CN102842592B - Cmos image sensor module and preparation method thereof - Google Patents
Cmos image sensor module and preparation method thereof Download PDFInfo
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- CN102842592B CN102842592B CN201210313527.0A CN201210313527A CN102842592B CN 102842592 B CN102842592 B CN 102842592B CN 201210313527 A CN201210313527 A CN 201210313527A CN 102842592 B CN102842592 B CN 102842592B
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Abstract
A kind of cmos image sensor module and preparation method thereof, wherein, a kind of manufacture method of cmos image sensor module, comprise: respectively wafer-level test is carried out to the cmos image sensor of crystal column surface, judge whether each cmos image sensor meets process requirements, and judge that whether qualified optical lens is; Through hole substrate is installed in crystal column surface, makes the opening of described through hole substrate expose the photosensitive unit of cmos image sensor; Qualified optical lens is installed in the opening of the through hole substrate corresponding with qualified cmos image sensor, underproof optical lens is installed in the opening of the through hole substrate corresponding with underproof cmos image sensor, makes the sensitivity centre of the optical centre of optical lens and described cmos image sensor on the same axis.The yield of the cmos image sensor module formed is high, and cost of manufacture is low, and steady quality.
Description
Technical field
The present invention relates to image sensor package field, particularly a kind of cmos image sensor module and preparation method thereof.
Background technology
Imageing sensor is a kind of device one dimension or two-dimension optical information (opticalinformation) being converted to the signal of telecommunication.Imageing sensor can be divided into two kinds of different types further: complementary metal oxide semiconductors (CMOS) (CMOS) imageing sensor and charge coupled device (CCD) imageing sensor.Wherein cmos image sensor has and applies widely than ccd image sensor.Cmos image sensor comprises the photodiode for sensing radiant light and the CMOS logical circuit for sensed light being treated to electrical signal data.
CMOS module is made up of cmos image sensor, and because CMOS module has, structure is simple, volume is little and apply the advantages such as convenient, and tool has been widely used.
Please refer to Fig. 1, the cmos image sensor module of prior art, comprising:
Circuit base plate 101;
Be positioned at described circuit base plate 101 surface and the cmos image sensor 103 be connected with described circuit base plate 101 surface electrical, described cmos image sensor 103 surface has photosensitive unit 105;
Be positioned at the through hole substrate 130 on described cmos image sensor 103 surface, described through hole substrate 130 has the first opening 131, and described first opening 131 exposes photosensitive unit 105;
Be positioned at the optical glass 135 on described through hole substrate 130 surface, described optical glass 135 for preventing moisture, dust enters cmos image sensor 103;
Be positioned at the framework 161 on described optical glass 135 surface, described framework 161 has the second opening (sign), and described second opening is corresponding with photosensitive unit 105, is positioned at the top of described photosensitive unit 105;
Be fixed on the optical glass 160 in the second opening of described framework 161, after being amassed wealth by heavy taxation by light, be irradiated to photosensitive unit 105 surface.
The cost of the cmos image sensor module that prior art is formed is high, and yields is low.
The data of more manufacture methods about cmos image sensor module please publication number be the Chinese patent document of CN101740422A.
Summary of the invention
The problem that the present invention solves is to provide a kind of cmos image sensor module and preparation method thereof, and the cost of the imageing sensor module of formation is low, and yields is high.
For solving the problem, The embodiment provides a kind of cmos image sensor module, comprising:
Circuit base plate;
Be positioned at the cmos image sensor be electrically connected on described circuit base plate and with described circuit base plate, described cmos image sensor comprises photosensitive unit;
Optical lens, described optical lens is positioned at above described cmos image sensor, and the sensitivity centre of the optical centre of optical lens and described photosensitive unit is on the same axis;
Through hole substrate between described cmos image sensor and optical lens, described through hole substrate has opening, and the light of optical lens is irradiated to the photosensitive unit surface of described cmos image sensor by described opening.
Alternatively, the material of described through hole substrate is pottery, glass, BT resin, flame resistant material or high polymer photoetching material.
Alternatively, the optical dimensions of described optical lens is greater than the optical dimensions of photosensitive unit in the cmos image sensor corresponding with it, is less than the size of the opening of through hole substrate.
Alternatively, described circuit base plate is rigid substrate or flexible base plate.
Alternatively, also comprise: be positioned at described through hole surface, for supporting the framework of described optical lens.
Alternatively, described framework is identical with the material of optical lens, and is formed in one.
Embodiments of the invention additionally provide a kind of manufacture method of cmos image sensor module, comprising:
Wafer, through hole substrate and optical lens are provided, described crystal column surface is formed with the cmos image sensor comprising photosensitive unit, described through hole substrate has opening, the position one_to_one corresponding of the position of described opening and the photosensitive unit of cmos image sensor, and the size of described opening is more than or equal to the size of described optical lens;
Respectively wafer-level test is carried out to the cmos image sensor of described crystal column surface, judge whether each cmos image sensor meets process requirements, and judge that whether qualified optical lens is;
Through hole substrate is installed in crystal column surface, makes the opening of described through hole substrate expose the photosensitive unit of cmos image sensor;
Qualified optical lens is installed in the opening of the through hole substrate corresponding with qualified cmos image sensor, underproof optical lens is installed in the opening of the through hole substrate corresponding with underproof cmos image sensor, makes the sensitivity centre of the optical centre of optical lens and described cmos image sensor on the same axis;
After good optical lens to be installed, encapsulate described optical lens, through hole substrate and cmos image sensor, form the first encapsulating structure;
First encapsulating structure is cut down from wafer;
The first encapsulating structure cut down is fixed on corresponding circuit base plate surface.
Alternatively, the material of described through hole substrate is pottery, glass, BT resin, flame resistant material or high polymer photoetching material.
Alternatively, when the material of described through hole substrate is pottery, glass, BT resin or flame resistant material, adopt binding agent by through hole substrate bonding to cmos image sensor surface; When the material of described through hole substrate is high polymer photoetching material, adopt cure or the method for Ultraviolet radiation through hole substrate bonding is surperficial to cmos image sensor.
Alternatively, the technological parameter cured described in comprises: temperature 85 degrees Celsius-95 degrees Celsius, pressure 4000 newton-5000 newton, cures 10 minutes-40 minutes time.
Alternatively, also comprise: framework is provided, described framework is placed in described through hole surface, for supporting described optical lens.
Alternatively, described framework and optical lens are formed in one.
Alternatively, the first encapsulating structure is cut down the method for employing for adopting machinery knives or laser cutting from wafer.
Alternatively, when adopting machinery knives cutting to cut the first encapsulating structure from wafer, described cutting speed is 4-20 mm/second.
Alternatively, the described method the first encapsulating structure cut down being fixed on corresponding circuit base plate surface is: reflow soldering.
Alternatively, the method encapsulating described optical lens, through hole substrate and cmos image sensor is imageing sensor level packaging technology or straight-through silicon wafer perforation packaging technology.
Embodiments of the invention additionally provide a kind of manufacture method of cmos image sensor module, comprising:
Wafer, through hole substrate and optical lens are provided, described crystal column surface is formed with the cmos image sensor comprising photosensitive unit, described through hole substrate has opening, the position one_to_one corresponding of the position of described opening and the photosensitive unit of cmos image sensor, and the size of described opening is more than or equal to the size of described optical lens;
Through hole substrate is installed in crystal column surface, makes the opening of described through hole substrate expose the photosensitive unit of cmos image sensor;
Baffle is arranged on through hole substrate surface;
Packaging protection plate, through hole substrate and cmos image sensor, form the second encapsulating structure;
Judge the whether qualified of optical lens;
Remove the baffle in the second encapsulating structure, wafer-level test is carried out to the cmos image sensor in the second encapsulating structure, judges the whether qualified of cmos image sensor;
Qualified optical lens is installed in the opening of the through hole substrate corresponding with qualified cmos image sensor, underproof optical lens is installed in the opening of the through hole substrate corresponding with underproof cmos image sensor, makes the sensitivity centre of the optical centre of optical lens and described cmos image sensor on the same axis;
Second encapsulating structure with optical lens is cut down from wafer;
Second encapsulating structure with optical lens cut down is fixed on corresponding circuit base plate surface.
Alternatively, the material of described through hole substrate is pottery, glass, BT resin, flame resistant material or high polymer photoetching material.
Alternatively, when the material of described through hole substrate is pottery, glass, BT resin or flame resistant material, adopt binding agent by through hole substrate bonding to cmos image sensor surface; When the material of described through hole substrate is high polymer photoetching material, adopt cure or the method for Ultraviolet radiation through hole substrate bonding is surperficial to cmos image sensor.
Alternatively, the technological parameter cured described in comprises: temperature 85 degrees Celsius-95 degrees Celsius, pressure 4000 newton-5000 newton, cures 10 minutes-40 minutes time.
Alternatively, the method for described packaging protection plate, through hole substrate and cmos image sensor is imageing sensor level packaging technology or straight-through silicon wafer perforation packaging technology.
Alternatively, the method removing the baffle in the second encapsulating structure is: by the method for infrared radiation, ultraviolet irradiation or laser scanning, make the adhesive failure of bonding baffle and through hole substrate.
Alternatively, the method cut down from wafer by second encapsulating structure with optical lens is for adopting machinery knives or laser cutting.
Alternatively, when adopting machinery knives cutting to have the second encapsulating structure of optical lens, described cutting speed is 4-20 mm/second.
Alternatively, the described method second encapsulating structure with optical lens cut down being fixed on corresponding circuit base plate surface is: solder reflow process.
Compared with prior art, technical scheme of the present invention has the following advantages:
Described optical lens is located immediately at the through hole substrate surface above cmos image sensor, and the center of optical centre and described photosensitive unit on the same axis, the light of optical lens is irradiated to the photosensitive unit surface of described cmos image sensor by the opening of through hole substrate.Do not have expensive optical glass between described through hole substrate and optical lens, the cost of the cmos image sensor module of the embodiment of the present invention is low.
Further, the framework of through hole surface is identical with the material of optical lens, is formed in one.Do not have gap between framework and optical lens, avoid the pollutant in external environment, such as dust, moisture enter cmos image sensor module internal, pollute cmos image sensor.The cmos image sensor module of the embodiment of the present invention dust-proof, damp proof effective, the stable performance of module.
First wafer-level test is carried out to the cmos image sensor of crystal column surface, judge whether each cmos image sensor meets process requirements, and judge that whether qualified optical lens is; Qualified optical lens is installed in the opening of the through hole substrate corresponding with qualified cmos image sensor, underproof optical lens is installed in the opening of the through hole substrate corresponding with underproof cmos image sensor.Avoid underproof optical lens is installed to through hole substrate corresponding to qualified cmos image sensor opening in, or qualified optical lens is installed in the opening of through hole substrate corresponding to underproof cmos image sensor, adds the yields of cmos image sensor module.And optical lens is directly according in the opening of the through hole substrate corresponding with cmos image sensor, eliminates the step forming optical glass at through hole substrate surface, save processing step and cost, and improve the utilance of light path.
Further; before installation optical lens; first baffle is formed at through hole substrate surface; before in the opening installing the optical lens through hole substrate corresponding to cmos image sensor; remove baffle; and qualified optical lens is installed in the opening of the through hole substrate corresponding with qualified cmos image sensor, underproof optical lens is installed in the opening of the through hole substrate corresponding with underproof cmos image sensor.The manufacture method of the cmos image sensor module of the embodiment of the present invention, not only increase the yields forming cmos image sensor module, before also effectively prevent encapsulation, dust, moisture etc. enter the second encapsulating structure, the performance of cmos image sensor is impacted, the stable performance of the cmos image sensor module of formation.
Accompanying drawing explanation
Fig. 1 is the cross-sectional view of prior art cmos image sensor module;
Fig. 2 is the schematic flow sheet of the manufacture method of the cmos image sensor module of first embodiment of the invention;
Fig. 3-Fig. 6 is the cross-sectional view of the manufacturing process of the cmos image sensor module of first embodiment of the invention;
Fig. 7 is the schematic flow sheet of the manufacture method of the cmos image sensor module of second embodiment of the invention;
Fig. 8-Figure 12 is the cross-sectional view of the manufacturing process of the cmos image sensor module of second embodiment of the invention;
Figure 13 is the cross-sectional view of the cmos image sensor module of third embodiment of the invention.
Embodiment
As described in background, when prior art forms cmos image sensor module, yet forms both expensive optical glass at through hole substrate surface, considerably increase the cost making cmos image sensor module.And, before optical lens is installed, optical lens and cmos image sensor are not tested.Therefore, exist and qualified optical lens is installed on underproof cmos image sensor, or underproof optical lens is installed on qualified cmos image sensor, thus reduce the yields of cmos image sensor module.
Through research, inventor finds, if first carry out wafer-level test to the cmos image sensor of crystal column surface, judges whether each cmos image sensor meets process requirements, and judges that whether qualified optical lens is; Qualified optical lens is installed in the opening of the through hole substrate corresponding with qualified cmos image sensor, underproof optical lens is installed in the opening of the through hole substrate corresponding with underproof cmos image sensor.Then greatly can improve the yields of cmos image sensor module.Further, if dispense the step forming optical glass at through hole substrate surface, processing step and cost can be saved, improve the utilance of light path.
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail each embodiment of the present invention below in conjunction with accompanying drawing.
First embodiment
Please refer to Fig. 2, the manufacture method of cmos image sensor module in first embodiment of the invention, comprising:
Step S201, wafer, through hole substrate and optical lens are provided, described crystal column surface is formed with the cmos image sensor comprising photosensitive unit, described through hole substrate has opening, the position one_to_one corresponding of the position of described opening and the photosensitive unit of cmos image sensor, and the size of described opening is more than or equal to the size of described optical lens;
Step S202, carries out wafer-level test to the cmos image sensor of described crystal column surface respectively, judges whether each cmos image sensor meets process requirements, and judges that whether qualified optical lens is;
Step S203, installs through hole substrate in crystal column surface, makes the opening of described through hole substrate expose the photosensitive unit of cmos image sensor;
Step S204, qualified optical lens is installed in the opening of the through hole substrate corresponding with qualified cmos image sensor, underproof optical lens is installed in the opening of the through hole substrate corresponding with underproof cmos image sensor, makes the sensitivity centre of the optical centre of optical lens and described cmos image sensor on the same axis;
Step S205, after good optical lens to be installed, encapsulates described optical lens, through hole substrate and cmos image sensor, forms the first encapsulating structure;
Step S206, cuts down the first encapsulating structure from wafer;
Step S207, is fixed on corresponding circuit base plate surface by the first encapsulating structure cut down.
Concrete, please refer to Fig. 3-Fig. 6, Fig. 3-Fig. 6 shows the cross-sectional view of the manufacturing process of the cmos image sensor module of first embodiment of the invention.
Please refer to Fig. 3, wafer 300, through hole substrate 330, optical lens 360 are provided, described wafer 300 surface is formed with the cmos image sensor 303 comprising photosensitive unit 301, described through hole substrate 330 has opening 331, the position one_to_one corresponding of the position of described opening 331 and the photosensitive unit 301 of cmos image sensor 303, and the size of described opening 331 is more than or equal to the size of described optical lens 360.
The material of described wafer 300 is monocrystalline silicon, for the formation of cmos image sensor 303.In embodiments of the invention, described wafer 300 surface is formed with multiple cmos image sensor 303 (for ease of understanding, illustrate only two cmos image sensor 303a and cmos image sensor 303b in Fig. 3).Described in each, cmos image sensor 303 has photosensitive unit 301, such as photosensitive unit 301a and photosensitive unit 301b, for obtaining light signal, and converts described light signal to the signal of telecommunication.Owing to forming the technological process control with the cmos image sensor 303 of photosensitive unit 301 on described wafer 300 surface, be well known to those skilled in the art, do not repeat them here.
The material of described through hole substrate 330 is pottery, glass, BT resin (are namely main resinous principle with bismaleimides (BMI) and triazine, and add epoxy resin, poly-ether resins (PPE) or allyl compound etc. as modified component, the thermosetting resin formed), flame resistant material or high polymer photoetching material, be mainly used in support of optical lens 360.In an embodiment of the present invention, the material of described through hole substrate 330 is BT resin.
The photosensitive unit 301 of opening 331 for making the light through optical lens 360 enter cmos image sensor of described through hole substrate 330.Therefore, the position one_to_one corresponding of the position of described opening 331 and the photosensitive unit 301 of cmos image sensor 303, the quantity of described opening 331 is also identical with the quantity of cmos image sensor 303.Further, for making light through optical lens 360 all by the opening 331 of through hole substrate 330, the photosensitive unit 301 of cmos image sensor is entered.The size of described opening 331 is more than or equal to the size of described optical lens 360.In an embodiment of the present invention, described opening 331a is positioned at the top of photosensitive unit 301a, and described opening 331b is positioned at the top of photosensitive unit 301b.
Described optical lens 360, for being amassed wealth by heavy taxation by light, makes photosensitive unit 301 obtain more light signal.In an embodiment of the present invention, optical lens 360a and optical lens 360b is shown.The size of described opening 331a is more than or equal to the size of described optical lens 360a, and the size of described opening 331b is more than or equal to the size of described optical lens 360b.
It should be noted that, in the first embodiment of the present invention, also comprise: framework 361 is provided, described framework 361 is placed in above described through hole substrate 330, for support of optical lens 360a and optical lens 360b in described opening 331.
For preventing entering dust, moisture etc. in the cmos image sensor module of follow-up formation, described framework 361 and optical lens 360 are formed in one in an embodiment of the present invention.Described framework 361 is identical with the material of optical lens 360, and difference is, described optical lens 360 pairs of light have the effect of amassing wealth by heavy taxation, and the effect that described framework 361 pairs of light are not amassed wealth by heavy taxation.
Please continue to refer to Fig. 3, respectively wafer-level test is carried out to the cmos image sensor 303 (shown in Fig. 3) of described crystal column surface, judge whether each cmos image sensor 303 meets process requirements, and judge that whether qualified optical lens 360 (shown in Fig. 3) is.
As mentioned before, prior art is before installation optical lens 360, cmos image sensor 303 and optical lens 360 are not detected, qualified optical lens 360 may be installed in the opening 331 of the through hole substrate 330 corresponding with qualified cmos image sensor 303, or underproof optical lens 360 is installed in the opening 331 of the through hole substrate 330 corresponding with underproof cmos image sensor 303, reduces the yields of cmos image sensor module.
In embodiments of the invention, for improving the yields of cmos image sensor module, before installing above optical lens 360 to the opening 331 of the through hole substrate 330 of cmos image sensor 303 correspondence, first cmos image sensor 303 and optical lens 360 are detected.Described wafer-level test is for detecting the whether qualified of cmos image sensor 303, and its concrete grammar is: adopt cmos image sensor to obtain image, whether there is bad point in checking image, image whether distortion etc.Judge that the method that whether qualified optical lens 360 is is: whether detecting optical lens 360 outward appearance is complete, and whether there is optical distortion (test of camera lens resolving power) etc. through the light of optical lens 360.
In an embodiment of the present invention, learn through detecting, optical lens 360a is qualified, and optical lens 360b is defective; Cmos image sensor 303a is qualified, and cmos image sensor 303b is defective.
Please refer to Fig. 4, through hole substrate 330 is installed in wafer 300 surface, make the opening 331a of described through hole substrate 330 expose the photosensitive unit 301a of cmos image sensor 303a, the opening 331b of through hole substrate 330 exposes the photosensitive unit 301b of cmos image sensor 303b.
Installing through hole substrate 330 in the method based on 300 surfaces is: adopt binding agent or cure or the method for Ultraviolet radiation, by through hole substrate bonding to cmos image sensor 303a and cmos image sensor 303b surface, make opening 331a expose photosensitive unit 301a, opening 331b exposes photosensitive unit 301b.Concrete, when the material of described through hole substrate 330 is pottery, glass, BT resin or flame resistant material, adopt binding agent through hole substrate 330 to be bonded to cmos image sensor 303a surface and cmos image sensor 303b surface; When the material of described through hole substrate 330 is high polymer photoetching material, employing is cured or through hole substrate 330 is bonded to 303a surface, cmos image sensor surface and cmos image sensor 303b surface by the method for Ultraviolet radiation.
In an embodiment of the present invention, material due to described through hole substrate 330 is BT resin, described BT resin is a kind of thermosetting resin, and the method for curing can be adopted through hole substrate 330 to be bonded to 303a surface, cmos image sensor surface and cmos image sensor 303b surface.303a surface, cmos image sensor surface and cmos image sensor 303b surface effective is bonded to for making through hole substrate 330, the described technological parameter cured comprises: temperature is 85 degrees Celsius-95 degrees Celsius, pressure is 4000 newton-5000 newton, cures 10 minutes-40 minutes time.
Please refer to Fig. 5, qualified optical lens 360a is installed in the opening 331a of the through hole substrate 330 corresponding with qualified cmos image sensor 303a, underproof optical lens 360b is installed in the opening 331b of the through hole substrate 330 corresponding with underproof cmos image sensor 303b, makes the sensitivity centre of the optical centre of each optical lens 360 (shown in Fig. 3) and corresponding described cmos image sensor 303 (Fig. 3 is shown) on the same axis.
In the described opening 331a qualified optical lens 360a being installed to the through hole substrate 330 corresponding with qualified cmos image sensor 303a, the step be installed to by underproof optical lens 360b in the opening 331b of the through hole substrate 330 corresponding with underproof cmos image sensor 303b comprises: installation frame 361 (shown in Fig. 3) is to through hole substrate 330 surface, such as, above installation frame 361a to the opening 331a of through hole substrate 330, above installation frame 361b to the opening 331b of through hole substrate 330, then qualified optical lens 360a is installed in framework 361a, underproof optical lens 360b is installed in framework 361b, optical lens 360a is made to be positioned at above qualified cmos image sensor 303a, optical lens 360b is positioned at above underproof cmos image sensor 303b, or above installation frame 361b to the opening 331a of through hole substrate 330, above installation frame 361a to the opening 331b of through hole substrate 330, then qualified optical lens 360a is installed in framework 361b, underproof optical lens 360b is installed in framework 361a, make optical lens 360a be positioned at above qualified cmos image sensor 303a, optical lens 360b is positioned at above underproof cmos image sensor 303b.
In an embodiment of the present invention, because described optical lens 360 is one-body molded with framework 361, without the need to optical lens 360 is installed in framework 361, save processing step, and, gap is not had between optical lens 360 and framework 361, without the need to additionally forming optical glass between through hole substrate 330 and framework 361, not only effectively prevent follow-up dust, moisture enters in cmos image sensor module, pollute cmos image sensor, improve the stability of cmos image sensor module, and reduce the cost of manufacture of cmos image sensor module.
It should be noted that, in other embodiments of the invention, in the manufacturing process due to actual cmos image sensor module, need to detect several cmos image sensors and optical lens.Can first whether detecting optical lens qualified, then by qualified optical lens and underproof optical lens separated; Then cmos image sensor is detected, record the testing result of each cmos image sensor; Through hole substrate is finally installed in crystal column surface, makes the opening of described through hole substrate expose the photosensitive unit of cmos image sensor, then the optical lens of the acceptance or rejection of correspondence is installed on the top of described cmos image sensor.
It should be noted that, in embodiments of the invention, also comprise: form the tack coat 333 being positioned at described through hole substrate 330 surface, for framework 361 (as shown in Figure 3) and the through hole substrate 330 of boning.
Received by the photosensitive unit of cmos image sensor 303 preferably for making the light after optical lens 360, effectively light signal is converted to the signal of telecommunication, the optical centre of each optical lens 360 (shown in Fig. 3) and the sensitivity centre of corresponding described cmos image sensor 303 (shown in Fig. 3) are on the same axis.
Please continue to refer to Fig. 5, after good optical lens 360a to be installed, optical lens 360b, encapsulate described optical lens 360a, through hole substrate 330 and cmos image sensor 303a respectively, and optical lens 360b, through hole substrate 330 and cmos image sensor 303b, form multiple first encapsulating structure (sign).Encapsulate described optical lens 360a, through hole substrate 330 and cmos image sensor 303a, and the method for optical lens 360b, through hole substrate 330 and cmos image sensor 303b is imageing sensor level packaging technology or straight-through silicon wafer perforation packaging technology.Because imageing sensor level packaging technology or straight-through silicon wafer perforation packaging technology are well known to those skilled in the art, do not repeat them here.
In embodiments of the invention, because described optical lens 360a and cmos image sensor 303a is qualified, described optical lens 360b and cmos image sensor 303b is defective, therefore, the first encapsulating structure formed by optical lens 360a, through hole substrate 330 and cmos image sensor 303a is qualified, and the first encapsulating structure formed by optical lens 360b, through hole substrate 330 and cmos image sensor 303b is defective.
Please refer to Fig. 6, the first encapsulating structure is cut down from wafer 300 (shown in Fig. 5), forms multiple the first discrete encapsulating structure 380a and 380b.
After encapsulation, described multiple first encapsulating structure is connected with wafer 300 by through hole substrate 330, needs the first encapsulating structure to cut down, is beneficial to subsequent technique.The described method that first encapsulating structure is cut down employing from wafer 300 is adopt machinery knives or laser cutting.In an embodiment of the present invention, adopt machinery knives to cut the first encapsulating structure with the cutting of 4-20 mm/second speed from wafer 300, form multiple the first discrete encapsulating structure 380a and 380b.
Wherein, the first encapsulating structure 380a after cutting comprises: cmos image sensor 303a, and described cmos image sensor 303a surface has photosensitive unit 301a; Be positioned at the through hole substrate 330a on described cmos image sensor 303a surface, described through hole substrate 330a obtains by after through hole substrate 330 (shown in Fig. 5) cutting, and the opening 331a of described through hole substrate 330a exposes photosensitive unit 301a; Be positioned at the tack coat 333a on described through hole substrate 330a surface, described tack coat 333a obtains by after tack coat 333 (shown in Fig. 5) cutting; Be positioned at the framework 361a on described tack coat 333a surface and be positioned at the optical lens 360a of framework 361a, the optical centre of described optical lens 360a and the center of described photosensitive unit 301a are on the same axis.
The first encapsulating structure 380b after cutting comprises: cmos image sensor 303b, and described cmos image sensor 303b surface has photosensitive unit 301b; Be positioned at the through hole substrate 330b on described cmos image sensor 303b surface, described through hole substrate 330b obtains by after through hole substrate 330 (shown in Fig. 5) cutting, and the opening 331b of described through hole substrate 330b exposes photosensitive unit 301b; Be positioned at the tack coat 333b on described through hole substrate 330b surface, described tack coat 333b obtains by after tack coat 333 (shown in Fig. 5) cutting; Be positioned at the framework 361b on described tack coat 333b surface and be positioned at the optical lens 360b of framework 361b, the optical centre of described optical lens 360b and the center of described photosensitive unit 301b are on the same axis.
It should be noted that, cutting also comprises after forming the first discrete encapsulating structure 380a and 380b: the first encapsulating structure 380a and 380b cut down is fixed on corresponding circuit base plate (not shown) surface, to complete different functions.In embodiments of the invention, the described method the first encapsulating structure 380a and 380b cut down being fixed on corresponding circuit base plate surface is: reflow soldering.Owing to adopting reflow soldering to fix the first encapsulating structure 380a and 380b in the technique of the circuit base plate of correspondence, be well known to those skilled in the art, do not repeat them here.
In the first embodiment of the present invention, before above installation optical lens to cmos image sensor, respectively cmos image sensor and optical lens are detected, judge whether cmos image sensor meets process requirements, and whether qualified optical lens is.In installation process subsequently, qualified lens are installed in the opening of the through hole substrate corresponding with qualified cmos image sensor, underproof optical lens is installed in the opening of the through hole substrate corresponding with underproof cmos image sensor, and the sensitivity centre making the optical centre of optical lens and described cmos image sensor on the same axis.Effectively improve the yield of cmos image sensor module, and cost of manufacture reduces.
Second embodiment
Different from the first embodiment of the present invention; in the second embodiment of the present invention, when installation through hole substrate is in crystal column surface, after exposing the photosensitive unit of cmos image sensor; form baffle at through hole substrate surface, in protection subsequent technique, cmos image sensor is from the impact of dust, moisture.And installing before in optical lens to the opening of through hole substrate, remove described baffle.
Please refer to Fig. 7, the manufacture method of cmos image sensor module in second embodiment of the invention, comprising:
Step S401, wafer, through hole substrate and optical lens are provided, described crystal column surface is formed with the cmos image sensor comprising photosensitive unit, described through hole substrate has opening, the position one_to_one corresponding of the position of described opening and the photosensitive unit of cmos image sensor, and the size of described opening is more than or equal to the size of described optical lens;
Step S402, installs through hole substrate in crystal column surface, makes the opening of described through hole substrate expose the photosensitive unit of cmos image sensor;
Step S403, is arranged on through hole substrate surface by baffle;
Step S404, packaging protection plate, through hole substrate and cmos image sensor, form the second encapsulating structure;
Step S405, judges the whether qualified of optical lens;
Step S406, removes the baffle in the second encapsulating structure, carries out wafer-level test, judge the whether qualified of cmos image sensor to the cmos image sensor in the second encapsulating structure;
Step S407, qualified optical lens is installed in the opening of the through hole substrate corresponding with qualified cmos image sensor, underproof optical lens is installed in the opening of the through hole substrate corresponding with underproof cmos image sensor, makes the sensitivity centre of the optical centre of optical lens and described cmos image sensor on the same axis;
Step S408, cuts down second encapsulating structure with optical lens from wafer;
Step S409, is fixed on corresponding circuit base plate surface by second encapsulating structure with optical lens cut down.
Concrete, please refer to Fig. 8-Figure 12, Fig. 8-Figure 12 shows the cross-sectional view of the manufacturing process of the cmos image sensor module of second embodiment of the invention.
Please refer to Fig. 8, wafer 500, through hole substrate 530, optical lens 560 are provided, described wafer 500 surface is formed with the cmos image sensor 503 comprising photosensitive unit 501, described through hole substrate 530 has opening 531, the position one_to_one corresponding of the position of described opening 531 and the photosensitive unit 501 of cmos image sensor 503, and the size of described opening 531 is more than or equal to the size of described optical lens 560.
The material of described wafer 500 is monocrystalline silicon, for the formation of multiple cmos image sensor 503.In the second embodiment of the present invention, for ease of understanding, illustrate only two cmos image sensor 503a and cmos image sensor 503b, described cmos image sensor 503a surface has photosensitive unit 501a, described cmos image sensor 503b surface has photosensitive unit 501b, described photosensitive unit 501a and photosensitive unit 501b is respectively used to obtain light signal, converts the light signal of acquisition to the signal of telecommunication.More descriptions about cmos image sensor 503 and photosensitive unit 501, please refer to the associated description in first embodiment of the invention, do not repeat them here.
The material of described through hole substrate 530 is pottery, glass, BT resin, flame resistant material or high polymer photoetching material, is mainly used in support of optical lens 560.In an embodiment of the present invention, the material of described through hole substrate 530 is BT resin.
The photosensitive unit 501 of opening 531 for making the light through optical lens 560 enter cmos image sensor of described through hole substrate 530.Therefore, the position one_to_one corresponding of the position of described opening 531 and the photosensitive unit 501 of cmos image sensor 503, the quantity of described opening 531 is also identical with the quantity of cmos image sensor 503.Further, for making light through optical lens 560 all by the opening 531 of through hole substrate 530, the photosensitive unit 501 of cmos image sensor is entered.The size of described opening 531 is more than or equal to the size of described optical lens 560.In an embodiment of the present invention, described opening 531a is positioned at the top of photosensitive unit 501a, and described opening 531b is positioned at the top of photosensitive unit 501b.
Described optical lens 560, for being amassed wealth by heavy taxation by light, makes photosensitive unit obtain more light signal.In an embodiment of the present invention, optical lens 560a and optical lens 560b is shown.The size of described opening 531a is more than or equal to the size of described optical lens 560a, and the size of described opening 531b is more than or equal to the size of described optical lens 560b.
It should be noted that, in the second embodiment of the present invention, also comprise: framework 561 is provided, described framework 561 is placed in above described through hole substrate 530, for support of optical lens 560a and optical lens 560b in described opening 531.In example of the present invention, described framework 561 and optical lens 560 are formed in one, and described framework 561 is identical with the material of optical lens 560.More associated description please refer to first embodiment of the invention, do not repeat them here.
Please refer to Fig. 9, through hole substrate 530 is installed in wafer 500 surface, make the opening 531a of described through hole substrate 530 expose the photosensitive unit 501a of cmos image sensor 503a, the opening 531b of through hole substrate 530 exposes the photosensitive unit 501b of cmos image sensor 503b.
Installing through hole substrate 530 in the method based on 500 surfaces is: adopt binding agent or cure or the method for Ultraviolet radiation, by through hole substrate bonding to cmos image sensor 503a and cmos image sensor 503b surface, opening 531a is made to expose photosensitive unit 501a.Opening 531b exposes photosensitive unit 501b.The Method and process of more installation through hole substrates 530, please refer to associated description in the first embodiment of the present invention, does not repeat them here.
In the second embodiment of the present invention, the method for curing is adopted through hole substrate 530 to be bonded to 503a surface, cmos image sensor surface and cmos image sensor 503b surface.503a surface, cmos image sensor surface and cmos image sensor 503b surface effective is bonded to for making through hole substrate 530, the described technological parameter cured comprises: temperature 85 degrees Celsius-95 degrees Celsius, pressure 4000 newton-5000 newton, cures 10 minutes-40 minutes time.
Please refer to Figure 10, baffle 570 is arranged on through hole substrate 530 surface.
Consider before optical lens 560 (as shown in Figure 8) to through hole substrate 530 surface is installed, also need to detect optical lens 560, judge that whether optical lens 560 is qualified, the time that this process need is longer.In this period; if do not protected cmos image sensor 503a and cmos image sensor 503b; have the impurity such as moisture, dust unavoidably and enter cmos image sensor 503a and cmos image sensor 503b, the quality of the cmos image sensor module of follow-up formation is impacted.Therefore, in the second embodiment of the present invention, after through hole substrate 530 is installed on wafer 500 surface, baffle 570 is installed in described through hole substrate 530 surface.
Described baffle 570 covers through hole substrate 530, opening 531a and 531b; for before installation optical lens 560; protection cmos image sensor 503a and cmos image sensor 503b, avoids dust, moisture enters, affect the quality of cmos image sensor module.Described baffle 570 is transparent material, such as optical glass, and by binding agent, optical glass is arranged on through hole substrate 530 surface, wherein, described binding agent is the one in light-sensitive emulsion, heat-sensitive glue.
In the second embodiment of the present invention, described baffle 570 is optical glass, is arranged on through hole substrate 530 surface by light-sensitive emulsion.
Please continue to refer to Figure 10, packaging protection plate 570, through hole substrate 530 and cmos image sensor 503a, and packaging protection plate 570, through hole substrate 530 and cmos image sensor 503b, form multiple second encapsulating structure (sign).
Described packaging protection plate 570, through hole substrate 530 and cmos image sensor 503a, and the method for packaging protection plate 570, through hole substrate 530 and cmos image sensor 503b is imageing sensor level packaging technology or straight-through silicon wafer perforation packaging technology.Because imageing sensor level packaging technology or straight-through silicon wafer perforation packaging technology are well known to those skilled in the art, do not repeat them here.
Because baffle 570 and through hole substrate 530 correspond to multiple cmos image sensor 503a, 503b, after encapsulation, multiple second encapsulating structure is still interconnected.
It should be noted that, in the second embodiment of the present invention, also comprise: judge the whether qualified of optical lens 560 (as shown in Figure 8).The method that whether qualified described judgement optical lens 560 is, please refer to first embodiment of the invention, does not repeat them here.In second embodiment of the invention, learn through detecting, optical lens 560a is qualified, and optical lens 560b is defective.
Please refer to Figure 11, after judging that whether qualified optical lens 560 is, remove the baffle in the second encapsulating structure, wafer-level test is carried out to the cmos image sensor in the second encapsulating structure, judges the whether qualified of cmos image sensor.
Remove the baffle in the second encapsulating structure, be beneficial to carry out wafer-level test to cmos image sensor 503a, the 503b in the second encapsulating structure, judge that cmos image sensor 503a, 503b's is whether qualified.Adopt wafer-level test to the concrete grammar of cmos image sensor 503a, 503b, please refer to the first embodiment of the present invention, do not repeat them here.
In the second embodiment of the present invention, learn through test, cmos image sensor 503a is qualified, cmos image sensor 503b is defective.
The method removing baffle in the second encapsulating structure 570 (shown in Figure 10) is: by the method for infrared radiation, ultraviolet irradiation or laser scanning; make the adhesive failure of bonding baffle 570 and through hole substrate, thus realize the removal of baffle 570.In the second embodiment of the present invention, adopt the photosensitive glue of infrared radiation, the temperature of radiation is 200 degrees Celsius-500 degrees Celsius.
It should be noted that; in other embodiments of the invention, when baffle 570 is transparent material, also can first test cmos image sensor when can not affect the image quality of cmos image sensor; after being completed, then remove protective layer 570.
Please continue to refer to Figure 11, qualified optical lens 560a is installed in the opening 531a of the through hole substrate 530 corresponding with qualified cmos image sensor 503a, underproof optical lens 560b is installed in the opening 531b of the through hole substrate 530 corresponding with underproof cmos image sensor 503b, the sensitivity centre making the optical centre of optical lens 560a and described cmos image sensor 503a on the same axis, makes the sensitivity centre of the optical centre of optical lens 560b and described cmos image sensor 503b on the same axis.
In the described opening 531a qualified optical lens 560a being installed to the through hole substrate 530 corresponding with qualified cmos image sensor 503a, underproof optical lens 560b is installed to the step in the opening 531b of the through hole substrate 530 corresponding with underproof cmos image sensor 503b, please refer to the associated description in first embodiment of the invention, do not repeat them here.
In the second embodiment of the present invention, framework 561a and optical lens 560a is one-body molded, framework 561b and optical lens 560b is one-body molded, save processing step, and effectively prevent follow-up dust, moisture enters in cmos image sensor module, pollute cmos image sensor, improve the stability of cmos image sensor module.
It should be noted that, for avoiding dust, moisture enters, and in the second embodiment of the present invention, after removing baffle 570 (shown in Figure 10), installs optical lens 560 (shown in Fig. 8) immediately.
It should be noted that, in embodiments of the invention, also comprise: form the tack coat 533 being positioned at described through hole substrate 530 surface, for framework 561 (shown in Fig. 8) and the through hole substrate 530 of boning.
Received by the photosensitive unit of cmos image sensor 503 preferably for making the light after optical lens 560, effectively light signal is converted to the signal of telecommunication, the optical centre of each optical lens and the sensitivity centre of corresponding described cmos image sensor 503 (shown in Fig. 8) are on the same axis.
Please refer to Figure 12, second encapsulating structure with optical lens 560a and second encapsulating structure with optical lens 560b are cut down from wafer 500 (shown in Figure 11), is fixed in corresponding circuit base plate (not shown) surface.
Cutting has second encapsulating structure of optical lens 560a, 560b, and the method for employing is for adopting machinery knives or laser cutting.In an embodiment of the present invention, adopt machinery knives to have second encapsulating structure of optical lens 560a, 560b from wafer 500 cutting with the cutting of 4-20 mm/second speed, form multiple the second discrete encapsulating structure 580a and 580b.
Wherein, the second encapsulating structure 580a after cutting comprises: cmos image sensor 503a, and described cmos image sensor 503a surface has photosensitive unit 501a; Be positioned at the through hole substrate 530a on described cmos image sensor 503a surface, described through hole substrate 530a obtains by after through hole substrate 530 (shown in Figure 11) cutting, and the opening 531a of described through hole substrate 530a exposes photosensitive unit 501a; Be positioned at the tack coat 533a on described through hole substrate 530a surface, described tack coat 533a obtains by after tack coat 533 (shown in Figure 11) cutting; Be positioned at the framework 561a on described tack coat 533a surface and be positioned at the optical lens 560a of framework 561a, the optical centre of described optical lens 560a and the center of described photosensitive unit 501a are on the same axis.
The second encapsulating structure 580b after cutting comprises: cmos image sensor 503b, and described cmos image sensor 503b surface has photosensitive unit 501b; Be positioned at the through hole substrate 530b on described cmos image sensor 503b surface, described through hole substrate 530b obtains by after through hole substrate 530 (shown in Figure 11) cutting, and the opening 531b of described through hole substrate 530b exposes photosensitive unit 501b; Be positioned at the tack coat 533b on described through hole substrate 530b surface, described tack coat 533b obtains by after tack coat 533 (shown in Figure 11) cutting; Be positioned at the framework 561b on described tack coat 533b surface and be positioned at the optical lens 560b of framework 561b, the optical centre of described optical lens 560b and the center of described photosensitive unit 501b are on the same axis.
After forming second discrete encapsulating structure 580a, 580b, also comprise: the second encapsulating structure 580a and 580b cut down is fixed on corresponding circuit base plate surface, to complete different functions.In embodiments of the invention, the described method the second encapsulating structure 580a and 580b cut down being fixed on corresponding circuit base plate surface is: solder reflow process.Specifically please refer to the associated description of first embodiment of the invention, do not repeat them here.
After above-mentioned steps completes, completing of the cmos image sensor module of second embodiment of the invention.Owing to forming baffle at through hole substrate surface, effectively prevent in the process judging that whether qualified optical lens is, moisture, dust enter cmos image sensor, and the stability of the cmos image sensor module of follow-up formation is better, and quality is more superior.
3rd embodiment
Different with the second embodiment from the first embodiment of the present invention, the third embodiment of the present invention provides a kind of cmos image sensor module.
Accordingly, please refer to Figure 13, inventor additionally provides a kind of cmos image sensor module, comprising:
Circuit base plate 601;
Be positioned at the cmos image sensor 603 be electrically connected on described circuit base plate 601 and with described circuit base plate 601, described cmos image sensor 603 comprises photosensitive unit 605;
Optical lens 660, described optical lens 660 is positioned at above described cmos image sensor 603, and the sensitivity centre of the optical centre of its optical lens 660 and described photosensitive unit 605 is on the same axis;
Through hole substrate 630 between described cmos image sensor 603 and optical lens 660, described through hole substrate 630 has opening 631, and the light of optical lens 660 is irradiated to photosensitive unit 605 surface of described cmos image sensor 603 by described opening 631.
Wherein, circuit base plate 601 is for being electrically connected with cmos image sensor and other elements, to realize different functions.Described circuit base plate is rigid substrate or flexible base plate.
Described cmos image sensor 603 has photosensitive unit 605, for obtaining light signal, and converts described light signal to the signal of telecommunication.Described cmos image sensor 603 is electrically connected with circuit base plate 601, and the signal of telecommunication of cmos image sensor 603 is transmitted by circuit base plate 601.
Described optical lens 660, for being amassed wealth by heavy taxation by light, makes photosensitive unit 605 obtain more light signal.Further, for the light signal making photosensitive unit 605 obtain is more, the optical centre of described optical lens 660 and the sensitivity centre of described photosensitive unit 605 are on the same axis.In embodiments of the invention, the optical dimensions of described optical lens 660 is greater than the optical dimensions of photosensitive unit 605 in the cmos image sensor 603 corresponding with it, is less than the size of the opening of through hole substrate 630.
It should be noted that, in an embodiment of the present invention, also comprise: be positioned at above described through hole substrate 630, for supporting the framework 661 of described optical lens 660.
In the third embodiment of the present invention, described framework 661 is identical with the material of optical lens 660, and is formed in one, and effectively prevents moisture, dust enters, the stable performance of cmos image sensor module.Further, due to by integrated framework 661 and optical lens 660, eliminate expensive optical glass in cmos image sensor module, reduce the cost of cmos image sensor module.More descriptions about framework 661 and optical lens 660, please refer to the first embodiment of the present invention or the second embodiment, do not repeat them here.
Described through hole substrate 630 is for support of optical lens 660.The photosensitive unit 605 of opening 631 for making the light through optical lens 660 enter cmos image sensor 603 of described through hole substrate 630.For making the light through optical lens 660 enter photosensitive unit 605 as much as possible, the size of described opening 631 is more than or equal to the size of described optical lens 660.The material of described through hole substrate 630 is pottery, glass, BT resin, flame resistant material or high polymer photoetching material.In the third embodiment of the present invention, the material of described through hole substrate 630 is BT resin.
In the third embodiment of the present invention, in cmos image sensor module, the sensitivity centre of the optical centre of optical lens 660 and described photosensitive unit 605 on the same axis, the light signal that photosensitive unit 605 obtains is more, and optical lens and framework one-body molded, effectively block moisture, dust enters in cmos image sensor module, the stable performance of cmos image sensor module.In addition, eliminate expensive optical glass in cmos image sensor module, the cost of cmos image sensor module reduces.
To sum up, described optical lens is located immediately at the through hole substrate surface above cmos image sensor, and the center of optical centre and described photosensitive unit on the same axis, the light of optical lens is irradiated to the photosensitive unit surface of described cmos image sensor by the opening of through hole substrate.Do not have expensive optical glass between described through hole substrate and optical lens, the cost of the cmos image sensor module of the embodiment of the present invention is low.
Further, the framework of through hole surface is identical with the material of optical lens, is formed in one.Do not have gap between framework and optical lens, avoid the pollutant in external environment, such as dust, moisture enter cmos image sensor module internal, pollute cmos image sensor.The cmos image sensor module of the embodiment of the present invention dust-proof, damp proof effective, the stable performance of module.
First wafer-level test is carried out to the cmos image sensor of crystal column surface, judge whether each cmos image sensor meets process requirements, and judge that whether qualified optical lens is; Qualified optical lens is installed in the opening of the through hole substrate corresponding with qualified cmos image sensor, underproof optical lens is installed in the opening of the through hole substrate corresponding with underproof cmos image sensor.Avoid underproof optical lens is installed to through hole substrate corresponding to qualified cmos image sensor opening in, or qualified optical lens is installed in the opening of through hole substrate corresponding to underproof cmos image sensor, adds the yields of cmos image sensor module.And optical lens is directly according in the opening of the through hole substrate corresponding with cmos image sensor, eliminates the step forming optical glass at through hole substrate surface, save processing step and cost, and improve the utilance of light path.
Further; before installation optical lens; first baffle is formed at through hole substrate surface; before in the opening installing the optical lens through hole substrate corresponding to cmos image sensor; remove baffle; and qualified optical lens is installed in the opening of the through hole substrate corresponding with qualified cmos image sensor, underproof optical lens is installed in the opening of the through hole substrate corresponding with underproof cmos image sensor.The manufacture method of the cmos image sensor module of the embodiment of the present invention, not only increase the yields forming cmos image sensor module, before also effectively prevent encapsulation, dust, moisture etc. enter the second encapsulating structure, the performance of cmos image sensor is impacted, the stable performance of the cmos image sensor module of formation.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; the Method and Technology content of above-mentioned announcement can be utilized to make possible variation and amendment to technical solution of the present invention; therefore; every content not departing from technical solution of the present invention; the any simple modification done above embodiment according to technical spirit of the present invention, equivalent variations and modification, all belong to the protection range of technical solution of the present invention.
Claims (19)
1. a manufacture method for cmos image sensor module, is characterized in that, comprising:
Wafer, through hole substrate and optical lens are provided, described crystal column surface is formed with the cmos image sensor comprising photosensitive unit, described through hole substrate has opening, the position one_to_one corresponding of the position of described opening and the photosensitive unit of cmos image sensor, and the size of described opening is more than or equal to the size of described optical lens;
Respectively wafer-level test is carried out to the cmos image sensor of described crystal column surface, judge whether each cmos image sensor meets process requirements, and judge that whether qualified optical lens is;
Through hole substrate is installed in crystal column surface, makes the opening of described through hole substrate expose the photosensitive unit of cmos image sensor;
Qualified optical lens is installed in the opening of the through hole substrate corresponding with qualified cmos image sensor, underproof optical lens is installed in the opening of the through hole substrate corresponding with underproof cmos image sensor, makes the sensitivity centre of the optical centre of optical lens and described cmos image sensor on the same axis;
After good optical lens to be installed, encapsulate described optical lens, through hole substrate and cmos image sensor, form the first encapsulating structure;
First encapsulating structure is cut down from wafer;
The first encapsulating structure cut down is fixed on corresponding circuit base plate surface.
2. the manufacture method of cmos image sensor module as claimed in claim 1, it is characterized in that, the material of described through hole substrate is pottery, glass, BT resin, flame resistant material or high polymer photoetching material.
3. the manufacture method of cmos image sensor module as claimed in claim 1, is characterized in that, when the material of described through hole substrate is pottery, glass, BT resin or flame resistant material, adopts binding agent by through hole substrate bonding to cmos image sensor surface; When the material of described through hole substrate is high polymer photoetching material, adopt cure or the method for Ultraviolet radiation through hole substrate bonding is surperficial to cmos image sensor.
4. the manufacture method of cmos image sensor module as claimed in claim 3, is characterized in that, described in the technological parameter that cures comprise: temperature 85 degrees Celsius-95 degrees Celsius, pressure 4000 newton-5000 newton, cures 10 minutes-40 minutes time.
5. the manufacture method of cmos image sensor module as claimed in claim 1, is characterized in that, also comprise: provide framework, described framework is placed in described through hole surface, for supporting described optical lens.
6. the manufacture method of cmos image sensor module as claimed in claim 5, it is characterized in that, described framework and optical lens are formed in one.
7. the manufacture method of cmos image sensor module as claimed in claim 1, is characterized in that, the first encapsulating structure is cut down the method for employing for adopting machinery knives or laser cutting from wafer.
8. the manufacture method of cmos image sensor module as claimed in claim 1, is characterized in that, when adopting machinery knives cutting to cut the first encapsulating structure from wafer, described cutting speed is 4-20 mm/second.
9. the manufacture method of cmos image sensor module as claimed in claim 1, is characterized in that, the described method the first encapsulating structure cut down being fixed on corresponding circuit base plate surface is: reflow soldering.
10. the manufacture method of cmos image sensor module as claimed in claim 1, is characterized in that, the method encapsulating described optical lens, through hole substrate and cmos image sensor is imageing sensor level packaging technology or straight-through silicon wafer perforation packaging technology.
The manufacture method of 11. 1 kinds of cmos image sensor modules, is characterized in that, comprising:
Wafer, through hole substrate and optical lens are provided, described crystal column surface is formed with the cmos image sensor comprising photosensitive unit, described through hole substrate has opening, the position one_to_one corresponding of the position of described opening and the photosensitive unit of cmos image sensor, and the size of described opening is more than or equal to the size of described optical lens;
Through hole substrate is installed in crystal column surface, makes the opening of described through hole substrate expose the photosensitive unit of cmos image sensor;
Baffle is arranged on through hole substrate surface;
Packaging protection plate, through hole substrate and cmos image sensor, form the second encapsulating structure;
Judge the whether qualified of optical lens;
Remove the baffle in the second encapsulating structure; Wafer-level test is carried out to the cmos image sensor in the second encapsulating structure, judges the whether qualified of cmos image sensor;
Qualified optical lens is installed in the opening of the through hole substrate corresponding with qualified cmos image sensor, underproof optical lens is installed in the opening of the through hole substrate corresponding with underproof cmos image sensor, makes the sensitivity centre of the optical centre of optical lens and described cmos image sensor on the same axis;
Second encapsulating structure with optical lens is cut down from wafer;
Second encapsulating structure with optical lens cut down is fixed on corresponding circuit base plate surface.
The manufacture method of 12. cmos image sensor modules as claimed in claim 11, is characterized in that, the material of described through hole substrate is pottery, glass, BT resin, flame resistant material or high polymer photoetching material.
The manufacture method of 13. cmos image sensor modules as claimed in claim 11, it is characterized in that, when the material of described through hole substrate is pottery, glass, BT resin or flame resistant material, adopt binding agent by through hole substrate bonding to cmos image sensor surface; When the material of described through hole substrate is high polymer photoetching material, adopt cure or the method for Ultraviolet radiation through hole substrate bonding is surperficial to cmos image sensor.
The manufacture method of 14. cmos image sensor modules as claimed in claim 13, is characterized in that, described in the technological parameter that cures comprise: temperature 85 degrees Celsius-95 degrees Celsius, pressure 4000 newton-5000 newton, cures 10 minutes-40 minutes time.
The manufacture method of 15. cmos image sensor modules as claimed in claim 11, is characterized in that, the method for described packaging protection plate, through hole substrate and cmos image sensor is imageing sensor level packaging technology or straight-through silicon wafer perforation packaging technology.
The manufacture method of 16. cmos image sensor modules as claimed in claim 11; it is characterized in that; the method removing the baffle in the second encapsulating structure is: by the method for infrared radiation, ultraviolet irradiation or laser scanning, make the adhesive failure of bonding baffle and through hole substrate.
The manufacture method of 17. cmos image sensor modules as claimed in claim 11, is characterized in that, the method cut down from wafer by second encapsulating structure with optical lens is for adopting machinery knives or laser cutting.
The manufacture method of 18. cmos image sensor modules as claimed in claim 11, is characterized in that, when adopting machinery knives cutting to have the second encapsulating structure of optical lens, described cutting speed is 4-20 mm/second.
The manufacture method of 19. cmos image sensor modules as claimed in claim 11, is characterized in that, the described method second encapsulating structure with optical lens cut down being fixed on corresponding circuit base plate surface is: solder reflow process.
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| CN103247650B (en) * | 2013-05-09 | 2016-09-07 | 格科微电子（上海）有限公司 | A kind of onboard chip module and manufacture method thereof |
| CN103413815B (en) * | 2013-08-05 | 2016-09-07 | 格科微电子（上海）有限公司 | Wafer level image sensor-packaging structure and wafer level image sensor packaging method |
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| TW200727501A (en) * | 2006-01-11 | 2007-07-16 | Advanced Semiconductor Eng | Image sensor module and method for manufacturing the same |
| US7524690B2 (en) * | 2006-08-10 | 2009-04-28 | United Microelectronics Corp. | Image sensor with a waveguide tube and a related fabrication method |
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