CN102832272B - Indium Gallium Nitride (InGaN) solar cell and manufacture method thereof - Google Patents
Indium Gallium Nitride (InGaN) solar cell and manufacture method thereof Download PDFInfo
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- CN102832272B CN102832272B CN201210319268.2A CN201210319268A CN102832272B CN 102832272 B CN102832272 B CN 102832272B CN 201210319268 A CN201210319268 A CN 201210319268A CN 102832272 B CN102832272 B CN 102832272B
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Abstract
The invention discloses an Indium Gallium Nitride (InGaN) solar cell and a manufacture method thereof. The InGaN solar cell comprises a substrate and an N-type ohmic contact electrode, wherein a GaN buffer layer is formed on the substrate; an N-type GaN ohmic contact layer is formed on the GaN buffer layer; an intrinsic InGaN absorbing layer is formed on one side of the N-type GaN ohmic contact layer; a table top is formed on the other side of the N-type GaN ohmic contact layer; a GaN protection layer is formed on the intrinsic InGaN absorbing layer; a P-type GaN layer is formed on the low-temperature GaN protection layer; a P-type GaN ohmic contact layer is formed on the P-type GaN layer; a current extension layer is formed on the P-type GaN ohmic contact layer; a P-type ohmic contact electrode is manufactured on the current extension layer; and the N-type ohmic contact electrode is manufactured on table top of the N-type GaN ohmic contact layer. The InGaN solar cell has the advantage of improving the efficiency of the InGaN solar cell.
Description
Technical field
The present invention relates to technical field of semiconductor device, particularly InGaN solar cell and preparation method thereof.
Background technology
As third generation semiconductor, gallium nitride (GaN) and series material (comprising aluminium nitride, aluminum gallium nitride, indium gallium nitrogen, indium nitride) is large with its energy gap, spectral region is wide (covering from ultraviolet to infrared full-wave section), heat-resisting quantity and good corrosion resistance, has huge using value in optoelectronics and microelectronics domain.Current research finds, the room temperature energy gap of InN material is defined as present 0.7eV by 1.89eV before, the band gap of the ternary alloy three-partalloy InGaN made regulates near infrared spectrum region continuously to ultraviolet spectral region, and the absorption coefficient of nitride alloy near band edge is up to 105cm-1 magnitude, InGaN absorbed layer is made to absorb most incident light in hundreds of nanometer range, the InGaN Alloy Heterojunction structure of different I n component can be utilized in theory, design a more piece solar cell, realize the needs meeting efficient solar cell under an epitaxial system.In addition, InGaN alloy has good capability of resistance to radiation, is applicable to very much as space solar cell material.Therefore, InGaN has the advantage being obviously better than other semi-conducting materials in area of solar cell.
The very large progress obtained in InGaN solar cell in the world at present, develop the unit component of a variety of structure, but due to InGaN quality of material grown problem, make the efficiency of solar cell all very low (being less than 3%).
Summary of the invention
The object of the invention is to propose a kind of InGaN solar cell and preparation method thereof, it has the advantage improving InGaN solar battery efficiency.
The present invention proposes a kind of InGaN solar cell, comprising:
One substrate;
One GaN resilient coating, this GaN resilient coating is produced on substrate;
One N-type GaN ohmic contact layer, this N-type GaN ohmic contact layer is produced on GaN resilient coating;
One eigen I nGaN absorbed layer, this eigen I nGaN absorbed layer is produced on the side above N-type GaN ohmic contact layer, and the opposite side of N-type GaN ohmic contact layer forms a table top;
One GaN protective layer, this GaN protective layer is produced on eigen I nGaN absorbed layer;
One P type GaN layer, this P type GaN layer is produced on low temperature GaN protective layer;
One P type GaN ohmic contact layer, this P type GaN ohmic contact layer is produced in P type GaN layer;
One current extending, this current extending is produced in P type GaN ohmic contact layer;
One P type Ohm contact electrode, this P type Ohm contact electrode is produced on current extending;
One N-type Ohm contact electrode, this N-type Ohm contact electrode is produced on the table top of N-type GaN ohmic contact layer.
The present invention also provides a kind of manufacture method of InGaN solar cell, comprises the following steps:
Step 1: grind equipment growing GaN resilient coating, N-type GaN ohmic contact layer, eigen I nGaN absorbed layer, GaN protective layer, P type GaN layer and P type GaN ohmic contact layer successively outside utilizing on substrate;
Step 2: the side on P type GaN ohmic contact layer etches downwards, etching depth arrives the surface of N-type GaN ohmic contact layer, makes the surperficial side of N-type GaN ohmic contact layer form table top;
Step 3: evaporation current extending in P type GaN ohmic contact layer;
Step 4: make P type Ohmic electrode on current extending;
Step 5: make N-type Ohmic electrode on the table top of N-type GaN ohmic contact layer, complete the making of solar cell.
The invention has the beneficial effects as follows: GaN protective layer can protect eigen I nGaN absorbed layer, improve the absorption efficiency of battery
Accompanying drawing explanation
In order to further illustrate content of the present invention, be described in detail as follows below in conjunction with instantiation and accompanying drawing, wherein:
Fig. 1 is the structural representation of the InGaN solar cell that the present invention proposes.
Fig. 2 is preparation flow figure of the present invention.
Fig. 3 is the InGaN solar cell that proposes of the present invention and common InGaN external quantum efficiency of solar battery curve chart.
Embodiment
Refer to shown in Fig. 1, the invention provides a kind of InGaN solar cell, comprising:
One substrate 1, wherein the material of this substrate 1 is sapphire, silicon, carborundum, gallium nitride or GaAs; GaN resilient coating 2, this GaN resilient coating 2 makes on substrate 1, and thickness is 25 nanometers;
One N-type GaN ohmic contact layer 3, this N-type GaN ohmic contact layer 3 is produced on GaN resilient coating 2; Thickness is 3 microns, and electron concentration is 3 × 10
18cm
-3;
One eigen I nGaN absorbed layer 4, this eigen I nGaN absorbed layer 4 is produced on the side above N-type GaN ohmic contact layer 3, and the thickness making the opposite side of N-type GaN ohmic contact layer 3 form table top 31, an eigen I nGaN absorbed layer 4 is 150 nanometers, and electron concentration is 8 × 10
16cm
-3;
One GaN protective layer 5, this GaN protective layer 5 is produced on eigen I nGaN absorbed layer 4, and the growth temperature of described GaN protective layer 5 is 700-800 DEG C, and thickness is 5nm-10nm; The growth temperature of this GaN protective layer 5 is identical with the growth temperature of eigen I nGaN absorbed layer 4;
One P type GaN layer 6, this P type GaN layer 6 is produced on low temperature GaN protective layer 5, and thickness is 150nm, and hole concentration is 5 × 10
17cm
-3;
One P-GaN ohmic contact layer 7, this doping P-GaN ohmic contact layer 7 is produced in P type GaN layer 6, and thickness is 30nm, and hole concentration is 1 × 10
18cm
-3;
One current extending 8, this current extending 8 is produced on doping P-GaN ohmic contact layer 7, and the material of current extending can be Ni/Au or ITO material;
One P type Ohm contact electrode 9, this P type Ohm contact electrode 9 is produced on current extending 8, and the shape of described P type Ohm contact electrode 9 is dots structure or loop configuration;
One N-type Ohm contact electrode 10, this N-type Ohm contact electrode 10 is produced on the table top 31 of N-type GaN ohmic contact layer 3, and the shape of described N-type Ohm contact electrode 10 is dots structure or loop configuration.
The solar cell of this structure inserts one deck GaN protective layer 5 between eigen I nGaN absorbed layer 4 and p-type GaN6.Because the temperature growing p-type GaN layer 6 is higher than the temperature of eigen I nGaN absorbed layer 4, therefore, when growth p-type GaN layer 6, high temperature can make In in eigen I nGaN absorbed layer 4 resolve attached, reduce In component, on the other hand, high temperature can make eigen I nGaN absorbed layer Stress Release, thus produces relaxation phenomena.Finally, threading dislocation density high in eigen I nGaN absorbed layer can extend to p-type GaN layer, and like this, the dislocation density in p-type GaN layer also can be very high, makes the reverse leakage current of device very large.Therefore, in a kind of InGaN solar battery structure that the present invention proposes, one deck GaN protective layer between eigen I nGaN absorbed layer and between p-type GaN, is inserted.The growth temperature of this layer is identical with the growth temperature of InGaN, and thickness is 5-10nm.So just can protect eigen I nGaN absorbed layer to a certain extent not by the impact of high growth temperature p-type GaN; simultaneously; GaN protective layer can stop the threading dislocation in eigen I nGaN absorbed layer to extend to p-GaN layer, improves the quality of p-type GaN layer, thus improves the performance of battery.
Referring to Fig. 2 and combining consults shown in Fig. 1, and the present invention also provides a kind of manufacture method of InGaN solar cell, comprises the following steps:
Step 1: utilize on substrate 1 outer grind equipment successively growth thickness be the P type GaN ohmic contact layer 7 of P type GaN layer 6 and 30 nanometer of the eigen I nGaN absorbed layer 4 of N-type GaN ohmic contact layer 3,150 nanometer of the GaN resilient coating 2,3 microns of 25 nanometers, GaN protective layer 5,150 nanometer of 5-10 nanometer, wherein the material of substrate 1 is sapphire, silicon, carborundum, gallium nitride or GaAs, the growth temperature of described GaN protective layer 5 is 700-800 DEG C, and thickness is 5nm-10nm; The growth temperature of this GaN protective layer 5 is identical with the growth temperature of eigen I nGaN absorbed layer 4;
Step 2: the side on P type GaN ohmic contact layer 7 etches downwards, etching depth arrives the surface of N-type GaN ohmic contact layer 3, makes the surperficial side of N-type GaN ohmic contact layer 3 form a table top 31;
Step 3: evaporation current extension layer 8 in P type GaN ohmic contact layer 7;
Step 4: make P type Ohmic electrode 9 on current extending 8, the shape of described P type Ohm contact electrode 9 is dots structure or loop configuration;
Step 5: make N-type Ohmic electrode 10 on the table top 31 of N-type GaN ohmic contact layer 3, the shape of described N-type Ohm contact electrode 10 is dots structure or loop configuration, completes the making of solar cell.
We test the external quantum efficiency of the InGaN solar cell that the present invention proposes and illumination IV, and compare with common InGaN solar cell.
Fig. 3 is the external quantum efficiency curve chart of two devices.Wherein dotted line represents that we invent the external quantum efficiency of the InGaN solar cell of proposition, and solid line represents the external quantum efficiency of common InGaN solar cell.
Solar cell of the present invention inserts one deck low temperature GaN protective layer between eigen I nGaN absorbed layer and between p-type GaN.Add external quantum efficiency and short circuit current that GaN protection solar cell layer by layer can improve device, improve photoelectric conversion efficiency.
The above; be only the embodiment in the present invention, but protection scope of the present invention is not limited thereto, any people being familiar with this technology is in the technical scope disclosed by the present invention; the conversion that can expect easily or replacement, all should be encompassed in of the present invention comprising within scope.Therefore, protection scope of the present invention should be as the criterion with the protection range of claims.
Claims (8)
1. an InGaN solar cell, comprising:
One substrate;
One GaN resilient coating, this GaN resilient coating is produced on substrate;
One N-type GaN ohmic contact layer, this N-type GaN ohmic contact layer is produced on GaN resilient coating;
One eigen I nGaN absorbed layer, this eigen I nGaN absorbed layer is produced on the side above N-type GaN ohmic contact layer, and the opposite side of N-type GaN ohmic contact layer forms a table top;
One GaN protective layer, this GaN protective layer is produced on eigen I nGaN absorbed layer;
One P type GaN layer, this P type GaN layer is produced on low temperature GaN protective layer;
One P type GaN ohmic contact layer, this P type GaN ohmic contact layer is produced in P type GaN layer;
One current extending, this current extending is produced in P type GaN ohmic contact layer;
One P type Ohm contact electrode, this P type Ohm contact electrode is produced on current extending;
One N-type Ohm contact electrode, this N-type Ohm contact electrode is produced on the table top of N-type GaN ohmic contact layer.
2. InGaN solar cell according to claim 1, the material of wherein said substrate is sapphire, silicon, carborundum, gallium nitride or GaAs.
3. InGaN solar cell according to claim 1, wherein the growth temperature of GaN protective layer is 700-800 DEG C, and thickness is 5nm-10nm; The growth temperature of this GaN protective layer is identical with the growth temperature of eigen I nGaN absorbed layer.
4. InGaN solar cell according to claim 1, wherein said P type Ohm contact electrode and the shape of N-type Ohm contact electrode are dots structure or loop configuration.
5. a manufacture method for InGaN solar cell, comprises the following steps:
Step 1: utilize epitaxial device growing GaN resilient coating, N-type GaN ohmic contact layer, eigen I nGaN absorbed layer, GaN protective layer, P type GaN layer and P type GaN ohmic contact layer successively on substrate;
Step 2: the side on P type GaN ohmic contact layer etches downwards, etching depth arrives the surface of N-type GaN ohmic contact layer, makes the surperficial side of N-type GaN ohmic contact layer form table top;
Step 3: evaporation current extending in P type GaN ohmic contact layer;
Step 4: make P type Ohmic electrode on current extending;
Step 5: make N-type Ohmic electrode on the table top of N-type GaN ohmic contact layer, complete the making of solar cell.
6. the manufacture method of InGaN solar cell according to claim 5, the material of wherein said substrate is sapphire, silicon, carborundum, gallium nitride or GaAs.
7. the manufacture method of InGaN solar cell according to claim 5, wherein the growth temperature of GaN protective layer is 700-800 DEG C, and thickness is 5nm-10nm; The growth temperature of this GaN protective layer is identical with the growth temperature of eigen I nGaN absorbed layer.
8. the manufacture method of InGaN solar cell according to claim 5, wherein said P type Ohm contact electrode and the shape of N-type Ohm contact electrode are dots structure or loop configuration.
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|---|---|---|---|
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| CN201210319268.2A CN102832272B (en) | 2012-08-31 | 2012-08-31 | Indium Gallium Nitride (InGaN) solar cell and manufacture method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018129353A1 (en) | 2017-01-05 | 2018-07-12 | Brilliant Light Power, Inc. | Extreme and deep ultraviolet photovoltaic cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105552149B (en) * | 2015-11-16 | 2017-09-29 | 华南师范大学 | High In ingredient InGaN/GaN quantum well structures solar cell and its preparation method based on Free-standing GaN substrate |
| CN108598192A (en) * | 2018-05-15 | 2018-09-28 | 中国科学院半导体研究所 | InGaN/GaN heteroepitaxial structures and its growing method |
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| JP2009111019A (en) * | 2007-10-26 | 2009-05-21 | Chiba Univ | Electronic element of microcrystal structure nitride semiconductor controlling orientation of crystal axis and facet (crystal plane) |
| CN102005513A (en) * | 2009-08-28 | 2011-04-06 | 上海蓝宝光电材料有限公司 | GaN light-emitting diodes with low-temperature p-type GaN layer |
| CN102290493A (en) * | 2011-09-05 | 2011-12-21 | 中国电子科技集团公司第十八研究所 | Preparation method of p-i-n type single-junction InGasN solar battery |
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Patent Citations (3)
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| JP2009111019A (en) * | 2007-10-26 | 2009-05-21 | Chiba Univ | Electronic element of microcrystal structure nitride semiconductor controlling orientation of crystal axis and facet (crystal plane) |
| CN102005513A (en) * | 2009-08-28 | 2011-04-06 | 上海蓝宝光电材料有限公司 | GaN light-emitting diodes with low-temperature p-type GaN layer |
| CN102290493A (en) * | 2011-09-05 | 2011-12-21 | 中国电子科技集团公司第十八研究所 | Preparation method of p-i-n type single-junction InGasN solar battery |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2018129353A1 (en) | 2017-01-05 | 2018-07-12 | Brilliant Light Power, Inc. | Extreme and deep ultraviolet photovoltaic cell |
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| CN102832272A (en) | 2012-12-19 |
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