecting line lattice-shaped pixel electrode and the lattice-shaped common electrode staggered with lattice-shaped pixel electrode;
Second step: form protective seam figure on source-drain electrode connecting line, then utilizes kation injection mode to allow the metal oxide beyond channel protective layer figure become the transparency electrode with conductor characteristics, and forms TFT source electrode and TFT drain electrode simultaneously;
3rd step: form insulation course on the basis forming second step pattern, and form contact hole graph on the relevant position of signal line linking line, lattice-shaped common electrode;
4th step: the pattern forming signal wire, sweep trace, common electrode wire and TFT grid on the insulating layer with metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210364959.4A CN102866553B (en) | 2012-09-26 | 2012-09-26 | A kind of manufacture method of metal oxide planar switch type liquid crystal display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210364959.4A CN102866553B (en) | 2012-09-26 | 2012-09-26 | A kind of manufacture method of metal oxide planar switch type liquid crystal display panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102866553A CN102866553A (en) | 2013-01-09 |
| CN102866553B true CN102866553B (en) | 2016-01-20 |
Family
ID=47445506
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210364959.4A Active CN102866553B (en) | 2012-09-26 | 2012-09-26 | A kind of manufacture method of metal oxide planar switch type liquid crystal display panel |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102866553B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103235455B (en) * | 2013-03-25 | 2015-10-21 | 南京中电熊猫液晶显示科技有限公司 | A kind of display panels and manufacture method thereof |
| CN103337522B (en) * | 2013-06-17 | 2016-06-15 | 南京中电熊猫液晶显示科技有限公司 | A kind of metal oxide thin-film transistor array substrate and manufacture method thereof |
| KR101844284B1 (en) | 2013-10-07 | 2018-04-02 | 엘지디스플레이 주식회사 | Display device and method of fabricating the same |
| CN105158955B (en) * | 2015-10-26 | 2019-02-12 | 天马微电子股份有限公司 | A kind of display panel and preparation method thereof |
| CN106019745A (en) * | 2016-06-21 | 2016-10-12 | 上海纪显电子科技有限公司 | Display device, array substrate and production method of array substrate |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1353329A (en) * | 2000-11-15 | 2002-06-12 | 松下电器产业株式会社 | Thin film transistor array and its manufacturing method and display board using same |
| CN101750821A (en) * | 2008-12-03 | 2010-06-23 | 株式会社半导体能源研究所 | Liquid crystal display device |
| CN102034750A (en) * | 2009-09-25 | 2011-04-27 | 北京京东方光电科技有限公司 | Array substrate and manufacturing method thereof |
| CN102414608A (en) * | 2009-05-29 | 2012-04-11 | 夏普株式会社 | Liquid crystal panel and liquid crystal display device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101661174B (en) * | 2008-08-29 | 2011-04-27 | 群康科技(深圳)有限公司 | Liquid crystal display panel and manufacturing method thereof |
-
2012
- 2012-09-26 CN CN201210364959.4A patent/CN102866553B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1353329A (en) * | 2000-11-15 | 2002-06-12 | 松下电器产业株式会社 | Thin film transistor array and its manufacturing method and display board using same |
| CN101750821A (en) * | 2008-12-03 | 2010-06-23 | 株式会社半导体能源研究所 | Liquid crystal display device |
| CN102414608A (en) * | 2009-05-29 | 2012-04-11 | 夏普株式会社 | Liquid crystal panel and liquid crystal display device |
| CN102034750A (en) * | 2009-09-25 | 2011-04-27 | 北京京东方光电科技有限公司 | Array substrate and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102866553A (en) | 2013-01-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103268878B (en) | The manufacture method of tft array substrate, tft array substrate and display unit | |
| CN203941365U (en) | Array base palte, display panel and display device | |
| CN102929062B (en) | Metal oxide plane switch type liquid crystal display panel and manufacturing method thereof | |
| CN102193231B (en) | Touch sensing type liquid crystal display device and method of fabricating same | |
| CN102566168B (en) | Array substrate, manufacturing method thereof, and liquid crystal display device | |
| CN105629612B (en) | Thin-film transistor array base-plate and preparation method thereof | |
| CN203444218U (en) | Array substrate and display device | |
| CN102866553B (en) | A kind of manufacture method of metal oxide planar switch type liquid crystal display panel | |
| CN103941488A (en) | Fringe-field-switching-type liquid crystal display device, array substrate and manufacturing method of array substrate | |
| WO2017054394A1 (en) | Array substrate and manufacturing method therefor, and display device | |
| CN103309100B (en) | Liquid crystal disply device and its preparation method | |
| CN101430463A (en) | LCD device and method for producing the same | |
| CN103094069B (en) | Pixel structure | |
| TWI481035B (en) | Thin film transistor and array substrate including the same | |
| CN102088025A (en) | Thin film transistor substrate and method of manufacturing the same | |
| CN105161499A (en) | Display substrate, manufacturing method thereof and display device | |
| CN105093750A (en) | TFT array substrate structure and manufacturing method thereof | |
| CN105652543A (en) | Array substrate and manufacturing method thereof and display device | |
| CN102854684B (en) | Metallic oxide fringing field switching mode liquid crystal display panel and manufacture method thereof | |
| CN103762244A (en) | Thin film transistor, manufacturing method of thin film transistor, thin film transistor array substrate and liquid crystal panel | |
| CN103163704B (en) | Dot structure, array base palte and manufacture method thereof | |
| CN102854683B (en) | Metal oxide in-plane switching liquid crystal display panel and manufacturing method thereof | |
| CN102709235B (en) | Array base board as well as manufacturing method and display device thereof | |
| CN103135302B (en) | Thin film transistor-liquid crystal display in mode of plane switch control and manufacturing method thereof | |
| CN102866552B (en) | Metal oxide planar switch type liquid crystal display panel and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |