CN102864410A - Preparation method of high dielectric constant gate dielectric lanthanum titanium oxide amorphous film - Google Patents
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- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- LSYIMYXKHWXNBV-UHFFFAOYSA-N lanthanum(3+) oxygen(2-) titanium(4+) Chemical compound [O-2].[La+3].[Ti+4] LSYIMYXKHWXNBV-UHFFFAOYSA-N 0.000 title abstract description 16
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 37
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 230000008020 evaporation Effects 0.000 claims abstract description 20
- 238000001704 evaporation Methods 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000002245 particle Substances 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 238000000137 annealing Methods 0.000 claims description 16
- 239000012528 membrane Substances 0.000 claims 7
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 239000000376 reactant Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 abstract description 6
- 239000012495 reaction gas Substances 0.000 abstract description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000009472 formulation Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 59
- 230000015556 catabolic process Effects 0.000 description 13
- 229910052760 oxygen Inorganic materials 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- -1 TiO 2 Chemical class 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910018516 Al—O Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
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Abstract
本发明公开了一种高介电栅介质镧钛氧非晶薄膜的制备方法，用于解决现有方法制备的镧钛氧非晶薄膜的漏电流密度大的技术问题。技术方案是将LaTiO3.5颗粒作为蒸发的膜料，p型Si(100)作为衬底；衬底清洗后，于真空室中用加热系统对衬底进行加热蒸发，使其温度保持在100～250°C；蒸发时间为1～6min，电子枪束流大小为70～90mA；真空室中真空度小于3×10-3Pa，蒸发过程中，使用纯度99.99％的O2作为反应气体；得到沉积态的镧钛氧非晶薄膜；沉积态的镧钛氧非晶薄膜在700～900°C快速退火1～5min，得到镧钛氧非晶薄膜。由于通过优化镧钛氧非晶薄膜的配方和工艺，获得漏电流密度小、介电常数高的镧钛氧非晶薄膜。所制备的镧钛氧非晶薄膜的漏电流密度小由背景技术的～10-6A/cm2降低到～6.5×10-7A/cm2。
The invention discloses a preparation method of a high-dielectric gate dielectric lanthanum-titanium oxide amorphous film, which is used to solve the technical problem of high leakage current density of the lanthanum-titanium oxide amorphous film prepared by the existing method. The technical solution is to use LaTiO 3.5 particles as the film material for evaporation, and p-type Si(100) as the substrate; after the substrate is cleaned, use a heating system to heat and evaporate the substrate in a vacuum chamber to keep its temperature at 100-250 °C; the evaporation time is 1-6min, the beam current of the electron gun is 70-90mA; the vacuum degree in the vacuum chamber is less than 3×10 -3 Pa, during the evaporation process, O 2 with a purity of 99.99% is used as the reaction gas; the deposited state The lanthanum titanyl oxide amorphous film; the as-deposited lanthanum titanyl oxide amorphous film is rapidly annealed at 700-900°C for 1-5 minutes to obtain the lanthanum titanyl oxide amorphous film. By optimizing the formulation and process of the lanthanum titanate amorphous film, the lanthanum titanate amorphous film with low leakage current density and high dielectric constant is obtained. The leakage current density of the prepared lanthanum titanium oxide amorphous film is reduced from ~10 -6 A/cm 2 in the background technology to ~6.5×10 -7 A/cm 2 .
Description
技术领域 technical field
本发明属于功能陶瓷领域，涉及一种镧钛氧非晶薄膜的制备方法，特别是涉及一种高介电栅介质镧钛氧非晶薄膜的制备方法。The invention belongs to the field of functional ceramics, and relates to a preparation method of a lanthanum titanyl oxide amorphous film, in particular to a preparation method of a high dielectric gate dielectric lanthanum titanyl oxide amorphous film.
背景技术 Background technique
随着集成元器件在微电子技术中的广泛应用，迫切需要一种室温条件下介电常数适中，漏电流小，同时具有较高的击穿电压和较小等效栅氧化层厚度的功能材料，镧钛氧非晶薄膜被认为是一种很有希望的候选材料。目前国内外开展研究较多的高k栅绝缘介质材料主要是金属氧化物，如TiO2，ZrO2，HfO2，Er2O3，Ta2O5，Y2O3，Al2O3，Gd2O3，La2O3和硅酸盐（M-Si-O，M＝Zr，Hf，La，Gd等、铝酸盐（M-Al-O，M=Zr，Hf，La等）。但是，这些材料的介电常数和漏电流，不能够同时满足仪器的要求。With the wide application of integrated components in microelectronics technology, there is an urgent need for a functional material with moderate dielectric constant at room temperature, low leakage current, high breakdown voltage and small equivalent gate oxide thickness. , lanthanum titanium oxide amorphous thin film is considered as a promising candidate material. At present, the high-k gate insulating dielectric materials that have been studied at home and abroad are mainly metal oxides, such as TiO 2 , ZrO 2 , HfO 2 , Er 2 O 3 , Ta 2 O 5 , Y 2 O 3 , Al 2 O 3 , Gd 2 O 3 , La 2 O 3 and silicates (M-Si-O, M=Zr, Hf, La, Gd, etc., aluminates (M-Al-O, M=Zr, Hf, La, etc.) However, the dielectric constant and leakage current of these materials cannot meet the requirements of the instrument at the same time.
文献“M.Li，Z.Zhang，S.A.Campbell et al.Electrical and material characterizations ofhigh-permittivity HfxTi1-xO2 gate insulatorsa.Journal of Applied Physics.2005，98：054506”公开了一种镧钛氧非晶薄膜的制备方法，该方法采用传统的薄膜制备方法制备得到了镧钛氧非晶薄膜，但是，所制备的镧钛氧非晶薄膜的漏电流密度（～10-6）还不理想。The document "M. Li, Z. Zhang, SACampbell et al. Electrical and material characterizations of high-permittivity Hf x Ti 1-x O 2 gate insulators a. Journal of Applied Physics. 2005, 98: 054506" discloses a lanthanum titanyl oxide A method for preparing an amorphous film, which adopts a traditional film preparation method to prepare a lanthanum titanyl oxide amorphous film, but the leakage current density (~10 -6 ) of the prepared lanthanum titanyl oxide amorphous film is not ideal.
发明内容 Contents of the invention
为了克服现有的方法制备的镧钛氧非晶薄膜的漏电流密度大的不足，本发明提供一种高介电栅介质镧钛氧非晶薄膜的制备方法。该方法通过优化镧钛氧非晶薄膜的配方和工艺，可以获得漏电流密度小、介电常数高的镧钛氧非晶薄膜。In order to overcome the shortage of high leakage current density of the lanthanum titanate amorphous film prepared by the existing method, the present invention provides a preparation method of the high dielectric gate dielectric lanthanum titanate amorphous film. In the method, by optimizing the formulation and process of the lanthanum titanium oxide amorphous film, the lanthanum titanium oxide amorphous film with low leakage current density and high dielectric constant can be obtained.
本发明解决其技术问题所采用的技术方案是：一种高介电栅介质镧钛氧非晶薄膜的制备方法，其特点是包括以下步骤：The technical solution adopted by the present invention to solve the technical problem is: a method for preparing a high-dielectric gate dielectric lanthanum-titanium oxide amorphous film, which is characterized in that it includes the following steps:
（a）将纯度为99.99％的LaTiO3.5颗粒作为蒸发的膜料，衬底采用p型Si(100)；(a) LaTiO 3.5 particles with a purity of 99.99% are used as the evaporated film material, and the substrate is p-type Si(100);
（b）衬底彻底清洗后，于真空室中用加热系统对衬底进行加热蒸发，使其温度保持在100～250°C。蒸发时间为1～6min，电子枪束流大小为70～90mA。真空室中真空度小于3×10-3Pa，蒸发过程中，使用纯度99.99％的O2作为反应气体。得到沉积态的镧钛氧非晶薄膜。(b) After the substrate is thoroughly cleaned, use a heating system to heat and evaporate the substrate in a vacuum chamber, keeping the temperature at 100-250°C. The evaporation time is 1-6min, and the beam current of the electron gun is 70-90mA. The vacuum degree in the vacuum chamber is less than 3×10 -3 Pa, and O 2 with a purity of 99.99% is used as the reaction gas during the evaporation process. The as-deposited lanthanum titanium oxide amorphous film is obtained.
（c）沉积态的镧钛氧非晶薄膜在700～900°C快速退火1～5min，得到镧钛氧非晶薄膜。(c) Rapid annealing of the as-deposited lanthanum-titanium oxide amorphous film at 700-900° C. for 1-5 minutes to obtain the lanthanum-titanium oxide amorphous film.
所述LaTiO3.5颗粒的直径是2～3mm。The diameter of the LaTiO 3.5 particles is 2-3mm.
所述衬底的直径是75mm。The diameter of the substrate is 75mm.
所述p型Si(100)的电阻率是2～10Ω·cm。The resistivity of the p-type Si (100) is 2˜10Ω·cm.
本发明的有益效果是：由于通过优化镧钛氧非晶薄膜的配方和工艺，获得漏电流密度小、介电常数高的镧钛氧非晶薄膜。所制备的镧钛氧非晶薄膜的漏电流密度由背景技术的～10-6A/cm2降低到～6.5×10-7A/cm2；同时介电常数达到了19.1，保持了较高的水平。The beneficial effects of the invention are: the lanthanum titanyl oxide amorphous film with low leakage current density and high dielectric constant is obtained by optimizing the formula and process of the lanthanum titanyl oxide amorphous film. The leakage current density of the prepared lanthanum-titanium oxide amorphous film is reduced from ~10 -6 A/cm 2 in the background technology to ~6.5×10 -7 A/cm 2 ; meanwhile, the dielectric constant reaches 19.1, maintaining a relatively high s level.
下面结合附图和实施例对本发明作详细说明。The present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.
附图说明 Description of drawings
图1是本发明方法四个实施例所制备镧钛氧非晶薄膜在有氧和无氧条件下的XRD图谱。Fig. 1 is the XRD spectrum of the lanthanum titanyl oxide amorphous film prepared in four embodiments of the method of the present invention under aerobic and anaerobic conditions.
图2是本发明方法四个实施例所制备镧钛氧非晶薄膜在有氧和无氧条件下电流随电压变化的曲线。Fig. 2 is a curve of current versus voltage variation of lanthanum titanyl oxide amorphous films prepared in four embodiments of the method of the present invention under oxygen-free and oxygen-free conditions.
图3是本发明方法实施例2所制备镧钛氧非晶薄膜沉积态击穿电压随时间变化的曲线，击穿电压为22.4V。Fig. 3 is a curve of the breakdown voltage of the as-deposited lanthanum titanium oxide amorphous film prepared in Example 2 of the present invention as a function of time, and the breakdown voltage is 22.4V.
图4是本发明方法实施例3所制备镧钛氧非晶薄膜经过退火后测得的击穿电压随时间变化的曲线，快速退火1min后击穿电压为54.5V。Fig. 4 is a curve of breakdown voltage versus time measured after annealing of the lanthanum titania amorphous film prepared in Example 3 of the present invention, and the breakdown voltage is 54.5V after rapid annealing for 1 min.
图5是本发明方法实施例3所制备镧钛氧非晶薄膜经过退火后测得的击穿电压随时间变化的曲线，快速退火5min后击穿电压降低为8.7V。Fig. 5 is a curve of breakdown voltage versus time measured after annealing of the lanthanum titanyl oxide amorphous film prepared in Example 3 of the present invention, and the breakdown voltage decreases to 8.7V after rapid annealing for 5 minutes.
具体实施方式 Detailed ways
以下实施例参照图1～5。The following embodiments refer to FIGS. 1-5.
实施例1，称量纯度为99.99％的LaTiO3.5颗粒作为膜料，LaTiO3.5颗粒大小为2-3mm。采用直径为75mm的p型Si(100)作为衬底，其电阻率为2-10Ω·cm，厚度为0.5mm。衬底彻底清洗干净后，迅速放入真空室中，用加热系统对衬底进行加热，使其温度保持在100°C。蒸发前本底真空小于3×10-3Pa，蒸发过程中，为了得到较高的氧含量，使用纯度99.99％的O2作为反应气体。蒸发时间为6min，电子枪束流大小为70mA，得到沉积态的镧钛氧非晶薄膜。沉积态的薄膜在700°C快速退火5min，得到镧钛氧非晶薄膜。In Example 1, LaTiO 3.5 particles with a purity of 99.99% were weighed as a film material, and the size of the LaTiO 3.5 particles was 2-3 mm. A p-type Si (100) with a diameter of 75mm is used as a substrate, its resistivity is 2-10Ω·cm, and its thickness is 0.5mm. After the substrate is thoroughly cleaned, it is quickly placed in a vacuum chamber, and the substrate is heated with a heating system to keep its temperature at 100°C. The background vacuum before evaporation is less than 3×10 -3 Pa. During the evaporation process, in order to obtain a higher oxygen content, O 2 with a purity of 99.99% is used as the reaction gas. The evaporation time was 6 minutes, and the beam current of the electron gun was 70mA to obtain a lanthanum titanyl oxide amorphous film in a deposited state. The as-deposited film was rapidly annealed at 700°C for 5 minutes to obtain an amorphous film of lanthanum titanyl oxide.
使用XRD对薄膜相结构进行了分析；使用XPS对薄膜的成分进行了分析；并采用阻抗分析仪和半导体分析仪测试平台对薄膜的介电性能和I-V特性进行了测试。图1中曲线a为700°C时退火后得到的XRD图谱，可以看出为仍保持着非晶态结构。图2为退火后不同氧气氛条件下所得漏电流密度的随偏压的变化情况，可以看出无氧条件下漏电流密度达到5.5×10-5A/cm2。The phase structure of the film was analyzed by XRD; the composition of the film was analyzed by XPS; and the dielectric properties and IV characteristics of the film were tested by impedance analyzer and semiconductor analyzer test platform. Curve a in Fig. 1 is the XRD pattern obtained after annealing at 700°C, it can be seen that the amorphous structure is still maintained. Figure 2 shows the variation of leakage current density with bias voltage under different oxygen atmosphere conditions after annealing. It can be seen that the leakage current density reaches 5.5×10 -5 A/cm 2 under oxygen-free conditions.
实施例2，称量纯度为99.99％的LaTiO3.5颗粒作为膜料，LaTiO3.5颗粒大小为2-3mm。采用直径为75mm的p型Si(100)作为衬底，其电阻率为2-10Ω·cm，厚度为0.5mm。衬底彻底清洗干净后，迅速放入真空室中，用加热系统对衬底进行加热，使其温度保持在150°C。蒸发前本底真空小于3×10-3Pa，蒸发过程中，为了得到较高的氧含量，使用纯度99.99％的O2作为反应气体。蒸发时间为4min，电子枪束流大小为80mA，得到沉积态的镧钛氧非晶薄膜。沉积态的薄膜在750°C快速退火4min，得到镧钛氧非晶薄膜。In Example 2, LaTiO 3.5 particles with a purity of 99.99% were weighed as a film material, and the size of the LaTiO 3.5 particles was 2-3 mm. A p-type Si (100) with a diameter of 75mm is used as a substrate, its resistivity is 2-10Ω·cm, and its thickness is 0.5mm. After the substrate is thoroughly cleaned, it is quickly placed in a vacuum chamber, and the substrate is heated with a heating system to keep its temperature at 150°C. The background vacuum before evaporation is less than 3×10 -3 Pa. During the evaporation process, in order to obtain a higher oxygen content, O 2 with a purity of 99.99% is used as the reaction gas. The evaporation time was 4 minutes, and the beam current of the electron gun was 80mA to obtain a lanthanum titanyl oxide amorphous film in a deposited state. The as-deposited film was rapidly annealed at 750°C for 4 minutes to obtain an amorphous film of lanthanum titanyl oxide.
使用XRD和SEM对薄膜相结构和形貌结构进行了分析；使用XPS对薄膜的成分进行了分析；并采用阻抗分析仪和半导体分析仪测试平台对薄膜的介电性能和I-V特性进行了测量。图2为退火后不同氧气氛条件下所得漏电流密度的随偏压的变化情况，可以看出有氧条件下漏电流密度达到6.5×10-7A/cm2。有氧条件下退火后击穿电压的变化曲线如图3所示，图3表示镧钛氧非晶薄膜的沉积态击穿电压为22.4V。The phase structure and morphology of the film were analyzed by XRD and SEM; the composition of the film was analyzed by XPS; and the dielectric properties and IV characteristics of the film were measured by impedance analyzer and semiconductor analyzer test platform. Figure 2 shows the variation of leakage current density with bias voltage under different oxygen atmosphere conditions after annealing. It can be seen that the leakage current density reaches 6.5×10 -7 A/cm 2 under aerobic conditions. The change curve of the breakdown voltage after annealing under aerobic conditions is shown in Figure 3, which shows that the as-deposited breakdown voltage of the lanthanum titanyl oxide amorphous film is 22.4V.
实施例3，称量纯度为99.99％的LaTiO3.5颗粒作为膜料，LaTiO3.5颗粒大小为2-3mm。采用直径为75mm的p型Si(100)作为衬底，其电阻率为2-10Ω·cm，厚度为0.5mm。衬底彻底清洗干净后，迅速放入真空室中，用加热系统对衬底进行加热，使其温度保持在200°C。蒸发前本底真空小于3×10-3Pa，蒸发过程中，为了得到较高的氧含量，使用纯度99.99％的O2作为反应气体。蒸发时间为2min，电子枪束流大小为85mA，得到沉积态的镧钛氧非晶薄膜。沉积态的薄膜在800°C快速退火2min，得到镧钛氧非晶薄膜。In Example 3, LaTiO 3.5 particles with a purity of 99.99% were weighed as film materials, and the size of the LaTiO 3.5 particles was 2-3 mm. A p-type Si (100) with a diameter of 75mm is used as a substrate, its resistivity is 2-10Ω·cm, and its thickness is 0.5mm. After the substrate is thoroughly cleaned, it is quickly placed in a vacuum chamber, and the substrate is heated with a heating system to keep its temperature at 200°C. The background vacuum before evaporation is less than 3×10 -3 Pa. During the evaporation process, in order to obtain a higher oxygen content, O 2 with a purity of 99.99% is used as the reaction gas. The evaporation time was 2 min, and the beam current of the electron gun was 85 mA to obtain a deposited amorphous lanthanum titanyl film. The as-deposited film was rapidly annealed at 800°C for 2 minutes to obtain an amorphous film of lanthanum titanyl oxide.
使用XRD和SEM对薄膜相结构和形貌结构进行了分析；使用XPS对薄膜的成分进行了分析；并采用阻抗分析仪和半导体分析仪测试平台对薄膜的介电性能和I-V特性进行了测量。图1中曲线b为800°C时退火后得到的XRD图谱，可以看出薄膜开始从非晶态向晶态转变。有氧条件下退火后击穿电压的变化曲线如图4所示，图4表示镧钛氧非晶薄膜快速退火1min后击穿电压为54.5V。The phase structure and morphology of the film were analyzed by XRD and SEM; the composition of the film was analyzed by XPS; and the dielectric properties and I-V characteristics of the film were measured by impedance analyzer and semiconductor analyzer test platform. Curve b in Figure 1 is the XRD pattern obtained after annealing at 800°C, and it can be seen that the film begins to transform from amorphous to crystalline. The change curve of the breakdown voltage after annealing under aerobic conditions is shown in Figure 4, which shows that the breakdown voltage of the lanthanum titanium oxide amorphous film is 54.5V after rapid annealing for 1min.
实施例4，称量纯度为99.99％的LaTiO3.5颗粒作为膜料，LaTiO3.5颗粒大小为2-3mm。采用直径为75mm的p型Si(100)作为衬底，其电阻率为2-10Ω·cm，厚度为0.5mm。衬底彻底清洗干净后，迅速放入真空室中，用加热系统对衬底进行加热，使其温度保持在250°C。蒸发前本底真空小于3×10-3Pa，蒸发过程中，为了得到较高的氧含量，使用纯度99.99％的O2作为反应气体。蒸发时间为1min，电子枪束流大小为90mA，得到沉积态的镧钛氧非晶薄膜。沉积态的薄膜在900°C快速退火1min，得到镧钛氧非晶薄膜。In Example 4, LaTiO 3.5 particles with a purity of 99.99% were weighed as film materials, and the size of the LaTiO 3.5 particles was 2-3 mm. A p-type Si (100) with a diameter of 75mm is used as a substrate, its resistivity is 2-10Ω·cm, and its thickness is 0.5mm. After the substrate is thoroughly cleaned, it is quickly placed in a vacuum chamber, and the substrate is heated with a heating system to keep its temperature at 250°C. The background vacuum before evaporation is less than 3×10 -3 Pa. During the evaporation process, in order to obtain a higher oxygen content, O 2 with a purity of 99.99% is used as the reaction gas. The evaporation time was 1 min, and the beam current of the electron gun was 90 mA to obtain a lanthanum titanyl oxide amorphous film in a deposited state. The as-deposited film was rapidly annealed at 900°C for 1 min to obtain an amorphous film of lanthanum titanyl oxide.
使用XRD和SEM对薄膜相结构和形貌结构进行了分析；使用XPS对薄膜的成分进行了分析；并采用阻抗分析仪和半导体分析仪测试平台对薄膜的介电性能和I-V特性进行了测量。图1中曲线c为900°C时退火后得到的XRD图谱，可以看出为衍射峰较明显，薄膜开始从非晶态向晶态转变。有氧条件下退火后击穿电压的变化曲线如图5所示，图5表示镧钛氧非晶薄膜快速退火5min后击穿电压降低为8.7V。The phase structure and morphology of the film were analyzed by XRD and SEM; the composition of the film was analyzed by XPS; and the dielectric properties and I-V characteristics of the film were measured by impedance analyzer and semiconductor analyzer test platform. Curve c in Figure 1 is the XRD pattern obtained after annealing at 900°C, it can be seen that the diffraction peaks are more obvious, and the film begins to transform from amorphous to crystalline. The change curve of the breakdown voltage after annealing under aerobic conditions is shown in Figure 5, which shows that the breakdown voltage of the lanthanum titania amorphous film is reduced to 8.7V after rapid annealing for 5 minutes.
总之，本发明通过传统的薄膜制备工艺制备了镧钛氧非晶薄膜，经过适当的氧气氛控制和合适的温度控制，薄膜在有氧条件下，保持较低的漏电流密度（～6.5×10-7A/cm2）和较高的介电常数（19.1）。因此本发明的镧钛氧非晶薄膜可以很好的满足存储器和集成元件的使用要求，其配方及制备方法适合工业化推广和大批量生产。In a word, the present invention has prepared the lanthanum titanium oxide amorphous film through the traditional film preparation process. After proper oxygen atmosphere control and temperature control, the film maintains a relatively low leakage current density (~6.5×10 -7 A/cm 2 ) and high dielectric constant (19.1). Therefore, the lanthanum-titanium oxide amorphous thin film of the present invention can well meet the use requirements of memory devices and integrated components, and its formula and preparation method are suitable for industrial promotion and mass production.
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