CN102838081A - 飞秒激光无掩膜法制备磁敏感微结构单元的方法 - Google Patents
飞秒激光无掩膜法制备磁敏感微结构单元的方法 Download PDFInfo
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- CN102838081A CN102838081A CN2012103039095A CN201210303909A CN102838081A CN 102838081 A CN102838081 A CN 102838081A CN 2012103039095 A CN2012103039095 A CN 2012103039095A CN 201210303909 A CN201210303909 A CN 201210303909A CN 102838081 A CN102838081 A CN 102838081A
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000011241 protective layer Substances 0.000 claims abstract description 10
- 238000004544 sputter deposition Methods 0.000 claims description 18
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 230000005294 ferromagnetic effect Effects 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 4
- 230000005290 antiferromagnetic effect Effects 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 230000005641 tunneling Effects 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000012528 membrane Substances 0.000 abstract 4
- 238000001556 precipitation Methods 0.000 abstract 1
- 238000009417 prefabrication Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 25
- 229910003321 CoFe Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000003913 materials processing Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910018979 CoPt Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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CN201210303909.5A CN102838081B (zh) | 2012-08-24 | 2012-08-24 | 飞秒激光无掩膜法制备磁敏感微结构单元的方法 |
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CN102838081A true CN102838081A (zh) | 2012-12-26 |
CN102838081B CN102838081B (zh) | 2015-02-11 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN115942860A (zh) * | 2022-12-13 | 2023-04-07 | 南方电网数字电网研究院有限公司 | 磁敏感薄膜转移方法和磁敏感器件 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006260724A (ja) * | 2005-03-18 | 2006-09-28 | Canon Machinery Inc | 薄膜表面微細突起形成方法 |
CN1929049A (zh) * | 2006-08-14 | 2007-03-14 | 南京大学 | 利用激光诱导效应改变铁磁体CrO2薄膜磁性的方法 |
CN101140978A (zh) * | 2007-09-27 | 2008-03-12 | 南京航空航天大学 | 基于薄膜/多层膜纳米磁电子器件的无掩模制备方法 |
CN101192002A (zh) * | 2007-12-12 | 2008-06-04 | 吉林大学 | 磁遥控驱动微结构的制备方法 |
CN101750651A (zh) * | 2009-11-25 | 2010-06-23 | 南京大学 | 基于单层亚波长金属光栅的磁场可调控的电磁波透射的器件与制备 |
CN102615433A (zh) * | 2012-04-09 | 2012-08-01 | 镇江大成新能源有限公司 | 薄膜太阳能电池飞秒激光刻蚀工艺 |
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- 2012-08-24 CN CN201210303909.5A patent/CN102838081B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006260724A (ja) * | 2005-03-18 | 2006-09-28 | Canon Machinery Inc | 薄膜表面微細突起形成方法 |
CN1929049A (zh) * | 2006-08-14 | 2007-03-14 | 南京大学 | 利用激光诱导效应改变铁磁体CrO2薄膜磁性的方法 |
CN101140978A (zh) * | 2007-09-27 | 2008-03-12 | 南京航空航天大学 | 基于薄膜/多层膜纳米磁电子器件的无掩模制备方法 |
CN101192002A (zh) * | 2007-12-12 | 2008-06-04 | 吉林大学 | 磁遥控驱动微结构的制备方法 |
CN101750651A (zh) * | 2009-11-25 | 2010-06-23 | 南京大学 | 基于单层亚波长金属光栅的磁场可调控的电磁波透射的器件与制备 |
CN102615433A (zh) * | 2012-04-09 | 2012-08-01 | 镇江大成新能源有限公司 | 薄膜太阳能电池飞秒激光刻蚀工艺 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115942860A (zh) * | 2022-12-13 | 2023-04-07 | 南方电网数字电网研究院有限公司 | 磁敏感薄膜转移方法和磁敏感器件 |
CN115942860B (zh) * | 2022-12-13 | 2024-05-07 | 南方电网数字电网研究院有限公司 | 磁敏感薄膜转移方法和磁敏感器件 |
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