CN102820315A - Direct-light-emitting-type micro display array device and preparation method thereof - Google Patents
Direct-light-emitting-type micro display array device and preparation method thereof Download PDFInfo
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- CN102820315A CN102820315A CN2012102973853A CN201210297385A CN102820315A CN 102820315 A CN102820315 A CN 102820315A CN 2012102973853 A CN2012102973853 A CN 2012102973853A CN 201210297385 A CN201210297385 A CN 201210297385A CN 102820315 A CN102820315 A CN 102820315A
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Abstract
The invention relates to a direct-light-emitting-type micro display array device and a preparation method thereof. A display array comprises a substrate epitaxial wafer, semiconductor matrix isolating regions, electron-type conducting layers, light emitting layers, hole-type conducting layers, electron-type conducting electrodes, hole-type conducting electrodes, isolating protection layers, anode lines and cathode lines. The preparation method comprises the steps of: etching an epitaxial layer by adopting a dry-process etching method to obtain the electron-type conducting layers and form a plurality of array units; implanting ions into the electron-type conducting layers till to a substrate by adopting an ion implantation method to realize isolation of adjacent units and obtain the semiconductor matrix isolating regions; evaporating metal through electron beams to form the electron-type conducting electrodes and leading out the cathode lines; depositing the isolating protection layers through PECVD (Plasma Enhanced Chemical Vapor Deposition); and evaporating metal through electron beams to form the hole-type conducting electrodes and leading out the cathode lines, wherein regions formed by the anode lines and the cathode lines which are spatially intersected are display pixels.
Description
Technical field
The invention belongs to field of semiconductor illumination, be specifically related to little array of display device of a kind of direct light emitting-type and preparation method thereof.
Technical background
The continuous improvement of Along with people's material and cultural life, people are also increasingly high to the requirement of Display Technique.Light-emitting diode (LED) has total solids, luminous efficiency advantages of higher, all begins to be applied to show and lighting field.The semi-conducting material that is used for solid state lighting mainly is the compound of III-V family, and the solid-state light illuminating device that wherein is the basis with GaN system and AlGaInP based material also has advantages such as volume is little, the life-span is long, power is low.LED is obtaining using widely aspect the full color demonstration video picture device, and therefore the development of Display Technique also rises.Provided the manufacturing approach of AlGaInP-LED micro-display device in the patent of invention 200720093946.2; Realize LED luminescent layer and euphotic cutting apart through isolation channel about the ICP technology etching, but the many shortcomings that exist make it not be applied to the actual industrial production field as yet.Along with semiconductor process techniques is growing, ion injects the main method that has become device isolation, and the present invention utilizes this technology to realize the isolation between the LED individual chips.
The key technology of array of display device preparation is the isolation of device, realizes isolating injecting through dry etching table top or ion and realizes.At present, the isolation of device mainly realizes through dry etching, yet can bring some problems through the mesa structure of dry etching: cross the metal that can cause deeply climbing like step and rupture easily; If resilient coating insulation property missionary society causes electric leakage.Physical effects such as the peculiar spontaneous polarization of III-V material, piezoelectric polarization are very responsive to the device interfaces characteristic simultaneously, therefore limited the application of technologies such as conventional ICP in the preparation of high density array of display.Compare with dry etching, ion injects can realize the complanation structure, and helps realizing highdensity array of display.Ion injects and has been widely used in the HEMT device; And a large amount of reports show that ion implantation technology can obtain good isolation; Therefore help realizing the high density array of display, thereby obtain the display device of high pixel, also avoided the electric leakage problem that dry etching brought simultaneously.
Summary of the invention
Realize isolating the shortcoming and defect of being brought for solving dry etching; The present invention proposes ion and injects the method that realizes the little array of display device preparation of a kind of direct light emitting-type; Not only avoid the electric leakage problem, simplified preparation technology, practiced thrift cost; Improve the reliability of device, can realize more highdensity array of display device simultaneously.
The present invention adopts following technical scheme for realizing above-mentioned purpose:
The little array of display of a kind of direct light emitting-type of the present invention is characterized in that comprising epitaxial wafer, semiconductor matrix unit, semiconductor matrix isolated area, n type conductive layer, luminescent layer, p type conductive layer, n electrode, p electrode, isolated protective layer, anode line, cathode line; On epitaxial wafer, adopt dry etching method, etched portions to n type conductive layer forms a plurality of matrix units; On the n type conductive layer that etching is exposed, inject ion,, form high resistance area until the epitaxial wafer substrate; Obtain semiconductor matrix isolated area, on the n type conductive layer of semiconductor matrix unit the n electrode is set, each n electrode links to each other and constitutes cathode line; On on the p type conductive layer, carry out photoetching or etching, obtain the cavity type conductive through hole, outside p type conductive layer through hole, isolated protective layer is set; On the p type conductive layer of matrix unit the p electrode is set, each p electrode links to each other and constitutes anode line.
Said matrix unit structure comprises n type conductive layer, luminescent layer, p type conductive layer.
Said semiconductor matrix isolated area is between n type conductive layer and substrate, simultaneously between n electrode and matrix unit.
Said n electrode is between matrix unit and matrix isolated area, and the p electrode is positioned at matrix unit.
The zone that spatially intersects of said anode line and cathode line is a display pixel.
The preparation method of the little array of display of a kind of direct light emitting-type comprises the steps:
1) cleans epitaxial wafer;
2) dry etching part epitaxial wafer to n type conductive layer forms a plurality of semiconductor matrix units;
3) on the n type conductive layer that etching is exposed, inject ion,, form high resistance area, obtain semiconductor matrix isolated area until substrate;
4) depositing metal on n type conductive layer forms the n electrode, and each n electrode links to each other and constitutes cathode line;
5) on whole epitaxial wafer with PECVD deposit isolated protective layer;
6) photoetching or dry etching p type conductive layer obtain p type conductive layer through hole, and maximum is no more than the area of matrix unit the top p type conductive layer;
7) depositing metal on the p type conductive layer that obtains forms the p electrode.Each p electrode links to each other and constitutes anode line;
Preferably, the resistance of said matrix isolated area is minimum reaches 10
11Ω.
Preferably, the material of said isolated protective layer is insulation conductive layers such as SiO2 or SiNx or polyimides, optimal selection SiO2.
Preferably, said anode line and cathode line are distributed in the two ends solder joint that is crisscross arranged.
The present invention has following advantage:
1) the present invention adopts the method for ion injection to realize isolation, has avoided dry etching to realize isolating the electric leakage problem of bringing.Realize the plane isolation structure, replaced traditional mesa-isolated.Reduce the step of dry etching, reduced cost, improved the stability of technology and the reliability of device, realized that the high density array of display is integrated, improved the pixel of array of display greatly.
2) method for arranging of anode line of the present invention and cathode line two end pads has reduced the electrode congested problem that produces in the depositing metal technical process, has practiced thrift the space, is easy to realize the high density array of display.
In little array of display device of a kind of direct light emitting-type of the present invention and preparation method thereof, adopt concrete example that principle of the present invention and execution mode are set forth, the explanation of above structure and embodiment just is used for helping to understand method of the present invention and core concept.Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from core concept of the present invention, can also carry out some improvement and modification to the present invention, these improvement and modification also fall in the protection range of claim of the present invention.
Description of drawings
Below in conjunction with accompanying drawing the present invention is further specified.
Fig. 1 is the array of display profile that existing dry etch process realizes isolation.
Fig. 2 is the array of display domain that existing dry etch process realizes isolation.
Fig. 3 is that ion of the present invention injects the array of display profile of realizing isolation.
Fig. 4 is that ion of the present invention injects the array of display domain of realizing isolation.
Fig. 5 is that direct light emitting-type array of display drives sketch map.
Among the figure: the 1st, epitaxial wafer; The 2nd, semiconductor matrix isolated area; The 3rd, n type conductive layer; The 4th, luminescent layer; The 5th, p type conductive layer; The 6th, the n electrode; The 7th, the p electrode; The 8th, isolated protective layer; The 9th, anode line; The 10th, cathode line; The 11st, p type conductive layer through hole; The 12nd, carve to n type conductive layer; The 13rd, carve to the luminous zone; The 14th, carve to substrate; The 15th, the isolated protective layer border; The 16th, display pixel; The 17th, the semiconductor matrix unit; The 18th, substrate.
Embodiment
To combine accompanying drawing to set forth the luminous array of display of the direct type of the present invention in detail below:
Shown in Fig. 3 to 5; The little array of display of a kind of direct light emitting-type of the present invention is characterized in that comprising epitaxial wafer 1, semiconductor matrix unit 17, semiconductor matrix isolated area 2, n type conductive layer 3, luminescent layer 4, p type conductive layer 5, n electrode 6, p electrode 7, isolated protective layer 8, anode line 9, cathode line 10; On epitaxial wafer 1, adopt dry etching method, etched portions to n type conductive layer 3 forms a plurality of semiconductor matrix units 17; On the n type conductive layer 3 that etching is exposed, inject ion,, form high resistance area until substrate; Obtain semiconductor matrix isolated area 2, on the n type conductive layer 3 of semiconductor matrix unit n electrode 6 is set, each n electrode 6 links to each other and constitutes cathode line 10; Carrying out photoetching or etching on 5 on the p type conductive layer, obtaining cavity type conductive through hole 11, outside p type conductive layer through hole 11, isolated protective layer 8 is being set; On the p type conductive layer 5 of matrix unit p electrode 7 is set, each p electrode 7 links to each other and constitutes anode line 9.
Said matrix unit structure comprises n type conductive layer, luminescent layer, p type conductive layer.
Said semiconductor matrix isolated area is between n type conductive layer and substrate, simultaneously between n electrode and matrix unit.
Said n electrode is between matrix unit and matrix isolated area, and the p electrode is positioned at matrix unit.
The intersection point of said anode line and cathode line is a display pixel.
The inventive method adopts dry method ICP to etch n type conductive layer table top earlier, obtains matrix unit, forms array.Utilize ion implantation; On the n type conductive layer table top that exposes and near a side of p type conductive layer, inject ion; In order to come insulating between the adjacent independent matrix unit, the zone that ion injects begins to arrive the edge of adjacency matrix unit from n type electrode edge.Electron beam evaporation metal Ti/Al/Ti/Au, and adopt and to peel off and rapid thermal anneal process forms n type ohmic contact, and draws cathode line at two ends, is used for external display driver circuit negative pole.With PECVD deposit SiO2, protective side wall prevents that luminescent layer from exposing on the one hand on whole epitaxial wafer, causes the short circuit electric leakage; On the other hand, cover the part position on the p type conductive layer, play the passivation protection effect.Adopt photoetching or ICP technology, carve through hole at p type conductive layer surface, the place beyond this through hole all is coated with SiO2.The electron beam evaporation metal Ni/Au in p type conductive layer through hole, and adopt and to peel off and annealing process forms p type ohmic contact, and draws anode line endways, and it is anodal to be used for external display driver circuit.From domain, anode line and cathode line are crisscross, and interlaced area is a display pixel.
Preferably, the resistance of said matrix isolated area is minimum reaches 10
11Ω.
Preferably, the material of said isolated protective layer is insulation conductive layers such as SiO2 or SiNx or polyimides, optimal selection SiO2.
Preferably, said anode line and the cathode line two ends solder joint that is crisscross arranged.
To combine accompanying drawing to set forth the luminous array of display preparation of devices of the direct type of the present invention method in detail below:
1. clean epitaxial wafer 1, as shown in Figure 3.
2.PECVD deposit SiO2 layer is as mask layer, ICP dry etching epitaxial wafer exposes n type conductive layer 3, forms a plurality of semiconductor matrix units 17.
3. in the n type conductive layer right side of exposing, and be close to the left side edge part of matrix unit, inject ion, the zone that ion injects begins to arrive substrate from n type conductive layer surface, obtains the high resistant zone, forms semiconductor matrix isolated area 2.
4. deposited by electron beam evaporation method depositing metal Ti/Al/Ti/Au on n type conductive layer; And adopt lift-off technology and rapid thermal anneal process to form good n type ohmic contact; Obtain n electrode 6, each n electrode 6 links to each other and constitutes cathode line 10, is used for the external drive circuit negative pole.
5. on above each parts, adopt PECVD deposit SiO2, as isolated protective layer.
6. with photoresist as mask, photoetching finishes p type conductive layer, obtains p type conductive layer through hole 11.
7. on p type conductive layer through hole; Deposited by electron beam evaporation method depositing metal Ni/Au; And adopt lift-off technology and rapid thermal anneal process to form good p type ohmic contact to form p electrode 7, each p electrode 7 formation anode lines 9 that link to each other are used for the external drive circuit positive pole.
Claims (9)
1. the little array of display of direct light emitting-type is characterized in that comprising epitaxial wafer (1), semiconductor matrix unit (17), semiconductor matrix isolated area (2), n type conductive layer (3), luminescent layer (4), p type conductive layer (5), n electrode (6), p electrode (7), isolated protective layer (8), anode line (9), cathode line (10); Epitaxial wafer (1) comprises substrate (18), and n type conductive layer (3), luminescent layer (4), the cavity type conductivity type (5) of on substrate (18), growing successively, goes up at epitaxial wafer (1) and adopts dry etching method; Etching is deep to n type conductive layer (3); Form a plurality of semiconductor matrix units (17), described semiconductor matrix unit (17) is made up of the part that does not etch into n type conductive layer (3), goes up the injection ion at the n type conductive layer (3) that etching is exposed; Iontophoretic injection is until substrate (18); Form high resistance area, obtain semiconductor matrix isolated area (2), on the n type conductive layer (3) of semiconductor matrix unit (17) n electrode (6) is set; Each n electrode (6) links to each other and constitutes cathode line (10); On p type conductive layer (5), carry out photoetching or etching, obtain cavity type conductive through hole (11), isolated protective layer (8) is set outside p type conductive layer through hole (11); On the p type conductive layer (5) of semiconductor matrix unit (17) p electrode (7) is set, each p electrode (7) links to each other and constitutes anode line (9).
2. the little array of display of a kind of direct light emitting-type according to claim 1 is characterized in that: matrix unit (17) structure comprises n type conductive layer (3), luminescent layer (4), p type conductive layer (5).
3. the little array of display of a kind of direct light emitting-type according to claim 1; It is characterized in that: said semiconductor matrix isolated area (2) is vertically between n type conductive layer (3) and substrate (18), laterally between n electrode (6) and semiconductor matrix unit (17).
4. according to the little array of display of the described a kind of direct light emitting-type of the arbitrary claim of claim 1-4; It is characterized in that: said n electrode (6) is positioned between semiconductor matrix unit (17) and the matrix isolated area (2), and p electrode (7) is positioned at semiconductor matrix unit (17).
5. the little array of display of a kind of direct light emitting-type according to claim 1 is characterized in that: the zone that spatially intersects of said anode line (9) and cathode line (10) is a display pixel.
6. according to based on the little array of display of the described a kind of direct light emitting-type of claim 1, it is characterized in that: the resistance of said semiconductor matrix isolated area (2) is minimum to reach 10
11Ω.
7. preparation method based on the little array of display of the described a kind of direct light emitting-type of claim 1, the material that it is characterized in that said isolated protective layer (8) is insulation conductive layers such as SiO2 or SiNx or polyimides.
8. preparation method based on the little array of display of the described a kind of direct light emitting-type of claim 1, solder joint is characterized in that being crisscross arranged at said anode line (9) and cathode line (10) two ends.
9. the preparation method of the little array of display of a kind of direct light emitting-type according to claim 1 is characterized in that: it comprises and comprises the steps: to clean epitaxial wafer (1); Dry etching part epitaxial wafer (1) to n type conductive layer (3), forms a plurality of semiconductor matrix units (17); The n type conductive layer (3) that exposes in etching injects ion, until substrate (18), forms high resistant, obtains semiconductor matrix isolated area (2); Go up depositing metal at n type conductive layer (3), form n electrode (6), each n electrode (6) links to each other and constitutes cathode line (10); On whole epitaxial wafer with PECVD deposit isolated protective layer (8); Go up with photoetching or dry etching method at p type conductive layer (5), obtain p type conductive layer through hole (11), the area of cavity type conductive through hole (11) is no more than the area of p type conductive layer (5); Go up depositing metal at the p type conductive layer (5) that obtains, form p electrode (7), each p electrode (7) links to each other and constitutes anode line (9).
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106206872A (en) * | 2016-08-04 | 2016-12-07 | 南京大学 | GaN base visible ray micron post array LED device that Si CMOS array drive circuit controls and preparation method thereof |
| CN108281352A (en) * | 2018-01-26 | 2018-07-13 | 成都海威华芯科技有限公司 | A kind of device isolation method applied to gallium nitride transistor |
| CN109478548A (en) * | 2016-07-18 | 2019-03-15 | 奥斯兰姆奥普托半导体有限责任公司 | Module and its manufacturing method for video wall |
| CN112185989A (en) * | 2019-07-03 | 2021-01-05 | 孙润光 | Structure and manufacturing method of inorganic light-emitting diode display device |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109478548A (en) * | 2016-07-18 | 2019-03-15 | 奥斯兰姆奥普托半导体有限责任公司 | Module and its manufacturing method for video wall |
| CN106206872A (en) * | 2016-08-04 | 2016-12-07 | 南京大学 | GaN base visible ray micron post array LED device that Si CMOS array drive circuit controls and preparation method thereof |
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| CN112185989A (en) * | 2019-07-03 | 2021-01-05 | 孙润光 | Structure and manufacturing method of inorganic light-emitting diode display device |
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