CN102866553A - Metal-oxide in-plane switching liquid crystal display panel and manufacturing method thereof - Google Patents

Metal-oxide in-plane switching liquid crystal display panel and manufacturing method thereof Download PDF

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Publication number
CN102866553A
CN102866553A CN2012103649594A CN201210364959A CN102866553A CN 102866553 A CN102866553 A CN 102866553A CN 2012103649594 A CN2012103649594 A CN 2012103649594A CN 201210364959 A CN201210364959 A CN 201210364959A CN 102866553 A CN102866553 A CN 102866553A
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electrode
tft
lattice
common electrode
line
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CN2012103649594A
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CN102866553B (en
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焦峰
王海宏
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南京中电熊猫液晶显示科技有限公司
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Abstract

The invention provides a metal-oxide in-plane switching liquid crystal display panel which comprises scanning lines, signal lines, pixel units, common electrode lines and a grid-shaped common electrode. The signal lines and the scanning lines are crossed with one another longitudinally and transversely; the pixel units are defined by the scanning lines and the signal lines in a cross manner, each pixel unit comprises a thin film transistor and pixel electrodes, each thin film transistor comprises a TFT (thin film transistor) grid electrode, a TFT source electrode and a TFT drain electrode, the TFT grid electrodes are electrically connected with the scanning lines, the TFT source electrodes are electrically connected with the signal lines, and the TFT drain electrodes are electrically connected with grid-shaped pixel electrodes; the common electrode lines are parallel to the scanning lines; the grid-shaped common electrode is electrically connected with the common electrode lines; and the grid-shaped common electrode and the grid-shaped pixel electrodes are positioned in a pixel area in a staggered manner and are positioned on the same layer. Metal-oxide is used as TFT channel semiconductors, source electrodes, drain electrodes, the grid-shaped pixel electrodes or the grid-shaped common electrode, so that TFT driving capacity can be improved, and the process can be simplified.

Description

A kind of metal oxide XY switch type display panels and manufacture method thereof

Technical field

The present invention relates to a kind of metal oxide XY switch type display panels and manufacture method thereof.

Background technology

Traditional CRT monitor relies on the phosphor powder on the cathode-ray tube (CRT) electron emission bump screen to show image, but the principle of liquid crystal display is then fully different.Usually, liquid crystal display (LCD) device has upper substrate and infrabasal plate, have each other certain intervals and mutually over against.Be formed on two substrates a plurality of electrodes mutually over against.Liquid crystal is clipped between upper substrate and the infrabasal plate.Voltage is applied on the liquid crystal by the electrode on the substrate, thereby the arrangement that then changes liquid crystal molecule according to the voltage that acts on shows image, because liquid crystal indicator utilizing emitted light not as mentioned above, and it needs light source to show image.Therefore, liquid crystal indicator has the backlight that is positioned at the liquid crystal panel back.Thereby show image according to the arrangement of liquid crystal molecule control from the light quantity of backlight incident.As shown in Figure 1, accompany color membrane substrates 104, common electrode 105, liquid crystal layer 106 and array base palte 107 between upper strata polaroid 101 and the lower floor's polaroid 109, liquid crystal molecule is the material with refractive index and dielectric constant anisotropy.Form pixel electrode 108, thin film transistor (TFT) (TFT) 114, array sub-pixel 111, sweep trace 110, signal wire 112 etc. at array base palte 107.Signal wire 112 is connected to the drain electrode of TFT, and pixel electrode 108 is connected to source class, and sweep trace 110 is connected to grid.The light that backlight 113 sends becomes the polarized light with certain polarization direction through lower polaroid 109.Institute's making alive between the thin film transistor (TFT) 114 control pixel electrodes 108, and this voltage acts on the polarization direction that liquid crystal is controlled polarized light, polarized light sees through the monochromatic polarized light of corresponding color film 102 rear formation, if polarized light can penetrate upper strata polaroid 101, then demonstrates corresponding color; Electric field intensity is different, and the deflection angle of liquid crystal molecule is also different, and the light intensity that sees through is different, and the brightness of demonstration is also different.The combination of the different light intensity by three kinds of colors of RGB shows motley image.

Along with the continuous increase of liquid crystal display size, the frequency of driving circuit improves constantly in recent years, and existing amorphous silicon film transistor mobility is difficult to meet the demands.The thin film transistor (TFT) of high mobility has polycrystalline SiTFT and metal oxide thin-film transistor, although wherein polycrystalline SiTFT is studied early, its homogeneity is poor, complex manufacturing technology; Metal oxide thin-film transistor is than the advantage of polycrystalline SiTFT: the mobility of oxide material is high.So do not need to adopt the crystallization technology, save processing step, improved evening ratio and qualification rate; Technique is simple, adopts traditional sputter and wet-etching technique just passable, does not need to adopt plasma reinforced chemical vapour deposition and dried lithography.In addition, present laser crystallization technology does not also reach the requirement of large size panel, and oxide transistor does not then have the restriction of size because do not need laser crystallization.Because the advantage of these several respects, metal oxide thin-film transistor enjoys people to pay close attention to, and becomes the in recent years focus of research.

Summary of the invention

The object of the present invention is to provide metal oxide XY switch type display panels and the manufacture method thereof of a kind of TFT of raising driving force and simplification technique.

The invention provides a kind of metal oxide XY switch type display panels, comprising: sweep trace; Signal wire intersects in length and breadth with sweep trace; Pixel cell, limited by sweep trace and signal wire intersection, described each pixel cell comprises thin film transistor (TFT) and pixel electrode, and described thin film transistor (TFT) comprises the TFT grid that is electrically connected with sweep trace, the TFT source electrode that is electrically connected with signal line linking line and the TFT that is connected with the lattice-shaped pixel electrode drain; Common electrode wire be arranged in parallel with sweep trace; The lattice-shaped common electrode is electrically connected with common electrode wire; This lattice-shaped common electrode and grid pixel electrode are all staggered to be positioned at pixel region, and described lattice-shaped common electrode and grid pixel electrode are positioned at same layer.

The present invention provides again a kind of manufacture method of metal oxide XY switch type display panels, comprises the steps:

The first step: form the underlying metal oxide skin(coating) at substrate, concrete formation: signal wire pattern, common electrode line pattern, scan line pattern and the TFT grid that is connected with sweep trace;

Second step: form insulation course on the basis that forms first step pattern, and form contact hole graph in signal wire, sweep trace, common electrode wire relevant position;

The 3rd step: on the insulation course with metal oxide form be connected to signal line linking line between the adjacent signals line, the source-drain electrode connecting line that is connected with signal line linking line, with source-drain electrode connecting line lattice-shaped pixel electrode and the lattice-shaped common electrode that is connected with common electrode wire and interlocks with the lattice-shaped pixel electrode by contact hole.

The 4th step: form the protective seam figure at the source-drain electrode connecting line, then utilize the kation injection mode to allow channel protective layer figure metal oxide in addition become the transparency electrode with conductor characteristics, and form simultaneously TFT source electrode and TFT drain electrode.

The present invention provides again a kind of manufacture method of metal oxide XY switch type display panels, comprises the steps:

The first step: substrate with metal oxide form signal line linking line, the source-drain electrode connecting line that is connected with signal line linking line, with source-drain electrode connecting line lattice-shaped pixel electrode and with the staggered lattice-shaped common electrode of lattice-shaped pixel electrode;

Second step: form the protective seam figure at the source-drain electrode connecting line, then utilize the kation injection mode to allow channel protective layer figure metal oxide in addition become the transparency electrode with conductor characteristics, and form simultaneously TFT source electrode and TFT drain electrode;

The 3rd step: form insulation course on the basis that forms the second step pattern, and form contact hole graph in the relevant position of signal line linking line, lattice-shaped common electrode;

The 4th step: the pattern that on insulation course, forms signal wire, sweep trace, common electrode wire and TFT grid with metal.

The present invention uses as TFT channel semiconductor, source-drain electrode, lattice-shaped pixel electrode or lattice-shaped common electrode with metal oxide, can improve the TFT driving force and simplify technique.

Description of drawings

Fig. 1 is the structural representation that available liquid crystal shows (LCD) device;

Fig. 2 is the structural representation of display panels the first embodiment of the present invention;

Fig. 2 A is that display panels shown in Figure 1 is at the cut-open view of A-A ' direction;

Fig. 3 is the schematic diagram of the first step manufacture method of display panels shown in Figure 1;

Fig. 3 A is the cut-open view in A-A ' direction shown in Figure 3;

Fig. 4 is the schematic diagram of the second step manufacture method of display panels shown in Figure 1;

Fig. 4 A is the cut-open view in A-A ' direction shown in Figure 4;

Fig. 5 is the schematic diagram of the 3rd one-step preparation method of display panels shown in Figure 1;

Fig. 5 A is the cut-open view in A-A ' direction shown in Figure 5;

Fig. 6 is the schematic diagram of the 4th one-step preparation method of display panels shown in Figure 1;

Fig. 6 A is the cut-open view in A-A ' direction shown in Figure 6;

Fig. 7 is the structural representation of display panels the second embodiment of the present invention;

Fig. 7 A is that display panels shown in Figure 7 is at the cut-open view of A-A ' direction;

Fig. 8 is the schematic diagram of the first step manufacture method of display panels shown in Figure 7;

Fig. 8 A is the cut-open view in A-A ' direction shown in Figure 8;

Fig. 9 is the schematic diagram of the second step manufacture method of display panels shown in Figure 7;

Fig. 9 A is the cut-open view in A-A ' direction shown in Figure 9;

Figure 10 is the schematic diagram of the 3rd one-step preparation method of display panels shown in Figure 7;

Figure 10 A is the cut-open view in A-A ' direction shown in Figure 10;

Figure 11 is the schematic diagram of the 4th one-step preparation method of display panels shown in Figure 7;

Figure 11 A is the cut-open view in A-A ' direction shown in Figure 11.

Embodiment

Below in conjunction with the drawings and specific embodiments, further illustrate the present invention, should understand these embodiment only is used for explanation the present invention and is not used in and limits the scope of the invention, after having read the present invention, those skilled in the art all fall within the application's claims limited range to the modification of the various equivalent form of values of the present invention.

The present invention is a kind of metal oxide XY switch type display panels, XY switch type IPS(In-Plane Switching) the two poles of the earth all on same so that liquid crystal molecule planar rotate technology.

Fig. 2 to Fig. 6 A is the schematic diagram of first embodiment of the invention.

Such as Fig. 2 and Fig. 2 A, metal oxide XY switch type display panels of the present invention comprises: signal wire 10, are connected with sweep trace with the crisscross sweep trace 30 of signal wire 10, by signal wire 10 and intersect a plurality of pixel cells of limiting, common electrode wire 20, the lattice-shaped common electrode 80 that with common electrode wire 20 be connected, the insulation course 40 parallel with sweep trace 30.

Wherein, signal wire 10, sweep trace 30, common electrode wire 20 are positioned at the bottom of display panels, and described lattice-shaped common electrode 80 is positioned at the top layer of display panels.

Each pixel cell comprises: film crystal pipe unit, the lattice-shaped pixel electrode 70 that is connected with the film crystal pipe unit.

Wherein, the film crystal pipe unit comprises: the TFT grid 31 that is connected with sweep trace 30, the TFT source electrode 61 that is electrically connected with signal wire 10, the TFT drain electrode 62 that is electrically connected with lattice-shaped pixel electrode 70; be provided with TFT channel region 60 between described TFT source electrode 61 and the TFT drain electrode 62, in the TFT channel region, be provided with protective seam 110.

Described TFT source electrode 61, TFT drain electrode 62, lattice-shaped pixel electrode 70 and lattice-shaped common electrode 80 are by becoming the transparency electrode with conductor characteristics by the kation injection mode on the metal oxide, and TFT source electrode 61, TFT drain electrode 62 and lattice-shaped pixel electrode 70 all are positioned at the top layer of this display panels.

Described lattice-shaped pixel electrode 70 forms simultaneously with lattice-shaped common electrode 80, this lattice-shaped common electrode 80 is the COM electrode of this display panels, and the lattice-shaped common electrode 80 that is positioned at top layer is crisscross arranged at pixel region with lattice-shaped pixel electrode 70 with layer, lattice-shaped common electrode 80 is positioned at same with lattice-shaped pixel electrode 70, so that liquid crystal molecule planar rotates.

Described signal wire 10 comprises secondary signal line and the signal line linking line 50 between first signal line and secondary signal line of first signal line, adjacent pixel unit, this signal line linking line 50 and lattice-shaped common electrode 80, lattice-shaped pixel electrode 70, TFT source electrode 61 and TFT drain and 62 5 make simultaneously, and this all is by becoming the transparency electrode with conductor characteristics by the kation injection mode on the metal oxide.

Because the grid 31 of this display panels is positioned at bottom, therefore this display panels is the display panels of bottom grating structure.

The manufacturing step of display panels of the present invention is as follows:

The first step: such as Fig. 3 and Fig. 3 A, form the underlying metal oxide skin(coating) in the glass substrate (not shown), concrete formation: signal wire 10 patterns, common electrode wire 20 patterns, sweep trace 30 patterns and with sweep trace 30 TFT grids 31 connected vertically.

Described common electrode wire 20 is parallel with sweep trace 30, disconnects between the signal wire of described signal wire 10 and adjacent pixel unit, and described common electrode wire 20 and sweep trace 30 are between adjacent two signal wires 10.

Described metal material is Cr or Al or Cu, and thickness is the 3500-4500 dust, is preferably 4000 dusts.

Second step: such as Fig. 4 and Fig. 4 A, form insulation course 40 on the basis that forms first step pattern, and form contact hole graph in signal wire 10, sweep trace 30, common electrode wire 20 relevant positions, be specially: form the first contact hole 41 and the second contact hole 42 at signal wire 10 two ends; End and centre in common electrode wire 20 form respectively the 3rd contact hole 43 and the 4th contact hole 44; Form the 5th contact hole 45 in the end of sweep trace 30.

The material of insulation course 40 can be SiNx or SiO 2, thickness is the 500-1500 dust, thickness is preferably 1000 dusts.

The 3rd step: such as Fig. 5 and Fig. 5 A, be connected to signal line linking line 50 between the adjacent signals line 10, the source-drain electrode connecting line 60 that is connected with signal line linking line 50, and source-drain electrode connecting line 60 lattice-shaped pixel electrodes 70 and the lattice-shaped common electrode 80 that interlocks with the lattice-shaped pixel electrode forming with metal oxide on the insulation course 40.

Described source-drain electrode connecting line 60 is the TFT channel region; Described lattice-shaped pixel electrode 70 and 80 cross arrangements of lattice-shaped common electrode are on insulation course 40, and described lattice-shaped common electrode 80 is electrically connected lattice-shaped common electrode 80 and common electrode wire 20 by the 4th contact hole 44; Metal oxide is drawn common electrode wire terminal signals line 90 by the 3rd contact hole 43 of common electrode wire 20; Metal oxide is drawn sweep trace terminal signals line 100 by the 5th contact hole 45 of sweep trace 30.

The material of metal oxide is IZO or IGZO, and thickness is the 450-550 dust, is preferably 500 dusts.

The 4th step: such as Fig. 6 and Fig. 6 A; form protective seam 110 figures at source-drain electrode connecting line 60; then utilize the kation injection mode to allow channel protective layer 110 figures metal oxide in addition become the transparency electrode with conductor characteristics, and form simultaneously TFT source electrode 61 and TFT drain electrode 62.

The material of protective seam 110 figures is SiNx or SiO 2, thickness is the 500-1500 dust, is preferably 1000 dusts.

Fig. 7 to Figure 11 A is the schematic diagram of second embodiment of the invention.

The second embodiment of the present invention and the above-mentioned first embodiment key distinction are: the first embodiment is the display panels of bottom grating structure, and lattice-shaped common electrode 80 all is positioned at top layer with lattice-shaped pixel electrode 70; The second embodiment is the display panels of top gate structure, and lattice-shaped common electrode 80 ' all is positioned at bottom with lattice-shaped pixel electrode 70 '.

Such as Fig. 7 and Fig. 7 A, metal oxide XY switch type display panels of the present invention comprises: signal wire 10 ', with the crisscross sweep trace 30 ' of signal wire 10 ', are connected with sweep trace by signal wire 10 ' ' intersect a plurality of pixel cells of limiting, the common electrode wire 20 ' parallel with sweep trace 30 ', lattice-shaped common electrode 80 ', the insulation course 40 ' that is connected with common electrode wire 20 '.

Wherein, signal wire 10 ', sweep trace 30 ', common electrode wire 20 ' are positioned at the top layer of display panels, and described lattice-shaped common electrode 80 ' is positioned at the bottom of display panels.

Each pixel cell comprises: film crystal pipe unit, the lattice-shaped pixel electrode 70 ' that is connected with the film crystal pipe unit.

Wherein, the film crystal pipe unit comprises: the TFT grid 31 ' that is connected with sweep trace 30 ', the TFT source electrode 61 ' that is electrically connected with signal wire 10 ', the TFT drain electrode 62 ' that is electrically connected with lattice-shaped pixel electrode 70 '; be provided with TFT channel region 60 ' between described TFT source electrode 61 ' and the TFT drain electrode 62 ', in the TFT channel region, be provided with protective seam 110 '.

Described TFT source electrode 61 ', TFT drain electrode 62 ', lattice-shaped pixel electrode 70 ' and lattice-shaped common electrode 80 ' are by becoming the transparency electrode with conductor characteristics by the kation injection mode on the metal oxide, and TFT source electrode 61 ', TFT drain electrode 62 ' and lattice-shaped pixel electrode 70 ' all are positioned at the bottom of this display panels.

Described lattice-shaped pixel electrode 70 ' forms simultaneously with lattice-shaped common electrode 80 ', this lattice-shaped common electrode 80 ' is the COM electrode of this display panels, and the lattice-shaped common electrode 80 ' that is positioned at bottom is crisscross arranged at pixel region with lattice-shaped pixel electrode 70 ' with layer, lattice-shaped common electrode 80 ' is positioned at same with lattice-shaped pixel electrode 70 ', so that liquid crystal molecule planar rotates.

Described signal wire 10 ' comprises secondary signal line and the signal line linking line 50 ' between first signal line and secondary signal line of first signal line, adjacent pixel unit, this signal line linking line 50 ' is made simultaneously with lattice-shaped common electrode 80 ', lattice-shaped pixel electrode 70 ', TFT source electrode 61 ' and TFT drain electrode 62 ' five, and this all is by becoming the transparency electrode with conductor characteristics by the kation injection mode on the metal oxide.

Because the grid 31 ' of this display panels is positioned at bottom, therefore this display panels is the display panels of top gate structure.

Below as follows for the manufacturing step of display panels the second embodiment of the present invention:

The first step: such as Fig. 8 and Fig. 8 A, form signal line linking line 50 ', the source-drain electrode connecting line 60 ' that is connected with signal line linking line 50 ', and source-drain electrode connecting line 60 ' lattice-shaped pixel electrode 70 ' and the lattice-shaped common electrode 80 ' that interlocks with the lattice-shaped pixel electrode in the glass substrate (not shown) with metal oxide.

Described source-drain electrode connecting line 60 ' is the TFT channel region; Described lattice-shaped pixel electrode 70 ' and the 80 ' cross arrangement of lattice-shaped common electrode.

The material of metal oxide is IZO or IGZO, and thickness is the 450-550 dust, is preferably 500 dusts.

Second step: such as Fig. 9 and Fig. 9 A; form protective seam 110 ' figure at source-drain electrode connecting line 60 '; then utilize the kation injection mode to allow channel protective layer 110 ' figure metal oxide in addition become the transparency electrode with conductor characteristics, and form simultaneously TFT source electrode 61 ' and TFT drain electrode 62 '.

The material of protective seam 110 ' figure is SiNx or SiO 2, thickness is the 500-1500 dust, is preferably 1000 dusts.

The 3rd step: such as Figure 10 and Figure 10 A, form insulation course 40 ' on the basis that forms the second step pattern, and form contact hole graph in the relevant position of signal line linking line 50 ', lattice-shaped common electrode 80 ', be specially: signal line linking line 50 ' two ends form the first contact hole 41 ' and the second contact hole 42 '; Form the 3rd contact hole 43 ' at lattice-shaped common electrode 80 '.

Material at edge layer 40 ' is SiNx or SiO 2, thickness is the 500-1500 dust, is preferably 1000 dusts.

The 4th step: such as Figure 11 and Figure 11 A, at insulation course 40 ' the upper pattern that forms signal wire 10 ', sweep trace 30 ', common electrode wire 20 ' and TFT grid 31 ' with metal, described signal wire 10 ' forms the first contact hole 41 ' by adjacent two signal line linking lines 50 ' two ends and is connected contact hole 42 ' connection; Described sweep trace 30 ' and common electrode wire the 20 ' parallel signal line linking line 50 ' upper strata of being located at.

The material of metal is Cr or Al or Cu, and thickness is the 3500-4500 dust, is preferably 4000 dusts.

The present invention uses as TFT channel semiconductor, source-drain electrode, lattice-shaped pixel electrode or lattice-shaped common electrode with metal oxide, can improve the TFT driving force and simplify technique.

Claims (10)

1. a metal oxide XY switch type display panels is characterized in that, comprising:
Sweep trace;
Signal wire intersects in length and breadth with sweep trace;
Pixel cell, limited by sweep trace and signal wire intersection, described each pixel cell comprises thin film transistor (TFT) and pixel electrode, and described thin film transistor (TFT) comprises the TFT grid that is electrically connected with sweep trace, the TFT source electrode that is electrically connected with signal line linking line and the TFT that is connected with the lattice-shaped pixel electrode drain;
Common electrode wire be arranged in parallel with sweep trace;
The lattice-shaped common electrode is electrically connected with common electrode wire; This lattice-shaped common electrode and grid pixel electrode are all staggered to be positioned at pixel region, and described lattice-shaped common electrode and grid pixel electrode are positioned at same layer.
2. metal oxide XY switch type display panels according to claim 1, it is characterized in that: described signal wire comprises secondary signal line and the signal line linking line between first signal line and secondary signal line of first signal line, adjacent pixel unit.
3. metal oxide XY switch type display panels according to claim 2, it is characterized in that: described signal line linking line, TFT source electrode, TFT drain electrode, lattice-shaped pixel electrode and lattice-shaped common electrode are metal oxide, become the transparency electrode with conductor characteristics by the Implantation mode on it.
4. metal oxide XY switch type display panels according to claim 1 is characterized in that: described signal line linking line, TFT source electrode, TFT drain electrode, lattice-shaped pixel electrode and lattice-shaped common electrode are positioned at top layer.
5. metal oxide XY switch type display panels according to claim 1, it is characterized in that: described TFT channel region is provided with protective seam.
6. metal oxide XY switch type display panels according to claim 1 is characterized in that: described signal line linking line, TFT source electrode, TFT drain electrode, lattice-shaped pixel electrode and lattice-shaped common electrode are positioned at bottom.
7. metal oxide XY switch type display panels according to claim 1, it is characterized in that: described signal wire, common electrode wire, sweep trace and TFT grid are positioned at bottom.
8. metal oxide XY switch type display panels according to claim 1, it is characterized in that: described signal wire, common electrode wire, sweep trace and TFT grid are positioned at top layer.
9. the manufacture method of a metal oxide XY switch type display panels is characterized in that, comprises the steps:
The first step: form the underlying metal oxide skin(coating) at substrate, concrete formation: signal wire pattern, common electrode line pattern, scan line pattern and the TFT grid that is connected with sweep trace;
Second step: form insulation course on the basis that forms first step pattern, and form contact hole graph in signal wire, sweep trace, common electrode wire relevant position;
The 3rd step: on the insulation course with metal oxide form be connected to signal line linking line between the adjacent signals line, the source-drain electrode connecting line that is connected with signal line linking line, with source-drain electrode connecting line lattice-shaped pixel electrode and the lattice-shaped common electrode that is connected with common electrode wire and interlocks with the lattice-shaped pixel electrode by contact hole.
The 4th step: form the protective seam figure at the source-drain electrode connecting line, then utilize the kation injection mode to allow channel protective layer figure metal oxide in addition become the transparency electrode with conductor characteristics, and form simultaneously TFT source electrode and TFT drain electrode.
10. the manufacture method of a metal oxide XY switch type display panels is characterized in that, comprises the steps:
The first step: substrate with metal oxide form signal line linking line, the source-drain electrode connecting line that is connected with signal line linking line, with source-drain electrode connecting line lattice-shaped pixel electrode and with the staggered lattice-shaped common electrode of lattice-shaped pixel electrode;
Second step: form the protective seam figure at the source-drain electrode connecting line, then utilize the kation injection mode to allow channel protective layer figure metal oxide in addition become the transparency electrode with conductor characteristics, and form simultaneously TFT source electrode and TFT drain electrode;
The 3rd step: form insulation course on the basis that forms the second step pattern, and form contact hole graph in the relevant position of signal line linking line, lattice-shaped common electrode;
The 4th step: the pattern that on insulation course, forms signal wire, sweep trace, common electrode wire and TFT grid with metal.
CN201210364959.4A 2012-09-26 2012-09-26 A kind of manufacture method of metal oxide planar switch type liquid crystal display panel CN102866553B (en)

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CN106019745A (en) * 2016-06-21 2016-10-12 上海纪显电子科技有限公司 Display device, array substrate and production method of array substrate

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