CN102864437B - 一种用于反应室的旋转装置 - Google Patents
一种用于反应室的旋转装置 Download PDFInfo
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- CN102864437B CN102864437B CN201210366708.XA CN201210366708A CN102864437B CN 102864437 B CN102864437 B CN 102864437B CN 201210366708 A CN201210366708 A CN 201210366708A CN 102864437 B CN102864437 B CN 102864437B
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CN201210366708.XA CN102864437B (zh) | 2012-09-28 | 2012-09-28 | 一种用于反应室的旋转装置 |
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CN201210366708.XA CN102864437B (zh) | 2012-09-28 | 2012-09-28 | 一种用于反应室的旋转装置 |
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CN102864437A CN102864437A (zh) | 2013-01-09 |
CN102864437B true CN102864437B (zh) | 2014-04-09 |
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Families Citing this family (4)
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CN103436862B (zh) * | 2013-08-06 | 2015-04-22 | 中国电子科技集团公司第四十八研究所 | 一种用于mocvd反应器的支撑轴及mocvd反应器 |
CN104213103A (zh) * | 2014-09-24 | 2014-12-17 | 深圳市捷佳伟创新能源装备股份有限公司 | 一种mocvd反应室保温隔热装置 |
CN105350073B (zh) * | 2015-10-30 | 2018-09-25 | 中国电子科技集团公司第四十八研究所 | 一种硅外延设备的石墨盘旋转密封装置及自动上下料系统 |
CN105355584A (zh) * | 2015-11-19 | 2016-02-24 | 中山德华芯片技术有限公司 | 一种能防止mocvd反应过程中晶圆片翘曲的结构 |
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US5186756A (en) * | 1990-01-29 | 1993-02-16 | At&T Bell Laboratories | MOCVD method and apparatus |
CN1180125C (zh) * | 2002-01-30 | 2004-12-15 | 吉林大学 | ZnO薄膜生长用MOCVD设备及其工艺 |
CN102337517A (zh) * | 2011-05-03 | 2012-02-01 | 中国科学院福建物质结构研究所 | 氧化物薄膜生长用金属有机物化学气相沉积反应室 |
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Free format text: FORMER OWNER: FOSHAN GRADUATE SCHOOL OF SUN YAT-SEN UNIVERSITY Effective date: 20150827 |
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Effective date of registration: 20150827 Address after: 518000, Guangdong province Shenzhen Longgang District Henggang Street Ping highway 89 digital Silicon Valley (Chung Xin Industrial Park) D building research and Development Office Patentee after: Shenzhen S. C New Energy Equipment Co., Ltd. Address before: 518000, A6 building, hang Lin, four woods slope pit Industrial Park, Baoan District, Guangdong, Zhuhai Patentee before: Shenzhen S. C New Energy Equipment Co., Ltd. Patentee before: Foshan Graduate School of Sun Yat-sen University |