CN102856450A - GaN based light-emitting diode and manufacturing method thereof - Google Patents
GaN based light-emitting diode and manufacturing method thereof Download PDFInfo
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- CN102856450A CN102856450A CN2012103534069A CN201210353406A CN102856450A CN 102856450 A CN102856450 A CN 102856450A CN 2012103534069 A CN2012103534069 A CN 2012103534069A CN 201210353406 A CN201210353406 A CN 201210353406A CN 102856450 A CN102856450 A CN 102856450A
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Abstract
The invention discloses a GaN based light-emitting diode, which comprises a substrate, an n type contract layer, an active layer and a p type contact layer, which are overlaid sequentially. The substrate is a sapphire substrate, the n type contact layer is an n type AlGaN layer, the p type contact layer is a p type GaN layer, and the active layer is an AlGaN multi-quantum well. The invention further discloses a manufacturing method of the GaN based light-emitting diode, which comprises the steps: preparing and processing the sapphire substrate; and sequentially depositing an AlN mould layer, a low temperature GaN insertion layer, an AlGaN transitional layer, the n type contact layer, the active layer, a p type electronic barrier layer, a p type transitional layer, and the p type contact layer on the sapphire substrate. The processed sapphire substrate is used as the substrate to form the light-emitting diode, so that the breakdown field strength is enhanced, the leakage is reduced, the heat conduction is increased, the light-emitting efficiency is higher and the reliability is greater. The method can remarkably reduce the crystal defect density in the substrate of the light-emitting diode and improve the performance and the service life of the light-emitting diode.
Description
Technical field
The present invention relates to a kind of manufacture method of light-emitting diode.
Background technology
Semiconductor light-emitting-diode (LED) is a kind of diode of being made by the compound of Ga, N, As, P etc., when electronics and hole-recombination, can send visible light, can be used for making luminescent device, because it is simple in structure, volume is little, and operating current is little, and is easy to use, cost is low, has been widely used at present various electro-optical systems.
Semiconductor light-emitting-diode comprises substrate and is deposited on successively P/N type epitaxial loayer, active layer and P/N type epitaxial loayer on the substrate.Substrate has important effect as the ground of this mansion of LED.Sapphire is a kind of LED substrate commonly used, generally all can comprise various defectives in the Sapphire Substrate, such as dislocation, gap or room etc., defective can cause the crystal strain, the strain meeting causes the quality of epitaxial loayer on the substrate and performance to reduce, and causes the lost of life of light-emitting diode.
For many years, along with the development of semiconductor technology, process those skilled in the art studying for a long period of time and putting into practice, and have formed comparatively perfect crystal growth technique flow process, have reduced the defect concentration that forms in the semiconductor substrate materials growth course.But people also wish to obtain the lower substrate of defect concentration, make the light-emitting diode that performance is better, the life-span is longer.How further to reduce or eliminate defective and become this area urgent problem.
Summary of the invention
In order to overcome the defective that exists in the prior art, the invention provides a kind of manufacture method of GaN base semiconductor LED, the method can significantly reduce the defect concentrations in crystals in the light-emitting diode substrate, improves performance and the life-span of light-emitting diode.
GaN based light-emitting diode of the present invention comprises substrate, N-shaped contact layer, active layer and the p-type contact layer that stacks gradually;
Wherein, substrate is sapphire, and the N-shaped contact layer is N-shaped AlGaN layer, and the p-type contact layer is p-type GaN layer; Active layer is the AlGaN Multiple Quantum Well.
Active layer is preferably the Al in 3-6 cycle
xGa
1-xN/Al
yGa
1-yThe N Multiple Quantum Well, x=0-0.5 wherein, y=0.2-0.7.
The thickness of active layer is preferably 6-9nm.
Between Sapphire Substrate and N-shaped contact layer, have AlN template layer, low temperature GaN insert layer and AlGaN transition zone.
Between active layer and p-type contact layer, also comprise p-type electronic barrier layer and p-type transition zone.Preferably, p-type electronic barrier layer 8 is p-type AlGaN layer, and p-type transition zone 9 is p-type AlGaN transition zone.
The manufacture method of GaN based light-emitting diode of the present invention comprises to be prepared and processes Sapphire Substrate, and on Sapphire Substrate successively depositing Al N template layer, low temperature GaN insert layer and AlGaN transition zone, N-shaped contact layer, active layer, p-type electronic barrier layer, p-type transition zone and p-type contact layer.
The method that wherein forms Sapphire Substrate comprises the steps:
(1) at normal temperatures and pressures, sapphire wafer is put into high temperature high pressure device, add transmission medium in high temperature high pressure device, this transmission medium is NaCL and liquid nitrogen;
Pressurization when (2) sapphire wafer being heated, being heated to temperature is 950～1020 ℃, being forced into pressure is 4.5 ~ 4.9GPa, keeps 10～15 minutes; Wherein, the rate of heat addition is 100 ℃/minute, and compression rate is 0.2～0.3GPa/ minute.
(3) stopped heating makes sapphire wafer be cooled to normal temperature; Slowly release makes sapphire wafer return to normal pressure simultaneously.Release speed is 0.5～0.8GPa/ minute.
(4) in high temperature high pressure device, annealed 20～30 minutes after, take out sapphire wafer.
Description of drawings
Fig. 1 is the structural representation of semiconductor light-emitting-diode of the present invention.
Embodiment
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
GaN based light-emitting diode of the present invention comprise substrate 1, N-shaped contact layer 2, active layer 3 and the p-type contact layer 4 that stacks gradually.
Wherein, substrate 1 is sapphire, and N-shaped contact layer 2 is N-shaped AlGaN layer, and p-type contact layer 4 is p-type GaN layer.
Active layer 3 is the AlGaN Multiple Quantum Well, and preferred AlGaN active layer is the Al in 3-6 cycle
xGa
1-xN/Al
yGa
1-yThe N Multiple Quantum Well, wherein, the thickness of trap is 1-3nm, Al component x=0-0.5; The thickness of building is 5-10nm, Al component y=0.2-0.7, and it is the quantum well of emission deep UV (ultraviolet light) wave band.
Between Sapphire Substrate 1 and N-shaped contact layer 2, have AlN template layer 5, low temperature GaN insert layer 6 and AlGaN transition zone 7.
Between active layer 3 and p-type contact layer 4, also comprise p-type electronic barrier layer 8 and p-type transition zone 9.Preferably, p-type electronic barrier layer 8 is p-type AlGaN layer, and p-type transition zone 9 is p-type AlGaN transition zone.
The manufacture method of GaN base semiconductor LED of the present invention, comprise and prepare and process Sapphire Substrate, and on Sapphire Substrate successively depositing Al N template layer, low temperature GaN insert layer and AlGaN transition zone, N-shaped contact layer, active layer, p-type electronic barrier layer, p-type transition zone and p-type contact layer.
The method that wherein forms Sapphire Substrate comprises the steps:
(1) at normal temperatures and pressures, sapphire wafer is put into high temperature high pressure device, add transmission medium in high temperature high pressure device, this transmission medium is NaCL and liquid nitrogen;
Pressurization when (2) sapphire wafer being heated, heating-up temperature is 950～1020 ℃, moulding pressure is 4.5 ~ 4.9GPa, keeps 10～15 minutes; Moulding pressure herein may also be referred to as pressurization pressure.Wherein, the rate of heat addition is 100 ℃/minute, and compression rate is 0.2～0.3GPa/ minute.
(3) stopped heating makes sapphire wafer be cooled to normal temperature; Slowly release makes sapphire wafer return to normal pressure simultaneously.Release speed is 0.5～0.8GPa/ minute.
(4) in high temperature high pressure device, annealed 20～30 minutes after, take out sapphire wafer.
The present invention has carried out the experiment of 30 groups of different temperatures and pressure limit, and sapphire wafer carried out high temperature high pressure process.Experimental data shows, it is 950～1020 ℃ that sapphire wafer is implemented heating-up temperature, after moulding pressure was the high temperature high pressure process and annealing of 4.5 ~ 4.9GPa, 25～35% before the density in its dislocation and space is reduced to and processes illustrated that the method has obviously reduced the defect concentration in the wafer.Experimental data also shows, the defect concentration of wafer and heating-up temperature after processing, moulding pressure are relevant, and its Main Function of temperature range and pressure limit, but heating, pressurization and decompression rate are also to its effect of minimizing of defect concentration, above put down in writing preferred temperature and pressure scope, and preferred heating, pressurization and decompression rate.Cooling need not adopted specific process, naturally cools off behind the stopped heating to get final product.Sapphire wafer after employing is processed has increased disruptive field intensity as the light-emitting diode that substrate forms, and has reduced electric leakage, has increased thermal conductivity, and the light emission effciency is higher, and reliability is larger.
High temperature high pressure device for the treatment of wafer of the present invention can adopt top, existing two sides and polyhedron high-pressure installation, and the polyhedron high-pressure installation comprises hexahedron pressure chamber device and the octahedra chamber device of pressing.The quiet high-pressure installation of large cavity is pushed up on the preferred two sides of adopting, and pushes up large press referred to as the two sides.The shell of this device and the material of depression bar are steel alloy, and pressing the material of anvil is tungsten carbide.Adopting this two sides to push up the maximum pressure that large press can reach is 7GPa.Polyhedron high-pressure installation and diamond anvil cell ultra-high pressure apparatus are low although its maximum pressure is compared, because its cavity volume is large, process the diameter of sample from about ten centimetres, are suitable for processing substrate wafer.
Be provided with electric calorifie installation in this high-pressure installation, it provides the heating heat by heating wire, to heating wafer after the electric calorifie installation energising.Heating-up temperature reaches as high as 1700 degrees centigrade.
Pressure medium is sodium chloride (NaCl), magnesium oxide (MgO) or liquid nitrogen, and this medium can make pressure be evenly distributed on the crystal, so that non-isotropy stress is minimum.
NaCl and MgO are low shearing strength solid, and its coefficient of internal friction is lower than 0.2, can well pressure transmission, play simultaneously heat insulation effect, and pressurization is beneficial to heat.Liquid nitrogen can be restrained the decomposition of GaN when heating and annealing when playing the pressure transmission effect.
The concrete grammar of depositing Al N template layer, low temperature GaN insert layer and AlGaN transition zone, N-shaped contact layer, active layer, p-type electronic barrier layer, p-type transition zone and p-type contact layer is successively on Sapphire Substrate:
Adopt metal organic chemical vapor deposition equipment, adopt metal organic chemical vapor deposition equipment, reaction chamber temperature is elevated to 1050-1200 ℃, at Grown on Sapphire Substrates AlN template layer; Temperature is reduced to 400-900 ℃, under the pressure 30-200torr on the AlN template layer growth thickness be that the GaN layer of 20-50nm is as low temperature GaN insert layer; Be warming up to 1050-1200 ℃, at low temperature GaN insert layer growth AlGaN transition zone; Reaction chamber temperature is elevated to 1050-1200 ℃, at low temperature GaN insert layer growth AlGaN transition zone; Keep temperature-resistant, growing n-type AlGaN layer is as the N-shaped contact layer on the AlGaN transition zone; Keep temperature-resistant, at the AlGaN active layer of N-shaped AlGaN layer growth emission deep UV (ultraviolet light) wave band; Keep temperature-resistant, successively growing p-type AlGaN electronic barrier layer and transition zone on the AlGaN active layer; Growing p-type GaN layer is as the p-type contact layer on p-type AlGaN transition zone.
Certainly; the present invention also can have other various embodiments; in the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make according to the present invention various corresponding changes and distortion, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (9)
1. a GaN based light-emitting diode comprises the substrate, N-shaped contact layer, active layer and the p-type contact layer that stack gradually; It is characterized in that,
Substrate is Sapphire Substrate, and the N-shaped contact layer is N-shaped AlGaN layer, and the p-type contact layer is p-type GaN layer; Active layer is the AlGaN Multiple Quantum Well.
2. GaN based light-emitting diode as claimed in claim 1 is characterized in that, described active layer is the Al in 3-6 cycle
xGa
1-xN/Al
yGa
1-yThe N Multiple Quantum Well, x=0-0.5 wherein, y=0.2-0.7.
3. GaN based light-emitting diode as claimed in claim 1 or 2 is characterized in that,
The thickness of described active layer is preferably 6-9nm.
4. such as the described GaN based light-emitting diode of one of claim 1-3, it is characterized in that between described Sapphire Substrate and N-shaped contact layer, having AlN template layer, low temperature GaN insert layer and AlGaN transition zone.
5. such as the described GaN based light-emitting diode of one of claim 1-4, it is characterized in that, between described active layer and described p-type contact layer, also comprise p-type electronic barrier layer and p-type transition zone.
6. GaN based light-emitting diode as claimed in claim 5 is characterized in that, described p-type electronic barrier layer 8 is p-type AlGaN layer, and described p-type transition zone 9 is p-type AlGaN transition zone.
7. the manufacture method of a GaN based light-emitting diode comprises the steps:
Prepare also to process Sapphire Substrate, and on Sapphire Substrate successively depositing Al N template layer, low temperature GaN insert layer and AlGaN transition zone, N-shaped contact layer, active layer, p-type electronic barrier layer, p-type transition zone and p-type contact layer; It is characterized in that,
The method of described processing Sapphire Substrate comprises the steps:
(1) at normal temperatures and pressures, sapphire wafer is put into high temperature high pressure device, add transmission medium in high temperature high pressure device, this transmission medium is NaCL and liquid nitrogen;
Pressurization when (2) sapphire wafer being heated, being heated to temperature is 950～1020 ℃, being forced into pressure is 4.5 ~ 4.9GPa, keeps 10～15 minutes;
(3) stopped heating makes sapphire wafer be cooled to normal temperature; Slowly release makes sapphire wafer return to normal pressure simultaneously;
(4) in high temperature high pressure device, annealed 20～30 minutes after, take out sapphire wafer.
8. the manufacture method of GaN based light-emitting diode as claimed in claim 7 is characterized in that, the rate of heat addition of heating is 100 ℃/minute in the step (2), and the compression rate of pressurization is 0.2～0.3GPa/ minute.
9. such as the manufacture method of claim 7 or 8 described GaN based light-emitting diodes, it is characterized in that the release speed of described slow release is 0.5～0.8GPa/ minute.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060097278A1 (en) * | 2002-06-20 | 2006-05-11 | Osamu Goto | Gan semiconductor device |
| CN101140867A (en) * | 2007-07-26 | 2008-03-12 | 西安电子科技大学 | GaN thin film upgrowth method based on Al3O2 substrate |
| CN101299449A (en) * | 2008-06-20 | 2008-11-05 | 华南师范大学 | GaN-based LED epitaxial wafer and preparation method thereof |
| WO2012012010A2 (en) * | 2010-04-30 | 2012-01-26 | Trustees Of Boston University | High efficiency ultraviolet light emitting diode with band structure potential fluctuations |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060097278A1 (en) * | 2002-06-20 | 2006-05-11 | Osamu Goto | Gan semiconductor device |
| CN101140867A (en) * | 2007-07-26 | 2008-03-12 | 西安电子科技大学 | GaN thin film upgrowth method based on Al3O2 substrate |
| CN101299449A (en) * | 2008-06-20 | 2008-11-05 | 华南师范大学 | GaN-based LED epitaxial wafer and preparation method thereof |
| WO2012012010A2 (en) * | 2010-04-30 | 2012-01-26 | Trustees Of Boston University | High efficiency ultraviolet light emitting diode with band structure potential fluctuations |
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