CN102832531A - Visible laser - Google Patents
Visible laser Download PDFInfo
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- CN102832531A CN102832531A CN2012102028962A CN201210202896A CN102832531A CN 102832531 A CN102832531 A CN 102832531A CN 2012102028962 A CN2012102028962 A CN 2012102028962A CN 201210202896 A CN201210202896 A CN 201210202896A CN 102832531 A CN102832531 A CN 102832531A
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Abstract
A compact type visible laser structure comprises a pumping diode laser matrix, a laser diode beam shaping device, a laser crystal with two end faces thereof being properly coated, two distance pieces and a frequency doubling crystal with two end faces thereof being properly coated, wherein the distance pieces are used to keep a certain distance between the laser crystal and the frequency doubling crystal and to ensure the end faces connected through the distance pieces to maintain accurately parallel, and the laser crystal and the frequency doubling crystal are coated so as to form a laser resonator to fundamental waves, to raise pumping efficiency for a pumping wavelength, reduce cavity loss of the fundamental waves, and raise extraction efficiency of second harmonics wavelengths.
Description
Technical field
The present invention relates to based on intracavity frequency doubling art designs compact high efficient visible laser, need this laser in laser display, range measurement and field of medical.
Background technology
The technology that produces visible light based on frequency multiplication method is used widely.An example about frequency multiplication method discloses in " J.A.Armstrong et al., Physical Review, vol.127No.6, Sep.15,1962, pp.1918-1939 ".In this document, a kind of periodically frequency multiplier of farmland counter-rotating grating that adopts has been proposed, satisfy accurate phase matched (QPM) condition.Through in the QPM crystal, introducing angular frequency is the pump light of λ f, realizes frequency multiplication, has second harmonic frequency 2 λ with generation
fNew light.
For realizing high power compact visible laser efficiently, second harmonic generation (SH G) technology in the chamber has been proposed.A kind of method that is used to form SHG laser in the chamber is at document " No. the 4th, 953,166, the United States Patent (USP) of Mooradian etc.; The United States Patent (USP) of Mizuuchi etc. 7907646B2 number " the middle disclosure, shown in Fig. 1 (a).In the document, use a plurality of laser diodes 1 of the light of the pumping wavelength that sends 808nm to come laser crystal 3 (for example Nd:YVO4 crystal) is carried out pumping, to produce the first-harmonic of 1064nm wavelength.Then, through frequency multiplier 4 (PPLN for example: periodic polarized lithium niobate) first-harmonic is carried out frequency multiplication.The input end face 2 of laser crystal 3 has adopted the plated film that pumping wavelength is reduced reflection (AR) with the enhancing pumping efficiency, and has adopted (HR) plated film to fundamental frequency wavelength and the high reflection of second harmonic (frequency multiplication) wavelength light.The exit facet 5 of frequency multiplier has adopted grow tall reflection (HR) and to the plated film of the high transmission of frequency multiplication wavelength light (HT) of fundamental wave.
Reported method only provides and has adopted the general thought of laser diode as SHG laser structure in the chamber of pumping.Do not provide about keeping exactly parallel between the exit facet of the plane of incidence that how to make laser crystal and frequency-doubling crystal to form the description of efficient laserresonator.
The another kind of method that is used to form visible laser is at document: " the United States Patent (USP) 7724797B2 of Essaian; United States Patent (USP) the 2008/0174738th A1 of TAKEDA TAKASHI number with No. the 7149231st, the United States Patent (USP) of Afzal etc. " in open, shown in Fig. 1 (b).In these documents, be that a diode laser matrix 1 that can send the 808nm pump-wavelength light comes laser crystal 3 (Nd:YVO for example
4) carry out pumping, to produce the first-harmonic of 1064nm wavelength.Then, through frequency multiplier 4 (PPLN for example: periodic polarized lithium niobate) first-harmonic is carried out frequency multiplication.The plane of incidence 2 of laser crystal 3 has adopted the plated film that can reduce reflection (AR) to pumping wavelength, with the enhancing pumping efficiency, and has adopted the plated film to fundamental frequency wavelength and the high reflection of second harmonic (frequency multiplication) wavelength light (HR).The exit facet 5 of frequency multiplier has adopted the plated film to the plated film of fundamental frequency wavelength HR and the high transmission of frequency multiplication wavelength (HT).Laser crystal 3 combines with frequency multiplier 4 optical cements, to guarantee the plane of incidence 2 and exit facet 5 keeping parallelisms.
Reported method only provides about adopting diode laser matrix as pumping and adopt conjugate laser crystal of optical cement and frequency-doubling crystal respectively as a kind of general thought of SHG laser structure in the chamber of gain media and frequency multiplier.About how pump light being coupled into laser crystal efficiently, and how to realize that the high-output power of visible light does not then provide.
Another method that is used to form visible laser is open in document " European patent EP 2 192 443 A1 of Koyata Yasuharu ", shown in Fig. 1 (c).In the document, be that the diode laser matrix 1 that sends the 808nm pump-wavelength light comes plane wave conduction laser crystal 3 (being the Nd:YVO4 crystal) is carried out pumping, to produce the first-harmonic of 1064nm wavelength.Then, (be PPLN: the frequency multiplication of periodic polarized lithium niobate) realizing first-harmonic through plane wave conduction frequency multiplier 6.The plane of incidence 2 of laser crystal 3 has adopted the plated film that pumping wavelength is reduced reflection (AR), with the enhancing pumping efficiency, and to fundamental frequency wavelength and the high plated film that reflects (HR) of second harmonic (frequency multiplication) wavelength.The exit facet 4 of laser crystal 3 and the plane of incidence 5 of frequency multiplier 6 have all adopted fundamental frequency wavelength and frequency multiplication wavelength have been reduced the plated film that reflects (AR).The exit facet 7 of frequency multiplier has adopted to the plated film of fundamental frequency wavelength HR with to the plated film of the high transmission of frequency multiplication wavelength (HT).Keep certain clearance between laser crystal 3 and the frequency multiplier 6.
Reported method only provides about adopting diode laser matrix as pumping and adopt plane wave conduction laser crystal and frequency-doubling crystal respectively as the general thought of SHG laser structure in the chamber of gain media and frequency multiplier.About how pump light being imported laser crystal efficiently, and how to make and keep exactly parallel between end face 2 and the end face 7, then do not provide to satisfy the needs of efficient laser.
In addition, the another kind of method that is used to form visible laser is open in document " United States Patent (USP) of Shchegrov US7359420B2 number ", shown in Fig. 1 (d).In the document, be that the 1 pair of frequency multiplier 2 of extends perpendicular diode laser matrix that sends the pump-wavelength light of 1064nm (is PPLN: periodic polarized lithium niobate) carry out pumping.Then, frequency doubled light is derived through coupler 3.
Institute's reported method only provides about adopting the general thought of extends perpendicular diode laser matrix as SHG laser structure in the chamber of pumping.About how pump light being imported laser crystal efficiently, and how to adopt more cheap 808nm diode laser matrix, then do not provide as pump light source.
In addition, the another kind of method that is used to form visible laser is open in document " Kang Li, Proc of SPIE, Vol.7578, pp.1-6,2010 ", shown in Fig. 1 (e).In the document, be that (be PPLN: periodic polarized lithium niobate) carry out pumping, be the frequency multiplication ripple of 532nm to produce wavelength to the 1 pair of frequency multiplier 3 of diode laser matrix that sends the 1064nm pump-wavelength light.Pump light imports in the frequency multiplier 3 and derives respectively scioptics array 2 from frequency multiplier and accomplish with lens arra 4.Laserresonator is formed by coupling mirror 5.
Reported method only provides about adopting diode laser matrix as pumping and the general thought that adopts lens arra with SHG laser structure in the chamber of pump light importing/derivation frequency-doubling crystal.About how adopting more cheap 808nm diode laser matrix, then also undeclared as pump light source.
Summary of the invention
The object of the present invention is to provide and a kind ofly have the simple structure of improving efficient and realize low-cost compact visible laser based on SHG technology in the chamber.
(as shown in Figure 2) according to an aspect of the present invention, visible laser comprise diode laser matrix 1, beam shaping optical fiber 2, laser crystal 4 (for example Nd:YVO4), two distance pieces 6,7 and frequency-doubling crystal 9 (for example PPLN).The plane of incidence 3 of laser crystal 4 has adopted the plated film that pumping wavelength is reduced reflection (AR), and strengthening pumping efficiency, and adopted can be to the high plated film that reflects (HR) of fundamental frequency wavelength and second harmonic (frequency multiplication) wavelength.The exit facet 5 of laser crystal 4 and the plane of incidence 8 of frequency multiplier 9 have all adopted and can reduce the plated film that reflects (AR) to fundamental frequency wavelength and frequency multiplication wavelength.The exit facet 10 of frequency multiplier 9 has adopted can be to grow tall reflection (HR) and to the plated film of the high transmission of frequency multiplication wavelength (HT) of fundamental wave.Be connected with distance piece 7 through two identical distance parts 6 between laser crystal 4 and the frequency multiplier 9.
Description of drawings
From below in conjunction with the given detailed description of accompanying drawing this paper, the present invention will more fully be understood.
In the accompanying drawing:
Fig. 1 (a) is based on the sketch map of prior art of the visible laser structure of SHG method in the chamber.
Fig. 1 (b) is the sketch map based on the prior art of the visible laser structure of SHG method in the chamber that adopts diode laser matrix.
Fig. 1 (c) is the sketch map based on the prior art of the visible laser structure of SHG method in the chamber that adopts diode laser matrix and plate waveguide.
Fig. 1 (d) is the sketch map based on the prior art of the visible laser structure of SHG method in the chamber that adopts folded battle array diode laser matrix.
Fig. 1 (e) is the sketch map based on the prior art of the visible laser structure of SHG method in the chamber that adopts lens arra.
Fig. 2 is used to explain the sketch map according to first preferred embodiment of visible laser structure of the present invention.
Fig. 3 is used to explain the sketch map according to second preferred embodiment of visible laser structure of the present invention.
Fig. 4 is used to explain the sketch map according to the 3rd preferred embodiment of visible laser structure of the present invention.
Fig. 5 is used to explain the sketch map according to the 4th preferred embodiment of visible laser structure of the present invention.
Fig. 6 is used to explain the sketch map according to the 5th preferred embodiment of visible laser structure of the present invention.
Fig. 7 is used to explain the sketch map according to the 6th preferred embodiment of visible laser structure of the present invention.
Fig. 8 is used to explain the sketch map according to the 7th preferred embodiment of visible laser structure of the present invention.
Fig. 9 is used to explain the sketch map according to the 8th preferred embodiment of visible laser structure of the present invention.
Embodiment
Existing problem before the present invention solves through following means.
In first preferred embodiment, as shown in Figure 2, visible laser comprises diode laser matrix 1, beam shaping optical fiber 2, laser crystal 4 (for example Nd:YVO4), two distance pieces 6,7 and frequency-doubling crystal 9 (for example PPLN).The plane of incidence 3 of laser crystal 4 has adopted the plated film that can reduce reflection (AR) to pump-wavelength light, with the enhancing pumping efficiency, and can be to the plated film of fundamental frequency wavelength and the high reflection of second harmonic (SH) wavelength light (HR).The exit facet 5 of laser crystal 4 and the plane of incidence 8 of frequency multiplier 9 have all adopted and can reduce the plated film that reflects (AR) to fundamental frequency wavelength and frequency multiplication wavelength light.The exit facet 10 of frequency multiplier 9 has adopted fundamental frequency light is carried out high reflection (HR) and frequency doubled light carried out the plated film of high transmission (HT).Be connected with distance piece 7 through two identical distance parts 6 between laser crystal 4 and the frequency multiplier 9.
Connect through the identical distance pieces 6,7 of two thickness of use between laser crystal 4 and the frequency-doubling crystal 9; Guaranteed as long as the plane of incidence of laser crystal and frequency-doubling crystal is parallel with exit facet, just accurately parallel each other between the plane of incidence 3 of laser crystal 4 and the exit facet 10 of frequency multiplier 9.Because the plane of incidence 3 is accurately parallel with exit facet 10, and has adopted the plated film to the high reflection of fundamental frequency wavelength (for example 1064nm) (HR), so can form the laserresonator (laser cavity) of high Q value, this is vital for high efficiency laser.
According to first preferred embodiment; As shown in Figure 2; Pump light from the 808nm wavelength of diode laser matrix 1 efficiently is coupled in the laser crystal 4 (being Nd:YVO4) through beam shaping optical fiber 2, and the fundamental frequency light of 1064nm wavelength is produced efficiently and is limited to firmly in the laserresonator that is formed by the plane of incidence 3 and exit facet 10.Wavelength is that the frequency doubled light of 532nm is created in the laserresonator by frequency-doubling crystal 9.Because the plane of incidence 3 adopted the plated film to frequency multiplication wavelength HR, and exit facet 10 adopted the plated film to frequency multiplication wavelength HT, so the frequency doubled light that is produced can be from the outbound course high efficiency extraction of laser.In addition, because the laserresonator of this high Q value keeps by two distance pieces that are positioned at the crystal end 6,7, and have nothing to do, so the laser of being created also is suitable for higher power applications with luminous power.
In second preferred embodiment of the present invention, laser crystal 4 combines with frequency-doubling crystal 5 optical cements, and is as shown in Figure 3.In this structure, do not adopt distance piece.As long as between the plane of incidence of laser crystal and frequency-doubling crystal and the exit facet is parallel, combine relatively easily to realize parallel between the plane of incidence 3 and the end face 6 through the optical cement between two crystal.This structure is suitable for the low-power visible laser, and this is because the optical cement between laser crystal 4 and the frequency-doubling crystal 5 is combined under the high power and can breaks off.In order to guarantee to have used an optical fiber 2 near square shape from the light beam of each photophore of diode laser matrix 1, similar described in this and first preferred embodiment.
In the 3rd preferred embodiment of the present invention; As shown in Figure 4, visible laser comprises diode laser matrix 1, beam shaping optical fiber 2, laser crystal 4 (for example Nd:YVO4), two distance pieces 6,7, frequency-doubling crystal 9 (for example PPLN) and coupling mirror arrays 11.The plane of incidence 3 employings of laser crystal 4 reduce the plated film that reflects (AR) to pumping wavelength (being 808nm), with the enhancing pumping efficiency, and to fundamental frequency wavelength (being 1064nm) and the high plated film that reflects (HR) of second harmonic (frequency multiplication) wavelength (being 532nm).The exit facet 5 of laser crystal 4 and the incident/ exit facet 8 and 10 of frequency-doubling crystal 9 have all adopted fundamental frequency wavelength and frequency multiplication wavelength have been reduced the plated film that reflects (AR).Coupling mirror array 11 has adopted grow tall reflection (HR) and to the plated film of the high transmission of frequency multiplication wavelength (HT) of fundamental wave.The quantity of the mirror of coupling mirror array 11 is identical with diode laser matrix 1 with pitch.
In order to guarantee that light beam from each photophore of diode laser matrix 1 near foursquare shape, uses beam shaping optical fiber 2, similar described in this and first preferred embodiment.Gap between optical fiber 2 and the laser crystal 4 should be provided with as far as possible for a short time.
According to the 3rd preferred embodiment; As shown in Figure 4; 808nm wavelength pump light from diode laser matrix 1 is coupled into laser crystal 4 (being Nd:YVO4) efficiently through beam shaping optical fiber 2, and the fundamental frequency light of 1064nm wavelength is produced efficiently and is limited in firmly in the laserresonator that is formed by the plane of incidence 3 and coupling mirror array 11.Wavelength is that the frequency doubled light of 532nm is created in the laserresonator by frequency-doubling crystal 9.Because the plane of incidence 3 has adopted plated film and coupling mirror array 11 to frequency multiplication wavelength HR to adopt the plated film to frequency multiplication wavelength HT, so the frequency doubled light that is produced can be from the outbound course high efficiency extraction of laser.In addition, because the laserresonator of this high Q value keeps by two distance pieces that are positioned at the crystal end 6,7, and have nothing to do, so the laser of being created also is suitable for higher power applications with luminous power.In addition, owing to be the plano-concave laserresonator, so be easy to realize the laser steady running.
In the 5th preferred embodiment of the present invention, use stacked vertical formula diode laser matrix 1 as pump light source, and adopt thick laser crystal 4 and thick frequency-doubling crystal 6 respectively as gain medium and frequency multiplier, as shown in Figure 6.This structure can be seen the variation of first preferred embodiment of the invention as.Owing to be higher pump power, adopt structure of the present invention to realize even higher visible power.
In the 6th preferred embodiment of the present invention, adopt stacked vertical formula diode laser matrix 1 as pump light source, and adopt thick laser crystal 4 and thick frequency-doubling crystal 5 respectively as gain medium and frequency multiplier, as shown in Figure 7.This structure can be seen the variation of second preferred embodiment of the invention as.Owing to be higher pump power, adopt structure of the present invention can realize higher visible power.In addition, owing to be more photophore, better go spot property so resulting visible laser has, this application for laser writer is very important.
In the 7th preferred embodiment of the present invention, adopted the replaceable laser crystal of plane of crystal fluting, as shown in Figure 8.The purpose of fluting is to form ridge, in laserresonator, merges or crosstalks to prevent adjacent beams.Can form these grooves through patterning method.Those of the diode laser matrix that is adopted in the quantity of ridge and pitch and the aforementioned preferred embodiments are identical.
In the 8th preferred embodiment of the present invention, adopted the another kind of laser crystal of fluting, and adopted heat-conducting layer on the surface of crystal, as shown in Figure 9.The purpose of fluting is to form ridge, in laserresonator, merges or crosstalks to prevent adjacent beams.Use heat-conducting layer in the laser works process, the heat on the laser crystal to be eliminated efficiently.Those of the diode laser matrix that is adopted in the quantity of ridge and pitch and the aforementioned preferred embodiments are identical.
The foregoing description has been described and has been adopted the visible laser of Nd:YVO4 as laser crystal.Certainly, the method for the invention can also be used for other laser materials, like Nd:YAG etc.
The foregoing description has been described and has been adopted the visible laser of PPLN as frequency-doubling crystal.Certainly, the method for the invention can also be used for other frequency-doubling crystals, like PPLT, PPKTP etc.
The foregoing description has been described employing SHG and has been produced visible light.Certainly, the method for the invention can also be applied to wait and produce other light based on OPO (optical parametric oscillator), SFG (with frequency spectrum), DFG (difference frequency spectrum).
The foregoing description has been described through on a surface of laser crystal, introducing groove and has been retrained laser beam and eliminate heat.Certainly, also can be at other surface flutings of laser crystal.
The foregoing description has been described through retraining laser beam and eliminate heat at the laser crystal internal recessing.Certainly, also can be at the frequency-doubling crystal internal recessing.
Claims (14)
1. visible laser comprises pump laser diode array, laserresonator and has the frequency-doubling crystal of conjugate laser crystal.
2. a visible laser comprises pump laser diode array, laserresonator, the frequency-doubling crystal with conjugate laser crystal and coupling mirror array.
3. visible laser comprises stacked vertical formula pump laser diode array, laserresonator and has the thick frequency-doubling crystal of conjugate laser crystal.
4. a visible laser comprises stacked vertical formula pump laser diode array, laserresonator, the thick frequency-doubling crystal with conjugate laser crystal and coupling mirror array.
5. according to each described visible laser in the claim 1 to 4, have beam shaping element in the said diode laser matrix, said beam shaping element is connected on the exit facet of said diode laser matrix.
6. according to each described visible laser in the claim 1 to 4, said frequency-doubling crystal/thick frequency-doubling crystal directly is combined on laser crystal/thick laser crystal.
7. according to each described visible laser in the claim 1 to 4, said frequency-doubling crystal/thick frequency-doubling crystal is combined on laser crystal/thick laser crystal through two identical distance parts.
8. according to claim 6 or 7 described visible lasers, the plane of incidence of said laser crystal/thick laser crystal has adopted the plated film that pumping wavelength is reduced reflection, and to fundamental frequency wavelength and the high plated film that reflects of harmonic wavelength.
9. according to claim 6 or 7 described visible lasers, the exit facet of said frequency-doubling crystal/thick frequency-doubling crystal has adopted the grow tall plated film of reflection of fundamental wave, and to the plated film of the high transmission of harmonic wavelength.
10. visible laser according to claim 7, the exit facet of said laser crystal/thick laser crystal have adopted fundamental frequency wavelength and harmonic wavelength have been reduced the plated film that reflects.
11. visible laser according to claim 7, the plane of incidence of said frequency-doubling crystal/thick frequency-doubling crystal have adopted fundamental frequency wavelength and harmonic wavelength are reduced the plated film that reflects.
12. according to claim 2 or 4 described visible lasers, has adopted the grow tall plated film of reflection of fundamental wave on the input surface of said coupling mirror array, and to the plated film of the high transmission of harmonic wavelength.
13. visible laser according to claim 12, said coupling mirror array comprises a plurality of curved mirrors, and the quantity of said a plurality of curved mirrors requires the diode laser matrix in 2 identical with pitch and aforesaid right.
14. visible laser according to claim 12, said coupling mirror array comprises a plurality of curved mirrors of two-dimensional arrangement, and the quantity of said a plurality of curved mirrors and pitch are identical with stacked vertical formula diode laser matrix in the claim 4.
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US201161498197P | 2011-06-17 | 2011-06-17 | |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104638504A (en) * | 2015-03-05 | 2015-05-20 | 中国科学院光电研究院 | Multi-path output laser |
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US5441803A (en) * | 1988-08-30 | 1995-08-15 | Onyx Optics | Composites made from single crystal substances |
US5539765A (en) * | 1994-03-03 | 1996-07-23 | The University Court Of The University Of St. Andrews | High efficiency laser |
CN101005189A (en) * | 2006-12-05 | 2007-07-25 | 上海艾敦光电子材料有限公司 | Micro sheet structure blue light laser |
CN201845992U (en) * | 2010-10-29 | 2011-05-25 | 北京中视中科光电技术有限公司 | Surface mount type solid laser |
CN102089943A (en) * | 2008-05-08 | 2011-06-08 | 奥兰若光子公司 | High brightness diode output methods and devices |
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2012
- 2012-06-18 CN CN2012102028962A patent/CN102832531A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US5441803A (en) * | 1988-08-30 | 1995-08-15 | Onyx Optics | Composites made from single crystal substances |
US5539765A (en) * | 1994-03-03 | 1996-07-23 | The University Court Of The University Of St. Andrews | High efficiency laser |
CN101005189A (en) * | 2006-12-05 | 2007-07-25 | 上海艾敦光电子材料有限公司 | Micro sheet structure blue light laser |
CN102089943A (en) * | 2008-05-08 | 2011-06-08 | 奥兰若光子公司 | High brightness diode output methods and devices |
CN201845992U (en) * | 2010-10-29 | 2011-05-25 | 北京中视中科光电技术有限公司 | Surface mount type solid laser |
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CN104638504A (en) * | 2015-03-05 | 2015-05-20 | 中国科学院光电研究院 | Multi-path output laser |
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Application publication date: 20121219 |