CN102841398B - 相位差元件及其制造方法 - Google Patents
相位差元件及其制造方法 Download PDFInfo
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- CN102841398B CN102841398B CN201110184623.5A CN201110184623A CN102841398B CN 102841398 B CN102841398 B CN 102841398B CN 201110184623 A CN201110184623 A CN 201110184623A CN 102841398 B CN102841398 B CN 102841398B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 39
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 119
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 238000000034 method Methods 0.000 claims abstract description 44
- 230000005684 electric field Effects 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims description 31
- 238000006116 polymerization reaction Methods 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 150000002431 hydrogen Chemical class 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 238000005286 illumination Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 150000003949 imides Chemical class 0.000 claims description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical group [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 3
- 150000001993 dienes Chemical group 0.000 claims description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 3
- -1 ethyleneoxy, styrene Chemical group 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000004033 plastic Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 150000002118 epoxides Chemical group 0.000 claims 2
- 239000011521 glass Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 7
- 238000010147 laser engraving Methods 0.000 abstract description 4
- 230000001066 destructive effect Effects 0.000 abstract 1
- 230000000379 polymerizing effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 10
- 230000007613 environmental effect Effects 0.000 description 6
- 230000006378 damage Effects 0.000 description 5
- 238000007598 dipping method Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000000717 retained effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 208000034189 Sclerosis Diseases 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
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Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110184623.5A CN102841398B (zh) | 2011-06-23 | 2011-06-23 | 相位差元件及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201110184623.5A CN102841398B (zh) | 2011-06-23 | 2011-06-23 | 相位差元件及其制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN102841398A CN102841398A (zh) | 2012-12-26 |
CN102841398B true CN102841398B (zh) | 2015-07-01 |
Family
ID=47368929
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201110184623.5A Expired - Fee Related CN102841398B (zh) | 2011-06-23 | 2011-06-23 | 相位差元件及其制造方法 |
Country Status (1)
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CN (1) | CN102841398B (zh) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002267847A (ja) * | 2001-03-14 | 2002-09-18 | Fuji Photo Film Co Ltd | 位相差板、円偏光板および反射型液晶表示装置 |
JP2005292781A (ja) * | 2004-03-11 | 2005-10-20 | Fuji Photo Film Co Ltd | 光学補償素子、光学補償素子の製造方法、液晶表示装置及び液晶プロジェクタ |
JP2006267625A (ja) * | 2005-03-24 | 2006-10-05 | Nitto Denko Corp | 液晶パネル、液晶テレビおよび液晶表示装置 |
CN101509986B (zh) * | 2009-03-26 | 2011-02-09 | 昆山龙腾光电有限公司 | 一种波晶片及制作方法、模具和液晶面板 |
CN101699334A (zh) * | 2009-09-30 | 2010-04-28 | 深超光电(深圳)有限公司 | 液晶显示面板及其制作方法 |
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2011
- 2011-06-23 CN CN201110184623.5A patent/CN102841398B/zh not_active Expired - Fee Related
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Publication number | Publication date |
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CN102841398A (zh) | 2012-12-26 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C53 | Correction of patent of invention or patent application | ||
CB02 | Change of applicant information |
Address after: 518100 Longhua, Shenzhen, town, Foxconn science and Technology Industrial Park E District, building 4, building 1, building Applicant after: Qunkang Technology (Shenzhen) Co., Ltd. Applicant after: Innolux Display Group Address before: 518100 Longhua, Shenzhen, town, Foxconn science and Technology Industrial Park E District, building 4, building 1, building Applicant before: Qunkang Technology (Shenzhen) Co., Ltd. Applicant before: Chimei Optoelectronics Co., Ltd. |
|
COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: QIMEI ELECTRONIC CO LTD TO: INNOLUX DISPLAY CORPORATION |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150701 Termination date: 20210623 |
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CF01 | Termination of patent right due to non-payment of annual fee |