CN102856449A - GaN-based semiconductor light-emitting diode and manufacture method thereof - Google Patents
GaN-based semiconductor light-emitting diode and manufacture method thereof Download PDFInfo
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- CN102856449A CN102856449A CN2012103518278A CN201210351827A CN102856449A CN 102856449 A CN102856449 A CN 102856449A CN 2012103518278 A CN2012103518278 A CN 2012103518278A CN 201210351827 A CN201210351827 A CN 201210351827A CN 102856449 A CN102856449 A CN 102856449A
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Abstract
The invention provides a manufacture method of a GaN-based semiconductor light-emitting diode. The manufacture method includes the steps of forming of a GaN substrate and deposition of a p-type contact layer, an active layer, an n-type electronic barrier layer, an n-type transition layer and an n-type contact layer on the GaN substrate, wherein forming of the GaN substrate includes the steps: placing a GaN wafer into a high-temperature and high-pressure device at the normal temperature and under the normal pressure; heating and pressurizing the GaN wafer simultaneously for 10-15 minutes, wherein the heating temperature is 820-880 DEG C, and the pressurizing pressure is 4.1-4.6GPa; stopping heating to enable the GaN wafer to be cooled to the normal temperature; slowly releasing pressure to enable the GaN wafer to be recovered to the normal pressure; and taking the GaN wafer out after annealing in the high-temperature and high-pressure device for 20-30minutes. By the manufacture method, crystal defect density in a light-emitting diode substrate can be obviously reduced, the performance of the light-emitting diode is improved, and the service life of the light-emitting diode is prolonged.
Description
Technical field
The present invention relates to a kind of manufacture method of light-emitting diode.
Background technology
Semiconductor light-emitting-diode (LED) is a kind of diode of being made by the compound of Ga, N, As, P etc., when electronics and hole-recombination, can send visible light, can be used for making luminescent device, because it is simple in structure, volume is little, and operating current is little, and is easy to use, cost is low, has been widely used at present various electro-optical systems.
Semiconductor light-emitting-diode comprises substrate and is deposited on successively P/N type epitaxial loayer, active layer and P/N type epitaxial loayer on the substrate.Substrate has important effect as the ground of this mansion of LED.Sapphire is a kind of LED substrate commonly used, but because lattice and the thermal stress mismatch of the hetero epitaxial layer on itself and its because the degrees of expansion difference can be burst apart, cause device failure after heating.An other class LED substrate comprises GaN, GaAs, InP, InAlGaAs, InAlGaP, the semi-conducting materials such as InGaAsP.Generally all can comprise various defectives in the above-mentioned semi-conducting material as substrate, such as dislocation, gap or room etc., defective can cause the crystal strain, the strain meeting causes the quality of epitaxial loayer on the substrate and performance to reduce, and causes the lost of life of light-emitting diode.
For many years, along with the development of semiconductor technology, process those skilled in the art studying for a long period of time and putting into practice, and have formed comparatively perfect crystal growth technique flow process, have reduced the defect concentration that forms in the semiconductor substrate materials growth course.But people also wish to obtain the lower substrate of defect concentration, make the light-emitting diode that performance is better, the life-span is longer.How further to reduce or eliminate defective and become this area urgent problem.
Summary of the invention
In order to overcome the defective that exists in the prior art, the invention provides a kind of manufacture method of GaN base semiconductor LED, the method can significantly reduce the defect concentrations in crystals in the light-emitting diode substrate, improves performance and the life-span of light-emitting diode.
GaN base semiconductor LED of the present invention comprises substrate, p-type contact layer, active layer and the N-shaped contact layer that stacks gradually;
Wherein, substrate is GaN, and the p-type contact layer is p-type AlGaN layer, and the N-shaped contact layer is N-shaped GaN layer; Active layer is the AlGaN Multiple Quantum Well.
Preferably, the AlGaN active layer is the Al in 2-5 cycle
xGa
1-xN/Al
yGa
1-yThe N Multiple Quantum Well, wherein, the thickness of trap is 1-3nm, Al component x=0-0.5; The thickness of building is 5-10nm, Al component y=0.2-0.7, and it is the quantum well of emission deep UV (ultraviolet light) wave band.
Preferably, between active layer 3 and N-shaped contact layer 4, also comprise N-shaped electronic barrier layer 5 and N-shaped transition zone 6.Preferably, N-shaped electronic barrier layer 5 is N-shaped AlGaN layer, and N-shaped transition zone 6 is N-shaped AlGaN transition zone.
The manufacture method of GaN base semiconductor LED of the present invention comprises forming the GaN substrate, and at GaN substrate deposition p-type contact layer, active layer, N-shaped electronic barrier layer, N-shaped transition zone and N-shaped contact layer;
The method that wherein forms the GaN substrate comprises the steps:
(1) at normal temperatures and pressures, the GaN wafer is put into high temperature high pressure device, add transmission medium in high temperature high pressure device, this transmission medium is NaCL and liquid nitrogen;
Pressurization when (2) the GaN wafer being heated, heating-up temperature is 820～880 ℃, moulding pressure is 4.1 ~ 4.6GPa, keeps 10～15 minutes; Moulding pressure herein may also be referred to as pressurization pressure.Wherein, the rate of heat addition is 100 ℃/minute, and compression rate is 0.2～0.3GPa/ minute.
(3) stopped heating makes the GaN wafer be cooled to normal temperature; Slowly release makes the GaN wafer return to normal pressure simultaneously.Release speed is 0.5～0.8GPa/ minute.
(4) in high temperature high pressure device, annealed 20～30 minutes after, take out the GaN wafer.
Description of drawings
Fig. 1 is the structural representation of semiconductor light-emitting-diode of the present invention.
Embodiment
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
GaN base semiconductor LED of the present invention comprise substrate 1, p-type contact layer 2, active layer 3 and the N-shaped contact layer 4 that stacks gradually.
Wherein, substrate 1 is GaN, and p-type contact layer 2 is p-type AlGaN layer, and N-shaped contact layer 4 is N-shaped GaN layer.
Between active layer 3 and N-shaped contact layer 4, also comprise N-shaped electronic barrier layer 5 and N-shaped transition zone 6.Preferably, N-shaped electronic barrier layer 5 is N-shaped AlGaN layer, and N-shaped transition zone 6 is N-shaped AlGaN transition zone.
The manufacture method of GaN base semiconductor LED of the present invention comprises forming the GaN substrate, and at GaN substrate deposition p-type contact layer, active layer, N-shaped electronic barrier layer, N-shaped transition zone and N-shaped contact layer.
The method that wherein forms the GaN substrate comprises the steps:
(1) at normal temperatures and pressures, the GaN wafer is put into high temperature high pressure device, add transmission medium in high temperature high pressure device, this transmission medium is NaCL and liquid nitrogen;
Pressurization when (2) the GaN wafer being heated, heating-up temperature is 820～880 ℃, moulding pressure is 4.1 ~ 4.6GPa, keeps 10～15 minutes; Moulding pressure herein may also be referred to as pressurization pressure.Wherein, the rate of heat addition is 100 ℃/minute, and compression rate is 0.2～0.3GPa/ minute.
(3) stopped heating makes the GaN wafer be cooled to normal temperature; Slowly release makes the GaN wafer return to normal pressure simultaneously.Release speed is 0.5～0.8GPa/ minute.
(4) in high temperature high pressure device, annealed 20～30 minutes after, take out the GaN wafer.
The present invention has carried out the experiment of 50 groups of different temperatures and pressure limit, and the GaN wafer carried out high temperature high pressure process.Experimental data shows, it is 820～880 ℃ that the GaN wafer is implemented heating-up temperature, after moulding pressure was the high temperature high pressure process and annealing of 4.1 ~ 4.6GPa, 20～30% before the density in its dislocation and space is reduced to and processes illustrated that the method has obviously reduced the defect concentration in the wafer.Experimental data also shows, the defect concentration of wafer and heating-up temperature after processing, moulding pressure are relevant, and its Main Function of temperature range and pressure limit, but heating, pressurization and decompression rate are also to its effect of minimizing of defect concentration, above put down in writing preferred temperature and pressure scope, and preferred heating, pressurization and decompression rate.Cooling need not adopted specific process, naturally cools off behind the stopped heating to get final product.GaN wafer after employing is processed has increased disruptive field intensity as the light-emitting diode that substrate forms, and has reduced electric leakage, has increased thermal conductivity, and the light emission effciency is higher, and reliability is larger.
High temperature high pressure device for the treatment of wafer of the present invention can adopt top, existing two sides and polyhedron high-pressure installation, and the polyhedron high-pressure installation comprises hexahedron pressure chamber device and the octahedra chamber device of pressing.The quiet high-pressure installation of large cavity is pushed up on the preferred two sides of adopting, and pushes up large press referred to as the two sides.The shell of this device and the material of depression bar are steel alloy, and pressing the material of anvil is tungsten carbide.Adopting this two sides to push up the maximum pressure that large press can reach is 7GPa.Polyhedron high-pressure installation and diamond anvil cell ultra-high pressure apparatus are low although its maximum pressure is compared, because its cavity volume is large, process the diameter of sample from about ten centimetres, are suitable for processing substrate wafer.
Be provided with electric calorifie installation in this high-pressure installation, it provides the heating heat by heating wire, to heating wafer after the electric calorifie installation energising.Heating-up temperature reaches as high as 1700 degrees centigrade.
Pressure medium is sodium chloride (NaCl), magnesium oxide (MgO) or liquid nitrogen, and this medium can make pressure be evenly distributed on the crystal, so that non-isotropy stress is minimum.
NaCl and MgO are low shearing strength solid, and its coefficient of internal friction is lower than 0.2, can well pressure transmission, play simultaneously heat insulation effect, and pressurization is beneficial to heat.Liquid nitrogen can be restrained the decomposition of GaN when heating and annealing when playing the pressure transmission effect.
Concrete grammar at GaN substrate deposition p-type contact layer, active layer, N-shaped electronic barrier layer, N-shaped transition zone and N-shaped contact layer is: adopt metal organic chemical vapor deposition equipment, reaction chamber temperature is elevated to 1050-1200 ℃, at low temperature GaN insert layer growth AlGaN transition zone; Keep temperature-resistant, the growing p-type AlGaN layer is as the p-type contact layer on the AlGaN transition zone; Keep temperature-resistant, at the AlGaN active layer of p-type AlGaN layer growth emission deep UV (ultraviolet light) wave band; Keep temperature-resistant, successively growing n-type AlGaN electronic barrier layer and transition zone on the AlGaN active layer; Growing n-type GaN layer is as the N-shaped contact layer on N-shaped AlGaN transition zone.
Certainly; the present invention also can have other various embodiments; in the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make according to the present invention various corresponding changes and distortion, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (6)
1. a GaN base semiconductor LED comprises the substrate, p-type contact layer, active layer and the N-shaped contact layer that stack gradually; It is characterized in that,
Substrate is GaN, and the p-type contact layer is p-type AlGaN layer, and the N-shaped contact layer is N-shaped GaN layer; Active layer is the AlGaN Multiple Quantum Well.
2. GaN base semiconductor LED as claimed in claim 1 is characterized in that, active layer is the Al in 2-5 cycle
xGa
1-xN/Al
yGa
1-yThe N Multiple Quantum Well, wherein, the thickness of trap is 1-3nm, Al component x=0-0.5; The thickness of building is 5-10nm, Al component y=0.2-0.7.
3. GaN base semiconductor LED as claimed in claim 1 or 2 is characterized in that, also comprises N-shaped electronic barrier layer and N-shaped transition zone between active layer and N-shaped contact layer.
4. GaN base semiconductor LED as claimed in claim 3 is characterized in that, the N-shaped electronic barrier layer is N-shaped AlGaN layer, and the N-shaped transition zone is N-shaped AlGaN transition zone.
5. the manufacture method of a GaN base semiconductor LED comprises forming the GaN substrate, and at GaN substrate deposition p-type contact layer, active layer, N-shaped electronic barrier layer, N-shaped transition zone and N-shaped contact layer; It is characterized in that,
The method that forms the GaN substrate comprises the steps:
(1) at normal temperatures and pressures, the GaN wafer is put into high temperature high pressure device, add transmission medium in high temperature high pressure device, this transmission medium is NaCL and liquid nitrogen;
Pressurization when (2) the GaN wafer being heated, being heated to temperature is 820～880 ℃, being forced into pressure is 4.1 ~ 4.6GPa, keeps 10～15 minutes;
(3) stopped heating makes the GaN wafer be cooled to normal temperature; Slowly release makes the GaN wafer return to normal pressure simultaneously; Release speed is 0.5～0.8GPa/ minute;
(4) in high temperature high pressure device, annealed 20～30 minutes after, take out the GaN wafer.
6. the manufacture method of GaN base semiconductor LED as claimed in claim 5 is characterized in that, the rate of heat addition is 100 ℃/minute in the step (2), and compression rate is 0.2～0.3GPa/ minute.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103746049A (en) * | 2014-01-26 | 2014-04-23 | 南通明芯微电子有限公司 | Method for manufacturing p-type GaAs-based semiconductor light emitting diode |
| CN108538923A (en) * | 2018-05-16 | 2018-09-14 | 南京大学 | A kind of gallium nitride diode of composite terminal structure |
| CN108550669A (en) * | 2013-01-25 | 2018-09-18 | 新世纪光电股份有限公司 | Nitride semiconductor structure and semiconductor light-emitting elements |
| CN108598192A (en) * | 2018-05-15 | 2018-09-28 | 中国科学院半导体研究所 | InGaN/GaN heteroepitaxial structures and its growing method |
| US10319879B2 (en) | 2016-03-08 | 2019-06-11 | Genesis Photonics Inc. | Semiconductor structure |
| US10468549B2 (en) | 2016-09-19 | 2019-11-05 | Genesis Photonics Inc. | Semiconductor device containing nitrogen |
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| CN1838384A (en) * | 2006-03-10 | 2006-09-27 | 中国科学院上海微系统与信息技术研究所 | Recovery method for gallium nitride material damaged by dry-method etching |
| US20080305560A1 (en) * | 2007-06-06 | 2008-12-11 | Joseph Reid Henrichs | Method for eliminating defects from semiconductor materials |
| WO2012012010A2 (en) * | 2010-04-30 | 2012-01-26 | Trustees Of Boston University | High efficiency ultraviolet light emitting diode with band structure potential fluctuations |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1838384A (en) * | 2006-03-10 | 2006-09-27 | 中国科学院上海微系统与信息技术研究所 | Recovery method for gallium nitride material damaged by dry-method etching |
| US20080305560A1 (en) * | 2007-06-06 | 2008-12-11 | Joseph Reid Henrichs | Method for eliminating defects from semiconductor materials |
| WO2012012010A2 (en) * | 2010-04-30 | 2012-01-26 | Trustees Of Boston University | High efficiency ultraviolet light emitting diode with band structure potential fluctuations |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108550669A (en) * | 2013-01-25 | 2018-09-18 | 新世纪光电股份有限公司 | Nitride semiconductor structure and semiconductor light-emitting elements |
| CN108565319A (en) * | 2013-01-25 | 2018-09-21 | 新世纪光电股份有限公司 | Nitride semiconductor structure and semiconductor light-emitting elements |
| CN108565319B (en) * | 2013-01-25 | 2020-10-02 | 新世纪光电股份有限公司 | Nitride semiconductor structure and semiconductor light emitting element |
| CN108550669B (en) * | 2013-01-25 | 2020-10-09 | 新世纪光电股份有限公司 | Nitride semiconductor structure and semiconductor light emitting element |
| CN103746049A (en) * | 2014-01-26 | 2014-04-23 | 南通明芯微电子有限公司 | Method for manufacturing p-type GaAs-based semiconductor light emitting diode |
| US10319879B2 (en) | 2016-03-08 | 2019-06-11 | Genesis Photonics Inc. | Semiconductor structure |
| US10468549B2 (en) | 2016-09-19 | 2019-11-05 | Genesis Photonics Inc. | Semiconductor device containing nitrogen |
| CN108598192A (en) * | 2018-05-15 | 2018-09-28 | 中国科学院半导体研究所 | InGaN/GaN heteroepitaxial structures and its growing method |
| CN108538923A (en) * | 2018-05-16 | 2018-09-14 | 南京大学 | A kind of gallium nitride diode of composite terminal structure |
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